DE10059773A1 - Halbleitervorrichtung und Verfahren zu deren Herstellung - Google Patents
Halbleitervorrichtung und Verfahren zu deren HerstellungInfo
- Publication number
- DE10059773A1 DE10059773A1 DE10059773A DE10059773A DE10059773A1 DE 10059773 A1 DE10059773 A1 DE 10059773A1 DE 10059773 A DE10059773 A DE 10059773A DE 10059773 A DE10059773 A DE 10059773A DE 10059773 A1 DE10059773 A1 DE 10059773A1
- Authority
- DE
- Germany
- Prior art keywords
- pad
- corner
- electrode
- semiconductor device
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 129
- 239000007772 electrode material Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000000872 buffer Substances 0.000 claims description 169
- 238000009413 insulation Methods 0.000 claims description 58
- 238000005192 partition Methods 0.000 claims description 46
- 239000010410 layer Substances 0.000 description 382
- 239000010408 film Substances 0.000 description 376
- 229910052751 metal Inorganic materials 0.000 description 125
- 239000002184 metal Substances 0.000 description 125
- 239000010949 copper Substances 0.000 description 99
- 239000011229 interlayer Substances 0.000 description 92
- 238000000034 method Methods 0.000 description 74
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 50
- 229910052581 Si3N4 Inorganic materials 0.000 description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 45
- 229910052802 copper Inorganic materials 0.000 description 42
- 230000000694 effects Effects 0.000 description 37
- 230000001681 protective effect Effects 0.000 description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 31
- 229910052814 silicon oxide Inorganic materials 0.000 description 31
- 238000005336 cracking Methods 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 22
- 230000005489 elastic deformation Effects 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 19
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- 230000008569 process Effects 0.000 description 16
- 238000005530 etching Methods 0.000 description 15
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- 230000003449 preventive effect Effects 0.000 description 14
- 230000004048 modification Effects 0.000 description 13
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- 239000012160 loading buffer Substances 0.000 description 12
- 238000000206 photolithography Methods 0.000 description 11
- 238000007517 polishing process Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005755 formation reaction Methods 0.000 description 9
- 238000002955 isolation Methods 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000003139 buffering effect Effects 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000013039 cover film Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 206010012289 Dementia Diseases 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 241001465754 Metazoa Species 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000012549 training Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 235000019832 sodium triphosphate Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H01L2224/05085—Plural internal layers being stacked with additional elements, e.g. vias arrays, interposed between the stacked layers
- H01L2224/05089—Disposition of the additional element
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Abstract
Description
ein Material des Unterlagefilms härter als das Elektrodenmaterial ist, während wenigstens ein Teil einer oberen Oberfläche des Pad-Abschnitts zum Verbinden mit einem Draht freiliegt,
eine Draufsichtsform der Pad-Elektrode aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine ungefähre Ellipse, ein ungefähres Polygon mit wenigstens einem Innen winkel größer als 90 Grad und ein ungefähres Polygon mit we nigstens einer abgeschrägten oder abgerundeten Ecke enthält,
die Pad-Elektrode einen unteren vorstehenden Abschnitt umfaßt, der von ihr nach unten vorsteht und eine Quer schnittsfläche besitzt, die kleiner als die der Pad-Elektrode ist, und
eine Draufsichtsform des unteren vorstehenden Abschnitts aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine ungefähre Ellipse, ein ungefähres Polygon mit wenigstens einem Innenwinkel größer als 90 Grad und ein ungefähres Poly gon mit wenigstens einer abgeschrägten oder abgerundeten Ecke enthält.
ein Material des Unterlagefilms härter als das Elektrodenmaterial ist, während wenigstens ein Teil einer oberen Oberfläche des Pad-Abschnitts zum Verbinden mit einem Draht freiliegt,
eine Draufsichtsform der Pad-Elektrode aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine ungefähre Ellipse, ein ungefähres Polygon mit wenigstens einem Innen winkel größer als 90 Grad und ein ungefähres Polygon mit we nigstens einer abgeschrägten oder abgerundeten Ecke enthält,
die Pad-Elektrode eine aus dem Elektrodenmaterial herge stellte Hauptelektrodenschicht und eine obere Elektroden schicht, die mit einer oberen Oberfläche der Hauptelektroden schicht in Kontakt steht, enthält, und
eine Draufsichtsform der oberen Elektrodenschicht aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine ungefähre Ellipse, ein ungefähres Polygon mit wenigstens ei nem Innenwinkel größer als 90 Grad und ein ungefähres Polygon mit wenigstens einer abgeschrägten oder abgerundeten Ecke enthält.
