DE102004059389A1 - Semiconductor device has semiconductor body with contact area and connection element with other contact area whereby both contact areas are vertically distant from each other - Google Patents
Semiconductor device has semiconductor body with contact area and connection element with other contact area whereby both contact areas are vertically distant from each other Download PDFInfo
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- DE102004059389A1 DE102004059389A1 DE102004059389A DE102004059389A DE102004059389A1 DE 102004059389 A1 DE102004059389 A1 DE 102004059389A1 DE 102004059389 A DE102004059389 A DE 102004059389A DE 102004059389 A DE102004059389 A DE 102004059389A DE 102004059389 A1 DE102004059389 A1 DE 102004059389A1
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Abstract
Description
Die Erfindung betrifft die Kontaktierung eines Halbleiterbauelements. Halbleiterbauelemente enthalten typischer Weise einen oder mehrere Halbleiterkörper, die an bestimmten Bereichen Ihrer Oberfläche elektrisch leitend mit einem Anschlusselement kontaktiert sind. Solche Anschlusselemente sind aus Gründen der elektrischen Leitfähigkeit überwiegend aus Metallen wie zum Beispiel Aluminium oder Kupfer gebildet.The The invention relates to the contacting of a semiconductor device. Semiconductor devices typically include one or more Semiconductor body, which are electrically conductive at certain areas of your surface a connection element are contacted. Such connection elements are for reasons the electrical conductivity predominantly Metals such as aluminum or copper formed.
Der thermische Längenausdehnungskoeffizient dieser wie auch anderer für solche Anschlusselemente verwendete Metalle unterscheidet sich stark vom thermischen Längenausdehnungskoeffizienten des Halbleiterkörper. Der lineare thermische Ausdehnungskoeffizient von Kupfer beispielsweise beträgt 17 ppm/K, der von Aluminium sogar 25 ppm/K. Im Vergleich dazu ist der lineare thermische Ausdehnungskoeffizient von Silizium mit ca. 3 ppm/K sehr gering.Of the thermal expansion coefficient this as well as others for such metals used is very different from thermal expansion coefficients of the Semiconductor body. The linear thermal expansion coefficient of copper, for example is 17 ppm / K, that of aluminum even 25 ppm / K. In comparison, the linear thermal expansion coefficient of silicon with approx. 3 ppm / K very low.
In Folge dieser stark unterschiedlichen thermischen Ausdehnungskoeffizienten kommt es im Bereich der Kontaktstelle zwischen einem Anschlusselement und einem Halbleiterkörper zu hohen thermomechanischen Spannungen, die insbesondere bei häufigen Temperaturwechseln mit hohen Temperaturunterschieden, wie sie beispielsweise bei Leistungshalbleiterbauelementen häufig vorkommen, zu einer Ablösung des Anschlusselements vom Halbleiter.In Result of these very different thermal expansion coefficients it comes in the region of the contact point between a connection element and a semiconductor body too high thermomechanical stresses, especially during frequent temperature changes with high temperature differences, as for example in power semiconductor devices often occur, to a replacement of the connection element of the semiconductor.
Ein
Querschnitt durch eine typische Kontaktstelle gemäß dem Stand
der Technik ist in
Das
Anschlusselement
Wie
aus
Es ist daher die Aufgabe der vorliegenden Erfindung, ein Halbleiterbauelement mit einem Halbleiterkörper bereit zu stellen, dessen Anschlusselemente zuverlässig und temperaturwechselstabil mit einer Kontaktfläche des Halbleiterkörpers verbunden sind.It Therefore, the object of the present invention is a semiconductor device with a semiconductor body to provide its connection elements reliably and temperature change stable connected to a contact surface of the semiconductor body.
Diese Aufgabe wird durch ein Halbleiterbauelement gemäß Anspruch 1 gelöst. Vorteilhafte Ausgestaltungen und Weiterbildungen der Erfindung sind Gegenstand von Unteransprüchen.These The object is achieved by a semiconductor component according to claim 1. advantageous Embodiments and developments of the invention are the subject of dependent claims.
Ein erfindungsgemäßes Halbleiterbauelement weist einen Halbleiterkörper mit einer ersten Kontaktfläche sowie ein Anschlusselement mit einer zweiten Kontaktfläche auf. Die erste Kontaktfläche weist in einer horizontalen Richtung einen ersten Rand und die zweite Kontaktfläche in der horizontalen Richtung einen zweiten Rand auf.One inventive semiconductor device has a semiconductor body with a first contact surface and a connection element with a second contact surface. The first contact surface points in a horizontal direction, a first edge and the second contact area in the horizontal direction on a second edge.
