DE102012103295A1 - Device useful for coating semiconductor substrates, comprises processing unit, which is centrally arranged transfer module, loading- or unloading interface, power modules comprising a gas mixing system, pipelines, and a service space - Google Patents

Abstract

Device comprises: a processing unit (2), which is centrally arranged transfer module (7), which connects the closable transfer openings with the transfer module for carrying out a coating process; a loading- or unloading interface for supplying the substrates to be coated and for removing the coated substrates; power modules respectively comprising a gas mixing system for providing mass flow-controlled process gases; pipelines through which process gases are fed to reactor housings; and at least one service space (6) from which at least one supply module, and a reactor housing is accessible. Device comprises: a processing unit (2), which is centrally arranged transfer module (7), which connects the closable transfer openings with the transfer module for carrying out a coating process in a process chamber (4) arranged in a reactor housing (12); a loading- or unloading interface for supplying the substrates to be coated and for removing the coated substrates; power modules respectively comprising a gas mixing system for providing mass flow-controlled process gases; pipelines through which the process gases are fed to the reactor housings, where the process gases are fed to the process chambers; and at least one service space (6) from which at least one supply module, and a reactor housing is accessible. The process unit is surrounded by the power supply modules such that a common service space is arranged between the power supply module and reactor housing of the process unit.

Description

Apparatus for coating semiconductor substrates having a process unit which has a centrally arranged transfer module, a plurality of process chambers, each connected to the transfer module via a closable transfer opening, arranged in a reactor housing for carrying out a coating process, with a loading / unloading interface for supply to be coated and Draining coated substrates with utility modules, each having a gas mixing system for providing mass flow controlled process gases, with conduits through which the process gases are delivered to the reactor housings where the process gases are fed into the process chambers and at least one maintenance space therefrom at least one reactor housing and a supply module is accessible.

A device of the type described above is of the US 2008/0 019 806 A1 described. The device described therein has a central transfer module with a gripper, which is connected via a plurality of transfer openings with a total of three process chambers each of a process chamber housing. An opening of the transfer module forms a loading / unloading interface. Each of the local process chamber housings is connected to a gas supply unit, which is arranged directly next to the process chamber housing. About a maintenance space, which is arranged around the gas supply facilities, the gas supply facilities are accessible for maintenance purposes. In a spatial distance are power supply units to supply the supply modules or the process chamber modules with electrical energy.

The US 6,939,403 B2 describes a coating device having a plurality of juxtaposed and stacked process chambers. Using a gripper, the process chambers can be equipped with substrates that are treated within the process chambers. Via a supply channel, the process chambers combined into a cluster are connected to a supply module.

The WO 2010/054 206 A2 describes a coating device for semiconductor substrates, in which a plurality of modules are arranged above and next to each other. Between the individual modules, accessible free spaces are arranged in order to be able to reach the modules for maintenance purposes.

The devices of the type described above find application in the industrial manufacture of semiconductor devices. As a blank, a so-called. Wafer is used, which is a thin, usually circular disc of a semiconductor material or other suitable material. In silicon technology but also in gallium nitride technology, such wafers consist of silicon, in particular monocrystalline silicon, but also of sapphire. In the III-V technology, however, the wafers can also consist of a suitable III-V material. The invention relates to an arrangement of aggregates which serve for the coating of the wafers or else for their thermal treatment. The wafers, also referred to below as substrates, are treated in a process unit. A process unit may include one or more reactor housings. Each of the one or more reactor housings may include one or more process chambers. In these process chambers, one or more substrates are simultaneously subjected to a treatment step. Typically, the treatment step is a coating process. The substrates are coated with a thin semiconductor layer, insulating layer or electrically conductive layer, wherein the constituents of the layer are conveyed in the gaseous state through pipes to the reactor housings. The provision of these process gases takes place in a gas mixing system, which has electronically controlled mass flow controllers and valves, with which a multiplicity of different gas streams are mixed, which are fed into the process chambers via a plurality of pipelines. The gas mixing system is part of a supply unit, which optionally also includes a vacuum device, if the coating process carried out in the process chambers takes place in a low pressure range. It is known to combine a plurality of process chambers or reactor housings into a cluster unit which has a transfer unit which has a gripping arm with which the substrates can be retrieved from a storage module and inserted into a process chamber. Such a cluster unit may have a plurality of memory modules in which a plurality of substrates are cached. Such devices are known from the DE 101 59 702 A1 . US 6,454,367 B1 . US Pat. No. 6,440,261 B1 and the US 5,855,675 , The arrangement of the process chambers with each other and with respect to the memory modules and the transfer unit may vary. For example, this describes US 4,951,601 a pentagonal, that US 5,061,144 A a linear, the US 19930175114 an annular and the US 4,592,306 a hexagonal arrangement.

