CN201497610U - Surface acoustic wave pressure sensor - Google Patents
Surface acoustic wave pressure sensor Download PDFInfo
- Publication number
- CN201497610U CN201497610U CN2009201907699U CN200920190769U CN201497610U CN 201497610 U CN201497610 U CN 201497610U CN 2009201907699 U CN2009201907699 U CN 2009201907699U CN 200920190769 U CN200920190769 U CN 200920190769U CN 201497610 U CN201497610 U CN 201497610U
- Authority
- CN
- China
- Prior art keywords
- pressure
- acoustic wave
- surface acoustic
- substrate
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model discloses a surface acoustic wave pressure sensor with small volume and high sensitivity. The surface acoustic wave pressure sensor comprises a top cap, and a base with two metal electrodes penetrating through, wherein the top cap is hermetically mounted on the base, a pressure conductivity through hole is formed on the base, a fluid diaphragm is hermetically fixed on the inner surface of the base, the fluid diaphragm covers the pressure conductivity through hole, a closed chamber is formed among the base, the top cover and the fluid diaphragm, a long strip shaped substrate is fixed on the fluid diaphragm, the substrate stretches over the pressure conductivity through hole, a surface acoustic wave pressure sensing resonator, a surface acoustic wave standard resonator and two bonding pads are fixed on the substrate, the surface acoustic wave pressure sensing resonator rightly faces the central part of the pressure conductivity through hole, two ends of the surface acoustic wave pressure sensing resonator and two ends of the surface acoustic wave standard resonator are respectively connected with the two bonding pads, the two metal electrodes are positioned at one end inside the closed chamber and respectively connected with two bonding pads, and the frontal projected area of a pressure sensitive region on the substrate is smaller than that of the cross section of the pressure conductivity through hole.
Description
Technical field
The utility model relates to a kind of surface acoustic wave pressure sensor.
Background technology
Surface acoustic wave pressure sensor can be used to detect the pressure of machinery or fluid, the pressure of required detection acts on the Piezoelectric Substrates, make substrate generation deformation, then the speed propagated on substrate of surface acoustic wave changes, cause the resonance frequency of SAW (Surface Acoustic Wave) resonator to change, can obtain acting on force value on the substrate by the variation that detects frequency.Be difficult to contact or during the inside of mobile object, surface acoustic wave sensor is owing to the advantage of its passive and wireless gains great popularity when being in by measuring pressure.
At present most on the market surface acoustic wave pressure sensors higher at measurement environment pressure, measure under the less demanding condition of sensitivity and use, the radio detection of pressing in vehicle tire pressure and the cylinder for example.And the object of have relatively high expectations in, detection resolution less relatively to some pressure measurement ranges (detecting as the blood pressure of animal or human's body) is when detecting, and the surface acoustic wave pressure sensor in the city just can not reach the requirement of measurement index basically so at present.We know, are a kind of highly effective method by increasing the elastic substrate area with the sensitivity that the thickness that reduces elastic substrate improves sensor.If but simultaneously sensor bulk and weight are manufactured with strict demand, as in special application fields such as implanted medical electric medicine equipment and Aero-Space, improve the sensitivity behaviour index and can sacrifice the encapsulation volume performance index of device and cause overall target defective by increasing Substrate Area so.The attenuate of substrate thickness has certain scope, but causes substrate frangible when substrate thickness is thinned to certain degree, from the manufacture craft and the bigger difficulty of device package technology existence of present piezoelectric substrate materials.Below we will briefly introduce the structure and the performance index thereof of several typical surface acoustic wave pressure sensors, and content of the present utility model is proposed with this.
