CN1998086A - Semiconductor device, TV set, and manufacturing methods thereof - Google Patents

Semiconductor device, TV set, and manufacturing methods thereof Download PDF

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Publication number
CN1998086A
CN1998086A CN 200580003172 CN200580003172A CN1998086A CN 1998086 A CN1998086 A CN 1998086A CN 200580003172 CN200580003172 CN 200580003172 CN 200580003172 A CN200580003172 A CN 200580003172A CN 1998086 A CN1998086 A CN 1998086A
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China
Prior art keywords
film
light
semiconductor
mask pattern
sensitive material
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CN 200580003172
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Chinese (zh)
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CN100499170C (en
Inventor
山崎舜平
小路博信
荒井康行
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]

Abstract

An object of the invention is to provide a method for manufacturing a substrate having a film pattern such as an insulating film, a semiconductor film, or a conductive film with an easy process, and further, a semiconductor device and a television set having a high throughput or a high yield at low cost and a manufacturing method thereof. One feature of the invention is that a first film pattern is formed by a droplet discharge method, a photosensitive material is discharged or applied to the first film pattern, a mask pattern is formed by irradiating a region where the first film pattern and the photosensitive material are overlapped with a laser beam and by developing, and a second film pattern having a desired shape is formed by etching the first film pattern using the mask pattern as a mask.

Description

Semiconductor device, television set and manufacture method thereof
Technical field
The present invention relates to a kind of semiconductor device and television set that has by with the ink ejecting method being the semiconductor element that forms of the droplet drainage method of representative, and relate to the manufacture method of this semiconductor device and television set.
Background technology
In making semiconductor device, be conceived to reduce the cost of device and simplify technology, consider to use the droplet drainage method to be formed for the film of semiconductor element or the pattern of wiring.
In this case, when in semiconductor element, forming film figure, by carry out with resist be coated on the whole surface of substrate, prebake, mask pattern by therebetween shines with ultraviolet ray etc. and develops to form the lithography step of resist pattern then, with by use the resist pattern as mask pattern by etching with remove and be present in becoming film in the part of film figure (film that forms by semi-conducting material, insulating material or electric conducting material), form film figure.
In addition, disclosing a kind of being used in list of references 1 (list of references 1: the Japan Patent spy opens No.2000-188251) can form film from nozzle continue the to release device of resist at semiconductor wafer with linear shape with fine diameter by using, to improve the technology that film forms required liquid yield.
Summary of the invention
Yet the droplet solution with minor diameter need be released, to form the semiconductor element with little occupied area by the droplet drainage method according to disclosed technology in the list of references 1.When for this reason the diameter of bleeding opening is made hour, the composition of the solution of releasing pastes bleeding opening, and is dry and solidify, and causes and block opening etc.Thus, be difficult to continue a certain amount of solution of releasing of also stably releasing.Therefore, existence causes the output of the semiconductor device that is formed with described semiconductor element or the problem that rate of finished products reduces.
Consider that this problem made the present invention, and the purpose of this invention is to provide a kind of method that is used to make semiconductor element with micro-structure, further, provide a kind of semiconductor device that has high-throughput or high finished product rate cheaply and television set with and manufacture method.
One of the present invention is characterised in that by the droplet drainage method and forms first film figure, light-sensitive material is released or be applied to first film figure, form mask pattern by the zone of overlapping mutually and by developing, and to use mask pattern to form the second mould pattern by etching first film figure with desirable shape as mask with laser beam irradiation first film figure and light-sensitive material.
Another feature of the present invention is to form first film figure by the droplet drainage method, light-sensitive material is released or be coated on first film figure, form mask pattern by the zone of overlapping mutually and by developing with laser beam irradiation first film figure and light-sensitive material, use this mask pattern as mask by etching first film figure form second film figure with desirable shape and by the droplet drainage method form be connected to second film figure the tertiary membrane pattern.
Light-sensitive material is negative light-sensitive resin or positive light-sensitive resin.
First film figure is a conducting film, and second film figure is gate electrode, source electrode or drain electrode, and thereby, the tertiary membrane pattern is wiring.
First film figure is a semiconductor film, and second film figure has channel formation region, source region and drain region.
First film figure is a dielectric film, and second film figure is the dielectric film with opening.
Another feature of the present invention is, form first film figure by the electric conducting material of releasing with the droplet drainage method, first light-sensitive material is released or be coated on first film figure, form first mask pattern by the zone of overlapping mutually and by developing with laser beam irradiation first film figure and first light-sensitive material, use first mask pattern to form gate electrode by etching first film figure with desirable shape as mask, dielectric film and semiconductor film are formed at the gate electrode top, on the coating of second light-sensitive material or the semiconductor film of releasing, by forming second mask pattern with laser beam irradiation second light-sensitive material and by developing, use second mask pattern to form semiconductor regions by the etching semiconductor film with desirable shape as mask and form will with semiconductor regions contacted source electrode and drain electrode.
Another feature of the present invention is to form first film figure by the electric conducting material of releasing with the droplet drainage method; first light-sensitive material is released or be applied to first film figure; form first mask pattern by the zone of overlapping mutually and by developing with laser beam irradiation first film figure and first light-sensitive material; use first mask pattern to form gate electrode by etching first film figure with desirable shape as mask; with the formation dielectric film and first semiconductor film above gate electrode; above first semiconductor film, form diaphragm; above first semiconductor film and diaphragm, form second semiconductor film; on the coating of second light-sensitive material or second semiconductor film of releasing; by forming second mask pattern with laser beam irradiation second light-sensitive material and by developing; use second mask pattern to form semiconductor regions by etching first semiconductor film and second semiconductor film with desirable shape as mask and form will with semiconductor regions contacted source electrode and drain electrode.
Another feature of the present invention is, form first film figure by the electric conducting material of releasing with the droplet drainage method, first light-sensitive material is released or be applied on first film figure, form first mask pattern by the zone of overlapping mutually and by developing with laser beam irradiation first film figure and first light-sensitive material, use first mask pattern to form source electrode and drain electrode by etching first film figure with desirable shape as mask, above source electrode and drain electrode, form semiconductor film, on the coating of second light-sensitive material or the semiconductor film of releasing, by forming second mask pattern with laser beam irradiation second light-sensitive material and by developing, use second mask pattern to form semiconductor regions by the etching semiconductor film, above semiconductor regions, form dielectric film and gate electrode with desirable shape as mask.
The present invention is a kind of method that is used to make television set, be characterised in that: form first film figure by the electric conducting material of releasing with the droplet drainage method, first light-sensitive material is released or be coated on first film figure, form first mask pattern by the zone of overlapping mutually and by developing with laser beam irradiation first film figure and first photo anti-corrosion agent material, use first mask pattern to form gate electrode by etching first film figure with desirable shape as mask, above gate electrode, form dielectric film and semiconductor film, on the coating of second light-sensitive material or the semiconductor film of releasing, by forming second mask pattern with laser beam irradiation second light-sensitive material and by developing, use second mask pattern to form semiconductor regions by the etching semiconductor film with desirable shape as mask, formation will and form the pixel electrode that will be connected to drain electrode with semiconductor regions contacted source electrode and drain electrode.
The present invention is a kind of method that is used to make television set; be characterised in that; form first film figure by the electric conducting material of releasing with the droplet drainage method; first light-sensitive material is released or be coated on first film figure; form first mask pattern by the zone of overlapping mutually and by developing with laser beam irradiation first film figure and first light-sensitive material; use first mask pattern to form gate electrode by etching first film figure with desirable shape as mask; above gate electrode, form the dielectric film and first semiconductor film; above first semiconductor film, form diaphragm; above first semiconductor film and diaphragm, form second semiconductor film; on the coating of second light-sensitive material or second semiconductor film of releasing; by forming second mask pattern with laser beam irradiation second light-sensitive material and by developing; use second mask pattern to form semiconductor regions by etching first semiconductor film and second semiconductor film with desirable shape as mask; formation will with semiconductor regions contacted source electrode and drain electrode, and form the pixel electrode that will be connected with drain electrode.
The present invention is a kind of method that is used to make television set, be characterised in that, form first film figure by the electric conducting material of releasing with the droplet drainage method, first light-sensitive material is released or be coated on first film figure, form first mask pattern by the zone of overlapping mutually and by developing with laser beam irradiation first film figure and first light-sensitive material, use first mask pattern to form source electrode and drain electrode by etching first film figure with desirable shape as mask, above source electrode and electric leakage level, form semiconductor film, with the coating of second light-sensitive material or the semiconductor film of releasing, by forming second mask pattern with laser beam irradiation second light-sensitive material and by developing, use second mask pattern to form semiconductor regions by the etching semiconductor film with desirable shape as mask, above semiconductor regions, form dielectric film and gate electrode, and form will with the contacted pixel electrode of drain electrode.
First light-sensitive material and second light-sensitive material are the negative light-sensitive resins.
First light-sensitive material and second light-sensitive material are the positive light-sensitive resins.
A kind of in first light-sensitive material and second light-sensitive material is the negative light-sensitive resin, and its another kind is the positive light-sensitive resin.
In the present invention, laser beam has from ultraviolet ray to ultrared arbitrary wavelength.
In addition, the present invention is the semiconductor device that has the wiring that forms by the droplet drainage method and be connected to the electrode of wiring, is characterised in that electrode has 5 μ m or littler width.
The present invention has thin-film transistor that is provided with gate electrode, gate insulating film, semiconductor regions, source electrode and drain electrode and the semiconductor device that is connected to the grating routing of gate electrode, be characterised in that, gate electrode has 5 μ m or littler width, and forms the canopy wiring by the droplet drainage method.
The present invention is the television set that is provided with the display device with the wiring that is formed by the droplet drainage method and is connected to the electrode of wiring, and wherein electrode has 5 μ m or littler width.
The present invention is the television set that is provided with the display device of the grating routing that has thin-film transistor and be connected to gate electrode, this thin-film transistor has gate electrode, gate insulating film, semiconductor regions, source electrode and drain electrode, wherein gate electrode has 5 μ m or littler width, and forms grating routing by the droplet drainage method.
As the representative instance of television set, liquid crystal TV set or EL television set have been provided.
Provided the semiconductor element that is included in pixel, TFT, field-effect transistor (FET), MOS transistor, bipolar transistor, organic semiconductor transistor, MIM element, memory element, diode, photo-electric conversion element, capacity cell, the resistive element etc.
In the present invention, be that to be to use display element be the device of image display device for the display device meaning of the representative instance of semiconductor device.And display device comprises: the module with the display panel that is pasted with connector such as FPC (flexible print circuit), TAB (carrier band combination automatically) band or TCP (band carries encapsulation); Have the TAB band that provides printed substrate in its end or the module of TCP; And have the module that the display element of IC (integrated circuit) or CPU directly is installed by COG (chip on glass) method.
As in the present invention, availablely carry out etching by the mask pattern that directly forms and form small mask pattern, and do not use photomask with laser beam irradiation.Thus, can carry out little manufacturing, and can form semiconductor element with micro-structure by the film figure of droplet drainage method formation.
When the droplet drainage method being used in when forming in the film figure, relative position that can be by changing nozzle is with droplet any position of releasing, and wherein nozzle is the bleeding opening that comprises the droplet of its membrane material and substrate.In addition, can and will provide the width that relativeness between the translational speed of substrate of the droplet of releasing is adjusted the pattern that will form according to nozzle diameter, the droplet amount of releasing and nozzle translational speed.Therefore, can in the part of hope, form film figure with pinpoint accuracy by above large-scale semiconductor component substrate, releasing fully with 1m to 2m or bigger limit.Owing to can omit the exposure and the developing process that use photomask, therefore can realize simplifying technology and reduce cost.
And, can have the semiconductor element of micro-structure by use, make semiconductor device with low-cost high yield, as have the high density integrated circuit having or the display device of high aperture ratio, or television set.
Description of drawings
Figure 1A to 1E is the perspective view that the step of film figure formed according to the present invention is shown.
Fig. 2 is the surperficial vertical view that the step of film figure formed according to the present invention is shown.
Fig. 3 A to 3F is the sectional view that the semiconductor device according to the invention manufacturing step is shown.
Fig. 4 A to 4E is the sectional view that illustrates according to the semiconductor device manufacturing step of invention.
Fig. 5 A to 5G is the sectional view that the semiconductor device according to the invention manufacturing step is shown.
Fig. 6 A to 6E is the sectional view that the semiconductor device according to the invention manufacturing step is shown.
Fig. 7 A to 7E is the sectional view that the semiconductor device according to the invention manufacturing step is shown.
Fig. 8 illustrates the direct projection arrangement schematic diagram of laser according to the present invention.
Fig. 9 A to 9C is the top view that illustrates according to the installation method of display device drive circuit of the present invention.
Figure 10 A to 10D is the sectional view that illustrates according to the installation method of display device drive circuit of the present invention.
Figure 11 is the block diagram that the structure of electronic device is shown.
Figure 12 shows the example of electronic device.
Figure 13 A and 13B show the example of electronic device.
Figure 14 shows according to the present invention, forms the circuit structure under the situation of the scan line side drive circuit with TFT in LCD panel.
Figure 15 shows according to the present invention, forms the circuit structure (shift register circuit) under the situation of the scan line side drive circuit with TFT in LCD panel.
Figure 16 shows according to the present invention, forms the circuit structure (buffer circuit) under the situation of the scan line side drive circuit with TFT in LCD panel.
Figure 17 A to 17G shows the sectional view of semiconductor device according to the invention manufacturing step.
Figure 18 A to 18D shows the sectional view of semiconductor device according to the invention manufacturing step.
Figure 19 shows the top view of semiconductor device according to the invention manufacturing step.
Figure 20 shows the top view of semiconductor device according to the invention manufacturing step.
Figure 21 shows the top view of semiconductor device according to the invention manufacturing step.
Figure 22 A and 22B show and can be applied to liquid crystal drop method of the present invention.
Figure 23 shows the structure according to LCD MODULE of the present invention.
Figure 24 shows the structure that can be applied to droplet bleeder of the present invention.
Figure 25 A and 25B show the surperficial vertical view of the mask pattern according to the present invention.
Figure 26 A to 26D shows the pattern that can be applied to light-emitting component of the present invention.
Figure 27 A to 27F shows the equivalent circuit diagram of the dot structure that can be applied to luminescence display panel of the present invention.
Figure 28 A to 28C shows according to the top view of luminescence display panel structure of the present invention and sectional view.
Figure 29 A to 29E shows the sectional view of semiconductor device according to the invention manufacturing step.
Figure 30 A to 30D shows the sectional view of semiconductor device according to the invention manufacturing step.
Figure 31 A and 31B show the sectional view of semiconductor device according to the invention manufacturing step.
Figure 32 shows the top view of semiconductor device according to the invention manufacturing step.
Figure 33 shows the top view of semiconductor device according to the invention manufacturing step.
Figure 34 shows the top view of semiconductor device according to the invention manufacturing step.
Figure 35 A to 35C shows the structure according to luminous display module of the present invention.
Embodiment
Below, be described with reference to the drawings and implement optimal mode of the present invention.The invention is not restricted to following description.Understand easily as those skilled in the art institute, pattern of the present invention and details can be carried out various changes and do not broken away from purpose of the present invention and scope.The present invention is not explained and is limited to the following description of Implementation Modes.In addition, provide identical reference number, and omitted its detailed description for the common ground among every width of cloth figure.
(Implementation Modes 1)
In the present embodiment, referring to figs. 1A to 1E and Fig. 2, described and used the step that forms narrow wiring by the mask pattern that forms with laser beam (below, be also referred to as laser) irradiation.