ein Material des Unterlagefilms härter als das Elektrodenmaterial ist, während wenigstens ein Teil einer oberen Oberfläche des Pad-Abschnitts zum Verbinden mit einem Draht freiliegt,
eine Draufsichtsform der Pad-Elektrode aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine ungefähre Ellipse, ein ungefähres Polygon mit wenigstens einem Innen winkel größer als 90 Grad und ein ungefähres Polygon mit we nigstens einer abgeschrägten oder abgerundeten Ecke enthält,
die Pad-Elektrode eine aus dem Elektrodenmaterial herge stellte Hauptelektrodenschicht und eine untere Elektroden schicht, die an einer Unterseite der Hauptelektrodenschicht über ein dazwischenliegendes Verbindungsloch mit der Haupt elektrodenschicht verbunden ist, umfaßt, wobei das Verbin dungsloch einen Außenumfang besitzt, der so geformt ist, daß er in der Draufsicht entlang und in der inneren Umgebung des Außenumfangs der Hauptelektrodenschicht verläuft, und
eine Draufsichtsform wenigstens entweder der unteren Elektrodenschicht oder des Verbindungslochs aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine ungefähre Ellipse, ein ungefähres Polygon mit wenigstens einem Innen winkel größer als 90 Grad und ein ungefähres Polygon mit we nigstens einer abgeschrägten oder abgerundeten Ecke enthält.
ein Material des Unterlagefilms härter als das Elektrodenmaterial ist und wenigstens ein Teil einer oberen Oberfläche des Pad-Abschnitts zum Verbinden mit einem Draht freiliegt, wobei die Pad-Elektrode eine Belastungspuffer-Iso lationszwischenwand enthält, die den Pad-Abschnitt in einem Eckgebiet teilt.
ein Material des Unterlagefilms härter als das Elektrodenmaterial ist und wenigstens ein Teil einer oberen Oberfläche des Pad-Abschnitts zum Verbinden mit einem Draht freiliegt, wobei die Pad-Elektrode einen vorstehenden Bela stungspufferabschnitt enthält, der an einer Ecke der Pad- Elektrode vorsteht.
Claims (12)
eine Pad-Elektrode (101) mit einem im wesentlichen aus einem leitenden Elektrodenmaterial hergestellten Pad-Ab schnitt und einem Unterlagefilm (100a), der wenigstens an einer Unterseite und an einer Seitenwand des Pad-Abschnitts wenigstens einen Teil des Pad-Abschnitts bedeckt, umfaßt, wobei
ein Material des Unterlagefilms (100a) härter als das Elektrodenmaterial ist, während wenigstens ein Teil einer oberen Oberfläche des Pad-Abschnitts zum Verbinden mit einem Draht freiliegt,
eine Draufsichtsform der Pad-Elektrode (101) aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine unge fähre Ellipse, ein ungefähres Polygon mit wenigstens einem Innenwinkel größer als 90 Grad und ein ungefähres Polygon mit wenigstens einer abgeschrägten oder abgerundeten Ecke ent hält,
die Pad-Elektrode (101) einen unteren vorstehenden Ab schnitt (150) umfaßt, der von ihr nach unten vorsteht und eine Querschnittsfläche besitzt, die kleiner als die der Pad- Elektrode (101) ist, und
eine Draufsichtsform des unteren vorstehenden Abschnitts (150) aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine ungefähre Ellipse, ein ungefähres Polygon mit wenigstens einem Innenwinkel größer als 90 Grad und ein unge fähres Polygon mit wenigstens einer abgeschrägten oder abge rundeten Ecke enthält.
eine Pad-Elektrode (101) mit einem im wesentlichen aus einem leitenden Elektrodenmaterial hergestellten Pad-Ab schnitt und einem Unterlagefilm (100a), der wenigstens an einer Unterseite und an einer Seitenwand des Pad-Abschnitts wenigstens einen Teil des Pad-Abschnitts bedeckt, umfaßt, wobei
ein Material des Unterlagefilms (140a) härter als das Elektrodenmaterial ist, während wenigstens ein Teil einer oberen Oberfläche des Pad-Abschnitts zum Verbinden mit einem Draht freiliegt,
eine Draufsichtsform der Pad-Elektrode (101) aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine unge fähre Ellipse, ein ungefähres Polygon mit wenigstens einem Innenwinkel größer als 90 Grad und ein ungefähres Polygon mit wenigstens einer abgeschrägten oder abgerundeten Ecke ent hält,
die Pad-Elektrode (101) eine aus dem Elektrodenmaterial hergestellte Hauptelektrodenschicht und eine obere Elektro denschicht (201), die mit einer oberen Oberfläche der Haupt elektrodenschicht in Kontakt steht, enthält, und
eine Draufsichtsform der oberen Elektrodenschicht (201) aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine ungefähre Ellipse, ein ungefähres Polygon mit wenigstens einem Innenwinkel größer als 90 Grad und ein ungefähres Poly gon mit wenigstens einer abgeschrägten oder abgerundeten Ecke enthält.
