DE10005494A1 - Electronic component used in semiconductor device comprises semiconductor chip having integrated circuits and metallic contact surfaces, and housing from which contact humps protrude - Google Patents

Abstract

An electronic component (1) comprises a semiconductor chip (3) having integrated circuits and metallic contact surfaces (2); and a housing (4) from which contact humps (7) protrude. The humps are connected to the contact surfaces of the chip via a layer (5) with metallic conducting pathways. The pathways are formed together with the contact humps as one-piece integral component (8) made from a pre-finished metallic foil. An independent claim is also included for the production of an electronic component comprising forming a metallic foil with contact humps as a one-piece integral component; producing a self-supporting support layer (10) with openings for the humps and through-holes (27); connecting the foil to the humps and the support layer to form a composite part; structuring the foil to form a conducting path pattern; and connecting the conducting pathways to the contact surfaces of the chip in the region of the through-holes of the support layer.

Description

The invention relates to an electronic component and a Method of manufacturing the component.

Electronic components are known which are a semiconductor Have chip with contact areas and bumps that are connected to the contact surfaces via conductor tracks. The Known electronic components are expensive to manufacture len.

It is an object of the invention to provide an easy to manufacture Provide electronic component and a method to indicate its manufacture.

This task is accomplished with the features of the independent claims che solved. Preferred developments of the invention result themselves from the dependent claims.

According to the invention, the conductor tracks are with bumps in the electronic component as a one-piece integral construction elements made of a prefabricated metallic foil side integrally arranged on the metallic foil Kon bumps trained. Therein means "one piece inte grail "that the conductor tracks are a complex structure from a structured metallic foil and arranged on it Form contact bumps, the compact, only with destruction ih Complex structure that can be dismantled into its individual parts represent ment. In this context also means "one-sided integral" that the metallic foil on an ih an integral structure with contact bumps on both sides forms.  

The solution according to the invention is the mutual posi the contact bumps are prefabricated and specified and not dependent on an otherwise necessary soldering process. Also the material of the contact bumps is freely selectable and can consist of the same material as the conductor tracks. It is also possible to use the one-piece before integral components in a housing for the electronic Component the position and the contact of the contact bumps Check on the metallic foil even before assembly or connection to a semiconductor chip is what again minimizes the risks in manufacturing and thus also reduced the committee. Furthermore, the shape of the Kon bumps freely selectable. The protruding from the housing Contact bumps of the electronic component can therefore ku gel-shaped, pin-shaped as contact balls or in the form be constructed by contact pins.

With the invention, an electronic component is created fen, where the position and contact between Kon bumps and metallic layer of metallic conductor do not clear the accidentalities of applying solder balls in openings of a support layer and is dependent the possibility of reduced contact between Contact bumps and metallic layer is avoided. Dar In addition, the invention reduces the risks of the melting of the solder balls to contact bumps and prevents shifting the position of the bumps.

In a possible embodiment of the invention, the front manufactured metallic foil with a carrier layer made of iso laminating plastic laminated to a composite component. The This composite component is dimensionally stable and can be self-supporting of the component can be used as part of the housing. While the first surface of the composite structure carrying the conductor track partly completely flat, protrude from the second insulating Surface of the composite component, the bumps out, wherein the two surfaces face each other.  

The contact bumps on the insulating side are in one given pattern on a common surface of the Layer of metallic conductor tracks arranged. The default Pattern of the contact bump corresponds to the contact connection surfaces of a circuit board or a conductor strip with which the electronic component is to be electrically connected. Around this connection of the electronic component on a lei Manufacture terplatte, the contact pads of the Circuit board with a solder layer in a solder wall bath see, so that the electronic component is then with NEN bumps on the contact pads of the conductor can be positioned and heated with the Contact pads is connected.

In a further possible embodiment of the invention are the conductor tracks and the contact bumps of the same size material, possibly made of copper or a copper alloy. This has the advantage that when soldering the Kontakthöc ker on a circuit board the shape and position of the contact hump does not change and still a reliable electrical Connection is made possible.

The contact bumps can be stamped on a metal band Elevations should be formed. Such surveys or ver Thickenings can be localized inexpensively and very precisely when rolling a copper strip into a thin metallic one Who stamped film through recesses in a profile roller the.

In another possible embodiment, the contacts are Bulges in a metallic foil. This has the advantage that a change in the thickness of the metalli cal foil is not required and therefore on a relatively simple way to realize conductor tracks with contact bumps the.  

In a further possible embodiment of the invention the contact bumps are electroplated onto a metallic foil based surveys. These surveys have the advantage that they are made of solid metal, while the metallic fo lie can be made extremely thin and thus the Mate material requirements can be minimized.

The bumps can also have protrusions on conductors web-thick thin-etched metal plate or a thin-etched Metal strip. When etching, however, a large part of the Material of the metal plate removed and can only by on agile recovery process from an etching bath be.