Chinese patent CN101248339A discloses a kind of pressure transducer, it is that a rectangular substrate is covered on the manhole of pedestal, the substrate remainder is fixed on the pedestal and (is equivalent to the periphery fixed circular iris in the structural mechanics), exert pressure by the through hole on the pedestal, make substrate generation deformation, obtain the size of strain by the variation of measuring resonant frequency, thereby obtain the size of pressure.In this scheme, because substrate perimeter is completely fixed on the pedestal, the periphery of deformation region is also fixed.According to the Theoretical Calculation of the mechanics of materials and Elasticity as can be known, under same external force effect and physical dimension, the pressure elastic sensing element of this membrane structure, promptly the substrate pressure elastic sensing element of comparing common semi-girder and two-end fixed beam structure has relatively low strain.Caused the sensitivity of surface acoustic wave (SAW) pressure resonator of substrate top lower like this.
In addition, in Chinese patent CN101251599A, a kind of pressure transducer is disclosed.This sensor adopts the structure stationary substrate that is similar to semi-girder, pressure is acted on an end of substrate, and the other end of substrate is fixed on the pedestal of encapsulation.Like this, under identical physical dimension and pressure effect, the substrate that the above-mentioned Chinese patent CN101248339A periphery of the strain ratio of the substrate of cantilever beam structure is fixed is big, wants high so the sensitivity of sensor is also corresponding.But from one side, such structural design has increased complicacy on making, installation and the package design.For example, at first, the substrate that is adopted in the patent of above-mentioned cantilever beam structure need carve the structure of a semi-girder by etch process on original rectangular substrate, makes the making more complicated of substrate; Secondly, in installation by cantilever mounted beam one end with another force side with below the less fluid diaphragm also equal certain degree of difficulty that has of aliging; Moreover it is poor to compare the design and installation structure of mentioning among the above-mentioned Chinese patent CN101248339A on stability of structure.
The utility model content
Technical problem to be solved in the utility model provides little, the highly sensitive surface acoustic wave pressure sensor of a kind of volume.
Inventive concept of the present utility model is: with the substrate of the strip structure sensing unit as sensor, (being equivalent to the two-end fixed beam structure in the structural mechanics) fixed at the two ends of strip substrate, the center section of strip substrate is a pressure-sensitive area, this pressure-sensitive area is on the pressure conduction through hole fully, knowledge by structural mechanics can be known, under onesize pressure effect, the strain of the periphery fixed circular iris of the strain ratio equal in length of two-end fixed beam structure is big, so the strain of the substrate that the traditional periphery of the strain ratio of strip substrate is fixed increases the also corresponding raising of the sensitivity of pressure transducer.Simultaneously, compare, adopt the fixing strip structured substrate of both-end, make the making of substrate and installation simplify more, also make the structural stability of sensor improve with the substrate of single-ended fixing (being equivalent to the cantilever beam structure in the structural mechanics).
Fluid does not act directly on the substrate of the present utility model, comes convection cell to isolate by fluid diaphragm between fluid and the substrate, plays the effect of transmitting pressure simultaneously.Fluid is directed on the fluid diaphragm by pressure conduction through hole.When pressure conduction through hole was a circular hole, the diameter of pressure conduction can be identical with the pressure-sensitive area length partly in the middle of the strip substrate; Pressure conduction through hole also can be rectangular through-hole, as long as guarantee the frontal projected area on the xsect of pressure conduction through hole of the cross-sectional area of pressure conduction through hole greater than the pressure-sensitive area of strip substrate.As an available example, select circular pressure conduction through hole in the utility model for use.Fluid diaphragm is fixed on the pedestal, and overburden pressure conducts through hole fully, the strip substrate conducts through hole across pressure, pressure-sensitive area on the substrate and pressure conduction through hole over against, the two ends of strip substrate are installed on the fluid diaphragm, selected fluid diaphragm is that the relative substrate elastic modulus of an elastic modulus is lower, the film that coefficient of temperature conductivity is lower.The diameter of pressure conduction through hole and the pressure-sensitive area equal in length of strip substrate, and the sectional area of pressure conduction through hole is greater than the area of its top substrate pressure-sensitive area.Under the effect of certain hydrodynamic pressure, by the mechanical equilibrium condition of fluid diaphragm and substrate pressure-sensitive area as can be known, under the effect of relative flexibility fluid diaphragm, adopt the pressure conduction through hole of larger sectional area will make substrate obtain bigger external stress, thereby the hydrodynamic pressure of tested substrate pressure-sensitive area is had amplification.Can get by the ANSYS simulation calculation, when the pressure that adopts quartz material and effect is 8000Pa, the strip substrate strain of length 10mm, width 1mm, thickness 100um is about 15 times of circular membrane substrate strain of diameter length 10mm, thickness 100um, so the sensitivity of sensor is greatly improved.
