DE102007043181A1 - Optoelectronic component of receiver and transmitter for motor vehicle headlight, has semiconductor body with active zone, which is suitable for production or detection of electromagnetic radiation - Google Patents

Abstract

The optoelectronic component (1) has a semiconductor body (4) with an active zone, which is suitable for production or detection of electromagnetic radiation. The optoelectronic component has a non-planar assembly area (3) of a support (2), on which the semiconductor body is placed in a deformable manner such that a radiation passage side (5) of the semiconductor body has a curvature or a break by the assembly area. A substrate is a glass film or a plastic film.

Description

The The invention relates to an optoelectronic component.

In order to form their emission characteristic, for example for beam focusing or for beam spread, optoelectronic components generally comprise external optical elements or beam-shaping housings. An optoelectronic component with an external optical element for beam shaping, which is suitable to be used in a motor vehicle headlight as a lighting unit, is for example in the document WO 2006/045277 described.

task The invention is an improved optoelectronic device specify.

These The object is achieved by an optoelectronic component having the features of claim 1 and by an optoelectronic device solved with the features of claim 3.

advantageous Embodiments and developments of the optoelectronic Component are in the respective dependent claims specified.

• – einen Halbleiterkörper, der eine aktive Zone aufweist, die zur Erzeugung oder zur Detektion von elektromagnetischer Strahlung geeignet ist, und
• – einen nicht-planen Montagebereich eines Trägers, auf den der Halbleiterkörper derart verformt aufgebracht ist, dass vermittels des Montagebereiches eine Strahlungsdurchtrittsseite des Halbleiterkörpers eine Krümmung oder einen Knick aufweist.

According to one embodiment of the optoelectronic component, this comprises in particular:

• A semiconductor body having an active zone suitable for generating or detecting electromagnetic radiation, and
• A non-planar mounting region of a carrier on which the semiconductor body is applied in such a deformed manner that by means of the mounting region a radiation passage side of the semiconductor body has a curvature or a bend.

For radiation generation, the active zone of the semiconductor body comprises, for example, a conventional pn junction, a double heterostructure, a single quantum well structure or a multiple quantum well structure. Examples of such multiple quantum well structures are, for example, in the documents WO 01/39282 . WO 98/31055 . US 5,831,277 . EP 1017113 and US 5,684,309 described, the disclosure of which is hereby incorporated by reference.

A active zone suitable for generating radiation, as a rule is also suitable, is electromagnetic radiation too detect. In particular, an active zone with a pn junction, the going on in the form of a single quantum well structure or a Multiple quantum well structure can be formed, is for radiation detection suitable. For radiation detection, such is in the stopband its characteristic applied.

The Radiation passage side of the semiconductor body is to provided that electromagnetic radiation through the radiation passage side the Leaves semiconductor body or enters into it. is the active zone is designed to provide electromagnetic radiation generate, so this radiation from the radiation passage area sent. In this case, the radiation passage area is present also referred to as "radiation-emitting front side". By doing Case that the active zone is intended to electromagnetic tables To detect radiation, the electromagnetic to be detected occurs Radiation over the radiation passage area into the semiconductor body.

Of the deformed installation of the semiconductor body on the non-planar Mounting range of the carrier allows, for example, luminous free-form surfaces with a very homogenous emission characteristic to produce, which form largely arbitrary shapes in space. Furthermore, so the emission characteristics of the optoelectronic Component can be adjusted in the desired manner. Thus, a concave in their emission radiation-emitting Front opposite a plane radiation-emitting Front on a beam spread on, as for about Radiation sources is beneficial while a in Direction of radiation convex radiation-emitting front beam focusing as advantageous for projection applications is.

So it is advantageously possible to external optics and / or beam-forming housing partially or completely closed without. Furthermore, a curved radiation-emitting Front opposite a plane radiation-emitting Front usually a raised luminance on.

Around deformed to be applied to the carrier, is the Semiconductor body expediently flexible, that means flexible, educated. After application is however, the semiconductor body in the present embodiment usually fixed in the deformed position. For example the semiconductor body can be deformed on the carrier be glued on.

• – einen flexiblen Halbleiterkörper, mit einer aktiven Zone, die zur Erzeugung oder zur Detektion von elektromagnetischer Strahlung geeignet ist,
• – einen Träger, auf dem der Halbleiterkörper angeordnet ist, und
• – zumindest eine Verstelleinheit, die geeignet ist, die Strahlungsdurchtrittsfläche des Halbleiterkörpers auf gewünschte Art und Weise derart zu verformen, dass diese eine Krümmung oder einen Knick aufweist.

According to another embodiment, the optoelectronic component has the following features:

• A flexible semiconductor body having an active zone suitable for generating or detecting electromagnetic radiation,
• - A support on which the semiconductor body to ordered, and
• - At least one adjustment, which is adapted to deform the radiation passage area of the semiconductor body in a desired manner such that it has a curvature or a kink.

According to this Embodiment is the semiconductor body thus not fixed to the carrier in a rigid position, but it is possible to use the adjustment unit to move such that the radiation passage area can be deformed in a desired manner.

Prefers differs according to both embodiments a radius of curvature of the radiation passage side of the semiconductor body maximum of a radius of curvature of the carrier around the thickness of the semiconductor body.

When Adjustment, for example, a piezoelectric actuator or a micro adjuster be used.

The Using an adjustment unit makes it possible, for example the radiation passage area of the semiconductor body to deform during operation. The radiation passage area For example, it can be deformed in a pulsed manner.

The pulsed deformation of a radiation-emitting front can for example, for the optical transmission of messages be used.

According to one Embodiment is above the radiation passage side of the semiconductor body an optical element arranged such in that the radiation generated or detected by the semiconductor body at least partially passes through the optical element. The optical element is used, for example, the radiation characteristic of the optoelectronic component in the desired manner and set way. Is the optoelectronic device about intended for projection applications or in room light sources to be used, as a rule, beam bundling is sought, while in an optoelectronic device used for Space radiation sources is provided, usually a beam spread should be achieved.