Die erste Kontaktfläche und die zweite Kontaktfläche sind in einer vertikalen Richtung voneinander beabstandet und mittels einer zwischen diesen angeordneten Ausgleichsmetallisierung zum Ausgleich thermomechanischer Spannungen mechanisch und elektrisch leitend verbunden. Die Ausgleichsmetallisierung weist eine Dicke von wenigstens 10 μm auf sowie wenigstens zwei Vertikalabschnitte, die in der vertikalen Richtung stufig aufeinanderfolgend angeordnet sind, wodurch ein Großteil der auftretenden thermomechanischen Spannungen innerhalb der Ausgleichsmetallisierung abgebaut wird. Des Weiteren weist die erste Kontaktfläche in der horizontalen Richtung einen Rand auf.The first contact surface and the second contact surface are spaced apart in a vertical direction and by means of a compensation metallization arranged between them for the Compensation of thermo-mechanical stresses mechanically and electrically conductively connected. The compensation metallization has a thickness of at least 10 μm on and at least two vertical sections in the vertical Direction stages are arranged successively, creating a Much of the occurring thermo-mechanical stresses within the Ausgleichsmetallisierung is reduced. Furthermore, the first contact surface in the horizontal direction on an edge.
Während herkömmliche erste Verbindungsschichten lediglich dazu dienen, eine Kontaktierbarkeit des Halbleiterkörpers zu ermöglichen, ist eine Ausgleichsmetallisierung eines erfindungsgemäßen Halbleiterbauelements zum Ausgleich thermomechanischer Spannungen vorgesehen und weist daher eine erheblich größere Dicke auf. Je dicker eine solche Ausgleichsmetallisierung ausgebildet ist, desto geringer ist der Gradient der thermomechanischen Spannung, die im Bereich der Kontaktierung zwischen dem Halbleiterkörper und dem Anschlusselement abgebaut werden muss.While conventional first connecting layers only serve a contactability of the semiconductor body to enable is a compensation metallization of a semiconductor device according to the invention provided to compensate for thermo-mechanical stresses and has therefore a considerably larger thickness on. The thicker such a compensation metallization is formed is, the lower the gradient of the thermo-mechanical stress, in the region of the contact between the semiconductor body and the connection element must be dismantled.
Bevorzugt weisen erste Verbindungsschichten Dicken zwischen 1 μm und 20 μm auf. Die Ausgleichsmetallisierung und die erste Verbindungsschicht können optional einstückig ausgebildet sein.Prefers have first connecting layers thicknesses between 1 micron and 20 microns. The Compensation metallization and the first interconnect layer may be optional one piece be educated.
Die mechanische und elektrisch leitende Verbindung zwischen dem Anschlusselement und der Ausgleichsmetallisierung erfolgt im Bereich der zweiten Kontaktfläche. Dabei kann das Anschlusselement unmittelbar mit der Ausgleichsmetallisierung verbunden sein, wie dies z.B. beim Ultraschallbonden des Anschlusselementes der Fall ist.The mechanical and electrically conductive connection between the connection element and the equalization metallization occurs in the region of the second Contact area. In this case, the connection element can be connected directly to the compensation metallization be such as e.g. during ultrasonic bonding of the connection element the case is.
Optional kann jedoch auch zusätzliches Material, beispielsweise ein Lot, verwendet werden, das zwischen der Ausgleichsmetallisierung und dem Anschlusselement angeordnet ist.optional but can also be additional Material, such as a solder, can be used between arranged the Ausgleichsmetallisierung and the connection element is.
Um
die bei der Verbindung zwischen der ersten Kontaktfläche und
dem Anschlusselement an den Rändern
der zweite Kontaktfläche
auftretenden maximalen thermomechanischen Spannung, wie diese anhand
der
Bei der stufigen Ausgleichsmetallisierung ist vorzugsweise zumindest ein Vertikalabschnitt in der horizontalen Richtung weiter vom Rand der ersten Kontaktfläche beabstandet als jeder andere in der vertikalen Richtung näher an der ersten Kontaktfläche angeordnete Vertikalabschnitt.at the level compensation metallization is preferably at least a vertical section in the horizontal direction farther from the edge the first contact surface spaced as each other in the vertical direction closer to the first contact surface arranged vertical section.
Besonders bevorzugt ist jeder der Vertikalabschnitte in der horizontalen Richtung weiter vom Rand der ersten Kontaktfläche beabstandet als jeder andere in der vertikalen Richtung näher an der ersten Kontaktfläche angeordnete Vertikalabschnitt. Dadurch wird erreicht, dass zwischen zwei beliebigen in der vertikalen Richtung benachbarten oder aneinander grenzenden Vertikalabschnitten jeweils eine Stufe ausgebildet ist.Especially Preferably, each of the vertical sections is in the horizontal direction further apart from the edge of the first contact surface than any other closer in the vertical direction at the first contact surface arranged vertical section. This will achieve that between any two adjacent or contiguous in the vertical direction adjacent vertical sections each have a step is formed.