The technical scheme in the invention for solving the technical problem is: this surface acoustic wave pressure sensor comprises top cover, be penetrated with the pedestal of first metal electrode and second metal electrode, described top seal is installed on the pedestal, wherein, described pedestal is provided with pressure conduction through hole, the inside surface sealing and fixing of described pedestal has fluid diaphragm, described fluid diaphragm overburden pressure conduction through hole, described pedestal, form closed chamber between top cover and the fluid diaphragm, be fixed with the strip substrate on the described fluid diaphragm, described substrate conducts through hole across pressure, be fixed with surface acoustic wave (SAW) pressure sensing resonator on the described substrate, surface acoustic wave benchmark resonator, first pad and second pad, described surface acoustic wave (SAW) pressure sensing resonator is over against the core of pressure conduction through hole, described surface acoustic wave (SAW) pressure sensing resonator and surface acoustic wave benchmark resonator two ends separately respectively with first pad, second pad connects, described first metal electrode places the end in the closed chamber to be connected with first pad, described second metal electrode places the end in the closed chamber to be connected with second pad, and the frontal projected area of the pressure-sensitive area on the described substrate is less than the area of the xsect of pressure conduction through hole.
Further, substrate described in the utility model is I-shaped structure, and described surface acoustic wave (SAW) pressure sensing resonator places the center section of I-shaped structure, and described surface acoustic wave benchmark resonator places the end of I-shaped structure.
Further, substrate described in the utility model is provided with match circuit, and described first pad is connected with match circuit respectively with second pad.
Further, the utility model can replace being penetrated with the pedestal of first metal electrode and second metal electrode with the pedestal that is fixed with tours antenna, and the two ends of described tours antenna are connected with second pad with first pad respectively.
Compared with prior art, the beneficial effects of the utility model are: by adopting the substrate of strip structure, and adopt the pressure bigger to conduct through hole with respect to substrate pressure-sensitive area size, make the sensitivity of surface acoustic wave pressure sensor be enhanced, and the structure of strip makes that the making of substrate is fairly simple, and the fixing structure of both-end also makes the stability of sensor improve.Because the sensitivity of having adopted the method for non-increase Substrate Area to improve sensor is so the volume of the utility model sensor can reduce greatly.The pressure transducer of this high sensitivity, small size and structural design thereof have broad application prospects in the implanted medical electric medicine equipment in Aero-Space.
Description of drawings
Fig. 1 is the structure cut-open view of the utility model surface acoustic wave pressure sensor;
Fig. 2 is the A-A cut-open view of Fig. 1;
Structural representation when Fig. 3 is the utility model surface acoustic wave pressure sensor employing I shape substrate;
Fig. 4 is the structural representation when adding match circuit on the utility model surface acoustic wave pressure sensor substrate;
Fig. 5 is the structural representation when adding tours antenna on the utility model surface acoustic wave pressure sensor pedestal.
Embodiment
As shown in Figure 1, the utility model surface acoustic wave fluid pressure sensor, it comprises pedestal 1 and top cover 2, pedestal 1 adopts the lower material of coefficient of temperature conductivity, as plastics etc., can reduce the influence of temperature to sensor.Top cover 2 sealings are installed on the pedestal 1, and the material that top cover 2 is selected for use should be able to guarantee passing through smoothly of radio magnetic wave signal, in order to avoid cause shielding for example can be plastics, pottery to wireless signal.
