DE102013009444A1 - Substrate and / or component for the protection of at least one bonding wire - Google Patents
Substrate and / or component for the protection of at least one bonding wire Download PDFInfo
- Publication number
- DE102013009444A1 DE102013009444A1 DE102013009444.5A DE102013009444A DE102013009444A1 DE 102013009444 A1 DE102013009444 A1 DE 102013009444A1 DE 102013009444 A DE102013009444 A DE 102013009444A DE 102013009444 A1 DE102013009444 A1 DE 102013009444A1
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- substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 125000006850 spacer group Chemical group 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 6
- 238000001746 injection moulding Methods 0.000 abstract description 3
- 238000004049 embossing Methods 0.000 abstract description 2
- 229920003023 plastic Polymers 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
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- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
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- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/067—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of fibres or filaments
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
Abstract
Die Erfindung betrifft ein Substrat und/oder mindestens ein Bauteil, welches solche Vertiefungen (11; 21; 31; 41) enthält, die so direkt eingearbeitet und angeordnet sowie dimensioniert sind, dass die Bonddrähte darin vollständig versenkbar sind bzw. aufgenommen werden können. Das Bauteil ist insbesondere ein optisches Bauteil, wie eine Linse, oder kann auch ein Abdeckelement, insbesondere aus Glas sein, dass ausgestellte Vertiefungen an den Positionen der Bonddrähte (12; 22; 32; 42), enthält. Die entsprechenden Vertiefungen können flexibel mit der Herstellung des Substrats und/oder Bauteils eingebracht sein oder nachträglich durch bekannte Methoden wie Spritzguss, Wafersägen, Prägen, Lasern, in verschiedenen Formen eingebracht werden. Das Substrat bzw. Bauteil findet insbesondere bei kleinstdimensionierten Halbleiterbauteile, wie Bildsensoren, Zeilensensoren, LED's, Photodioden, Drucksensoren, Oberflächen-Scan-Sensoren Verwendung.The invention relates to a substrate and / or at least one component which contains such depressions (11; 21; 31; 41) which are incorporated and arranged and dimensioned so directly that the bond wires can be completely sunk or received therein. The component is, in particular, an optical component, such as a lens, or can also be a cover element, in particular made of glass, that contains flared depressions at the positions of the bond wires (12; 22; 32; 42). The corresponding depressions can be introduced flexibly with the production of the substrate and / or component or can be introduced subsequently in various forms by known methods such as injection molding, wafer sawing, embossing, lasers. The substrate or component is used in particular in the case of very small semiconductor components, such as image sensors, line sensors, LEDs, photodiodes, pressure sensors and surface scan sensors.
Description
Die vorliegende Erfindung betrifft mindestens ein Substrat und/oder ein optisches Bauteil, in welchem zum Zweck des Schutzes von mindestens einem Bonddraht vor mechanischem Materialstress und Beschädigungen erfindungsgemäße Vertiefungen eingearbeitet sind.The present invention relates to at least one substrate and / or an optical component in which recesses according to the invention are incorporated for the purpose of protecting at least one bonding wire from mechanical stress and damage.