The optical element may, for example, a lens, a composite parabolic concentrator (Compound Parabolic Concentrator, CPC), a composite elliptical concentrator (compound elyptic concentrator, CEC) or a compound hyperbolic concentrator (Compound hyperbolic concentrator, CHC).

includes the optoelectronic component an adjusting unit for deformation the radiation passage area of the semiconductor body, As a rule, the optical element is flexible. For this For example, it may be silicone or silicone.

According to one Embodiment, the semiconductor body has a Thickness between 2 microns and 20 microns, with the limits are included. Particularly preferably, the semiconductor body a thickness between 6 microns and 20 microns, wherein the borders are also included. Such a semiconductor body is usually flexible enough.

The active zone, in particular with one of the above-described radiation-generating or radiation-detecting structures, is usually epitaxial grown and of an epitaxially grown semiconductor layer sequence includes. The semiconductor layer sequence is usually on a growth substrate deposited, the lattice constant of the semiconductor layer sequence is adjusted. Conventional semiconductor bodies include usually the growth substrate with a thickness of several hundred around. Such semiconductor bodies are due to their thickness not flexible.

Around Therefore, to obtain a flexible semiconductor body becomes usually the growth substrate of the semiconductor layer sequence removed or thinned. Preferably, the growth substrate becomes removed or thinned so that it is the semiconductor layer sequence alone no longer sufficiently mechanically supported. A flexible one Semiconductor body with the thickness described above can Therefore, for example, be formed by the semiconductor layer sequence. In particular, the semiconductor body is preferably free of one Growth substrate.

According to one Embodiment, the semiconductor body flexible substrate on. A flexible substrate stabilizes the Semiconductor body mechanically.

According to one In another embodiment, the semiconductor body comprises a substrate responsible for the radiation that acts in the acti Zone is generated or detected, permeable is.

One such substrate is preferably between the active zone and the Radiation passage surface of the semiconductor body arranged. The substrate may, for example, the radiation passage area of the semiconductor body. However, it is also possible that between the substrate and the radiation passage area further elements are arranged, for example coupling-out layers, the structures for improved coupling out of the semiconductor body exhibit.

When flexible substrate that is permeable to the in the active zone generated or detected radiation can For example, a glass sheet or a plastic film used be. A glass sheet usually has a thickness between 10 microns and 500 microns, with the limits included. Especially Preferably, the glass sheet has a thickness of 30 microns.

The Plastic film preferably has a thickness between 10 microns and 500 microns, with the limits included. Particularly preferably, the plastic film is resistant to electromagnetic radiation from the ultraviolet range. When Plastic film can be used, for example, acrylic film.

According to one Embodiment of the optoelectronic component is between the active region of the semiconductor body and a Rear side of the semiconductor body, which faces the radiation passage area lies, a reflective layer arranged. The reflective Layer offers the advantage of moving from the active zone towards Backside ge sent radiation to the radiation passage area to redirect the semiconductor body and so the efficiency of the device to increase. It should be noted at this point that the reflective layer is not necessarily a single layer must act, rather, the reflective layer include several layers.

at the reflective layer may be, for example, a Braggspiegel, a metal layer or a combination of a Metal layer and a TCO layer act.

The TCO layer has a transparent, electrically conductive oxide (transparent conductive oxides, TCO) or consists of such. transparent conductive oxides are usually metal oxides, such as Zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO). In addition to binary metal oxygen compounds include also ternary metal oxygen compounds or mixtures different transparent conductive oxides to the group of TCOs. Furthermore, the TCOs do not necessarily correspond to a stoichiometric Composition and can also be p- and n-doped.

is a TCO layer in combination with a metal layer as a reflective Layer used, the TCO layer is preferably between the semiconductor layer sequence and the metal layer. The TCO layer and the metal layer each preferably have a thickness of several 100 nm.

According to one Embodiment of the optoelectronic component is between the active zone and the back of the semiconductor body a reinforcing layer is arranged. The reinforcing layer is preferably designed flexible. Its task is the semiconductor layer sequence mechanically stabilize. The reinforcing layer can for example, the back of the semiconductor body form. Furthermore, it is also possible that on the reinforcing layer further layers are applied, for example, the electrical contacting of the semiconductor body serve or facilitate the assembly of the semiconductor body such as an adhesive layer.

at the reinforcing layer may be, for example an electroplated layer act. Such a galvanic applied layer preferably has at least one of the following Materials or consists of such: gold, nickel, copper, Aluminum, silver. Preferably, a galvanically applied Reinforcing layer has a thickness between 1 micron and 100 microns, with the limits included.

Farther For example, the reinforcing layer may be a metal foil act. The metal foil preferably has at least one of the following Materials on or consists of such: molybdenum, Tantalum. The metal foil is preferably not thicker than 50 microns. Particularly preferably, the metal foil has a thickness of 20 μm on.

According to one Embodiment has the reinforcing layer Silicon on or consists of silicon. A reinforcing layer, which comprises silicon or consists of silicon is preferably not thicker than 10 μm. She is for example with a lot attached to the semiconductor layer sequence.

According to one Embodiment shows the mounting area of the carrier, on which the semiconductor body is applied, a kon vexe or concave curvature. The accordingly also points the radiation passage side of the semiconductor body is a convex or concave curvature. The terms "convex" and "concave" refer to each other in the present text on the emission direction of the semiconductor body under the Assumption that it is a radiation-generating semiconductor body. However, this does not mean that the respective statements are for one radiation-generating semiconductor are limited. It serves only a clear definition of the curvature.

A convex curvature of the radiation-emitting front side of a radiation-generating semiconductor body is particularly suitable for generating a beam expansion, for example for projection applications. A concave curvature, however, usually leads to a beam bundling for example for lighting applications. A concave curvature of the mounting area further advantageously allows a particularly good dissipation of the heat generated by the semiconductor body during operation.