Be fixed with fluid diaphragm 10 on the inside surface of pedestal 1, the pressure conduction through hole 4 on the pedestal 1 can be used for the pressure of fluid is directed on the fluid diaphragm 10.This fluid diaphragm 10 is films that one deck elastic modulus is little and coefficient of temperature conductivity is lower, pressure can be passed to substrate 3 and simultaneously with temperature isolation, makes 3 pairs of presser sensors of substrate, and the sensitivity of temperature is reduced.Fluid diaphragm 10 complete overburden pressure conduction through holes 4, to form hermetically-sealed construction to the fluid of pressure conduction through hole 4 peripheries, fluid diaphragm 10 forms the closed chamber 12 of a sealing with pedestal 1, top cover 2, the reference pressure chamber of this closed chamber 12 during as pressure detection.
Be penetrated with first metal electrode 71 and second metal electrode, 72, the first metal electrodes 71 on the pedestal 1 and second metal electrode, 72 usefulness fluid sealants are fixed on the pedestal 1.One end of first metal electrode 71 and second metal electrode 72 places in the closed chamber 12; The other end of first metal electrode 71 and second metal electrode 72 places the outside of the utility model sensor, can be used to connect external antenna or circuit etc.First metal electrode 71 places the end in the closed chamber 12 to be connected with first pad 81, and second metal electrode 72 places the end in the closed chamber 12 to be connected with second pad 82.
As shown in Figure 2, be fixed with strip substrate 3 on the fluid diaphragm 10, substrate 3 conducts through hole 4 across pressure and is fixed on the fluid diaphragm 10, to guarantee that under the effect of hydrodynamic pressure pressure-sensitive area 31 zone in addition over against pressure conduction through hole 4 on the substrate 3 is all fixed.This structure is equivalent to the two-end fixed beam structure in the structural mechanics.By the knowledge of structural mechanics as can be known, under same pressure effect, the strain of the circular film that the strain ratio of substrate and the periphery that its size and thickness all equate are fixing is big, and this pressure sensitivity to sensor improves.The upper surface of substrate 3 is equipped with surface acoustic wave (SAW) pressure sensing resonator 5 and surface acoustic wave benchmark resonator 6, wherein surface acoustic wave (SAW) pressure sensing resonator 5 is over against the core of pressure conduction through hole 4, so that this surface acoustic wave (SAW) pressure sensing resonator 5 is in the zone of substrate 3 strain maximums, the sensitivity that can improve sensor thus under the effect of hydrodynamic pressure.Substrate 3 is a pressure-sensitive area 31 over against the part of pressure conduction through hole 4, and the cross-sectional area of pressure conduction through hole 4 is greater than the frontal projected area on the xsect of this pressure conduction through hole 4 of the pressure-sensitive area 31 of the substrate 3 that is positioned at its top.By the mechanical equilibrium condition of fluid diaphragm 10 and substrate 3 pressure-sensitive area 31 as can be known, under the effect of certain hydrodynamic pressure, under the effect of relative flexibility fluid diaphragm 10, adopt the pressure conduction through hole 4 of larger sectional area will make substrate 3 obtain bigger external stress, thereby the hydrodynamic pressure to the pressure-sensitive area 31 of tested substrate 3 has amplification, so the utility model sensor has higher pressure sensitivity.
As shown in Figure 3, strip substrate 3 in the utility model can be I-shaped structure, this I shape substrate is across pressure conduction through hole 4, wherein, the two ends 3a of this I shape substrate is separately fixed on the fluid diaphragm 10 of pedestal 1 top, center section 3b is a pressure-sensitive area, and this pressure-sensitive area is over against pressure conduction through hole 4; Surface acoustic wave (SAW) pressure sensing resonator 5 is positioned at the center of the pressure-sensitive area upper surface of this I shape substrate, and surface acoustic wave benchmark resonator 6 is positioned at the upper surface of I shape substrate one end 3a.This I shape substrat structure also is equivalent to the two-end fixed beam structure in the structural mechanics, and the two ends of beam are because fixing, is insensitive to the variation of pressure, and center section is owing to be subjected to the effect of fluid diaphragm 10, to presser sensor.By the knowledge of structural mechanics as can be known, under same pressure effect, the strain of this I shape substrate 3 is greater than the strain of the fixing substrate of periphery, and pressure sensitivity is also corresponding have been improved.
