DE1025587T1 - Halbleiter-flipchippackung und herstellungsverfahren dafür - Google Patents
Halbleiter-flipchippackung und herstellungsverfahren dafürInfo
- Publication number
- DE1025587T1 DE1025587T1 DE1025587T DE98935858T DE1025587T1 DE 1025587 T1 DE1025587 T1 DE 1025587T1 DE 1025587 T DE1025587 T DE 1025587T DE 98935858 T DE98935858 T DE 98935858T DE 1025587 T1 DE1025587 T1 DE 1025587T1
- Authority
- DE
- Germany
- Prior art keywords
- flipchip
- pack
- semiconductor
- production method
- method therefor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
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- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L2924/1025—Semiconducting materials
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
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- H01L2924/12042—LASER
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- H01L2924/156—Material
- H01L2924/1579—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2924/30—Technical effects
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- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US5340797P | 1997-07-21 | 1997-07-21 | |
US5604397P | 1997-09-02 | 1997-09-02 | |
PCT/US1998/015034 WO1999004430A1 (en) | 1997-07-21 | 1998-07-21 | Semiconductor flip-chip package and method for the fabrication thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1025587T1 true DE1025587T1 (de) | 2001-02-08 |
Family
ID=26731833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1025587T Pending DE1025587T1 (de) | 1997-07-21 | 1998-07-21 | Halbleiter-flipchippackung und herstellungsverfahren dafür |
Country Status (6)
Country | Link |
---|---|
US (7) | US6121689A (de) |
EP (1) | EP1025587A4 (de) |
JP (1) | JP2001510944A (de) |
AU (1) | AU8502798A (de) |
DE (1) | DE1025587T1 (de) |
WO (1) | WO1999004430A1 (de) |
Families Citing this family (374)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6097098A (en) | 1997-02-14 | 2000-08-01 | Micron Technology, Inc. | Die interconnections using intermediate connection elements secured to the die face |
US6074895A (en) * | 1997-09-23 | 2000-06-13 | International Business Machines Corporation | Method of forming a flip chip assembly |
US6495083B2 (en) | 1997-10-29 | 2002-12-17 | Hestia Technologies, Inc. | Method of underfilling an integrated circuit chip |
US6324069B1 (en) | 1997-10-29 | 2001-11-27 | Hestia Technologies, Inc. | Chip package with molded underfill |
JP3625646B2 (ja) | 1998-03-23 | 2005-03-02 | 東レエンジニアリング株式会社 | フリップチップ実装方法 |
US6228678B1 (en) | 1998-04-27 | 2001-05-08 | Fry's Metals, Inc. | Flip chip with integrated mask and underfill |
US6265776B1 (en) | 1998-04-27 | 2001-07-24 | Fry's Metals, Inc. | Flip chip with integrated flux and underfill |
US6323062B1 (en) | 1998-04-27 | 2001-11-27 | Alpha Metals, Inc. | Wafer coating method for flip chips |
EP1099247B1 (de) * | 1998-07-15 | 2004-03-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Methode um lötzinn auf eine anordnung zu übertragen und/oder die anordnung zu testen |
DE19839760A1 (de) * | 1998-09-01 | 2000-03-02 | Bosch Gmbh Robert | Verfahren zur Verbindung von elektronischen Bauelementen mit einem Trägersubstrat sowie Verfahren zur Überprüfung einer derartigen Verbindung |
US6189208B1 (en) | 1998-09-11 | 2001-02-20 | Polymer Flip Chip Corp. | Flip chip mounting technique |
US6329832B1 (en) | 1998-10-05 | 2001-12-11 | Micron Technology, Inc. | Method for in-line testing of flip-chip semiconductor assemblies |
US6331450B1 (en) | 1998-12-22 | 2001-12-18 | Toyoda Gosei Co., Ltd. | Method of manufacturing semiconductor device using group III nitride compound |
JP4036555B2 (ja) * | 1999-01-14 | 2008-01-23 | 松下電器産業株式会社 | 実装構造体の製造方法および実装構造体 |
US6190940B1 (en) * | 1999-01-21 | 2001-02-20 | Lucent Technologies Inc. | Flip chip assembly of semiconductor IC chips |
US6926796B1 (en) * | 1999-01-29 | 2005-08-09 | Matsushita Electric Industrial Co., Ltd. | Electronic parts mounting method and device therefor |
JP3346320B2 (ja) * | 1999-02-03 | 2002-11-18 | カシオ計算機株式会社 | 半導体装置及びその製造方法 |
US6228681B1 (en) * | 1999-03-10 | 2001-05-08 | Fry's Metals, Inc. | Flip chip having integral mask and underfill providing two-stage bump formation |
US6194788B1 (en) | 1999-03-10 | 2001-02-27 | Alpha Metals, Inc. | Flip chip with integrated flux and underfill |
US6248614B1 (en) * | 1999-03-19 | 2001-06-19 | International Business Machines Corporation | Flip-chip package with optimized encapsulant adhesion and method |
US6410415B1 (en) | 1999-03-23 | 2002-06-25 | Polymer Flip Chip Corporation | Flip chip mounting technique |
JP3423245B2 (ja) * | 1999-04-09 | 2003-07-07 | 沖電気工業株式会社 | 半導体装置及びその実装方法 |
US6341418B1 (en) | 1999-04-29 | 2002-01-29 | International Business Machines Corporation | Method for direct chip attach by solder bumps and an underfill layer |
US6333209B1 (en) * | 1999-04-29 | 2001-12-25 | International Business Machines Corporation | One step method for curing and joining BGA solder balls |
FR2792861B1 (fr) * | 1999-04-30 | 2001-07-06 | Eric Pilat | Procede de realisation de plots de soudure sur un substrat et guide pour la mise en oeuvre du procede |
US6245595B1 (en) * | 1999-07-22 | 2001-06-12 | National Semiconductor Corporation | Techniques for wafer level molding of underfill encapsulant |
US6352881B1 (en) * | 1999-07-22 | 2002-03-05 | National Semiconductor Corporation | Method and apparatus for forming an underfill adhesive layer |
US6756253B1 (en) * | 1999-08-27 | 2004-06-29 | Micron Technology, Inc. | Method for fabricating a semiconductor component with external contact polymer support layer |
US6492738B2 (en) * | 1999-09-02 | 2002-12-10 | Micron Technology, Inc. | Apparatus and methods of testing and assembling bumped devices using an anisotropically conductive layer |
JP3334693B2 (ja) * | 1999-10-08 | 2002-10-15 | 日本電気株式会社 | 半導体装置の製造方法 |
AU1219001A (en) * | 1999-10-19 | 2001-04-30 | Motorola, Inc. | Method of forming a microelectronic assembly |
US6475828B1 (en) * | 1999-11-10 | 2002-11-05 | Lsi Logic Corporation | Method of using both a non-filled flux underfill and a filled flux underfill to manufacture a flip-chip |
US6373142B1 (en) * | 1999-11-15 | 2002-04-16 | Lsi Logic Corporation | Method of adding filler into a non-filled underfill system by using a highly filled fillet |
US6613605B2 (en) * | 1999-12-15 | 2003-09-02 | Benedict G Pace | Interconnection method entailing protuberances formed by melting metal over contact areas |
US6962437B1 (en) * | 1999-12-16 | 2005-11-08 | Lsi Logic Corporation | Method and apparatus for thermal profiling of flip-chip packages |
US6796481B2 (en) * | 2000-01-14 | 2004-09-28 | Toray Engineering Co., Ltd. | Chip mounting method |
US6710454B1 (en) | 2000-02-16 | 2004-03-23 | Micron Technology, Inc. | Adhesive layer for an electronic apparatus having multiple semiconductor devices |
JP3625268B2 (ja) * | 2000-02-23 | 2005-03-02 | 富士通株式会社 | 半導体装置の実装方法 |
JP4958363B2 (ja) | 2000-03-10 | 2012-06-20 | スタッツ・チップパック・インコーポレイテッド | パッケージング構造及び方法 |
US10388626B2 (en) * | 2000-03-10 | 2019-08-20 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming flipchip interconnect structure |
EP1278612B1 (de) | 2000-03-10 | 2010-02-24 | Chippac, Inc. | Flipchip-Verbindungsstruktur und dessen Herstellungsverfahren |
JP3967133B2 (ja) * | 2000-03-21 | 2007-08-29 | 三菱電機株式会社 | 半導体装置及び電子機器の製造方法 |
US7547579B1 (en) * | 2000-04-06 | 2009-06-16 | Micron Technology, Inc. | Underfill process |
JP3597754B2 (ja) | 2000-04-24 | 2004-12-08 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US6281046B1 (en) * | 2000-04-25 | 2001-08-28 | Atmel Corporation | Method of forming an integrated circuit package at a wafer level |