According to one Embodiment, the mounting area has a kink. In this case also has the radiation passage side of the semiconductor body a kink.

According to one Embodiment is at least the mounting area as a heat sink educated. For this purpose, the mounting area usually has a material with a high thermal conductivity on or consists from such a. Furthermore, the expansion coefficient of the Material of the heat sink preferred to the expansion coefficient adapted to the semiconductor body. Suitable materials for the heat sink are, for example, aluminum oxide and aluminum nitride.

According to one embodiment, the electrical contacts for electrically contacting the active zone of the semiconductor body are mounted on the rear side of the semiconductor body. In this way, the entire radiation passage side of the semiconductor body is available for radiation emission or for radiation detection. A semiconductor body in which the electrical contacts are arranged on the rear side thereof, as well as a method for the production thereof are described, for example, in the document DE 10 2007 022 947 the disclosure of which is hereby incorporated by reference.

alternative it is also possible that for contacting the active Zone an electrical contact on the back of the semiconductor body is arranged while another electrical contact on the radiation passage side of the semiconductor body is arranged. In this case, there is the electrical contact on the radiation passage side preferably within an edge region the radiation passage side.

According to one Another embodiment is over the radiation passage side the semiconductor body is a wavelength converting Layer arranged such that of the semiconductor body generated or detected radiation at least partially through the wavelength converting layer passes through. Especially Preferably, the wavelength-converting layer is on the radiation passage side of the semiconductor body applied. The wavelength converting layer is suitable for radiation a first wavelength, in radiation of a second wavelength convert. In general, the wavelength converting converts Layer the radiation of the first wavelength into radiation a longer wavelength. For wavelength conversion includes the wavelength-converting layer usually a wavelength conversion substance that is transformed into a binder is introduced.

includes the optoelectronic component a semiconductor body which is suitable for electromagnetic radiation of the first wavelength range can emit from the visible blue spectral range, so can by means of a wavelength conversion substance suitable is a part of the blue radiation of the first wavelength range convert into yellow radiation, an optoelectronic device be generated that mixed light of blue radiation of the first Wavelength range and yellow radiation of the second wavelength range sending out. This mixed light preferably has a color locus in white Area of the CIE standard color chart.

A wavelength-converting layer is for example in the document WO 97/50132 The disclosure of which is hereby incorporated by reference.

Of the Wellenlängenkonversionsstoff is for example from the Group selected, formed by the following materials will: Garnets doped with rare earth metals, with metals of the rare earth doped alkaline earth sulfides, with rare metals Earth doped thiogalates, doped with rare earth metals Aluminates, rare earth doped orthosilicates, chlorosilicates doped with rare earth metals, with metals of the rare earth doped alkaline earth silicon nitrides, with metals rare earth doped oxynitrides and rare metals Ground doped aluminum oxynitrides.

Especially preferred as the wavelength conversion substance is a Ce-doped YAG wavelength conversion substance (YAG: Ce) used. YAG: Ce is suitable to blue visible radiation in yellow radiation convert.

According to one Embodiment, the binder is an epoxy resin, a Silicone resin or contains a silicone resin and / or an epoxy resin. In particular, silicone resins are particularly well suited as a binder for a wavelength converting layer too serve, since they are very stable to radiation.

Farther For example, the wavelength-converting layer may be diffuser particles have, for example, are also incorporated in the binder. Diffuser particles can be converted into the wavelength converting Layer are introduced to the emission characteristics of the optoelectronic Improve device.

Next Wavelength conversion materials and diffuser particles can the wavelength-converting layer continues to contain dye pigments exhibit. Dye pigments may, for example, the Task, the color locus of the optoelectronic device adjusted radiation to a desired value.

According to one Embodiment are a plurality of semiconductor bodies arranged on the carrier. Here, the Semiconductor body, for example, deformed on the support be applied or with an adjustment to desired Be deformed way.

Especially Preferably, a plurality of semiconductor bodies are each one concave or convex shaped mounting area so placed on the radiation passage side of each semiconductor body is concave or convex. With a high surface occupancy with radiation-emitting semiconductor bodies can such a luminous surface with almost homogeneous emission characteristics and high luminance can be achieved.

The Semiconductor bodies, for example, electromagnetic Send radiation of different wavelengths and such be arranged that mix their beam cone. In this manner and way, it is possible to use an optoelectronic device to produce the mixed-color, for example, white light sending out. Are the semiconductor bodies with adjusting units provided so that the radiation-emitting front of the semiconductor body deformed can be, it is possible in this embodiment, the color locus of the radiation emitted by the optoelectronic component to change.

Farther can over the radiation passage sides of the semiconductor body a common wavelength converting layer such be arranged that emitted by the semiconductor bodies or detected radiation at least partially through the wavelength converting Layer passes through.

According to one Embodiment, the carrier is at least partially in the manner of a paraboloid of revolution, a cylinder or a Ball formed. In particular, if such a carrier with a plurality of radiation-emitting semiconductor bodies is equipped, can be achieved as a space radiation source become. Particularly preferred is in this embodiment the entire outside of the vehicle predominantly occupied with flexible semiconductor bodies.

According to one Embodiment is the surface of the carrier, on which the semiconductor body is applied, at least partially reflective formed. This may be the surface the carrier, for example, with a metallic reflective layer be provided. The metallic reflective layer can at least have one of the following materials or from at least one of these materials are: aluminum, silver.

According to one Embodiment, the semiconductor body is a LED or a laser diode. In particular, a surface emitting Laser diode (VCSEL) may be used as a semiconductor body.

