DE102006008807A1 - Power semiconductor module and cooling assembly combination for insulated gate bipolar transistor inverter application, has module with frame-like housing, which stays away from outer edge section of main surface of substrate - Google Patents
Power semiconductor module and cooling assembly combination for insulated gate bipolar transistor inverter application, has module with frame-like housing, which stays away from outer edge section of main surface of substrate Download PDFInfo
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- DE102006008807A1 DE102006008807A1 DE102006008807A DE102006008807A DE102006008807A1 DE 102006008807 A1 DE102006008807 A1 DE 102006008807A1 DE 102006008807 A DE102006008807 A DE 102006008807A DE 102006008807 A DE102006008807 A DE 102006008807A DE 102006008807 A1 DE102006008807 A1 DE 102006008807A1
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- power semiconductor
- semiconductor module
- platelet
- housing
- shaped substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
Die Erfindung betrifft eine Anordnung gemäß dem Oberbegriff des Anspruches 1.The The invention relates to an arrangement according to the preamble of the claim 1.
Aus
der
Der Erfindung liegt die Aufgabe zugrunde, eine Anordnung der eingangs genannten Art zu schaffen, die einfach und kompakt aufgebaut und preisgünstig realisierbar ist.Of the Invention is based on the object, an arrangement of the above to create said type, which is simple and compact and inexpensive to implement is.
Diese Aufgabe wird bei einer Anordnung der eingangs genannten Art erfindungsgemäß durch die Merkmale des Kennzeichenteiles des Anspruchs 1 gelöst. Bevorzugte Aus- bzw. Weiterbildungen der erfindungsgemäßen Anordnung sind in den Unteransprüchen gekennzeichnet.These Task is in accordance with the invention in an arrangement of the type mentioned the features of the characterizing part of claim 1 solved. preferred Training or further developments of the arrangement according to the invention are characterized in the subclaims.
Dadurch, dass erfindungsgemäß der Gehäuserahmen vom Außenrandabschnitt der zweiten Hauptfläche des Substrates – und nicht von einer eigenen Grundplatte – weg steht, ergibt sich ein einfacherer und gleichzeitig kompakterer Aufbau der erfindungsgemäßen Anordnung, wobei durch das den vom Gehäuserahmen umschlossenen Innenraum zumindest größtenteils ausfüllende erstarrte Isoliermaterial optimale Isolationseigenschaften erreicht werden. Bei den Anschlusselementen für die Last- und Hilfskontakte handelt es sich in vorteilhafter Weise um formstabile steife dünne Stifte, deren Anschaffungskosten im Vergleich zu Federkontakten gering sind und deren Handhabung bei der Herstellung des Leistungshalbleitermoduls vergleichsweise einfach ist.Thereby, according to the invention, the housing frame from the outer edge section the second major surface of the substrate - and not from its own base plate - is gone, it results simpler and more compact design of the arrangement according to the invention, whereby by that from the housing frame enclosed interior at least largely filling solidified Insulation material optimum insulation properties can be achieved. For the connection elements for the load and auxiliary contacts are in an advantageous manner around dimensionally stable stiff thin Pens, their cost compared to spring contacts are low and their handling in the production of the power semiconductor module comparatively easy.
Weitere Vorteile der erfindungsgemäßen Anordnung mit einem Leistungshalbleitermodul und einem Kühlbauteil bestehen in ihren relativ geringen Spannungsverlusten und optimalen Schalteigenschaften. Die erfindungsgemäße Anordnung findet beispielsweise als IGBT-Inverter und/oder -Konverter Anwendung.Further Advantages of the arrangement according to the invention with a power semiconductor module and a cooling component exist in their relatively low voltage losses and optimum switching properties. The inventive arrangement For example, it is used as an IGBT inverter and / or converter.
Das plättchenförmige Substrat kann eine mindestens annähernd quadratische Grundfläche und der Gehäuserahmen kann daran angepasste Grundflächenabmessungen aufweisen. Selbstverständlich ist es auch möglich, dass das plättchenförmige Substrat eine rechteckige Grundfläche und der Gehäuserahmen daran angepasste Grundflächenabmessungen aufweist.The platelet-shaped substrate can be at least approximate square base and the case frame can adapt base surface dimensions to it exhibit. Of course it is also possible that the platelet-shaped substrate a rectangular base and the case frame adapted footprint dimensions having.