JP3265301B2 (ja) * | 2000-06-05 | 2002-03-11 | 株式会社東芝 | 半導体装置とその製造方法 |
US6569753B1 (en) * | 2000-06-08 | 2003-05-27 | Micron Technology, Inc. | Collar positionable about a periphery of a contact pad and around a conductive structure secured to the contact pads, semiconductor device components including same, and methods for fabricating same |
US6680436B2 (en) | 2000-07-12 | 2004-01-20 | Seagate Technology Llc | Reflow encapsulant |
DE10046296C2 (de) * | 2000-07-17 | 2002-10-10 | Infineon Technologies Ag | Elektronisches Chipbauteil mit einer integrierten Schaltung und Verfahren zu seiner Herstellung |
JP2002289768A (ja) * | 2000-07-17 | 2002-10-04 | Rohm Co Ltd | 半導体装置およびその製法 |
JP4609617B2 (ja) * | 2000-08-01 | 2011-01-12 | 日本電気株式会社 | 半導体装置の実装方法及び実装構造体 |
WO2002017392A2 (en) * | 2000-08-24 | 2002-02-28 | Polymer Flip Chip Corporation | Polymer redistribution of flip chip bond pads |
GB0021596D0 (en) * | 2000-09-02 | 2000-10-18 | Vlsi Vision Ltd | Mounting electronic components |
US6578755B1 (en) * | 2000-09-22 | 2003-06-17 | Flip Chip Technologies, L.L.C. | Polymer collar for solder bumps |
TW469609B (en) * | 2000-10-11 | 2001-12-21 | Ultratera Corp | Chipless package semiconductor device and its manufacturing method |
WO2002058108A2 (en) * | 2000-11-14 | 2002-07-25 | Henkel Loctite Corporation | Wafer applied fluxing and underfill material, and layered electronic assemblies manufactured therewith |
US6713880B2 (en) | 2001-02-07 | 2004-03-30 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for producing the same, and method for mounting semiconductor device |
US6924171B2 (en) * | 2001-02-13 | 2005-08-02 | International Business Machines Corporation | Bilayer wafer-level underfill |
US6780682B2 (en) * | 2001-02-27 | 2004-08-24 | Chippac, Inc. | Process for precise encapsulation of flip chip interconnects |
US6648213B1 (en) * | 2001-03-05 | 2003-11-18 | Saturn Electronics & Engineering, Inc. | Manufacturing method for attaching components to a substrate |
US6495397B2 (en) | 2001-03-28 | 2002-12-17 | Intel Corporation | Fluxless flip chip interconnection |
US6713318B2 (en) * | 2001-03-28 | 2004-03-30 | Intel Corporation | Flip chip interconnection using no-clean flux |
JP5280597B2 (ja) * | 2001-03-30 | 2013-09-04 | サンスター技研株式会社 | 一液加熱硬化型エポキシ樹脂組成物および半導体実装用アンダーフィル材 |
KR100384834B1 (ko) * | 2001-03-30 | 2003-05-23 | 주식회사 하이닉스반도체 | 다중 기판 상에 형성되는 반도체 장치 및 그 제조 방법 |
US6586825B1 (en) * | 2001-04-26 | 2003-07-01 | Lsi Logic Corporation | Dual chip in package with a wire bonded die mounted to a substrate |
US6686664B2 (en) * | 2001-04-30 | 2004-02-03 | International Business Machines Corporation | Structure to accommodate increase in volume expansion during solder reflow |
DE10120928C1 (de) * | 2001-04-30 | 2002-10-31 | Infineon Technologies Ag | Verfahren zum Erstellen einer Kontaktverbindung zwischen einem Halbleiterchip und einem Substrat, insbesondere zwischen einem Speichermodulchip und einem Speichermodulboard |
US7115986B2 (en) * | 2001-05-02 | 2006-10-03 | Micron Technology, Inc. | Flexible ball grid array chip scale packages |
US6674172B2 (en) * | 2001-05-08 | 2004-01-06 | International Business Machines Corporation | Flip-chip package with underfill having low density filler |
US7007835B2 (en) * | 2001-05-21 | 2006-03-07 | Jds Uniphase Corporation | Solder bonding technique for assembling a tilted chip or substrate |
US6603916B1 (en) | 2001-07-26 | 2003-08-05 | Lightwave Microsystems Corporation | Lightwave circuit assembly having low deformation balanced sandwich substrate |
SG122743A1 (en) | 2001-08-21 | 2006-06-29 | Micron Technology Inc | Microelectronic devices and methods of manufacture |
US6551863B2 (en) * | 2001-08-30 | 2003-04-22 | Micron Technology, Inc. | Flip chip dip coating encapsulant |
US20030111519A1 (en) * | 2001-09-04 | 2003-06-19 | 3M Innovative Properties Company | Fluxing compositions |
US6491205B1 (en) * | 2001-09-21 | 2002-12-10 | International Business Machines Corporation | Assembly of multi-chip modules using eutectic solders |
US6974765B2 (en) * | 2001-09-27 | 2005-12-13 | Intel Corporation | Encapsulation of pin solder for maintaining accuracy in pin position |
JP3723483B2 (ja) * | 2001-10-16 | 2005-12-07 | 日本電気株式会社 | 電子部品装置 |
US7323360B2 (en) | 2001-10-26 | 2008-01-29 | Intel Corporation | Electronic assemblies with filled no-flow underfill |
US6610559B2 (en) | 2001-11-16 | 2003-08-26 | Indium Corporation Of America | Integrated void-free process for assembling a solder bumped chip |
US6677179B2 (en) * | 2001-11-16 | 2004-01-13 | Indium Corporation Of America | Method of applying no-flow underfill |
US6815831B2 (en) * | 2001-12-12 | 2004-11-09 | Intel Corporation | Flip-chip device with multi-layered underfill having graded coefficient of thermal expansion |
US6833629B2 (en) * | 2001-12-14 | 2004-12-21 | National Starch And Chemical Investment Holding Corporation | Dual cure B-stageable underfill for wafer level |
US6884663B2 (en) * | 2002-01-07 | 2005-04-26 | Delphon Industries, Llc | Method for reconstructing an integrated circuit package using lapping |
SG104293A1 (en) * | 2002-01-09 | 2004-06-21 | Micron Technology Inc | Elimination of rdl using tape base flip chip on flex for die stacking |
DE10209915A1 (de) * | 2002-01-11 | 2003-07-24 | Hesse & Knipps Gmbh | Verfahren zum Flip-Chip-Bonden |
US20030132513A1 (en) * | 2002-01-11 | 2003-07-17 | Motorola, Inc. | Semiconductor package device and method |
EP1328015A3 (de) | 2002-01-11 | 2003-12-03 | Hesse & Knipps GmbH | Verfahren zum Flip-Chip-Bonden |
US6802446B2 (en) * | 2002-02-01 | 2004-10-12 | Delphi Technologies, Inc. | Conductive adhesive material with metallurgically-bonded conductive particles |
US6854633B1 (en) * | 2002-02-05 | 2005-02-15 | Micron Technology, Inc. | System with polymer masking flux for fabricating external contacts on semiconductor components |
US7037399B2 (en) | 2002-03-01 | 2006-05-02 | National Starch And Chemical Investment Holding Corporation | Underfill encapsulant for wafer packaging and method for its application |
US20060194064A1 (en) * | 2002-03-01 | 2006-08-31 | Xiao Allison Y | Underfill encapsulant for wafer packaging and method for its application |
US20030164555A1 (en) * | 2002-03-01 | 2003-09-04 | Tong Quinn K. | B-stageable underfill encapsulant and method for its application |
SG121707A1 (en) * | 2002-03-04 | 2006-05-26 | Micron Technology Inc | Method and apparatus for flip-chip packaging providing testing capability |
SG115456A1 (en) * | 2002-03-04 | 2005-10-28 | Micron Technology Inc | Semiconductor die packages with recessed interconnecting structures and methods for assembling the same |
SG115455A1 (en) * | 2002-03-04 | 2005-10-28 | Micron Technology Inc | Methods for assembly and packaging of flip chip configured dice with interposer |
SG111935A1 (en) | 2002-03-04 | 2005-06-29 | Micron Technology Inc | Interposer configured to reduce the profiles of semiconductor device assemblies and packages including the same and methods |
US6975035B2 (en) * | 2002-03-04 | 2005-12-13 | Micron Technology, Inc. | Method and apparatus for dielectric filling of flip chip on interposer assembly |
SG115459A1 (en) * | 2002-03-04 | 2005-10-28 | Micron Technology Inc | Flip chip packaging using recessed interposer terminals |
US6906425B2 (en) * | 2002-03-05 | 2005-06-14 | Resolution Performance Products Llc | Attachment of surface mount devices to printed circuit boards using a thermoplastic adhesive |
US20030170450A1 (en) * | 2002-03-05 | 2003-09-11 | Stewart Steven L. | Attachment of surface mount devices to printed circuit boards using a thermoplastic adhesive |
