DE102004011148B3 - Microphone esp. semiconductor capacitor microphone for use in mobile telephones and the like having space between chip and substrate in pressure communication with space between chip and cover - Google Patents
Microphone esp. semiconductor capacitor microphone for use in mobile telephones and the like having space between chip and substrate in pressure communication with space between chip and cover Download PDFInfo
- Publication number
- DE102004011148B3 DE102004011148B3 DE102004011148A DE102004011148A DE102004011148B3 DE 102004011148 B3 DE102004011148 B3 DE 102004011148B3 DE 102004011148 A DE102004011148 A DE 102004011148A DE 102004011148 A DE102004011148 A DE 102004011148A DE 102004011148 B3 DE102004011148 B3 DE 102004011148B3
- Authority
- DE
- Germany
- Prior art keywords
- microphone
- substrate
- chip
- lid
- sound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 239000003990 capacitor Substances 0.000 title claims abstract description 12
- 238000004891 communication Methods 0.000 title abstract description 3
- 239000004065 semiconductor Substances 0.000 title description 2
- 239000012528 membrane Substances 0.000 claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000000926 separation method Methods 0.000 claims description 42
- 239000000853 adhesive Substances 0.000 claims description 14
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 2
- 230000001419 dependent effect Effects 0.000 abstract 1
- 239000002847 sound insulator Substances 0.000 abstract 1
- 230000008859 change Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000003292 glue Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000013464 silicone adhesive Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000010137 moulding (plastic) Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
- H04R31/006—Interconnection of transducer parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2499/00—Aspects covered by H04R or H04S not otherwise provided for in their subgroups
- H04R2499/10—General applications
- H04R2499/11—Transducers incorporated or for use in hand-held devices, e.g. mobile phones, PDA's, camera's
Abstract
Description
Die vorliegende Erfindung bezieht sich auf ein Mikrophon und ein Verfahren zur Herstellung eines Mikrophons und insbesondere auf Halbleiter-Kondensatormikrophone.The The present invention relates to a microphone and a method for making a microphone, and more particularly to semiconductor capacitor microphones.
Immer häufiger werden in technischen Geräten, vor allem auch in tragbaren Geräten wie Mobiltelefonen, Laptops und PDAs, Mikrophone eingesetzt, die eine Umsetzung eines akustischen Signals in ein elektrisches Signal durchführen. Die zunehmende Miniaturisierung der Geräte, wie z. B. Mobiltelefone, Laptops, stellt die Anforderung, daß die Komponenten, wie z. B. die Mikrophone, die dort eingesetzt werden, ebenfalls in ihren Abmessungen reduziert werden, oder der Umsetzung des akustischen Signals in ein elektrisches Signal nachgelagerte Signalverarbeitungseinheiten ebenfalls in der Mikrophoneinrichtung integriert werden. Ein weiterer Treiber einer Systemintegration ist der zunehmende Kostendruck auf die Geräte und die darin enthaltenen Komponenten wie z. B. die Mikrophone.always frequently be in technical devices, especially in portable devices such as cell phones, laptops and PDAs, microphones are used a conversion of an acoustic signal into an electrical signal carry out. The increasing miniaturization of devices such. Mobile phones, laptops, makes the request that the Components, such. For example, the microphones used there also be reduced in their dimensions, or implementation downstream of the acoustic signal into an electrical signal Signal processing units also in the microphone device to get integrated. Another driver of system integration is the increasing cost pressure on the devices and the included therein Components such. B. the microphones.
Zusätzlich stellen die Verbraucher in immer höherem Umfang insbesondere an tragbare Geräte die Anforderung, diese auch bei Outdoor-Aktivitäten einzusetzen, was bedeutet, daß diese und die darin enthaltenen Komponenten besonders gegen Umwelteinflüsse, wie z. B. Feuchtigkeit, Staub etc., geschützt werden müssen. Gleichzeitig führt die zunehmende Verbesserung der Verarbeitung der Sprachsignale in den Mikrophonen nachgelagerten Einrichtungen, wie z. B. digitalen Signalprozessoren, dazu, daß auch die Eigenschaften der Mikrophone verbessert werden sollen, da die Qualität der Sprachübertragung immer weiter zunimmt.Additionally put the consumers in ever higher Scope especially to portable devices the requirement, these too to use in outdoor activities, which means that this and the components contained therein especially against environmental influences, such as z. As moisture, dust, etc., must be protected. simultaneously leads the increasing improvement of the processing of speech signals in the Microphones downstream facilities, such. B. digital signal processors, to that, too the characteristics of the microphones are to be improved, since the quality the voice transmission continues to increase.