According to one Another embodiment is the back of the Semiconductor body permeable to the formed in the active zone or detected radiation formed. In this embodiment, the active zone is preferred for generating radiation. Furthermore, the semiconductor body is preferred free from a reflective layer. Particularly preferred the semiconductor body free of elements that in the absorb or reflect radiation generated in the active zone that the electromagnetic radiation the semiconductor body of the active zone to the radiation passage area and goes through to the back largely unhindered and from the radiation passage area and the back side be radiated. Is the semiconductor body at this Embodiment on an assembly area of a carrier Applied, so is the mounting area and the carrier at least in the areas of the radiation of the semiconductor body to be run through, also permeable to the formed by the semiconductor body emitted radiation. In this way, a curved space radiation source be created, which emits radiation from two sides.

One The optoelectronic component described here is in particular suitable to be used as a lighting source in a motor vehicle headlight be. In particular, the embodiment in which the optoelectronic Component comprises an adjustment, is particularly suitable for this purpose, since hereby an active cornering light can be achieved, in which the headlight follows the steering movement.

Furthermore, an optoelectronic component of the type described here is suitable to be used as a receiver or transmitter. In particular, an optoelectronic component whose semiconductor body has a convex radiation passage side-for example because the semiconductor body is mounted on a convex mounting area -has a radiation characteristic with a larger solid angle range than an optoelectronic component whose semiconductor body has a flat radiation-emitting front and is therefore particularly good as a transmitter - but provided with a radiation-detecting semiconductor body, also as a receiver - suitable.

According to one Embodiment is an optoelectronic described here Comprises a component of a receiver or a transmitter, which is preferably suitable for electromagnetic radiation to detect or emit the infrared spectral range. Such a transmitter or receiver can, for example, in a remote control or its counterpart be included.

Further features, advantageous embodiments and advantages of the invention will become apparent from the following in connection with the 1 to 15 described embodiments.

It demonstrate:

1 , a schematic sectional view of an optoelectronic component according to a first exemplary embodiment,

2A to 2D , schematic sectional views of optoelectronic semiconductor bodies according to various embodiments,

3 , a schematic sectional view of an optoelectronic component according to a second exemplary embodiment,

4 , a schematic sectional view of an optoelectronic component according to a third exemplary embodiment,

5 , a schematic sectional view of an optoelectronic component according to a fourth exemplary embodiment,

6 , a schematic sectional view of an optoelectronic component according to a fifth exemplary embodiment,

7 , a schematic sectional view of an optoelectronic component with a plurality of semiconductor bodies according to a sixth exemplary embodiment,

8th FIG. 4 is a schematic sectional view of an optoelectronic component having a plurality of semiconductor bodies according to a seventh exemplary embodiment, FIG.

9 , a schematic sectional view of an optoelectronic component with a plurality of semiconductor bodies according to an eighth exemplary embodiment,

10 , an optoelectronic component according to a further exemplary embodiment with an adjustment unit and an external optical element,

11 , schematic sectional view of an optoelectronic component according to a further exemplary embodiment with a plurality of semiconductor bodies,

12 3 shows a schematic sectional illustration of an optoelectronic component according to an exemplary embodiment with a plurality of semiconductor bodies, a wavelength-converting layer and an external optical element,

13 , schematic, perspective view of a car with a motor vehicle headlamp according to an embodiment,

14A , A schematic perspective view of a television with a receiver according to an embodiment.

14B , A schematic perspective view of a remote control with a transmitter according to an embodiment, and

15 , A schematic sectional view of an optoelectronic component according to a further embodiment.

In The embodiments and figures are the same or like-acting components each with the same reference numerals Mistake. The illustrated elements of the figures are not necessarily to be considered as true to scale. Rather, you can individual components, for example layer thicknesses, for the better Understanding partly exaggeratedly big be.

The optoelectronic component according to the embodiment of the 1 includes a carrier 2 with a non-planning assembly area 3 on which a semiconductor body 4 is applied deformed such that by means of the mounting area 3 a radiation passage side 5 of the semiconductor body 4 has a curvature. The semiconductor body 4 is presently intended to emit electromagnetic radiation during operation. The assembly area 3 of the carrier 2 is present in the emission direction 17 concave, so that the semiconductor body 4 is also concavely deformed and its radiation-emitting front 5 in the direction of radiation 17 has a concave curvature. A radius of curvature R _{T of} the carrier 2 differs from a radius of curvature R _{H of} the radiation-emitting front side 5 in the present case at most about the thickness D _{H of} the semiconductor body 4 , The concave curvature of the radiation-emitting front 5 of the semiconductor body 4 leads to a bundled emission characteristic compared to an optoelectronics rule component with a radiation-emitting semiconductor body 4 with planar radiation-emitting front 5 , The beam is in 1 schematically shown by arrows. An optoelectronic component 1 with beam focusing is particularly suitable for projection applications. Furthermore, an optoelectronic component 1 with a bundled radiation characteristic, for example as a source of illumination for a point radiation source suitable.

In the optoelectronic component 1 of the 1 is on a border area 6 the radiation-emitting front 5 of the semiconductor body 4 an electrical contact point 7 arranged on the for electrical contacting of the semiconductor body 4 a bonding wire 8th is applied. The second electrical contact 9 is present over one of the front 5 opposite back 10 of the semiconductor body 4 generated, for example by means of an electrically conductive connection between the semiconductor body 4 and mounting area 3 , To make an electrically conductive connection between mounting area 3 and semiconductor body 4 can produce, the semiconductor body 4 for example, with an electrically conductive adhesive or a solder on the mounting area 3 of the carrier 2 be upset.

To the semiconductor body 4 deformed on the carrier 2 to be able to apply, it is expediently flexible. Flexible optoelectronic semiconductor body 4 as with the component 1 according to the 1 and can be used in all other exemplary embodiments of optoelectronic components are described below with reference to 2A to 2D described.

The semiconductor body 4 according to the embodiment of the 2A has an epitaxially grown semiconductor layer sequence 11 with a radiation active zone 12 on, that is, the active zone 12 is suitable for generating or detecting electromagnetic radiation. For radiation generation or detection, the active zone comprises 12 of the semiconductor body 4 for example, a conventional pn junction, a double heterostructure, a single quantum well structure, or a multiple quantum well structure. The semiconductor layer sequence 11 has a thickness between 2 microns and 20 microns, with the limits are included. In the semiconductor body 4 it may, for example, be a light emitting diode, a laser diode or a surface emitting laser diode (VCSEL).