Such cluster units are operated in so-called. Clean rooms in which the air contains a minimum concentration of suspended solids. The transfer unit and the loading and unloading the reactor housing can have in a particularly high degree of purity Housing be arranged. In general, the available space is expensive, so it must be used optimally. On the other hand, the units used to process the semiconductor substrates must not be placed close to each other as they must be accessible by maintenance personnel for maintenance purposes. In the prior art openable hatches or the like are provided for maintenance purposes, through which a maintenance person can get access to one of the units access. In the prior art, the maintenance of the individual components is cumbersome due to the structural conditions. There is little room for maintenance.

The object of the invention is to optimize the arrangement of the components required for processing the semiconductor substrates in such a way that access for maintenance purposes is simplified.

The object is achieved by the invention specified in the claims. First and foremost, it is provided that the process unit is arranged in a central region of the device. This central area of the device is surrounded by a contiguous or a plurality of individual sections maintenance space. The process unit and the supply unit according to the invention form spatially separate components. The maintenance openings of a supply housing or a process unit housing may be opposite. The maintenance floor area from which both the supply unit and the process unit are accessible need not be larger than sufficient to accommodate a single person, since maintenance work on the supply unit and maintenance on the process unit need not take place simultaneously. The service openings may be associated with vertically extending housing walls. It may in each case be a closable opening, which are arranged in a vertical wall of the housing of the supply unit or in a vertical wall of the housing of the process unit. The maintenance openings may face each other such that a service person who is standing with his chest in front of a maintenance opening has another maintenance opening in his back. The minimum width of the maintenance floor area or the minimum horizontal distance between the process unit and the supply unit may correspond to the legally required escape route width and, for example, be in the range between 80 cm and 90 cm. Of particular advantage is the spatial separation of the cluster unit from its supply unit, the cluster unit having a plurality of process chambers and a transfer unit with gripper arm. The spatially separate process unit is connected to the supply unit via a supply or connecting channel, which receives the pipes, with which the process gases are conveyed from the supply unit to the process unit. In addition, electrical lines for controlling or supplying energy can run through the connecting channel. Furthermore, the process unit can be connected via a further pipeline, which also runs through this or another connecting channel, to a vacuum device which has a vacuum pump with which a low pressure is generated within the process chamber. The device according to the invention can furthermore have a plasma generator or a high-frequency generator. With the plasma generator, a plasma can be generated within the process chamber. With the high-frequency generator, the process chamber and in particular a arranged in the process chamber, the substrates bearing susceptor can be heated. For this purpose, the susceptor consists of an electrically conductive material, for example graphite or molybdenum, and is heated by means of eddy currents induced therein. The generator may spatially be assigned to the process unit but also spatially to the supply unit. The connecting channel can run at ground level. But it can also have a vertical distance to the maintenance floor area.