Die
Die WO 02/45463-A2 zeigt Mikrophone, die in einer Flip-Chip-Montage auf ein Substrat aufgebracht sind, und bei denen der Kleber zum Befestigen der Mikrophonchips gleichzeitig zur Schalltrennung zwischen einem Rückvolumen des Mikrophons und einem Schalleingang bzw. Acoustic Port eingesetzt wird.The WO 02/45463-A2 shows microphones that are in a flip-chip mounting on a substrate are applied, and in which the adhesive for fixing the microphone chips at the same time for sound separation between a back volume of the microphone and a sound input or Acoustic Port is used.
Nachteilig an dieser Vorgehensweise, den Kleber zum Befestigen des ICs gleichzeitig zur Schalltrennung zu verwenden, ist das aufwendige Testen der Anordnung und die kritischen Anforderungen in der Fertigung, daß der Kleber zwischen Chip und Substrat eine schallundurchlässige Barriere bilden soll, und gleichzeitig kein Kleber auf die Membran oder in den Luftspalt zwischen der Membran und der Gegenstruktur gelangen darf, was das Mikrophon sonst sofort zerstören würde.adversely At this procedure, glue the to attach the IC at the same time to use for sound separation, is the complex testing of the arrangement and the critical requirements in manufacturing that the glue to form a soundproof barrier between the chip and the substrate and at the same time no glue on the membrane or in the air gap between the membrane and the counter-structure may reach what the Otherwise destroy the microphone immediately would.
Das Aufbringen des Klebers zwischen Substrat und Mikrophonchip erschwert ferner eine optische Inspektion und ein Testen der Kontakte zwischen Mikrophonchip und Substrat.The Application of the adhesive between substrate and microphone chip difficult an optical inspection and testing of the contacts between Microphone chip and substrate.
Auch ist der für die Montage von Chips üblicherweise eingesetzte Kleber bzw. Underfiller nur ungenügend geeignet, den Schalleingang und das Rückvolumen akustisch voneinander abzudichten, da er nur für das Befestigen eines Chips auf einer Platine gedacht ist.Also is the for the mounting of chips usually used adhesive or Underfiller only insufficiently suitable, the sound input and the back volume to be acoustically sealed from each other as it is only for attaching a chip is intended on a circuit board.
Zusätzlich ist es sehr schwierig, während der Fertigung das Einbringen von Kleber in den Bereich der Membran und der Gegenstruktur zu unterbinden. Die WO 02/45463 A2 lehrt hier den Einsatz eines Schutzrings bzw. Retaining-Rings zwischen dem Bereich, in dem der Kleber aufgebracht wird, und dem Bereich der Membran- und Gegenstruktur.In addition is it is very difficult while the production of the introduction of adhesive in the region of the membrane and to prevent the counter structure. WO 02/45463 A2 teaches here the use of a protective ring or retaining ring between the Area in which the adhesive is applied, and the area of the Membrane and counter structure.
Ferner zeigt die Firma Sonion/Microtronics (www.sonion.com) in einer Application Note mit dem Titel „Introduction of Microphones", überarbeitet am 2. 9. 2002, miniaturisierte Mikrophone.Further shows the company Sonion / Microtronics (www.sonion.com) in an application Note entitled "Introduction of Microphones ", revised on 2. 9. 2002, miniaturized microphones.
Der vorliegenden Erfindung liegt die Aufgabe zugrunde, ein Mikrophon, das einfacher zu fertigen und zu testen ist, und ein Verfahren zum Herstellen des Mikrophons zu schaffen.Of the present invention is based on the object, a microphone, which is easier to manufacture and test, and a method for Creating the microphone.
Diese Aufgabe wird durch ein Mikrophon gemäß Anspruch 1 und ein Verfahren gemäß Anspruch 12 gelöst.These The object is achieved by a microphone according to claim 1 and a method according to claim 12 solved.
Die vorliegende Erfindung schafft ein Mikrophon mit folgenden Merkmalen: einem Mikrophonchip mit einer Membranstruktur und einer Gegenstruktur, wobei die Membran- und die Gegenstruktur einen Mikrophonkondensator bilden, dessen Kapazität abhängig von einem erfaßten Schall veränderbar ist; einem Substrat einem Deckel mit einem schalldurchlässigen Bereich, wobei der Deckel mit einem Substrat so verbunden ist, daß in einem Raum zwischen dem Deckel und dem Substrat der Mikrophonchip aufgenommen ist; einer Schalltrennung um den schalldurchlässigen Bereich des Deckels herum, wobei die Schalltrennung zwischen dem Mikrophonchip und dem Deckel angeordnet ist; und mindestens einer Befestigungseinrichtung zum Befestigen des Mikrophonchips an dem Substrat, wobei die mindestens eine Befestigungseinrichtung so ausgebildet ist, daß ein Raum zwischen dem Mikrophonchip und dem Substrat mit einem Raum zwischen dem Mikrophonchip und dem Deckel druckmäßig kommuniziert.The present invention provides a microphone having the following features: a microphone chip having a membrane structure and a counter-structure, wherein the membrane and the counter-structure form a microphone capacitor whose capacitance is variable depending on a detected sound; a lid having a sound transmissive area, the lid being connected to a substrate such that the microphone chip is received in a space between the lid and the substrate; a sound separation around the sound-transmitting area of the lid, the sound separation being arranged between the microphone chip and the lid; and at least one fastening device for fastening the Mi krophonchips on the substrate, wherein the at least one fastening means is formed so that a space between the microphone chip and the substrate communicates with a space between the microphone chip and the lid in terms of pressure.
