DE102011002539A1 - Method for applying solder bumps on contacting surface of e.g. wafer to produce wafer level package, involves spraying solder paste portions on pads by jet printing process, and melting portions to solder bumps in nitrogen atmosphere - Google Patents

Method for applying solder bumps on contacting surface of e.g. wafer to produce wafer level package, involves spraying solder paste portions on pads by jet printing process, and melting portions to solder bumps in nitrogen atmosphere Download PDF

Info

Publication number
DE102011002539A1
DE102011002539A1 DE201110002539 DE102011002539A DE102011002539A1 DE 102011002539 A1 DE102011002539 A1 DE 102011002539A1 DE 201110002539 DE201110002539 DE 201110002539 DE 102011002539 A DE102011002539 A DE 102011002539A DE 102011002539 A1 DE102011002539 A1 DE 102011002539A1
Authority
DE
Germany
Prior art keywords
wafer
solder
solder bumps
solder paste
pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE201110002539
Other languages
German (de)
Inventor
Stefan Geyer
Bernd Grünler
Andreas Heft
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JENAER LEITERPLATTEN GmbH
Innovent eV Technologieentwicklung
Original Assignee
JENAER LEITERPLATTEN GmbH
Innovent eV Technologieentwicklung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JENAER LEITERPLATTEN GmbH, Innovent eV Technologieentwicklung filed Critical JENAER LEITERPLATTEN GmbH
Priority to DE201110002539 priority Critical patent/DE102011002539A1/en
Publication of DE102011002539A1 publication Critical patent/DE102011002539A1/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1131—Manufacturing methods by local deposition of the material of the bump connector in liquid form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
    • H01L2224/11849—Reflowing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13005—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13005—Structure
    • H01L2224/13007—Bump connector smaller than the underlying bonding area, e.g. than the under bump metallisation [UBM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/742—Apparatus for manufacturing bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

Abstract

The method involves spraying solder paste portions (3) on solder pads (4) by a jet printing process. The solder paste portions are melted to solder bumps in nitrogen atmosphere, where the solder bumps exhibits diameter of 0.3 mm. Movement of a wafer (1) or reconfigured wafer is produced on a circular path around a center of rotation via centrifuge. The wafer is warmed at temperature of about 25 degree, during movement of the wafer. Solder bumps are protruded from a contact surface (2) of the wafer in a perpendicular manner.

Description

Die Erfindung betrifft ein Verfahren zum Aufbringen von Lothügeln auf eine mit Lötpads versehene Kontaktierungsoberfläche eines Wafers für Wafer Level Packages oder eines rekonfigurierten Wafers für Embedded Wafer Level Packages.The invention relates to a method for applying solder bumps to a solder pads contacting surface of a wafer for Wafer Level Packages or a reconfigured wafer for embedded wafer level packages.

Wafer oder rekonfigurierte Wafer werden häufig auf einer Kontaktierungsseite mit Lothügeln zur elektrischen Kontaktierung von auf ihnen aufgebrachten elektronischen Bauelementen versehen, wobei die Lothügel beispielsweise als Kugelgitter (Ball Grid Array) angeordnet werden.Wafers or reconfigured wafers are often provided on a contacting side with solder bumps for making electrical contact with electronic components applied to them, the solder bumps being arranged, for example, as a ball grid array.

Es sind bereits verschiedene Verfahren bekannt, um Wafer und rekonfigurierte Wafer mit Lothügeln auszurüsten. Man kann beispielsweise

  • – durch eine metallische Schablone Lotpaste auftragen und diese dann zu Lothügeln aufschmelzen,
  • – durch eine Photolackschablone Lotpaste auftragen, diese dann zu Lothügeln aufschmelzen und anschließend den Lack entfernen,
  • – eine Lotlegierung galvanisch auf Lötpads abscheiden und diese anschließend zu Lothügeln aufschmelzen,
  • – eine Lotlegierung durch eine Schablone aufdampfen und diese anschließend zu Lothügeln aufschmelzen,
  • – vorgeformte Lotkugeln (Preformed Solder Balls) mit einer Schablone auf die Waferpads aufbringen und diese dann zu Lothügeln aufschmelzen,
  • – vorgeformte Lotkugeln mit einer Kapillare auf die Waferpads aufbringen und diese dann mit einem Laser zu Lothügeln aufschmelzen, oder
  • – vorgeformte Lotkugeln mit einem schablonenartigen Transfer-Chuck ansaugen, auf Lötpads absetzen und dann zu Lothügeln aufschmelzen.
Various methods are already known for providing wafers and reconfigured wafers with solder bumps. You can, for example
  • - apply solder paste through a metallic stencil and then melt it into solder bumps,
  • - Apply solder paste through a photoresist template, then melt to solder holes and then remove the paint,
  • - Electrode a solder alloy galvanically on solder pads and then melt them to solder bumps,
  • - evaporate a solder alloy through a stencil and then melt it into solder bumps,
  • - Apply preformed solder balls (Preformed Solder Balls) to the wafer pads with a template and then melt them into solder bumps.
  • - Apply pre-formed solder balls with a capillary to the wafer pads and then melt them with a laser to solder bumps, or
  • - suck in preformed solder balls with a stencil-like transfer chuck, place on soldering pads and then melt into solder bumps.

Der Erfindung liegt die Aufgabe zu Grunde, ein verbessertes Verfahren zum Aufbringen von Lothügeln auf Wafer und rekonfigurierte Wafer anzugeben.The invention is based on the object of specifying an improved method for applying solder bumps to wafers and reconfigured wafers.

Die Aufgabe wird erfindungsgemäß durch die Merkmale des Anspruchs 1 gelöst.The object is achieved by the features of claim 1.

Vorteilhafte Ausgestaltungen der Erfindung sind Gegenstand der Unteransprüche.Advantageous embodiments of the invention are the subject of the dependent claims.

Bei dem erfindungsgemäßen Verfahren werden Lothügel auf eine mit Lötpads versehene Kontaktierungsoberfläche eines Wafers für Wafer Level Packages oder eines rekonfigurierten Wafers für Embedded Wafer Level Packages aufgebracht, indem Lotpasteportionen auf Lötpads gespritzt and anschließend zu Lothügeln aufgeschmolzen werden.In the method according to the invention, solder bumps are applied to a solder pads contacting surface of a wafer for Wafer Level Packages or a reconfigured wafer for embedded wafer level packages by sprayed solder paste portions on solder pads and then melted to solder bumps.

Verglichen mit aus dem Stand der Technik bekannten Verfahren hat das erfindungsgemäße Verfahren vor allem den Vorteil, einfacher und kostengünstiger zu sein und trotzdem qualitativ hochwertige Lothügel auf Wafern und rekonfigurierten Wafern zu erzeugen. Insbesondere werden bei dem erfindungsgemäßen Verfahren keine vorgeformten Lotkugeln benötigt oder verwendet, die je nach Lothügelgröße und bezogen auf die Lotmasse um einen Faktor 10 bis 50 teurer als die verwendete Lotpaste sind. Außerdem sind kein zusätzliches Flussmittel und kein zusätzliches Flussmittelauftragen wie bei Verfahren, bei denen vorgeformte Lotkugeln verwendet werden, nötig, da Lotpaste bereits Flussmittel enthält. Weiterhin entstehen bei dem erfindungsgemäßen Verfahren keine Kosten für eine Schablonenbeschaffung, Schablonenlagerhaltung und Schablonenreinigung wie bei Verfahren, bei denen Schablonen verwendet werden. Außerdem entstehen keine Lotpasteverluste und keine Lotpasteabfälle wie bei Schablonen verwendenden Verfahren.Compared with methods known from the prior art, the method according to the invention has the particular advantage of being simpler and less expensive and still producing high-quality solder bumps on wafers and reconfigured wafers. In particular, no preformed solder balls are needed or used in the inventive method, which are more expensive depending on the Lothügelgröße and based on the solder mass by a factor of 10 to 50 than the solder paste used. In addition, no additional flux and flux is required, as in processes using preformed solder balls, since solder paste already contains flux. Furthermore, in the method according to the invention, there are no costs for stencil procurement, stencil storage and stencil cleaning, as in the case of stencil-use methods. In addition, there are no loss of solder paste and solder paste waste, as in stencil-using methods.

Vorzugsweise werden die Lotpasteportionen mittels eines Jet-Printing-Verfahrens auf Lötpads gespritzt. Unter einem Jet-Printing-Verfahren zum Aufspritzen von Lotpaste wird dabei ein Verfahren verstanden, bei dem Lotpaste mittels eines Lotpastendruckers in mit dem Aufspritzen von Tinte mittels eines Tintenstrahldruckers vergleichbarer Weise aufgespritzt wird. Derartige Verfahren werden bereits für den schablonenfreien Lotpastenauftrag auf Leiterplatten verwendet und werden hier vorteilhaft auch für den schablonenfreien Lotpastenauftrag auf Lötpads von Wafern und rekonfigurierten Wafern vorgeschlagen.The solder paste portions are preferably sprayed onto soldering pads by means of a jet printing method. A jet printing method for spraying solder paste is understood to mean a method in which solder paste is sprayed by means of a solder paste printer in a manner comparable with the spraying of ink by means of an ink jet printer. Such methods are already used for stencil-free solder paste application on printed circuit boards and are advantageously proposed here also for stencil-free solder paste application on solder pads of wafers and reconfigured wafers.

Die Lotpasteportionen werden vorzugsweise in einer Stickstoffatmosphäre aufgeschmolzen. Dadurch wird vorteilhaft eine Oxidation von Lotpaste beim Aufschmelzen verhindert.The solder paste portions are preferably melted in a nitrogen atmosphere. This advantageously prevents oxidation of solder paste during melting.

In einer besonders bevorzugten Ausgestaltung des erfindungsgemäßen Verfahrens wird der Wafer oder rekonfigurierte Wafer während des Aufschmelzens der Lotpasteportionen auf einer Kreisbahn um ein Drehzentrum bewegt, wobei die Kontaktierungsoberfläche zu jedem Zeitpunkt wenigstens näherungsweise senkrecht auf einer Geraden durch das Drehzentrum und den Schwerpunkt des Wafers oder rekonfigurierten Wafers steht und auf einer von dem Drehzentrum abgewandten Seite des Wafers oder rekonfigurierten Wafers liegt. Ferner wird die Kreisbewegung mit einer Winkelgeschwindigkeit ausgeführt, die ausreicht, um die Lotpasteportionen durch die an ihnen angreifenden Fliehkräfte zu länglichen Lothügeln zu formen, die wenigstens näherungsweise senkrecht von der Kontaktierungsoberfläche abstehen. Diese Ausgestaltung des Verfahrens ermöglicht die Erzeugung länglich geformter Lothügel, die nach Art von Spitzen oder Zacken von der Kontaktierungsoberfläche abstehen. Derart ausgebildete Lothügel ermöglichen eine besonders hohe Board-Level-Zuverlässigkeit von Wafern und rekonfigurierten Wafern, insbesondere für große auf ihnen angeordnete integrierte Schaltkreise. Daher eignet sich diese Ausgestaltung des Verfahrens insbesondere vorteilhaft für mit großen integrierten Schaltkreisen versehene Wafer und rekonfigurierte Wafer.In a particularly preferred embodiment of the method according to the invention, the wafer or reconfigured wafer is moved on a circular path around a center of rotation during the melting of the solder paste portions, wherein the contacting surface at any time at least approximately perpendicular to a straight line through the center of rotation and the center of gravity of the wafer or reconfigured wafer is located on a side remote from the center of rotation of the wafer or reconfigured wafer. Furthermore, the circular movement is carried out at an angular velocity sufficient to form the solder paste portions by the centrifugal forces acting on them to elongated solder bumps which project at least approximately perpendicularly from the contacting surface. This embodiment of the method enables the production of oblong shaped solder bumps, the type of peaks or prongs of protrude the contacting surface. Thus formed solder bumps allow a particularly high board-level reliability of wafers and reconfigured wafers, especially for large integrated circuits arranged on them. Therefore, this embodiment of the method is particularly advantageous for wafers provided with large integrated circuits and reconfigured wafers.

Die Bewegung des Wafers oder rekonfigurierten Wafers auf der Kreisbahn wird dabei vorzugsweise mittels einer Zentrifuge erzeugt, in die der Wafer oder rekonfigurierte Wafer eingebracht wird. Auf diese Weise können insbesondere vorteilhaft auch mehrere Wafer oder rekonfigurierte Wafer gleichzeitig bearbeitet werden, indem sie entlang einer Kreislinie um das Drehzentrum hintereinander in der Zentrifuge angeordnet werden. Ferner können durch Änderung des Abstands vom Drehzentrum, in dem die Wafer oder rekonfigurierten Wafer in der Zentrifuge angeordnet werden, und/oder der Rotationsgeschwindigkeit der Zentrifuge die auf die Lotpasteportionen wirkenden Fliehkräfte geändert werden und die Länge der entstehenden Lothügel vorteilhaft beeinflusst werden.The movement of the wafer or reconfigured wafer on the circular path is preferably generated by means of a centrifuge, in which the wafer or reconfigured wafer is introduced. In this way, it is particularly advantageous if several wafers or reconfigured wafers can be processed simultaneously by being arranged along a circular line around the center of rotation one behind the other in the centrifuge. Further, by changing the distance from the center of rotation in which the wafers or reconfigured wafers are placed in the centrifuge and / or the rotational speed of the centrifuge, the centrifugal forces acting on the solder paste portions can be changed and the length of the resulting solder bumps advantageously affected.

Ausführungsbeispiele der Erfindung werden im Folgenden anhand von Zeichnungen näher erläutert.Embodiments of the invention are explained in more detail below with reference to drawings.

Darin zeigen:Show:

1 schematisch einen Längsschnitt durch einen mit Lotpasteportionen versehenen Wafer, und 1 schematically a longitudinal section through a provided with Lotpasteportionen wafer, and

2 schematisch in einer Draufsicht die Bewegung eines mit Lotpasteportionen versehenen Wafers auf einer Kreisbahn während des Aufschmelzens der Lotpasteportionen. 2 schematically in plan view, the movement of a provided with Lotpasteportionen wafer on a circular path during the melting of the Lotpasteportionen.

Einander entsprechende Teile sind in allen Figuren mit den gleichen Bezugszeichen versehen.Corresponding parts are provided in all figures with the same reference numerals.

1 zeigt ausschnittsweise und schematisch einen Längsschnitt durch einen kreisförmigen Wafer 1 mit einem Durchmesser von etwa 200 mm. Eine Kontaktierungsoberfläche 2 des Wafers 1 ist mit etwa 100000 Lötpads 4 aus goldbeschichtetem Nickel versehen. Die Lötpads 4 haben jeweils einen Durchmesser von etwa 0,27 mm und einen Passivierungsöffnungsdurchmesser von etwa 0,25 mm. Sie sind jeweils mit wenigstens einem nicht dargestellten elektronischen Bauelement des Wafers 1 elektrisch verbunden und bilden dadurch elektrische Anschlussstellen des Wafers 1. 1 shows a fragmentary and schematic longitudinal section through a circular wafer 1 with a diameter of about 200 mm. A contacting surface 2 of the wafer 1 is with about 100000 solder pads 4 made of gold-plated nickel. The solder pads 4 each have a diameter of about 0.27 mm and a passivation opening diameter of about 0.25 mm. They are each with at least one electronic component, not shown, of the wafer 1 electrically connected and thereby form electrical connection points of the wafer 1 ,

Auf jedes Lötpad 4 wird mittels eines Jet-Printing-Verfahrens eine Lotpasteportion 3 gespritzt. Dazu kann beispielsweise der Drucker „MY 500 Jet Printer” der schwedischen Firma „MYDATA AUTOMATION” verwendet werden. Jedes Lötpad 4 erhält zwei Spritzer mit jeweils etwa 15 Nanolitern Lotpaste. Nach dem Aufspritzen der Lotpasteportionen 3 werden diese zu runden Lothügeln aufgeschmolzen, indem der Wafer 1 in einem Reflow-Durchlaufofen unter einer Stickstoffatmosphäre kurzzeitig auf 250°C erhitzt wird. Anschließend wird der Wafer 1 abgekühlt und aus der Lotpaste ausgetretenes Flussmittel entfernt. Die abgekühlten Lothügel haben einen Durchmesser von etwa 0,3 mm.On every solder pad 4 is a Lotpasteportion by means of a jet printing process 3 injected. For this example, the printer "MY 500 Jet Printer" of the Swedish company "MYDATA AUTOMATION" can be used. Each solder pad 4 receives two splashes, each with about 15 nanoliters of solder paste. After spraying the solder paste portions 3 These are melted to round solder bumps by the wafer 1 is briefly heated to 250 ° C in a continuous reflow oven under a nitrogen atmosphere. Subsequently, the wafer 1 cooled and removed from the solder paste escaped flux. The cooled solder bumps have a diameter of about 0.3 mm.

2 erläutert die besonders bevorzugte Ausgestaltung des erfindungsgemäßen Verfahrens, bei dem ein Wafer 1 während des Aufschmelzens der Lotpasteportionen 3 auf einer Kreisbahn bewegt wird. Der Wafer 1 ist ebenso ausgebildet wie der in 1 dargestellte Wafer 1 und wird wie dieser auf den Lötpads 4 mit Lotpasteportionen 3 bespritzt. 2 explains the particularly preferred embodiment of the method according to the invention, in which a wafer 1 during the melting of the solder paste portions 3 is moved on a circular path. The wafer 1 is as well educated as the one in 1 represented wafers 1 and will be like this on the solder pads 4 with solder paste portions 3 splashing.

Zum Aufschmelzen der Lotpasteportionen 3 wird der Wafer 1 in eine Zentrifuge eingebracht und dort auf einer Kreisbahn um ein Drehzentrum M bewegt, so dass die Kontaktierungsoberfläche 2 wenigstens näherungsweise senkrecht auf der Ebene der Kreisbahn steht und eine an die Kreisbahn tangentiale Richtung enthält. Mit anderen Worten steht die Kontaktierungsoberfläche 2 während der Kreisbewegung zu jedem Zeitpunkt wenigstens näherungsweise senkrecht auf einer Geraden A durch das Drehzentrum M und den Schwerpunkt S des Wafers 1. Ferner wird der Wafer 1 derart in der Zentrifuge angeordnet, dass die Kontaktierungsoberfläche 2 auf einer von dem Drehzentrum M abgewandten Seite des Wafers 1 liegt, so dass auf die Lotpasteportionen 3 während der Kreisbewegung Fliehkräfte wirken, die wenigstens näherungsweise senkrecht von der Kontaktierungsoberfläche 2 weg gerichtet sind. Der Abstand des Schwerpunkts S von dem Drehzentrum M und die Winkelgeschwindigkeit der Kreisbewegung werden derart gewählt, dass die Lotpasteportionen 3 eine Zentrifugalbeschleunigung von etwa 3000 m/s2 erfahren. Ferner erfolgt die Kreisbewegung in einer Stickstoffatmosphäre und während der Kreisbewegung wird der Wafer 1 kurzzeitig auf eine Temperatur von 250°C erwärmt. Durch die Erwärmung werden die Lotpasteportionen 3 bei einer Zentrifugalbeschleunigung von etwa 3000 m/s2 aufgeschmolzen. Dabei werden die Lotpasteportionen 3 durch die an ihnen angreifenden Fliehkräfte zu länglichen Lothügeln geformt, die wenigstens näherungsweise senkrecht von der Kontaktierungsoberfläche 2 abstehen und nach ihrer Abkühlung in dieser länglichen Form erstarren.For melting the solder paste portions 3 becomes the wafer 1 introduced into a centrifuge and moved there on a circular path around a center of rotation M, so that the contacting surface 2 at least approximately perpendicular to the plane of the circular path and contains a tangent to the circular path direction. In other words, the contacting surface is 2 during the circular motion at any time at least approximately perpendicular to a straight line A through the center of rotation M and the center of gravity S of the wafer 1 , Further, the wafer becomes 1 arranged in the centrifuge such that the contacting surface 2 on a side remote from the center of rotation M side of the wafer 1 lies, so on the solder paste portions 3 centrifugal forces act during the circular motion, which are at least approximately perpendicular to the contacting surface 2 are directed away. The distance of the center of gravity S from the center of rotation M and the angular velocity of the circular motion are chosen such that the Lotpasteportionen 3 experience a centrifugal acceleration of about 3000 m / s 2 . Further, the circular motion occurs in a nitrogen atmosphere, and during the circular motion, the wafer becomes 1 briefly heated to a temperature of 250 ° C. By heating, the Lotpasteportionen 3 melted at a centrifugal acceleration of about 3000 m / s 2 . This will be the Lotpasteportionen 3 formed by the centrifugal forces acting on them to elongated solder bumps, at least approximately perpendicularly from the contacting surface 2 stand and solidify after cooling in this elongated form.

BezugszeichenlisteLIST OF REFERENCE NUMBERS

11
Waferwafer
22
Kontaktierungsoberflächebonding
33
LotpasteportionLotpasteportion
44
Lötpadsolder pad
MM
Drehzentrumturning center
SS
Schwerpunktmain emphasis
AA
GeradeJust

Claims (5)

Verfahren zum Aufbringen von Lothügeln auf eine mit Lötpads (4) versehene Kontaktierungsoberfläche (2) eines Wafers (1) für Wafer Level Packages oder eines rekonfigurierten Wafers für Embedded Wafer Level Packages, dadurch gekennzeichnet, dass Lotpasteportionen (3) auf Lötpads (4) gespritzt und anschließend zu Lothügeln aufgeschmolzen werden.Method for applying solder bumps to soldering pads ( 4 ) contacting surface ( 2 ) of a wafer ( 1 ) for wafer level packages or a reconfigured wafer for embedded wafer level packages, characterized in that solder paste portions ( 3 ) on solder pads ( 4 ) and then melted to solder holes. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die Lotpasteportionen (3) mittels eines Jet Printing-Verfahrens auf Lötpads (4) gespritzt werden.Method according to claim 1, characterized in that the solder paste portions ( 3 ) by means of a jet printing process on solder pads ( 4 ) are sprayed. Verfahren nach einem der vorgehenden Ansprüche, dadurch gekennzeichnet, dass die Lotpasteportionen (3) in einer Stickstoffatmosphäre aufgeschmolzen werden.Method according to one of the preceding claims, characterized in that the solder paste portions ( 3 ) are melted in a nitrogen atmosphere. Verfahren nach einem der vorgehenden Ansprüche, dadurch gekennzeichnet, dass der Wafer (1) oder rekonfigurierte Wafer während des Aufschmelzens der Lotpasteportionen (3) auf einer Kreisbahn um ein Drehzentrum (M) bewegt wird, wobei die Kontaktierungsoberfläche (2) zu jedem Zeitpunkt wenigstens näherungsweise senkrecht auf einer Geraden (A) durch das Drehzentrum (M) und den Schwerpunkt (S) des Wafers (1) oder rekonfigurierten Wafers steht und auf einer von dem Drehzentrum (M) abgewandten Seite des Wafers (1) oder rekonfigurierten Wafers liegt, und wobei die Winkelgeschwindigkeit der Kreisbewegung ausreicht, um die Lotpasteportionen (3) durch die an ihnen angreifenden Fliehkräfte zu länglichen Lothügeln zu formen, die wenigstens näherungsweise senkrecht von der Kontaktierungsoberfläche (2) abstehen.Method according to one of the preceding claims, characterized in that the wafer ( 1 ) or reconfigured wafers during the melting of the solder paste portions ( 3 ) is moved on a circular path around a center of rotation (M), wherein the contacting surface ( 2 ) at any time at least approximately perpendicular to a line (A) through the center of rotation (M) and the center of gravity (S) of the wafer ( 1 ) or reconfigured wafer and on a side remote from the center of rotation (M) side of the wafer ( 1 ) or reconfigured wafer, and wherein the angular velocity of the circular motion is sufficient to release the solder paste portions ( 3 ) by the centrifugal forces acting on them to form elongated solder bumps, at least approximately perpendicularly from the contacting surface ( 2 ) stand out. Verfahren nach Anspruch 4, dadurch gekennzeichnet, dass die Bewegung des Wafers (1) oder rekonfigurierten Wafers auf der Kreisbahn mittels einer Zentrifuge erzeugt wird, in die der Wafer (1) oder rekonfigurierte Wafer eingebracht wird.Method according to claim 4, characterized in that the movement of the wafer ( 1 ) or reconfigured wafer is produced on the circular path by means of a centrifuge into which the wafer ( 1 ) or reconfigured wafer is introduced.
DE201110002539 2011-01-11 2011-01-11 Method for applying solder bumps on contacting surface of e.g. wafer to produce wafer level package, involves spraying solder paste portions on pads by jet printing process, and melting portions to solder bumps in nitrogen atmosphere Withdrawn DE102011002539A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE201110002539 DE102011002539A1 (en) 2011-01-11 2011-01-11 Method for applying solder bumps on contacting surface of e.g. wafer to produce wafer level package, involves spraying solder paste portions on pads by jet printing process, and melting portions to solder bumps in nitrogen atmosphere

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201110002539 DE102011002539A1 (en) 2011-01-11 2011-01-11 Method for applying solder bumps on contacting surface of e.g. wafer to produce wafer level package, involves spraying solder paste portions on pads by jet printing process, and melting portions to solder bumps in nitrogen atmosphere

Publications (1)

Publication Number Publication Date
DE102011002539A1 true DE102011002539A1 (en) 2012-07-12

Family

ID=46509608

Family Applications (1)

Application Number Title Priority Date Filing Date
DE201110002539 Withdrawn DE102011002539A1 (en) 2011-01-11 2011-01-11 Method for applying solder bumps on contacting surface of e.g. wafer to produce wafer level package, involves spraying solder paste portions on pads by jet printing process, and melting portions to solder bumps in nitrogen atmosphere

Country Status (1)

Country Link
DE (1) DE102011002539A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020014703A1 (en) * 1997-07-21 2002-02-07 Capote Miguel A. Semiconductor flip-chip package and method for the fabrication thereof
DE102008008513A1 (en) * 2007-02-16 2008-08-21 Infineon Technologies Ag Integrated circuit with conductive hills

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020014703A1 (en) * 1997-07-21 2002-02-07 Capote Miguel A. Semiconductor flip-chip package and method for the fabrication thereof
DE102008008513A1 (en) * 2007-02-16 2008-08-21 Infineon Technologies Ag Integrated circuit with conductive hills

Similar Documents

Publication Publication Date Title
EP2293315B1 (en) Melt-resistant conductor board and method for producing melt resistance
DE3810653C1 (en)
DE102015107724B4 (en) Method for producing a substrate arrangement, substrate arrangement, method for connecting an electronic component to a substrate arrangement and electronic component
DE112004002013T5 (en) Paste for the formation of a link and the link formed from the paste
DE102012007804B4 (en) Process for the technologically optimized execution of lead-free solder connections
EP2862426B1 (en) Method for fabrication of pressure sensors
EP3233345A1 (en) Method for void reduction in solder joints
EP1080615B1 (en) Multiple printed panel for electronics components, and method for constructing bumps, soldering frames, spacers and similar on said multiple printed panel.
DE102013112348A1 (en) Method for repairing a printed circuit board with at least one defective component
EP3276652A2 (en) Method for producing a substrate arrangement with a glue prefixing means, corresponding substrate arrangement, method for connecting an electronic component with a substrate arrangement using a glue prefixing means formed on the electronic component and/or the substrate arrangement and an electronic component bonded with a substrate arrangement
DE102009050743A1 (en) Semiconductor device and manufacturing method
DE2852132A1 (en) METHOD AND DEVICE FOR BULK SOLDERING OF PRINTED CIRCUIT BOARDS EQUIPPED WITH COMPONENTS
DE102011002539A1 (en) Method for applying solder bumps on contacting surface of e.g. wafer to produce wafer level package, involves spraying solder paste portions on pads by jet printing process, and melting portions to solder bumps in nitrogen atmosphere
DE10145420B4 (en) Process for producing a solder joint
DE102004003521B3 (en) Repair soldering head for component replacement with circulation of heat transfer medium used for melting solder for releasing component to be replaced
WO2007056997A1 (en) Method for producing a contact arrangement between a microelectronic component and a supporting substrate as well as component unit produced by said method
DE2728330A1 (en) Fluxless soldering of contacts and/or semiconductor slices - using solder preforms which are aligned in a jig and heated
DE10258081A1 (en) Production of a solder stop arrangement for forming three-dimensional structures on wafers comprises depositing a seed layer on a wafer having a coating made from an organic material which leaves open the tip of the structure
EP0810051B1 (en) Sandwich element and method of manufacturing
WO2004050286A1 (en) Method for the application of solder material, use of a system for laser-aided direct metal deposition and contact surfaces with solder material
DE102016225246B4 (en) Method of manufacturing an electronic component and electronic component
DE10049664C2 (en) Removal and repair of contact bumps (de-bumping)
EP2559061B1 (en) Method for forming solder deposits on protruding contacts of a substrate
DE19853153C1 (en) Contacting a constructional element using solder joint covered with conducting polymer
DE102018201326B4 (en) Contact arrangement, electronic power module and method for producing an electronic power module

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R120 Application withdrawn or ip right abandoned
R120 Application withdrawn or ip right abandoned

Effective date: 20120721