The carrier layer can be made of a polyimide, which is coated on one side is provided with an adhesive layer and has openings through which the prefabricated contact bumps are inserted through can exist, so that the adhesive layer and the metallic Layer can be assembled into a composite component. This composite component is self-supporting due to the self load-bearing carrier layer made of polyimide and gives it together built electronic component a high dimensional stability.

The semiconductor chip can by means of an insulating distance layer on the conductor-carrying first surface of the ver be fixed to the federal component. This is what the semiconductor chip does aligned that its contact surfaces with the breakthroughs correspond in the carrier layer. Even the distance Breakthroughs must be made at the points of contact of the layer Have semiconductor chips so that the connection area of the Lei lanes access to the contact areas of the semiconductor chips is provided.

Instead of a spacer layer, the electronic component also have spacers positioned so that they do not cover any of the breakthroughs of the composite component, so  that the access of the connection areas of the conductor tracks on the Contact areas of the semiconductor chip remains guaranteed.

The connection area of the conductor track can be diffused inhibiting layer and a bond layer where the bond layer can consist of a material that with the material of the contact surfaces on the surface of the half conductor chips intermetallic and / or eutectic connections conditions in the bonded state.

The bond layer can be gold or a gold alloy and the The contact surface layer can be aluminum or an aluminum alloy have alloy, since these two metals adhere well in ternetallic and / or low melting eutectic ver form bonds with each other. To diffuse the reason materials of the conductor tracks, which may have copper, by to prevent the gold of the bond layer from reaching the bond surface if possible, a diffuse before the bonding layer is applied sion-inhibiting layer made of nickel or a nickel alloy tion applied to the base material. This has the advantage that no copper reduces or prevents bonding different. Adequate diffusion inhibition can also be achieved by ei ne gold layer can be achieved, preferably over 1 micron is thick.

In a further possible embodiment of the invention the connection areas of the conductor tracks have at least one Transition area, a bond area and at least one Ab tear area. In the transition area, the Anschlussbe rich from the level of the metallic layer to the level the semiconductor surface is bent and in the bond area, which is followed by a bond with the contact surface of the Semiconductor chips possible.

The bonding is preferably only carried out when the Conductor in the connection area of the continuing conductor web is torn off. For this purpose, a demolition area is part of the  Connection area provided by a diminished Cross-section of the conductor track a quick and safe wiping guaranteed shortly before bonding. By applying Ul one can have a sound on the connection area of the conductor track ultrasound bonded connection between the contact surface and the connection area are generated. Through the use of Pressure and heating can be used instead of an ultrasound bond Connection a thermocompression bonded connection between the connection area of a conductor track and the contact area of the semiconductor chip.

To complete the housing, the composite component can be up to on the outstanding contact bumps with a sealing compound be surrounded. This potting compound also covers the half lead terchip at least on the facing the composite component Area, insofar as this is not covered by spacers or an ab layer is covered. Furthermore, the potting compound surrounds min at least in parts of the edges of the semiconductor chip. With this embodiment of the housing creates an electronic cal component that has a precise arrangement of the contact Höcker has a reliable contact with the Contact bumps to the conductor tracks within the housing is guaranteed.

The inventive method has the following procedural steps:
Production of a metallic foil with contact bumps in a given pattern as a one-piece integral component,
Producing a self-supporting carrier layer with openings for the contact bumps and openings, the arrangement and size of which is adapted to the contact areas on the semiconductor chip, connecting the metallic foil with contact bumps and the self-supporting carrier layer to form a composite component,
Structuring the metallic foil to a Leiterbahnmu ster, the conductor tracks with bumps and connection areas for electrical connection to the contact surfaces.

Instead of forming bumps with the help of solder balls in a final step when manufacturing an elec tronic component can in the electronics according to the invention component and the method for producing the same Positioning, attaching, checking and monitoring the contact Bump production right at the beginning with a prefabricated machine step. This will make the Montageri Risk is reduced since there is no melting of solder balls got to. It is also not a fitting of solder balls in prefabricated required openings from which they can easily move can push. In addition, there is no heating of the semiconductor chips to a solder melting temperature.

The following manufacturing steps can follow these process steps,
Coating the connection areas of the conductor tracks, application of a spacing layer or individual spacers on the conductor track side of the composite component and leaving openings free,
Applying a semiconductor chip to the spacing layer or the spacers,
Connecting the connection regions of the conductor tracks and the contact surfaces of the semiconductor chip in the region of the openings in the carrier layer, and
Potting the gaps between the composite component and the semiconductor chip, the openings and at least partially the edges of the semiconductor chip with a potting compound to form a housing. This results in a ready-to-use electronic component in a simple manner.

Making a metallic foil with bumps in a predetermined pattern as a one-piece integral component Menting can also be done using embossing technology. This will be a Metal plate, the thickness of which is slightly larger than the thickness  the final metallic foil is under pressure and heat pressed into a mold and onto the final foil dic ke brought, at the same time the bumps from form.

In a further possible embodiment of the method is the metallic foil with bumps in a pre given pattern as a one-piece integral component by means of Roll embossing carried out. To do this, a metal plate that is slightly thicker than the metallic foil, between a shaping roller and a pressure roller, where in the final thickness of the metallic foil and at the same time at a specified distance and at a specified distance order the bumps are formed. Instead of one Roll embossing or the above embossing technique can drop forging also take place, the advantage of Ge Drop forging is that the metallic plate we be considerably thicker than the metallic foil can to the one-piece integral component made of foil range and produce bump areas.

Another preferred implementation example for education a metallic foil with bumps in one benen pattern as a one-piece integral component is one galvanic deposition of contact bumps on a masked metallic foil. The metallic foil is included a film or photoresist coated only on those Make the metal free where galvanic Ab separation of contact bumps should take place. This procedure ren has the advantage that the tooling effort is extremely low and only separating and rinsing baths as well a DC power supply for galvanic deposition are to be made available.

A preferred alternative method for galvanic Ab divorce is the etching technique, which consists of a masked metallic plate the metallic foil and bumps  be etched, the metal plate being at least one thickness has the height of the metallic contact to be formed hump corresponds. The masking layer only protects them few areas before an etching attack, the contact bumps should. All other areas are except for the one you want etched down the film thickness.

Another possible implementation of the method includes Making a metallic foil with bumps in egg a given pattern as a one-piece integral component prefabricated contact bump elements by means of spot welding on the metallic foil. The tip can be the point welding electrode each from a bump element ge are formed so that the spot welding electrode gradually in quick succession from a supply of contact bumps fully automatically with their electrode tips new bump element is populated. This will make a quick application of the given pattern from Kontakthöc core realized. In a further training spot welding device can have multiple electrode tips in parallel Kon Pick up bump elements and with the metallic foil spot welding. With this, a precise integral Component are generated with bumps.

The contact bumps can also by arching the metalli film in the area of the contact bumps. This arching can be done by puncturing or by simple Hammer on a suitably prepared tool corresponding pricks take place, which is a deep drawing of Fittings comes close.

For the production of a self-supporting carrier layer with opening openings for the bumps and openings, their arrangement voltage and size of the contact areas on the semiconductor chip a punching technique can also be used, in the case of a plastic film or a plastic plate the openings and openings are punched out. After that you can  the self-supporting carrier layer thus produced and the metallic foil with contact bumps brought together in this way be that the bumps through the openings in the protrude self-supporting carrier layer. Subsequently becomes a composite by heat treatment or by gluing between self-supporting carrier layer and metallic foil manufactured.

Another method of making a self-supporting Backing layer that uses less material than the punch technology, represents the injection molding technique, which preferably is used in mass production.

Both the self-supporting carrier layer and the metallic one cal foil with contact bumps can be used as a metallic tape be produced in its side zones along the length edges have a perforation. With this perforation can adjust self-supporting base layer and metal lischer foil be facilitated. In addition, the band-shaped design with perforation the advantage that the Production of the composite component can be automated.

If the self-supporting backing is made of insulating art thermal treatment with the metal strip can be connected to form a composite component the carrier layer is coated on one side with adhesive, after which the metallic foil and the carrier layer adjusted and pressed together. This together pressing can be carried out by means of a pair of rollers, provided both the self-supporting carrier layer and the metallic foil in tape form.

After creating the bond between metallic foil with contact bumps and carrier layer, the metallic Fo be completed into a trace pattern that Conductor tracks with bumps and connection areas points, by applying a mask to a first  flat surface of the metallic foil of the composite component and by etching or atomizing the unmasked metallic Layer.

Applying a mask to the metallic foil of the ver collar component can be carried out by screen printing, especially the metallic side of the composite component is completely flat is. A screen printing varnish can therefore be done relatively quickly and accurately be applied.

For a more precise education and for a stronger miniature The conductor tracks can be applied by applying a mask the metallic foil of the composite component using photoresist technology. For this, a photoresist is applied to the Metal side of the composite component sprayed or spun and then exposed after pre-tempering. At the closing developments are those areas of metal exposed film of photoresist, which can then be etched away are. Before the etching, the photoresist is usually applied after the Develop stronger by curing at elevated temperatures networked.

Another preferred technique for applying a mask on the metallic foil of the composite component Deck technology through structured and, for example, one-sided adhesive foils. The structuring of the metallic fo lien can be done by cutting technology.

After structuring the metallic foil into a lei terbahnmuster are at least in connection areas of Lei tracks that come from a transition area with a bond area with a diffusion-inhibiting layer for example made of nickel or a nickel alloy and / or applied from a sufficiently thick gold layer, whose thickness is greater than 1 µm.  

After coating the connection areas of the conductor tracks will either have an insulating spacer layer on it the conductor track side of the composite component applied, namely while leaving the openings of the carrier layer. It can also individual spacers on the conductor track side of the Ver be positioned component, so that the through free breaks.

The production of such spacers can be done by Schablo Printing takes place, in which in a stencil on the Conductor side of the composite component is pressed, the material is pressed in. Keep your distance de material can have a silicone mass, while the ab stable layer from a punched out polyimide cushion can be formed.

The carrier layer of the composite component can be made of polyimide be placed as this material in addition to a minimum stiffness speed to support the metallic foil in an advantageous manner has residual flexibility. On the Ab stand made of a plastic mass or on the spaced plastic layer is attached closing, for example by gluing or by light Melting the plastic of the semiconductor chip applied. After fixing the semiconductor chip on the spacers or on the spacing layer the An lie closing areas of the conductor tracks and the contact surfaces of the Semiconductor chips in the area of the breakthroughs.

Through a connection process, for example using Ultra sound bonding, thermosonic bonding or thermocompression bonding become the connection areas of the conductor tracks and the contact surfaces of the semiconductor chip connected together. Final The edge region of the semiconductor chip becomes at least partially protected by a potting compound with the same time also the gaps between the composite component and half lead terchip can be filled out. For this, the bonded  Semiconductor chip with the already existing housing parts in a mold in an evacuated room. Then The liquefied casting compound, which is a thermoplastic, eats can be introduced into the mold.

Further advantages, features and possible applications of the Invention will now be described using an exemplary embodiment Reference to the accompanying drawings explained in more detail.

Fig. 1 shows a cross-sectional view of an electronic component according to the invention,

Figs. 2 to 10 illustrate the process steps for manufacturing the electronic component of Fig. 1,

Fig. 11 shows the mounted on a circuit board electronic component from Fig. 1 and

FIGS. 12 and 13 show cross sections through a further electronic component with a BGA package.

Fig. 1 shows a cross section through an electronic construction part 1 with an integrated circuits and contact surfaces 2 carrying semiconductor chip 3 and with a housing 4 having 4 protruding bumps 7 from the housing. The contact bumps 7 are electrically connected via a layer 5 arranged in the housing 4 with metallic conductor tracks 6 to the metallic contact surfaces 2 on a surface of the semiconductor chip 3 .

In this electronic component 1, the conductor tracks 6 illustrate with the bumps 7 piece integral components. 8 The integral components 8 are made of a prefabricated metal foil 9 with one end integrally disposed on the rule metalli film 9 bumps. 7 The metallic foil 9 with the contact bumps 7 is carried by a carrier layer 10 , which in this embodiment is laminated by means of an adhesive layer 29 to form a composite component 11 comprising at least one contact bump 7 , a conductor track 6 and a carrier layer 10 . This composite component 11 is connected to the semiconductor chip 3 via spacers 15 . The carrier layer 10 has an opening 27 , which enables the access of the line 6 with its metallic connection area 19 to the contact surface 2 of the semiconductor chip. The metallic connection area 19 , which extends in the opening of the carrier layer 10 , consists of three areas, from a transition area 20 , from a bond area 21 and from a tear-off area 22nd Since the finished component is shown in FIG. 1, the conductor track 6 in the bond area 21 is already connected to the contact area 2 of the semiconductor chip 3 . At the same time, the tear-off area 22 is already torn off, so that there is no connection of the conductor track 6 to the other conductor tracks. The transition region 20 of the conductor track 6 from the conductor track level to the surface of the semiconductor chip 3 is bent due to the bonding activities and is slightly curved.

Fig. 1 illustrates an advantage of this electronic component, since the geometry and shape of the bumps, in particular the spacing of the bumps from the rest of the housing, are freely selectable and does not depend on the deformation and melting behavior of otherwise usable solder balls. The bumps shown here are of simple geometry and consist of a cylindrical part and a hemispherical part, the cylindrical part merging directly into the conductor area and the hemispherical part protruding from the housing and with a printed circuit board, a conduction band or other Forwarding contacts can be connected.

Even the formation of contact or connection pins that protrude from the housing can be realized for such an electronic component based on the present invention. Surface treatments of the contact bumps as well as surface coatings of the same can also be implemented for such an electronic component. The contact bumps 7 can thus be tin-plated, nickel-plated, gold-plated or coated with solder material in order to make an ohmic contact with subsequent circuit structures.

Figs. 2 to 10 show the possible process steps for fabricating an electronic component.

Fig. 2 shows a cross section through a metallic foil 9 , which is equipped with bumps 7 , so that a one-piece integral component 8 is formed. In this embodiment, the metallic foil 9 is made of copper or a copper alloy and has a thickness of 15 μm to 20 μm. The height of the contact bumps 7 which protrude from the plane of the metallic foil 9 is between 250 μm and 300 μm. In this embodiment, the contact bumps 7 were galvanically deposited on the metallic foil 9 . During the galvanic deposition protected those Foliebe rich, which has no bumps, a wax cover not shown here, which only releases those areas in which the bumps 7 are to grow.

Other possible methods of producing such bumps 7 on egg ner metallic foil 9 are a spot welding process with which individual bumps 7 are placed as electrodes on the metallic foil 9 and are melted by a short current surge with the metallic foil. Furthermore, it is possible to represent such contact bumps 7 by stamping technology or by rolling processes in form rollers.

With considerable loss of material, one of the one-piece component 8 can also be produced by etching. For this purpose, the contact bump 7 are equivalent from a copper plate having a thickness of at least the height of the sum of the thicknesses of the metallic foil 9 and the Hö, the portions of the bumps 7 covered. The remaining surfaces of the metal plate are then set down to a thickness of the metallic foil 9 .

FIG. 3 shows a cross section through a carrier layer 10 made of polyimide with an adhesive layer 29 which have openings 40 through which the contact bumps 7 of the component 8 from FIG. 2 can be inserted. Furthermore, the carrier layer 10 has an opening 27 , which is arranged so that it allows access to a metallic connection region 19 of the conductor track 6 on a contact surface egg nes semiconductor chips in the final assembly of the carrier layer 10 on the metallic foil 9 .

FIG. 4 shows a cross section through a composite element 11 , which is formed after the component 8 in FIG. 2 is pressed together with the carrier layer 10 from FIG. 3. The thus possibly arising composite member 11 has substantially a conti nuous metallic foil 9 and a backing layer 10, through which protrude the bumps. 7

Fig. 5 illustrates the application of a masking layer 41 onto the metallic foil 9 of the composite member 11 of FIG. 4. Then, the not covered by the masking layer 41 metal film 9 is selectively etched, so that the thereby forming metallic interconnects clock bump the Kon 7 wear and that there are connection areas 19 for contacting a contact surface 2 of the semiconductor chip 3 .

Fig. 6 5 shows a cross section of the composite member 11 of FIG. After etching and after removal of the layer 41 approximately Maskie. The composite element 11 now has finally structured conductor tracks 6 with bumps 7 and openings 27 in the carrier layer.

After this structuring of the metallic foil 9 to form a conductor track pattern, a diffusion-inhibiting layer with nickel in a thickness of 50 nm to 200 nm and a gold layer in a thickness of 200 nm to 1000 nm can be applied locally selectively in connection regions of the conductor tracks. With gold layer thicknesses greater than approximately 1000 nm, the diffusion-inhibiting layer made of nickel or a nickel alloy can be omitted.

FIG. 7 shows a cross section through the composite element 11 , wherein spacers 15 made of insulating material have been applied to the conductor track side of the composite component 11 , with the openings 27 being left free . From the spacer 15 are made in this embodiment from a silicon mass. This silicone compound has the advantage that it compensates for the thermal expansion differences between the verbun delement 11 and a semiconductor chip to be applied later due to its flexibility and elasticity.

FIG. 8 shows a cross section through the composite element 11 from FIG. 7, a semiconductor chip 3 being applied to the spacers 15 . The semiconductor chip 3 positioned on the spacers 15 is positioned with a contact area 2 exactly above the opening 27 .

Fig. 9 shows a cross section through the connecting element 11 with the semiconductor chip 3 from Fig. 8, which is turned over for further Bear processing, so that the semiconductor chip 3 forms the underside and the bumps 7 protrude on the top over the carrier layer 10 . In this position, the bond area 21 of the connection area 19 is connected to the contact area 2 of the semiconductor chip 3 . The contact surface 2 of the semiconductor chip 3 is made in this example from an aluminum alloy with 2% silicon and 0.5% copper, the low-melting eutectic compound and / or intermetallic compounds with the gold coating of the connection region 19 when ultrasonically bonded. Instead of ultrasonic bonding, thermocompression bonding or thermosonic bonding can also be used, in which the bonding area 21 of the connection area 19 of the conductor track 6 is heated to a temperature above the eutectic melting temperature of the metallic component by means of a heated stylus, in particular by pressing onto the contact surface 2nd

Fig. 10 shows the finished electronic component according to the invention after encapsulation in a mold and after the Ver pour with an electrically insulating potting compound 23 made of thermoplastic material, preferably under vacuum.

Fig. 11 shows the finished electronic component according to the invention from FIG. 10, which is space-saving, for example, positioned on egg ner multi-layer wiring board 24 and the ground plate via contact pads 14 of the wiring board 24 having interconnect layers 36 to 38 of the multilayer printed circuit 24 is connected. In this embodiment, the contact pads 14 of the Leiterbahnplat te 24 are coated in a Lötschwallbad with a solder layer, while the bumps 7 of the electronic component are wetted with a flux, so that after heating an intimate electrically conductive solder connection with the contact pads 14 of the multilayer Circuit board 24 is formed.

A further embodiment of an electronic component is shown in FIGS 12 and 13, wherein Figure 12 cuts a cross through a component with a BGA (b all g rid a rray) -... The housing and 13 is such mounted on a printed circuit board component shows.

As FIG. 12 shows, the electronic component 1 consists of a housing 4 which partially surrounds the edges 28 of a semiconductor chip 3 . Spacers 15 carry a metallic layer 5 on which a carrier layer 10 made of plastic is fixed by means of an adhesive layer 29 , so that the metallic layer 5 with its conductor tracks 6 is held plane-parallel in a predetermined distance from the spacer 15 to the surface of the semiconductor chip 3 can be. The carrier layer 10 has an opening 27 which is arranged on a contact surface 2 on the surface of the semiconductor chip 3 . The breakthrough 27 gives a penetration of a metallic connection region 19 of the conductor track 6 to a contact surface 2 of the semiconductor chip 3 . In the opening 27 by means of a suitable tool ge the metal terminal area 19 of the conductor 6 are bonded to the contact surface 2 of the semiconductor chip 3 by a bonding method. The carrier layer 10 also has openings which correspond to individual conductor tracks 6 of the metallic layer 5 . In these openings, solder balls 30 to 35 are introduced, which are electrically conductively connected to the corresponding conductor tracks 6 by heating the entire structure and melting the solder balls 30 to 35 . However, this connection is not always successful, as is demonstrated by the solder balls 31 and 33 .

In the electronic component 1 , the solder balls 30 to 35 are introduced after the completion thereof. It can happen that the solder balls, such as solder balls 31 and 33 , do not form a complete connection with the underlying conductor track in the subsequent melting process. In this case, there is a reduced electrical contact with the semiconductor chip 3 .

It can also happen that the solder ball 30 forms a desired uniform correct contact bump, while the solder ball 35 is deformed such that it forms an offset relative to the opening in the carrier layer 10 , which the later mounting of the electronic component 1 on a conductor track plate or on a conduction tape can complicate.

Fig. 13 shows the electronic component 1 of Fig. 12 in a positioning on a multilayer printed circuit board, the printed circuit board 24 having three line levels 36 , 37 and 38 , which are electrically connected to the solder bumps 30 to 35 . For this purpose, the electronic construction part of FIG. 12 is first turned over and then heated to the soldering temperature with its bumps 30 to 35 on the contact pads of the conductor plate 24 dissolved.

Due to the use of solder balls 30 to 35 , the height of the contact bumps 7 which protrude from the housing 4 is limited to the diameter of the solder balls 30 to 35 . Thus there is no possibility of variation for the shape of the contact hump.

Reference list

1

Electronic component

2

Contact areas on the semiconductor chip

3rd

Semiconductor chip

4

casing

5

Layer of metallic conductor tracks

6

Conductor track

7

Contact hump

8th

integral component

9

metallic foil

10th

Carrier layer

11

Composite component

12th

first surface carrying a conductor track

13

insulating second surface with outstanding contact bumps

14

Contact pads of a circuit board

15

Spacers

19th

Connection area

20th

Transition area

21

Bond area

22

Demolition area

23

Sealing compound

24th

Circuit board

25th

metallic foil

26

Metal strap

27

breakthrough

28

Edges of the semiconductor chip

29

Adhesive layer

35

Solder balls

38

Management levels

40

openings

41

Masking

Claims (44)

1. Electronic component ( 1 ) with an integrated circuit and metallic contact surfaces ( 2 ) having semiconductor chip ( 3 ) and with a housing ( 4 ) with from the housing ( 4 ) projecting bumps ( 7 ) via a in the housing ( 4 ) arranged layer ( 5 ) with metallic conductor tracks ( 6 ) with the contact surfaces ( 2 ) of the semiconductor chip ( 3 ) are electrically conductively connected, the conductor tracks ( 6 ) together with the bumps ( 7 ) as one-piece integral components ( 8 ) from one Before manufactured metallic foil ( 9 ) with preferably one side integrally on the metallic foil ( 9 ) angeord Neten bumps ( 7 ) are formed. 2. The electronic component (1) according to claim 1, characterized in that the preformed metallic film (9) carrier layer with a Trä (10) is laminated insulating resin to form a composite component (11), wherein the composite construction part (11) is a component of the housing ( 4 ) and a conductor-carrying first surface ( 12 ) and an insulating de second surface ( 13 ), from which the Kontakthöc ker ( 7 ) protrude, and wherein the second surface ( 13 ) of the first surface ( 12 ) is opposite . 3. Electronic component ( 1 ) according to claim 1 or 2, characterized in that the contact bumps ( 7 ) are arranged in a predetermined pattern on a common surface of the layer ( 5 ) metallic conductor tracks ( 6 ), the predetermined pattern of the Contact bumps ( 7 ) with contact connection surfaces ( 14 ) of a printed circuit board ( 24 ) or a conductor band corresponds with which the electronic construction part ( 1 ) is to be electrically connected. 4. Electronic component ( 1 ) according to one of the preceding claims, characterized in that the conductor tracks ( 6 ) and the contact bumps ( 7 ) are made of the same chemical material, preferably copper or a copper alloy. 5. Electronic component ( 1 ) according to any one of the preceding claims, characterized in that the contact bumps are formed as a protrusion on a metal strip ( 26 ). 6. Electronic component ( 1 ) according to one of the preceding claims, characterized in that the contact bumps are formed as bulges brought into a metallic foil. 7. Electronic component ( 1 ) according to one of the preceding claims, characterized in that the contact bumps ( 7 ) are formed as on a metallic foil ( 9 ) galvanized elevations. 8. Electronic component ( 1 ) according to one of the preceding claims, characterized in that the contact bumps are formed as projections of a thinly etched metal plate or a thinly etched metal strip on a conductor track. 9. Electronic component ( 1 ) according to any one of the preceding claims, characterized in that the carrier layer ( 10 ) has polyimide. 10. Electronic component ( 1 ) according to one of the preceding claims, characterized in that the semiconductor chip ( 3 ) is fixed by means of at least one insulating spacer layer on the conductor-carrying he most surface ( 12 ) of the composite component ( 11 ). 11. Electronic component ( 1 ) according to one of claims 1 to 9, characterized in that the semiconductor chip ( 3 ) by means of insulating spacer ter ( 15 ) on the conductor-carrying first surface ( 12 ) of the composite component ( 11 ) is fixed. 12. Electronic component ( 1 ) according to claim 10 or 11, characterized in that an adhesive layer ( 29 ) is arranged between the semiconductor chip ( 3 ) and the spacers ( 15 ) or between the semiconductor chip ( 3 ) and the spacer layer. 13. Electronic component ( 1 ) according to one of the preceding claims, characterized in that a connection region ( 19 ) of the conductor track ( 6 ) and / or the contact bumps ( 7 ) are coated with a diffusion-inhibiting layer and with a bond layer. 14. Electronic component ( 1 ) according to claim 13, characterized in that the bonding layer comprises a material which with the mate rial of the contact surfaces ( 2 ) on the surface of the semiconductor chips ( 3 ) in the bonded state, an intermetallic cal and / or eutectic Connections. 15. Electronic component ( 1 ) according to claim 13 or 14, characterized in that the bond layer gold and the contact surface layer has aluminum or an aluminum alloy. 16. Electronic component ( 1 ) according to any one of claims 13 to 15, characterized in that the diffusion-inhibiting layer has nickel or a nickel alloy or a gold layer in particular of more than 1 micron thickness. 17. Electronic component ( 1 ) according to one of claims 2 to 16, characterized in that the carrier layer ( 10 ) has openings ( 27 ) which are arranged above the contact surfaces ( 2 ) on the surface of the semiconductor chip ( 3 ), that a penetration of metallic connection areas ( 19 ) of the conductor tracks ( 6 ) on the contact surfaces ( 2 ) of the semiconductor chip ( 3 ) is free. 18. Electronic component ( 1 ) according to claim 17, characterized in that the metallic connection areas ( 19 ) of the conductor tracks ( 6 ) have at least one transition area ( 20 ), a bonding area ( 21 ) and a tear-off area ( 22 ). 19. Electronic component ( 1 ) according to claim 17 or claim 18, characterized in that the passage of the connection region ( 19 ) of a conductor track ( 6 ) on a contact surface ( 2 ) of the semiconductor chip ( 3 ) is formed as an ultrasound bonded connection is. 20. Electronic component ( 1 ) according to one of claims 17 or 18, characterized in that the passage of the connection region ( 19 ) of a conductor track ( 6 ) on a contact surface ( 2 ) of the semiconductor chip ( 3 ) is designed as a thermocompression-bonded connection. 21. Electronic component ( 1 ) according to one of claims 2 to 20, characterized in that the composite component ( 11 ) except for the projecting con tact bumps ( 7 ) and the semiconductor chip ( 3 ) at least on the composite component ( 11 ) facing surface of Semi-conductor chips ( 3 ), which is not covered by spacers ( 15 ) or a spacer layer, and is surrounded at least in partial areas of the edges ( 28 ) of the semiconductor chip ( 3 ) by an insulating casting compound ( 23 ). 22. A method for producing an electronic construction part (1) faces with an integrated circuit and contact (2) carrying the semiconductor chip (2) and clock-bumps with a housing (4) from the housing (4) outstanding Kon (7), which a layer ( 5 ) of metallic conductor tracks ( 6 ) arranged in the housing ( 4 ) is electrically connected to the metallic contact surfaces ( 2 ) on one surface of the semiconductor chip ( 3 ), the method comprising the following method steps:

• - Manufacture of a metallic foil ( 9 ) with con tact bumps ( 7 ) as a one-piece integral component ( 8 ),
• - Producing a particularly self-supporting carrier layer ( 10 ) with openings for the contact bumps ( 7 ) and with openings ( 27 ), the arrangement and size of which is adapted to the contact areas ( 2 ) on the semiconductor chip ( 3 ),
• - Connect the metallic foil ( 9 ) with the con tact bumps ( 7 ) and the carrier layer ( 10 ) to form a composite component ( 11 ),
• - Structuring the metallic foil ( 9 ) to a conductor track pattern, the conductor tracks ( 6 ) with contact bumps ( 7 ) and with connection areas ( 19 ) for electrical connection to the contact surfaces ( 2 ),
• - Connecting the connection areas ( 19 ) of the conductor tracks ( 6 ) with the contact surfaces ( 2 ) of the semiconductor chips ( 3 ) in the area of the openings ( 27 ) of the carrier layer ( 10 ).

23. The method according to claim 22, characterized in that the method further comprises the following method steps:

• - Refining connection areas ( 19 ) of the printed conductors ( 6 ),
• - Applying a spacing layer or individual spacers ( 15 ) on the conductor track side of the composite component ( 11 ) while leaving the openings ( 27 ) free,
• - Application of a semiconductor chip ( 3 ) on the spacing layer or the spacers ( 15 ),
• - Potting the spaces between the composite component ( 11 ) and the semiconductor chip ( 3 ), the openings ( 27 ) and at least partially the edges ( 28 ) of the semiconductor chip ( 3 ) with a potting compound ( 23 ) to form a housing ( 4 ).

24. The method according to claim 22 or claim 23, characterized in that the manufacture of the metallic foil ( 9 ) with the contact bumps ( 7 ) is carried out by means of embossing technology. 25. The method according to claim 22 or claim 23, characterized in that the production of the metallic foil ( 9 ) with the con tact bumps ( 7 ) is carried out by means of roller stamping. 26. The method according to claim 22 or claim 23, characterized in that the production of the metallic foil ( 9 ) with the con tact bumps ( 7 ) by means of galvanic deposition of the contact bumps ( 7 ) on the provided with a masking NEN metallic foil ( 9 ) . 27. The method according to claim 22 or claim 23, characterized in that the manufacture of the metallic foil ( 9 ) with the con tact bumps ( 7 ) by means of an etching technique from a mas marked metallic plate. 28. The method according to claim 22 or claim 23, characterized in that the manufacture of the metallic foil ( 9 ) with the con tact bumps ( 7 ) by welding prefabricated con tact bump elements on the metallic foil ( 9 ) it follows. 29. The method according to claim 22 to claim 23, characterized in that the manufacture of the metallic foil ( 9 ) with the con tact bumps ( 7 ) by arching the contact bumps into the metallic foil ( 9 ). 30. The method according to any one of claims 22 to 29, characterized in that the metallic foil ( 9 ) is produced as a metallic band with perforation on the longitudinal edges. 31. The method according to any one of claims 22 to 30, characterized in that the openings for the bumps ( 7 ) and the openings ( 27 ) in the carrier layer ( 10 ) are produced by means of a stamping technique. 32. The method according to any one of claims 22 to 30, characterized in that the openings for the bumps ( 7 ) and the openings ( 27 ) in the carrier layer ( 10 ) by means of injection molding technology in the manufacture of the carrier layer ( 10 ). 33. The method according to any one of claims 22 to 32, characterized in that the connection of the metallic foil ( 9 ) with the con tact bumps ( 7 ) and the self-supporting carrier layer ( 10 ) to a composite bag ( 11 ) by means of an adhesive technique, wherein in particular the carrier layer ( 10 ) is coated on one side with adhesive. 34. The method according to any one of claims 22 to 33, characterized in that the carrier layer ( 10 ) is provided as a tape with at least one perforation on the edges. 35. The method according to claim 30 and according to claim 34, characterized in that the connection of the metal foil ( 9 ) provided as a perforated band and the carrier layer ( 10 ) provided as a perforated band coated with adhesive is carried out by rolling the two bands between a pair of rollers . 36. The method according to any one of claims 22 to 35, characterized in that the structuring of the metallic foil ( 9 ) to a conductor track pattern, the conductor tracks ( 6 ) with Kontakthöc core ( 7 ) and connection areas ( 19 ) by applying a mask the metallic foil ( 9 ) of the composite component ( 11 ) and by subsequent etching or sputtering of the non-masked areas of the metallic foil ( 9 ). 37. The method according to claim 36, characterized in that the application of a mask to the metallic foil ( 9 ) is carried out by means of screen printing. 38. The method according to claim 36, characterized in that the application of a mask to the metallic foil ( 9 ) is carried out by means of photoresist technology. 39. The method according to claim 36, characterized in that the application of a mask on the metallic foil ( 9 ) by means of masking through structured foils it follows. 40. The method according to any one of claims 23 to 39, characterized in that the application of a spacing layer or an individual spacer ( 15 ) on the conductor track side of the composite component ( 11 ) is carried out by means of stencil printing. 41. The method according to claim 40, characterized in that a silicone mass is set for individual spacers ( 15 ). 42. The method according to any one of claims 22 to 41, characterized in that a punched-out bottom as a spacer layer lyimide cushion is used.   43. The method according to any one of claims 22 to 42, characterized in that polyimide is used as the carrier layer ( 10 ). 44. The method according to any one of claims 22 to 43, characterized in that the potting of the spaces between the composite component ( 11 ) and the semiconductor chip ( 3 ) of the openings ( 27 ) and at least partially the edges of the semiconductor chip ( 3 ) with a potting compound to form a housing ( 4 ) done under vacuum.