Those in the active zone 12 during operation of the semiconductor body 4 generated or detected electromagnetic radiation passes through the radiation passage side 5 of the semiconductor body 4 , On a border area 6 the radiation passage side 5 of the semiconductor body 4 In the present case, a bonding pad is the first electrical contact 7 arranged. On the bondpad is for electrical contacting of the semiconductor body 4 and in particular for electrical contacting of the active zone 12 of the semiconductor body 4 a bonding wire 8th applied.

On the from the radiation passage side 5 remote side of the semiconductor layer sequence 11 is in this case a reflective layer 13 arranged. In the reflective layer 13 it may be, for example, a metallic layer, a Bragg mirror or a TCO layer in combination with a metal layer. The TCO layer has or consists of a transparent, electrically conductive oxide (transparent, conductive oxides, TCO).

transparent conductive oxides are usually metal oxides, such as Zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO). In addition to binary metal oxygen compounds include also ternary metal oxygen compounds or mixtures different transparent conductive oxides to the group of TCOs. Furthermore, the TCOs do not necessarily correspond to a stoichiometric Composition and can also be p- and n-doped.

Is as a reflective layer 13 a TCO layer used in combination with a metal layer, the TCO layer is preferably between the semiconductor layer sequence 11 and the metal layer. The TCO layer and the metal layer preferably have a thickness of several 100 nm.

Is it the reflective layer 13 around a Bragg mirror, this is preferably part of the semiconductor layer sequence 11 and how these have grown epitaxially.

Furthermore, the semiconductor body comprises 4 according to the embodiment of the 2A a reinforcing layer 14 that over the reflective layer 13 is applied and in this case the back 10 of the semiconductor body 4 forms, whose radiation passage side 5 opposite. In the reinforcing layer 14 it may, for example, be an electrodeposited layer or a metal foil. For example, an electrodeposited layer may include or consist of one of the following materials: gold, nickel, copper, aluminum, silver. A galvanically applied reinforcing layer preferably has a thickness of between 1 μm and 100 μm.

Is the reinforcing layer 14 formed by a metal foil, it preferably has one of the following materials or consists of one of these materials: molybdenum, tantalum. The metal foil is further preferred, not thicker than 50 microns formed so that it is flexible. Particularly preferably, the metal foil has a thickness of 20 μm.

Furthermore, the reinforcing layer 14 also have silicon or consist of silicon.

The semiconductor body 4 according to the embodiment of the 2 B is unlike the semiconductor body 4 according to the embodiment of the 2A free from a reinforcing layer 14 , Instead, the back is 10 of the semiconductor body 4 through the reflective layer 13 educated.

The semiconductor body 4 according to the embodiment of the 2C points in contrast to the semiconductor bodies 4 of the 2A and 2 B two electrical contacts 7 . 9 on the back side 10 of the semiconductor body 4 on while the radiation passage side 5 of the semiconductor body 4 is free of electrical contacts.

Also the semiconductor body 4 according to the embodiment of the 2D has two electrical contacts 7 . 9 on his back 10 on while the radiation passage side 5 of the semiconductor body 4 free of electrical contacts 7 . 9 is. In contrast to the semiconductor body 4 according to 2C includes the semiconductor body 4 of the 2D however, a flexible substrate 15 that for in the active zone 12 of the semiconductor body 4 generated or detected electromagnetic radiation is permeable. The substrate 15 in the present case forms the radiation passage side 5 of the semiconductor body 4 out. As a flexible substrate 15 permeable to that of the semiconductor body 4 emitted or detected electromagnetic radiation is formed, for example, a glass sheet or a plastic film is suitable.

The optoelectronic component 1 according to the embodiment of the 3 has like the optoelectronic device 1 according to the embodiment of the 1 a mounting area 3 on, which is concavely curved. In contrast to this embodiment, the mounting area 3 of the present component 1 but also on the side of the semiconductor body 4 educated. Furthermore, the assembly area 3 according to the 3 designed as a heat sink, that is, the mounting area 3 comprises a material which is particularly good at dissipating the heat and further preferably at the coefficient of expansion of the semiconductor body 4 is adjusted. Suitable materials for this purpose are, for example, aluminum oxide and aluminum nitride.

In addition to the choice of material continues to allow the concave curvature of the mounting area 3 as well as the training of the assembly area 3 side of the semiconductor body 4 that heat, in the operation of the semiconductor body 4 in the active zone 12 arises, particularly effective from the semiconductor body 4 can be derived. The heat flow is in 3 schematically indicated by dashed arrows.

The optoelectronic component 1 according to the embodiment of the 4 Unlike the optoelectronic components 1 the embodiments of the 1 and 3 a convex mounting area 3 on. Accordingly, also the radiation passage area 5 of the semiconductor body 4 a convex curvature. Due to the convex curvature of the radiation passage area 5 of the semiconductor body 4 has the optoelectronic component 1 according to the 4 a radiation characteristic with a beam spread, that is, with a larger solid angle with respect to an optoelectronic device 1 with a semiconductor body 4 with a flat front 5 , on. The spread radiation characteristic is in 4 schematically shown by arrows. An optoelectronic component 1 with a spread radiation characteristic is particularly suitable as a transmitter, for example, for radiation from the infrared spectral range. If a radiation-detecting semiconductor body is used instead of a radiation-generating semiconductor body, the optoelectronic semiconductor component is also suitable as a receiver of electromagnetic radiation. A transmitter or receiver for infrared radiation can be used for example in a remote control.

Alternatively, or in addition to at least one curvature, the carrier 2 also have a kink. The optoelectronic component 1 according to 5 points as an assembly area 3 a cuboid, on which the semiconductor body 4 is applied to two adjacent side surfaces such that the radiation passage area 5 of the semiconductor body 4 has a kink.

The surface of the mounting area 3 to which the semiconductor body 4 is applied, may not only have a single curvature or a single bend, but rather form any free-form surface, so that the radiation passage area 5 of the semiconductor body 4 forms any free-form surface.

The optoelectronic component 1 according to the embodiment of the 6 has a mounting area 3 with a free-form surface with two adjoining concave subregions, on which the semiconductor body 4 is applied. Accordingly, also the radiation passage area 5 of the semiconductor body 4 a freeform surface with two adjoining concave subregions on.

The optoelectronic component 1 according to the embodiment of the 7 includes two concave-shaped mounting areas 3 as they are already based 1 have been described. The two assembly areas 3 are side by side on the carrier 2 arranged and each with a semiconductor body 4 provided, which also has a concave curved radiation passage area 5 having.

In contrast to the optoelectronic component 1 according to the 7 includes the optoelectronic component 1 according to the embodiment of the 8th two side by side on the carrier 2 arranged convex mounting areas 3 as already stated by the 4 already described.

In the optoelectronic component 1 according to the embodiment of the 9 is the carrier 2 itself curved - in this case concave - trained. Furthermore, the carrier 2 several juxtaposed convexly curved mounting areas 3 on, on each of which a radiation-generating semiconductor body 4 is applied, which is accordingly also concave curved. Such convexly curved mounting areas 3 were already based on the 4 and 8th already described. The mounting areas 3 are still so close to each other on the carrier 2 arranged, that in each case neigh te radiation-generating semiconductor body 4 almost completely adjoin one another. In this way, the fronts form 5 the semiconductor body 4 a nearly complete radiation-emitting surface with a very homogeneous radiation characteristic.

Due to the curvature of the radiation-emitting front side 5 the semiconductor body 4 has the optoelectronic component 1 a higher luminance than an optoelectronic device 1 with planar semiconductor bodies 4 , To illustrate this situation, are in 9 below the carrier 2 the semiconductor bodies 4 shown schematically in plane geometry. A comparison shows that the semiconductor body 4 arranged side by side to occupy a larger area than would be curved. Because of the semiconductor bodies 4 emitted electromagnetic radiation remains the same, however, is the luminance of the curved arranged semiconductor bodies 4 compared to plan arranged semiconductor bodies 4 elevated. The luminance of the optoelectronic component 1 is in the present embodiment by the concave curvature of the carrier 2 further increased.

Alternatively to the concave curvature of the carrier 2 as they are in 9 is shown, the carrier can 2 also form any other surface in space. So can the carrier 2 For example, be designed as a paraboloid of revolution, cylinder or ball. In combination with almost complete coverage of the wearer 2 with convexly curved radiation-emitting semiconductor bodies 4 , so creates an optoelectronic device 1 that is suitable to serve as a space radiation source with high luminance.

The optoelectronic component 1 according to the embodiment of the 10 has in contrast to the other embodiments, four adjustment units 16 on top of that from the radiation passage area 5 the radiation-generating semiconductor body 4 opposite side of the carrier 2 are arranged. With the help of the adjustment units 16 can the radiation passage side 5 of the semiconductor body 4 be deformed arbitrarily, so that the radiation characteristic of the optoelectronic component 1 can be changed during operation in the desired manner. As an adjustment unit 16 For example, a micro-adjuster or a piezoelectric actuator may be used.

Furthermore, the optoelectronic component 1 with the help of an adjustment unit 16 and with a radiation-generating semiconductor body 4 be operated pulsed to transmit messages.

Above the radiation passage side 5 of the semiconductor body 4 is an optical element 18 arranged, which is also flexible. For this purpose, the optical element 18 a silicone resin or consists of such.

As an optical element 18 In this case, a lens is used. In the optical element 18 however, it may also be a Compound Parabolic Concentrator (CPC), a Compound Elyptic Concentrator (CEC), or a Compound Hyperbolic Concentrator (CHC).

The optoelectronic component 1 according to the embodiment of the 11 has like the optoelectronic device 1 according to 9 a concave curved support 2 on. The carrier 2 includes three convexly curved mounting areas 3 , On the convex curved mounting areas 3 each is a radiation-generating semiconductor body 4 applied according to the curvature of the mounting areas 3 a convex curved radiation-emitting front 5 having. The semiconductor body 4 emit electromagnetic radiation of different wavelengths. The middle semiconductor body 4 emits radiation R from the visible red spectral region, while the one adjacent semiconductor bodies 4 Radiation G from the visible green spectral region and the other adjacent semiconductor body 4 Radiation B emitted from the visible blue spectral range. Due to the curvature of the wearer 2 mixes the colored light RGB of the semiconductor body 4 such that the optoelectronic component 1 Send out light with a color spot in the white area of the CIE standard color chart.

The surface of the carrier 2 is still on the side of the mounting areas 3 reflective formed to the optical properties of the optoelectronic component 1 to improve. For this purpose, the surface has a reflective metallic layer 19 on, for example, one of the following materials or consists of one of these materials: aluminum, silver.

The optoelectronic component 1 according to the embodiment of the 12 has like the optoelectronic device 1 according to the 11 a concave curved support 2 with three convexly curved mounting areas 3 on. In contrast to the embodiment according to the 11 send the semiconductor bodies 4 However, radiation B of the same wavelength, which in the present case comes from the visible blue spectral range. Above the radiation-emitting front 5 the semiconductor body 4 is a common wavelength-converting layer 20 arranged. The wavelength-converting layer 20 is suitable for at least part of the semiconductor bodies 4 emitted visible blue radiation B into visible yellow radiation Y to convert. For this purpose, the wavelength-converting layer comprises 20 a wavelength conversion substance 21 For example, YAG: Ce, which is in a binder 22 is introduced. For the binder 22 it may be, for example, a silicone resin or an epoxy resin.

The wavelength-converting layer 21 converts a part of the semiconductor bodies 4 emitted visible blue radiation B in radiation Y from the visible yellow spectral range, while a portion of the visible blue radiation B, the wavelength-converting layer 20 goes through unconverted. The optoelectronic component 1 emits therefore mixed-colored light with yellow and blue proportions, which causes a white color impression in the viewer. In the direction of radiation 17 following on the wavelength converting layer 20 is still an external optical element 18 , For example, arranged a lens that the emission characteristic of the optoelectronic component 1 further influenced in the desired way.

The car headlight 23 according to the embodiment of the figure comprises one of the optoelectronic components described above 1 which emits visible light from the white area of the CIE standard color chart. The optoelectronic component 1 is in the front of a car behind a disc 24 built-in, which is permeable, for visible light from the white area. In particular, a component 1 in which the radiation-emitting front 5 of the semiconductor body 4 during operation as desired with an adjustment unit 16 can be changed, is suitable in a motor vehicle headlight 23 to be used as a lighting unit. With the aid of such a lighting unit, it is possible, for example, to generate an active cornering light that follows the driver's steering movements.

The television according to the embodiment of 14A comprises an optoelectronic component 1 which is suitable for detecting electromagnetic radiation from the infrared spectral range. In particular, a component 1 with a semiconductor body 4 , which has a convex curved front 5 has, is suitable for this purpose, since it can detect radiation with a particularly large solid angle. Such a device 1 is for example based on the 4 described.

The remote control according to the embodiment according to the 14B also has an optoelectronic component 1 with a semiconductor body 4 with a convex curved radiation-emitting front 5 which is suitable for emitting radiation from the infrared spectral range. Such a device is due to its spread radiation characteristic suitable to cover a particularly large solid angle range and therefore particularly advantageous for remote control.

The optoelectronic component 1 according to the embodiment of the 15 comprises a semiconductor body 4 with an active zone 12 , which is intended for generating radiation. The backside 10 of the semiconductor body 4 is permeable to that of the active zone 12 generated radiation and formed as the radiation passage side 5 provided radiation during operation of the device 1 to send out.

The semiconductor body 4 is still permeable to those of the active zone 12 generated radiation formed. In particular, the semiconductor body 4 free of absorbing or reflecting elements that control the radiation path of the active zone 12 to the back 10 or to the radiation passage side 5 could hinder, such as a reflective layer 13 ,

For mechanical stabilization of the half conductor body 4 is it possible for this to be at least one substrate 15 has (in 15 not shown) that for the of the semiconductor body 4 emitted radiation is permeable, such as a glass sheet or a plastic film. The substrate 15 For example, the radiation passage area 5 or the back 10 of the semiconductor body 4 form. Furthermore, it is also possible that the semiconductor body 4 two substrates 15 that for the of the semiconductor body 4 emitted radiation are permeable. So can a substrate 15 , For example, a plastic film, the radiation passage side 5 and another substrate 15 , for example, also a plastic film, the back 10 of the semiconductor body 4 form. The semiconductor body 4 For example, it can be laminated between two plastic films.

The semiconductor body 4 is on a non-planning assembly area 3 a carrier 2 applied deformed such that the radiation passage side 5 of the semiconductor body 4 has a curvature. The assembly area 3 in the present case has a convex curvature, so that the radiation passage side 5 of the semiconductor body 4 , as well as the back 10 of the semiconductor body 4 also has a convex curvature. The assembly area 3 and the carrier 2 are presently also permeable to those of the semiconductor body 4 emitted radiation is formed, so that the optoelectronic component 1 In operation, radiation from the radiation passage area 5 of the semiconductor body 4 and from the side of the wearer 2 that of the semiconductor body 4 turned away, sent out. In this way, a spatial radiation source can be generated.

The The invention is not by the description based on the embodiments limited. Rather, the invention includes every new feature as well any combination of features, especially any combination includes features in the claims, also if this feature or this combination of features itself is not explicitly in the patent claims or exemplary embodiments is specified.

QUOTES INCLUDE IN THE DESCRIPTION

This list The documents listed by the applicant have been automated generated and is solely for better information recorded by the reader. The list is not part of the German Patent or utility model application. The DPMA takes over no liability for any errors or omissions.

Cited patent literature

• WO 2006/045277 [0002]
• WO 01/39282 [0007]
• WO 98/31055 [0007]
• US 5831277 [0007]
• - EP 1017113 [0007]
• US 5684309 [0007]
• - DE 102007022947 [0042]
• WO 97/50132 [0046]

Claims (39)