Preferably, this vertical distance is greater than a man height, so that there may be a maintenance person upright. The connecting channel can cross the maintenance clearance. This is particularly advantageous when facing the process unit and the maintenance unit, and in particular, when maintenance openings of the housing of the process unit and maintenance openings of the supply housing are opposite. The process unit may comprise a plurality of individual reactors each having a process chamber. The process chamber can be loaded via the transfer module with substrates to be coated. The substrates are for this purpose on a substrate holder, which is introduced by means of a gripper device of the transfer module in the process chamber. After coating the substrates resting on the substrate holder, the substrate holder is removed from the process chamber together with the substrates. The device preferably has a memory module. In this memory module can be stored vertically stacked several substrate holder. Both substrate holders with substrates to be coated and substrate holders with already coated substrates can be stored within the memory module. The storage module as well as the transfer chamber and the process chambers can be evacuated by means of a vacuum pump. Preferably, the transfer chamber and the storage module are permanently in the evacuated state held. The loading of the memory module via a lock, which is connected to a loading / unloading interface. The lock may be connected to a gripper device, so that substrate holder can be brought by the loading / unloading automated or semi-automated means of the gripper device in the lock. By means of the gripper device of the transfer module, the substrate holders can be brought from the lock into the storage module or the process chambers. The lock is closed gas-tight to the outside. The substrate holders, which are temporarily stored in the memory module, are picked up by the gripper device of the transfer module and introduced into one of the process chambers, where a layer is deposited on the substrates or where the substrates are thermally treated. In one process chamber, one process step can be carried out in each case. But it is also possible to carry out a plurality of process steps in a row within a process chamber. In a preferred embodiment of the invention, the transfer module has a central transfer chamber with a gripper and a total of six transfer openings. A transfer port is connected to the lock via which the loading and unloading takes place. A transfer opening opposite to this transfer opening is connected to the storage module. In each case two adjacent transfer openings are connected to process chambers of a respective MOCVD reactor, wherein, preferably, two MOCVD reactors are combined to form a twin reactor. The two twin reactors are located on opposite sides of an axis formed by the memory module and the loading / unloading interface. On both sides of this axis there are maintenance clearances, from each of which a reactor of the twin reactor arrangement is accessible. The common housing of the twin reactor arrangement is connected to a supply unit via a supply channel which crosses the maintenance space. Within the supply unit is a gas mixing system in which the process gases are prepared, which are brought via the pipes to the MOCVD reactors. Liquid or solid organometallic sources may also be stored in the supply units. The vacuum devices with which the process chambers are evacuated are preferably located within the process unit, and more preferably below each MOCVD reactor. The gas leads run from the process unit through the supply channels to the respective supply units, where the exhaust gases can be treated or cleaned. The loading / unloading device may have a glove box. There, the substrate holder can be equipped with the substrates. The loading / unloading interface is preferably formed by a loading / unloading housing. The transfer module is usually only accessible from above for maintenance purposes. The device may have a corresponding bridge, via which the maintenance personnel can reach the transfer chamber top side. Additionally or alternatively, however, it is also provided that one of the units, in particular the storage module, can be separated from the transfer chamber. Then a lateral access to the transfer module is possible to perform maintenance there.

An embodiment of the invention will be explained below with reference to accompanying drawings. Show it:

1 schematically the plan of an embodiment,

2 a first side view, and

3 a second side view.

The apparatus shown in the drawings is in a high-purity space and includes components for depositing semiconductor layers on semiconductor substrates.

The device has a supply unit 1 on, spatially from a process unit 2 is disconnected. Between the process unit 2 and the supply unit 1 there is a maintenance room 6 coming from a supply channel 3 is crossed. The supply channel 3 connects the process unit 2 with the supply unit 1 so that the supply unit 1 and the process unit 2 from the width of the maintenance clearance 6 are separated from each other. The width is about 80 cm to 90 cm. With the reference numbers 15 . 16 and 17 Maintenance openings are indicated. The maintenance openings consist of closable hatches of the housing of the supply unit 1 on the one hand and the housing of the process unit 2 on the other hand.

The housing of the process unit 2 stands on the horizontal floor of a clean room. It contains a reactor housing 12 in which there is a process chamber 4 located. The process chamber 4 has a process chamber bottom, which is formed by a susceptor, on which the semiconductor substrates to be coated can be placed. The susceptor is heated from below. By gas inlet means, not shown, process gases are passed into the process chamber, which decompose there pyrolytically, so that at least one layer is deposited on the semiconductor substrate. The reactor housing 12 may be located in a glove box that is separate from the housing of the process chamber 2 is trained. One of the walls of the glove box may be the maintenance opening 17 form.

The process gases are piped over 11 to the reactor housing 12 transported. In the figures, for the sake of clarity, only one pipeline 11 symbolically indicated. Through the channel 3 In addition, electrical lines, not shown, extend to sensors or the like within the process chamber 12 , Through the connection channel 3 In addition, energy supply lines can also run with which the process chamber 4 is heated. The heating can be done via a resistance heater or via an RF heater. A gas outlet member of the reactor housing 12 is with a gas discharge 14 connected. This pipeline 14 also runs through the connection channel 3 , The connection channel 3 can along the ground 5 the maintenance free space 6 and / or vertically spaced therefrom.

The width of the maintenance clearance 6 between supply unit 1 and process unit 2 is chosen such that there at least one person can stay for maintenance purposes and access to the maintenance opening 17 the process unit 2 and to the maintenance openings 15 . 16 the supply unit 1 gets.