As shown in Figure 4, on the substrate 3 of sensor, can also be manufactured with match circuit 11, this match circuit 11 can directly be produced on the substrate 3 by photoetching technique, also can be manufactured with several circuit connection pads on substrate 3 by photoetching technique, then match circuit 11 is welded on the pad.
As another kind of embodiment of the present utility model, as shown in Figure 5, the pedestal 1 of sensor no longer is provided with first metal electrode 71 and second metal electrode 72, but is fixed with tours antenna 13 on pedestal 1.This tours antenna 13 can directly be printed on the pedestal 1 by ink-jet technology, the two ends of tours antenna 13 are connected on first pad 81 and second pad 82 on the substrate 3 by lead 9, first pad 81 on the substrate 3 and second pad 82 can directly form on substrate 3 by photoetching technique, and surface acoustic wave (SAW) pressure sensing resonator 5 is connected with first pad 81, second pad 82 respectively with surface acoustic wave benchmark resonator 6 two ends separately.The shape of tours antenna 13 can be to encompass rectangle, circle or other shapes; Can be in two ends or the same side of substrate 3, even can tours antenna 13 be connected with second pad 82 with first pad 81 at any old place of substrate 3, this is by length decision of tours antenna 13.
The utility model surface acoustic wave hydrodynamic pressure and temperature sensor are mainly used in the detection of the pressure and temperature of fluid (liquid or gas), also can be used for detection to mechanical pressure, when being used for mechanical pressure detected, pressure can be acted on the fluid diaphragm 10 over against the part of substrate 3 upward pressure sensitizing ranges 31, the remolding sensitivity of sensor uses the sensor of peripheral stationary substrate also to improve.
More than be concrete fabrication and installation mode of the present utility model, those skilled in the art can produce the utility model surface acoustic wave pressure sensor by using some alternative of mentioning in the utility model disclosed method and the utility model.The sensitivity that the utility model has improved sensor owing to the method that has adopted non-increase Substrate Area, the volume of sensor can reduce greatly.The pressure transducer of this high sensitivity, small size and structural design thereof have broad application prospects in the implanted medical electric medicine equipment in Aero-Space.
Claims (4)
1. surface acoustic wave pressure sensor, it comprises top cover (2), be penetrated with the pedestal (1) of first metal electrode (71) and second metal electrode (72), described top cover (2) sealing is installed on the pedestal (1), it is characterized in that: described pedestal (1) is provided with pressure conduction through hole (4), the inside surface sealing and fixing of described pedestal (1) has fluid diaphragm (10), described fluid diaphragm (10) overburden pressure conduction through hole (4), described pedestal (1), form closed chamber (12) between top cover (2) and the fluid diaphragm (10), be fixed with strip substrate (3) on the described fluid diaphragm (10), described substrate (3) is across pressure conduction through hole (4), be fixed with surface acoustic wave (SAW) pressure sensing resonator (5) on the described substrate (3), surface acoustic wave benchmark resonator (6), first pad (81) and second pad (82), described surface acoustic wave (SAW) pressure sensing resonator (5) is over against the core of pressure conduction through hole (4), described surface acoustic wave (SAW) pressure sensing resonator (5) and surface acoustic wave benchmark resonator (6) two ends separately respectively with first pad (81), second pad (82) connects, described first metal electrode (71) places the end in the closed chamber (12) to be connected with first pad (81), described second metal electrode (72) places the end in the closed chamber (12) to be connected with second pad (82), and the frontal projected area of the pressure-sensitive area (31) on the described substrate (3) is conducted the area of the xsect of through hole (4) less than pressure.