JP4052868B2 (ja) * | 2002-04-26 | 2008-02-27 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6940176B2 (en) * | 2002-05-21 | 2005-09-06 | United Microelectronics Corp. | Solder pads for improving reliability of a package |
KR100481216B1 (ko) * | 2002-06-07 | 2005-04-08 | 엘지전자 주식회사 | 볼 그리드 어레이 패키지 및 그의 제조 방법 |
US7262074B2 (en) * | 2002-07-08 | 2007-08-28 | Micron Technology, Inc. | Methods of fabricating underfilled, encapsulated semiconductor die assemblies |
US6747331B2 (en) * | 2002-07-17 | 2004-06-08 | International Business Machines Corporation | Method and packaging structure for optimizing warpage of flip chip organic packages |
US6649833B1 (en) * | 2002-08-09 | 2003-11-18 | International Business Machines Corporation | Negative volume expansion lead-free electrical connection |
US7182241B2 (en) * | 2002-08-09 | 2007-02-27 | Micron Technology, Inc. | Multi-functional solder and articles made therewith, such as microelectronic components |
US7423337B1 (en) | 2002-08-19 | 2008-09-09 | National Semiconductor Corporation | Integrated circuit device package having a support coating for improved reliability during temperature cycling |
US20040036170A1 (en) * | 2002-08-20 | 2004-02-26 | Lee Teck Kheng | Double bumping of flexible substrate for first and second level interconnects |
US6845901B2 (en) * | 2002-08-22 | 2005-01-25 | Micron Technology, Inc. | Apparatus and method for depositing and reflowing solder paste on a microelectronic workpiece |
US6969914B2 (en) * | 2002-08-29 | 2005-11-29 | Micron Technology, Inc. | Electronic device package |
US6798806B1 (en) * | 2002-09-03 | 2004-09-28 | Finisar Corporation | Hybrid mirror VCSELs |
US6649445B1 (en) * | 2002-09-11 | 2003-11-18 | Motorola, Inc. | Wafer coating and singulation method |
KR100484889B1 (ko) * | 2002-09-19 | 2005-04-28 | 재단법인서울대학교산학협력재단 | 반도체 패키지 제조공정의 솔더필 및 그 제조방법 |
US7045884B2 (en) * | 2002-10-04 | 2006-05-16 | International Rectifier Corporation | Semiconductor device package |
US6949398B2 (en) * | 2002-10-31 | 2005-09-27 | Freescale Semiconductor, Inc. | Low cost fabrication and assembly of lid for semiconductor devices |
US20060147719A1 (en) * | 2002-11-22 | 2006-07-06 | Slawomir Rubinsztajn | Curable composition, underfill, and method |
US7022410B2 (en) * | 2003-12-16 | 2006-04-04 | General Electric Company | Combinations of resin compositions and methods of use thereof |
US7223981B1 (en) | 2002-12-04 | 2007-05-29 | Aguila Technologies Inc. | Gamma ray detector modules |
TW582077B (en) * | 2002-12-18 | 2004-04-01 | Advanced Semiconductor Eng | Flip-chip substrate and the flip-chip bonding process thereof |
US20040119151A1 (en) * | 2002-12-20 | 2004-06-24 | Intel Corporation | Pre-applied underfill |
US20040239006A1 (en) * | 2003-01-22 | 2004-12-02 | Microfabrica Inc. | Silicone compositions, methods of making, and uses thereof |
US6720246B1 (en) * | 2003-01-23 | 2004-04-13 | Silicon Integrated Systems Corp. | Flip chip assembly process for forming an underfill encapsulant |
US20040155358A1 (en) * | 2003-02-07 | 2004-08-12 | Toshitsune Iijima | First and second level packaging assemblies and method of assembling package |
US7301222B1 (en) | 2003-02-12 | 2007-11-27 | National Semiconductor Corporation | Apparatus for forming a pre-applied underfill adhesive layer for semiconductor wafer level chip-scale packages |
US6821878B2 (en) * | 2003-02-27 | 2004-11-23 | Freescale Semiconductor, Inc. | Area-array device assembly with pre-applied underfill layers on printed wiring board |
JP2004281491A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体装置及びその製造方法 |
US6987058B2 (en) * | 2003-03-18 | 2006-01-17 | Micron Technology, Inc. | Methods for underfilling and encapsulating semiconductor device assemblies with a single dielectric material |
US6943058B2 (en) * | 2003-03-18 | 2005-09-13 | Delphi Technologies, Inc. | No-flow underfill process and material therefor |
JP4096774B2 (ja) * | 2003-03-24 | 2008-06-04 | セイコーエプソン株式会社 | 半導体装置、電子デバイス、電子機器、半導体装置の製造方法及び電子デバイスの製造方法 |
JP4123998B2 (ja) * | 2003-03-24 | 2008-07-23 | 松下電器産業株式会社 | 電子回路装置およびその製造方法 |
US20050014313A1 (en) * | 2003-03-26 | 2005-01-20 | Workman Derek B. | Underfill method |
US6774497B1 (en) | 2003-03-28 | 2004-08-10 | Freescale Semiconductor, Inc. | Flip-chip assembly with thin underfill and thick solder mask |
JP4389471B2 (ja) * | 2003-05-19 | 2009-12-24 | パナソニック株式会社 | 電子回路の接続構造とその接続方法 |
US6825560B1 (en) * | 2003-05-22 | 2004-11-30 | Rf Micro Devices, Inc. | Solder filler |
US20040232530A1 (en) * | 2003-05-23 | 2004-11-25 | Paul Morganelli | Pre-applied thermoplastic reinforcement for electronic components |
US20040245611A1 (en) * | 2003-05-23 | 2004-12-09 | Paul Morganelli | Pre-applied thermoplastic reinforcement for electronic components |
US20040235996A1 (en) * | 2003-05-23 | 2004-11-25 | Jayesh Shah | Foamable underfill encapsulant |
US6978540B2 (en) * | 2003-05-23 | 2005-12-27 | National Starch And Chemical Investment Holding Corporation | Method for pre-applied thermoplastic reinforcement of electronic components |
US7047633B2 (en) * | 2003-05-23 | 2006-05-23 | National Starch And Chemical Investment Holding, Corporation | Method of using pre-applied underfill encapsulant |
US7004375B2 (en) * | 2003-05-23 | 2006-02-28 | National Starch And Chemical Investment Holding Corporation | Pre-applied fluxing underfill composition having pressure sensitive adhesive properties |
US20060142424A1 (en) * | 2003-05-23 | 2006-06-29 | Jayesh Shah | Foamable underfill encapsulant |
US20040238925A1 (en) * | 2003-05-23 | 2004-12-02 | Paul Morganelli | Pre-applied thermoplastic reinforcement for electronic components |
US6946384B2 (en) * | 2003-06-06 | 2005-09-20 | Intel Corporation | Stacked device underfill and a method of fabrication |
US7166491B2 (en) * | 2003-06-11 | 2007-01-23 | Fry's Metals, Inc. | Thermoplastic fluxing underfill composition and method |
US7320928B2 (en) * | 2003-06-20 | 2008-01-22 | Intel Corporation | Method of forming a stacked device filler |
JP4263953B2 (ja) * | 2003-06-23 | 2009-05-13 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
TWI245597B (en) * | 2003-06-30 | 2005-12-11 | Siliconware Precision Industries Co Ltd | Printed circuit boards and method for fabricating the same |
US7026376B2 (en) * | 2003-06-30 | 2006-04-11 | Intel Corporation | Fluxing agent for underfill materials |
US20050028361A1 (en) * | 2003-08-07 | 2005-02-10 | Indium Corporation Of America | Integrated underfill process for bumped chip assembly |
US20050082670A1 (en) * | 2003-09-11 | 2005-04-21 | Nordson Corporation | Method for preapplying a viscous material to strengthen solder connections in microelectronic packaging and microelectronic packages formed thereby |
US20050056946A1 (en) * | 2003-09-16 | 2005-03-17 | Cookson Electronics, Inc. | Electrical circuit assembly with improved shock resistance |
US20050196907A1 (en) * | 2003-09-19 | 2005-09-08 | Glenn Ratificar | Underfill system for die-over-die arrangements |
US7239016B2 (en) * | 2003-10-09 | 2007-07-03 | Denso Corporation | Semiconductor device having heat radiation plate and bonding member |
KR100659527B1 (ko) * | 2003-10-22 | 2006-12-20 | 삼성전자주식회사 | 3차원 범프 하부 금속층을 갖는 플립 칩 본딩용 반도체칩과 그 실장 구조 |
TWI358776B (en) * | 2003-11-08 | 2012-02-21 | Chippac Inc | Flip chip interconnection pad layout |
US8853001B2 (en) * | 2003-11-08 | 2014-10-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming pad layout for flipchip semiconductor die |
US7659633B2 (en) | 2004-11-10 | 2010-02-09 | Stats Chippac, Ltd. | Solder joint flip chip interconnection having relief structure |
US8216930B2 (en) | 2006-12-14 | 2012-07-10 | Stats Chippac, Ltd. | Solder joint flip chip interconnection having relief structure |
US20070105277A1 (en) | 2004-11-10 | 2007-05-10 | Stats Chippac Ltd. | Solder joint flip chip interconnection |