Der vorliegenden Erfindung liegt die Erkenntnis zugrunde, daß die Funktionen der Befestigung und der akustischen Trennung auf zwei verschiedenen Seiten des Mikrophonchips implementiert werden, also entkoppelt werden.Of the The present invention is based on the finding that the functions the attachment and the acoustic separation on two different Pages of the microphone chip are implemented, that is decoupled become.
Eine hohe Mikrophonempfindlichkeit wird dadurch erreicht, daß der Mikrophonchip an einem Substrat so befestigt wird, daß ein Raum zwischen Mikrophonchip und dem Substrat mit einem Raum zwischen dem Mikrophonchip und dem Deckel druckmäßig kommuniziert, was sich unmittelbar in einem hohen Rückvolumen niederschlägt.A high microphone sensitivity is achieved by the microphone chip is attached to a substrate so that a space between the microphone chip and the substrate with a space between the microphone chip and the Lid communicates in terms of pressure, which immediately translates into a high back volume.
Der Vorteil der Erfindung liegt darin, daß dieses Mikrophon einfach zu fertigen ist. Die Entkopplung von Befestigungseinrichtung und akustischer Trennung macht den Einsatz eines Schutzrings gegen das Eindringen von Kleber in den Bereich der Membran- oder der Gegenstruktur obsolet.Of the Advantage of the invention is that this microphone easy to be finished. The decoupling of fastening device and Acoustic separation makes the use of a protective ring against the Penetration of adhesive into the area of the membrane or counterstructure obsolete.
Außerdem ist auf einer der akustischen Trennung gegenüberliegenden Seite die Befestigungsfunktionalität angesiedelt, was den Vorteil mit sich bringt, daß die Befestigungseinrichtung so schalldurchlässig wie möglich ausgelegt werden kann, und somit keine Kompromisse zwischen mechanischer Befestigung und akustischer Trennung einzugehen sind.Besides that is settled on one of the acoustic separation opposite side the attachment functionality, which brings with it the advantage that the fastening device so sound-permeable as possible can be designed, and thus no compromise between mechanical attachment and acoustic separation are.
Die Entkopplung von akustischer Trennung und mechanischer Befestigung erhöht überdies die Langlebigkeit des Mikrophons, da jetzt für die akustische Trennung Materialien eingesetzt werden können, die über lange Zeit hinweg nicht porös werden.The Decoupling of acoustic separation and mechanical fastening also increases the longevity of the microphone, because now for the acoustic separation materials can be used the above not porous for a long time become.
Auch zieht diese Entkopplung von mechanischer Befestigung und akustischer Trennung mehr Flexibilität nach sich, da das Material für die akustische Trennung jetzt anwendungsspezifisch angepasst werden kann. Denkbar ist somit ein sehr strapazierfähiges Material für die Aufnahme sehr lauter Geräusche in dem Mikrophon einzusetzen, während für Geräusche von einer durchschnittlichen Lautstärke beispielsweise ein Kleber eingesetzt werden kann.Also pulls this decoupling from mechanical attachment and acoustic Separation more flexibility in itself, as the material for The acoustic separation can now be adapted to the specific application can. It is therefore conceivable a very durable material for recording very loud noises in the microphone, while for noises from an average volume For example, an adhesive can be used.
Ein weiterer Vorteil der Entkopplung von mechanischer Befestigung und akustischer Trennung ist, daß die mechanischen Befestigungseinrichtungen, wenn sie nicht zugleich zur akustischen Trennung eingesetzt werden leichter zugänglich sind, was das elektrische Testen des Mikrophons erleichtert.One Another advantage of the decoupling of mechanical fastening and Acoustic separation is that the mechanical fasteners, if not at the same time used for acoustic separation are more easily accessible, which facilitates the electrical testing of the microphone.