Fig. 2 is wherein with the plane graph of the substrate 101 of cells arranged in matrix pixel 110.Above substrate 101, illustrate as after a while with the 3rd conductive layer 107 of the grating routing of the semiconductor element that forms with solid line.In addition, shown in broken lines after a while with the source wiring of the semiconductor element that forms, semiconductor regions, source electrode, drain electrode, pixel electrode etc.
Figure 1A to 1E is the front perspective view of the substrate among the Fig. 2 that obtains along line A-B.Referring to figs. 1A to 1E manufacturing process of the present invention is described.
Above substrate 101, form first conductive layer 102 by the droplet drainage method shown in Figure 1A.
As substrate 101, can use glass substrate, quartz substrate, by as the insulating material of pottery etc. for example substrate made of aluminium oxide, the heat resistant plastic substrate, silicon wafer, metallic plate etc. of treatment temperature that can tolerate reprocessing.In addition, the large tracts of land substrate of 320mm * 400mm, 370mm * 470mm, 550mm * 650mm, 600mm * 720mm, 680mm * 880mm, 1000mm * 1200mm, 1100mm * 1250mm, 1150mm * 1300mm etc. can be used as substrate 101.
Dissolving or be dispersed in conductor in the solvent as the composition that will release from bleeding opening, as the material of first conductive layer.The particle of metal such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Si, Ge, Zr or Ba, its dispersant nano particle or silver halide molecule can be used as conductor.Alternatively, can use ITO (tin indium oxide), contain silica as the ITO of its component, organo indium, organotin, zinc oxide (ZnO), usually as the titanium nitride (TiN) of nesa coating etc.In addition, first conductive layer can form by the stacked conductive layer of being made by this material.
About the composition that will be released from bleeding opening, consider specific resistance value, preferred use dissolving or be dispersed in gold, silver in the solvent and any material in the copper.More preferably use low-resistivity and cheap silver or copper.When using silver or copper, can provide barrier film in addition as impurity measurement.About solvent, can use ester such as butyl acetate and ethyl acetate, pure organic solvent as isopropyl alcohol and ethanol, butanone or acetone etc.
At this, under the situation of using copper as wiring, preferably will contain the insulation of nitrogen or electric conducting material such as silicon nitride, silicon oxynitride, aluminium nitride, titanium nitride or tantalum nitride (TaN) as barrier film, and this material forms by the droplet drainage method.
The viscosity of composition that is used for the droplet drainage method is preferably from 5mPas to 20mPas.This be since can prevent that composition is dried maybe can be from the bleeding opening composition of releasing glibly.The surface tension of composition is 40mN/m or littler preferably.Note, can suitably adjust the viscosity etc. of composition according to the solvent that will use and be intended to use.For example, wherein in solvent the dissolving or disperseed ITO, containing silica can be from 5mPas to 20mPas as the viscosity of the composition of ITO, organo indium or the organotin of component, wherein dissolving or disperseed the viscosity of silver-colored composition can be in solvent, and wherein dissolving or disperseed the viscosity of golden composition can be in solvent from 10mPas to 20mPas from 5mPas to 20mPas.
Although it depends on the diameter of each nozzle, the desirable shape of pattern etc., in order to prevent stopped nozzles and make the purpose of pinpoint accuracy pattern that the particle diameter preferred fabrication of conductor gets as far as possible little.Preferably, the particle diameter of electric conducting material is 0.1 μ m or littler.Reduce method (wet reducing method) etc. by known method such as electrolytic method, atomization method, wet type and form composition, and its particle size is usually approximately from 0.5 μ m to 10 μ m.Yet when using the gas evaporation method, the nano molecular of being protected by dispersant is small, is about 7nm.When each surface coverage of nano particle had coating, nano particle was also non-caked in solvent, and at room temperature is evenly dispersed in the solvent, and demonstrates and characteristic like the liquid phase.Therefore, preferably use coating.
Can under the pressure that reduces, the release step of composition.This is because at the solvent that evaporate composition from the composition of releasing during composition drops on the cycle on the processed object, and thus, the drying that can omit or shorten step after a while with cure composition.After the solution of releasing,,, carry out one or two step in dry and the baking step under normal pressure or under the decompression by laser radiation, rapid thermal annealing, heating furnace etc. according to the kind of solution.Dry and cure in each step all be heat treatment step.For example, under 100 ℃, carried out drying three minutes, and from curing under 200 ℃ to 350 ℃ the temperature 15 minutes to 120 minutes, its each all have different purposes, temperature and cycle.Heated substrate is to carry out drying and baking step better.The temperature of heated substrate depended on the material of substrate etc. at that time, but it is arranged to from 100 ℃ to 800 ℃ (preferably from 200 ℃ to 350 ℃).According to above-mentioned steps, quicken to melt and welding by the resin around evaporating solvent in solution or chemistry removal dispersant and sclerosis and the reduction.In oxygen atmosphere, nitrogen atmosphere or air atmosphere, carry out above-mentioned steps.Preferably in oxygen atmosphere, carry out above-mentioned steps, in oxygen atmosphere, remove the solvent of wherein dissolving or dispersed metal element easily.
Continuous wave or impulse wave gas laser or solid state laser can be used for laser radiation.Can provide excimer laser, YAG laser etc. as gas laser with can provide and use YAG, the YVO be doped with Cr, Nd etc. 4Deng the laser of crystal as solid state laser.Note the preferred use continuous wave laser relevant with the absorption coefficient of laser.And, can use the so-called hybrid laser illuminating method that has made up impulse wave and continuous wave.Yet preferably moment is carried out the heat treatment of laser radiation in several microseconds to tens second, and this depends on the thermal resistance of substrate.Use infrared lamp or in inert gas atmosphere, send Halogen lamp LED, carry out rapid thermal annealing (RTA) by quick elevated temperature and heating several microseconds to a few minutes from ultraviolet ray to ultrared light.Because moment carries out this processing, so this processing has the advantage that the film on top surface is only heated and do not influence underlying membrane fully.
At this, contain the composition (below, be called Ag glue) of Ag and suitably dry or cure and form first conductive layer that has from 600nm to 800nm thickness with aforesaid laser beam irradiation or heat treatment by selective bleed.When at O 2When curing in the atmosphere, organic material decomposes as the adhesive (thermosetting resin) that is included in the Ag glue, and has obtained to comprise hardly the Ag film of organic material.In addition, the film surface can be made into smoothly.Owing to evaporate solvent in the glue by the Ag glue of under reduced pressure releasing, but therefore can omit after a while heat treatment or shortening heat processing time.
In this Implementation Modes, form comprise silver as the conductive layer of key component as first film figure.Note, form conductive layer, so that conductive particulate overlaps mutually three-dimensionally and brokenly.That is, conducting film is made of three-dimensional bonded particulate.Therefore, surperficial little unevenness of conductive layer.In addition, melt granules is with the group of formation, and this depends on the temperature and time of electric conduction of heating layer.This temperature and time according to the electric conduction of heating layer increases size.In this case, the surface of conductive layer becomes obviously uneven.Notice that in some cases, the zone of particle fusion can have polycrystalline structure.
In this Implementation Modes, first conductive layer has been described; Yet, can suitably use semiconductor layer or insulating barrier replaces conductive layer.
Subsequently, photosensitive resin 103 is released or be coated on first conductive layer 102, as shown in Figure 1B.Will be to light activated negative light-sensitive resin or positive light-sensitive resin are used as photosensitive resin from ultraviolet light to infrared light.Photosensitive resin material such as epoxy resin, allyl resin, phenolic resins, novolac resin, melmac or polyurethane resin are used as photosensitive resin.Alternatively, can use photosensitive organic material such as benzocyclobutene, parylene, flare or polyimides.And, provide as typical positive light-sensitive resin and to have novolac resin and be the photosensitive resin of the naphthoquinones basudin compound of sensitising agent, provide photosensitive resin as typical negative light-sensitive resin with base resin and diphenyl silanediol (diphenylsilanediol), acid-producing agent etc.In this Implementation Modes, use the negative light-sensitive resin.
Subsequently, by using the direct projection arrangement of laser beam to shine photosensitive resins 103 with laser beam 104.In this Implementation Modes, carry out laser beam irradiation by the substrate that direction moves shown in the arrow in the drawings.
At this, the direct projection arrangement of laser beam is described with reference to figure 8.As shown in Figure 8, the direct projection arrangement 1001 of laser beam comprises: personal computer (below be called PC) 1002 is used for carrying out various types of controls with laser beam irradiation; Laser oscillator 1003 is used for outgoing laser beam; The power supply 1004 of laser oscillator 1003; Optical system (ND filter) 1005 is used for attenuated laser beam; Acousto-optic modulator (AOM) 1006 is used for the intensity of modulating lasering beam; Optical system 1007 has the lens that are used to amplify or reduce the cross section of laser beam, is used to level crossing that changes light path etc.; Substrate mechanically moving device 1009 has X platform and Y platform; D/A converter 1010 is used for converting the control data from PC output to digital-to-analog; Driver 1011 is used for according to the aanalogvoltage guide sound optical modulator (AOM) 1006 from D/A converter output; With driver 1012, be used to export the drive signal that drives substrate mechanically moving device 1009.
The laser oscillator of ultraviolet light, visible or infrared light of can vibrating can be used as laser oscillator 1003.The gas laser oscillator of the excimer laser oscillator of KrF, ArF, XeCl, Xe etc., He, He-Cd, Ar, He-Ne, HF etc., YAG, the YVO of use crystal as being doped with Cr, Nd, Er, Ho, Ce, Co, Ti or Tm 4, YLF or YALO 3Solid laser oscillator, GAN, GaAs, the semiconductor laser oscillator of GaAlAs, InGaAsP etc. can be used as laser oscillator.Note, preferably any of second to the 5th harmonic wave of first-harmonic is used for solid laser oscillator.
Subsequently, described and a kind ofly be used for using the direct projection arrangement of laser beam light-sensitive material to be exposed to the method for light.When substrate 1008 being installed on the substrate mechanically moving device 1009, PC 1002 detects the position of the label of mark on substrate by not shown camera.Next, PC 1002 produces the mobile data of mobile substrate mechanically moving device 1009 based on the projection pattern data of the position data of the label that detects and input in advance.Thereafter, PC 1002 is by the output light quantity of driver 1011 controls from acousto-optic modulator (AOM) 1006.Therefore, having decayed by optical system (ND filter) 1005 after the laser beam of laser oscillator 1003 outputs, be scheduled volume with fader control by acousto-optic modulator (AOM) 1006.On the other hand, light path and the beam shape from the laser beam of acousto-optic modulator (AOM) 1006 output changes by optical system 1007 and scioptics aggregation laser bundle.Afterwards, be coated to the light-sensitive material of substrate and it is exposed to light with the wave beam irradiation.At this moment, according to the mobile data that produces by PC 1002, with the mobile directions X and the Y direction of being controlled at of substrate mechanically moving device 1009.Therefore, use the laser beam irradiation predetermined portions, and carry out the exposure of light-sensitive material.
Therefore, in the zone of the laser beam irradiation shown in Fig. 1 C, form mask pattern 105.Owing to use the negative light-sensitive resin at this, therefore the zone with laser beam irradiation becomes mask pattern.When laser beam flying time a time, the width of mask pattern is corresponding to the width of laser beam.Thus, launch laser beam, have the mask pattern of minute widths with formation with shorter wavelength.
At this, mobile substrate, and use the laser beam elective irradiation; Yet, the invention is not restricted to this.Can launch laser beam by on the X-Y direction of principal axis, carrying out laser beam flying.In this case, preferably optics polygonal mirror or galvanometer mirror (galvanometer mirror) are used in the optical system 1007.
Subsequently, use mask pattern 105 to come to come etching first conductive layer 102 by known method such as dry etching or wet etching as mask.As a result, form second conductive layer 106, as shown in Fig. 1 D with narrow width.Note, second conductive layer 106 can be used as the gate electrode of semiconductor element after a while.
Then, by droplet drainage method the 3rd conductive layer 107 of releasing, as shown in Fig. 1 E.Form the 3rd conductive layer 107, with second conductive layer 106 that partly overlaps.Afterwards, on the 3rd conductive layer, carry out dry and cure in one or two step.
According to above-mentioned steps, film figure with minute widths and grid wiring have been formed with minute widths.
(Implementation Modes 2)
A kind of method that is used to make semiconductor element has below been described.Use TFT to describe following Implementation Modes as semiconductor element; Yet, the invention is not restricted to this.Can use organic semiconductor transistor, diode, MIM element, memory element, diode, photo-electric conversion element, capacity cell, resistive element etc.
In this Implementation Modes, with reference to figure 3A to 3F the manufacture method of channel-etch type TFT as semiconductor element described, wherein channel-etch type TFT is a kind of among reverse interleaved type (bottom gate type) TFT.
As shown in Fig. 3 A, above substrate 101, form first conductive layer 302.With the formation method of droplet drainage method as first conductive layer 302.In addition, can be with the electric conducting material identical suitably as the material of first conductive layer with first conductive layer 102 described in the Implementation Modes 1.
Before forming first conductive layer 302, preferably form the basic unit that uses metal material such as Ti (titanium), W (tungsten), Cr (chromium), Ta (tantalum), Ni (nickel) or Mo (molybdenum) or its oxide to form by sputtering method or method of evaporating in the surface of substrate 301.This basic unit is formed thickness from 0.01nm to 10nm, but because it forms extremely thinly, so it needn't have a layer structure.Note, provide this basic unit to have first conductive layer of good adhesion, and when having obtained enough adhesivenesses, it can be omitted with formation.Using under the situation of conducting film as basic unit, can use first mask pattern and first conductive layer to come etching basic unit.
Subsequently, first photosensitive resin 103 is released or be coated on first conductive layer 302.In this Implementation Modes, the negative light-sensitive resin is released on first conductive layer by the droplet drainage method.Then, partly shine photosensitive resin to be exposed to light and to develop, form first mask pattern 311 shown in Fig. 3 B thus with laser beam 104.
Next, use first mask pattern 311 to come etching first conductive layer 302, to form gate electrode 321, as shown in Fig. 3 C as mask.At this, come etching first conductive layer by dry etching.Afterwards, by using the processing of removing solution, the ashing treatment of using oxygen etc. to remove first mask pattern.
Subsequently, order forms first dielectric film 322, first semiconductor film 323 and second semiconductor film 324 on substrate and gate electrode.Each of first dielectric film 322, first semiconductor film 323 and second semiconductor film 324 contains gate insulating film, channel formation region, the source/drain region that is used separately as after a while the TFT that will form.
As plasma CVD method or sputtering method first dielectric film 322 is formed silicon nitride, silica or contain the individual layer of other dielectric films of silicon by film formation method, or have its stacked structure.In addition, first dielectric film preferably has the stacked structure of the silicon nitride film (silicon oxynitride film), silicon oxide film and the silicon nitride mould (silicon oxynitride film) that contact with gate electrode from a side.Because gate electrode contacts with silicon nitride film in this structure, therefore can prevent because the degeneration that oxidation causes.
The semi-conductive film that has the arbitrary state that is selected from amorphous semiconductor, half amorphous semiconductor (being also referred to as SAS), micro-crystallization semiconductor and crystal semiconductor by use forms first semiconductor film 323, noncrystalline state and crystalline state are mixed in half amorphous semiconductor, can observe the crystal grain from 0.5nm to 20nm in the micro-crystallization semiconductor in amorphous semiconductor.Particularly, wherein can observe from the micro-crystallization state of the crystal grain of 0.5nm to 20nm and be called crystallite (μ c).In either case, but used thickness from the semiconductor film that mainly contains silicon, SiGe (SiGe) etc. of 10nm to 60nm.