US8350384B2 (en) * | 2009-11-24 | 2013-01-08 | Stats Chippac, Ltd. | Semiconductor device and method of forming electrical interconnect with stress relief void |
US8129841B2 (en) | 2006-12-14 | 2012-03-06 | Stats Chippac, Ltd. | Solder joint flip chip interconnection |
US9029196B2 (en) | 2003-11-10 | 2015-05-12 | Stats Chippac, Ltd. | Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask |
US8574959B2 (en) | 2003-11-10 | 2013-11-05 | Stats Chippac, Ltd. | Semiconductor device and method of forming bump-on-lead interconnection |
USRE47600E1 (en) | 2003-11-10 | 2019-09-10 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming electrical interconnect with stress relief void |
TWI478254B (zh) | 2003-11-10 | 2015-03-21 | Chippac Inc | 引線上凸塊之倒裝晶片互連 |
US8076232B2 (en) * | 2008-04-03 | 2011-12-13 | Stats Chippac, Ltd. | Semiconductor device and method of forming composite bump-on-lead interconnection |
US8026128B2 (en) | 2004-11-10 | 2011-09-27 | Stats Chippac, Ltd. | Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask |
USRE44500E1 (en) | 2003-11-10 | 2013-09-17 | Stats Chippac, Ltd. | Semiconductor device and method of forming composite bump-on-lead interconnection |
US20050121496A1 (en) * | 2003-12-05 | 2005-06-09 | Farrell Kevin C. | Apparatus for immobilizing a solid solder element to a contact surface of interest |
US7045904B2 (en) * | 2003-12-10 | 2006-05-16 | Texas Instruments Incorporated | Patterned plasma treatment to improve distribution of underfill material |
KR100568006B1 (ko) * | 2003-12-12 | 2006-04-07 | 삼성전자주식회사 | 플립 칩 패키지의 오목형 솔더 범프 구조 형성 방법 |
US7012519B2 (en) * | 2004-02-27 | 2006-03-14 | Red Fox & Company, Llc | Emergency shutoff system for power machinery, wireless monitoring systems, and emergency shutoff methods |
US7244634B2 (en) * | 2004-03-31 | 2007-07-17 | Intel Corporation | Stress-relief layer and stress-compensation collar in contact arrays, and processes of making same |
US7213739B2 (en) * | 2004-04-02 | 2007-05-08 | Fry's Metals, Inc. | Underfill fluxing curative |
TWI240399B (en) * | 2004-04-06 | 2005-09-21 | Advanced Semiconductor Eng | Chip package structure and process for fabricating the same |
US7282375B1 (en) | 2004-04-14 | 2007-10-16 | National Semiconductor Corporation | Wafer level package design that facilitates trimming and testing |
DE102004021633B4 (de) * | 2004-05-03 | 2006-04-06 | Infineon Technologies Ag | Verfahren zum Verbinden eines Halbleiterchips mit einem Chipträger und Anordnung mit einem Halbleiterchip und einem Chipträger |
US7253089B2 (en) * | 2004-06-14 | 2007-08-07 | Micron Technology, Inc. | Microfeature devices and methods for manufacturing microfeature devices |
US7205177B2 (en) * | 2004-07-01 | 2007-04-17 | Interuniversitair Microelektronica Centrum (Imec) | Methods of bonding two semiconductor devices |
US7378297B2 (en) | 2004-07-01 | 2008-05-27 | Interuniversitair Microelektronica Centrum (Imec) | Methods of bonding two semiconductor devices |
JP4511266B2 (ja) * | 2004-07-05 | 2010-07-28 | パナソニック株式会社 | 半導体装置およびその製造方法 |
TWI237370B (en) * | 2004-07-30 | 2005-08-01 | Advanced Semiconductor Eng | Chip package structure and process for fabricating the same |
US7247683B2 (en) | 2004-08-05 | 2007-07-24 | Fry's Metals, Inc. | Low voiding no flow fluxing underfill for electronic devices |
US7875686B2 (en) * | 2004-08-18 | 2011-01-25 | Promerus Llc | Polycycloolefin polymeric compositions for semiconductor applications |
US7332821B2 (en) * | 2004-08-20 | 2008-02-19 | International Business Machines Corporation | Compressible films surrounding solder connectors |
US20060043603A1 (en) * | 2004-08-31 | 2006-03-02 | Lsi Logic Corporation | Low temperature PB-free processing for semiconductor devices |
US7033864B2 (en) * | 2004-09-03 | 2006-04-25 | Texas Instruments Incorporated | Grooved substrates for uniform underfilling solder ball assembled electronic devices |
US7218007B2 (en) * | 2004-09-28 | 2007-05-15 | Intel Corporation | Underfill material to reduce ball limiting metallurgy delamination and cracking potential in semiconductor devices |
US7253088B2 (en) * | 2004-09-29 | 2007-08-07 | Intel Corporation | Stress-relief layers and stress-compensation collars with low-temperature solders for board-level joints, and processes of making same |
DE102004050178B3 (de) * | 2004-10-14 | 2006-05-04 | Infineon Technologies Ag | Flip-Chip-Bauelement |
TWI236048B (en) * | 2004-10-21 | 2005-07-11 | Advanced Semiconductor Eng | Method for flip chip bonding by utilizing an interposer with embeded bumps |
JP2006128567A (ja) * | 2004-11-01 | 2006-05-18 | Three M Innovative Properties Co | 半導体パッケージのプリント配線板への接続方法 |
KR100601762B1 (ko) * | 2004-11-09 | 2006-07-19 | 삼성전자주식회사 | 비전도성 접착제를 사용하는 플립 칩 본딩 제조 방법 |
US7629674B1 (en) * | 2004-11-17 | 2009-12-08 | Amkor Technology, Inc. | Shielded package having shield fence |
US7442579B2 (en) * | 2004-11-22 | 2008-10-28 | International Business Machines Corporation | Methods to achieve precision alignment for wafer scale packages |
DE102004056534A1 (de) * | 2004-11-23 | 2006-06-01 | Infineon Technologies Ag | Halbleiterbauteil mit einem Halbleiterchip und mit Außenkontakten sowie Verfahren zur Herstellung desselben |
DE102004062212A1 (de) * | 2004-12-23 | 2006-07-13 | Texas Instruments Deutschland Gmbh | Elektronische Vorrichtung, Chipkontaktierungsverfahren und Kontaktierungsvorrichtung |
US20060177966A1 (en) * | 2005-02-09 | 2006-08-10 | Jayesh Shah | Package or pre-applied foamable underfill for lead-free process |
US7413110B2 (en) * | 2005-02-16 | 2008-08-19 | Motorola, Inc. | Method for reducing stress between substrates of differing materials |
US8841779B2 (en) | 2005-03-25 | 2014-09-23 | Stats Chippac, Ltd. | Semiconductor device and method of forming high routing density BOL BONL and BONP interconnect sites on substrate |
KR20070107154A (ko) * | 2005-03-25 | 2007-11-06 | 스태츠 칩팩, 엘티디. | 기판상에 좁은 상호접속 사이트를 갖는 플립 칩 상호접속체 |
JP4534062B2 (ja) | 2005-04-19 | 2010-09-01 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9258904B2 (en) * | 2005-05-16 | 2016-02-09 | Stats Chippac, Ltd. | Semiconductor device and method of forming narrow interconnect sites on substrate with elongated mask openings |
US20060255473A1 (en) * | 2005-05-16 | 2006-11-16 | Stats Chippac Ltd. | Flip chip interconnect solder mask |
US7319591B2 (en) * | 2005-05-26 | 2008-01-15 | International Business Machines Corporation | Optimized thermally conductive plate and attachment method for enhanced thermal performance and reliability of flip chip organic packages |
US7436114B2 (en) * | 2005-06-03 | 2008-10-14 | E.I. Du Pont De Nemours And Company | Electronic device including a first workpiece, a second workpiece, and a conductive member substantially directly bonded to the first and second workpieces |
EP1732116B1 (de) | 2005-06-08 | 2017-02-01 | Imec | Methode zum Bonden mikroelektronischer Bauteile und damit hergestellte Vorrichtung |
CN101194541A (zh) * | 2005-06-16 | 2008-06-04 | 千住金属工业株式会社 | 模块基板的钎焊方法 |
US20070026575A1 (en) * | 2005-06-24 | 2007-02-01 | Subramanian Sankara J | No flow underfill device and method |
JP4208863B2 (ja) * | 2005-06-30 | 2009-01-14 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR100684169B1 (ko) * | 2005-08-11 | 2007-02-20 | 삼성전자주식회사 | 이원 필러 분포를 가지는 접착 필름 및 그 제조 방법, 이를이용한 칩 적층 패키지 및 그 제조 방법 |
JP4137112B2 (ja) * | 2005-10-20 | 2008-08-20 | 日本テキサス・インスツルメンツ株式会社 | 電子部品の製造方法 |
KR100652440B1 (ko) * | 2005-10-27 | 2006-12-01 | 삼성전자주식회사 | 반도체 패키지, 그 패키지를 이용한 스택 패키지 및 그스택 패키지 형성 방법 |
KR100699874B1 (ko) * | 2005-11-08 | 2007-03-28 | 삼성전자주식회사 | 삽입형 연결부를 갖는 비. 지. 에이 패키지 그 제조방법 및이를 포함하는 보드 구조 |
JP4650220B2 (ja) * | 2005-11-10 | 2011-03-16 | パナソニック株式会社 | 電子部品の半田付け方法および電子部品の半田付け構造 |