Gemäß einer bevorzugten Ausführungsform ist zumindest ein Vertikalabschnitt in allen seinen zur vertikalen Richtung senkrechten Schnittebenen in der horizontalen Richtung gleich weit vom Rand der ersten Kontaktfläche beabstandet. In gleicher Weise kann dies auch für mehrere oder für alle Vertikalabschnitte der Ausgleichsmetallisierung zutreffen, wobei ver schiedene Vertikalabschnitte in der horizontalen Richtung vorzugsweise unterschiedlich weit vom Rand der ersten Kontaktfläche beabstandet sind.According to one preferred embodiment at least one vertical section in all its directions to the vertical direction vertical cutting planes in the horizontal direction the same distance from the edge of the first contact surface spaced. In the same way, this can also be done for several or for all vertical sections the Ausgleichsmetallisierung apply, with ver different vertical sections in the horizontal direction preferably different from the edge the first contact surface are spaced.
Um die im Bereich der Kontaktstelle auftretenden thermomechanischen Spannungen ausreichend abzubauen, ist es vorteilhaft, wenn die in der horizontalen Richtung gemessene Breite einer Stufe wenigstens das Doppelte von deren Höhe, d.h. der Dicke des betreffenden Vertikalabschnitts, beträgt. Entsprechendes gilt auch für die Stufe, die zwischen der zweiten Kontaktfläche und dem von der ersten Kontaktfläche am weitesten beabstandeten Vertikalabschnitt ausgebildet ist.Around the occurring in the region of the contact point thermo-mechanical Reduce tensions sufficiently, it is advantageous if the in the horizontal direction measured width of a step at least twice their height, i.e. the thickness of the respective vertical section is. The same applies to the step furthest between the second contact surface and the first contact surface spaced vertical section is formed.
Die Erfindung wird nachfolgend in Ausführungsbeispielen anhand von Figuren näher erläutert. In den Figuren zeigen:The Invention will be described below in embodiments with reference to Figures closer explained. In show the figures:
In den Figuren bezeichnen gleiche Bezugszeichen gleiche Teile mit gleicher Bedeutung.In the same reference numerals designate like parts with the same Importance.
Infolge
der stufigen Anordnung verteilen sich die aus
Die
erste Kontaktfläche
Das
Anschlusselement
Die
Ausgleichsmetallisierung
Um
eine möglichst
gleichmäßige Verteilung der
thermomechanischen Spannungen im Bereich der Stufenübergänge zu erhalten
ist es vorteilhaft, wenn die Dicken d1, d2 der Vertikalabschnitte
Besonders
gute Verhältnisse
betreffend die Dauerhaftigkeit einer temperaturwechselfesten Verbindung
zwischen der ersten Kontaktfläche
Im
Unterschied zu der Kontaktstelle gemäß
Die
Dicke d3 der ersten Verbindungsschicht
Der
Aufbau der Ausgleichsmetallisierung
Entsprechend
einer bevorzugten Ausführungsform
der Erfindung ist auch zwischen der zweiten Verbindungsschicht
Ein
weiteres bevorzugtes Ausführungsbeispiel
eines erfindungsgemäßen Halbleiterbauelements
ist in
Auf
seiner dem Substrat
Zur
elektrisch leitenden und mechanischen Verbindung des Halbleiterkörpers
Während die
Ausgleichsmetallisierung
Die
Ausgleichsmetallisierung
Zwischen
der Ausgleichsmetallisierung
Das
Verbindungsgefüge
ausgehend von der ersten Kontaktfläche
Weiterhin
kann auch an der Ausgleichsmetallisierung
Ist
zwischen der Ausgleichsmetallisierung
Insgesamt
umfasst das Verbindungsgefüge bei
dem Ausführungsbeispiel
gemäß
In
der horizontalen Richtung r weist die erste Kontaktfläche
Die
Ausgleichsmetallisierung
Gemäß einer
bevorzugten Ausführungsform der
Erfindung weist eine Ausgleichsmetallisierung
Die
Vertikalabschnitte
Auf
den Halbleiterkörper
Eine
Isolierfolie
Das
Anschlusselement
Ein
als Leiterbahn ausgebildetes Anschlusselement
Die
Ausgleichsmetallisierungen
Um
eine ausreichend hohe Stromtragfähigkeit
des Anschlusselements
Eine
zu
Die
anhand der
In den gezeigten Ausführungsbeispielen wurde der gestufte Aufbau eines Verbindungsgefüges ausgehend von einer Kontaktstelle über eine optionale erste Verbindungsschicht, eine Ausgleichsmetallisierung, eine optionale zweite Verbindungsschicht mit einem Anschlusselement in Bezug auf eine horizontale Richtung r bezogen. In entsprechender Weise kann der Aufbau des Verbindungsgefüges auch in einander entgegengesetzten horizontalen Richtungen r jeweils gestuft gewählt sein.In the embodiments shown has been the stepped structure of a connection structure starting from a contact point via a optional first tie layer, a balance metallization, an optional second connection layer with a connection element with respect to a horizontal direction r. In appropriate Way, the structure of the compound structure can also be opposed to each other horizontal directions r each stepped.