Die Separierung von mechanischer Befestigung und akustischer Trennung erleichtert auch den Reflow-Lötprozeß, da jetzt beim Erhitzen der mechanischen Befestigung keine Rücksicht auf irgendwelche Materialen zur akustischen Trennung in der Nachbarschaft zu den mechanischen Befestigungseinrichtungen genommen werden braucht.The Separation of mechanical fastening and acoustic separation also facilitates the reflow soldering process, since now when heating the mechanical fastening no consideration on any materials for acoustic separation in the neighborhood needs to be taken to the mechanical fasteners.
Bevorzugte Ausführungsbeispiele der vorliegenden Erfindung werden nachfolgend Bezug nehmend auf die beiliegenden Zeichnungen näher erläutert. Es zeigen:preferred embodiments The present invention will be described below with reference to FIG the enclosed drawings closer explained. Show it:
Der
Mikrophonchip
Eine
von oben kommende Schallwelle tritt durch den Schalleingang
Die
Schallwellen passieren die perforierte Gegenstruktur
In
dem Signalverarbeitungschip
Bei einem bevorzugten Ausführungsbeispiel ist die Schalltrennung bzw. akustische Trennung so eingestellt, daß sich weniger als 50% der Schallenergie von einem Raum in einen zweiten angrenzenden Raum ausbreitet, wobei sogar ein Wert von weniger als 1% Schallausbreitung erzielt wird. Typischerweise wird die Schalltrennung durch ein Material mit den dargestellten Schalldämpfungseigenschaften bewirkt.at a preferred embodiment the sound separation or acoustic separation adjusted so that less as 50% of the sound energy from one room to a second adjacent room spread, even a value of less than 1% sound propagation is achieved. Typically, the sound separation by a material with the illustrated sound damping properties causes.
In
diesem Ausführungsbeispiel
umfaßt
das Substrat
Die Empfindlichkeit eines Mikrophons wird durch das Verhältnis aus Kapazitätsänderung zu Schalldruckänderung festgelegt. Wenn das Rückvolumen bei einem Mikrophon abgeschlossen ist, so erzeugt die Membranauslenkung eine Änderung des Rückvolumens und damit eine Änderung des Drucks in dem hinter der Membranstruktur liegenden Raum. Diese Änderung des Drucks wirkt dem originären Schalldruck entgegen und beschränkt die Auslenkung der Membran. Um eine hohe Empfindlichkeit zu erzielen, ist daher die relative Änderung des Drucks in dem Raum hinter der Membran gering zu halten, was wiederum durch eine geringe relative Volumensänderung erreicht werden kann, die durch ein hohes Rückvolumen erzielt werden kann. Bei einem großen Rückvolumen führt eine Volumensänderung um einen bestimmten Betrag zu einer kleineren relativen Volumensänderung als bei einem kleinen Rückvolumen. Daher ist ein hohes Rückvolumen eine Voraussetzung für eine hohe Empfindlichkeit eines Mikrophons.The sensitivity of a microphone is determined by the ratio of capacitance change to sound pressure change. When the back volume of a microphone is completed, the diaphragm displacement creates a change in the back volume and thus a change in pressure in the space behind the membrane structure. This change in pressure counteracts the original sound pressure and limits the deflection of the membrane. To get a high sensitivity too Therefore, the relative change in pressure in the space behind the membrane must be kept low, which in turn can be achieved by a small relative volume change that can be achieved by a high back volume. For a large back volume, a volume change by a certain amount results in a smaller relative volume change than a small back volume. Therefore, a high back volume is a prerequisite for high sensitivity of a microphone.
In
Anschließend wird
ein Reflow-Lötprozeß durchgeführt, so
daß die
Befestigungseinrichtungen
Danach
wird auf dem Membranträger
Anschließend wird
der Deckel
Hierdurch
entstehen in einem Gehäuseinneren,
eines aus Deckel
In
obigen Ausführungsbeispielen
ist die Schalltrennung
Auch
die Gegenstruktur
Die
Zahl der Befestigungen
Der
als Kleber eingesetzte Underfiller
Die
Befestigungen
Der
in obigen Ausführungsbeispielen
eingesetzte Fertigungsschritt des Reflow-Lötens kann auch durch einen
beliebigen anderen Fertigungsschritt, der eine mechanische Anbindung
des Mikrophonchips
Obige
Ausführungsbeispiele
zeigen, wie beispielsweise Silizium-Mikrophone, die insbesondere für mobile
Anwendungen in SMD-Gehäusen
aufgebaut werden sollen, ausgeführt
sein können.