2. a kind of surface acoustic wave pressure sensor according to claim 1, it is characterized in that: described substrate (3) is I-shaped structure, described surface acoustic wave (SAW) pressure sensing resonator (5) places the center section (3b) of I-shaped structure, and described surface acoustic wave benchmark resonator (6) places the end (3a) of I-shaped structure.
3. surface acoustic wave fluid pressure sensor according to claim 1 and 2 is characterized in that: described substrate (3) is provided with match circuit (11), and described first pad (81) is connected with match circuit (11) respectively with second pad (82).
4. a kind of surface acoustic wave pressure sensor according to claim 3, it is characterized in that: use the pedestal that is fixed with tours antenna (13) to replace being penetrated with the pedestal (1) of first metal electrode (71) and second metal electrode (72), the two ends of described tours antenna (13) are connected with second pad (82) with first pad (81) respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201907699U CN201497610U (en) | 2009-08-06 | 2009-08-06 | Surface acoustic wave pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201907699U CN201497610U (en) | 2009-08-06 | 2009-08-06 | Surface acoustic wave pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201497610U true CN201497610U (en) | 2010-06-02 |
Family
ID=42440814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201907699U Expired - Fee Related CN201497610U (en) | 2009-08-06 | 2009-08-06 | Surface acoustic wave pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201497610U (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2710959A1 (en) * | 2012-09-20 | 2014-03-26 | Masimo Corporation | Acoustic patient sensor coupler |
| US8771204B2 (en) | 2008-12-30 | 2014-07-08 | Masimo Corporation | Acoustic sensor assembly |
| US9192351B1 (en) | 2011-07-22 | 2015-11-24 | Masimo Corporation | Acoustic respiratory monitoring sensor with probe-off detection |
| US9370335B2 (en) | 2009-10-15 | 2016-06-21 | Masimo Corporation | Physiological acoustic monitoring system |
| US9386961B2 (en) | 2009-10-15 | 2016-07-12 | Masimo Corporation | Physiological acoustic monitoring system |
| US9538980B2 (en) | 2009-10-15 | 2017-01-10 | Masimo Corporation | Acoustic respiratory monitoring sensor having multiple sensing elements |
| US9782110B2 (en) | 2010-06-02 | 2017-10-10 | Masimo Corporation | Opticoustic sensor |
| US10357209B2 (en) | 2009-10-15 | 2019-07-23 | Masimo Corporation | Bidirectional physiological information display |
| US10463340B2 (en) | 2009-10-15 | 2019-11-05 | Masimo Corporation | Acoustic respiratory monitoring systems and methods |
| CN112945430A (en) * | 2021-03-25 | 2021-06-11 | 西安交通大学 | Surface acoustic wave high-temperature pressure sensor |
-
2009
- 2009-08-06 CN CN2009201907699U patent/CN201497610U/en not_active Expired - Fee Related
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9795358B2 (en) | 2008-12-30 | 2017-10-24 | Masimo Corporation | Acoustic sensor assembly |
| US8771204B2 (en) | 2008-12-30 | 2014-07-08 | Masimo Corporation | Acoustic sensor assembly |
| US9028429B2 (en) | 2008-12-30 | 2015-05-12 | Masimo Corporation | Acoustic sensor assembly |
| US9131917B2 (en) | 2008-12-30 | 2015-09-15 | Masimo Corporation | Acoustic sensor assembly |
| US11559275B2 (en) | 2008-12-30 | 2023-01-24 | Masimo Corporation | Acoustic sensor assembly |
| US10548561B2 (en) | 2008-12-30 | 2020-02-04 | Masimo Corporation | Acoustic sensor assembly |
| US9867578B2 (en) | 2009-10-15 | 2018-01-16 | Masimo Corporation | Physiological acoustic monitoring system |
| US9370335B2 (en) | 2009-10-15 | 2016-06-21 | Masimo Corporation | Physiological acoustic monitoring system |