The supply unit 1 has a housing in which one with the reference numeral 10 indicated gas mixing system is arranged. In the gas mixing system 10 There are mass flow controllers and valves. The gas mixing system 10 is connected to a gas supply system, not shown, in particular arranged outside the clean room area, in which the process gases or carrier gases are stored in gas cylinders or tanks. In the gas mixing system 10 , which is located within the supply housing arranged in the clean room zone, the process gases are mixed with the carrier gases. They are metered by means of the mass flow controller and via valves in the individual pipelines 11 fed to the process gases in the process chamber 4 promote. Within the gas mixing system but also liquid or solid starting materials can be stored. For example, liquid or solid organometallic compounds can be stored in so-called bubblers, which are flushed through by a carrier gas stream in order to convey the organometallic compound in gaseous form to the process chamber. Over one or more maintenance openings 16 a maintenance person gets access to the gas mixing system. Inside the housing of the supply unit 1 can also be arranged a treatment device for exhaust gases.

With the reference number 13 is referred to a vacuum device having a vacuum pump via which the process chamber 4 or the transfer chamber of the transfer module 7 or the interior of the memory module 8th can be evacuated.

The exemplary embodiment illustrated in the drawings includes a mirror-symmetrical arrangement. The transfer module is located in the symmetry plane 7 which has a total of six transfer openings 20 having. Two diametrically opposite transfer openings 20 lie in the axis of symmetry. A transfer opening 20 connects the transfer chamber of the transfer module 7 with a lock chamber 18 , The opposite transfer opening 20 connects the transfer chamber to the interior of the storage module 8th in which a plurality of substrate holders can be stacked one above the other, which are equipped with coated or coated substrates.

The lock chamber 18 connects the transfer chamber of the transfer module 7 or all connected chambers with the outside world. The lock chamber 18 can with a gripper 21 be loaded, the gripper 21 equipped substrate holder of the loading / unloading device 22 into the lock chamber 18 can bring. The gripper 23 The transfer chamber can after evacuation of the lock chamber 18 the substrate holder from the lock chamber 18 and, for example, in the memory module 8th lay down.

The transfer module 7 has a roughly hexagonal floor plan. On two opposite sides there are two juxtaposed transfer openings 20 , with which the transfer chamber each with a process chamber 4 a MOCVD reactor 12 connected is. On each side of the plane of symmetry are two reactors combined into a twin arrangement 12 , each via a connection channel 3 be supplied with process gases. The connection channels 3 in each case intersect a maintenance space 6 ,

With the reference number 9 is a generator referred to, with which a high frequency is generated to the susceptors of the process chambers 4 to heat. The generator 9 is in the embodiment spatially the process unit 2 assigned. The generator 9 Alternatively, it may also be spatially the supply unit 1 be assigned. He is then on lines through the connection channel 3 go with the process unit 2 functionally connected.

From the 2 and 3 shows that the process unit 2 via two superimposed maintenance channels 3 with the supply units functionally assigned to them 1 are connected. Each supply unit 1 owns a gas mixing system 10 in which the process gases are prepared via the pipelines 11 to the MOCVD reactors 12 to be brought.

The maintenance clearances 6 form service areas that can be used twice. For a first usage, one can be on the service area 5 standing person over maintenance openings 17 Maintenance work on a process unit 2 make. In the second function, a person can perform maintenance through the maintenance openings 15 . 16 through at the supply unit 1 make. The respective maintenance openings 15 . 16 respectively. 17 are related to the service area 5 in opposite spatial directions, leaving a breast side to the maintenance opening 15 . 16 standing person the maintenance opening 17 in the back or vice versa. Again, the width of the maintenance free space corresponds 6 the legal escape route width of about 80 cm to 90 cm.

As can be seen from the drawings, the transfer module 7 only accessible from above. In order to allow accessibility from the side for maintenance purposes, the connection between the memory module 8th and the transfer module 7 separable. The memory module 8th can, for example, stand on rollers, so that after releasing the connection from the transfer module 7 can be separated. It then forms a maintenance area, via the transfer module 7 is accessible for maintenance purposes.

All disclosed features are essential to the invention. The disclosure of the associated / attached priority documents (copy of the prior application) is hereby also incorporated in full in the disclosure of the application, also for the purpose of including features of these documents in claims of the present application. The subclaims characterize in their optionally sibling version independent inventive developments of the prior art, in particular to make on the basis of these claims divisional applications.