Dabei sind akustische, mechanische und elektrische Randbedingungen
einzuhalten. Gleichzeitig soll das Bauteil so klein wie möglich sein,
insbesondere flach, und mindestens eine Temperatur von 260°C aushalten. Die
obigen Ausführungsbeispiele
kombinieren die Flip-Chip-Montage mittels Solder-Bumps
Außerdem kann
ein Bauteil, das nach obigen Ausführungsbeispielen gefertigt
worden ist, die volle Temperaturfestigkeit gewährleisten. Besonders hervorzuheben
ist auch die Schallankopplung in den obigen Ausführungsbeispielen. In obigen
Ausführungsbeispielen
besteht das Mikrophon aus dem Mikrophonchip
In
obigen Ausführungsbeispielen
ist die Membran
Ein
Prozeßablauf
für die
Herstellung eines Mikrophons in obigen Ausführungsbeispielen könnte folgendermaßen aussehen: Beide
Chips, sowohl der Mikrophonchip
Die
akustische Abdichtung
Das strömungsgedämpfte Schalloch ist vorzugsweise ein Loch in dem Substrat mit einer Querschnittsfläche, die kleiner als die Fläche des Lochs in dem Deckel ist und vorzugsweise kleiner als 50% der Querschnittsfläche des Lochs im Deckel ist. Das strömungsgedämpfte Loch kann einen beliebigen Quer schnitt haben, also von beliebiger Größe sein, wenn es mit einem Dämpfungselement versehen ist, so dass die akustische Dämpfung des Lochs im Deckel 50% kleiner ist als die akustische Dämpfung des Lochs im Substrat.The flow-damped soundhole is preferably a hole in the substrate having a cross-sectional area smaller than the area the hole in the lid is, and preferably less than 50% of the cross-sectional area of the Hole in the lid is. The flow-damped hole can have any cross-section, so be of any size, if it is with a damping element is provided so that the acoustic attenuation of the hole in the lid is 50% smaller than the acoustic attenuation of the hole in the substrate.
- 11
- Deckelcover
- 1111
- Substratsubstratum
- 1212
- Substratschichtsubstrate layer
- 2121
- Mikrophonchipmicrophone chip
- 3131
- SignalverarbeitungseinrichtungSignal processing device
- 4141
- Schalltrennungsound isolation
- 5151
- Membranträgermembrane support
- 6161
- Gegenstrukturcounter-structure
- 7171
- Zwischenschichtinterlayer
- 8181
- Membranstrukturmembrane structure
- 9191
- MikrophonchipbefestigungMicrophone chip mounting
- 101101
- SignalverarbeitungschipSignal processing chip
- 111111
- Signalverarbeitungs-Chip-BefestigungSignal processing chip mounting
- 121121
- KleberGlue
- 131131
- KontaktContact
- 131a131
- Signalverarbeitungs-Chip-KontaktSignal processing chip contact
- 131b131b
- Platinenkontaktplatinum contact
- 141141
- Kontaktlochcontact hole
- 151151
- Schalleingangsound input
- 161161
- Kleberschichtadhesive layer
- 171171
- Membrankontaktmembrane contact
- 181181
- Druckaustausch-StrömePressure exchange currents
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004011148A DE102004011148B3 (en) | 2004-03-08 | 2004-03-08 | Microphone esp. semiconductor capacitor microphone for use in mobile telephones and the like having space between chip and substrate in pressure communication with space between chip and cover |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004011148A DE102004011148B3 (en) | 2004-03-08 | 2004-03-08 | Microphone esp. semiconductor capacitor microphone for use in mobile telephones and the like having space between chip and substrate in pressure communication with space between chip and cover |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102004011148B3 true DE102004011148B3 (en) | 2005-11-10 |
Family
ID=35140260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102004011148A Expired - Fee Related DE102004011148B3 (en) | 2004-03-08 | 2004-03-08 | Microphone esp. semiconductor capacitor microphone for use in mobile telephones and the like having space between chip and substrate in pressure communication with space between chip and cover |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102004011148B3 (en) |
Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1755360A1 (en) * | 2005-08-20 | 2007-02-21 | BSE Co., Ltd. | Silicon based condenser microphone and packaging method for the same |
WO2007115304A2 (en) * | 2006-04-04 | 2007-10-11 | Knowles Electronics, Llc | Monitor transducer system and manufacturing method thereof |