The SAS meaning is to have intermediate structure between non crystalline structure and the crystalline texture (comprising monocrystalline and polycrystalline) and the semiconductor with third state stable aspect free energy.This SAS comprises the crystal region with shortrange order and distortion of lattice.Can observe crystal region in the subregion at least in film from 0.5nm to 20nm.When containing silicon as main component, Raman spectrum is transferred to and is lower than 520cm -1Frequency side.In X-ray diffraction, observe the diffraction maximum of (111) or (220) that the lattice by silicon is caused.In addition, SAS contains at least 1 atom % or more hydrogen or halogen with the termination dangling bonds.
SAS can decompose and obtains by silicide gas being carried out glow discharge.Provide SiH as typical silicide gas 4In addition, Si 2H 6, SiH 2Cl 2, SiHCl 3, SiCl 4, SiF 4Deng also can be used as silicide gas.One or more of rare gas in available hydrogen or fluorine or hydrogen or fluorine and helium, argon, krypton and the neon dilute silicide gas, thereby form SAS easily.At this moment, preferably dilute silicide gas, so that thinner ratio is from 10 times to 1000 times.Alternatively, SAS can be by using Si 2H 6And GeF 4Form with the method for use with the helium dilution.Preferably under reduced pressure carry out by glow discharge decomposing shape film forming, and can carry out near under the pressure from 0.1Pa to the 133Pa scope.Can provide from 1MHz to 120MHz, preferably the high frequency power from 13MHz to 60MHz to be to carry out glow discharge.Substrate heating temperature is preferably 300 ℃ or still less, and the substrate heating temperature of recommending is from 100 ℃ to 250 ℃.
Can be by coming the crystallization amorphous semiconductor film to form the crystal semiconductor film by heating or laser radiation.Alternatively, the crystal semiconductor film can be formed directly in.In this case, can be by using fluorine base gas such as GeF 4Or F 2And silylation gas such as SiH 4Or Si 2H 6And utilize heating or plasma directly to form the crystal semiconductor film.
Second semiconductor film 324 conducts electricity, and adds the element that belongs to family 15 that is generally phosphorus or arsenic under the situation that forms the n channel TFT.Under the situation that forms the p channel TFT, add the element that belongs to family 13 that is generally boron.By the plasma CVD method, use the silication gas that is added with the gas that comprises the elements, such as boron, phosphorus or the arsenic that belong to family 13 or 15, form second semiconductor film.After forming semiconductor film, the solution that will comprise the element that belongs to family 13 or 15 is coated on the semiconductor film and uses laser beam irradiation; Thus, can form second semiconductor film of conduction.As laser beam.Can suitably use the laser beam that sends from known impulse wave laser or continuous-wave laser.
Subsequently, second photosensitive resin 331 is released or be coated on second semiconductor film 324, as shown in Fig. 3 D.At this, by the droplet drainage method negative light-sensitive resin of releasing, to form second photosensitive resin 331.
Next, shine second photosensitive resin 331, and it is developed to form second mask pattern 341 and 342 shown in Fig. 3 E with laser beam 332.In this Implementation Modes, negative resist is used as second photosensitive resin; Therefore, in the zone of laser beam 332 irradiations, form second mask pattern 341 and 342.
Then, come etching second semiconductor film 324 by using second mask pattern 341 and 342, to form first semiconductor regions (source/drain region) 351 and 352.Afterwards, remove second mask pattern.
According to similar step, release or apply, with laser beam irradiation and the 3rd photosensitive resin that develops to form the 3rd mask pattern.By using the 3rd mask pattern to come etching first semiconductor layer 323, to form second semiconductor region 353.
By Cl 2, BCl 3, SiCl 4, CCl 4Deng for the chlorine-based gas of representative, with CF 4, SF 6, NF 3, CHF 3Deng being the fluorine base gas of representative or O 2The etching gas that can be used as first semiconductor film and second semiconductor film.
Then, by the electric conducting material of releasing with the droplet drainage method, formation source/drain electrode 354 and 355 above first semiconductor region 351 and 352.Dissolving or the analog material that is used for first conductive layer 302 that is dispersed in the solvent can be used as electric conducting material.At this, selective bleed Ag glue, and suitably carry out laser beam irradiation as mentioned above or by heat treated drying and curing.Therefore, formation has thickness each electrode from 600nm to 800nm.
Alternatively, be pre-formed conducting film, and form light-sensitive material by the droplet drainage method by sputtering method etc.Afterwards, by forming electrode with the formation pattern with by etching with the laser radiation light-sensitive material.In this case, use the positive light-sensitive material.
Subsequently, preferably above source/drain electrode 354 and 355, form passivating film.As plasma CVD method or sputtering method, use silicon nitride, silica, oxidized silicon nitride, silicon oxynitride, aluminum oxynitride, aluminium oxide, diamond-like carbon (DLC), carbonitride (CN) or other insulating material to form passivation layer by film formation method.
According to above-mentioned steps, can make channel-etch type TFT.
(Implementation Modes 3)
The step of making raceway groove protection type (raceway groove stepping type) TFT is described in this Implementation Modes with reference to figure 4A to 4E.
With identical in Implementation Modes 2, after carrying out the step shown in Fig. 4 A and the 4B, as shown in Fig. 4 C, above substrate 101, form gate electrode 321, first dielectric film 322 and first semiconductor film 323.
Subsequently, form diaphragm 401 in the zone above first semiconductor film 323 that overlaps with gate electrode 321.Preferably by using the thermal resistance high molecular weight material to form diaphragm.Preferred use have aromatic rings or heterocycle as main chain, have little fat family part and comprise the high molecular weight material of high polarity heteroatom group.As the representative instance of this high molecular weight material, provide polyimides, polybenzimidazoles etc.Under the situation of using polyimides, composition to the first semiconductor film 323 from nozzle is released and contained polyimides afterwards, cures 30 minutes to form diaphragm under 200 ℃.
Then, with identical in Implementation Modes 2, form second semiconductor film (conductive semiconductor film) 324.With identical in the Implementation Modes 2, form second photosensitive resin 331.Shine second photosensitive resin with laser beam 332, and it is developed to form second mask pattern 411 and 412 shown in Fig. 4 D.
By using second mask pattern 411 and 412, etching second semiconductor film is to form first semiconductor region (source/drain region) 413 and 414; In addition, etching first semiconductor film is to form second semiconductor region (channel formation region) 415.At this moment, owing to above first semiconductor film, formed diaphragm 401, therefore, the zone of first semiconductor film of not etching and gate electrode crossover.
Subsequently, formation source/drain electrode 354 and 355 is as shown in Fig. 4 E.
According to above-mentioned steps, can form raceway groove protection type TFT.Because diaphragm 401 as channel protection film, therefore is added with in the semiconductor film of impurity in etching, can protect first semiconductor film that will become channel region not to be subjected to owing to cross the damage of etching etc.This makes and can obtain the TFT that has stability characteristic (quality), have high mobility.
(Implementation Modes 4)
The step of making staggered TFT is described in this Implementation Modes with reference to figure 5A to 5G.
Above substrate 101, form first conductive layer 302, as shown in Fig. 5 A.Next, with on 501 coatings of first photosensitive resin or first conductive layer of releasing.At this, positive light-sensitive is used as first photosensitive resin.Then, with laser beam 104 irradiations first photosensitive resin.Here shine the zone that will become channel formation region after a while with laser beam 104.Afterwards, develop to form first mask pattern 511 and 512, as shown in Fig. 5 B.
By using first mask pattern 511 and 512 to come etching first conductive layer 302, with formation source/drain electrode 513 and 514 as mask.Afterwards, remove first mask pattern.
Subsequently, form first semiconductor film, and with on second photosensitive resin coating or first semiconductor film of releasing, and then with laser beam irradiation and development to form second mask pattern 521 and 522.By using second mask pattern to come etching first semiconductor film to form first semiconductor region 523 and 524 (source/drain regions) as mask.At this, first semiconductor film be conduction semiconductor film and can by use with Implementation Modes 2 in the similar material formation of second semiconductor film 324 described.In addition, the positive light-sensitive resin is used as second photosensitive resin (Fig. 5 C).Afterwards, remove second mask pattern.
Form second semiconductor film, and with on the coating of the 3rd photosensitive resin or second semiconductor film of releasing, and use laser beam irradiation and development then, to form the 3rd mask pattern 531.By using the 3rd mask pattern to come etching second semiconductor film, to form second semiconductor region 532 as mask.At this, form second semiconductor film by using the material similar with first semiconductor film 323 of description in the Implementation Modes 2.The negative light-sensitive resin is used as the 3rd photosensitive resin (Fig. 5 D).Then, remove the 3rd mask pattern.
Subsequently, form first dielectric film 541, as shown in Fig. 5 E.By using the material similar to form first dielectric film with first dielectric film 541 of description in the Implementation Modes 2.Second conducting film is released between first semiconductor region (source/drain region).With the 4th photosensitive resin coating or release on it, and then with laser beam irradiation and develop, to form the 4th mask pattern.By using the 4th mask pattern to come etching second conductive layer, to form gate electrode 542 as mask.At this, can form second conductive layer by using the material similar to first conductive layer 302.The negative light-sensitive resin is used as the 4th photosensitive resin.Then, remove the 4th mask pattern.
Subsequently, the 5th photosensitive resin 543 integral body are coated in the substrate top, and shine the zone that will form contact hole after a while with laser beam 544, and to its development, to form the 5th mask pattern 551, as shown in Fig. 5 F.By using the 5th mask pattern to come etching first dielectric film, exposing source/drain region 513 and 514, and form gate insulating film 552 as mask.At this, the positive light-sensitive resin is used as the 5th photosensitive resin.Then, remove the 5th mask pattern.
Subsequently, release the 3rd conductive layer 561 and 562 are as shown in Fig. 5 G.
According to above-mentioned steps, formed alternating expression TFT.
(Implementation Modes 5)
The manufacture method of TFT with top gate structure has been described in this Implementation Modes with reference to figure 6A to 6E.
Above substrate 101, form first dielectric film 582, as shown in Fig. 6 A.Provide first dielectric film to enter into after a while with the TFT that forms to prevent the impurity from substrate 101.Form film such as silicon oxide film, silicon nitride film or silicon oxynitride film as first dielectric film by known method such as PVD method or CVD method.When this material that is generally quartz etc. by use forms substrate 101, do not need to form first dielectric film 582, this material makes the impurity from substrate 101 not enter among the TFT.
Above first dielectric film 582, form semiconductor film 583, and with on 584 coatings of first photosensitive resin or the semiconductor film of releasing.With laser beam 104 irradiation first photosensitive resins and with its development, to form first mask pattern 585, as shown in Fig. 6 B.Can form this semiconductor film by using the material similar with first semiconductor film 323 of description in the Implementation Modes 2.
Subsequently, by using first mask pattern, to form semiconductor region 586 as the mask etching semiconductor film.Afterwards, remove first mask pattern.
Above semiconductor region, form gate insulating film 587, and above gate insulating film 587, form first conductive layer 588, as shown in Fig. 6 C.By suitably use with Implementation Modes 2 in those similar materials of first conductive layer 302 of description form first conductive layer with similar manufacturing step.Second photosensitive resin 589 is released or be coated on first conductive layer.It will form the regional of gate electrode and after a while with its development, to form second mask pattern 591, as shown in Fig. 6 D with laser beam 590 irradiation.
By using first mask pattern 591 to come etching first conductive layer 588, to form gate electrode 592 as mask.Then, remove first mask pattern.
Use gate electrode as mask, come doped semiconductor area with the impurity element that belongs to family 13 or 15, with formation source/drain region 593 and 594, as shown in Fig. 6 E.Reference number 595 expression channel formation regions.
Notice that the solution that can comprise the impurity element that belongs to family 13 or 15 by being come by the droplet drainage method partly to release is to the semiconductor region 586 shown in Fig. 6 B and form source/drain region with laser beam irradiation solution then.In this case, the solution that will comprise the impurity element that belongs to family 13 or 15 is released and will be become after a while on the semiconductor region in source/drain region.
Subsequently, form second dielectric film (interlayer dielectric) 596.According to this step of describing in the Implementation Modes 4, form mask pattern and etching second dielectric film and gate insulating film to form contact hole.Afterwards, form conducting film 597 and 598.
According to above-mentioned steps, can form TFT with top gate structure.
(Implementation Modes 6)
The method of the formation contact hole that is different from Implementation Modes 4 and 5 is described in this Implementation Modes with reference to figure 7A to 7E.
According to Implementation Modes 4, form the TFT of alternating expression, as shown in Figure 7A.At this, substrate 101 is provided active/drain electrode 513 and 514, first semiconductor region 523 and 524, be formed on second semiconductor region 532, first dielectric film 541 and the gate electrode 542 of first semiconductor region top between source/drain electrode.
The solution that will form the liquid repellence surface by the droplet drainage method is released on the zone that source/drain electrode and first dielectric film 541 overlap, to form first mask pattern 571 and 572, as shown in Fig. 7 B.
The solution that has formed the liquid repellence surface by use forms first mask pattern.For example, will be expressed as chemical formula R n-Si-X (4-n)The silane coupler of (n=1,2, or 3) is as the example of the liquid composite that has formed the liquid repellence surface.At this, R represents to contain the group of suitable inertia such as the material of alkyl.With by but the hydrolysising group of bonding or the adsorbed water on substrate surface forms X with the hydroxyl condensation, as halogen, methoxy group, ethoxy group or acetic acid group.
In addition, fluid-repellency can contain the fluothane group as the fluorine-based silane coupler of R (fluoroalkyl silane (below, be called FAS) by use) further strengthen, its representative instance as silane coupler provides.The R of FAS has by (CF 3) (CF 2) X(CF 2) y(x: the integer in from 0 to 10 scope, and y: the structure of the Biao Daing integer in from 0 to 4 scope).When a plurality of Rs or Xs and Si combination, Rs or Xs can all identical or mutual differences.As FAS, provide 17 carbon fluorine tetrahydro decyl triethoxy-silicanes, 17 carbon fluorine tetrahydro decyltrichlorosilanes, 13 carbon fluorine tetrahydro octyl group trichlorosilanes, trifluoro propyl trimethoxy silane etc. usually.
Form the solvent on liquid repellence surface, for example, alkyl solvent or oxolane such as n pentane, n hexane, n heptane, n octane, n decane, two pentamethylene, benzene,toluene,xylene, durol, indenes, tetrahydronaphthalene, decahydronaphthalenes or isotriacontane are as the solvent of the solution that forms the liquid repellence surface.
In addition, having the material (fluoro resin) of fluorocarbon chain can be as the example of the liquid composite that forms the liquid repellence surface.As fluoro resin, can use polytetrafluoroethylene (PTFE), perfluoro alkoxy alkane (PFA), perfluoro vinyl-propylene copolymer (PFEP), vinyl-TFE copolymer (ETFE), polyvinylidene fluoride (PVDF), polytrifluorochloroethylene (PCTFE), ethylene-chlorotrifluoro-ethylene copolymer (ECTFE), poly-four-fluorinated ethylene-perfluoro two to dislike luxuriant copolymer (TFE/PDD), polyvinyl fluoride (PVF) etc.
The organic material that does not form liquid repellence surface (that is, having formed the lyophily surface) can be used for mask pattern.In this case, use CF 4Plasmas etc. are handled organic material to form the liquid repellence surface.For example, can use wherein water-soluble resin such as polyvinyl alcohol (PVA) to be mixed into solvent such as H 2Material among the O.And, use PVA capable of being combined and another kind of water-soluble resin.Even have at mask pattern under the situation on liquid repellence surface, also can wait and further strengthen fluid-repellency by carrying out plasma treatment.
Subsequently, apply or release formed the lyophily surface solution to form second mask pattern 573 to 575.As the representative instance of the solution that has formed the lyophily surface, provide organic resin such as acrylic resin, polyimide resin, melmac, mylar, polycarbonate resin, phenolic resins, epoxy resin, polyacetals, polyethers, polyurethane, polyamide (nylon), furane resins or dially phthalate resin, siloxanes or poly-silazane.And, can use solution such as water, ethanol, ether, dimethyl formamide, dimethylacetylamide, dimethyl sulfoxide (DMSO), N-methyl pyrrolidone, hexamethyl phosphoramide, chloroform or the carrene of polar solvent.Can be with the method as the solution of coating second mask pattern such as droplet drainage method, ink ejecting method, spin coating method, method of roll coating, groove coating method.
Because first mask pattern 571 and 572 has the liquid repellence surface, therefore in the outer periphery of first mask pattern, that is, in the zone that does not form first mask pattern, form second mask pattern 573 to 575.
Replace above-mentioned steps, can form second mask pattern by the solution on coating formation lyophily surface after the solvent of dry first mask pattern.In this case, because first mask pattern 571 and 572 has the liquid repellence surface, therefore second mask pattern 573 to 575 is formed in the outer periphery of first mask pattern, promptly is formed in the zone that does not form first mask pattern.In addition, the composition of first mask pattern remains on the surface of first dielectric film 541 or is penetrated in this film.
Subsequently, come etching first mask pattern 571 and 572 and first dielectric film 541 as mask, partly expose source/drain electrode, as shown in Fig. 7 C by using second mask pattern.Reference number 581 expression gate insulating films.
After having removed second mask pattern, form conductive layer 561 and 562, as shown in Fig. 7 D.
Note, second mask pattern 573 to 575 can be used as interlayer dielectric, and not need, and then, form conductive layer 561 and 562, as shown in Fig. 7 E its removal.
(Implementation Modes 7)
In this Implementation Modes, described and in above-mentioned Implementation Modes, to be used for the droplet bleeder that pattern forms.In Figure 24, the zone 1830 that will form a panel shown in broken lines on substrate 1800.
Figure 24 shows the pattern of pattern as the droplet bleeder of wiring that be used to form.Droplet bleeder 1805 has head, and this head has a plurality of nozzles.Described the situation with three heads (1803a, 1803b and 1803c) in this Implementation Modes, wherein each of three heads all provides ten nozzles.Yet, wait the number that nozzle and head are set according to processing region, step.
Head is connected to control device 1807, and control device controls head by computer 1810, with the current pattern of projection.Can be by for example usage flag 1811 be as determining projected position with reference to point, wherein mark 1811 is formed at the top such as substrate 1800 grades that is fixed on the platform 1831.Alternatively, can determine the position of projection by the edge that uses substrate 1800 as the reference point.Reference point detects as CCD by imaging device 1804, and converts thereof into digital signal by image processing apparatus 1809.Then, discern this digital signal, and produce control signal and it is transferred to control device 1807 by computer 1810.When projection pattern by this way, pattern form spacing between face and the nozzle tip be arranged to from 0.1cm to 5cm, preferably from 0.1cm to 2cm, more preferably near 0.1cm.This spacing is shorter to be improved the landing accuracy of droplet by making, as mentioned above.
At this moment, the pattern-information that will form above substrate 1800 is stored in the storage medium 1808, and based on this information control signal is transferred to control device 1807, to control head 1803a, 1803b and 1803c respectively.In other words, each nozzle of 1803a, 1803b and 1803c is released and is comprised the droplet of different materials from the head.For example, the nozzle of head 1803a and 1803b can be released and be comprised that the droplet of insulating film material, the nozzle of head 1803c can be released and comprise the droplet of conducting membrane material.
And, also can independently control the nozzle of head.Owing to can independently control nozzle, therefore can release from specific nozzle comprises the droplet of different materials.For example, head 1803a can provide the nozzle of the droplet that comprises conducting membrane material of releasing and the nozzle of the droplet that comprises insulating film material of releasing.
Release under the situation about handling carrying out droplet on the large tracts of land, as the formation step of interlayer dielectric, preferably releasing from all nozzles comprises the droplet of layer insulation membrane material.And can release from all nozzles of a plurality of heads comprises the droplet of layer insulation membrane material.Therefore, can improve output.Nature, in interlayer dielectric forms step, the droplet that can comprise the layer insulation membrane material and carry out the droplet processing of releasing in large tracts of land by making nozzle repeatedly scan substrate by releasing from a nozzle.
Pattern on big mother glass forms can be by with the zigzag moving-head or move back and forth head and carry out.At this moment, can make head with relative scanning substrate repeatedly.When head scanned substrate, preferred head tilted to moving direction.
When a plurality of panels were formed by big motherboard glass, head preferably had the width of the width that equals a panel.This is because pattern can be formed on by moving-head and once form in the zone 1830 of a panel; Thus, can expect the raising output.
Head can have the narrow width of width of ratio panels.At this moment, but a plurality of head arranged in series with narrow width to have the width of the width that equals a panel.Can prevent by a plurality of heads that arranged in series has a narrow width along with the become generation of the more and more wideer head-bent that relates to of head width.Nature can repeatedly form pattern by moving the head with narrow width.
Preferred step of under reduced pressure carrying out the solution droplet of releasing that undertaken by aforesaid droplet drainage method.This is because at the solvent from the solution evaporating liquid during solution drops on the cycle on the processed object of releasing, and thus, can omit the drying of solution and cure this two steps.Owing on surface of conductors, do not form oxide-film etc., therefore preferably under reduced pressure carry out this step.In addition, can in nitrogen atmosphere or organic gas atmosphere, the drip step of solution.
Can be with piezoelectric approach as the droplet drainage method.Because piezoelectric approach has the high-freedom degree of higher ink droplet controllability and ink selection, so this piezoelectric approach also is used for ink-jet printer.Notice that piezoelectric approach comprises crooked type (usually, MLP (multi-layer piezoelectric) type), piston-type (MLChip (the multi-layer ceramics superset becomes piezoelectric) type usually), sidewall type and roof type.Alternatively, use the droplet drainage method of the so-called bubble ink ejecting method (bubble jet method) (hot method) that makes heating element to produce heat, release solution according to the solvent use of solution thus to produce bubble.
[embodiment 1]
Described in the present embodiment by using the mask pattern of laser formation with reference to figure 25A and 25B.
With thickness is that the positive light-sensitive resin of 1.5 μ m is coated on the substrate, and by 90 ℃ down heating cured in 90 seconds temporarily.The novolac resin that will have sensitising agent is as the positive light-sensitive resin.
Subsequently, with laser radiation positive light-sensitive resin, and be exposed to light.Use continuous wave Nd:YVO for laser oscillator this moment 4The laser that sends from laser oscillator has the wavelength of 532nm and is of a size of the hot spot of 300 μ m * 20 μ m.
Afterwards, by using 2.38% triethylammonium tetrakis hydroxide (TMAH) the positive light-sensitive resin that develops.
Table 1 shows the translational speed of reference laser energy and platform and whether has carried out the result who develops.
Relation between the development of the translational speed of table 1. laser energy, platform and positive light-sensitive resin
Laser energy (W) Platform translational speed (cm/sec) Develop
6 50 Be
40 Be
30 Be
25 Be
8 100 Be
75 Be
50 Be
40 Be
As shown in table 1, when laser energy is 6W, can to the 50cm/ platform translational speed of second, develop second, and when laser energy is 8W, can to the 100cm/ platform translational speed of second, develop second from 40cm/ from 25cm/.
Figure 25 A shows the surface of the positive light-sensitive resin that develops with laser radiation with the platform translational speed of the laser energy of 6W and 25cm/ second, and it is observed with light microscope (reflection bright field pattern).Figure 25 B is the schematic diagram of Figure 25 A.Compare with the zone 1900 of laser radiation of no use, in using the zone 1901 of laser radiation, form the groove of width near 400 μ m.When using pin type profile meter DEKTAK 3During ST (being made by ULVAC company), the degree of depth of groove is 1.5 μ m.
[embodiment 2]
Next, referring to figs. 17A through 21 the method that is used to make the active matrix substrate and has its display panel is described.LCD panel is described present embodiment as display panel.Figure 17 A to 17G and Figure 18 A to 18D are shown schematically in the longitudinal plane structure of pixel portion and splicing ear part.Figure 19 to 21 shows the planar structure corresponding to line A-B and line C-D.
As shown in Figure 17 A, the surface of oxidation substrate 800 under 400 ℃ temperature has the dielectric film 801 of 100nm thickness with formation.Dielectric film is as after a while with the etch stop film of the conducting film that forms.Subsequently, above dielectric film 801, form first conducting film 802 by the droplet drainage method and by the droplet drainage method with first photosensitive resin 803, first conductive layer of releasing.Then, develop to form first mask pattern 805 with laser 804 irradiation first photosensitive resins and to it.
The AN100 glass substrate of being made by Asahi Glass company is used as substrate 800.As first conductive layer 802, the Ag that releases (silver) Dispersion of Particles solution therein, and by being dried in 30 minutes 100 ℃ of following heating, in the atmosphere with 10% oxygen concentration, cured in one hour by heating down at 230 ℃ afterwards.As first photosensitive resin 803,,, cure then its drying by the droplet drainage method negative light-sensitive resin of releasing temporarily.From Nd:YVO 4The laser that laser sends is as laser 804.
Subsequently, by using first mask pattern to come partly etching first conductive layer to form gate wiring layer 811, as shown in Figure 17 C.By using removal solution to remove first mask pattern.Form gate wiring layer 812 and capacitor wiring layer 813 by the droplet drainage method.Notice that Figure 17 C is shown schematically in longitudinal plane structure, and shown in Figure 19 corresponding to the planar structure of line A-B and line C-D, therefore also can relate to it.
Form gate insulating film 814 by the plasma CVD method, as shown in Figure 17 D.In being heated to 400 ℃ chamber,, use SiH by the plasma CVD method 4And N 2O (flow velocity, SiH 4: N 2=1: 200), (O:63.9% is Si:31.7%) as gate insulating film 814 for H:1.8%, N:2.6% to form the silicon oxynitride film with 110nm thickness.
Form first semiconductor film 815 and second semiconductor film 816 that demonstrates n type conductivity.Has the amorphous silicon film of 150nm thickness as first semiconductor film 815 by the formation of plasma CVD method.After having removed lip-deep first oxide-film of amorphous silicon film, form half amorphous silicon film with 50nm thickness by using silane gas and phosphine gas.
The surface of handling second semiconductor film with Ozone Water, and on the surface of second oxide-film, form thin silicon oxide film.Subsequently, by the UV rayed in oxygen atmosphere, thermal oxidation process, with Ozone Water or comprise hydrogen peroxide treatment of hydroxyl etc., on the surface of second semiconductor film, form silicon oxide film, improving the lip-deep wettability of second semiconductor film, and at the whole surface diffusion aqueous solution of second semiconductor film.Silicon oxide film can prevent that impurity is from entering into semiconductor film with the light-sensitive material that applies after a while.Second photosensitive resin 817 is released to it.As second photosensitive resin,, and be dried negative light-sensitive resin second semiconductor film of releasing by the droplet drainage method, cure then temporarily.Shine second photosensitive resin 817 with laser 818, and it is developed to form second mask pattern 821 and 822, as shown in Figure 17 E.
By using second mask pattern to come etching second semiconductor film 816, to form first semiconductor region 823 and 824 (source/drain regions).Has CF by use 4: O 2The mist of=10: 9 velocity ratios comes etching second semiconductor film 816.Afterwards, remove solution with second mask pattern 821 and 822 removals by using.
Subsequently, by in oxygen atmosphere with UV rayed, thermal oxidation process, with Ozone Water or comprise hydrogen peroxide treatment of hydroxyl etc., above first semiconductor film and second semiconductor film, form silicon oxide film.Form the 3rd mask pattern 831 then.By with the droplet drainage method first semiconductor region 823 and 824 and a part of first semiconductor film 815 above release polyimides and by 200 ℃ down heating formed the 3rd mask pattern in 30 minutes.
By using the 3rd mask pattern 831 to come etching first semiconductor film 815, to form second semiconductor region 832, as shown in Figure 17 G.Afterwards, by using removal solution to remove the 3rd mask pattern 831.Notice that Figure 17 G is shown schematically in longitudinal plane structure and figure 20 illustrates planar structure corresponding to line A-B and line C-D, therefore also relates to it.
Subsequently, form the source wiring layer 840 shown in the source layer 841 shown in Figure 18 A and drain electrode layer 842 and Figure 21 by the droplet drainage method.As source layer 841 and drain electrode layer 842, the Ag that releases (silver) be dispersed in wherein solution and by 100 ℃ down heating came in 30 minutes dry, then by at oxygen concentration be in 10% the atmosphere 230 ℃ down heating cured in one hour.Form first pixel electrode 843 to be connected to drain electrode layer 842.At this, form the tin indium oxide (ITSO) that contains silica by sputtering method, and form mask pattern by the droplet drainage method.Then, carry out etching, form first pixel electrode 843 thus, to be connected to source layer 842.Alternatively, can form first pixel electrode by the material of the top of releasing by the droplet drainage method.Note, figure 21 illustrates plane graph corresponding to line A-B among Figure 18 A and line C-D.
According to above-mentioned steps, form active matrix substrate.
Owing to made the transflective liquid crystal display panel in the present embodiment, therefore made first pixel electrode by the ITO that contains silica.Alternatively, contain tin indium oxide (ITO), zinc oxide (ZnO), tin oxide (SnO by formation 2) composition that waits predetermined pattern and form pixel electrode by curing.Under the situation of making the reflective liquid crystal display panel, can use the composition that mainly contains metallic particles such as Ag (silver), gold (Au), Cu (copper), W (tungsten) or Al (aluminium).
Form dielectric film to cover first pixel electrode 843 by printing process or spin coating method.Then, grind to form oriented film 851, as shown in Figure 18 B.Note, can form this oriented film 851 by the oblique evaporation method.
Form the sealant 860 of closed loop shape in the area peripheral edge that forms pixel by the droplet drainage method.In the closed loop inside that is formed with sealant 860, liquid crystal material drips by distributor method (dripping the method for letting out).
At this, the step of dripping the brilliant material of drainage is described with reference to figure 22A and 22B.Figure 22 A is the perspective view with the step of the brilliant material of 2701 drainages of distributor, and Figure 22 B is the sectional view that the line A-B along Figure 22 A obtains.
Let out or discharging liquid crystal material 2704 from 2701 in distributor, to cover sealed dose 2702 pixel portion 2703 of surrounding.Can pass through mobile distributor 2701, or fixing by mobile substrate 2700 and distributor 2701, form liquid crystal layer.In addition, can provide a plurality of distributors 2701, once to drip the brilliant material of drainage.
As shown in Figure 22 B, can only in sealed dose 2702 area surrounded, optionally drip and let out or discharging liquid crystal material 2704.
At this, liquid crystal material dripped let out in pixel portion.Yet, liquid crystal material can be dripped and let out on relative substrate side; Then, it is adhered on the substrate with pixel portion.
Subsequently, as shown in Figure 18 C, by the relative substrate 863 that will be provided with oriented film 861 and second pixel electrode (comparative electrode) 862 adhere on the substrate 800, carry out ultraviolet curing and in vacuo filling liquid crystal material form liquid crystal layer 864.
Sealant 860 can be mixed with filler, and further, substrate 863 can be provided with colour filter, masking film (black matrix) etc. relatively.Replace distributor method (dripping the method for letting out), can use by after adhering to relative substrate, using the infusion process (injection method) of capillarity injection liquid crystal material, as the method that forms liquid crystal layer 864.
After the gate insulating film 814 in having removed each marginal portion that is formed at gate wiring layer 812 and source wiring layer (not shown), splicing ear (will with gate wiring layer connection terminals 872 and will with unshowned source wiring layer connection terminals) adhere to therebetween anisotropic conductive layer 871, as shown in Figure 18 D.And the coupling part of each wiring layer and splicing ear all preferably seals with sealing resin.This structure can prevent that moisture from entering and worsen pixel portion.Can form LCD panel according to above-mentioned steps.
According to above-mentioned steps, can make LCD panel.Notice that the protective circuit that is generally diode etc. that is used for preventing electrostatic damage can be provided between splicing ear and the source wiring (canopy wiring) or be provided at pixel portion.In this case, by using and the similar step manufacturing of the step of above-mentioned TFT and the gate wiring layer by being connected pixel portion and the leakage or the source wiring layer of diode, protective circuit is operating as diode.
Notice that any can be used for present embodiment in the Implementation Modes 1 to 7.Described in the present embodiment and be used to make the method for LCD panel as display panel; Yet, the invention is not restricted to this.The present invention can suitably be used to comprise the active display panel of the luminescent material of organic material or inorganic material as luminescent layer, for example, DMD (Digital Micromirror Device), PDP (plasma display panel), FED (Field Emission Display), electrophoretic display device, EDD (Electronic Paper) etc.
[embodiment 3]
Subsequently, describe in order to make the active matrix substrate and to have the method for its display panel with reference to figure 29A to 34.Use luminescence display panel to describe present embodiment as display panel.Figure 29 A to 31B is shown schematically in the longitudinal plane structure of pixel portion and splicing ear part.Figure 32 to 34 shows the planar structure corresponding to line A-B, line C-D and line E-F.
As shown in Figure 29 A, the surface of oxidation substrate 600 has the dielectric film 601 of 100nm thickness with formation under 400 ℃ temperature.This dielectric film is as after a while with the etch stop film of the conducting film that forms.Subsequently, above dielectric film 601, form first conductive layer 602 and 603, and apply first photosensitive resin 604 and 605 to conductive layer by the droplet drainage method by the droplet drainage method.Then, with laser 606 and 607 irradiations, first photosensitive resin, and, first mask pattern 608 and 609 have been formed, as shown in Figure 29 B with its development.
To be used as substrate 600 by the AN100 glass substrate that Asahi Glass company makes.As first conductive layer 602 and 603, release and wherein disperseed the solution of Ag (silver) particle, and be dried in 30 minutes by heating down at 100 ℃, in atmosphere, cured in one hour then by heating down at 230 ℃ with 10% oxygen concentration.As first photosensitive resin 604 and 605, by the droplet drainage method negative light-sensitive resin of releasing, and dry, cure then temporarily.Will be from Nd:YVO 4The laser that laser sends is as laser 606 and 607.
Subsequently, by using first mask pattern 608 and 609 to come partly etching first conductive layer to form gate electrode layer 611 and 612, as shown in Figure 29 C.By using removal solution to remove first mask pattern.Form the capacitor electrode layer 610 shown in gate wiring layer 613, connecting conductive layer 614 and Figure 32 by the droplet drainage method.Notice that Figure 29 C is shown schematically in longitudinal plane structure, and figure 32 illustrates the planar structure corresponding to line A-B, line C-D and line E-F, therefore also will be referred to it.
Form gate insulating film 615 by the plasma CVD method, as shown in Figure 29 D.By in being heated to 400 ℃ chamber, using SiH 4And N 2O (velocity ratio, SiH 4: N 2=1: plasma CVD method 200), formation has the silicon oxynitride film that thickness is 110nm, and (O:63.9% is Si:31.7%) as gate insulating film 615 for H:1.8%, N:2.6%.
Form first semiconductor film 616 and second semiconductor film 617 that demonstrates n type conductivity.Form amorphous silicon film to have the thickness of 150nm, as first semiconductor film 616 by the plasma CVD method.After having removed the lip-deep oxide-film of amorphous silicon film, form half amorphous silicon film by using silane gas and phosphine gas, to have the thickness of 50nm.
Subsequently, by in oxygen atmosphere with UV rayed, thermal oxidation process, wait above second semiconductor film, to form silicon oxide film with Ozone Water or the hydrogen peroxide treatment that contains hydroxyl.Second photosensitive resin 618 and 619 is coated on second semiconductor film.As second mask pattern, with negative light-sensitive resin second semiconductor film of releasing,, cure then its drying by the droplet drainage method temporarily.Shine second photosensitive resin 618 and 619 respectively with laser 620 and 621, and with its development, to form second mask pattern 631 to 634, as shown in Figure 29 E.
By using second mask pattern 631 to 634 to come etching second semiconductor film 617, to form first semiconductor region 635 and 638 (source/drain regions), as shown in Figure 30 A.Have velocity ratio and be CF by using 4: O 2=10: 9 mist comes etching second semiconductor film 617.Afterwards, by using removal solution to remove second mask pattern 631 to 634.
Subsequently, by in oxygen atmosphere with UV rayed, thermal oxidation process, with Ozone Water or comprise that the hydrogen peroxide treatment of hydroxyl waits to form silicon oxide film above first semiconductor film and first semiconductor region.Then, release the 3rd mask pattern 641 and 642.By with the droplet drainage method with polyimides release first semiconductor region 635 to 638 and a part of first semiconductor film 616 and by 200 ℃ down heating formed the 3rd mask pattern in 30 minutes.
By using the 3rd mask pattern 641 and 642 to come etching first semiconductor film 616, to form second semiconductor region 643 and 644, as shown in Figure 30 B.Afterwards, by using removal solution to remove the 3rd mask pattern 641 and 642.Notice that Figure 30 B is shown schematically in longitudinal plane structure, and figure 33 illustrates the planar structure corresponding to line A-B, C-D and line E-F, therefore also can relate to it.
Subsequently, release or apply the 3rd photosensitive resin 651, also develop with laser 652 irradiations, as shown in Figure 30 C.The novolac resin of positive light-sensitive resin is used as the 3rd photosensitive resin 651.Therefore, form the 4th mask pattern 653, as shown in Figure 30 D.
By using the 4th mask pattern 653 to come etch-gate dielectric film 615, to expose the connecting conductive layer 614 of a part as mask.Then, by using removal solution to remove the 4th mask pattern.
Subsequently, by the droplet drainage method form the source electrode layer 661 shown in Figure 31 A and 663 and drain electrode layer 662 and 664 and Figure 34 shown in source wiring layer 665 and power line layer 666.As these conductive layers, the Ag that releases (silver) Dispersion of Particles solution therein, and heating was dried in 30 minutes under 100 ℃, cured in one hour by heating down at 230 ℃ in the atmosphere with 10% oxygen concentration then.Note, drain electrode layer 662 is connected to connecting conductive layer 614.Therefore, drain electrode layer 662 is electrically connected to gate electrode layer 612.
According to above-mentioned steps, can form active matrix substrate.
Subsequently, form first pixel electrode 667, to be connected to drain electrode layer 664.At this, can form tin indium oxide (ITO) by sputtering method, contain tin indium oxide (ITSO), zinc oxide (ZnO) of silica etc., and can form mask pattern by the droplet drainage method.Then, carry out etching, thereby form first pixel electrode 667, to be connected to drain electrode layer 664.More preferably, the target that uses ITO wherein to contain the silica of from 2% to 10% weight by sputtering method forms the tin indium oxide that contains silica.In addition, use the oxidation electric conducting material, it contains silica, and wherein indium oxide mixes with the zinc oxide (ZnO) of from 2% to 20% weight.Department forms first pixel electrode by the above-mentioned material of releasing with the droplet drainage method.
In addition, under the situation of making luminescence display panel, use the grains of composition that mainly contains metal such as Ag (silver), Au (gold), Cu (copper), W (tungsten) or Al (aluminium), wherein the light of luminescence display panel with generation is launched into the structure on the opposite side of substrate 600, that is, this luminescence display panel is the reflection luminescence display panel.As other method, can form mask pattern and additionally carry out etch process with the droplet drainage method by forming nesa coating or light reflective conductive film by sputtering method, form first pixel electrode.
Note, shown in Figure 34 corresponding to the plane graph of the A-B among Figure 31 A, line C-D and line E-F.
According to above-mentioned steps, form switching TFT 668 and drive TFT 669.
Subsequently, whole protective layer 671 and the insulating barrier 672 that forms silicon nitride or oxidized silicon nitride.After by spin coating method or the whole formation of dipping method insulating barrier 672, form opening by the etch process as shown in Figure 31 B.By using insulating barrier 672 on protective layer 671 and gate insulating film 615, to carry out etching simultaneously, to expose first pixel electrode 667 and gate wiring layer 613 as mask.When forming insulating barrier 672, needn't need etch process to form insulating barrier by the droplet drainage method.
In insulating barrier 672, form corresponding to the through hole that will form locations of pixels according to first pixel electrode 667.Can be by using inorganic insulating material such as silica, silicon nitride, silicon oxynitride, aluminium oxide, aluminium nitride or aluminum oxynitride; Acrylic acid; Methacrylic acid; The derivative of acrylic or methacrylic acid; Thermal resistance high molecular weight material such as polyimides, aromatic polyamide or polybenzimidazoles; Perhaps containing silicon, oxygen and hydrogen and comprising that by using in the siloxanes compound that material forms to start with the inorganic siloxanes of Si-O-Si key or organosiloxane based insulation material forms insulating barrier 672, the hydrogen with the silicon bonding in organosiloxane based insulation material is replaced by organic group such as methyl or phenyl.Because it is the side of insulating barrier becomes sweep wherein and continues to change and form topmost thin film and the shape of not breaking, therefore preferred by using photosensitive or non-photosensitive materials such as propylene or polyimides form insulating barrier.
After by method of evaporating or coating method such as spin coating method or ink ejecting method formation luminescent layer 673, form second pixel electrode 674, formed light-emitting component 677 thus.This light-emitting component 677 is connected to drive TFT 669.Note, insulating barrier 672 interior surface or above the moisture that absorbs by removing under 200 ℃, heat-treating under the atmospheric pressure before forming luminescent layer 673.In addition, preferably under reduced pressure heat-treating from 200 ℃ to 400 ℃, and luminescent layer 673 preferably under reduced pressure forms and need not be exposed under the atmosphere by vacuum evaporation method or droplet drainage method from 250 ℃ to 350 ℃.
In addition, can by being exposed under the oxygen plasma or with this surface of UV-irradiation, this surface carry out surface treatment on the surface of first pixel electrode 667.
Luminescent layer can inject transferring material by electric charge and make with the luminescent material that contains organic compound or inorganic compound.Luminescent layer comprises the layer of one or more types of low molecular weight organic compound, middle molecular weight organic compound and HMW organic compound.Luminescent layer can inject transmission with electronics or the combination of transmission inorganic compound is injected in the hole.
High electron transport material as in the middle of injecting transferring material at electric charge has provided metal complex, and this metal complex has quinoline ditch frame or benzoquinoline skeleton, as three (oxine) aluminium [Alq 3], three (5-methyl-6-oxyquinoline) aluminium [Almq 3], two (10-hydroxy benzo [h]-quinoline) beryllium [BeBq 2] or two (2 methyl-oxine)-4-phenylphenol-aluminium [BAlq] etc.As the high hole transferring material, specifically provide aromatic amine compound (that is the compound that, has phenyl ring nitrogen key), as 4,4 '-two [N-(1-naphthyl)]-N-phenyl-amino]-phenylbenzene [α-NPD], as 4,4 '-two [N-(3-aminomethyl phenyl) N-phenyl-amino]-phenylbenzenes [TPD], 4,4 ', 4 " (N, N-phenylbenzene-amino)-triphenylamine [TDATA] or 4-three; 4 ', 4 "-three [N-(3-aminomethyl phenyl) N-phenyl-amino]-triphenylamines [MTDATA].
In addition, the high electronics injection material as in the middle of injecting transferring material at electric charge provides alkali metal or alkaline earth metal compounds such as lithium fluoride (LiF), cesium fluoride (CsF) or calcirm-fluoride (CaF especially 2).In addition, high electronics injection material can be high electron transport material such as Alq 3Mixture with alkaline-earth metal such as magnesium (Mg).
High hole injection material as in the middle of injecting transferring material at electric charge provides metal oxide such as molybdenum oxide (MoOx), vanadium oxide (VOx), ruthenium-oxide (RuOx), tungsten oxide (WOx) or manganese oxide (MnOx).In addition, phthalocyanine dye compound such as phthalocyanine dye [H have been provided 2Pc] or copper phthalocyaine dye (CuPC).
Luminescent layer can show by provide the luminescent layer with different emission wavelength bands to carry out color to each pixel.Usually, formation is corresponding to the luminescent layer of every kind of color among R (red), G (green) and the B (indigo plant).In this case,, can increase color purity and can prevent that pixel portion has minute surface (high light), wherein the light of filter transmission emission wavelength band by filter (nonferrous layer) is provided to the pixel emission side.Provide filter (nonferrous layer) can omit circular polarizing plate etc., it needs this circle polarizing plate and its can eliminate the loss of the light that sends from luminescent layer usually.And, when seeing pixel portion (display screen) on the bias, can reduce the change of tone.
Luminescent material can comprise various materials.About the low-molecular-weight luminous organic material, can use the two cyanogen methylene of 4--2-methyl-6-[2-(1,1,7, the vinyl of 7-tetramethyl-9-julolidyl)]-4H-pyrans [DCJT], the two cyanogen methylene of 4--2-t-butyl-6-[2-(1,1,7,7-tetramethyl julolidine-9-base-vinyl)-4H-pyrans [DCJTB], periflanthene, 2, the two cyanogen-1 of 5-, 4-two [2-(10-methoxyl group-1,1,7,7-tetramethyl julolidine-9-yl) vinyl] benzene, N, N '-dimethylquinacridone [DMQd], the fragrant element 6 of beans, the fragrant plain 545T of beans, three (oxine) aluminium [Alq3], 9,9 '-two anthryls, 9,10-diphenylanthrancene [DPA], 9,10-two (2-naphthyl) anthracene [DNA] etc.In addition, also can use another kind of material.
On the contrary, the HMW luminous organic material is physically firm than low molecular weight material, and is good on the element durability.In addition, can form high molecular weight material by coating, and therefore, element is made relatively easily.Use the light emitting element structure of HMW luminous organic material identical with the light emitting element structure that uses the low-molecular-weight luminescent material basically, that is, and negative electrode/organic luminous layer/anode.Yet, when forming the luminescent layer that uses the HMW luminous organic material, all adopt double-layer structure under many circumstances.This be because with the situation of using the low-molecular-weight luminous organic material under equally be difficult to form this stacked structure.Especially, use the light-emitting component of HMW luminous organic material to have the structure of negative electrode/luminescent layer/hole transmission layer/anode.
Glow color is determined by the material of luminescent layer.Therefore, the light-emitting component that sends institute's light requirement can form by selecting suitable luminescent layer material.As the HMW electroluminescent material that is used to form luminescent layer, polyparaphenylene-Ya vinylene sill, polyparaphenylene's sill, poly-phenol thiophene sill or poly-fluorenyl material have been provided.
As polyparaphenylene-vinyl material, provided the derivative of poly-(to the penylene ethenylidene) [PPV], for example, poly-(2,5-dialkoxy-1,4-penylene ethenylidene) [RO-PPV], poly-(2-(2 '-ethyl-six oxygen)-5-methoxyl group-1,4-penylene ethenylidene) [MEH-PPV], poly-(2-(dialkoxy phenyl)-1,4-penylene ethenylidene) [ROPh-PPV] etc.As polyparaphenylene's sill, provided the derivative of polyparaphenylene [PPP], for example, poly-(2,5-dialkoxy 1,4-penylene) [RO-PPP], poly-(2, two six oxygen-1 of 5-, 4-penylene) etc.As poly-phenol thiophene sill, provided the derivative of poly-phenol thiophene [PT], for example, poly-(3-alkylthrophene) [PAT], poly-(3-hexyl thiophene) [PHT], poly-(3-cyclohexyl thiophene) [PCHT], poly-(3-cyclohexyl-4-methylthiophene) [PCHMT], poly-(3,4-dicyclohexyl thiophene) [PDCHT], poly-[(3-(4-octyl phenyl)-thiophene)] [POPT], poly-[3-(4-octyl phenyl) 2,2-two thiophene] [PTOPT] etc.As poly-fluorenyl material, provided the derivative of poly-fluorenes [PF], for example, poly-(9,9-dialkyl group fluorenes) [PDAF], poly-(9, the 9-dioctyl fluorene) [PDOF] etc.
Note, can be by at anode with have and insert HMW luminous organic material between the HMW luminous organic material of the characteristics of luminescence and strengthen from the hole of anode injection properties with hole transport characteristic.This hole mobile material is dissolved in the water with acceptor material usually, and by this solution of coating such as spin coating methods.Because hole mobile material does not dissolve, therefore form lamination with above-mentioned luminous organic material that the characteristics of luminescence is arranged in organic solvent.Can provide PEDOT and as the mixture of the camphorsulfonic acid (CSA) of acceptor material, polyaniline [PANI] and as the mixture of the polystyrolsulfon acid [PSS] of acceptor material etc. as hole transport HMW luminous organic material.
In addition, can form luminescent layer to send monochrome or white light.Under use emitted white light the situation of material, the filter (nonferrous layer) that provides transmission to have the light of concrete wavelength on the emission side of pixel showed thereby carry out color.
In order to form the luminescent layer that sends white light, for example by the stacked Alq of method of evaporating order 3, partly be doped with the Alq of the pigment Nile red that glows 3, p-EtTAZ and TPD (aromatic diamines).When forming luminescent layer, preferably cure layer after the coating by heating in vacuum by the coating method that uses spin coating.For example, can entirely apply poly-(ethylene dioxythiophene)/poly-(styrene sulfonic acid) (PEDOT/PSS) the aqueous solution and it is cured to form the film as hole injection layer.Then, can whole coating be doped with the luminescence center pigment (as 1,1,4,4-tetraphenyl-1,3-butadiene (TPB), the two cyanogen methylenes of 4--2-methyl-6-(p-dimethyl amido-styryl)-4H-pyrans (DCM1), Nile red or coumarin 6) polyvinylcarbazole (PVK) solution, and it is cured to form the film as luminescent layer.
Luminescent layer can be formed individual layer, for example, can transmission electronic 1,3,4-oxadiazoles derivative (PBD) be dispersed in can the polyvinylcarbazole (PVK) of transporting holes in.The another kind of method that obtains white light emission is that agent disperses and disperses four kinds of pigments (fragrant plain 6, DCMl of TPB, beans and Nile red) with suitable amount as electric transmission for PBD with 30% weight ratio.Except the light-emitting component of describing out at this that white light emission is provided, also can provide the light-emitting component of red emission, green emission or blue emission by the material manufacturing of suitably selecting luminescent layer.
And the ternary excitation material and the singlet excitation light-emitting material that contain metal complex etc. can be used for luminescent layer.For example, in the middle of the pixel of sending red, green and blue light, it is luminous can be made by ternary excitation light-emitting material by half the pixel of sending ruddiness of the reduction in the short relatively time, and remainder is made by the singlet excitation light-emitting material.Ternary excitation light-emitting material has such specific character: this material has good luminous efficient and consumes less energy identical luminous to obtain.When the 3rd excitation light-emitting material is used for red pixel, only need small amount of current is offered light-emitting component.Thus, can improve reliability.The pixel of burn red and the pixel of glow green can be made and the pixel of the coloured light that turns blue can be made by the singlet excitation light-emitting material by ternary excitation light-emitting material, to realize low-power consumption.Low-power consumption can further obtain by the light-emitting component that ternary excitation light-emitting material sends the green glow of high observability by formation.
As the metal complex of dopant is the example of ternary excitation light-emitting material, and the 3rd transitional sequence elements platinum as the metal complex of metal center, to have iridium be known as the metal complex of metal center etc.Ternary excitation light-emitting material is not limited to above-claimed cpd.The element that also can use compound with said structure and belong in the 8th to the 10th family of periodic table any is as metal center.
The above-mentioned material that is used to form luminescent layer is an example.Light-emitting component can form by stacked functional layer suitably, and wherein functional layer for example is that hole injection/transport layer, hole transmission layer, electronics inject transport layer, electron transfer layer, luminescent layer, electronic barrier layer and hole blocking layer.And, can form mixed layer or hybrid junctions by making up these layers.Can change the layer structure of luminescent layer.Replacing concrete electron injection region or luminous zone are provided, is acceptable as electrode being provided or the improvement of the luminescent material of dispersion is provided for this purpose, as long as it does not depart from scope of the present invention.
The light-emitting component that forms with above-mentioned material is by coming luminous in biasing forward.The pixel that is formed with the display device of light-emitting component can drive by simple matrix pattern or active matrix pattern.Under any situation, make pixel luminous by applying forward bias to each pixel in specific time sequence; Yet, be in non-luminance for this pixel of specific period.The reliability of light-emitting component can improve by applying reverse bias at non-fluorescent lifetime.In light-emitting component, there are degradation modes that wherein luminous intensity reduces under specific drive condition or the degradation modes that non-light-emitting area enlarges and brightness obviously reduces in the pixel wherein.Yet the progress of degeneration can drive slowly by alternation and descend.Thus, the reliability of luminescent device improves in department.
Subsequently, form sealant 676 and by using seal substrate 675 to seal.Subsequently, with therebetween anisotropic conductive layer 681 splicing ear (will be connected to the splicing ear 682 of canopy wiring layer and will be connected to the splicing ear of unshowned source wiring layer) is attached to each marginal portion of gate wiring layer 613 and source wiring layer (not shown).And the coupling part of each wiring layer and splicing ear is preferably with sealing resin 683 sealings.This structure can prevent to enter and destroy pixel portion from the moisture of a part.According to above-mentioned steps, can form luminescence display panel.
According to above-mentioned steps, can make luminescence display panel.Note, be generally diode etc. and be used for preventing that the protective circuit of electrostatic damage can be provided between splicing ear and the source wiring (grating routing) or in pixel portion.In this case, by protective circuit is operating as diode with the similar step manufacturing of above-mentioned TFT and gate wiring layer by being connected pixel portion to the leakage or the source wiring layer of diode.
[embodiment 4]
The pattern of the light-emitting component that can be applicable to the foregoing description is described with reference to figure 26A to 26D.
Figure 26 A shows the example of the light-emitting component that its first pixel electrode 11 made by optical transmission oxidation electric conducting material.First electrode 11 is made by the oxidation electric conducting material of the silica from 1 atom % to 15 atom % concentration.EL layer 16 is formed thereon, and it is the lamination of hole injection layer and/or hole transmission layer 41, luminescent layer 42 and electron transfer layer and/or electron injecting layer 43.Second pixel electrode 17 is formed with first electrode layer 33 that contains alkali metal or alkaline-earth metal such as LiF or MgAg and the second electrode lay of being made by metal material such as aluminium 34.That side of first pixel electrode 11 that the pixel of this structure is represented with arrow among the figure freely is luminous.
Figure 26 B shows the example by the luminous light-emitting component of second pixel electrode 17.First pixel electrode 11 is formed with first electrode layer 35 and the second electrode lay 32, wherein first electrode layer is by metal such as aluminium or titanium or contain this metal and have the stoichiometric composition ratio or the metal material of the nitrogen of lower concentration is made, and the second electrode lay is made by the oxidation electric conducting material with the silica from 1 atom % to 15 atom % concentration.EL layer 16 is formed thereon, and it is the lamination of hole injection layer and/or hole transmission layer 41, luminescent layer 42 and electron transfer layer and/or electron injecting layer 43.Second pixel electrode 17 is formed with third electrode layer 33 that contains alkali metal or alkaline-earth metal such as LiF or CaF and the 4th electrode layer of being made by metal material such as aluminium 34.Form each layer to have 100nm or littler thickness, so that this layer energy printing opacity.Therefore, light can pass second pixel electrode 17 and sends.
Figure 26 C shows the example that passes the luminous light-emitting component of first pixel electrode 11 and wherein forms the structure of EL layer by the stacked electron transfer layer of order and/or electron injecting layer 43, luminescent layer 42 and hole injection layer and/or hole transmission layer 41.From EL layer 16 side, second pixel electrode 17 is formed with the second electrode lay 32 made by the oxidation electric conducting material that contains from 1 atom % to the silica of the concentration of 15 atom % and by metal such as aluminium or titanium or contain this metal and have the stoichiometric composition ratio or first electrode layer 35 that the metal material of the nitrogen of lower concentration is made.First pixel electrode 11 is formed with third electrode layer 33 that contains alkali metal or alkaline-earth metal such as LiF or CaF and the 4th electrode layer of being made by metal material such as aluminium 34.Form each layer to have 100nm or littler thickness, so that this layer energy printing opacity.Therefore, light can pass first pixel electrode 11 and sends.
Figure 26 D shows the example that passes the luminous light-emitting component of second pixel electrode 17 and wherein forms the structure of EL layer by the stacked electron transfer layer of order and/or electron injecting layer 43, luminescent layer 42 and hole injection layer and/or hole transmission layer 41.Form first pixel electrode 11 having the structure with the structural similarity shown in Figure 25 A, and thickness reaches the degree that this first pixel electrode can reflect the light that sends from the EL layer.Second pixel electrode 17 is made by the oxidation electric conducting material that contains from 1 atom % to the silica of the concentration of 15 atom %.In this structure, hole injection layer or hole transmission layer 41 are made by inorganic, metal oxide (being generally molybdenum oxide or vanadium oxide).Therefore, provide and to be introduced in the oxygen in formation second pixel electrode 17 and to improve the hole injection properties.Thus, can reduce driving voltage.
[embodiment 5]
The image element circuit and the method for operation thereof of the luminescence display panel of describing as describing in the above-described embodiments with reference to figure 27A to 27F.
In the pixel shown in Figure 27 A, column direction signalization line 710 and power line 711 and 712, and scan line 714 is set at line direction.In addition, pixel comprises switching TFT 701, drive TFT 703, Current Control TFT704, capacity cell 702 and light-emitting component 705.
The difference of pixel shown in Figure 27 C is that the gate electrode of TFT703 is connected to the power line 712 that is provided with at line direction, rather than this pixel has and the similar structure of pixel shown in Figure 27 A.In other words, Figure 27 A is identical with two pixel equivalent circuit figure shown in the 27C.Yet,, all use the conductive layer in different layers to form each power line when when column direction is provided with power line 712 (Figure 27 A) and when when line direction is provided with power line 712 (Figure 27 C).At this, assemble the wiring of the gate electrode that connects drive TFT 703, and each figure is shown respectively in Figure 27 A and 27C, form wiring in the different layers to be presented at.
In the pixel shown in Figure 27 A and Figure 27 C, TFT703 and 704 are connected in series in pixel.The channel length L (704) of the channel length L of TFT703 (703) and channel width W (703) and TFT704 and channel width W (704) preferably are arranged to satisfy L (703)/W (703): L (704)/W (704)=5 to 6000: 1.
Notice that TFT703 operates in the saturation region, and has the effect that control flows is crossed the magnitude of current of light-emitting component 705, TFT704 operates in linear zone, and has control electric current is provided to the effect of light-emitting component 705.See that from the viewpoint of manufacturing step preferably two TFT have same conductivity.In this Implementation Modes, TFT is formed the n channel TFT.And TFT703 can be depletion type TFT and enhancement mode TFT.In the present invention with said structure, TFT704 operates in linear zone, so that can not influence the magnitude of current of light-emitting component 705 in the slight variation of the Vgs of TFT704 (gate source voltage).In other words, determine the magnitude of current of light-emitting component 705 by the TFT703 that in the saturation region, works.According to said structure, the brightness that can improve the light-emitting component that causes by the variation in the TFT characteristic changes, and the display device of the picture quality with raising can be provided.
In the pixel shown in Figure 27 A to 27D, TFT701 is used to control the TFT of incoming video signal to pixel.When the TFT701 conducting, vision signal inputs to pixel.Then, the store voltages of vision signal is in capacity cell 702.Each shows the structure that capacity cell 702 wherein is provided Figure 27 A and 27C; Yet, the invention is not restricted to this.When with gate capacitor etc. as can keep the capacitor of vision signal the time, capacity cell 702 can be provided.
Pixel shown in Figure 27 B has and the identical structure of pixel shown in Figure 27 A, except having increased TFT706 and scan line 715.In an identical manner, have and the identical structure of pixel shown in Figure 27 C in the pixel shown in Figure 27 D, except having increased TFT706 and scan line 715.
In TFT706, control conducting or end by newly-installed scan line 715.When the TFT706 conducting, remain on the charge discharge in the capacity cell 702, and TFT704 ends.In other words, can obtain wherein coming impressed current not flow through the state of light-emitting component 705 by TFT706 is set.Therefore, TFT706 can be called erasing TFT.Therefore, in the structure in Figure 27 B and 27D, can with begin write cycle simultaneously or begin light period thereafter immediately, and waiting signal is not written in all pixels.Therefore, can improve duty ratio.
In the pixel shown in Figure 27 E, at signalization line 710 on the column direction and power line 711 with scan line 714 is set on line direction.In addition, this pixel comprises switching TFT 701, drive TFT 703, capacity cell 702 and light-emitting component 705.Pixel shown in Figure 27 F has and the identical structure of pixel shown in Figure 27 E, except having increased TFT706 and scan line 715.Can improve duty ratio by TFT706 also is set in the structure of Figure 27 F.
Especially as above-mentioned Implementation Modes in formation have the preferred semiconductor film of making under the situation of thin-film transistor of amorphous semiconductor film etc. with big drive TFT.Therefore, consider the aperture ratio, preferably use the pixel of TFT in a small amount that has shown in Figure 27 E or the 27F.
Think that this active matrix light emitting device is favourable for the low-voltage driving when all providing TFT owing to each pixel and strengthened picture element density.On the other hand, formed the passive matrix luminescent device that TFT wherein is provided for every row.In the passive matrix luminescent device, do not provide TFT for each pixel; Therefore, obtain high aperture ratio.
As mentioned above, can adopt various image element circuits.
[embodiment 6]
With reference to figure 9A to 9C, the installation of the drive circuit of describing in the above-described embodiments on display panel (signal-line driving circuit 1402 and scan line drive circuit 1403a and 1403b) is described in the present embodiment.
As shown in Fig. 9 A, signal-line driving circuit 1402 and scan line drive circuit 1403a and 1403b are installed in the outer of pixel portion 1401 place.In Fig. 9 A,, IC chip 1405 is installed on the substrate 1400 as signal-line driving circuit 1402, scan line drive circuit 1403a and 1403b etc. by the COG method.Then, the IC chip is connected to external circuit by FPC (flexible print circuit) 1406.
As shown in Fig. 9 B, forming with SAS or crystal semiconductor under the situation of TFT, can be with the integrated substrate top that is formed on such as pixel portion 1401, scan line drive circuit 1403a and 1403b, and signal-line driving circuit 1402 etc. installed individually as the IC chip.In Fig. 9 B,, will be installed on the substrate 1400 as the IC chip 1405 of signal-line driving circuit 1402 by the COG method.Then, by FPC 1406 the IC chip is connected to external circuit.
And, as shown in Fig. 9 C, can signal-line driving circuit 1402 etc. be installed by TAB method replaced C OG method.Then, by FPC1406 the IC chip is connected to external circuit.In Fig. 9 C, signal-line driving circuit is installed by the TAB method; Yet, can scan line drive circuit be installed by the TAB method.
When the IC chip being installed by the TAB method, provide pixel portion largely about substrate, and the framework that narrows.
The IC chip forms by using silicon wafer, still, can replace providing the IC that is formed on above the glass substrate (below be called drive IC) at the IC chip.Owing to take out this IC chip from circular silicon wafer, therefore the existence in shape at the master slice substrate limits.On the contrary, drive IC has glass master slice substrate and in shape without limits.Thus, boost productivity.Therefore, the geometry of drive IC can freely be provided with.For example,, compare, can reduce the necessary number of drive IC with the situation of installation IC chip when forming drive IC when having the long limit of length from 15mm to 80mm.Therefore, can reduce the number of splicing ear and can improve output in the manufacturing.
Can form drive IC by the crystal semiconductor that use is formed on substrate top, and can shine by continuous wave laser and form crystal semiconductor.The semiconductor film that forms by the continuous wave laser irradiation has less crystal defect, and has the crystal grain of bulky grain diameter.Therefore, the transistor with this semiconductor film has good mobility and response speed and can obtain high-speed driving, and it is suitable for drive IC.
[embodiment 7]
The method that drive circuit (signal-line driving circuit 1402 and scan line drive circuit 1403a and 1403b) is installed on the display panel that is used for describing is in the above-described embodiments described in the present embodiment referring to figures 10A to 10D.Can be with the method for attachment by using anisotropic conductive material, wire bonding method etc. as installation method, and its example is described referring to figures 10A to 10D.Note, use driver IC to describe in the present embodiment as the example of signal-line driving circuit 1402 and scan line drive circuit 1403a and 1403b.Can replace drive IC and suitably use the IC chip.
Figure 10 A shows wherein by using anisotropic conductive material that drive IC 1703 is installed in example on the active matrix substrate 1701.Each wiring is formed on active matrix substrate 1701 tops as the electronic pads 1702a and the 1702b of source wiring or grating routing (not shown) and wiring.
Splicing ear 1704a and 1704b are provided on the surface of drive IC 1703, and protection dielectric film 1705 is formed in its periphery.
Drive IC 1703 is fixed in the active matrix substrate 1701 with anisotropic conductive sticker 1706. Splicing ear 1704a and 1704b and electronic pads 1702a and 1702b are electrically connected mutually by the electrically conductive particles 1707 that is included in the anisotropic conductive sticker.The anisotropic conductive sticker is the adherence resin that wherein disperses and comprise electrically conductive particles (particle diameter from 3 μ m to 7 μ m).Provide the example as the anisotropic conductive sticker such as epoxy resin, phenolic resins.Electrically conductive particles (particle diameter is that several μ m are to a hundreds of μ m) is by element gold, silver, copper, palladium and platinum or comprise that the alloy particle of several elements makes.Alternatively, use has the particulate of said elements sandwich construction.And, can use the resin particle of the alloy of a kind of element that is coated with in gold, silver, copper, palladium and the platinum or multiple element.
As the substituent that is used for the anisotropic conductive sticker, can use and transfer to epilamellar anisotropic conductive film.To be dispersed in the anisotropic conductive film to those the similar electrically conductive particles in the anisotropic conductive sticker.Can suitably adjust the size and the concentration of the electrically conductive particles 1707 that is mixed in the anisotropic conductive sticker 1706, so that in this pattern, drive IC can be installed on the active matrix substrate.This installation method is suitable for the method for the installation IC among Fig. 9 A and the 9B.
Figure 10 B shows the example of the installation method that utilizes the organic resin contraction.By using Ta, Ti etc., resilient coating 1711a and 1711b are formed on the surface of the splicing ear 1704a of drive IC and 1704b, and form the Au that thickness is 20 μ m thereon by electroless plating method etc., to become projection 1712a and 1712b.Drive IC can be installed with the Pressure Welding receiving electrode by the insulating resin 1713 of insertion optical hardening between drive IC and active matrix substrate and by the contraction of using the light curable resin.This installation method is adapted to be mounted within the drive IC among Fig. 9 A and the 9B.
As shown in Figure 10 C, by using sticker 1721 that drive IC 1703 is fixed to active matrix substrate 1701 and will interconnecting at the splicing ear 1704a of the CPU above the wiring substrate and 1704b and electronic pads 1702a and 1702b by wiring 1722a and 1722b.Then, seal by organic resin 1723.This installation method is suitable for the drive IC among installation diagram 9A and the 9B.
As shown in Figure 10 D, drive IC 1703 can be provided in FPC (flexible print circuit) 1731 tops, has the wiring 1732 and the anisotropic conductive sticker 1706 that comprise electrically conductive particles 1708 therebetween.This structure is very effective when electronic device that is used to limit base plate size such as portable terminal.This installation method is suitable for being used for the method for the drive IC of installation diagram 9C.
Notice that the method that is used to install drive IC is not limited to this especially, and can use known COG method, wire bonding method, TAB method or use the reflow treatment of solder protuberance.When carrying out reflow treatment, the substrate that is preferred for drive IC or active matrix substrate is made by high thermal resistance plastics, is generally polyamide substrate, HT substrate (being made by Nippon Steel Chemical company), has the ARTON (being made by JSR company) that is made by norbornene resin of polar group etc.
[embodiment 8]
This embodiment has described by form the drive circuit of SAS semiconductor layer under the situation that forms scan line drive circuit above the substrate 1400 as shown in Fig. 9 B and 9C in the display panel of describing in embodiment 6.
Figure 14 comprises that use has wherein obtained from 1cm 2/ V second is to 15cm 2The block diagram of the scan line side drive circuit of the n channel-type TFT of the SAS of the field-effect mobility of/V second.
By the frame of reference number among Figure 14 1500 expression impulse output circuit corresponding to the sampling pulse that is used to export each stage, and shift register comprises n impulse output circuit.Be connected pixel at buffer circuit 1501 with 1502 end points place.
Figure 15 shows the concrete structure of impulse output circuit 1500, and this circuit comprises n channel-type TFT3601 to 3613.The operating characteristic that can consider the n channel-type TFT that uses SAS is determined the size of TFT.For example, when channel length was arranged to 8 μ m, channel width can be configured to from 10 μ m in the scope of 80 μ m.
Figure 16 shows the concrete structure of buffer circuit 1501.Buffer circuit comprises the n channel-type TFT 3620 to 3605 of same way as.The operating characteristic that can consider the n channel-type TFT that uses SAS is determined the size of TFT.For example, when channel length being arranged to 10 μ m, channel width can be arranged to from 10 μ m in the scope of 1800 μ m.
[embodiment 9]
Display module is described in the present embodiment.At this, with reference to the LCD MODULE of Figure 23 description as an example of display module.
With sealant 1600 active matrix substrate 1601 is interfixed with relative substrate 1602, and pixel portion 1603 and liquid crystal layer 1604 are provided betwixt, to form the viewing area.
Needing chromatograph 1605 shows to carry out color.Under the situation of RGB system, provide nonferrous layer corresponding to every kind of color of red, green and blue corresponding to each pixel.Polarizing plate 1606 and 1607 is provided in the outside of active matrix substrate 1601 and relative substrate 1602.In addition, form diaphragm 1616 on the surface of polarizing plate 1606, it alleviates the influence that comes from the outside.
The splicing ear 1608 that is provided for active matrix substrate 1601 is connected with wiring substrate 1610 by FPC1609.FPC or connecting wiring provide pixel-driving circuit (IC chip, drive IC etc.) 1611, and external circuit 1612 is attached in the wiring substrate 1610 as control circuit or power circuit.
Cold cathode fluorescent tube 1613, reflecting plate 1614 and blooming 1615 are back light units, and are used as light source so that light is projected on the LCD panel.LCD panel, light source, wiring substrate, FPC etc. are kept and protection by baffle plate 1617.
Notice that any in the embodiment pattern 1 to 7 all can be used for present embodiment.In the present embodiment LCD MODULE is described as display module; Yet, the invention is not restricted to this.The present invention can suitably be used for display module such as DMD (Digital Micromirror Device), PDP (plasma display panel), FED (active display), electrophoretic display device, EDD (Electronic Paper) etc.
[embodiment 10]
A kind of display module is described in the present embodiment.At this, the sectional view as the luminous display module of display module example has been shown in Figure 35 A to 35C.
Figure 35 A shows wherein the sectional view of the luminous display module that active matrix substrate 1201 and seal substrate 1202 is interfixed by sealant 1200.Pixel portion 1203 is provided in therebetween to form the viewing area.
1204 be formed between seal substrate 1202 and the pixel portion 1203 at interval.Can be further by preventing entering of moisture or oxygen with the inert gas translucent resin that for example nitrogen is filled at interval or formation has high absorbency material in the interval.In addition, can form the resin of printing opacity and high-hydroscopicity.Even when the light of self-emission device is transmitted into second substrate side, luminous display module also can form and can not reduce the light transmission of light-transmissive resin.
In addition, the pixel portion of module preferably provides polarizing plate or circular polarizing plate (polarizing plate, quarter wave plate and half-wave plate) to strengthen contrast at least.When self sealss substrate 1202 sides identification display, above seal substrate 1202, sequentially provide quarter wave plate and half-wave plate 1205 and polarizing plate 1206.And, anti-reflective film is provided above polarizing plate.
When self sealss substrate 1202 and active matrix substrate 1201 both sides identification display, the surface of preferred active matrix substrate is provided with quarter wave plate and the half-wave plate and the polarizing plate of same way as.
The splicing ear 1208 that is provided for active matrix substrate 1201 is connected with wiring substrate 1210 by FPC1209.FPC or connecting wiring provide drive circuit 1211 (IC chip, drive IC etc.), and external circuit 1212 is incorporated in the wiring substrate 1210 as control circuit or power circuit.
As shown in Figure 35 B, nonferrous layer 1207 is provided between pixel portion 1203 and polarizing plate or pixel portion and the circular polarizing plate.In this case, by providing pixel portion and by separately providing the nonferrous layer that demonstrates RGB to carry out panchromatic demonstration with the light-emitting component that emits white light.In addition, light-emitting component that can be by blue light-emitting is provided to pixel portion and carry out panchromatic demonstration by providing color conversion layer to wait dividually.In addition, each pixel portion all can provide the light-emitting component that sends red, green and blue light, and can use nonferrous layer 1207.This display module has each RGB of high colour purity and can carry out the high-resolution demonstration.
The active matrix substrate of diaphragm 1221 sealings that Figure 35 C shows by using film resin etc. differently is a situation of not using relative substrate with light-emitting component and with Figure 35 A.Provide diaphragm 1221 to cover the pixel electrode in the pixel portion 1203.As diaphragm, can use organic material such as epoxy resin, polyurethane resin or organic siliconresin.In addition, can let out polymeric material and form diaphragm by dripping with the droplet drainage method.In this embodiment, use release epoxy resin and being dried of disperser.And, relative substrate is provided above diaphragm.All the other structures are similar to Figure 35 A's.
Can be by not using the situation lower seal display device of relative substrate, thus be reduced aspect weight, size and the thickness, as mentioned above.
In the module of this embodiment, come installation wiring substrate 1210 by using FPC1209; Yet the present invention is not necessarily limited to this structure.Pixel-driving circuit 1211 and external circuit 1212 can directly be installed on the substrate by using COG (chip on glass) method.
Notice that any in the Implementation Modes 1 to 7 all can be applicable to present embodiment.In the present embodiment luminous display module is described as display module; Yet, the invention is not restricted to this.The present invention can suitably be used for display module such as DMD (Digital Micromirror Device), PDP (plasma display panel), FED (active display), electrophoretic display device, EDD (Electronic Paper) etc.
[embodiment 11]
The drier of the display panel of describing is in the above-described embodiments described in the present embodiment with reference to figure 28A to 28C.
Figure 28 A is the exterior view of display panel, and Figure 28 B is the sectional view that the line A-B in Figure 28 A obtains, and Figure 28 C is the sectional view that the line C-D in Figure 28 A obtains.
As shown in Figure 28 A, active matrix substrate 2800 and 2802 sealings of relative substrate 2801 usefulness sealants.Pixel region is provided between active matrix substrate and the relative substrate.Pixel region provides the pixel 2807 in the zone of the infall of source wiring 2805 and grating routing 2806.Drier 2804 is provided between pixel region and the sealant 2802.In this pixel region, above grating routing or source wiring, provide drier 2814.At this, above grating routing, provide drier 2814, but it can be provided in grating routing and source wiring top.
The preferred use absorbs water H by chemical absorbing 2The material of O such as the oxide of alkaline-earth metal, for example calcium oxide (CaO) or barium monoxide (BaO) are as drier 2804 and 2814.Yet, be not limited thereto, also can use the material such as zeolite or the silica gel that absorb water by Physical Absorption.
Drier can be fixed on the substrate with the granulated dried agent in the saturable property of the high humidity of the being included in resin.As the saturable property of high humidity resin, provide following material: acrylic resin such as ester type acrylate, acrylic acid ether, ester type polyurethane acrylate, ether urethane acrylate, butadiene urethane acrylate, extraordinary urethane acrylate, epoxy acrylate, amino resins acrylate or acrylic resin acrylate.In addition, can use epoxy resin, for example bisphenol-A liquid resin, bisphenol A-type hard resin, the resin that contains brominated epoxy resin, Bisphenol F type resin, bisphenol-A D type resin, phenol resin, cresols type resin, phenolic varnish type resin, circulation group aliphatic resin, epibis type epoxy resin, glycidyl ester resin, epihydric alcohol amine resin, heterocyclic ring epoxy resins or modified epoxy resin.In addition, also can use other material.For example, can use inorganic substances such as siloxanes etc.
And wherein the hardening composition of molecular mixing in organic solvent that can absorb water by chemical absorbing etc. can be used as the water absorbing material.
Note, preferably will than as the material of sealant the more saturable material of high humidity be chosen as saturable resin of high humidity or inorganic substances.
In according to aforesaid luminescent device of the present invention, the water that is blended in the outside in the luminescent device can just be absorbed before water arrives the zone that provides light-emitting component.Therefore, can suppress because the element that provides for pixel that water causes such as the degeneration of light-emitting component.
As shown in Figure 28 B, drier 2804 is provided between the pixel region 2803 in the periphery of sealant 2802 and display panel.In addition, can be by for relatively substrate or active matrix substrate provide depression and come the attenuate display panel for depression provides drier 2804.
As shown in Figure 28 C, forming in pixel 2807 is semiconductor region 2811, grating routing 2806, source wiring 2805 and the pixel electrode 2812 of a part that is used to drive the semiconductor element of display element.In the pixel portion of display panel, for the zone of the relative substrate that overlaps with grating routing 2806 provides drier 2814.Grating routing is two to four times of source wiring width.Therefore,, the aperture ratio can be do not reduced, and the degeneration that enters He cause thus of moisture in display element can be suppressed by above the grating routing 2806 of non-display area, providing drier 2814.In addition, can be by depression being provided to relative substrate and providing drier to come the attenuate display panel to this depression.
[embodiment 12]
According to the present invention, the semiconductor device of circuit be can form, signal-line driving circuit, controller, CPU, transducer, power circuit, transmission and receiving circuit, memory or the amplifier of treatment circuit automatically of treatment circuit automatically are generally with wherein highly integrated semiconductor element with micro-structure.And, can make system on chip, wherein the I/O interface of circuit such as MPU (microcomputer), memory and construction system (functional circuit) is installed on the chip in the monolithic integrated circuit, and its can be able to realize at a high speed, high reliability and low-power consumption.
[embodiment 13]
Can make various electronic devices by the semiconductor device of describing in 9 or 10 in conjunction with the embodiments on a base plate.Provide the example of following electronic device: television set, camera such as video camera or digital camera, protect order escope (display that head is installed), navigation system, audio reproducing device (automobile audio, acoustic component etc.), notebook personal computer, game machine, individual digital auxiliary system (mobile computer, cellular phone, portable game machine, e-book etc.), comprise picture reproducer (be specially, can handle the data in recording medium such as digital video disc (DVD) and have the equipment of the display of image that can video data) of recording medium etc.At this, television set and block diagram thereof illustrate respectively in Figure 12 and Figure 11, and digital camera is shown in Figure 13, as the exemplary of electronic device.
Figure 11 shows the block diagram of the general structure of television set that receives the simulated television broadcasting.In Figure 11, the broadcasting frequency of the television broadcasting that is received by antenna 1101 is input to tuner 1102.Tuner 1102 produces and exports intermediate frequency (IF) signal by mixing from the high-frequency TV signal of antenna 1101 inputs and the local oscillation frequency signal of controlling according to required receive frequency.
Amplify the IF signal of obtaining by tuner 1102 with intermediate frequency amplifier (IF amplifier) 1103 and be amplified to required voltage.Afterwards, the IF signal of amplification detects by image detection circuit 1104 and automatic testing circuit 1105.Be divided into luminance signal and carrier chrominance signal from the picture signal of image detection circuit 1104 outputs by image processing circuit 1106.And, luminance signal and carrier chrominance signal are carried out the predetermined picture signal processing to become picture signal, so that picture signal outputs to the image output 1108 of the display device that is semiconductor device of the present invention, wherein display device is generally liquid crystal display device, luminescent device, DMD (Digital Micromirror Device), PDP (plasma display panel), FED (active display), electrophoretic display device, EDD (Electronic Paper) etc.
In audio frequency treatment circuit 1107, the signal of exporting from automatic testing circuit 1105 is handled as the FM demodulation to become audio signal.Suitably amplify this audio signal then and divide 1109 with the audio output part that outputs to loud speaker etc.
Television set according to the present invention can be used for terrestrial broadcast, cablecast and the BS broadcasting of digital broadcasting such as terrestrial digital broadcasting, cable digital broadcasting and BS digital broadcasting and analog broadcasting such as VHF band, UHF band etc.
Figure 12 is the front view of television set, and this television set comprises base plate 1151, display part 1152, speaker portion 1153, operation part 1154, video inputs 1155 etc.Television set shown in Figure 12 has structure as shown in Figure 11.
Display part 1152 is examples of the image output 1108 among Figure 11 of display image.
Speaker portion 1153 is examples that the audio output part among Figure 11 of output sound is divided.
Operation part 1154 provides mains switch, volume switch, channel button, tuning switch, selection and opens the light etc., with open or close television set respectively by forcing down switch, select image, control sound, selecting tuning device etc.Note, although also can carry out above-mentioned selection by not shown remote control operation unit.
Video input terminal 1155 is input to image the television set from exterior section such as VTR, DVD or game machine.
Under the situation of wall television set, be used to hang the back side that on the wall part is provided at its main body.
By being the display part that the display device of the example of semiconductor device according to the invention is used for television set, can make television set with low cost high throughput.In addition, by semiconductor device according to the invention being used for image method testing circuit, image processing circuit, audio detection circuit and the audio frequency processing circuit of CPU, can make television set with low cost high throughput with the control television set.Therefore, this TV can be applied to especially widely large tracts of land display media such as wall television set, with at the train station, message panel in the airport etc. and the advertising display panel on road.
Figure 13 A and 13B show the example of digital camera.Figure 13 A is the front perspective view of digital camera, and Figure 13 B is its rear perspective view.In Figure 13 A, digital camera provides release-push 1301, main switch 1302, viewfinder 1303, flasher 1304, lens 1305, lens drum 1306 and base plate 1307.
In Figure 13 B, digital camera provides view finder eyepiece 1311, watch-dog 1312 and action button 1313.
When release-push 1301 forces down a half, operate to focus on and adjust mechanical device and exposure adjustment mechanical device.Subsequently, release-push is all put down the release shutter.
Digital camera is by pushing or rotating main switch 1302 and start shooting or shut down.
Lens 1305 tops that viewfinder 1303 is provided with on the front that is digital camera, and be used for checking coverage and focus point by the view finder eyepiece shown in Figure 13 B.
Flasher 1304 is arranged on the top of the front of digital camera main body.Under the situation that the target of giving low-light level is taken pictures, when release-push forces down and discharge shutter, send fill-in light simultaneously.
Lens 1305 are arranged on the front of digital camera.These lens are made by condenser lens, zoom lens etc.The optical pickup system comprises lens and shutter and aperture, and it is not shown in the drawings.Image output system such as CCD (charge coupled device) are provided in the back side of lens.
Lens drum 1306 is used to switch lens position, so that condenser lens, zoom lens etc. is focused on the target.When catching picture, lens drum is outstanding from main body, so that lens 1305 are shifted to target.When carrying digital camera, lens 1305 are kept at body interior to reduce size.Note, although can come amplifying lens with the expansion target by the mobile lens tube in the present embodiment,, the invention is not restricted to this structure.Because the structure in the optical pickup system of base plate 1307 inside, the present invention can be applicable to obtain feature and the digital camera of zoom lens not.
View finder eyepiece 1311 is provided in the top at the back side of digital camera, can use eye test coverage and focus point by it.
Action button 1313 is the buttons that are used for various functions, and is provided on the back side of digital camera.Action button comprises button, menu button, the Show Button, function button, selector button etc. is set.
By being the watch-dog that the display device of the embodiment of semiconductor device according to the present invention is used for digital camera, can make digital camera with low cost high throughput.By will being that the CPU of the example of semiconductor device according to the present invention is used in response to various function buttons, main switch, the input operation of release-push etc. and the CPU that handles, be used to control various circuit as being used for the circuit that automatic focus and automatic focus are adjusted, be used to control the sequential control circuit that lighting drives and CCD drives, be used for from the imaging circuit that produces picture signal by the signal of image device such as CCD opto-electronic conversion, be used for to convert in the picture signal that imaging circuit produces the A/D change-over circuit of digital signal and be used for writing and read out in the CPU of memory interface etc. of the view data of memory, can make digital camera with low cost high throughput.

Claims (31)

1. method of making semiconductor device comprises step:
By using the droplet drainage method electric conducting material of releasing to form first film figure;
Above first film figure, form first light-sensitive material;
Form first mask pattern by the zone of overlapping mutually and by developing with laser beam irradiation first film figure and first light-sensitive material;
By using first mask pattern to form gate electrode with required form as mask etching first film figure;
Above gate electrode, form dielectric film and semiconductor film;
Above semiconductor film, form second light-sensitive material;
By forming second mask pattern with laser beam irradiation second light-sensitive material and by developing;
Has the semiconductor region of wishing pattern by using second mask pattern to form as the mask etching semiconductor film; With
Formation source electrode and drain electrode are to contact with semiconductor region.
2. method of making semiconductor device comprises step:
Form first film figure by the electric conducting material of releasing with the droplet drainage method;
Above first film figure, release or apply first light-sensitive material;
By forming first film figure with the zone of laser beam irradiation first film figure and first light-sensitive material overlapping and by developing;
By using first mask pattern to form gate electrode with desirable shape as mask etching first film figure;
Above gate electrode, form the dielectric film and first semiconductor film;
Above first semiconductor film, form diaphragm;
Above first semiconductor film and diaphragm, form second semiconductor film;
Above second semiconductor film, form second light-sensitive material;
By forming second mask pattern with laser beam irradiation second light-sensitive material with by developing;
Use second mask pattern to form semiconductor region with desirable shape as mask etching first semiconductor film and second semiconductor film; With
Formation source electrode and drain electrode are to contact with semiconductor region.
3. method that is used for producing the semiconductor devices comprises step:
Form first film figure by the electric conducting material of releasing with the droplet drainage method;
Above first film figure, form first light-sensitive material;
By forming first mask pattern with the zone of laser beam irradiation first film figure and first light-sensitive material overlapping and by developing;
By using first mask pattern to form source electrode and drain electrode as mask etching first film figure with desirable shape;
Above source electrode and drain electrode, form semiconductor film;
Above semiconductor film, form second light-sensitive material;
By forming second mask pattern with laser beam irradiation second light-sensitive material with by developing;
By using second mask pattern to form semiconductor region as the mask etching semiconductor film with desirable shape; With
Above semiconductor region, form dielectric film and gate electrode.
4. according to the method for each manufacturing semiconductor device in the claim 1 to 3, wherein first light-sensitive material and second light-sensitive material are the negative light-sensitive resins.
5. according to the method for each manufacturing semiconductor device in the claim 1 to 3, wherein first light-sensitive material and second light-sensitive material are the positive light-sensitive resins.
6. according to each the method for manufacturing semiconductor device in the claim 1 to 3, wherein in first light-sensitive material and second light-sensitive material is the negative light-sensitive resin, and another is the positive light-sensitive resin.
7. method of making television set comprises step:
Form first film figure by the electric conducting material of releasing with the droplet drainage method;
Above first film figure, form the first photosensitive system material;
By forming first mask pattern with the zone of laser beam irradiation first film figure and first light-sensitive material overlapping and by developing;
By using first mask pattern to form gate electrode with desirable shape as mask etching first film figure;
Above gate electrode, form dielectric film and semiconductor film;
Above semiconductor film, form second light-sensitive material;
By forming second mask pattern with laser beam irradiation second light-sensitive material and by developing;
By using second mask pattern to form semiconductor region as the mask etching semiconductor film with desirable shape;
Formation source electrode and drain electrode are to contact with semiconductor region; With
Form pixel electrode to be connected to drain electrode.
8. method of making television set comprises step:
Form first film figure by the electric conducting material of releasing with the droplet drainage method;
Above first film figure, form first light-sensitive material;
Form first mask pattern with the zone of laser beam irradiation first film figure and the first photosensitive pattern overlapping and by developing;
By using first mask pattern to form gate electrode with desirable shape as mask etching first film figure;
Above gate electrode, form the dielectric film and first semiconductor film;
Above first semiconductor film, form diaphragm;
Above first semiconductor film and diaphragm, form second semiconductor film;
Above second semiconductor film, form second light-sensitive material;
By forming second mask pattern with laser beam irradiation second light-sensitive material and by developing;
By using second mask pattern to form semiconductor region with desirable shape as mask etching first semiconductor film and second semiconductor film;
Formation source electrode and drain electrode are to contact with semiconductor region; With
Form pixel electrode to contact with drain electrode.
9. method of making television set comprises step:
Form first film figure by the electric conducting material of releasing with the droplet drainage method;
Above first film figure, form first light-sensitive material;
By forming first mask pattern with the zone of laser beam irradiation first film figure and first light-sensitive material overlapping and by developing;
By using first mask pattern to form source electrode and drain electrode as mask etching first film figure with desirable shape;
Above source electrode and drain electrode, form semiconductor film;
Above semiconductor film, form second light-sensitive material;
By forming second mask pattern with laser beam irradiation second light-sensitive material and by developing;
By using second mask pattern to form semiconductor region as the mask etching semiconductor film with desirable shape;
Above semiconductor region, form dielectric film and gate electrode; With
Form pixel electrode to be connected with drain electrode.
10. according to each the method that is used to make television set in the claim 7 to 9, wherein first light-sensitive material and second light-sensitive material are the negative light-sensitive resins.
11. according to each the method that is used to make television set in the claim 7 to 9, wherein first light-sensitive material and the second photosensitive sharp material are the positive light-sensitive resins.
12. according to each the method that is used to make television set in the claim 7 to 9, wherein in first light-sensitive material and second light-sensitive material is the negative light-sensitive resin, another is the positive light-sensitive resin.
13. according to each the method that is used for producing the semiconductor devices in the claim 7 to 9, wherein laser beam has any wavelength from the ultraviolet light to the infrared light.
14. according to each the method that is used to make television set in the claim 7 to 9, wherein television set is liquid crystal TV set or EL television set.
15. a method that is used for producing the semiconductor devices comprises step:
Form first film figure by the droplet drainage method;
Above first film figure, form light-sensitive material;
By forming mask pattern with the zone of laser beam irradiation first film figure and light-sensitive material overlapping and by developing; With
By using mask pattern to form second film figure as mask etching first film figure with desirable shape.
16. the method that is used for producing the semiconductor devices according to claim 1 also comprises step:
Form the tertiary membrane pattern that is connected to second film figure by the droplet drainage method.
17. according to the method that is used for producing the semiconductor devices of claim 15, wherein light-sensitive material is the negative light-sensitive resin.
18. according to the method that is used for producing the semiconductor devices of claim 15, wherein light-sensitive material is the positive light-sensitive resin.
19. according to the method that is used for producing the semiconductor devices of claim 15, wherein first film figure is a conducting film.
20. according to the method that is used for producing the semiconductor devices of claim 15, wherein second film figure is at least one in gate electrode, source electrode or the drain electrode.
21. according to the method that is used for producing the semiconductor devices of claim 16, wherein the tertiary membrane pattern is wiring.
22. according to the method that is used for producing the semiconductor devices of claim 15, wherein first film figure is a semiconductor film.
23. according to the method that is used for producing the semiconductor devices of claim 15, wherein second film figure has channel formation region, source region or drain region.
24. according to the method that is used for producing the semiconductor devices of claim 15, wherein first film figure is a dielectric film.
25. according to the method that is used for producing the semiconductor devices of claim 15, wherein second film figure is the dielectric film with opening.
26. according to each the method that is used for producing the semiconductor devices in the claim 1,2,3 and 15, wherein laser beam has any wavelength from the ultraviolet light to the infrared light.
27. a semiconductor device comprises:
Wiring by the formation of droplet drainage method; With
Be connected to the electrode of wiring;
Wherein wiring has 5 μ m or littler width.
28. the kind semiconductor device comprises:
Be provided with the thin-film transistor of gate electrode, gate insulating film, semiconductor region, source electrode and drain electrode; With
Be connected to the grating routing of gate electrode,
Wherein gate electrode has 5 μ m or littler width, and grating routing forms by the droplet drainage method.
29. a television set, it comprises display device, and this display device comprises the wiring that forms by the droplet drainage method and be connected to the electrode of wiring that wherein electrode has 5 μ m or littler width.
30. a television set, it comprises:
Comprise have gate electrode, the display device of the thin-film transistor of gate insulating film, semiconductor region, source electrode and drain electrode; With
Be connected to the grating routing of gate electrode,
Wherein gate electrode has 5 μ m or littler width, and grating routing forms by the droplet drainage method.
31. according to each television set in the claim 27 to 30, wherein television set is liquid crystal TV set or EL television set.
CN 200580003172 2004-01-26 2005-01-24 Semiconductor device, TV set, and manufacturing methods thereof Expired - Fee Related CN100499170C (en)

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US9117764B2 (en) 2010-08-27 2015-08-25 Tokyo Electron Limited Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element
US9142679B2 (en) 2011-12-02 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI461519B (en) * 2010-06-28 2014-11-21 Central Glass Co Ltd A water-repellent protective film-forming agent, a liquid for forming a water-repellent protective film, and a method for cleaning the wafer using the liquid
US9117764B2 (en) 2010-08-27 2015-08-25 Tokyo Electron Limited Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element
US9142679B2 (en) 2011-12-02 2015-09-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor

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