Wie
in
Die
Breiten aller vorhandenen Stufen, von denen in
- 11
- Vertikalabschnittvertical section
- 22
- Vertikalabschnittvertical section
- 33
- erste Verbindungsschichtfirst link layer
- 44
- zweite Verbindungsschichtsecond link layer
- 1010
- AusgleichsmetallisierungAusgleichsmetallisierung
- 1212
- dem Rand zugewandte Seite des ersten Vertikalabthe Edge facing side of the first Vertikalab
- schnittessection
- 1515
- Stufestep
- 2222
- dem Rand zugewandte Seite des zweiten Vertikalabthe Edge facing side of the second Vertikalab
- schnittessection
- 2525
- Stufestep
- 3131
- Kontaktierungsbereichcontacting
- 3535
- Stufestep
- 4040
- HalbleiterkörperSemiconductor body
- 4141
- erste Kontaktflächefirst contact area
- 5050
- Anschlusselementconnecting element
- 50a–d50a-d
- Anschlusselemente (Leiterbahnen)connection elements (Conductors)
- 5151
- Passivierungpassivation
- 5252
- zweite Kontaktflächesecond contact area
- 5454
- Metallmaskierungmetal mask
- 5555
- Isolierfolieinsulation
- 6060
- Substratsubstratum
- 6161
- Lotsolder
- 101101
- dem Rand der ersten Kontaktfläche zugewandte Seitethe Edge of the first contact surface facing side
- der Metallisierungsschichtof the metallization
- 112112
- Rand des Übergangsbereichs zwischen dem ersten Vertiedge the transition area between the first Verti
- kalabschnitt und dem zweiten Vertikalabschnittkalabschnitt and the second vertical section
- 411411
- Rand der ersten Kontaktflächeedge the first contact surface
- 521521
- dem Rand der ersten Kontaktfläche zugewandte Seitethe Edge of the first contact surface facing side
- der ersten Grenzschichtof the first boundary layer
- d0d0
- Abstand der Schnittebene von der ersten Kontaktflächedistance the cutting plane from the first contact surface
- d1d1
- Dicke des ersten Vertikalabschnittesthickness of the first vertical section
- d2d2
- Dicke des zweiten Vertikalabschnittesthickness of the second vertical section
- d3d3
- Dicke der ersten Verbindungsschichtthickness the first connection layer
- d4d4
- Dicke der zweiten Verbindungsschichtthickness the second connection layer
- d10d10
- Dicke der Ausgleichsmetallisierungthickness the equalization metallization
- d501d501
- Minimale Dicke des Anschlusselementes innerhalb derminimal Thickness of the connection element within the
- ersten Kontaktflächefirst contact area
- d502D502
- Dicke des Anschlusselementes außerhalb der erstenthickness of the connection element outside the first
- Kontaktflächecontact area
- Ee
- Schnittebenecutting plane
- rr
- horizontale Richtunghorizontal direction
- r1r1
- horizontale Richtunghorizontal direction
- r2r2
- horizontale Richtunghorizontal direction
- vv
- vertikale Richtungvertical direction
- x1x1
- horizontaler Abstand zwischen dem Rand der erstenhorizontal Distance between the edge of the first
- Kontaktfläche und dem ersten VertikalabschnittContact surface and the first vertical section
- x2x2
- horizontaler Abstand zwischen dem Rand der erstenhorizontal Distance between the edge of the first
- Kontaktfläche und dem zweiten VertikalabschnittContact surface and the second vertical section
- x52x52
- horizontaler Abstand zwischen dem Rand der erstenhorizontal Distance between the edge of the first
- Kontaktfläche und dem Rand der zweiten KontaktflächeContact surface and the edge of the second contact surface
- xExE
- horizontaler Abstand zwischen der Ausgleichsmetallihorizontal Distance between the equalization metals
- sierung und dem Rand der ersten Kontaktfläche in eition and the edge of the first contact surface in egg
- ner Schnittebene der Ausgleichsmetallisierung.ner Section plane of the compensation metallization.
Claims (29)
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DE102004059389A DE102004059389B4 (en) | 2004-12-09 | 2004-12-09 | Semiconductor device with compensation metallization |
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DE102004059389A DE102004059389B4 (en) | 2004-12-09 | 2004-12-09 | Semiconductor device with compensation metallization |
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