FR2907632A1 (en) * | 2006-10-20 | 2008-04-25 | Merry Electronics Co Ltd | Micro-electromechanical system package has isolative stuff that seals group of components and upper surface of substrate to protect group of components from moisture and shield protects components from electromagnetic interference |
WO2008067431A2 (en) * | 2006-11-30 | 2008-06-05 | Analog Devices, Inc. | Microphone system with silicon microphone secured to package lid |
WO2009016587A1 (en) | 2007-08-02 | 2009-02-05 | Nxp B.V. | Electro-acoustic transducer comprising a mems sensor |
US7825484B2 (en) | 2005-04-25 | 2010-11-02 | Analog Devices, Inc. | Micromachined microphone and multisensor and method for producing same |
US7885423B2 (en) | 2005-04-25 | 2011-02-08 | Analog Devices, Inc. | Support apparatus for microphone diaphragm |
CN101132654B (en) * | 2006-08-21 | 2011-04-06 | 日月光半导体制造股份有限公司 | Micro-electromechanical microphone packaging system |
CN101325823B (en) * | 2007-06-11 | 2011-08-17 | 美律实业股份有限公司 | Encapsulation construction for silicon crystal microphone |
DE102010026519A1 (en) * | 2010-07-08 | 2012-01-12 | Epcos Ag | Micro-electro-mechanical system microphone for use in mobile telephone, has sound inlet port arranged in cover or in carrier, and sealing structure attached around sound inlet port on microphone |
EP1992589A3 (en) * | 2007-05-15 | 2012-03-21 | Industrial Technology Research Institute | Packaging of MEMS microphone |
EP1992588A3 (en) * | 2007-05-15 | 2012-03-21 | Industrial Technology Research Institute | Packaging of MEMS microphone |
US8309386B2 (en) | 2005-04-25 | 2012-11-13 | Analog Devices, Inc. | Process of forming a microphone using support member |
US8604566B2 (en) | 2008-06-17 | 2013-12-10 | Infineon Technologies Ag | Sensor module and semiconductor chip |
US8865499B2 (en) | 2010-07-08 | 2014-10-21 | Epcos Ag | MEMS microphone and method for producing the MEMS microphone |
DE102014105849B3 (en) * | 2014-04-25 | 2015-09-17 | Epcos Ag | Microphone with increased back volume and method of manufacture |
DE102014106818B3 (en) * | 2014-05-14 | 2015-11-12 | Epcos Ag | microphone |
WO2015169600A1 (en) | 2014-05-08 | 2015-11-12 | Epcos Ag | Microphone and method for producing a microphone |
WO2015197105A1 (en) | 2014-06-23 | 2015-12-30 | Epcos Ag | Microphone and method of manufacturing a microphone |
JP2016523725A (en) * | 2013-06-18 | 2016-08-12 | エプコス アクチエンゲゼルシャフトEpcos Ag | Method for forming a patterned coating on a part |
DE102014019746B3 (en) * | 2014-05-14 | 2016-12-15 | Epcos Ag | microphone |
DE102014019744B3 (en) * | 2014-05-14 | 2016-12-29 | Epcos Ag | microphone |
DE102015112642A1 (en) | 2015-07-31 | 2017-02-02 | Epcos Ag | Microphone in top port design and manufacturing process |
WO2017059898A1 (en) | 2015-10-07 | 2017-04-13 | Tdk Corporation | Top port microphone with enlarged back volume |
DE102016124057A1 (en) * | 2016-12-12 | 2018-06-14 | Epcos Ag | MEMS microphone with top sound opening and reduced mechanical stress and manufacturing process |
DE102017202023A1 (en) | 2017-02-09 | 2018-08-09 | Robert Bosch Gmbh | Micromechanical sensor device with integrated housing seal, micromechanical sensor arrangement and corresponding manufacturing method |
WO2021174585A1 (en) * | 2020-03-05 | 2021-09-10 | 瑞声声学科技(深圳)有限公司 | Mems sensor package structure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6178249B1 (en) * | 1998-06-18 | 2001-01-23 | Nokia Mobile Phones Limited | Attachment of a micromechanical microphone |
WO2002045463A2 (en) * | 2000-11-28 | 2002-06-06 | Knowles Electronics, Llc | Miniature silicon condenser microphone and method for producing same |
-
2004
- 2004-03-08 DE DE102004011148A patent/DE102004011148B3/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6178249B1 (en) * | 1998-06-18 | 2001-01-23 | Nokia Mobile Phones Limited | Attachment of a micromechanical microphone |
WO2002045463A2 (en) * | 2000-11-28 | 2002-06-06 | Knowles Electronics, Llc | Miniature silicon condenser microphone and method for producing same |
Non-Patent Citations (2)
Title |
---|
Application Note-Introduction of Microphones (on- line). Sonion, 02.09.2002. Im Internet:<URL:http:/ /www.sonion.com>. |
Application Note-Introduction of Microphones (on- line). Sonion, 02.09.2002. Im Internet:<URL:http://www.sonion.com>. * |
Cited By (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8309386B2 (en) | 2005-04-25 | 2012-11-13 | Analog Devices, Inc. | Process of forming a microphone using support member |