US20090242023A1 (en) * | 2005-11-25 | 2009-10-01 | Israel Aircraft Industries Ltd. | System and method for producing a solar cell array |
US7416923B2 (en) * | 2005-12-09 | 2008-08-26 | International Business Machines Corporation | Underfill film having thermally conductive sheet |
DE102006006561B4 (de) * | 2006-02-13 | 2009-03-05 | Htc Beteiligungs Gmbh | Flip-Chip-Modul und Verfahren zum Austauschen eines Halbleiterchips eines Flip-Chip-Moduls |
US7385299B2 (en) * | 2006-02-25 | 2008-06-10 | Stats Chippac Ltd. | Stackable integrated circuit package system with multiple interconnect interface |
US20070200234A1 (en) * | 2006-02-28 | 2007-08-30 | Texas Instruments Incorporated | Flip-Chip Device Having Underfill in Controlled Gap |
US7656042B2 (en) * | 2006-03-29 | 2010-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stratified underfill in an IC package |
US20070226995A1 (en) * | 2006-03-30 | 2007-10-04 | Gregory Alan Bone | System and method for adhering large semiconductor applications to pcb |
US8097958B2 (en) * | 2006-04-27 | 2012-01-17 | Panasonic Corporation | Flip chip connection structure having powder-like conductive substance and method of producing the same |
US20070284758A1 (en) * | 2006-05-22 | 2007-12-13 | General Electric Company | Electronics package and associated method |
US20080003804A1 (en) * | 2006-06-29 | 2008-01-03 | Ravi Nalla | Method of providing solder bumps of mixed sizes on a substrate using solder transfer in two stages |
JP2008042077A (ja) * | 2006-08-09 | 2008-02-21 | Renesas Technology Corp | 半導体装置及びその製造方法 |
KR100780956B1 (ko) * | 2006-08-17 | 2007-12-03 | 삼성전자주식회사 | 이종 언더필 반도체 패키지 및 그의 제조 방법 |
US8159825B1 (en) * | 2006-08-25 | 2012-04-17 | Hypres Inc. | Method for fabrication of electrical contacts to superconducting circuits |
JP2008071812A (ja) * | 2006-09-12 | 2008-03-27 | Fujikura Ltd | 基板間接続構造 |
JP4830744B2 (ja) * | 2006-09-15 | 2011-12-07 | パナソニック株式会社 | 電子部品実装用接着剤及び電子部品実装構造体 |
US7713782B2 (en) * | 2006-09-22 | 2010-05-11 | Stats Chippac, Inc. | Fusible I/O interconnection systems and methods for flip-chip packaging involving substrate-mounted stud-bumps |
US9847309B2 (en) | 2006-09-22 | 2017-12-19 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming vertical interconnect structure between semiconductor die and substrate |
JP5085081B2 (ja) * | 2006-09-22 | 2012-11-28 | パナソニック株式会社 | 電子部品実装構造体 |
TWI414580B (zh) * | 2006-10-31 | 2013-11-11 | Sumitomo Bakelite Co | 黏著帶及使用該黏著帶而成之半導體裝置 |
US7948090B2 (en) * | 2006-12-20 | 2011-05-24 | Intel Corporation | Capillary-flow underfill compositions, packages containing same, and systems containing same |
EP2131450B1 (de) * | 2007-03-12 | 2013-08-07 | Senju Metal Industry Co., Ltd | Anisotropes elektroleitfähiges material |
US20080280392A1 (en) * | 2007-03-13 | 2008-11-13 | Stapleton Russell A | Convex die attachment method |
US20080230901A1 (en) * | 2007-03-20 | 2008-09-25 | International Business Machines Corporation | Structure for controlled collapse chip connection with displaced captured pads |
US7786001B2 (en) * | 2007-04-11 | 2010-08-31 | International Business Machines Corporation | Electrical interconnect structure and method |
JP5530920B2 (ja) * | 2007-04-25 | 2014-06-25 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | 銀及びニッケル、もしくは、銀及びニッケル合金からなる厚膜導電体形成、及びそれから作られる太陽電池 |
US7977155B2 (en) * | 2007-05-04 | 2011-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer-level flip-chip assembly methods |
US20080284045A1 (en) * | 2007-05-18 | 2008-11-20 | Texas Instruments Incorporated | Method for Fabricating Array-Molded Package-On-Package |
US20080308932A1 (en) * | 2007-06-12 | 2008-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package structures |
US7648858B2 (en) * | 2007-06-19 | 2010-01-19 | Freescale Semiconductor, Inc. | Methods and apparatus for EMI shielding in multi-chip modules |
US9953910B2 (en) * | 2007-06-21 | 2018-04-24 | General Electric Company | Demountable interconnect structure |
US9610758B2 (en) * | 2007-06-21 | 2017-04-04 | General Electric Company | Method of making demountable interconnect structure |
US7944034B2 (en) * | 2007-06-22 | 2011-05-17 | Texas Instruments Incorporated | Array molded package-on-package having redistribution lines |
US7772047B2 (en) * | 2007-06-28 | 2010-08-10 | Sandisk Corporation | Method of fabricating a semiconductor die having a redistribution layer |
US7763980B2 (en) * | 2007-06-28 | 2010-07-27 | Sandisk Corporation | Semiconductor die having a distribution layer |
GB0714723D0 (en) | 2007-07-30 | 2007-09-12 | Pilkington Automotive D Gmbh | Improved electrical connector |
US7745264B2 (en) * | 2007-09-04 | 2010-06-29 | Advanced Micro Devices, Inc. | Semiconductor chip with stratified underfill |
US8148255B2 (en) * | 2007-09-18 | 2012-04-03 | International Business Machines Corporation | Techniques for forming solder bump interconnects |
US20090108442A1 (en) * | 2007-10-25 | 2009-04-30 | International Business Machines Corporation | Self-assembled stress relief interface |
JP5353153B2 (ja) * | 2007-11-09 | 2013-11-27 | パナソニック株式会社 | 実装構造体 |
US20090127718A1 (en) * | 2007-11-15 | 2009-05-21 | Chen Singjang | Flip chip wafer, flip chip die and manufacturing processes thereof |
US8487428B2 (en) * | 2007-11-20 | 2013-07-16 | Fujitsu Limited | Method and system for providing a reliable semiconductor assembly |
KR101408743B1 (ko) * | 2007-12-11 | 2014-06-18 | 삼성전자주식회사 | 반도체 패키지 및 반도체 패키지 제조 방법 |
US8349721B2 (en) * | 2008-03-19 | 2013-01-08 | Stats Chippac, Ltd. | Semiconductor device and method of forming insulating layer on conductive traces for electrical isolation in fine pitch bonding |
US7759137B2 (en) * | 2008-03-25 | 2010-07-20 | Stats Chippac, Ltd. | Flip chip interconnection structure with bump on partial pad and method thereof |
US9345148B2 (en) | 2008-03-25 | 2016-05-17 | Stats Chippac, Ltd. | Semiconductor device and method of forming flipchip interconnection structure with bump on partial pad |
US7773220B2 (en) * | 2008-04-02 | 2010-08-10 | International Business Machines Corporation | Method and system for collecting alignment data from coated chips or wafers |
US20090250814A1 (en) * | 2008-04-03 | 2009-10-08 | Stats Chippac, Ltd. | Flip Chip Interconnection Structure Having Void-Free Fine Pitch and Method Thereof |
US20090266480A1 (en) * | 2008-04-29 | 2009-10-29 | International Business Machines Corporation | Process for Preparing a Solder Stand-Off |
US8563357B2 (en) | 2008-06-26 | 2013-10-22 | Infineon Technologies Ag | Method of packaging a die |
US7951648B2 (en) * | 2008-07-01 | 2011-05-31 | International Business Machines Corporation | Chip-level underfill method of manufacture |
JP2010021293A (ja) * | 2008-07-09 | 2010-01-28 | Nec Electronics Corp | 半導体装置および半導体装置の製造方法 |
US8159067B2 (en) * | 2008-08-13 | 2012-04-17 | International Business Machines Corporation | Underfill flow guide structures |
US7897502B2 (en) | 2008-09-10 | 2011-03-01 | Stats Chippac, Ltd. | Method of forming vertically offset bond on trace interconnects on recessed and raised bond fingers |
WO2010047006A1 (ja) * | 2008-10-23 | 2010-04-29 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP5113793B2 (ja) * | 2008-10-23 | 2013-01-09 | パナソニック株式会社 | 半導体装置およびその製造方法 |
WO2010068488A1 (en) * | 2008-11-25 | 2010-06-17 | Lord Corporation | Methods for protecting a die surface with photocurable materials |
JP5712615B2 (ja) * | 2008-11-25 | 2015-05-07 | 住友ベークライト株式会社 | 電子部品パッケージおよび電子部品パッケージの製造方法 |
US9093448B2 (en) | 2008-11-25 | 2015-07-28 | Lord Corporation | Methods for protecting a die surface with photocurable materials |
JP4724222B2 (ja) | 2008-12-12 | 2011-07-13 | 株式会社東芝 | 発光装置の製造方法 |