Das Drahtbonden bezeichnet in der Aufbau- und Verbindungstechnik einen Verfahrensschritt, bei dem mittels dünner Drähte (Bonddraht) die Anschlüsse eines integrierten Schaltkreises oder eines diskreten Halbleiters (z. B. Transistor, Leuchtdiode oder Photodiode) mit den elektrischen Anschlüssen des Chipgehäuses verbunden werden. Der Vorgang der Draht-Kontaktierung wird als Drahtbonden bezeichnet. Das Drahtbonden wird aber auch in der Hybridtechnik, als auch bei diskreten Bauteilen angewandt. Bei elektronischen Schaltkreisen sind zum Beispiel die außen sichtbaren Anschlüsse über Bonddrähte im Innern des Gehäuses mit den Chip-Anschlüssen verbunden. Die Aufgabe des Bonddrahtes ist die elektrische Verbindung zwischen der eigentlichen integrierten Schaltung bzw. dem nackten Bauteil und dem Verdrahtungsträger (mechanischer Träger auf dem Leitungsstrukturen zur Verdrahtung elektronischer Bauelemente aufgebracht sind; Leiterplatten oder auch unbestückte Multi-Chip-Module). Der Bonddraht wird von der Anschlussfläche z. B. eines Chips zum inneren Teil des Anschlussbeins gezogen und an beiden Stellen verschweißt. Nach dem Drahtbonden werden die Bauteile verkappt, das heißt, hermetisch in einem Gehäuse eingeschlossen oder in Kunststoffe bzw. Kunstharz eingegossen. Die beiden Verfahrensschritte werden als Zyklus 2 oder „Backend” der Halbleiterfertigung bezeichnet. Es werden hauptsächlich die beiden Verfahren Thermosonicbonden und Ultrasonicbonden angewendet. Die Bondtechnologie hat ihre Bedeutung im gesamten Bereich der mikroelektronischen Aufbau- und Verbindungstechnik, beim Verbinden von Leuchtdioden, der Leuchtdiodenanordnung, bei Photodioden, bei Sensoreinrichtungen, wie beispielsweise Drucksensoren, Bildsensoren oder Zeilensensoren. Die Bonddrähte sind aus Materialien wie zum Beispiel Gold, Aluminium, Kupfer und sind gegebenenfalls auch Aluminium beschichtete Kupfer- und Golddrähte. Um diese Halbleiterbauteile insbesondere vor mechanischem Stress und Beschädigungen zu schützen, werden die Bauteile verkappt, das heilt thermetisch in einem Gehäuse eingeschlossen oder in Plaste bzw. Kunstharz eingegossen. Um Beschädigungen zu vermeiden werden auch Abstandselemente verwendet, die zwischen die Bauteile geklebt oder in geeigneter Weise eingebunden werden, damit eine hermetische Abdichtung gewährleistet wird. Die bekannten Lösungen durch Direktaufkleben oder mit Abstandselementen erfüllen jedoch allesamt nicht die Erfordernisse, um die Forderungen in immer kleiner und leichter werdenden Bauteilen, wie z. B. für Bildsensoren, Oberflächen-Scan-Sensoren für kleinste Chipoberflächen zu realisieren.In the construction and connection technique, wire bonding designates a method step in which the terminals of an integrated circuit or of a discrete semiconductor (eg transistor, light-emitting diode or photodiode) are connected to the electrical connections of the chip housing by means of thin wires (bonding wire). The process of wire bonding is called wire bonding. However, wire bonding is also used in hybrid technology as well as in discrete components. In electronic circuits, for example, the externally visible terminals are connected via bonding wires inside the housing to the chip terminals. The task of the bonding wire is the electrical connection between the actual integrated circuit or the bare component and the wiring carrier (mechanical support on which conductive structures for wiring electronic components are applied, printed circuit boards or even unpopulated multi-chip modules). The bonding wire is z of the pad. B. a chip pulled to the inner part of the connecting leg and welded in two places. After wire bonding, the components are capped, that is hermetically sealed in a housing or molded into plastics or synthetic resin. The two process steps are referred to as cycle 2 or "backend" of semiconductor manufacturing. The two methods thermosonic bonding and ultrasonic bonding are mainly used. Bonding technology has significance in the entire field of microelectronic assembly and connection technology, in the connection of light-emitting diodes, in the light-emitting diode arrangement, in photodiodes, in sensor devices, such as, for example, pressure sensors, image sensors or line sensors. The bonding wires are made of materials such as gold, aluminum, copper and are optionally also aluminum coated copper and gold wires. In order to protect these semiconductor components in particular from mechanical stress and damage, the components are capped, which heals thermally enclosed in a housing or cast in plastic or plastic. In order to avoid damage, spacers are also used which are glued between the components or suitably bound in order to ensure a hermetic seal. However, the known solutions by Direktaufkleben or with spacers do not meet all the requirements to meet the demands in ever smaller and lighter components, such. As for image sensors to realize surface scan sensors for the smallest chip surfaces.
