DE10250868B8 - Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors - Google Patents

Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors Download PDF

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Publication number
DE10250868B8
DE10250868B8 DE10250868A DE10250868A DE10250868B8 DE 10250868 B8 DE10250868 B8 DE 10250868B8 DE 10250868 A DE10250868 A DE 10250868A DE 10250868 A DE10250868 A DE 10250868A DE 10250868 B8 DE10250868 B8 DE 10250868B8
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Germany
Prior art keywords
field effect
effect transistor
vertically integrated
producing
integrated field
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Expired - Fee Related
Application number
DE10250868A
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English (en)
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DE10250868A1 (de
DE10250868B4 (de
Inventor
Wolfgang Dr. Hönlein
Franz Dr. Kreupl
Andrew Dr. Graham
Michael Dr. Specht
Franz Dr. Hofmann
Johannes Dr. Kretz
Erhard Landgraf
Johannes R. Dr. Luyken
Wolfgang Dr. Rösner
Thomas Schulz
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Qimonda AG
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Qimonda AG
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Priority to DE10250868A priority Critical patent/DE10250868B8/de
Priority to US10/533,550 priority patent/US7709827B2/en
Priority to EP03778239A priority patent/EP1556909A1/de
Priority to PCT/DE2003/003587 priority patent/WO2004040666A1/de
Publication of DE10250868A1 publication Critical patent/DE10250868A1/de
Application granted granted Critical
Publication of DE10250868B4 publication Critical patent/DE10250868B4/de
Publication of DE10250868B8 publication Critical patent/DE10250868B8/de
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
DE10250868A 2002-10-31 2002-10-31 Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors Expired - Fee Related DE10250868B8 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE10250868A DE10250868B8 (de) 2002-10-31 2002-10-31 Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors
US10/533,550 US7709827B2 (en) 2002-10-31 2003-10-29 Vertically integrated field-effect transistor having a nanostructure therein
EP03778239A EP1556909A1 (de) 2002-10-31 2003-10-29 Vertikal integriertes bauelement, bauelement-anordnung und verfahren zum herstellen eines vertikal integrierten bauelements
PCT/DE2003/003587 WO2004040666A1 (de) 2002-10-31 2003-10-29 Vertikal integriertes bauelement, bauelement-anordnung und verfahren zum herstellen eines vertikal integrierten bauelements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10250868A DE10250868B8 (de) 2002-10-31 2002-10-31 Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors

Publications (3)

Publication Number Publication Date
DE10250868A1 DE10250868A1 (de) 2004-05-19
DE10250868B4 DE10250868B4 (de) 2008-03-06
DE10250868B8 true DE10250868B8 (de) 2008-06-26

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Country Status (4)

Country Link
US (1) US7709827B2 (de)
EP (1) EP1556909A1 (de)
DE (1) DE10250868B8 (de)
WO (1) WO2004040666A1 (de)

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US7598516B2 (en) * 2005-01-07 2009-10-06 International Business Machines Corporation Self-aligned process for nanotube/nanowire FETs
US9911743B2 (en) * 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7781862B2 (en) * 2005-05-09 2010-08-24 Nantero, Inc. Two-terminal nanotube devices and systems and methods of making same
WO2007064334A1 (en) * 2005-12-02 2007-06-07 Advanced Micro Devices, Inc. Polymer-based transistor devices, methods, and systems
EP1804286A1 (de) * 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Halbleitervorrichtung mit einer verlängerten Nanostruktur
DE102006009721B4 (de) * 2006-03-02 2011-08-18 Qimonda AG, 81739 Nanodraht (Nanowire)-Speicherzelle und Verfahren zu deren Herstellung
US8679630B2 (en) * 2006-05-17 2014-03-25 Purdue Research Foundation Vertical carbon nanotube device in nanoporous templates
KR20090075819A (ko) * 2006-09-19 2009-07-09 큐나노 에이비 나노스케일 전계 효과 트랜지스터의 조립체
US9487877B2 (en) * 2007-02-01 2016-11-08 Purdue Research Foundation Contact metallization of carbon nanotubes
KR101377597B1 (ko) * 2007-03-21 2014-03-27 삼성디스플레이 주식회사 트랜지스터 및 그 제조방법
JP4122043B1 (ja) * 2007-04-25 2008-07-23 株式会社クレステック 面放出型電子源および描画装置
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WO2009150999A1 (ja) * 2008-06-09 2009-12-17 独立行政法人産業技術総合研究所 ナノワイヤ電界効果トランジスタ及びその作製方法、並びにこれを含む集積回路
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Publication number Publication date
DE10250868A1 (de) 2004-05-19
EP1556909A1 (de) 2005-07-27
WO2004040666A1 (de) 2004-05-13
DE10250868B4 (de) 2008-03-06
US7709827B2 (en) 2010-05-04
US20060128088A1 (en) 2006-06-15

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Inventor name: SCHULZ, THOMAS, 81737 MUENCHEN, DE

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Inventor name: KRETZ, JOHANNES, DR., 80538 MUENCHEN, DE

Inventor name: GRAHAM, ANDREW, DR., 81547 MUENCHEN, DE

Inventor name: LUYKEN, JOHANNES R., DR., 81825 MUENCHEN, DE

Inventor name: SPECHT, MICHAEL, DR., 80799 MUENCHEN, DE

Inventor name: KREUPL, FRANZ, DR., 80802 MUENCHEN, DE

Inventor name: LANDGRAF, ERHARD, 81543 MUENCHEN, DE

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Inventor name: SCHULZ, THOMAS, 81737 MUENCHEN, DE

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