Optoelectronic component ( 1 ) comprising: - a semiconductor body ( 4 ), which is an active zone ( 12 ), which is suitable for the generation or detection of electromagnetic radiation, and - a non-planar mounting area ( 3 ) of a carrier ( 2 ) to which the semiconductor body ( 4 ) is applied deformed such that by means of the mounting area ( 3 ) a radiation passage side ( 5 ) of the semiconductor body ( 4 ) has a curvature or a kink. Optoelectronic component ( 1 ) according to claim 1, in which the semiconductor body ( 4 ) is flexible. Optoelectronic component ( 1 ) with: - a flexible semiconductor body ( 4 ), which is an active zone ( 12 ) suitable for generating or detecting electromagnetic radiation, - a carrier ( 2 ), on which the semiconductor body ( 4 ), and - at least one adjustment unit ( 16 ), which is suitable, a radiation passage side ( 5 ) of the semiconductor body ( 4 ) in a desired manner such that it has a curvature or a kink. Optoelectronic component ( 1 ) according to the preceding claim, wherein the adjusting unit ( 16 ) is a piezoelectric actuator or a micro adjuster. Optoelectronic component ( 1 ) according to one of claims 3 to 4, wherein the radiation passage side ( 5 ) of the semiconductor body ( 4 ) is deformable during operation. Optoelectronic component ( 1 ) according to the preceding claim, wherein the radiation passage side ( 5 ) is pulsed deformable. Optoelectronic component ( 1 ) according to one of Claims 4 to 6, in which, above the radiation passage side of the semiconductor body ( 4 ) an optical element ( 15 ) is arranged such that the of the semiconductor body ( 4 ) generated or detected radiation at least partially by the optical element ( 15 ) passes through. Optoelectronic component ( 1 ) according to the preceding claim with reference to one of claims 3 to 6, in which the optical element ( 15 ) is flexible. Optoelectronic component ( 1 ) according to one of claims 2 to 8, in which the semiconductor body ( 4 ) has a thickness of between 2 μm and 20 μm, the limits being included. Optoelectronic component ( 1 ) according to one of the above claims, in which the semiconductor body ( 4 ) a flexible substrate ( 15 ) having. Optoelectronic component ( 1 ) according to one of the above claims, in which the semiconductor body ( 4 ) a substrate ( 15 ), which is suitable for use in the active zone ( 12 ) generated or detected radiation is permeable. Optoelectronic component ( 1 ) according to the preceding claim, wherein the substrate ( 15 ) between the active zone ( 12 ) and the radiation passage side ( 5 ) of the semiconductor body ( 4 ) is arranged. Optoelectronic component ( 1 ) according to one of claims 10 to 12, in which the substrate ( 15 ) is a glass sheet or a plastic film. Optoelectronic component ( 1 ) according to any one of the preceding claims, wherein between the active layer ( 13 ) and a rear side of the semiconductor body, the radiation passage side ( 5 ) is opposite, a reflective layer is arranged. Optoelectronic component ( 1 ) according to the preceding claim, wherein the reflective layer ( 13 ) is formed by a Bragg mirror, a metal layer or a metal layer in combination with a TCO layer. Optoelectronic component ( 1 ) according to any one of the preceding claims, wherein between the active zone ( 12 ) and the back ( 10 ) of the semiconductor body ( 4 ) a reinforcing layer ( 14 ) is arranged. Optoelectronic component ( 1 ) according to the preceding claim, wherein the reinforcing layer ( 14 ) is a plated layer or a metal foil. Optoelectronic component ( 1 ) according to one of claims 16 to 17, in which the reinforcing layer ( 14 ) Comprises silicon. Optoelectronic component ( 1 ) according to any one of the preceding claims, wherein the mounting area ( 3 ) of the carrier ( 2 ) to which the semiconductor body ( 4 ), has a convex or concave curvature. Optoelectronic component ( 11 ) according to any one of the preceding claims, wherein the mounting area ( 3 ) of the carrier ( 2 ) to which the semiconductor body ( 4 ), has a kink. Optoelectronic component ( 1 ) after egg nem of the above claims, wherein at least the mounting area ( 3 ) is designed as a heat sink. Optoelectronic component ( 1 ) according to the preceding claim, wherein the heat sink comprises aluminum oxide or aluminum nitride. Optoelectronic component ( 1 ) according to one of the preceding claims, in which electrical contacts ( 7 . 9 ) for electrically contacting the active zone ( 12 ) on the back side ( 10 ) of the semiconductor body ( 4 ) are mounted. Optoelectronic component ( 1 ) according to one of claims 1 to 22, in which at least one electrical contact ( 7 . 9 ) on a border area ( 6 ) of the radiation passage side ( 5 ) of the semiconductor body ( 4 ) is arranged. Optoelectronic component ( 1 ) according to one of the above claims, wherein above the radiation passage side ( 5 ) of the semiconductor body ( 4 ) a wavelength-converting layer ( 20 ) is arranged such that the radiation generated or detected by the semiconductor body at least partially by the wavelength-converting layer ( 20 ) passes through. Optoelectronic component ( 1 ) according to one of the above claims, in which a plurality of semiconductor bodies ( 4 ) on the support ( 2 ) are arranged. Optoelectronic component ( 1 ) according to the preceding claim, in which the semiconductor bodies ( 4 ) emit electromagnetic radiation (R, G, B) of different wavelengths and are arranged such that their beam cones mix. Optoelectronic component ( 1 ) according to one of claims 26 to 27, in which over the radiation passage sides ( 5 ) the semiconductor body ( 4 ) a common wavelength-converting layer ( 20 ) is arranged such that the of the semiconductor bodies ( 4 ) emitted or detected radiation at least partially through the wavelength-converting layer ( 20 ) passes through. Optoelectronic component ( 1 ) according to any one of the preceding claims, wherein the carrier ( 2 ) is formed at least partially in the manner of a paraboloid of revolution, a cylinder or a sphere. Optoelectronic component ( 1 ) according to one of the preceding claims, in which the surface of the carrier ( 2 ) to which the semiconductor body ( 4 ) is applied, at least partially reflective is formed. Optoelectronic component ( 1 ) according to one of the above claims, in which the semiconductor body ( 4 ) is a light emitting diode or a laser diode. Optoelectronic component ( 1 ) according to the preceding claim, in which the semiconductor body ( 4 ) is a surface emitting laser diode. Optoelectronic component ( 1 ) according to one of the preceding claims, in which the rear side ( 10 ) of the semiconductor body ( 4 ) permeable to those of the active zone ( 12 ) generated or detected radiation is formed. Optoelectronic component ( 1 ) according to the preceding claim, wherein the mounting area ( 3 ) permeable to those in the active zone ( 12 ) generated or detected radiation is formed. Car headlights ( 23 ) with an optoelectronic component ( 1 ) according to one of the above claims. Receiver capable of detecting electromagnetic radiation with an opto-electronic device ( 1 ) according to one of claims 1 to 34. Receiver according to the previous claim, the is suitable electromagnetic radiation from the infrared spectral range to detect. Transmitter which is suitable for emitting electromagnetic radiation, having an optoelectronic component ( 1 ) according to one of claims 1 to 34. Transmitter according to the previous claim, which is suitable is, electromagnetic radiation from the infrared spectral range send out.