| US10925544B2 (en) | 2009-10-15 | 2021-02-23 | Masimo Corporation | Acoustic respiratory monitoring sensor having multiple sensing elements |
| US9386961B2 (en) | 2009-10-15 | 2016-07-12 | Masimo Corporation | Physiological acoustic monitoring system |
| US9538980B2 (en) | 2009-10-15 | 2017-01-10 | Masimo Corporation | Acoustic respiratory monitoring sensor having multiple sensing elements |
| US10463340B2 (en) | 2009-10-15 | 2019-11-05 | Masimo Corporation | Acoustic respiratory monitoring systems and methods |
| US10098610B2 (en) | 2009-10-15 | 2018-10-16 | Masimo Corporation | Physiological acoustic monitoring system |
| US10349895B2 (en) | 2009-10-15 | 2019-07-16 | Masimo Corporation | Acoustic respiratory monitoring sensor having multiple sensing elements |
| US10357209B2 (en) | 2009-10-15 | 2019-07-23 | Masimo Corporation | Bidirectional physiological information display |
| US9782110B2 (en) | 2010-06-02 | 2017-10-10 | Masimo Corporation | Opticoustic sensor |
| US9192351B1 (en) | 2011-07-22 | 2015-11-24 | Masimo Corporation | Acoustic respiratory monitoring sensor with probe-off detection |
| US9955937B2 (en) | 2012-09-20 | 2018-05-01 | Masimo Corporation | Acoustic patient sensor coupler |
| EP2710959A1 (en) * | 2012-09-20 | 2014-03-26 | Masimo Corporation | Acoustic patient sensor coupler |
| EP3777694A1 (en) * | 2012-09-20 | 2021-02-17 | Masimo Corporation | Acoustic patient sensor coupler |
| US11020084B2 (en) | 2012-09-20 | 2021-06-01 | Masimo Corporation | Acoustic patient sensor coupler |
| CN112945430A (en) * | 2021-03-25 | 2021-06-11 | 西安交通大学 | Surface acoustic wave high-temperature pressure sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101620018B (en) | Surface acoustic wave pressure sensor | |
| CN201497610U (en) | Surface acoustic wave pressure sensor | |
| CN101625274B (en) | Acoustic surface wave pressure sensor and acoustic surface wave temperature sensor | |
| EP0832424B1 (en) | Vapor pressure sensor and method | |
| CN201653605U (en) | Silicon-bonding based pressure sensor | |
| CN103105248B (en) | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor | |
| CN104515640B (en) | Capacitive MEMS (micro-electromechanical system) pressure sensor | |
| US8089828B2 (en) | Acoustic sensor element | |
| CN205785644U (en) | MEMS minute-pressure pressure transducer | |
| JP6128278B2 (en) | Improved pressure sensor | |
| WO2020191576A1 (en) | Sensor | |
| CN110926590B (en) | Piezoelectric type MEMS hydrophone | |
| CN102928131A (en) | Quartz resonance beam type micro-pressure sensor chip | |
| CN105606201B (en) | Combined type MEMS bionic hydrophones | |
| CN114323408A (en) | Multi-range multi-sensitivity pressure MEMS chip | |
| CN202304895U (en) | Sputtered film chip for realizing simultaneous test of temperature and pressure signals | |
| US7246526B2 (en) | Pressure sensor, method of fabricating the same, and method of calibrating the same | |
| CN201497600U (en) | Surface acoustic wave pressure and temperature sensor | |
| CN1828246A (en) | Piezoresistance type free field pressure sensor | |
| CN112964417B (en) | Capacitive pressure sensitive chip with double movable polar plates | |
| CN107976274A (en) | A kind of pressure-detecting device and detection method based on synchro-resonance | |
| US4682502A (en) | Pressure sensor | |
| CN110243532A (en) | A kind of fiber bragg grating pressure sensor of pipe oil gas pressure monitoring | |
| CN111623917B (en) | High-sensitivity surface acoustic wave absolute pressure sensor | |
| JP2009265012A (en) | Semiconductor sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100602 Termination date: 20100806 |