US7885423B2 (en) | 2005-04-25 | 2011-02-08 | Analog Devices, Inc. | Support apparatus for microphone diaphragm |
US7825484B2 (en) | 2005-04-25 | 2010-11-02 | Analog Devices, Inc. | Micromachined microphone and multisensor and method for producing same |
EP1755360A1 (en) * | 2005-08-20 | 2007-02-21 | BSE Co., Ltd. | Silicon based condenser microphone and packaging method for the same |
WO2007115304A2 (en) * | 2006-04-04 | 2007-10-11 | Knowles Electronics, Llc | Monitor transducer system and manufacturing method thereof |
WO2007115304A3 (en) * | 2006-04-04 | 2008-12-31 | Knowles Electronics Llc | Monitor transducer system and manufacturing method thereof |
CN101132654B (en) * | 2006-08-21 | 2011-04-06 | 日月光半导体制造股份有限公司 | Micro-electromechanical microphone packaging system |
FR2907632A1 (en) * | 2006-10-20 | 2008-04-25 | Merry Electronics Co Ltd | Micro-electromechanical system package has isolative stuff that seals group of components and upper surface of substrate to protect group of components from moisture and shield protects components from electromagnetic interference |
WO2008067431A3 (en) * | 2006-11-30 | 2008-07-17 | Analog Devices Inc | Microphone system with silicon microphone secured to package lid |
WO2008067431A2 (en) * | 2006-11-30 | 2008-06-05 | Analog Devices, Inc. | Microphone system with silicon microphone secured to package lid |
EP1992588A3 (en) * | 2007-05-15 | 2012-03-21 | Industrial Technology Research Institute | Packaging of MEMS microphone |
EP1992589A3 (en) * | 2007-05-15 | 2012-03-21 | Industrial Technology Research Institute | Packaging of MEMS microphone |
CN101325823B (en) * | 2007-06-11 | 2011-08-17 | 美律实业股份有限公司 | Encapsulation construction for silicon crystal microphone |
WO2009016587A1 (en) | 2007-08-02 | 2009-02-05 | Nxp B.V. | Electro-acoustic transducer comprising a mems sensor |
US8526665B2 (en) | 2007-08-02 | 2013-09-03 | Knowles Electronics Asia Pte. Ltd. | Electro-acoustic transducer comprising a MEMS sensor |
US8604566B2 (en) | 2008-06-17 | 2013-12-10 | Infineon Technologies Ag | Sensor module and semiconductor chip |
DE102010026519A1 (en) * | 2010-07-08 | 2012-01-12 | Epcos Ag | Micro-electro-mechanical system microphone for use in mobile telephone, has sound inlet port arranged in cover or in carrier, and sealing structure attached around sound inlet port on microphone |
US8865499B2 (en) | 2010-07-08 | 2014-10-21 | Epcos Ag | MEMS microphone and method for producing the MEMS microphone |
DE102010026519B4 (en) * | 2010-07-08 | 2016-03-10 | Epcos Ag | Case with MEMS microphone, electrical device with housing with MEMS microphone and method of manufacture |
US9556022B2 (en) | 2013-06-18 | 2017-01-31 | Epcos Ag | Method for applying a structured coating to a component |
JP2016523725A (en) * | 2013-06-18 | 2016-08-12 | エプコス アクチエンゲゼルシャフトEpcos Ag | Method for forming a patterned coating on a part |
DE102014105849B3 (en) * | 2014-04-25 | 2015-09-17 | Epcos Ag | Microphone with increased back volume and method of manufacture |
WO2015161940A1 (en) | 2014-04-25 | 2015-10-29 | Epcos Ag | Microphone having increased rear volume, and method for production thereof |
US9854350B2 (en) | 2014-04-25 | 2017-12-26 | Tdk Corporation | Microphone having increased rear volume, and method for production thereof |
DE102014106503A1 (en) | 2014-05-08 | 2015-11-12 | Epcos Ag | Microphone and method of making a microphone |
WO2015169600A1 (en) | 2014-05-08 | 2015-11-12 | Epcos Ag | Microphone and method for producing a microphone |
DE102014106503B4 (en) * | 2014-05-08 | 2016-03-03 | Epcos Ag | Method of making a microphone |
US10117027B2 (en) | 2014-05-08 | 2018-10-30 | Tdk Corporation | Microphone and method for producing a microphone |
DE102014106818B3 (en) * | 2014-05-14 | 2015-11-12 | Epcos Ag | microphone |
WO2015173009A1 (en) * | 2014-05-14 | 2015-11-19 | Epcos Ag | Microphone arrangement which has an enlarged opening and is decoupled from the cover |
DE102014019746B3 (en) * | 2014-05-14 | 2016-12-15 | Epcos Ag | microphone |
DE102014019744B3 (en) * | 2014-05-14 | 2016-12-29 | Epcos Ag | microphone |
WO2015197105A1 (en) | 2014-06-23 | 2015-12-30 | Epcos Ag | Microphone and method of manufacturing a microphone |
US10499161B2 (en) | 2014-06-23 | 2019-12-03 | Tdk Corporation | Microphone and method of manufacturing a microphone |