US8659172B2 (en) | 2008-12-31 | 2014-02-25 | Stats Chippac, Ltd. | Semiconductor device and method of confining conductive bump material with solder mask patch |
US8198186B2 (en) | 2008-12-31 | 2012-06-12 | Stats Chippac, Ltd. | Semiconductor device and method of confining conductive bump material during reflow with solder mask patch |
FR2941563B1 (fr) * | 2009-01-26 | 2011-02-11 | Commissariat Energie Atomique | Barriere etanche pour microcomposant et procede de fabrication d'une telle barriere. |
US20100237500A1 (en) * | 2009-03-20 | 2010-09-23 | Stats Chippac, Ltd. | Semiconductor Substrate and Method of Forming Conformal Solder Wet-Enhancement Layer on Bump-on-Lead Site |
FR2943849B1 (fr) * | 2009-03-31 | 2011-08-26 | St Microelectronics Grenoble 2 | Procede de realisation de boitiers semi-conducteurs et boitier semi-conducteur |
US8080446B2 (en) | 2009-05-27 | 2011-12-20 | Stats Chippac Ltd. | Integrated circuit packaging system with interposer interconnections and method of manufacture thereof |
US8689437B2 (en) * | 2009-06-24 | 2014-04-08 | International Business Machines Corporation | Method for forming integrated circuit assembly |
TWI478257B (zh) * | 2009-08-06 | 2015-03-21 | Htc Corp | 封裝結構及封裝製程 |
JP5532744B2 (ja) * | 2009-08-20 | 2014-06-25 | 富士通株式会社 | マルチチップモジュール及びマルチチップモジュールの製造方法 |
US8507325B2 (en) * | 2010-01-28 | 2013-08-13 | International Business Machines Corporation | Co-axial restraint for connectors within flip-chip packages |
US8574960B2 (en) | 2010-02-03 | 2013-11-05 | Stats Chippac, Ltd. | Semiconductor device and method of forming cavity adjacent to sensitive region of semiconductor die using wafer-level underfill material |
US8039384B2 (en) | 2010-03-09 | 2011-10-18 | Stats Chippac, Ltd. | Semiconductor device and method of forming vertically offset bond on trace interconnects on different height traces |
JP5418367B2 (ja) * | 2010-03-30 | 2014-02-19 | 富士通株式会社 | プリント配線板ユニットおよび電子機器 |
US8409978B2 (en) | 2010-06-24 | 2013-04-02 | Stats Chippac, Ltd. | Semiconductor device and method of forming vertically offset bond on trace interconnect structure on leadframe |
US20110318882A1 (en) * | 2010-06-24 | 2011-12-29 | Xiaoming Wu | Method of restricting chip movement upon bonding to rigid substrate using spray coatable adhesive |
US8642461B2 (en) * | 2010-08-09 | 2014-02-04 | Maxim Integrated Products, Inc. | Side wettable plating for semiconductor chip package |
US8492197B2 (en) | 2010-08-17 | 2013-07-23 | Stats Chippac, Ltd. | Semiconductor device and method of forming vertically offset conductive pillars over first substrate aligned to vertically offset BOT interconnect sites formed over second substrate |
JP2012049175A (ja) * | 2010-08-24 | 2012-03-08 | Toshiba Corp | 半導体装置の製造方法 |
CN102386088B (zh) * | 2010-09-03 | 2014-06-25 | 中芯国际集成电路制造(上海)有限公司 | 用于去除半导体器件结构上的光致抗蚀剂层的方法 |
JP5349432B2 (ja) | 2010-09-06 | 2013-11-20 | 日東電工株式会社 | 電子部品装置の製法およびそれに用いる電子部品封止用樹脂組成物シート |
US8435834B2 (en) | 2010-09-13 | 2013-05-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming bond-on-lead interconnection for mounting semiconductor die in FO-WLCSP |
US20120085575A1 (en) * | 2010-10-08 | 2012-04-12 | Nobuhiro Yamamoto | Electronic Apparatus Manufacturing Method, Electronic Component, and Electronic Apparatus |
TWI430426B (zh) * | 2010-10-19 | 2014-03-11 | Univ Nat Chiao Tung | 使用共用傳導層傳送晶片間多重信號之系統 |
KR20120040536A (ko) * | 2010-10-19 | 2012-04-27 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
US9249265B1 (en) | 2014-09-08 | 2016-02-02 | Sirrus, Inc. | Emulsion polymers including one or more 1,1-disubstituted alkene compounds, emulsion methods, and polymer compositions |
US10414839B2 (en) | 2010-10-20 | 2019-09-17 | Sirrus, Inc. | Polymers including a methylene beta-ketoester and products formed therefrom |
US9828324B2 (en) | 2010-10-20 | 2017-11-28 | Sirrus, Inc. | Methylene beta-diketone monomers, methods for making methylene beta-diketone monomers, polymerizable compositions and products formed therefrom |
US9279022B1 (en) | 2014-09-08 | 2016-03-08 | Sirrus, Inc. | Solution polymers including one or more 1,1-disubstituted alkene compounds, solution polymerization methods, and polymer compositions |
US8299596B2 (en) * | 2010-12-14 | 2012-10-30 | Stats Chippac Ltd. | Integrated circuit packaging system with bump conductors and method of manufacture thereof |
DE102011002539A1 (de) * | 2011-01-11 | 2012-07-12 | Innovent E.V. | Verfahren zum Aufbringen von Lothügeln auf einen Wafer oder rekonfigurierten Wafer |
US8162203B1 (en) * | 2011-02-18 | 2012-04-24 | International Business Machines Corporation | Spherical solder reflow method |
KR101210586B1 (ko) * | 2011-04-20 | 2012-12-11 | 한국생산기술연구원 | 부피팽창제가 포함된 접착제를 사용한 플립 칩 패키지 및 그 접합방법 |
US8642382B2 (en) | 2011-06-20 | 2014-02-04 | Stats Chippac Ltd. | Integrated circuit packaging system with support structure and method of manufacture thereof |
US8963340B2 (en) * | 2011-09-13 | 2015-02-24 | International Business Machines Corporation | No flow underfill or wafer level underfill and solder columns |
US9218989B2 (en) * | 2011-09-23 | 2015-12-22 | Raytheon Company | Aerogel dielectric layer |
US9221739B2 (en) | 2011-10-19 | 2015-12-29 | Sirrus, Inc. | Methylene beta-diketone monomers, methods for making methylene beta-diketone monomers, polymerizable compositions and products formed therefrom |
TWI476841B (zh) * | 2012-03-03 | 2015-03-11 | 矽品精密工業股份有限公司 | 半導體封裝件及其製法 |
WO2013149168A1 (en) | 2012-03-30 | 2013-10-03 | Bioformix, Inc. | Composite and laminate articles and polymerizable systems for producing the same |
EP2831185B1 (de) | 2012-03-30 | 2019-09-25 | Sirrus, Inc. | Tinte und beschichtungsformulierungen sowie polymerisierbare systeme zur herstellung davon |
JP5965185B2 (ja) | 2012-03-30 | 2016-08-03 | デクセリアルズ株式会社 | 回路接続材料、及びこれを用いた半導体装置の製造方法 |
US9064820B2 (en) * | 2012-04-05 | 2015-06-23 | Mekiec Manufacturing Corporation (Thailand) Ltd | Method and encapsulant for flip-chip assembly |
US9202714B2 (en) | 2012-04-24 | 2015-12-01 | Micron Technology, Inc. | Methods for forming semiconductor device packages |
US9362143B2 (en) | 2012-05-14 | 2016-06-07 | Micron Technology, Inc. | Methods for forming semiconductor device packages with photoimageable dielectric adhesive material, and related semiconductor device packages |
EP2669936B1 (de) * | 2012-06-01 | 2018-02-14 | Nexperia B.V. | Diskrete Halbleiterbauelementverpackung und Herstellungsverfahren |
US10047192B2 (en) | 2012-06-01 | 2018-08-14 | Sirrus, Inc. | Optical material and articles formed therefrom |
EP2677540A1 (de) * | 2012-06-19 | 2013-12-25 | Nxp B.V. | Elektronische Vorrichtung und Verfahren zu dessen Herstellung |
JP5564151B1 (ja) * | 2012-08-06 | 2014-07-30 | 積水化学工業株式会社 | 半導体装置の製造方法及びフリップチップ実装用接着剤 |
JP2014060211A (ja) * | 2012-09-14 | 2014-04-03 | Omron Corp | 基板構造、半導体チップの実装方法及びソリッドステートリレー |
US20140131897A1 (en) * | 2012-11-15 | 2014-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Warpage Control for Flexible Substrates |
WO2014078689A1 (en) | 2012-11-16 | 2014-05-22 | Bioformix Inc. | Plastics bonding systems and methods |
CN105164797B (zh) | 2012-11-30 | 2019-04-19 | 瑟拉斯公司 | 用于电子应用的复合组合物 |
US9245770B2 (en) * | 2012-12-20 | 2016-01-26 | Stats Chippac, Ltd. | Semiconductor device and method of simultaneous molding and thermalcompression bonding |
US9330993B2 (en) * | 2012-12-20 | 2016-05-03 | Intel Corporation | Methods of promoting adhesion between underfill and conductive bumps and structures formed thereby |
US9064880B2 (en) * | 2012-12-28 | 2015-06-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Zero stand-off bonding system and method |
EP2943462B1 (de) | 2013-01-11 | 2018-06-27 | Sirrus, Inc. | Verfahren zur gewinnung von methylenmalonat über bis(hydroxymethyl)malonat-weg |
