CN1934287A - 用于高介电常数含铪介电材料的原子层沉积的装置和方法 - Google Patents

用于高介电常数含铪介电材料的原子层沉积的装置和方法 Download PDF

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CN1934287A
CN1934287A CNA2005800084063A CN200580008406A CN1934287A CN 1934287 A CN1934287 A CN 1934287A CN A2005800084063 A CNA2005800084063 A CN A2005800084063A CN 200580008406 A CN200580008406 A CN 200580008406A CN 1934287 A CN1934287 A CN 1934287A
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施雷亚斯·科尔
普拉文·纳沃卡
拉库·沙瑞盖潘尼
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Abstract

本发明的实施例提供用于在诸如原子层沉积(ALD)的气相沉积工艺期间在衬底上沉积介电材料的方法。在一实施例中，方法包括连续暴露衬底至铪前驱物和氧化气体以在其上含铪材料。在另一实施例中，通过连续暴露衬底至氧化气体和含有铪前驱物和硅前驱物的工艺气体中沉积硅酸铪材料。氧化气体含有通过氢源气体和氧源气体流经水蒸汽发生器所形成的水蒸汽。

Description

用于高介电常数含铪介电材料的原子层沉积的装置和方法
技术领域
本发明的实施方式主要涉及在衬底上沉积材料的方法和装置，尤其涉及，通过气相沉积工艺沉积高介电常数的介电材料的方法和装置。
背景技术
在半导体工艺、平板显示工艺或其它电子器件工艺领域中，气相沉积工艺对在衬底上沉积材料已具有重要的地位。随着电子器件的几何结构不断变小和器件密度的不断增加，图形的尺寸和高宽比变得更加严格，例如，需要考虑0.07μm的图形尺寸和为10甚至更大的高宽比。因此，以形成这些器件的材料的保形沉积变得越来越重要。
虽然传统的化学气相沉积(CVD)已表明可以成功地用在低至0.15μm的几何结构和高宽比的器件中，但更严格的器件几何结构需要另外的沉积技术。一种受到广泛关注的技术是原子层沉积(ALD)。在ALD工艺中，反应气体依次引入含有衬底的工艺腔室。一般地，第一反应物脉冲进入该工艺腔室并被吸收在衬底表面。第二反应物脉冲进入该工艺腔室并和第一反应物反应形成沉积后的材料。通常在输送每种反应气体之间进行清洗步骤。该清洗步骤可以是用载送气体的连续清洗或在该反应气体输送之间的脉冲清洗。
在ALD工艺中通过氧化金属和硅前驱物形成高介电常数的介电材料在本领域中是公知的。臭氧或原子氧是用于ALD工艺的一种普通的氧化剂或者氧化源，在形成介电材料的沉积工艺中，由于臭氧和原子氧的原子团状态，可以方便地维持一个低的工艺温度。虽然低温下产生高反应率的原因可以归结于游离氧化剂(radical oxidizing agent)，在衬底上形成杂质的副反应在整个工艺腔室中是很普遍的。可选地，在ALD工艺中水或氧可以用作氧化源以形成介电材料。但是，由于水或氧的中等的反应率，与使用游离氧源的ALD工艺相比，使用水或氧作为氧化源的ALD工艺通常需要更低的流速、更长的曝光时间以及更高的温度。同样，使用水或者氧的ALD工艺在每次氧化脉冲后需要一个延长的清洗时间，从而增加了制造产率。此外，慢的流速和高温通常增加在衬底表面上的污染物。
蒸汽氧化工艺在传统的CVD工艺中已经用于钝化或者氧化金属或者硅材料。在一例子中，在第二容器内沸腾的水产生的水蒸汽管道连接进入工艺腔室。在另一例子中，氢气和氧气引入到预先加热到高温(如大于1000℃)的工艺腔室中。在这两个例子中，产生的水蒸汽与金属表面或者硅表面发生反应从而形成介电材料，如金属氧化物或者硅氧化物。虽然上述的蒸汽氧化工艺可以产生在CVD工艺中可以使用的有效的水蒸汽，但是产生的水蒸汽无法用于ALD工艺。由蒸汽氧化工艺衍生的水蒸汽可能会在衬底表面形成杂质，并需要对工艺温度或者氧化水蒸汽的成分进行适度的控制。同样，ALD工艺需要直接地接触定量引入到工艺腔室的固定成分的反应物。
所以，需要一种设备和一种工艺以沉积介电材料，该介电材料在低温情况下产生氧化气体，控制氧化气体和沉积的介电材料的成分，缩短工艺时间并使杂质最少。
发明内容
在一实施方式中，提供了一种用于在设置在工艺腔室内的衬底上形成含铪材料的方法，该方法包括：暴露衬底至铪前驱物以在其上形成含铪层；清洗工艺腔室；暴露所述含铪层至氧化气体以在其上形成铪氧化物材料；以及再次清洗工艺腔室。在一实施例中，通过将衬底暴露至硅前驱物在铪氧化物材料上沉积硅氧化物材料以在其上形成含硅层，清洗工艺腔室，将衬底暴露至氧化气体以在其上形成上硅氧化物材料以及再次清洗工艺腔室。该方法还包括所述氧化气体含有通过氢源气体和氧源气体流经水蒸汽发生器所形成的水蒸汽。所述水蒸汽发生器具有催化剂，该催化剂可以含有钯、铂、镍、铁、铬、钌、铑、它们的组合或者它们的合金。氢源气体和/或氧源气体可以用附加的气体冲稀。例如，含有在氮气中约5vol％氢的合成气体可以用作氢源气体。在一些实施例中，向水蒸汽发生器中提供过量的氧源气体以提供具有富含氧的水蒸汽的氧化气体。在其它实施例中，衬底在预浸工艺中暴露至氧化气体随后沉积含材料或者其它介电材料。
在另一实施方式中，一种用于在原子层沉积工艺期间在衬底上沉积含铪材料的方法，该方法包括：将衬底设置在工艺腔室内；向水蒸汽发生器中流入氢源气体和氧源气体以产生含有水蒸汽的氧化气体；以及将衬底连续暴露至氧化气体和含有铪前驱物的工艺气体以在衬底上形成含铪材料。在一些实施例中，工艺气体含有次前驱物，诸如硅前驱物或者铝前驱物。通过在工艺腔室内组合含有铪前驱物的气体和含有次前驱物的至少另一气体形成工艺气体，诸如通过提供含有前驱物的各气体的脉冲形成工艺气体。另外，通过蒸发含有至少铪前驱物和次前驱物的反应物混合物形成工艺气体。沉积后的含铪材料可以含有铪氧化物、硅酸铪、铪硅氮氧化物、铪氮氧化物、铝酸铪、其衍生物以及它们的组合。
在另一实施方式中，提供了一种用于在原子沉积工艺期间在衬底上形成介电材料，该方法包括：将衬底设置在工艺腔室内；以及将衬底连续暴露至氧化气体和至少一前驱物，诸如铪前驱物、锆前驱物、硅前驱物、铝前驱物、钽前驱物、钛前驱物、镧前驱物以及它们的组合。通过向水蒸汽发生器流入氢源气体和氧源气体形成水蒸汽。在沉积工序中形成的介电材料的实施例包括：铪氧化物、硅酸铪、锆氧化物、硅酸锆、镧氧化物、硅酸镧、钽氧化物、硅酸钽、钛氧化物、硅酸钛、铝氧化物、硅酸铝、硅氧化物、其衍生物以及它们的组合。在一形成硅酸铪材料的实施例中，衬底连续暴露至氧化气体和含有铪前驱物和硅前驱物的工艺气体。在另一实施例中，衬底连续暴露至铪前驱物、氧化气体、硅前驱物和再次至氧化气体中。
在另一实施方式中，提供了一种用于在工艺腔室内在衬底上形成含铪介电层叠的方法，该方法包括形成至少一铪氧化物层和至少一硅酸铪层。该方法包括将衬底连续暴露至氧化气体和含有铪前驱物的第一工艺气体以在衬底上形成第一含铪材料；以及将衬底连续暴露至氧化气体和含有铪前驱物的第二工艺气体以在所述第一含铪材料上形成第二含铪材料。在一实施例中，第一工艺气体还含有硅前驱物。该方法还包括通过向水蒸汽发生器流入氢源气体和氧源气体形成水蒸汽。
附图说明
因此为了更详细地理解本发明的以上所述特征，将参照附图中示出的实施例对以上简要描述的本发明进行更具体的描述。然而，应该注意，附图中只示出了本发明典型的实施例，因此不能认为是对本发明范围的限定，本发明可以允许其他等效的实施例。
图1示出了本文所述的一实施例中通过ALD工艺沉积含铪材料的一种工艺序列；
图2A示出了根据本文所述的一实施例配置的工艺系统的示意图；
图2B示出了本文所述的一实施例中的水蒸汽发生器系统的示意图；
图3示出了本文所述的另一实施例通过ALD工艺沉积含铪材料的工艺序列；
图4示出了本文所述的另一实施例通过ALD工艺沉积含铪材料的工艺序列；
图5A至5E示出了本文所述的实施例中的ALD工艺中铪前驱物和硅前驱物的一些脉冲次序；
图6示出了本文所述的一实施例中可以用于沉积工艺的工艺腔室的示意性截面图；
图7示出了本文所述的一实施例中可用于沉积工艺的另一工艺腔室的示意性截面图；
图8示出了本文所述的一实施例中可用于沉积工艺的另一工艺腔室的示意性截面图；
图9A和9B示出了本文所述的实施例中可以和工艺腔室配合使用的隔热衬垫的示意图；以及
图10示出了本文所述的一实施例中可以用于沉积工艺的工艺腔室盖组件的示意图。
具体实施方式
本发明提供用于在衬底表面通过原子层沉积工艺(ALD)沉积含铪材料和其他的高介电常数的介电材料的方法。一方面，通过顺序脉冲引入铪前驱物和氧化气体到ALD工艺腔室中实施ALD工艺从而形成含铪材料。该氧化气体包含与ALD工艺腔结合(coupled)的水蒸汽发生器(WVG)系统产生的水蒸汽。WVG系统通过把氢源气体和氧源气体暴露至催化剂在低温下(如低于500℃)产生氧化气体。可以精确地控制氧化气体的成分以提供富含各种比例的氧气和氢气的水蒸汽。利用WVG系统产生水蒸汽的ALD工艺具有对沉积的介电材料的成分的元素控制(elemental control)，使沉积在衬底上的杂质最少以及可以提高制造产率的快速工艺时间。
工艺
图1示出了根据本发明一实施方式用于形成诸如铪氧化物的含铪材料的示例性工艺序列100。把衬底装入一可以进行循环沉积且工艺条件可调的工艺腔室(步骤110)。工艺条件可以包括衬底温度或者工艺腔室温度、腔压、以及气体流速。衬底可以暴露于任意的预浸工艺，并在ALD循环开始前进行清洗(步骤115)。衬底暴露于独自或者与一载送气体一起引入到工艺腔室的铪前驱物脉冲从约0.1秒至约5秒范围的时间周期(步骤120)。随后引入清洗气体脉冲至工艺腔室(步骤130)以清洗或者以其它方式去除任何残留的铪前驱物或者副产品。下一步，氧化气体脉冲引入到工艺腔室(步骤140)，氧化气体可以包括几种氧化剂的混合物，如水蒸汽和氧。再次引入清洗气体脉冲到工艺腔室(步骤150)以清洗或者以其它方式去除任何残留的氧化气体或者副产品。适合的载送气体或者清洗气体可以包括氦、氩、氮、氢、混合气体、氧或者它们的组合。
这里使用的“脉冲”是指一定量的特定化合物被间歇地或非连续地引入到反应区或者工艺腔室。每个脉冲所含的特定化合物的量可以根据脉冲持续的时间随时间而变化，根据一些参数如所用工艺腔室的容量、结合至工艺腔室的真空系统以及特定化合物的挥发率/反应率，每个脉冲的持续时间是可变的。这里所用的“半反应”是指其后跟有去除步骤的暴露步骤，该暴露步骤提供把反应物引入到工艺腔室并在其中的衬底上吸附或者与反应物发生化学反应，诸如含有反应物的工艺气体脉冲。清洗步骤提供通过引入气体(如清洗气体或者载送气体)到腔室内清除腔室内过量的反应物或者反应副产品、用真空系统抽真空或它们的结合。