Als zweckmässig hat es erwiesen, wenn der Gehäuserahmen mit Durchgangslöchern ausgebildet ist, durch die sich die Anschlusselemente für die Last- und Hilfskontakte hindurch erstrecken. Zu diesem Zwecke kann der Gehäuserahmen durchgehend mit Durchgangslöchern ausgebildet sein. Zweckmässig kann es jedoch sein, wenn der Gehäuserahmen einen nach innen gerichteten Bund aufweist, der mit den Durchgangslöchern ausgebildet ist, durch die sich die Anschlusselemente für die Last- und Hilfskontakte hindurch erstrecken. Dieser Bund des Gehäuserahmens kann umlaufend oder mit Unterbrechungen ausgebildet sein. Der Bund kann sich in Höhenrichtung des Gehäuserahmens auf einer beliebigen Höhe befinden. Zweckmässig kann es jedoch sein, wenn der nach innen gerichtete Bund an dem vom plättchenförmigen Substrat abgewandten Außenrand des Gehäuserahmens ausgebildet ist.When expedient it has proven, if the case frame with through holes is formed, through which the connecting elements for the load and extend auxiliary contacts therethrough. For this purpose, the housing frame throughout with through holes be educated. expedient However, it may be if the case frame is an inside directed collar formed with the through-holes, through which the connection elements for the load and auxiliary contacts extend through. This collar of the housing frame can be circumferential or with Be formed interruptions. The federal government can be in the height direction of the rack any height are located. Appropriately However, it may be when the inwardly directed collar on the plate-shaped substrate opposite outer edge of the case frame is trained.
Bevorzugt ist es, wenn der Gehäuserahmen an seiner vom plättchenförmigen Substrat abgewandten Stirnfläche mit Abstandselementen für eine Leiterplatte ausgebildet ist, die gleich lang oder kürzer sind als die aus dem Gehäuserahmen vorstehenden Kontaktabschnitte der Anschlusselemente für die Last- und Hilfskontakte. Auf den Abstandselementen kann die genannte Leiterplatte angeordnet werden, wobei sich die aus dem Gehäuserahmen vorstehenden Kontaktabschnitte der Anschlusselemente für die Last- und Hilfskontakte in Durchgangslöcher der Leiterplatte hinein bzw. durch diese hindurch erstrecken können und mit der Schaltungsstruktur der Leiterplatte beispielsweise durch eine Verlötung kontaktiert werden können. Diese Verlötung kann in an sich bekannter Weise mit Hilfe eines Lötbades erfolgen. Es ist jedoch auch möglich, die Leiterplatte ohne Durchgangslöcher auszubilden, wenn die Abstandselemente des Gehäuserahmens und der Kontaktabschnitt der Anschlusselement gleich lang sind.Prefers is it when the case frame its from the platelet-shaped substrate opposite end face with spacers for a circuit board is formed, which are the same length or shorter than the ones out of the case frame protruding contact portions of the connection elements for the load and auxiliary contacts. On the spacer elements, said circuit board are arranged, wherein the out of the housing frame protruding contact portions the connection elements for the load and auxiliary contacts into through holes of the PCB inside or extend therethrough and with the circuit structure the circuit board can be contacted for example by soldering. These soldering can be done in a conventional manner with the help of a solder bath. However, it is also possible form the circuit board without through holes when the Spacer elements of the housing frame and the contact portion of the connecting element are the same length.
Die Abstandselemente für die Leiterplatte sind vorzugsweise an den Ecken des Gehäuserahmens ausgebildet.The Spacer elements for the circuit board are preferably at the corners of the housing frame educated.
Erfindungsgemäß ist es möglich, dass das plättchenförmige Substrat mit seiner wärmeableitenden Metallschicht mittels einer Wärmeleitkleberschicht mit einem Kühlkörper verbindbar oder verbunden ist. Dabei kommt beispielsweise eine wärmeleitender Kleber mit einer Wärmeleitfähigkeit von ≥ 2,2 W/mK zur Anwendung.It is according to the invention possible, that the platelet-shaped substrate with its heat-dissipating Metal layer by means of a Wärmeleitkleberschicht connectable with a heat sink or connected. In this case, for example, comes a thermally conductive Adhesive with a thermal conductivity of ≥ 2.2 W / mK for use.
Bevorzugt ist es, wenn das plättchenförmige Substrat mit seiner wärmeableitenden Metallschicht mittels des Druckkörpers gegen das Kühlbauteil gepresst ist, wobei der Druckkörper an der vom plättchenförmigen Substrat abgewandten Stirnfläche des Gehäuserahmens anliegt und auf gegenüberliegenden Seiten Ansätze aufweist, die mit Durchgangslöchern für Befestigungselemente ausgebildet sind, mittels welchen der Druckkörper und mit diesem das Leistungshalbleitermodul an dem Kühlbauteil befestigt ist. Bei den besagten Befestigungselementen kann es sich um Gewindestifte bzw. Schrauben handeln, die in Gewindebohrungen einschraubbar sind, die im Kühlkörper ausgebildet sind.It is preferred if the platelet-shaped substrate with its heat-dissipating metal layer is pressed against the cooling member by means of the pressure body, wherein the pressure body rests against the plate-shaped substrate facing away from the end face of the housing frame and on opposite sides has approaches that are formed with through holes for fasteners, by means of which the pressure body and with this the power semiconductor module attached to the cooling component is. In the said fasteners may be threaded pins or screws, which are screwed into threaded bores, which are formed in the heat sink.
Der Druckkörper kann mit Durchgangslöchern für Last- und Hilfs-Kontakt-Anschlusselemente ausgebildet sein.Of the pressure vessels can with through holes for load and auxiliary contact terminals formed be.
Desgleichen ist es möglich, dass die erfindungsgemäße Anordnung mit dem Leistungshalbleitermodul und dem Kühlbauteil mit einem Miniatur-Ventilator zu einem gekühlten Modulsystem kombiniert ist.Similarly Is it possible, that the inventive arrangement with the power semiconductor module and the cooling component with a miniature fan to a chilled Module system is combined.
Weitere Einzelheiten, Merkmale und Vorteile ergeben sich aus der nachfolgenden Beschreibung zweier in der Zeichnung vergrössert und nicht maßstabsgetreu verdeutlichter Ausführungsbeispiele des erfindungsgemäßen Leistungshalbleitermoduls – in Kombination mit einem abschnittweise gezeichneten Kühlbauteil bzw. Kühlkörper und einer ebenfalls nur abschnittweise verdeutlichten Leiterplatte.Further Details, features and advantages will be apparent from the following Description of two in the drawing enlarged and not to scale illustrated embodiments of the power semiconductor module according to the invention - in combination with a partially drawn cooling component or heat sink and a likewise only partially clarified circuit board.
Es zeigen:It demonstrate:
Das
Leistungshalbleitermodul
Die
Leiterbahnstruktur
Anschlusselemente
Vom
Außenrandabschnitt
Der
vom Gehäuserahmen
Wie
aus
Gemäß
Bei
der in
Wie
aus
Gleiche
Einzelheiten sind in den
- 1010
- LeistungshalbleitermodulThe power semiconductor module
- 1212
- Leiterplattecircuit board
- 1414
- Kühlbauteilcooling component
- 1616
-
plättchenförmiges Substrat
(von
10 )platelet-shaped substrate (from10 ) - 1818
-
erste
Hauptfläche
(von
16 )first main surface (from16 ) - 2020
-
zweite
Hauptfläche
(von
16 )second main surface (from16 ) - 2222
-
Metallschicht
(an
18 )Metal layer (on18 ) - 2424
-
Leiterbahnstruktur
(an
20 für26 )Track structure (at20 For26 ) - 2626
-
Leistungshalbleiter-Bauelemente
(von
10 an24 )Power semiconductor devices (from10 at24 ) - 2828
-
Bonddrähte (zwischen
26 und24 )Bonding wires (between26 and24 ) - 3030
-
Anschlusselemente
(von
10 für12 )Connection elements (from10 For12 ) - 3232
-
Stifte
(von
30 )Pins (from30 ) - 3434
-
Außenrandabschnitt
(von
20 bzw.16 )Outer edge section (from20 respectively.16 ) - 3636
-
Gehäuserahmen
(von
10 an34 )Case frame (from10 at34 ) - 3838
-
Bund
(von
36 )Covenant (from36 ) - 4040
-
Durchgangslöcher (in
38 )Through holes (in38 ) - 4242
-
Kontaktabschnitte
(von
30 für12 )Contact sections (from30 For12 ) - 4444
-
Stirnfläche (von
36 )End face (from36 ) - 4646
-
Abstandselemente
(an
44 für12 )Spacer elements (at44 For12 ) - 4848
-
Innenraum
(von
36 )Interior (from36 ) - 5050
-
Isoliermaterial
(in
48 )Insulating material (in48 ) - 5252
-
Ecken
(von
36 )Corners (from36 ) - 5454
-
Wärmeleitkleberschicht
(zwischen
22 und14 )Wärmeleitkleberschicht (between22 and14 ) - 5656
-
Druckkörper (für
10 )Pressure body (for10 ) - 5858
-
gegenüberliegende
Seiten (von
56 )opposite sides (from56 ) - 6060
-
Ansatz
(an
58 )Approach (on58 ) - 6262
-
Durchgangsloch
(in
60 für64 )Through hole (in60 For64 ) - 6464
-
Befestigungselement
(für
56 an14 )Fastening element (for56 at14 ) - 6666
-
Gewindebohrung
(in
14 für64 )Threaded hole (in14 For64 ) - 6868
-
Längsseiten
(von
56 )Long sides (from56 ) - 7070
-
Durchgangslöcher (in
56 für30 )Through holes (in56 For30 )
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006008807A DE102006008807B4 (en) | 2006-02-25 | 2006-02-25 | Arrangement with a power semiconductor module and a cooling component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006008807A DE102006008807B4 (en) | 2006-02-25 | 2006-02-25 | Arrangement with a power semiconductor module and a cooling component |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102006008807A1 true DE102006008807A1 (en) | 2007-09-06 |
DE102006008807B4 DE102006008807B4 (en) | 2010-10-14 |
Family
ID=38329067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102006008807A Expired - Fee Related DE102006008807B4 (en) | 2006-02-25 | 2006-02-25 | Arrangement with a power semiconductor module and a cooling component |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102006008807B4 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008034148A1 (en) * | 2008-07-22 | 2010-02-04 | Infineon Technologies Ag | Power semiconductor modular system, has power semiconductor module pressed on contact area of heat sink by tensioning cross bar, where semiconductor module is connected to heat sink and tensioning cross bar |
DE102008048005B3 (en) * | 2008-09-19 | 2010-04-08 | Infineon Technologies Ag | Power semiconductor module arrangement and method for producing a power semiconductor module arrangement |
EP2146373A3 (en) * | 2008-07-19 | 2011-05-04 | Semikron Elektronik GmbH & Co. KG Patentabteilung | Assembly with a semiconductor module and production method for same |
DE202014100922U1 (en) * | 2013-07-26 | 2014-10-28 | Itz Innovations- Und Technologiezentrum Gmbh | Stripper plate |
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US9305874B2 (en) | 2014-04-13 | 2016-04-05 | Infineon Technologies Ag | Baseplate for an electronic module and method of manufacturing the same |
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EP2146373A3 (en) * | 2008-07-19 | 2011-05-04 | Semikron Elektronik GmbH & Co. KG Patentabteilung | Assembly with a semiconductor module and production method for same |
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DE102008034148A1 (en) * | 2008-07-22 | 2010-02-04 | Infineon Technologies Ag | Power semiconductor modular system, has power semiconductor module pressed on contact area of heat sink by tensioning cross bar, where semiconductor module is connected to heat sink and tensioning cross bar |
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US10109544B2 (en) | 2014-04-13 | 2018-10-23 | Infineon Technologies Ag | Baseplate for an electronic module |
US9305874B2 (en) | 2014-04-13 | 2016-04-05 | Infineon Technologies Ag | Baseplate for an electronic module and method of manufacturing the same |
US9716018B2 (en) | 2014-04-13 | 2017-07-25 | Infineon Technologies Ag | Method of manufacturing baseplate for an electronic module |
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DE102015221062A1 (en) * | 2015-10-28 | 2017-05-04 | Vincotech Gmbh | SEMICONDUCTOR CIRCUIT ARRANGEMENT WITH PRESSED GEL AND ASSEMBLY METHOD |
CN107017207B (en) * | 2015-10-28 | 2019-11-15 | 文科泰克(德国)有限责任公司 | Semiconductor circuit arragement construction and assembly method with compression gel |
DE102015221062B4 (en) | 2015-10-28 | 2020-04-23 | Vincotech Gmbh | SEMICONDUCTOR CIRCUIT ARRANGEMENT WITH PRESSED GEL AND ASSEMBLY METHOD |
DE102016223477A1 (en) * | 2016-11-25 | 2018-05-30 | Bayerische Motoren Werke Aktiengesellschaft | Circuit arrangement with power transistor and method for mounting a power transistor |
CN108231706A (en) * | 2017-12-27 | 2018-06-29 | 全球能源互联网研究院有限公司 | A kind of encapsulating structure of power semiconductor part and packaging method |
CN108231706B (en) * | 2017-12-27 | 2020-12-29 | 全球能源互联网研究院有限公司 | Power semiconductor device packaging structure and packaging method |
EP3929973A1 (en) * | 2020-06-22 | 2021-12-29 | Infineon Technologies AG | A power semiconductor module and a method for producing a power semiconductor module |
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