US9093446B2 (en) * | 2013-01-21 | 2015-07-28 | International Business Machines Corporation | Chip stack with electrically insulating walls |
US8877558B2 (en) * | 2013-02-07 | 2014-11-04 | Harris Corporation | Method for making electronic device with liquid crystal polymer and related devices |
US9881889B2 (en) * | 2013-04-12 | 2018-01-30 | Xintec Inc. | Chip package and method for fabricating the same |
US20140335635A1 (en) * | 2013-05-10 | 2014-11-13 | Osram Sylvania Inc. | Electronic assemblies including a subassembly film and methods of producing the same |
US9293438B2 (en) * | 2013-07-03 | 2016-03-22 | Harris Corporation | Method for making electronic device with cover layer with openings and related devices |
US20150064851A1 (en) * | 2013-09-03 | 2015-03-05 | Rohm And Haas Electronic Materials Llc | Pre-applied underfill |
DE102013220880B4 (de) * | 2013-10-15 | 2016-08-18 | Infineon Technologies Ag | Elektronisches Halbleitergehäuse mit einer elektrisch isolierenden, thermischen Schnittstellenstruktur auf einer Diskontinuität einer Verkapselungsstruktur sowie ein Herstellungsverfahren dafür und eine elektronische Anordung dies aufweisend |
CN107073619A (zh) * | 2014-07-28 | 2017-08-18 | 通用汽车环球科技运作有限责任公司 | 用于增强的粘合剂结合的系统和方法 |
US9315597B2 (en) | 2014-09-08 | 2016-04-19 | Sirrus, Inc. | Compositions containing 1,1-disubstituted alkene compounds for preparing polymers having enhanced glass transition temperatures |
US9416091B1 (en) | 2015-02-04 | 2016-08-16 | Sirrus, Inc. | Catalytic transesterification of ester compounds with groups reactive under transesterification conditions |
US9682533B1 (en) * | 2014-09-09 | 2017-06-20 | Hrl Laboratories, Llc | Methods to form electrical-mechanical connections between two surfaces, and systems and compositions suitable for such methods |
CN105522248B (zh) * | 2014-09-30 | 2018-04-27 | 苏州沃特维自动化系统有限公司 | 一种搬丝装置 |
JP5967629B2 (ja) | 2014-11-17 | 2016-08-10 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 回路モジュール及びその製造方法 |
US10501400B2 (en) | 2015-02-04 | 2019-12-10 | Sirrus, Inc. | Heterogeneous catalytic transesterification of ester compounds with groups reactive under transesterification conditions |
JP6438790B2 (ja) * | 2015-02-06 | 2018-12-19 | デクセリアルズ株式会社 | 半導体装置の製造方法、及びアンダーフィルフィルム |
JP2016149384A (ja) * | 2015-02-10 | 2016-08-18 | パナソニックIpマネジメント株式会社 | 部品実装装置および部品実装方法ならびに部品実装ライン |
JP2016149383A (ja) * | 2015-02-10 | 2016-08-18 | パナソニックIpマネジメント株式会社 | 部品実装装置および部品実装方法ならびに部品実装ライン |
WO2016171623A1 (en) * | 2015-04-20 | 2016-10-27 | Agency For Science, Technology And Research | Conductive polymer composite as plastic solder |
US9334430B1 (en) | 2015-05-29 | 2016-05-10 | Sirrus, Inc. | Encapsulated polymerization initiators, polymerization systems and methods using the same |
US9217098B1 (en) | 2015-06-01 | 2015-12-22 | Sirrus, Inc. | Electroinitiated polymerization of compositions having a 1,1-disubstituted alkene compound |
US9706662B2 (en) * | 2015-06-30 | 2017-07-11 | Raytheon Company | Adaptive interposer and electronic apparatus |
KR102464324B1 (ko) * | 2015-10-27 | 2022-11-09 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지, 그 제조방법 및 이를 포함하는 조명시스템 |
US9518001B1 (en) | 2016-05-13 | 2016-12-13 | Sirrus, Inc. | High purity 1,1-dicarbonyl substituted-1-alkenes and methods for their preparation |
US9567475B1 (en) | 2016-06-03 | 2017-02-14 | Sirrus, Inc. | Coatings containing polyester macromers containing 1,1-dicarbonyl-substituted 1 alkenes |
US10196481B2 (en) | 2016-06-03 | 2019-02-05 | Sirrus, Inc. | Polymer and other compounds functionalized with terminal 1,1-disubstituted alkene monomer(s) and methods thereof |
US9617377B1 (en) | 2016-06-03 | 2017-04-11 | Sirrus, Inc. | Polyester macromers containing 1,1-dicarbonyl-substituted 1 alkenes |
US10428177B2 (en) | 2016-06-03 | 2019-10-01 | Sirrus, Inc. | Water absorbing or water soluble polymers, intermediate compounds, and methods thereof |
US9892985B2 (en) * | 2016-07-18 | 2018-02-13 | Nanya Technology Corporation | Semiconductor device and method for manufacturing the same |
KR20180014903A (ko) * | 2016-08-01 | 2018-02-12 | 삼성디스플레이 주식회사 | 전자 소자, 이의 실장 방법 및 이를 포함하는 표시 장치의 제조 방법 |
US10160066B2 (en) * | 2016-11-01 | 2018-12-25 | GM Global Technology Operations LLC | Methods and systems for reinforced adhesive bonding using solder elements and flux |
US11201066B2 (en) | 2017-01-31 | 2021-12-14 | Skyworks Solutions, Inc. | Control of under-fill using a dam on a packaging substrate for a dual-sided ball grid array package |
US10551261B2 (en) * | 2017-02-28 | 2020-02-04 | Rosemount Inc. | Joint for brittle materials |
US10881007B2 (en) * | 2017-10-04 | 2020-12-29 | International Business Machines Corporation | Recondition process for BGA using flux |
US11039531B1 (en) | 2018-02-05 | 2021-06-15 | Flex Ltd. | System and method for in-molded electronic unit using stretchable substrates to create deep drawn cavities and features |
CN110557937B (zh) * | 2018-05-31 | 2021-08-06 | 铟泰公司 | 有效抑制在bga组合件的不润湿开口的助焊剂 |
US11508648B2 (en) * | 2018-06-29 | 2022-11-22 | Intel Corporation | Coupling mechanisms for substrates, semiconductor packages, and/or printed circuit boards |
US10964660B1 (en) * | 2018-11-20 | 2021-03-30 | Flex Ltd. | Use of adhesive films for 3D pick and place assembly of electronic components |
US10896877B1 (en) | 2018-12-14 | 2021-01-19 | Flex Ltd. | System in package with double side mounted board |
US10568215B1 (en) | 2019-05-20 | 2020-02-18 | Flex Ltd. | PCBA encapsulation by thermoforming |
CN111586990B (zh) * | 2020-05-07 | 2023-03-31 | 中国航空无线电电子研究所 | 印制电路板陶瓷柱栅阵列器件防护处理方法 |
KR20220001311A (ko) * | 2020-06-29 | 2022-01-05 | 삼성전자주식회사 | 반도체 패키지, 및 이를 가지는 패키지 온 패키지 |
CN115602555A (zh) * | 2021-07-09 | 2023-01-13 | 长鑫存储技术有限公司(Cn) | 一种封装方法及其封装结构 |
CN113923865B (zh) * | 2021-09-13 | 2023-08-22 | 华为技术有限公司 | 一种电子组件和电子设备 |
CN115206817A (zh) * | 2022-09-16 | 2022-10-18 | 江苏长电科技股份有限公司 | 改善倒装结构焊接质量的方法 |
Family Cites Families (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61271319A (ja) * | 1985-05-24 | 1986-12-01 | Shin Etsu Chem Co Ltd | 半導体封止用エポキシ樹脂組成物 |
US4745215A (en) * | 1987-04-03 | 1988-05-17 | International Business Machines Corporation | Fluorine containing dicyanate resins |
DE68929282T2 (de) * | 1988-11-09 | 2001-06-07 | Nitto Denko Corp | Leitersubstrat, Filmträger, Halbleiteranordnung mit dem Filmträger und Montagestruktur mit der Halbleiteranordnung |
US5001542A (en) * | 1988-12-05 | 1991-03-19 | Hitachi Chemical Company | Composition for circuit connection, method for connection using the same, and connected structure of semiconductor chips |
JPH0793342B2 (ja) * | 1988-12-29 | 1995-10-09 | シャープ株式会社 | 電極の形成方法 |
US5024372A (en) * | 1989-01-03 | 1991-06-18 | Motorola, Inc. | Method of making high density solder bumps and a substrate socket for high density solder bumps |
US5834799A (en) * | 1989-08-28 | 1998-11-10 | Lsi Logic | Optically transmissive preformed planar structures |
US5468681A (en) * | 1989-08-28 | 1995-11-21 | Lsi Logic Corporation | Process for interconnecting conductive substrates using an interposer having conductive plastic filled vias |
US5074947A (en) * | 1989-12-18 | 1991-12-24 | Epoxy Technology, Inc. | Flip chip technology using electrically conductive polymers and dielectrics |
US4999699A (en) * | 1990-03-14 | 1991-03-12 | International Business Machines Corporation | Solder interconnection structure and process for making |
JP2547895B2 (ja) * | 1990-03-20 | 1996-10-23 | シャープ株式会社 | 半導体装置の実装方法 |
US5060844A (en) * | 1990-07-18 | 1991-10-29 | International Business Machines Corporation | Interconnection structure and test method |