参考步骤160，在每个沉积循环(步骤120至步骤150)之后，诸如铪氧化物的含哈材料层沉积在衬底上。通常，每个沉积循环形成厚度范围在约1到约10之间的沉积层。根据特殊的设备要求，可能需要随后的沉积循环以沉积具有特定厚度的含铪材料。同样的，沉积循环(步骤120至步骤150)可以重复进行以沉积预定厚度的含铪材料。因此，工艺序列100在达到步骤170时结束。通过沉积工艺形成的铪氧化物材料具有实验化学式HfOx。铪氧化物可以具有分子化学式HfO2，但是通过改变工艺条件(如时序、温度或者前驱物)，铪氧化物可被较低程度的氧化，如HfO1.8。优选地，铪氧化物通过此处的工艺沉积为分子化学式为HfO2或者氧：铪浓度比小于2。
如在步骤115所述，衬底可以暴露于预处理工艺或预浸工艺以用各种功能基团限衬底表面，如此所述，在开始沉积工艺之前有用的功能基团包括羟基(OH)；烷氧基(OR，其中R＝Me、Et、Pr或者Bu)、卤氧基(OX，其中X＝F、Cl、Br或者I)、卤化物(F、Cl、Br或者I)、氧基；以及氨基(NR或者NR2，其中R＝H、Me、Et、Pr或者Bu)。预处理工艺可以把衬底暴露于反应物，如NH3、B2H6、SiH4、SiH6、H2O、HF、HCl、O2、O3、H2O2、H2、原子H、原子N、原子O、乙醇、胺、它们的衍生物或者组合。该功能基团可以为引入的化学前驱物提供基座以附着在衬底的表面。该预处理工艺可以把衬底表面暴露于反应物中从约1秒至约2分钟，优选地为从约5秒至约60秒。
在一实施方式中，预浸工艺可以包括任意地把衬底暴露于含有由WVG系统产生的水蒸汽的氧化气体。该预浸工艺给衬底表面提供氢氧基限定的功能基团，该功能基团在随后的暴露中与含氨基型配位体的前驱物(如TDEAH、TDMAH、TDMAS或Tris-DMAS)发生反应。在预浸工艺中，衬底表面可以暴露于含水蒸汽的氧化气体中从约3秒至约90秒的时间范围，优选地为约5秒至约60秒，更优选地为约10秒至30秒。在浸工艺之后，工艺腔室通常用载送气体或清洗气体清洗以去除过量的氧化气体和其中的任何挥发性副产品。在形成含哈材料的实施例中，衬底表面可以暴露于含由WVG系统产生的水蒸汽的氧化气体中约9秒。随后，清洗工艺腔室约6秒，并且通过提供含TDEAH或TDMAH的工艺气体脉冲以开始ALD工艺循环。在其他的实施例中，诸如形成含硅材料，衬底表面可以暴露于含有由WVG系统产生的水蒸汽的氧化气体约15秒。随后，清洗工艺腔室约10秒，并且通过提供含TDMAS或Tris-DMAS的工艺气体脉冲开始ALD工艺循环。
ALD工艺通常在压力范围在从约1Torr至约100Torr的工艺腔室中实施，优选的压力范围从约1Torr至约20Torr，更优选地为从约1Torr至约10Torr，衬底的温度通常维持在从约70℃至约1000℃，优选地从约100℃至约650℃，更优选地从约250℃至约500℃。
在步骤120中，铪前驱物以从约5标准立方厘米每分钟(sccm)至约200sccm的速度引入到工艺腔室中。铪前驱物通常与载送气体如氮气一起以总流速从约50sccm至约1000sccm引入。根据特定的工艺条件、铪前驱物或沉积的含铪材料所要求的成分，铪前驱物可以以从约0.1秒至约10秒的速度脉冲进入工艺腔室。在一实施方式中，铪前驱物以从约1秒至约5秒，如约3秒的速度脉冲进入工艺腔室。在另一实施方式中，铪前驱物以从约0.1秒至约1秒，如约0.5秒，的速度脉冲进入工艺腔室。在一实施例中，铪前驱物优选地为：铪四氯化物(HfCl4)。在另一实施例中，铪前驱物优选地为四(二烷基氨基)铪化合物，诸如四(二乙基氨基)铪((Et2N)4Hf或TDEAH)。
如图2A所示，铪前驱物通常通过由安瓿282引入含有铪前驱物的载送气体分配到工艺腔室280内。安瓿282可以包括封闭导管(ampoule)、鼓泡、滤筒或者其他的用于容纳或者分配化学前驱物的容器。适用的安瓿可由位于美国康涅狄格Danbury的Advanced Technology Materials，Inc提供，如PROE-VAPTM。安瓿282与工艺腔室280通过管道283管道283流体连通，管道283可以是管状物(tube)、导管(pipe)、管线(line)、软管(hose)或者其他的本领域所公知的管。同样，安瓿282与工艺腔室280的距离为距离284，距离284通常小于2米左右，优选地小于1.25米，更优选地为0.7米左右或者更短，可以使距离284最小以维持均匀的铪前驱物流。同样，管道283管道283可以是直的或者具有弯曲部分的，适用的管道283管道283优选为直的或者具有尽可能少的弯曲部分。管道283管道283可以缠绕有加热带以维持预定的温度。安瓿282的温度根据铪前驱物维持在如约20℃至约300℃的范围内。在一实施例中，含HfCl4的安瓿282温度在从约150℃至约200℃之间。
在一实施方式中，安瓿282可以是包含喷射阀门系统281的流体输送系统的一部分，喷射阀门系统281通过管283与安瓿282和工艺腔室280相连接，载送气体源通常连接到喷射阀门系统281(未示出)，含液体前驱物(如TDEAH、TDMAH、TDMAS或Tris-DMAS)安瓿282可以加压以输送液体前驱物到喷射阀门系统281。通常，含液体前驱物的安瓿282加压到从约138kPa(约20psi)至约414kPa(约60psi)之间并可以加热到约100℃或更低的温度，优选的为从约20℃至约60℃之间。喷射阀门系统281将液体前驱物与载送气体结合以形成前驱物蒸汽，该前驱物蒸汽注射到工艺腔室280中。载送气体可以包括氮、氩、氦、氢或它们的组合，并且载送气体可以预加热到温度从约85℃至约160℃之间，适用的喷射阀门可以由位于日本京都的Horiba-Stec所提供的。
在步骤140中，氧化气体以从约0.05sccm至约1000sccm之间的流速引入到工艺腔室280中，优选的为从约0.5sccm至约100sccm。氧化气体以从约0.05秒至约10秒的速度脉冲引入到工艺腔室280中，优选的速度范围为从约0.08秒至约3秒，更适当的速度范围为从约0.1秒至约2秒。在一实施方式中，氧化气体以从约1秒至约5秒如约1.7秒的速度脉冲引入。在另一实施方式中，氧化气体以从约0.1秒至约3秒如0.5秒的速度脉冲引入。
氧化气体可以由通过管道287与工艺腔室280流体连通的水蒸汽发生器(WVG)系统286产生。装置212和214可以用于将管道287连接至WVG系统或者工艺腔室280。适用的装置包括由Fujikin of America，Inc.提供的UPG装置。通常，管道287通过ALD阀门组件与工艺腔室280流体连通。管道可以是由金属(如不锈钢或者铝)、橡胶或塑料(如PTFE)制成的管状物(tube)、导管(pipe)、管线(line)、软管(hose)。在一实施例中，由不锈钢316L制成的管道用作管道287。WVG系统286通过氧源气体(如O2)和氢源气体(H2)在低温(如低于500℃)下的催化反应产生超高纯度的水蒸汽。氢源气体和氧源气体各自以从约5sccm至约200sccm的速度流入WVG系统286，优选的流速为从约10sccm至约100sccm之间。通常，氧源气体和氢源气体的流速可以单独调整以在流出的氧化气体中含有氧气或氧源气体，而不含有氢气或氢源气体。
用于产生含水蒸汽的氧化气体的氧源气体可以包括氧气(O2)、原子氧(O)、臭氧(O3)、一氧化二氮(N2O)、一氧化氮(NO)、二氧化氮(NO2)、五氧化二氮(N2O5)、过氧化氢(H2O2)以及它们的衍生物或者它们的组合。用于产生含水蒸汽的氧化气体的氢源气体可能包括氢气(H2)、原子氢(H)、混合气体(N2/H2)、氨(NH3)、烃(如CH4)、乙醇(CH3OH)以及它们的衍生物或者它们的组合。载送气体可以与氧源气体或者氢源气体并流，并且载送气体可以包含N2、He、Ar或者它们的组合。优选地，氧源气体为氧气或者氮的氧化物，氢源气体为氢气或者以混合气体，如含5vol％氢的氮气。
氢源气体和氧源气体可以用载送气体稀释，以在沉积工艺中对氧化气体中水蒸汽的含量进行灵敏的控制。在一实施方式中，需要较低的水蒸汽流速(约＜10sccm水蒸汽)以在ALD工艺期间完成化学反应以形成含铪材料或其他介电材料。较低的水蒸汽流速降低氧化气体中水蒸汽的浓度。稀释后的水蒸汽的浓度为可以氧化衬底表面上吸附的前驱物。因此，较低的水蒸汽流速使水蒸汽暴露后的清洗时间最小以提高制造产率。同样，该较低的水蒸汽流速通过避免不需要的共同反应减少颗粒污染物的形成。质量流控制器(MFC)可以用于控制氢源气体具有为约0.5sccm的流速同时产生流速约为0.5sccm的水蒸汽流。然而，绝大部分MFC系统在这样低的流速下无法提供均匀的流速。所以，稀释后的氢源气体(如混合气体)可以用于WVG系统，以实现较低的水蒸汽流速。在一实施例中，流速为约10sccm并且含5％氢的混合气体的氢源气体提供来自WVG系统的流速为约0.5sccm的水蒸汽。在另一实施方式中，需要较高的水蒸汽流速(约＞10sccm的水蒸汽)以在ALD工艺期间完成化学反应同时形成含铪材料或者其它介电材料。，如约100sccm的氢气输送约100sccm的水蒸汽。
混合气体可以选择具有氢浓度为在诸如氩或氮的载送气体中体积占约1％至约95％之间。一方面，混合气体的氢浓度从载送气体体积的约1％左右至约30％之间，优选的从约2％至约20％，更优选地，从约3％至约10％，例如，混合气体可以含约5％的氢和约95％的氮。另一方面，混合气体的氢浓度占载送气体体积的从约30％至约95％，优选地为从约40％至约90％，更优选地为从约50％至约85％，例如，混合气体可以含有约80％的氢和约20％的氮。
在一实施例中，WVG系统接受一含有5％氢(95％氮)流速为约10sccm的氢源气体和一流速为约10sccm的氧源气体(例如O2)以形成含有流速为约0.5sccm水蒸汽和流速为约9.8sccm的氧的氧化气体。在另一实施例中，WVG系统接受流速为约20sccm含5％氢混合气体的氢源气体和流速为约10sccm的氧源气体以形成含有流速为约1sccm的水蒸汽和流带为约9sccm的氧的的氧化气体。在另一实施例中，WVG系统接受流速为约20sccm含氢气的氢源气体和流速为约10sccm的氧源气体以形成含有流速为约10sccm的水蒸汽和流速为约9.8sccm的氧的氧化气体。在其他的实施例中，在ALD工艺中氮的氧化物作为氧源气体和氢源气体一起使用以形成水蒸汽。通常，2摩尔当量的氮的氧化物可以代替1摩尔当量的氧气。