LIST OF REFERENCE NUMBERS

1

Supply unit / module

2

process unit

3

Supply channel / link channel

4

process chamber

5

floor area

6

Service space

7

transfer module

8th

memory module

9

generator

10

Gas mixing system

11

pipeline

12

Reactor housing / MOCVD reactor

13

vacuum equipment

14

pipeline

15

Maintenance opening / maintenance access

16

Maintenance opening / maintenance access

17

Maintenance opening / maintenance access

18

lock chamber

19

supply channel

20

transfer opening

21

grab

22

Loading / unloading / loading / Entladeschnittstelle

23

grab

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• US 2008/0019806 A1 [0002]
• US 6939403 B2 [0003]
• WO 2010/054206 A2 [0004]
• DE 10159702 A1 [0005]
• US 6454367 B1 [0005]
• US 6440261 B1 [0005]
• US 5855675 [0005]
• US 4951601 [0005]
• US Pat. No. 5,061,144 A [0005]
• US 19930175114 [0005]
• US 4592306 [0005]

Claims (10)

Device for coating semiconductor substrates with a process unit ( 2 ), which is a centrally located transfer module ( 7 ), several with the transfer module ( 7 ) via in each case a closable transfer opening ( 20 ), each in a reactor housing ( 12 ) arranged process chambers ( 4 ) for carrying out a coating process, with a loading / unloading interface ( 22 ) for supplying substrates which are to be coated and removed for removal, with supply modules ( 1 ), each one a gas mixing system ( 13 ) for the provision of mass flow-controlled process gases, with pipelines ( 11 ), through which the process gases to the reactor housings ( 12 ), where the process gases into the process chambers ( 4 ) and at least one maintenance space ( 6 ), from which at least one reactor housing ( 12 ) and a supply module ( 1 ), characterized in that the process unit ( 2 ) from the supply modules ( 1 ) is surrounded, that between each one supply module ( 1 ) and a reactor housing ( 12 ) of the process unit ( 2 ) a common maintenance space ( 6 ) is arranged. Device according to claim 1 or in particular according thereto, characterized in that one or more maintenance clearances ( 6 ) each have a horizontal maintenance floor surface ( 5 ) and vertically extending, to the maintenance space ( 6 ) adjacent housing walls of the associated process unit ( 2 ) and the associated supply module ( 1 ) Maintenance openings ( 15 . 16 . 17 ) which are substantially opposite one another. Device according to one or more of the preceding claims or in particular according thereto, characterized in that the loading / unloading interface ( 22 ) via a lock chamber ( 18 ) with the transfer module ( 7 ) and / or the transfer module ( 7 ) via a transfer opening ( 20 ) with a memory module ( 8th ), in which substrate holders equipped with substrates to be coated and / or coated are temporarily storable. Device according to one or more of the preceding claims or in particular according thereto, characterized in that on two opposite sides of the transfer module ( 7 ) two reactor housings ( 12 ), each having a maintenance space ( 6 ), each maintenance space ( 6 ) to a section of a supply module ( 1 ) adjoins. Device according to one or more of the preceding claims or in particular according thereto, characterized in that the loading / unloading interface ( 22 ) and the memory module ( 8th ) are opposite. Device according to one or more of the preceding claims or in particular according thereto, characterized by one or more vacuum devices ( 13 ) to the process chamber ( 4 ), the transfer module ( 7 ) and the memory module ( 8th ) to evacuate, with the transfer module ( 7 ), the memory module ( 8th ) and the process chambers ( 4 ) with opened transfer openings ( 20 ) form a common vacuum volume associated with the loading / unloading interface ( 22 ) over the lock ( 18 ) connected is. Device according to one or more of the preceding claims or in particular according thereto, characterized in that the process unit ( 2 ) via a pipeline ( 11 . 14 ) and optionally an electrical line to the control or energy supply receiving connecting channel ( 3 ) is interconnected. Device according to one or more of the preceding claims or in particular according thereto, characterized in that the connecting channel ( 3 ) at a vertical height above the maintenance floor surface ( 5 ) or at a vertical distance in particular greater than a man height above the maintenance floor surface ( 5 ) is arranged. Device according to one or more of the preceding claims or in particular according thereto, characterized in that the connecting channel ( 3 ) the maintenance space ( 6 ), whereby a maintenance access ( 17 ) of the process unit ( 2 ) and a maintenance access ( 15 . 16 ) of the supply unit ( 1 ) are opposite. Device according to one or more of the preceding claims or in particular according thereto, characterized in that the memory module ( 8th ) for maintenance purposes by the transfer module ( 7 ) is separable.

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