US10194227B2 (en) | 2015-07-31 | 2019-01-29 | Tdk Corporation | Top port microphone and method for the production of same |
WO2017021068A1 (en) | 2015-07-31 | 2017-02-09 | Epcos Ag | Top port microphone and method for the production of same |
DE102015112642A1 (en) | 2015-07-31 | 2017-02-02 | Epcos Ag | Microphone in top port design and manufacturing process |
WO2017059898A1 (en) | 2015-10-07 | 2017-04-13 | Tdk Corporation | Top port microphone with enlarged back volume |
US10194251B2 (en) | 2015-10-07 | 2019-01-29 | Tdk Corporation | Top port microphone with enlarged back volume |
DE102016124057A1 (en) * | 2016-12-12 | 2018-06-14 | Epcos Ag | MEMS microphone with top sound opening and reduced mechanical stress and manufacturing process |
WO2018108482A1 (en) * | 2016-12-12 | 2018-06-21 | Epcos Ag | Mems microphone having a sound opening disposed at the top and reduced mechanical loads, and method for the production thereof |
DE102017202023A1 (en) | 2017-02-09 | 2018-08-09 | Robert Bosch Gmbh | Micromechanical sensor device with integrated housing seal, micromechanical sensor arrangement and corresponding manufacturing method |
DE102017202023B4 (en) * | 2017-02-09 | 2020-09-03 | Robert Bosch Gmbh | Micromechanical sensor device with integrated housing seal, micromechanical sensor arrangement and corresponding manufacturing process |
US11085846B2 (en) | 2017-02-09 | 2021-08-10 | Robert Bosch Gmbh | Micromechanical sensor device with integrated housing seal, micromechanical sensor assembly, and corresponding manufacturing method |
WO2021174585A1 (en) * | 2020-03-05 | 2021-09-10 | 瑞声声学科技(深圳)有限公司 | Mems sensor package structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102004011148B3 (en) | Microphone esp. semiconductor capacitor microphone for use in mobile telephones and the like having space between chip and substrate in pressure communication with space between chip and cover | |
DE102004011149B3 (en) | Microphone and method of making a microphone | |
DE102004011144B4 (en) | Pressure sensor and method for operating a pressure sensor | |
DE102005053767B4 (en) | MEMS microphone, method of manufacture and method of installation | |
DE10303263B4 (en) | microphone array | |
DE60003441T2 (en) | PRESSURE CONVERTER | |
DE102010006132B4 (en) | Miniaturized electrical component with a stack of a MEMS and an ASIC | |
DE102005053765B4 (en) | MEMS package and method of manufacture | |
DE102011075260B4 (en) | MEMS microphone | |
DE102006046292B9 (en) | Component with MEMS microphone and method of manufacture | |
DE102015103321B4 (en) | Double diaphragm mems microphone without backplate element | |
DE102009019446B4 (en) | MEMS microphone | |
DE102008053327A1 (en) | Microphone arrangement for use in communication technology, has cased microphone, and acoustic channel connecting sound entry opening and environment above interconnect device on side of interconnect device | |
DE112018005833T5 (en) | SENSOR PACKAGE WITH PENETRATION PROTECTION | |
DE102014108962A1 (en) | Electronic device with a large back volume for an electromechanical transducer | |
DE102012209235A1 (en) | sensor module | |
DE102011004577A1 (en) | Component carrier and component with a MEMS device on such a component carrier | |
WO2012004339A1 (en) | Mems microphone and method for producing the mems microphone | |
DE112015000731T5 (en) | Mems microphone assembly | |
WO2015106880A1 (en) | Multi-mems-module | |
DE102010026519B4 (en) | Case with MEMS microphone, electrical device with housing with MEMS microphone and method of manufacture | |
DE102006022379A1 (en) | Micromechanical pressure transducer for capacitive microelectromechanical system microphone, has substrate-sided cavity forming back volume for movable membrane, and resting at application-specific integrated circuit chip | |
DE102014105849B3 (en) | Microphone with increased back volume and method of manufacture | |
DE102016106263A1 (en) | System and method for a packaged MEMS device | |
DE102014211197B4 (en) | Micromechanical combination sensor arrangement |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8100 | Publication of patent without earlier publication of application | ||
8364 | No opposition during term of opposition | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |