CN87106576A - 激光划线装置和方法 - Google Patents

激光划线装置和方法 Download PDF

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CN87106576A
CN87106576A CN87106576.2A CN87106576A CN87106576A CN 87106576 A CN87106576 A CN 87106576A CN 87106576 A CN87106576 A CN 87106576A CN 87106576 A CN87106576 A CN 87106576A
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篠原久人
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Semiconductor Energy Laboratory Co Ltd
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Abstract

叙述了一种激光划线装置和方法。在该装置中，用激光束照射在基片上形成的薄膜，该激光束聚焦于薄膜的某一有限部分上，以移除该部分，从而形成一个沟槽。在聚焦激光束之前，先将用以清除一部分在基片上形成的薄膜的激光束切除其边缘部分。由于这个清除工序而抑了球面象差。

Description

本发明是关于激光划线装置和方法。
加工液晶器件所用的透明导电薄膜除采用光刻法外，用激光加工也是众所周知的。这类激光加工中钇铝柘榴石激光器已被采用作为激光光源，举例说该激光的波长为1.06微米。在这类激光加工过程中，通过使用一系列呈点状激光束按规定的线条形状连续照射到待加工的基片上而形成一条沟槽。因此，必须根据待加工透明导电薄膜例如热导率的特性，控制诸如激光束的能量密度、扫描速率等工艺条件。这样，当进行工业化大量生产时，在不牺牲产品技术规格的情况下是难以提高产品产量的。此外，对应于波长为1.06微米，每个光子的能量为1.23电子伏特的激光能比起代表诸如氧化锡、氧化铟、氧化铟锡、氧化锌等普通透明导电薄膜的3至4电子伏特的禁带宽度范围来说是非常小的。再者，在采用Q开关操作的激光加工过程中，必须以30至60厘米/分的扫描速率、用每一光点为0.5至1瓦进行扫描，该激光束截面直径为50微米、焦距为40毫米、脉冲频率为3千赫和脉冲宽度为60毫微秒。由于能量如此之大，因而可能会使于其上形成透明导电薄膜的衬底层产生裂纹，使器件损坏。衬底表面的损坏呈鳞状。
此外，和现有技术的激光加工划不出一系列间距为10至50微米的细沟槽，由于划出的沟槽不完善，因而激光加工之后还需要实施刻蚀工序。另外，在各激光照射的过程中必须监控激光照射的条件，使其与激光器输出的波动情况尤其在起始输出能量的波动情况相适应。本发明是对昭59-211，769号日本专利申请书所作的一个改进。
因此本发明的一个目的是提供一种能彻底清除基片上一部分薄膜而不致损及衬底表面的激光划线装置和激光划线方法。
因此本发明的一个目的是提供一种球面象差受抑制的激光划线装置和激光划线方法。
为达到上述目的，激光划线装置采用了扁形激光束其横截面宽为20至200微米例如取150微米而长为10至60厘米例如取30厘米，用此激光束同时在待加工的基片上照射出和刻划出一线条。该激光束最好是波长小于400毫微米，以小于50毫微米的脉冲宽度脉动。与现有技术相比，利用这种脉冲激光束可以将光能吸收效率提高99倍以上，从而使加工时间缩短十分之九以上。
此外，根据本发明，激光束的边缘部分被消除了，因而使球面象差效应减少，因此，即使想在基片上划出长30厘米、宽10至30微米例如取20微米的沟槽，也能使基片上加工过的部分的边缘分明利索并可获得清晰的周界轮廓。
图1是本发明激光划片装置的横向剖视图。
图2（A）至2（D）是说明激光束横截面的示意图。
图3（A）至3（B）是按本发明进行加工的基片的平面图和侧视图。
图4（A）和4（B）是本发明的另一个实施例。
参看图1，这是激光加工装置的示意图。图中，激光加工装置包括一个基片夹持器和一个激光辐射装置。激光辐射装置包括Questec公司出售的脉冲（eximer）激光器1（KrF，波长＝248毫微米;禁带宽度＝5.0电子伏特）、扩展器2、缝隙3和柱面透镜4。激光器1所发射的横截面为16毫米×20毫米、功率密度为5.6×10-12毫焦耳/平方毫米的激光束20（图2（A））由扩展器2在垂直于图1图面方向上加以扩展。经扩展后横截面为16毫米×300毫米的激光束21（图2（B），其周边（边缘）通过缝隙3加以切除。边缘切除过横截面为2毫米×300毫米的激光束22（图2（C）聚焦在铺设于底片25上的基片10上形成的例如氧化锡薄膜（禁带宽度＝3.5电子伏特）之类的透明导电薄膜11上。在薄膜11上激光束的宽度为20微米。底片25可在X和Y方向上移动，因而激光束可被聚焦到所希望的位置上。
缝隙3的宽度视具体情况而定。但此宽度应这样选择使得激光束能聚焦到其中可以将球面象差忽略不计的宽度。即透镜的性能间接地确定聚焦的激光束的宽度。激光束的脉冲持续时间小于50毫微秒，例如取20毫微秒，重复频率为1至100赫，例如取10赫。根据本实验，用10赫/脉冲的脉冲激光束进行激光划线就能在第五层透明薄膜上划出完善的沟槽，而且只在0.8分钟的加工时间内即可生产出多个分割了宽为20微米而间距为15毫米的薄膜元件。经过超声波净化处理之后，衬底表面没有损坏。整个过程只用了5至10分钟的时间。
沟槽的形成可使待加工的基片在垂直于沟槽的方向上作间歇性地移动的过程中重复进行。用此方法可形成如图3所示的多个30厘米长、20微米宽每间隔之间间距为400微米的平行沟槽。即，激光束每次照射一个脉冲后，将基片朝垂直于沟槽的方向移动15毫米。当然，通过选择地移动基片，在其上毗邻的照射的部分设置成不带间距，则可形成多个带有每间隔之间间距为400微米的沟槽的宽为20微米的条状电极。
用与上述实验类似的方法在基片上形成1000埃厚掺氢或氟的非单晶半导体薄膜，再用波长小于400毫微米、脉冲宽度为10毫微秒、平均输出功率为2.3毫焦耳/平方毫米的脉冲激光束进行激光划线，将薄膜切割成多个元件。结果，衬底表面没有损伤。
参看图4（A）和（B），这是本发明的另一个实施例。在此实施例中，制成超导体线圈。在氧化镁（MgO）制成的基片31的（100）平面上形成带有（001）平面的超导体薄膜。该超导体薄膜由通常以分子式为ABCu3O6-8表示的陶瓷制成，其中A为一个或多个稀土元素而B为一个或多个碱土金属，例如YBa2Cu3O6-8。用与上一个实施例所述的类似方法划出一系列沟槽1-1、1-2、1-3、r-1、r-2、r-3、t-1、t-2、t-3、b-1、b-2和b-3。这样做时，应在激光器1和扩展器2之间或在扩展器2与缝隙3之间设置一对屏幕之类的塞孔装置，以便通过切断激光束横截面端部改变激光束横截面的长度。即，划出沟槽1-1之后，通过端部的切除缩短激光束的长度，然后划出沟槽1-2。再以同样的方式顺次划出其余的沟槽，使它们同一方向成直线排列。接着将基片31转动90度。划出沟槽t-1至t-3。这样就把超导体线圈加工成螺旋形线圈。
本发明不应受上述具体实施例的限制，熟悉专业的人士可以对这些实施例做出各种各样各良和变化。例如，可以在光束扩展器和待加工的表面之间装设一个集成光学器件、一聚光透镜、一投光镜等，使光学系统更实用。

Claims (15)

1、一种激光划线装置，其特征在于，该装置包括：
一脉冲(eximer)激光器；
一激光束扩展器，用以扩展所述脉冲激光器发射出的激光束；
一塞孔装置，用以从经扩展后的激光束切掉一边缘部分；
一凸透镜，用以将通过所述塞孔装置的激光束聚焦；和
一基片夹持器，用以利用该聚焦光束加工一基片时，将基片夹持在该加工位置处。
2、按照权利要求1所述的装置，其特征在于，所述凸透镜将所述激光束呈一直线状地聚焦到所述基片上。
3、按照权利要求1所述的装置，其特征在于，所述扩展器主要地在一个方向上对来自所述脉冲激光器的激光束进行扩展。
4、按照权利要求3所述的装置，其特征在于，所述凸透镜是个柱面透镜，所述透镜将经扩展的激光束聚焦在垂直于扩展方向所对应的方向上。
5、如权利要求1的装置，其特征在于，所述基片夹持器可在垂直于激光束传输方向的方向上移动。
6、一种在形成在基片上的薄膜上进行划线的方法，其特征在于，该方法包括：
扩展来自脉冲（eximer）激光器的激光束;
从经扩展后激光束切断一边缘部分;
将切断边缘后成形的激光束聚焦到所述基片上，并清除所述薄膜的经照射部分。
7、按照权利要求6所述的方法，其特征在于，所述脉冲激光器发射的激光束，其波长小于400毫微米。
8、按照权利要求7所述的方法，其特征在于，通过利用清除所述薄膜的相应部分所形成的沟槽将所述薄膜进行切割而分成多个分离的元件。
9、按照权利要求7所述的方法，其特征在于，扩展工序只在一个方向上进行。
10、按照权利要求9所述的方法，其特征在于，经扩展后的激光束在垂直于扩展方向所对应的方向上进行聚焦。
11、按照权利要求10所述的方法，其特征在于，在所述基片朝聚焦方向上移动时在所述基片上重复地进行的激光束聚焦工序以便在所述基片上划出多个沟槽。
12、按照权利要求6所述的方法，其特征在于，所述激光束是脉冲的。
13、按照权利要求12所述的方法，其特征在于，脉冲激光束的脉冲持续时间小于50毫微秒。
14、按照权利要求6所述的方法，其特征在于，所述扩展工序主要是相对于一个方向实施的，且切除了边缘部分的激光束变成截面呈一直线状的扁形光束。
15、按照权利要求6所述的方法，其特征在于，该方法还包括切断所述截面呈一直线状的激光束的边缘部分的工序。
CN87106576A 1986-09-26 1987-09-25 激光划线装置和方法 Expired CN1018621B (zh)

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JP61229252A JPS6384789A (ja) 1986-09-26 1986-09-26 光加工方法
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