WVG系统含催化剂，诸如衬有催化剂的反应器}或者一催化剂过滤器，其中含水蒸汽的氧化气体由氢源气体和氧源气体通过催化化学反应产生。WVG系统不同于通过燃烧反应(通常温度高于1000℃)反应产生水蒸汽高温发生器的高温发生器。含有催化剂的WVG系统通常在范围从约100℃至约500℃的低温下产生水蒸汽，优选的在350℃左右或更低。催化反应器内含的催化器可以包括金属或者合金，如钯、铂、镍、铁、铬、钌、铑，以及它们的合金或它们的组合。在本发明中的ALD工艺中，超高纯度的水蒸汽是理想的。在一实施例中，为了避免未反应的氢向下流动，允许氧源气体流过WVG系统约5秒。下一步，允许氢源气体进入反应器内5秒左右。氧源气体和氢源气体(如H2和O2)的催化反应产生水蒸汽。通过调节氧源气体和氢源气体的流速可以精确地控制产生的含水蒸汽的氧化气体中氧气和氢气的浓度。水蒸汽可以包含残余的氧源气体、氢源气体或者它们的混合。适当的WVG系统可以是由位于加利福尼亚Santa Clara的Fujikin of America，Inc.提供的水蒸汽发生器(WVG)系统，也可以是由位于加利福尼亚Menlo Park的Ultra Clean Technology公司提供的催化剂流发生系统(CSGS)。
图2B是除了WVG系统286的一个结构。氢源气体262、氧源气体264和载送气体源266通过管系统261连接到WVG系统286。管系统261包含管和阀门，管和阀门允许来自氢源气体262、氧源气体264和/或载送气体源266的气体单独与催化剂发生器270通过进气口267和气体过滤器268流体连通。水蒸汽在催化剂发生器270中形成并从中发出。同样，管系统261含管和阀门，管和阀门允许来自氢源气体262和氧源气体264的气体在结合处271分别绕过催化剂反应器270。所以附加的氢源气体和/或氧源气体可以绕过催化剂反应器270并与水蒸汽结合以形成富含氧或氢的氧化气体。气敏元件272和气体过滤器274连接到在催化剂反应器270的下游的管系统261。气敏元件272可以用于确定氧化气体的成分，包括氧气的浓度、氢气的浓度以及水的浓度。氧化气体可以在退出WVG系统286之前流过气体过滤器274。
在步骤130和步骤150，优选的为氩或者氮的清洗气体脉冲以约2slm(标准升每分钟standard liters per minute)至约22slm的流速引入，优选的流速为约10slm。每个工艺循环(步骤120至步骤150)持续时间从约0.01秒至约20秒。在一实施例中，该工艺循环持续约10秒。在另一实施例中，该工艺循环持续约2秒。持续约10秒的较长工艺步骤可以沉积出极好的含铪薄膜，但是并降低产率。通过实验可以获得工艺循环的特定清洗气体流速和持续时间。在一实施例中，与直径200mm的晶片相比，直径300mm的晶片在相同持续时间的情况下需要约两倍的流速，以维持相似的产率。
在一实施方式中，氢气用作载送气体、清洗气体和/或反应气体以降低沉积材料中的卤素杂质。包含卤素原子(如HfCl4、SiCl4和Si2Cl6)的前驱物易于污染沉积后的介电材料。氢是还原剂并会产生挥发的并可去除的副产品卤化氢(如HCl)，所以，氢当与前驱化合物(如铪前驱物、硅前驱物、氧前驱物)结合后，氢可以用作载送气体或者反应气体，并可以包含另外的载送气体(如Ar或者N2)。在一实施例中，温度在从约100℃至约500℃的水/氢混合物用于降低卤素浓度并增加沉积材料的氧浓度。在一实施例中，水/氢混合物可以通过将过量的氢源气体输送到WVG系统中以形成富含氢气的水蒸汽。
在另外一实施方式中，图3示出了一示例性工艺序列200，该工艺序列用于形成含铪材料，如硅酸铪。将衬底装入能够进行循环沉积并且工艺条件可调的工艺腔室中(步骤205)。衬底在开始ALD循环前可以暴露于任意的预浸工艺并进行清洗(步骤207)。衬底暴露于引入工艺腔室从约0.1秒至约5秒的铪前驱物脉冲中(步骤210)。清洗气体脉冲引入工艺腔室(步骤215)以清除或者以其它方式去除任何残留的铪前驱物或副产品。下一步，氧化气体脉冲引入到工艺腔室从约0.1秒至约10秒(步骤220)。氧化气体可以包含几种氧化剂，如从WVG系统产生的水蒸汽和氧。清洗气体脉冲再次引入到工艺腔室(步骤225)，以清洗或以其它方式去除任何残余的氧化化合物或副产品。随后，衬底暴露于引入工艺腔室内约0.1秒至约10秒的硅前驱物脉冲中(步骤230)。清洗气体脉冲再次脉冲进入到工艺腔室(步骤235)以清洗或以其它方式去除任何残留的硅前驱物或副产品。下一步，另外一氧化气体脉冲引入工艺腔室从约0.1秒至约10秒(步骤240)。清洗气体脉冲再次引入到工艺腔室(步骤245)以清洗或者以其它方式去除任何残留的氧化化合物或者副产品。适当的载送气体或者清洗气体可以包括氦、氩、氮、氢、合成气体、氧气或者它们的组合。
参考步骤250，在各沉积循环(步骤210至步骤245)后，具有第一厚度的含铪材料如硅酸铪沉积到衬底表面。通常，各沉积循环形成厚度从约0.5至约10的沉积层。根据特定的设备要求，沉积预定厚度的含铪材料需要后续的沉积循环。沉积循环(步骤210至步骤245)可以重复进行直到在步骤250实现需要的或者预定的厚度，随后，工艺序列200结束于步骤260。
通过此处所述的沉积工艺形成的硅酸铪材料具有实验化学式HfSiyOx，硅酸铪可以是铪氧化物(HfOx或HfO2)和硅氧化物(SiOx或SiO2)的同源混合物或单相HfSiO4材料。硅酸铪可以具有分子化学式HfSiO4，但是通过改变工艺条件(如时序、温度、前驱物)，通过元素浓度可以改变硅酸铪，如HfSiO3.8或HfSi0.8O3.8。
图3所示的ALD通常发生在压力从约1Torr至约100Torr的工艺腔室中，优选的压力从约1Torr至约20Torr，并且更优选的压力从1Torr至约10Torr。衬底的温度通常介于从约70℃至约1000℃，优选的温度从约100℃至约650℃，更优选的温度从约250℃至约500℃。随后任选步骤207中的预浸工艺开始ALD循环并可以包括将衬底暴露于含有从WVG系统产生的水蒸汽的氧化气体，如步骤115所述。
在步骤210中，铪前驱物以从约5sccm至约200sccm的流速引入到工艺腔室中。铪前驱物通常与载送气体如氮气一起以总流速从约50sccm至约1000sccm引入。铪前驱物脉冲引入到工艺腔室从约0.1秒至约10秒。在一实施方式中，铪前驱物脉冲进入从约1秒至约5秒，例如，约3秒。在另一实施方式中，铪前驱物脉冲进入从约0.1秒至约1秒如0.5秒。在一些实施例中，铪前驱物优选地是铪四氯化物，但是其他的实施例中，铪前驱物优选地是TDEAH或者其它的四(二烷基氨基)铪化合物。
在一实施方式中，铪前驱物通常通过由含铪前驱物的安瓿282引入载送气体分配到工艺腔室280中，如图2A所示。安瓿282根据内部的铪前驱物维持一定的温度，如从约20℃至约300℃。在一实施例中，含HfCl4的安瓿282的温度从约150℃至约200℃；在另一实施例中，含液体前驱物(如TDEAH、TDMAH、TDMAS或Tris-DMAS)的安瓿282可以加压以把液体前驱物输送到喷射阀系统281。通常，含液体前驱物的安瓿282加压到压力从约138kPa左右(约20psi)至约414kPa(约60psi)并可以加热到100℃或者更低，优选的温度从约20℃至约60℃。喷射阀系统281将液体前驱物与载送气体组合以形成引入到工艺腔室280中的前驱物蒸气。载送气体可以包括氮、氩、氦、氢或者它们的组合，载送气体可以预热到从约85℃至约150℃。
在步骤220和步骤240中，含水蒸汽的氧化气体以从约20sccm至约1000sccm的速度引入到工艺腔室280中，优选的速度从约50sccm至约200sccm。根据特定的工艺条件和沉积的含铪材料的成分要求，氧化气体以从约0.1秒至约10秒的速度脉冲进入到工艺腔室280内。在一实施方式中，氧化气体的脉冲速度从约1秒至约3秒，如约1.7秒；在另一实施方式中，氧化气体的脉冲速度从约0.1秒至约1秒，如约0.5秒。
氧化气体可以由WVG系统286产生，该WVG系统通过管道287与工艺腔室280流体连通。氢源气体(H2)和氧源气体(O2)各以从约20sccm至约300sccm的速度独立流入WVG系统286。通常，氧源气体的流速高于氢源气体的流速。在一实施例中，氢源气体的流速约为100sccm，而氧源气体的流速约为120sccm从而使水蒸汽富含氧气。
在另一WVG系统的实施方式中，氢气的流速高于氧气的流速，如，氢源气体的流速约为250sccm，氧源气体的流速约为100sccm。所以，从WVG系统中流出的水蒸汽富含氢。例如，当氢源气体的流速为约250sccm而氧源气体的流速为约100sccm时，流出的氧化气体含部分流速为约100sccm的水蒸汽和流速为约50sccm的氢气。富含氢的水蒸汽具有几个重要的功能。首先，水蒸汽中过量的氢增加了某些杂质如卤素的清除率。在含HfCl4或其它卤化的前驱物的沉积工艺中，过量的氢与氯反映以形成氢的氯化物，该氢的氯化物易挥发并通过清洗步骤易于去除。其次，水蒸汽中过量的氢防止某些金属栅层氧化。在MIM电容器或器件中，层叠可以含有夹在两金属层如铝或钨之间的介电层，当形成如硅酸盐化合物的该介电层时，当水蒸汽氧化介电层时，过量的氢可以还原金属层。
在步骤230中，硅前驱物以从约5sccm至约200sccm或者从约1mg/min至约50mg/min的流速引入到工艺腔室，优选的流速从约5mg/min至约25mg/min。硅前驱物通常与载送气体如氮气以从约50sccm至约1000sccm的总流速一起引入。根据特定的工艺和所需的硅浓度，硅前驱物脉冲进入工艺腔室从约0.1秒至约10秒之间。在一实施方式中，硅前驱物的脉冲进入从约1秒至约5秒，如约3秒。在另一实施方式中，硅前驱物的脉冲进入从约0.1秒至约1秒，如约0.5秒。在一些实施例中，优选的硅前驱物为三(二甲基氨基)硅烷((Me2N)3SiH或Tris-DMAS)、四(二甲基氨基)硅烷((Me2N)4SiH或TDMAS)或者其他的二烷基氨基硅烷，而在其他的例子中，硅前驱物优选地为硅烷(SiH4)。
清洗气体的脉冲，如氩或氮，在步骤215、225、235和245中通常以从约2slm至约22slm的流速引入，优选的流速为约10slm。每个工艺循环(步骤210至步骤245)发生的时间为从约2秒至约40秒。在一实施例中，工艺循环的持续时间约为20秒，而在另一实施例中，工艺循环的持续时间约为4秒。持续时间约20的更长工艺步骤沉积极好的含铪薄膜，但是同时降低了产率。
在另一实施方式中，可以通过省略任意一引入氧化气体以及随后的清洗步骤来形成含铪材料，如硅酸铪。在一实施例中，省略步骤220和225，从而可以通过顺序地脉冲铪前驱物、清洗气体、硅前驱物、清洗气体、氧化气体和清洗气体形成硅酸铪材料。在另一实施例中，省略步骤240和245，从而可以通过顺序地脉冲铪前驱物、清洗气体、氧化气体、清洗气体、硅前驱物和清洗气体形成硅酸铪材料。
图4所示为根据本发明的另一实施方式用于形成含铪材料，诸如硅酸铪的示例性工艺序列300。将衬底装载到能够形成循环沉积并且工艺条件可调的工艺腔室中(步骤310)。在开始ALD周期以前将衬底暴露于预浸工艺中并进行清洗(步骤315)。将该衬底暴露于在时间上完全或者至少部分重叠的铪前驱物脉冲和硅前驱物脉冲中，并且两脉冲引入工艺腔室的时间范围为从约0.1秒到约5秒(步骤320)。将清洗气体脉冲输送到工艺腔室中以清洗或者以其它方式去除残留的铪前驱物、硅前驱物或者副产品。接下来，将氧化气体脉冲引入工艺腔室中(步骤340)。该氧化气体可以包括几种氧化剂，诸如来自WVG系统的水蒸汽和氧。再次将清洗气体脉冲引入至该处理腔室中(步骤350)以清洗或者以其它方式去除所任意残留的还原化合物。适用的载送气体或者清洗气体包括氦、氩、氮、氢、合成气体、氧及其组合。
参照步骤360，在各沉积周期以后(步骤320到350)，在该衬底表面沉积具有第一厚度的含铪材料，诸如硅酸铪。在该ALD工艺中，每个沉积周期均形成厚度范围为约0.5到约10的层。根据具体的器件需求，要求随后的沉积步骤沉积具有预定厚度的含铪材料。可以不断重复沉积周期(步骤320到350)直到在步骤360达到含铪材料所需或者预定的厚度，并在步骤370停止工艺序列300。
图4所示的ALD工艺的工艺腔室的压力范围为约1Torr到约100Torr，优选地为从约1Torr到约20Torr，并更优选地为从约1Torr到约10Torr。通常该衬底温度范围为约70℃到约1,000℃，优选为约100℃到约650℃，并且更优选为约250℃到约500℃。如步骤115所述，步骤315中的任选的预浸工艺位于启动ALD周期之后并且可以包括将该衬底暴露于含有产生于WVG系统的水蒸汽的氧化气体中。
在步骤320中，通过使铪前驱物和硅前驱物流入工艺腔室引入两种前驱物作为前驱物脉冲，即，脉冲的前驱物为向工艺腔室中引入该前驱物。在图5A-5E中，t1对应于在步骤320期间脉冲引入铪前驱物和硅前驱物的时间周期，而t2对应于步骤330、340和350期间的时间周期。这里没有按比例绘制时间周期t1和t2。在图5A所示的实施方式中，在同一时间周期独立地脉冲引入铪前驱物和硅前驱物，使得两种前驱物均在整个t1流入。例如，同时脉冲引入铪前驱物和硅前驱物约2秒钟。
在图5B-5C所示的另一实施方式中，独立脉冲引入铪前驱物和硅前驱物，使得在整个t1流入第一前驱物，而在t1的中间阶段流入第二前驱物。例如，在图5B中t1的持续时间约为2秒，脉冲引入铪前驱物约2秒并在脉冲引入铪前驱物的中间阶段脉冲引入硅前驱物约1.5秒。或者，在图5C中t1的持续时间约为2秒，并在脉冲引入铪前驱物的中间阶段脉冲引入硅前驱物约1.5秒。
在图5D-5E所示的另一实施方式中，以局部重叠的方式独立脉冲引入铪前驱物和硅前驱物，使得第一前驱物在t1开始时流入而未到达t1末端就结束，第二前驱物在t1开始时不流入但是一直持续到t1末端才结束。例如，在图5D中t1的持续时间约为2秒，在t1开始时脉冲引入铪前驱物约1.5秒，而从开始脉冲引入硅前驱物到t1末端的时间约为1.5秒。在另一实施例中，在图5E中t1的持续时间约为2秒，在t1开始时脉冲引入硅前驱物约1.75秒，而从开始脉冲引入铪前驱物到t1末端的时间约为1.5秒。
可选地，在时间周期t1的任意部分期间均可以脉冲引入第一前驱物(例如，铪前驱物)，同时在时间周期t1的任意部分期间也可以脉冲引入重叠或者不重叠的第二前驱物(例如，硅前驱物)。因此，铪前驱物、硅前驱物或者其他前驱物可以以时间部分重叠或者无时间重叠的方式独立地脉冲引入该工艺腔室。在一实施例中，t1的持续时间约为2秒，脉冲引入铪前驱物约2秒并在脉冲引入铪前驱物期间脉冲引入硅前驱物约0.5秒。在另一实施例中，t1的持续时间约为2秒，脉冲引入铪前驱物约0.5秒并在无重叠或者不在铪前驱物脉冲期间脉冲引入硅前驱物约0.5秒。在另一实施例中，t1的持续时间约为2秒，脉冲引入铪前驱物约0.5秒并在重叠或者在铪前驱物脉冲期间脉冲引入硅前驱物约0.5秒。此外，在时间周期t1还可以脉冲引入多脉冲第一前驱物和第二前驱物。
在步骤320期间，以约5sccm到200sccm的流速将铪前驱物引入到工艺腔室中。该铪前驱物通常和诸如氮气的载送气体一起流入，其总体流速范围为约50sccm到约1000sccm。将铪前驱物引入到工艺腔室中的时间范围为约0.1秒到约10秒。在一实施方式中，脉冲引入铪前驱物的时间范围为约1秒到约5秒，例如约3秒。在另一实施方式中，脉冲引入铪前驱物的时间范围为约0.1秒到约1秒，例如约0.5秒。在某些实施例中，该铪前驱物优选为四氯化铪，而在其他实施例中，铪前驱物优选为TDEAH。
通常通过将含有铪前驱物的载送气体通过安瓿282将铪前驱物分配到工艺腔室280中，如图2A所示。该载送气体和铪前驱物形成经过管280进入工艺腔室280的前驱物蒸汽。根据铪前驱物，该安瓿282的温度保持在约20℃到约300℃。在一实施例中，含有HfCl4的安瓿282温度范围为约150℃到约200℃。在另一实施例中，可以对含有液体前驱物(例如，TDEAH、TDMAH、TDMAS或者Tris-DMAS)的安瓿282施加压力以将该液体前驱物传送到喷射阀系统281中。通常，对于含有液体前驱物的安瓿282施加的压力范围为约138kPa(约20psi)到约414kPa(60psi)并且可以加热到约100℃或以下的温度，优选范围为约20℃到约60℃。该喷射阀系统281将液体前驱物与载送气体结合以形成注入到工艺腔室280中的前驱物蒸气。载送气体可以包括氮气、氩气、氦气、氢气或者其组合并且可以将该载送气体预热到约85℃到约150℃的温度范围。
在步骤320期间，以约5sccm到约200sccm或者约1mg/min到约50mg/min的流速范围将硅前驱物引入到工艺腔室中，优选为约5mg/min到约25mg/min。通常采用诸如氮气的载送气体以约50sccm到约1,000sccm的总流速引入该硅前驱物。将该硅前驱物脉冲引入到工艺腔室中的时间范围为约0.1秒到约10秒。在一实施方式中，脉冲引入该硅前驱物的时间范围为约1秒到约5秒，例如约3秒。在另一实施方式中，脉冲引入该硅前驱物的时间范围为约0.1秒到约1秒，例如约0.5秒。在某些实施例中，硅前驱物优选为Tris-DMAS或者TDMAS，而在其他实施例中，该硅前驱物优选为硅烷。
在步骤320期间的另一实施方式中，在将前驱物脉冲引入工艺腔室以前可以结合铪前驱物和硅前驱物。通过按比例结合铪和硅前驱物形成铪/硅前驱物混合物以在沉积的含铪材料中达到所需的Hf∶Si比。通过让载送气体流过安瓿中的前驱物混合物形成含有铪/硅前驱物混合物的工艺气体。通过ALD工艺顺序地脉冲引入铪/硅前驱物混合物以及氧化气体以形成含铪材料，诸如硅酸铪材料。通过这里所述的工艺沉积的硅酸铪具有实现化学分子式HfSiyOx，通过改变铪/硅前驱物混合物中铪前驱物和硅前驱物的摩尔比可以调整y。例如，如果铪前驱物和硅前驱物的比例大于1，则y可能小于1。但是，如果铪前驱物和硅前驱物的比例小于1，则y可能大于1。
在步骤340中，以约20sccm到约1,000sccm的流速范围将氧化气体引入到工艺腔室280中，优选范围为约50sccm到约200sccm。将该氧化气体脉冲引入到工艺腔室280中的时间范围为约0.1秒到约10秒。在一实施方式中，脉冲引入该氧化气体的时间范围为约1秒到约3秒，例如约1.7秒。在另一实施方式中，脉冲引入该硅前驱物的时间范围为约0.1秒到约1秒，例如约0.5秒。
在工艺序列300的一实施方式中，氧化气体产生于WVG系统286中，该WVG系统286通过管道287与工艺腔室280流体连接。氢源气体和氧源气体各以约20sccm到约200sccm的流速范围流入WVG系统286中。通常，氧源气体的流速大于氢源气体的流速，例如，该氢源气体流速为约100sccm而所述氧源气体流速为约120sccm。因此，从WVG系统286中流出的水蒸汽中富含氧。例如，当该氢源气体流速为约100sccm而所述氧源气体流速为约120sccm时，氧化气体的流出物包括局部流速为约100sccm的水蒸汽和流速为约70sccm的氧。在另一实施例中，该氢源气体流速为约250sccm而所述氧源气体流速为约100sccm。因此，从WVG系统286中流出的水蒸汽中富含氢。
在步骤330和350期间，通常以约2slm到约22slm的流速范围，优选为约10slm引入诸如氩气或者氮气的清洗气体脉冲。每个工艺周期(步骤320到350)发生的时间范围为约0.5秒到约20秒。在一实施例中，该工艺周期持续10秒。在另一实施例中，该工艺周期约持续2秒。
在某些含有工艺序列100、200和300的实施方式中，可以采用诸如传统氧化剂的替代氧化气体代替含有在WVG系统中形成的水蒸汽的氧化气体。将替代氧化气体从含有并非来自WVG系统的水的氧源引入到工艺腔室中，该替代气体诸如氧气(O2)、臭氧(O3)、氧原子(O)、双氧水(H2O2)、二氧化氮(N2O)、一氧化氮(NO)、五氧化二氮(N2O5)、二氧化氮及其衍生物或者其组合。尽管本发明的实施方式提供了受益于含有从WVG系统形成的水的氧化气体的工艺，但是在这里所述沉积工艺期间形成含铪材料或者其他介电材料时，其他实施方式也可以提供采用替代氧化气体或者传统氧化剂的工艺。
多种前驱物落入本发明用于沉积这里所述介电材料的实施方式保护范围内。一个重要的前驱物特性为具有良好的蒸汽压。前驱物在环境温度和压力下可以为气体、液体或者固体。但是，在ALD腔室内使用蒸发的前驱物。有机金属化合物含有至少一金属原子和至少一含有机物的官能团，诸如氨基化合物、烷基、烷氧基、烷基氨基或者苯胺。前驱物可以包括有机金属、无机物或者卤化物。
示例性铪前驱物包括含有配合基的铪化合物诸如卤化物、烷基氨基、环戊二烯基、烷基、醇盐及其衍生物或者其组合。用作铪前驱物的铪卤化物可以包括HfCl4、Hfl4和HfBr4。用作铪前驱物的烷基氨基铪化合物包括(RR’N)4Hf，其中R或者R’为独立的氢、甲基、乙基、丙基或者丁基。用于沉积含铪材料的铪前驱物包括(Et2N)4Hf，(Me2N)4Hf，(MeEtN)4Hf，(tBuC5H4)2HfCl2，(C5H5)2HfCl2，(EtC5H4)2HfCl2，(Me5C5)2HfCl2，(Me5C5)HfCl3，(iPrC5H4)2HfCl2，(iPrC5H4)HfCl3，(tBuC5H4)2HfMe2，(acac)4Hf，(hfac)4Hf，(tfac)4Hf，(thd)4Hf，(NO3)4Hf，(tBuO)4Hf，(iPrO)4Hf，(EtO)4Hf，(MeO)4Hf或者其衍生物。优选地，在沉积工艺期间所采用的铪前驱物包括HfCl4，(Et2N)4Hf或(Me2N)4Hf。
用于沉积含硅材料的典型硅前驱物包括硅烷、烷基氨基硅烷、硅烷醇或者烷氧基硅烷，例如硅前驱物可以包括(Me2N)4Si，(Me2N)3SiH，(Me2N)2SiH2，(Me2N)SiH3，(Et2N)4Si，(Et2N)3SiH，(MeEtN)4Si，(MeEtN)3SiH，Si(NCO)4，MeSi(NCO)3，SiH4，Si2H6，SiCl4，Si2Cl6，MeSiCl3，HSiCl3，Me2SiCl2，H2SiCl2，MeSi(OH)3，Me2Si(OH)2，(MeO)4Si，(EtO)4Si或者其衍生物。其他用作硅前驱物的烷基氨基硅烷化合物包括(RR’N)4-nSiHn，其中R或者R’为独立的氢、甲基、乙基、丙基或者丁基并且n＝0～3。其他烷氧基硅烷可以通过通用化学分子式(RO)4-nSiLn表示，其中R＝甲基、乙基、丙基或者丁基而L＝H，OH，F，Cl，Br或者I及其混合物。此外，在本发明的某些实施方式中使用高级硅烷作为硅前驱物。在2003年10月17日提交的共同转让的美国国家专利申请序列号No.10/688,797中公开了高级硅烷，该申请题目为“Silicon-containing LayerDeposition with Silicon Compounds”，其公开号为US 20040224089，在此为了描述硅前驱物引入其全部内容作为参考。优选地，在这里的沉积工艺中所采用的硅前驱物包括(Me2N)3SiH、(Et2N)3SiH、(Me2N)4Si、(Et2N)4Si或者SiH4。
在一些实施方式中，在这里所述的工艺期间可以将氮添加到含铪材料和其他沉积的介电材料中。在一实施例中，可以氮化铪的氧化物材料以形成铪的氮氧化物材料，以及可以对硅酸铪材料进行氮化以形成铪硅氮氧化物材料。在一实施例中，硅酸铪膜为沉积的富硅物质并且在衬底/介电界面附近包含很少或者不包含氮。随着薄膜厚度增加，为了增加介电常数，向薄膜中引入更多的铪。还可以向成批薄膜中添加氮以减小掺杂剂穿过薄膜进行的扩散。可选地，为了提供稳定的覆盖层可以在薄膜顶部附近添加氮。
通过氮轰击诸如通过氮等离子体在含氮环境中退火衬底，和/或在ALD周期中将氮前驱物包括到附加半反应中，还可以将氮添加到含铪材料和其他介电材料中。氮等离子体工艺可以包括在半反应后、在完成ALD周期时和/或完成沉积含铪材料时将衬底暴露在氮等离子体工艺中。例如，将氧化铪薄膜暴露在氮化远程等离子体中以形成铪氮氧化物或者将硅酸铪薄膜暴露在该等离子体中以形成铪硅氮氧化物薄膜。
在另一实施方式中，在诸如N2，NH3，N2H4，NO，N2O，氮原子或者其组合的含氮环境中退火沉积在衬底上的含铪材料。将衬底加热到约800℃到1,100℃约15秒到约10分钟。例如，在装满NH3的腔室中900℃下对含有硅酸铪薄膜的衬底加热退火1分钟以形成铪硅氮氧化物薄膜。
在另一实施方式中，在ALD工艺期间可以通过设置包含铪前驱物半反应、硅前驱物半反应、氮前驱物半反应和至少一氧化气体半反应周期形成铪硅氮氧化物材料。在周期中氮前驱物半反应可以以相对于铪、硅和氧前驱物半反应的任意比例添加到ALD工艺中。在一实施例中，大约铪、硅和氧前驱物半反应的每两个ALD周期添加一次所述氮前驱物半反应。而且，为了控制在薄膜深度内结合的氮的比例可以改变周期比。在一实施方式中，ALD工艺可以形成铪硅氮氧化物分级薄膜，该薄膜顶部附近的氮浓度高于薄膜底部。通常，含有较高氮浓度的薄膜顶部约为该薄膜的20％左右，优选为薄膜的10％左右，并且更优选为5％左右。如果省略硅前驱物半反应，则可以通过相似的ALD周期生长铪氮氧化物薄膜。优选地，该氧化气体含有形成于WVG系统的水蒸汽。
典型的氮前驱物可以包括：NH3、N2、肼(N2H4或者MeN2H3)、胺(例如Me3N、Me2NH或者MeNH2)、苯胺(例如C6H5NH2)，有机叠氮化物(例如，MeN3或者Me3SiN3)、无机叠氮化物(例如NaN3或者Cp2CoN3)，游离氮化物(例如，N3、N2、N、NH或者NH2)、其衍生物或者其组合。可以通过加热、热线或者等离子体产生游离氮化物。
在替代实施方式中，通过与含有产生于WVG系统的水蒸汽的氧化气体一起顺序脉冲引入金属前驱物可以形成各种金属氧化物和金属硅酸盐。通过用其他金属前驱物替代铪和/或硅前驱物可以改变如上所公开的ALD工艺(例如工艺序列100、200和300)以形成其他介电材料，诸如铝酸铪、硅酸钛、锆的氧化物、硅酸锆、铝酸锆、钽的氧化物、硅酸钽、钛的氧化物、硅酸钛、硅氧化物、铝的氧化物、硅酸铝、镧的氧化物、硅酸镧、铝酸镧、其氮化物、其衍生物或者其组合。在一实施方式中，可以同时执行两个或者多个ALD工艺以在另一层顶部沉积一层。例如，组合工艺包含形成第一介电材料的第一ALD工艺和形成第二介电材料的第二ALD工艺。该组合工艺可以用于制造各种含铪材料，例如硅酸铝铪或者铪铝硅氮氧化物。在一实施例中，通过在衬底上沉积第一含铪材料并随后在其上沉积第二含铪材料形成介电层叠材料。所述第一和第二含铪材料的成分可以改变，从而一层可以包含铪氧化物而另一层可以包含硅酸铪。一方面，所述底层含有硅。在这里所述的ALD工艺期间所采用的替代金属前驱物包括ZrCl4，Cp2Zr，(Me2N)4Zr，(Et2N)4Zr，TaF5，TaCl5，(tBuO)5Ta，(Me2N)5Ta，(Et2N)5Ta，(Me2N)3Ta(NtBu)，(Et2N)3Ta(NtBu)，TiCl4，TiI4，(iPrO)4Ti，(Me2N)4Ti，(Et2N)4Ti，AlCl3，Me3Al，Me2AlH，(AMD)3La，((Me3Si)(tBu)N)3La，((Me3Si)2N)3La，(tBu2N)3La，(iPr2N)3La，其衍生物或者其组合。
在所述沉积工艺期间通过这里的各种实施方式形成的介电材料产品存在许多工业应用。在微电子工业中，该产品材料可以用作高K晶体管栅介电材料、晶体管栅界面工程、高K电容介电材料(DRAM)、籽晶层、扩散阻挡层、粘附层、绝缘层和用于构图表面的功能化表面基团(例如，选择性沉积)。在微电子机械(MEMS)领域中，在所述工艺形成的材料可以用作绝缘或者结构膜。
硬件
图6所示为根据这里所述的实施方式可以用于执行集成电路制造工艺腔室的示意性截面图。工艺腔室610通常包括用于支撑衬底(未示出)的衬底支撑底座648。衬底支撑底座648可以采用位移装置648A在工艺腔室610内部的垂直方向上是可移动的。
根据具体的工艺，在沉积前或者沉积期间可以将衬底加热到某一所需温度。例如，可以采用嵌入式加热元件652A加热衬底支撑底座648。通过从AC电源652向加热元件652A施加电流可以电阻地加热衬底支撑底座648。相应地，通过加热的衬底支撑底座648加热衬底(未示出)。可选择地，还可以采用诸如灯(未示出)的辐射加热器加热衬底支撑底座648。
还可以将诸如热偶的温度传感器650A嵌入到陈地支撑底座648中以通过传统方式监控底座648的温度。测量得到的温度用于反馈环路中以控制用于加热元件652A的AC电源652，从而使得该衬底温度可以保持或者控制在适于具体工艺应用的所需温度。
真空泵618用于对工艺腔室610抽真空并且保持工艺腔室610内部的压力。工艺气体通过气体歧管634引入工艺腔室610，该气体歧管610位于衬底支撑底座648上方。气体歧管634与气路板(未示出)连接，该气路板控制并向工艺腔室610提供各种工艺气体。
通过流量控制器(未示出)和微处理控制器670适当地控制和调节流过气体歧管634的气体。气体歧管634引入工艺气体并使其在工艺腔室610中均匀分布。此外，任选地，对气体歧管634进行加热以防止任何反应气体在歧管内凝结。
气体歧管634包括多个电子控制阀(未示出)。这里所采用的电子控制阀是指任何可以向工艺腔室610快速且精确地提供气流的控制阀，其开关阀的时间周期范围为约0.01秒到约10秒，优选为约0.1秒到约5秒，例如较长周期可以持续约3秒，而较短周期可以持续约0.5秒。
微处理控制器670可以是任意形式的通用计算机处理器(CPU)其中之一，其可以用在用于控制各种腔室的工业装置和子处理器中。该计算机可以采用任意适合的存储器，诸如随机访问存储器、只读存储器、软盘驱动、光盘驱动、硬盘或者任何其他形式的数字存储、本地或者远程存储。将用于支持该处理器的各种支持电路以传统方式与CPU耦接。如果需要的话，软件例程可以存储在存储器上或者可以通过远程源(例如，计算机或者服务器)执行软件程序。
执行该软件例程以启动工艺配方或者序列。在执行过程中，该软件例程将通用计算机转换为控制腔室操作的专用计算机从而执行腔室工艺。例如，可以软件例程可以用于根据本发明执行的工艺序列精确地控制电子控制阀的启动。可选择地，可以在硬件中执行该软件例程，诸如专用集成电路或者其他类型的硬件实施或者软件和硬件的组合。
图7为工艺腔室680的一个实施方式的示意性截面图，该工艺腔室680包括用于诸如原子层沉积或者快速化学气相沉积的循环沉积的气体输送装置730。在2001年12月21日提交的共同转让的美国专利序列号10/032,284，其公开号为US20030079686且其申请题目为“Gas Delivery Apparatus and Methodfor Atomic Layer Deposition”以及2002年10月25日提交的共同转让的美国专利序列号10/281,079，其公开号为US20030121608且其题目为“Gas DeliveryApparatus for Atomic Layer Deposition，中描述了对于工艺腔室680的详细描述，二者在此引入作为参考。这里所用到的术语原子层沉积(ALD)、快速化学气相沉积和连续气相沉积是指连续引入反应剂或者前驱物以在衬底结构上沉积薄层。可以重复连续引入反应剂的步骤以形成多个薄层从而形成为具有所需厚度的共形的层。在一些实施方式中，可以和其他前驱物(例如，水蒸汽)一起连续脉冲引入包含多于一前驱物(例如铪前驱物和硅前驱物)。该工艺腔室680也可以适用于其他沉积技术。
工艺腔室680包含具有侧壁684和底686的腔室主体682。工艺腔室680中的狭缝阀688为机械手(未示出)提供入口以传递和从工艺腔室680撤回衬底690，诸如直径为200mm或者300mm的半导体晶片或者玻璃基板。
在工艺腔室680中衬底支撑件692将衬底690支撑在衬底容纳表面691上。将该衬底支撑件692安装到升降电机714上以提升或者降低衬底支撑件692以及设置于其上的衬底690。在工艺腔室680中安装连接在升降电机718上的升降板716并且该升降板716提升或者降低以可移动的方式贯穿衬底支撑件692设置的针720。针720提升或者降低位于衬底支撑件692表面上方的衬底690。衬底支撑件692可以包括用于在工艺过程中将衬底690固定到衬底支撑件692上的真空卡盘、静电卡盘或者卡环。
可以加热衬底支撑件692以提高设置于其上的衬底690的温度。例如，可以采用诸如电阻加热器的嵌入式加热装置加热衬底支撑件692，或者可以采用诸如设置在衬底支撑件692上方的加热灯辐射加热该衬底支撑件692。可以在衬底支撑件692上设置清洗环722以限定向衬底690周边部分提供清洗气体的清洗沟道724从而防止沉积到衬底周边部分。
在腔室主体682上部设置气体输送装置730以向工艺腔室680提供诸如工艺气体和/或清洗气体的气体。真空系统778与抽吸通道779连接以从工艺腔室680中抽出任意所需的气体并帮助保持工艺腔室680的抽吸区域766内部的所需压力或者所需压力范围。
在一实施方式中，工艺气体和/或清洗气体通过气体输送装置730相对于衬底690平面的法线方向(例如90°)进入工艺腔室680。因此，衬底690的表面以对称形式暴露在可以在衬底上形成均匀薄膜的气体中。该工艺气体可以包括位于一个脉冲期间的含铪化合物(例如，TDEAH或者HfCl4)以及位于另一脉冲的氧化气体(例如，产生于WVG系统的水蒸汽)。
图7所示的工艺腔室680可以比图6所示的腔室610产生更均匀的薄膜。此外，和工艺腔室610相比，由于工艺腔室680通常会花更少的时间进行清洗以及用前驱物使衬底饱和，工艺腔室680采用了更小的循环时间。因此，工艺腔室610和680可以引入含铪化合物约20秒或者更少，优选地工艺腔室680可以引入含铪化合物约10秒或者更少，更优选的为5秒或者更少，例如，约3秒或者约0.5秒。
在一实施方式中，气体输送装置730包括腔室盖732。腔室盖732包括从腔室盖732的中心部分延伸出来的扩张式通道734和从扩张式通道734向腔室盖732的周边部分延伸的下表面760。下表面760的尺寸和形状使其基本覆盖设置在衬底支撑件692上的衬底690。腔室盖732在与衬底690的外围部分相邻的腔室盖732的外围部分处可以具有气塞762。盖部分772包括扩张式通道734部分和进气口736A和736B。扩张式通道734具有进气口736A和736B以从两个类似的阀门742A、742B提供气流。该气体可以通过阀门742A、742B一起和/或单独通过阀门742A、742B提供。
在一实施方式中，腔室盖732由金属材料构成，诸如不锈钢(例如，选择性含镍的铁铬合金)、铝、其衍生物及其合金或者其组合。在替代实施方式中，腔室盖732包含绝热材料，诸如熔融石英、蓝宝石、热解氮化硼(PBN)材料、陶瓷、其衍生物或者其组合。在一实施例中，向腔室盖732添加用于覆盖扩张式通道734的主要部分和下表面760(未示出)的绝热衬垫。优选地，可以将扩张式通道734和下表面760机械加工为由绝热材料构成的腔室盖732。在工艺腔室680中可以添加由同样或者类似的绝热材料构成的附加衬垫。在一实施例中，狭缝阀门688包含衬垫687，侧壁684含有衬垫683并且底表面685含有衬垫689。
在一结构中，阀门742A和阀门742B与独立的反应气体源耦合但是优选地与同一清洗气体源耦合。例如，阀门742A与反应气体源738耦合而阀门742B与反应气体源739耦合，并且两个阀门742A、742B同时与清洗气体源740耦合。阀门742A、742B各包括具有阀座组件744A、744B的输送管743A、743B并包括具有与阀门752A、752B流体连通的阀座组件746A、746B的清洗管路745A、745B。输送管743A、743B与反应气体源738和739流体连通并且与扩张式通道734的进气口736A和736B流体连通。在替代实施方式(未示出)中还可以将其他反应气体源、输送管、进气口和阀门添加到气体输送装置730中。输送管743A、743B的阀座组件744A、744B控制从反应气体源738和739流向扩张式通道734的反应气流。清洗管路745A、745B与清洗气体源740流体连通并与输送管743A、743B的阀座组件744A、744B的输送管743A、743B下游相交。清洗管路的745A、745B的阀座组件746A、746B控制从清洗气体源740流向输送管743A、743B的清洗气流。如果载送气体用于传送来自反应气体源738和739的反应气，则该同一气体可以用作载送气体和清洗气体(例如，用作载送气体和清洗气体的氮气)。
每个阀座组件744A、744B、746A、746B可以包括膜片和阀座。该膜片可以因受承载而打开或关闭并且可以分别地因受到控制而关闭或打开。该膜片可以为气动控制或者可以为电动控制。气动控制阀门的实施例包括可以从Fujikin和Veriflow购买到的气动控制阀门。电动控制阀门的实施例包括可以从Fujikin购买到的电动控制阀门。可编程逻辑控制器748A、748B与阀门742A、742B耦合以控制阀门742A、742B的阀座组件744A、744B、746A、746B膜片的动作。气动控制阀门可以提供时间周期低至约0.02秒的的气体脉冲。电动控制阀门可以提供时间周期低至约0.005秒的气体脉冲。通常气动和电动控制阀门可以提供时间周期在高至约3秒的气体脉冲。尽管还可以存在更高时间周期的气体脉冲，但是典型的ALD工艺采用ALD阀门，以产生气体脉冲同时开启的时间间隔为约5秒或者更低，优选为约3秒或者约3秒以下，更优的情况为约2秒或者约2秒以下。在一实施方式中，ALD阀门脉冲的间隔范围为约0.005秒到约3秒，优选为约0.02秒到约2秒并且更优的情况为0.05秒到1秒。电动控制阀门通常需要采用耦合在阀门和可编程逻辑控制器之间的驱动器。
每个阀门742A、742B为零死容积阀门从而当阀门的阀座组件744A、744B关闭时使能来自输送管743A、743B的反应气的冲洗。例如，清洗管路745A、745B设置在与输送管743A、743B的阀座组件744A、744B相邻。当阀座组件744A、744B关闭时，清洗管路745A、745B可以提供清洗气体以冲洗输送管743A、743B。在一实施方式中，为了降低或者防止前驱物凝结，在管路中通入加热的清洗气体(例如，约50℃到约200℃)以加热阀座组件744A、744B以及输送管743A、743B。在所示的实施方式中，清洗管路745A、745B设置为与输送管743A、743B的阀座组件744A、744B稍微分开使得在阀座组件744A、744B打开时清洗气体不会直接输送到阀座组件744A、744B中。将这里所用到的零死容积阀门定义为具有可忽略的死容积的阀门(即，并非必须为零死容积)。
每个阀门742A、742B均可适于提供反应气739、739以及清洗气体740的组合气流和/或独立气流。参考阀门742A，由阀门742A提供的反应气738和清洗气体740的组合气流的实施例包括来自清洗气体源740经过清洗管路745A的连续清洗气流和从反应气体源738经过输送管743A的反应气体脉冲。通过打开清洗管路745A的阀座组件746A的膜片可以提供连续清洗气流。通过打开和关闭输送管743A的阀座744A的膜片可以提供来自反应气体源738的反应气脉冲。参照阀门742A，通过阀门742A提供的反应气738和清洗气体740的分离气流的实施例包括来自清洗气体源740经过清洗管路745A的清洗气体脉冲和来自反应气体源738经过输送管743A的反应气脉冲。通过打开和关闭清洗管路745A的阀座组件746A的膜片可以提供清洗气体脉冲。通过打开和关闭输送管743A的阀座744A的膜片可以提供来自反应气体源738的反应气脉冲。
阀门742A、742B的输送管743A、743B可以经过气体导管750A、750B与进气口736A和736B连接。气体导管750A、750B可以与阀门742A、742B为一体地形成或者分立地形成。一方面，阀门742A、742B与扩张式通道734靠近耦合以减少位于阀门742A、742B和进气口736A和736B之间的输送管743A、743B和气体导管750A、750B的不必要容积。
在图7中，扩张式通道734包括具有某内径的通道，该内径从上部到临近腔室盖732的下表面760的下部逐渐增加。在具体实施方式中，用于处理200mm直径衬底的腔室扩张式通道734的上部737内径为约0.2英寸(0.51cm)到约1.0英寸(2.54cm)之间，优选为约0.3英寸(0.76cm)到约0.9英寸(2.29cm)之间并且更优的情况为约0.3英寸(0.76cm)到约0.5英寸(1.27cm)之间，而位于扩张式通道734的下部735的内径为约0.5英寸(1.27cm)到约3.0英寸(7.62cm)之间，优选为约0.75英寸(1.91cm)到约2.5英寸(6.35cm)之间并且更优的情况为约1.1英寸(2.79cm)到约2.0英寸(5.08cm)之间。
在另一具体实施方式中，用于处理300mm直径衬底的腔室扩张式通道734的上部737内径为约0.2英寸(0.51cm)到约1.0英寸(2.54cm)之间，优选为约0.3英寸(0.76cm)到约0.9英寸(2.29cm)之间并且更优的情况为约0.3英寸(0.76cm)到约0.5英寸(1.27cm)之间，而位于扩张式通道734的下部735的内径为约0.5英寸(1.27cm)到约3.0英寸(7.62cm)之间，优选为约0.75英寸(1.91cm)到约2.5英寸(6.35cm)之间并且更优的情况为约1.2英寸(3.05cm)到约2.2英寸(5.59cm)之间。通常，对扩张式通道应用上述尺寸可以使其提供约500sccm到约3,000sccm范围的总气体流速。
在另一具体实施方式中，可以改变所述尺寸以调整流过其中的气体流速。通常，较大的气流需要较大的直径的扩张式通道。在一实施方式中，可以将该扩张式通道形成为截锥形状(包括类似截锥的形状)。不管气体或者流向扩张式通道734的侧壁或者直接流向衬底，由于气体的膨胀使得气体流速会随着气流经过扩张式通道734而降低。气体流速的降低有助于降低气流吹掉衬底690表面吸附的反应物的可能性。
不希望束缚于理论，通常认为从扩张式通道734的上部737到下部735逐渐增加的直径可以减少气体经过扩张式通道734产生的绝热膨胀，这有助于控制气体温度。例如，气体流经进气口736A和736B进入扩张式通道734时发生突然的绝热膨胀会导致气体温度降低，这会造成前驱物蒸汽凝结并形成颗粒。另一方面，通常认为根据本发明的实施方式的渐变扩展通道734会产生较少的气体绝热膨胀。因此，在气体来回输送过程中可以传输更多的热量，因此，通过控制气体的环境温度(即，控制腔室盖732的温度)可以更容易地控制气体温度。该渐变扩张式通道734可以包括一个或者多个锥形内表面，诸如锥形直表面、凹表面、凸表面或者其组合或者可以包括一个或者多个锥形内表面部分(即，锥形部分和非锥形部分)。
在一实施方式中，在临近扩张式通道734的上部737的位置设置进气口736A和736B。在其它实施方式中，可以沿位于上部737和下部735之间的扩张式通道734纵向方向设置一个或者多个进气口736A和736B。不希望束缚于理论，从进气口736A和736B流入并经过腔室盖732的扩张式通道734的气体形成环形流。尽管不知道经过扩张式通道734的确切流模式，但是通常认为该环形流可以以诸如涡流、螺旋流(helix flow)、旋流(spiral flow)、或者其衍生形状的流模式经过扩张式通道734。环形流可以提供在位于下部735和衬底容纳表面691之间与衬底690分离的间隔部分相对的处理区域。一方面，由于环形流的扫除操作流过扩张式通道734的内表面因此涡流有助于对于扩张式通道734进行更有效清洗。此外，该环形气流还对衬底690的整个表面提供恒定且共形的气体分配。
在图7中，可以将诸如编程的个人计算机、工作站计算机等的控制单元780与工艺腔室680连接以控制工艺条件。例如，可以配置控制单元780使其在不同的衬底处理序列期间控制来自气体源738、739经过阀门742A、742B的各种工艺气体和清洗气体的气流。作为示例，控制单元780包括中央处理单元(CPU)782、支持电路784和含有相关控制软件783的存储器786。控制单元780还配置为控制WVG系统286和/或调节安瓿282。
控制单元780可以是能够在用于控制各种腔室和子处理器的工业装置中使用的任意形式的通用计算机处理器其中之一。CPU782可以采用任意适用的存储器786，诸如随机存储器、只读存储器、软盘驱动、光盘驱动、硬盘或者任何其他形式的本地或者远程的数字存储器。用于支持工艺腔室680的各种支持电路可以与CPU782耦合。控制单元780可以和临近其他独立腔室元件的另一控制器耦合，诸如阀门742A、742B的可编程逻辑控制器748A和748B。如图7所示，通过总称为信号总线788的多个信号电缆操作位于控制单元780和工艺腔室780的各种其他元件之间的双向通信。除了控制来自气体源738、739的工艺气体和清洗气体以及阀门742A、742B的可编程逻辑控制器748A和748B以外，还可以配置该控制单元780使其负责晶片处理的其他活动的自动控制，诸如晶片传输、温度控制、腔室抽真空、以及其它活动，其中部分内容在其他地方进行了描述。
在另一实施方式中，工艺腔室680可以适于共同接收三种或者三种以上的气流、部分共同(例如，三种气流中的两种)或者分别通过连接到三个或三个以气体管的三个或者三个以上进气口接收。每个导管均与单个或者多个阀门耦合。在2001年12月21日提交的共同转让的美国专利序列号10/032,284中公开了适于流入三种或者三种以上气流的工艺腔室680，其公开号为US20030079686且其申请题目为“Gas Delivery Apparatus and Method forAtomic Layer Deposition”，在此引入作为参考。在一实施例中，所述三种气流可以包含铪前驱物、硅前驱物和氧化气体，这里第一气流包括TDEAH、TDMAH或者HfCl4，第二气流包括TDMAS、Tris-DMAS或者硅烷并且第三气流包括含有来自WVG系统的水蒸汽的氧化气体。
图8所示为根据所述实施方式用于执行集成电路制造的工艺腔室810的示意性截面图。工艺腔室810在功能上和工艺腔室680相似并且包含可以在高温下(例如，＜800℃)工作的绝热材料。该工艺腔室810包含由诸如熔融石英、蓝宝石、热解氮化硼(PBN)材料、陶瓷、其衍生物或者其组合的绝热材料构成的衬垫。在一实施方式中，工艺腔室680中的气体输送装置730也适用于工艺腔室810。
工艺腔室810通常包括用于支撑衬底802的衬底支撑底座812。衬底支撑底座812在工艺腔室810内部可以旋转和垂直方向移动。衬底支撑底座812可以包含加热元件以控制其上衬底802的温度。在工艺腔室810的盖832上设置盖部分872并该盖部分872包含进气口836a、836b、836c和836d。盖部分872还可以包含用于在等离子体工艺期间中使用的微波装置或者远程等离子体装置的适配器874，等离子体工艺诸如PE-ALD工艺、预清洗工艺或者氮化工艺。可选择地，盖部分872可以不包括适配器874。
气体输送系统811通过盖部分872与工艺腔室810连接。气体输送系统811包含至少一个以及与约10部件组进气口836、管道系统841、阀843和/或阀845以及源842和/或源844一样多。如图8所示，气体输送系统811包含由进气口836a、836b、836c、836d、管道系统841a、841b、841c、841d、阀门843a、843b、843c、843d、阀门845a、845b、845c、845d、源842a、842b、842c、842d和源844a、844b、844c、844d构成的四个部件组。
在替代实施方式中，管道系统841还包括在一端形成多个气嘴的逐渐扩展气体导管，设置该导管与进气口836a、836b、836c、836d流体连接。在2005年4月29日提交的共同转让的美国专利申请序列号11/119,388中进一步描述了在这里所述某些实施方式中采用的气嘴和末端，该申请题目为“Control ofGas Flow and Delivery to Suppress the Formation of Particles in an MOCVD/ALDSystem”，在此引入其全部内容作为参考以支持逐渐扩展气体导管的公开内容。该气体导管的几何形状通过让气体以逐渐扩展的方式经过逐渐增大的锥形流通道以防止温度下降过大。在一实施方式中，该流通道经过约30mm到约100mm的距离从约3mm到约15mm的直径范围过渡到进气口处约10mm到约20mm的较大直径范围。流通道直径逐渐增加使得以保持均衡的方式扩散气体并防止迅速损失热量从而基本保持恒定温度。扩张式气体导管可以包括一个或者多个锥形内表面，诸如锥形直表面、凸表面、凹表面、其衍生物或者其组合或者可以包括一个或者多个锥形内表面段(例如，锥形部分和非锥形部分)。
管道系统841包含一个或者几个导管以及和进气口836、阀门843和845和源842和844连接的管。阀门843控制从源842至进气口836的前驱物或者气体的引入并且阀门845控制从源844至进气口836的前驱物或者气体的引入。阀门843和845可以包括阀门以及包含膜片和阀座的阀座组件。气动控制阀门可以提供低至约0.020秒的时间周期的气体脉冲。电动控制阀门可以提供低至约0.005秒的时间周期的气体脉冲。通常，气动和电动控制阀门可以提供高至约3秒的时间周期的气体脉冲。尽管还可以存在更高时间周期的气体脉冲，但是典型的ALD工艺采用ALD阀门，该ALD阀门产生气体脉冲同时开启的时间间隔为约5秒或者更低，优选为约3秒或者约3秒以下，更优选的情况为约2秒或者约2秒以下。在一实施方式中，ALD阀门脉冲的间隔范围为约0.005秒到约3秒，优选为约0.02秒到约2秒并且更优选的情况为约0.05秒到约1秒。电动控制阀门通常需要采用耦合在阀门和可编程逻辑控制器之间的驱动器。可以将诸如编程的个人计算机、工作站计算机等的控制单元(未示出)包含在工艺腔室810中以控制这里所述的工艺条件，所述工艺腔室810包括阀门843、845和源842、844和真空系统833、衬底支撑件812、WVG系统286和安瓿282。
源842、844在沉积工艺期间可以提供所用到的前驱物源、清洗气体源和/或载送气体源。前驱物源可以包括不止一种化学前驱物(例如，铪前驱物和硅前驱物)并且可以包括载送气体。前驱物源包括安瓿、鼓泡(bubbler)、槽、罐或者筒。此外，前驱物源还包括与这里所述的气体输送系统811流体连接的水蒸汽产生系统(WVG)。通常为槽、罐、筒或者内置管道连接的供应系统的清洗气体源和/或载送气体源可以向气体输送系统811提供氮气、氩气、氦气、合成气体或者所述气体的组合。
在盖部分872内部沿扩张式通道834的纵向方向设置进气口836a、836b、836c、836d。不希望束缚于理论，从进气口836a、836b、836c、836d流入并经过扩张式通道834的气体形成环形流。尽管不知道经过扩张式通道834的确切流模式，但是通常认为该环形流可以以诸如涡流、螺旋流(helix flow)、旋流(spiral flow)、或者其衍生的流模式经过扩张式通道834。环形流提供在位于漏斗状衬垫820和衬底支撑件812之间的处理区域与衬底802分离的间隔部分相对。一方面，由于环形流在整个扩张式通道834的内表而的扫除操作因此涡流有助于更有效地清洗扩张式通道834。此外，该环形气流还对衬底802的整个表面提供恒定且共形的气体输送。
图8和图9A-9B示出了绝热衬垫的示意图，该绝热衬垫可用在本文所述的沉积工艺中的工艺腔室810和其它工艺腔室内。扩张式管道834可形成在盖部分872内和漏斗状衬垫之间。绝热体870设置在盖部分872周围。漏斗状衬垫820可通过用漏斗状衬垫820的突出部分表面818对齐扣环衬垫819的突出部分表面817由扣环衬垫819固定在正对盖832下侧。扣环衬垫819和由诸如配件、螺栓、螺钉或钉的紧固件837连接在盖832的下侧。在一实例中，紧固件837为插入并设置在扣环衬垫819的凹槽816中的配合。漏斗状衬垫820也可包括宽松安装的几个钉838用来在处于加热工艺时给漏斗状衬垫820提供热膨胀的空间。在一实施方式中，在热膨胀后漏斗状衬垫820与衬底802对齐并居中。替代地，漏斗状衬垫820和扣环衬垫819可作为单件形成。
工艺腔室810还可包括顶部工艺衬垫822和底部工艺衬垫824。底部工艺衬垫824设置在底面827上以及顶部工艺衬垫822设置在底部工艺衬垫824和沿着腔室主体802的壁面830上。滑动阀门衬垫826设置为从顶部工艺衬垫822的突出并且工艺区815内。包括漏斗状衬垫820、扣环衬垫819、顶部工艺衬垫822、底部工艺衬垫824和滑动阀门衬垫826的衬垫为绝热材料，诸如熔融石英、蓝宝石、PBN材料、陶瓷及其衍生物或其组合。一般地，该衬垫为应力减小的以防止在本文所述的沉积工艺的启动和冷却循环期间热循环失效。该衬垫能耐约800℃或更高的温度，优选地约1,000℃或更高，更优选地约1,200℃或更高的温度。另外，该衬垫用火焰抛光以获得约为2微英寸(约0.051μm)或更小的表面光洁度。该抛光后的光洁度提供光滑的表面从而以较小或没有湍流的情况输送工艺反应物，同时在该衬垫上使成核位置最小，该成核位置可能不必要地促使薄膜生长在其上。此外，火焰抛光除去表面缺陷(例如：纹孔和裂缝)使热应力引起的裂缝的成核最小。
清洗管829为腔室背面清洗管，该背面清洗管设置在从腔室主体803到腔室盖832和漏斗状衬垫820处。清洗管829用于允许在壁面830和顶部/底部工艺衬垫822和824之间的清洗气流进入工艺区815中。清洗气体源可通过入口804与清洗管829连接。通过清洗管826流过的清洗气体保护壁面830免受可能逸出工艺区815的污染物和过多的热量的影响。污染物包括可能经过顶部/底部工艺衬垫822和824沉积在壁面830上的前驱物或反应产物。此外，来自工艺区815的热量可从顶部/底部工艺衬垫822和824逸出并被吸收进工艺主体803中。然而，流经清洗管826的清洗气流将污染物和热量传送回工艺区815。热节流板809设置在腔室主体803的外部以防止热量从工艺区815损失。