US5086558A (en) * | 1990-09-13 | 1992-02-11 | International Business Machines Corporation | Direct attachment of semiconductor chips to a substrate with a substrate with a thermoplastic interposer |
US5128746A (en) * | 1990-09-27 | 1992-07-07 | Motorola, Inc. | Adhesive and encapsulant material with fluxing properties |
JP2940269B2 (ja) * | 1990-12-26 | 1999-08-25 | 日本電気株式会社 | 集積回路素子の接続方法 |
JP2655768B2 (ja) * | 1991-08-05 | 1997-09-24 | ローム株式会社 | 接着剤及びそれを用いた実装構造 |
US5203075A (en) * | 1991-08-12 | 1993-04-20 | Inernational Business Machines | Method of bonding flexible circuit to cicuitized substrate to provide electrical connection therebetween using different solders |
KR940008327B1 (ko) * | 1991-10-10 | 1994-09-12 | 삼성전자 주식회사 | 반도체 패키지 및 그 실장방법 |
JP2927081B2 (ja) * | 1991-10-30 | 1999-07-28 | 株式会社デンソー | 樹脂封止型半導体装置 |
JPH05175280A (ja) * | 1991-12-20 | 1993-07-13 | Rohm Co Ltd | 半導体装置の実装構造および実装方法 |
JPH06103707B2 (ja) * | 1991-12-26 | 1994-12-14 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体チップの交換方法 |
US5524422A (en) * | 1992-02-28 | 1996-06-11 | Johnson Matthey Inc. | Materials with low moisture outgassing properties and method of reducing moisture content of hermetic packages containing semiconductor devices |
JP3215424B2 (ja) * | 1992-03-24 | 2001-10-09 | ユニシス・コーポレイション | 微細自己整合特性を有する集積回路モジュール |
US5246880A (en) * | 1992-04-27 | 1993-09-21 | Eastman Kodak Company | Method for creating substrate electrodes for flip chip and other applications |
US5324569A (en) * | 1993-02-26 | 1994-06-28 | Hewlett-Packard Company | Composite transversely plastic interconnect for microchip carrier |
US5445308A (en) * | 1993-03-29 | 1995-08-29 | Nelson; Richard D. | Thermally conductive connection with matrix material and randomly dispersed filler containing liquid metal |
JPH06334035A (ja) * | 1993-05-24 | 1994-12-02 | Kawasaki Steel Corp | ウエハのダイシング方法 |
US5386624A (en) * | 1993-07-06 | 1995-02-07 | Motorola, Inc. | Method for underencapsulating components on circuit supporting substrates |
US5474458A (en) * | 1993-07-13 | 1995-12-12 | Fujitsu Limited | Interconnect carriers having high-density vertical connectors and methods for making the same |
US5371328A (en) * | 1993-08-20 | 1994-12-06 | International Business Machines Corporation | Component rework |
US5641997A (en) * | 1993-09-14 | 1997-06-24 | Kabushiki Kaisha Toshiba | Plastic-encapsulated semiconductor device |
US5543585A (en) * | 1994-02-02 | 1996-08-06 | International Business Machines Corporation | Direct chip attachment (DCA) with electrically conductive adhesives |
US5391397A (en) * | 1994-04-05 | 1995-02-21 | Motorola, Inc. | Method of adhesion to a polyimide surface by formation of covalent bonds |
US5861323A (en) * | 1994-06-06 | 1999-01-19 | Microfab Technologies, Inc. | Process for manufacturing metal ball electrodes for a semiconductor device |
JP3233535B2 (ja) * | 1994-08-15 | 2001-11-26 | 株式会社東芝 | 半導体装置及びその製造方法 |
CA2157259C (en) * | 1994-08-31 | 2000-08-29 | Koetsu Tamura | Electronic device assembly and a manufacturing method of the same |
US5497938A (en) * | 1994-09-01 | 1996-03-12 | Intel Corporation | Tape with solder forms and methods for transferring solder to chip assemblies |
US5579573A (en) * | 1994-10-11 | 1996-12-03 | Ford Motor Company | Method for fabricating an undercoated chip electrically interconnected to a substrate |
US5530288A (en) * | 1994-10-12 | 1996-06-25 | International Business Machines Corporation | Passive interposer including at least one passive electronic component |
US5907190A (en) * | 1994-11-24 | 1999-05-25 | Dow Corning Toray Silicone Co., Ltd. | Semiconductor device having a cured silicone coating with non uniformly dispersed filler |
FR2728392A1 (fr) * | 1994-12-16 | 1996-06-21 | Bull Sa | Procede et support de connexion d'un circuit integre a un autre support par l'intermediaire de boules |
US5616958A (en) * | 1995-01-25 | 1997-04-01 | International Business Machines Corporation | Electronic package |
US5742100A (en) * | 1995-03-27 | 1998-04-21 | Motorola, Inc. | Structure having flip-chip connected substrates |
US5587342A (en) * | 1995-04-03 | 1996-12-24 | Motorola, Inc. | Method of forming an electrical interconnect |
US5710071A (en) * | 1995-12-04 | 1998-01-20 | Motorola, Inc. | Process for underfilling a flip-chip semiconductor device |
US5861661A (en) * | 1995-12-27 | 1999-01-19 | Industrial Technology Research Institute | Composite bump tape automated bonded structure |
JPH09232372A (ja) * | 1996-02-26 | 1997-09-05 | Toshiba Microelectron Corp | 半導体装置の製造方法 |
US5801072A (en) * | 1996-03-14 | 1998-09-01 | Lsi Logic Corporation | Method of packaging integrated circuits |
US5880530A (en) * | 1996-03-29 | 1999-03-09 | Intel Corporation | Multiregion solder interconnection structure |
US5704116A (en) * | 1996-05-03 | 1998-01-06 | Motorola, Inc. | Method of holding a component using an anhydride fluxing agent |
JPH09321212A (ja) | 1996-05-30 | 1997-12-12 | Nec Kyushu Ltd | 半導体装置およびその製造方法 |
JP2891184B2 (ja) * | 1996-06-13 | 1999-05-17 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US5891753A (en) * | 1997-01-24 | 1999-04-06 | Micron Technology, Inc. | Method and apparatus for packaging flip chip bare die on printed circuit boards |
US5891754A (en) * | 1997-02-11 | 1999-04-06 | Delco Electronics Corp. | Method of inspecting integrated circuit solder joints with x-ray detectable encapsulant |
US5975408A (en) * | 1997-10-23 | 1999-11-02 | Lucent Technologies Inc. | Solder bonding of electrical components |
US6323062B1 (en) | 1998-04-27 | 2001-11-27 | Alpha Metals, Inc. | Wafer coating method for flip chips |
US6265776B1 (en) | 1998-04-27 | 2001-07-24 | Fry's Metals, Inc. | Flip chip with integrated flux and underfill |
US6228678B1 (en) | 1998-04-27 | 2001-05-08 | Fry's Metals, Inc. | Flip chip with integrated mask and underfill |
US6194788B1 (en) | 1999-03-10 | 2001-02-27 | Alpha Metals, Inc. | Flip chip with integrated flux and underfill |
WO2002058108A2 (en) * | 2000-11-14 | 2002-07-25 | Henkel Loctite Corporation | Wafer applied fluxing and underfill material, and layered electronic assemblies manufactured therewith |
US6660560B2 (en) * | 2001-09-10 | 2003-12-09 | Delphi Technologies, Inc. | No-flow underfill material and underfill method for flip chip devices |
-
1998
- 1998-07-21 EP EP98935858A patent/EP1025587A4/de not_active Withdrawn
- 1998-07-21 JP JP2000503554A patent/JP2001510944A/ja not_active Ceased
- 1998-07-21 AU AU85027/98A patent/AU8502798A/en not_active Abandoned
- 1998-07-21 US US09/120,172 patent/US6121689A/en not_active Expired - Lifetime
- 1998-07-21 WO PCT/US1998/015034 patent/WO1999004430A1/en not_active Application Discontinuation
- 1998-07-21 DE DE1025587T patent/DE1025587T1/de active Pending
- 1998-08-21 US US09/137,971 patent/US6297560B1/en not_active Expired - Lifetime
-
2000
- 2000-09-15 US US09/662,641 patent/US6518677B1/en not_active Expired - Lifetime
- 2000-09-15 US US09/662,642 patent/US6566234B1/en not_active Expired - Lifetime
-
2001
- 2001-08-20 US US09/935,432 patent/US20020014703A1/en not_active Abandoned
-
2003
- 2003-03-19 US US10/390,603 patent/US6774493B2/en not_active Expired - Lifetime
-
2004
- 2004-05-28 US US10/855,708 patent/US20050218517A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2001510944A (ja) | 2001-08-07 |
WO1999004430A1 (en) | 1999-01-28 |
AU8502798A (en) | 1999-02-10 |
US20030218261A1 (en) | 2003-11-27 |
US20050218517A1 (en) | 2005-10-06 |
US6518677B1 (en) | 2003-02-11 |
US6121689A (en) | 2000-09-19 |
US6774493B2 (en) | 2004-08-10 |
US6566234B1 (en) | 2003-05-20 |
US20020014703A1 (en) | 2002-02-07 |
EP1025587A1 (de) | 2000-08-09 |
EP1025587A4 (de) | 2000-10-04 |
US6297560B1 (en) | 2001-10-02 |
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