eine Pad-Elektrode (101) mit einem im wesentlichen aus einem leitenden Elektrodenmaterial hergestellten Pad-Ab schnitt und einem Unterlagefilm (100a), der wenigstens an einer Unterseite und an einer Seitenwand des Pad-Abschnitts wenigstens einen Teil des Pad-Abschnitts bedeckt, umfaßt, wobei
ein Material des Unterlagefilms (100a) härter als das Elektrodenmaterial ist, während wenigstens ein Teil einer oberen Oberfläche des Pad-Abschnitts zum Verbinden mit einem Draht freiliegt,
eine Draufsichtsform der Pad-Elektrode (101) aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine unge fähre Ellipse, ein ungefähres Polygon mit wenigstens einem Innenwinkel größer als 90 Grad und ein ungefähres Polygon mit wenigstens einer abgeschrägten oder abgerundeten Ecke ent hält,
die Pad-Elektrode (101) eine aus dem Elektrodenmaterial hergestellte Hauptelektrodenschicht und eine untere Elektro denschicht (250), die an einer Unterseite der Hauptelektro denschicht über ein dazwischenliegendes Verbindungsloch (251) mit der Hauptelektrodenschicht verbunden ist, umfaßt, wobei das Verbindungsloch einen Außenumfang besitzt, der so geformt ist, daß er in der Draufsicht entlang und in der inneren Um gebung des Außenumfangs der Hauptelektrodenschicht verläuft, und
eine Draufsichtsform wenigstens entweder der unteren Elektrodenschicht (250) oder des Verbindungslochs (251) aus einer Gruppe ausgewählt ist, die einen ungefähren Kreis, eine ungefähre Ellipse, ein ungefähres Polygon mit wenigstens ei nem Innenwinkel größer als 90 Grad und ein ungefähres Polygon mit wenigstens einer abgeschrägten oder abgerundeten Ecke enthält.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-170332 | 2000-06-07 | ||
JP2000170332A JP4979154B2 (ja) | 2000-06-07 | 2000-06-07 | 半導体装置 |
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JP (1) | JP4979154B2 (de) |
KR (1) | KR100412179B1 (de) |
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- 2001-02-03 KR KR10-2001-0005269A patent/KR100412179B1/ko active IP Right Grant
- 2001-02-05 CN CNB2007101123969A patent/CN100557794C/zh not_active Expired - Lifetime
- 2001-02-05 CN CNB011032162A patent/CN1331223C/zh not_active Expired - Lifetime
- 2001-02-05 CN CN2009101689699A patent/CN101853830B/zh not_active Expired - Lifetime
-
2002
- 2002-04-26 HK HK02103148.3A patent/HK1041558A1/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2747139A4 (de) * | 2011-10-04 | 2015-08-05 | Sony Corp | Festkörperbildaufnahmevorrichtung, verfahren zur herstellung der festkörperbildaufnahmevorrichtung und elektronische vorrichtung |
Also Published As
Publication number | Publication date |
---|---|
US6417575B2 (en) | 2002-07-09 |
DE10059773B4 (de) | 2004-04-29 |
CN100557794C (zh) | 2009-11-04 |
KR100412179B1 (ko) | 2003-12-24 |
JP2001351920A (ja) | 2001-12-21 |
JP4979154B2 (ja) | 2012-07-18 |
CN1331223C (zh) | 2007-08-08 |
US20020005583A1 (en) | 2002-01-17 |
CN101853830A (zh) | 2010-10-06 |
HK1041558A1 (zh) | 2002-07-12 |
CN101083240A (zh) | 2007-12-05 |
CN101853830B (zh) | 2012-06-06 |
KR20010110634A (ko) | 2001-12-13 |
CN1327266A (zh) | 2001-12-19 |
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