Aufgabe der Erfindung ist es also, eine einfache und kostengünstige Lösung zu finden, um Bonddrähte (
Die Aufgabe der Erfindung wird durch ein Substrat und/oder Bauteil realisiert, welches solche Vertiefungen (
In den Ausführungsbeispielen der
Bezugszeichen:Reference numerals:
In den Zeichnungen (
BezugszeichenlisteLIST OF REFERENCE NUMBERS
- 10; 4010; 40
- Optik (z. B. Linse)Optics (eg lens)
- 11; 21; 31; 4111; 21; 31; 41
- Vertiefung/enDeepening / s
- 12; 22, 32; 4212; 22, 32; 42
- Bonddrahtbonding wire
- 13; 23; 33; 4313; 23; 33; 43
- Leiterplattecircuit board
- 14; 24;14; 24;
- Chipchip
- 15; 25; 35; 4615; 25; 35; 46
- Trägerplattesupport plate
- 20; 3020; 30
- Glasabdeckungglass cover
- 3434
- Drucksensorpressure sensor
- 4444
- Bildsensorimage sensor
- 4545
- Abstandhalterspacer
Ein weiterer Vorteil der Erfindung ist, dass keine zusätzliche Wärme zugeführt wird muss, die bei eine Verkappung durch das Eingiessen entsteht.Another advantage of the invention is that no additional heat must be supplied, which results from capping by the pouring.
In
Aus
Claims (8)
Priority Applications (2)
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DE202013012118.1U DE202013012118U1 (en) | 2013-05-31 | 2013-05-31 | Substrate and / or component for the protection of at least one bonding wire |
DE102013009444.5A DE102013009444A1 (en) | 2013-05-31 | 2013-05-31 | Substrate and / or component for the protection of at least one bonding wire |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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DE102013009444.5A DE102013009444A1 (en) | 2013-05-31 | 2013-05-31 | Substrate and / or component for the protection of at least one bonding wire |
Publications (1)
Publication Number | Publication Date |
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DE102013009444A1 true DE102013009444A1 (en) | 2014-12-04 |
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DE102013009444.5A Withdrawn DE102013009444A1 (en) | 2013-05-31 | 2013-05-31 | Substrate and / or component for the protection of at least one bonding wire |
DE202013012118.1U Expired - Lifetime DE202013012118U1 (en) | 2013-05-31 | 2013-05-31 | Substrate and / or component for the protection of at least one bonding wire |
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DE202013012118.1U Expired - Lifetime DE202013012118U1 (en) | 2013-05-31 | 2013-05-31 | Substrate and / or component for the protection of at least one bonding wire |
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DE102018210909A1 (en) | 2017-09-21 | 2019-03-21 | Robert Bosch Gmbh | Method for producing camera modules and a camera module group |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6025728A (en) * | 1997-04-25 | 2000-02-15 | Micron Technology, Inc. | Semiconductor package with wire bond protective member |
US7863642B2 (en) * | 2005-08-24 | 2011-01-04 | Koninklijke Philips Electronics N.V. | Light emitting diodes and lasers diodes with color converters |
US8342021B2 (en) * | 2009-02-17 | 2013-01-01 | Seiko Epson Corporation | Composite sensor and electronic device |
-
2013
- 2013-05-31 DE DE102013009444.5A patent/DE102013009444A1/en not_active Withdrawn
- 2013-05-31 DE DE202013012118.1U patent/DE202013012118U1/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6025728A (en) * | 1997-04-25 | 2000-02-15 | Micron Technology, Inc. | Semiconductor package with wire bond protective member |
US7863642B2 (en) * | 2005-08-24 | 2011-01-04 | Koninklijke Philips Electronics N.V. | Light emitting diodes and lasers diodes with color converters |
US8342021B2 (en) * | 2009-02-17 | 2013-01-01 | Seiko Epson Corporation | Composite sensor and electronic device |
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