图9B示出了顶部工艺衬垫822、底部工艺衬垫824和滑动阀门衬垫826的示意图。顶部工艺衬垫822和底部工艺衬垫824可包括起模顶针孔821和823以在衬底802的移动期间接收衬底起模顶针(未示出)。顶部工艺衬垫822的底部工艺衬垫824设置在工艺腔室内以使起模顶针孔821与起模顶针孔823对齐。顶部工艺衬垫822还包括接收排气接口831的真空端口835和接收滑动阀门衬垫826的狭缝阀门端口825。排气接口831设置为通过工艺腔室803和真空端口835，从而工艺区815流体连通真空系统833。衬底通过滑动阀门衬垫826以进入和离开工艺腔室810。滑动阀门衬垫826也可从热节流板809突出。
抽送功率可通过使用节流槽840控制。节流槽840为在漏斗状衬垫820的底部边缘和衬底支撑基座812的顶部之间形成的空间。节流槽840为环状槽其可根据工艺条件和所需的抽送功率改变。节流槽840通过降低衬底支撑基座810增大或通过提升衬底支撑基座812减小。从工艺腔室810的底部中的抽送端口(未示出)到扩张式管道834中心的抽送传导通过改变节流槽840的距离改变从而控制本文所述的沉积工艺其间的薄膜厚度和均匀性。
图10示出了工艺腔室盖组件1050的示意图，其可用在本文所述的ALD工艺腔室上。在一实例中，盖组件1050可取代工艺腔室810上的盖832和气体输送系统811。在另一实例中，盖组件1050可取代工艺腔室680上的盖732和气体输送装置730。盖组件1050包括设置在盖1030上的阀门歧管支架1030。绝热体1002a和1002b使阀门歧管支架1030与盖1032和在此散失的任何热量隔离。管1020和1022从盖1032穿过提供从外部源或装置到工艺腔内的流体连通。阀门歧管支架1030包括适配器1074、阀门1043a、1043b、1043c和1043d以及阀门1045a、1045b、1045c和1045d。适配器1074支持用在等离子体工艺诸如PE-ALD工艺、预清洁工艺或氮化工艺中的微波设备或远程等离子体设备。阀门1043a、1043b、1043c和1043d与阀门1045a、1045b、1045c和1045d通过阀门歧管支架1030内的管道系统(未示出)连接。前驱物源、清洗气体源和/或载送气体源在沉积工艺期间通过盖组件流体连通工艺腔室。在一实例中，盖组件1050与类似于气体输送系统811内管道系统841的管道系统管道连接。
此处使用的“衬底表面”，指形成在其上实施薄膜工艺的衬底上的任意衬底或材料表面。例如，根据应用，其上可实施工艺的衬底表面根据应用包括诸如硅、硅的氧化物、应变硅、绝缘体上硅(SOI)、碳掺杂硅氧化物、硅的氮化物、掺杂硅、锗、砷化镓、玻璃、蓝宝石的材料，和其它任意诸如金属、金属氮化物、金属合金和其它导电材料。衬底表面上的阻挡层、金属或金属氮化物包括钛、钛氮化物、钨氮化钨、物、钽和钽氮化物。衬底可以具有不同尺寸，诸如200mm或300mm直径晶片以及矩形或正方形平面。此处所述的实施例工艺在许多衬底和表面上沉积含铪的材料。本发明的实施例可使用的衬底包括，但不限于半导体晶片，诸如晶体硅(例如Si<100>或Si<111>、硅氧化物、应变硅、硅锗化物、掺杂或未掺杂的多晶硅、掺杂或未掺杂的晶片和构图的或未构图的晶片。衬底可暴露于预处理工艺以抛光、蚀刻、还原、氧化、羟化、退火和或烘焙该衬底表面。
此处使用的“原子层沉积”或“循环沉积”指两个或多个反应化合物的依次引入以在衬底表面沉积一层材料。该两种、三种或更多的反应化合物可交替地引入工艺腔室的反应区中。一般地，每个反应性化合物通过延时分开以允许每个化合物在该衬底表面吸附和/或反应。一方面，第一前驱物或化合物A脉冲进入反应区接着第一延时。接着，第二前驱物或化合物B脉冲进入反应区接着第二延时。每个延时期间，清洗气体诸如氮气进入工艺腔室清洗反应区或从反应区以其它方式除去任何残留的反应化合物或副产品。替代地，该清洗气体可在整个沉积工艺中连续地流动从而在反应化合物的脉冲之间的延时期间只有清洗气体流动。该反应化合物交替地脉冲直到在衬底表面上形成所需的薄膜或薄膜厚度。或者一种情况，脉冲化合物A、清洗气体、脉冲化合物B和清洗气体的ALD工艺为一个循环。循环可用化合物A或化合物B开始接着继续循环的每个指令直到获得所需的厚度的薄膜。在另一实施例中，含有化合物A的第一前驱物，含有化合物B的第二前驱物和含有化合物C的第三前驱物每个独立地脉冲进入工艺腔室。替代地，第一前驱物脉冲可在时间上与第二前驱物脉冲重叠，而第三前驱物脉冲在时间上不与第一和第二前驱物脉冲其中之一重叠。
实施例
在实施例1-10期间，ALD工艺维持在从约70℃到1,000℃的温度范围，优选地从约100℃到650℃，例如约350℃。ALD工艺可以在从约0.1Torr到约100Torr的气压范围的工艺腔室中进行，优选地从约1Torr到约10Torr。载送气体(例如N2)可具有从约2slm到22slm的流速，优选地约10slm。含有水蒸汽的氧化气体由含有金属催化剂的水蒸汽发生器(WVG)系统产生，该系统可从位于California，Santa Clara的Fujikin of America，Inc购买到。该WVG系统从氢源气体和氧源气体形成氧化气体。在预处理工艺期间衬底暴露在含有来自WVG系统的水蒸汽的氧化气体中。该预处理工艺进行的时间范围约从5秒到约30秒。沉积的材料形成的厚度范围从约2到约1,000，优选地从约5到约100，和更优选地从约10到50。
实施例1-在ALD工艺期间通过连续脉冲具有由WVG系统产生的氧化气体的铪前驱物形成铪氧化物薄膜。衬底表面暴露在预处理工艺中以在其上形成羟基基团。铪前驱物，HfCl4在前驱物安瓿内在约150℃到约200℃的温度范围加热。氮气载送气体以流速约为400sccm导入含有铪前驱物的前驱物安瓿内。铪前驱物使载送气体饱和并且提供在腔室内约3秒。氮气清洗气体提供到腔室中约2.5秒以除去任何未结合的铪前驱物。氢气和氧气分别以流速约100sccm和约120sccm供给WVG系统。来自WVG系统的氧化气体含有速率约为100sccm的水和速率约为70sccm的氧气。该氧化气体提供给腔室约1.7秒。氮气清洗气体提供给腔室约2.5秒以除去任意未结合的或未反应的反应物，诸如副产品、铪前驱物、氧气和或水或诸如HCl的任意副产品。每个ALD循环形成约1的铪氧化物薄膜。
实例2-在ALD工艺期间通过连续脉冲具有氧化气体的铪前驱物形成铪氧化物薄膜。衬底表面暴露在预处理工艺中以在其上形成羟基基团。铪前驱物，HfCl4在前驱物安瓿内在从约150℃到约200℃的温度范围加热。氮气载送气体以流速约为400sccm导入含有铪前驱物的前驱物安瓿内。铪前驱物使载送气体饱和并提供给腔室约0.5秒。氮气清洗气体提供给腔室约0.5秒以除去任意未结合的铪前驱物。氢源气体和氧化气体分别以流速50sccm和约60sccm供给WVG系统。来自WVG系统的氧化气体含有流速约为50sccm的水和流速约为35sccm的氧气。氧化气体提供给腔室约0.5秒。氮气清洗气体提供腔室约0.5秒以除去任何未结合或未反应的反应物，诸如铪前驱物、氧气和或水或诸如HCl的任意副产品。每个ALD循环形成约2.5的铪氧化物薄膜。
实例3-在ALD工艺期间通过连续脉冲具有氧化气体的铪前驱物、接着脉冲具有氧化气体的硅前驱物形成硅酸铪薄膜。衬底表面暴露在预处理工艺中以在其上形成羟基基团。铪前驱物，TDEAH和硅前驱物，TDMAS在前驱物安瓿内在室温下(约23℃)加热。这些前驱物分别在蒸发器中在约110℃到约130℃时蒸发，并分别与不活泼载送气体混合。铪前驱物使载送气体饱和并提供给腔室约1秒钟。氮气清洗气体提供给腔室约1秒以除去任何未结合的铪前驱物。氢气和氧气分别以流速约100sccm和约120sccm供给WVG系统。来自WVG系统的氧化气体含有流速约为100sccm的水和含有流速约为70sccm的氧气。氧化气体供给腔室约1.7秒。氮气清洗气体提供给腔室约5秒以除去任何未结合或未反应的反应物，诸如铪前驱物、氧气和/或水或副产品。硅前驱物供给腔室约1秒。氮气清洗气体供给腔室约1秒以除去任何未结合的前驱物或污染物。氧化气体供给腔室约1.7秒。氮气清洗气体供给腔室约5秒。每个ALD循环形成约1的硅酸铪薄膜。
实例4-在工艺期间通过连续脉冲具有氧化气体的铪前驱物接着脉冲具有氧化气体的硅前驱物形成硅酸铪薄膜。衬底表面暴露在预处理工艺中以在其上形成羟基基团。铪前驱物HfCl4和硅前驱物Tris-DMAS在分别的前驱物安瓿内在室温(约23℃)下加热。这些前驱物在蒸发器中在约110℃到约130℃时各自蒸发，并分别与不活泼载送气体混合。铪前驱物使载送气体饱和并供给腔室约1秒钟。氮气清洗气体供给腔室约1秒。氢气和氧气分别以流速约100sccm和约120sccm供给WVG系统。来自WVG系统的氧化气体含有流速约为100sccm的水和流速约为70sccm的氧气。氧化气体供给腔室约1.7秒。氮气清洗气体供给腔室约1秒以除去任何未结合或未反应的反应物，诸如铪前驱物、氧气和/或水。硅前驱物提供给腔室约1秒。氮气清洗气体供给腔室约1秒以除去任何未结合的前驱物或污染物。氧化气体为进入腔室的前驱物约1.7秒。氮气清洗气体为进入腔室的前驱物约5秒。每个ALD循环形成约1的硅酸铪薄膜。
实例5-在ALD工艺期间通过同时连续脉冲具有氧化气体的铪前驱物和硅前驱物形成硅酸铪薄膜。衬底表面暴露在硅前驱物中以在其上形成羟基基团。铪前驱物TDEAH和硅前驱物TDMAS在分别的前驱物安瓿内在室温下(约23℃)加热。这些前驱物在蒸发器中分别在约110℃到约130℃蒸发并分别与不活泼载送气体混合。该铪前驱物和硅前驱物每个同时供给腔室约1秒。氮气清洗气体供给腔室约1秒以除去任何未结合的铪或硅前驱物。氢气和氧气分别以流速约100sccm和约120sccm供给WVG系统。来自WVG系统的氧化气体含有流速约100sccm的水和流速约70sccm的氧气。氧化气体供给腔室约1.7秒。氮气清洗气体供给腔室约5秒以除去任何未结合或未反应的反应物，诸如副产品、铪前驱物、硅前驱物、氧气和/或水。每个ALD循环形成约1的硅酸铪薄膜。
实例6-在ALD工艺期间通过同时连续脉冲具有氧化气体的铪前驱物和硅前驱物形成硅酸铪薄膜。衬底表面暴露在硅前驱物中以在其上形成羟基基团。铪前驱物HfCl4和硅前驱物Tris-DMAS在分别的前驱物安瓿内在室温下(约23℃)加热。这些前驱物在蒸发器中分别在约110℃到约130℃蒸发并分别与不活泼载送气体混合。铪前驱物和硅前驱物每个同时供给腔室约1秒。氮气清洗气体供给腔室约1秒以除去任何未结合的铪或硅前驱物。氢气和氧气分别以流速约100sccm和约120sccm供给WVG系统。来自WVG系统的氧化气体含有流速约100sccm的水和流速约70sccm的氧气。氧化气体供给腔室约1.7秒。氮气清洗气体供给腔室约5秒以除去任何未结合或未反应的反应物，诸如副产品、铪前驱物、硅前驱物、氧气和/或水。每个ALD循环形成约1的硅酸铪薄膜。
实例7-在ALD工艺中通过连续脉冲具有从WVG系统形成的原位水蒸汽的铪前驱物形成铪氧化物薄膜。衬底表面暴露在预处理工艺中以在其上形成羟基基团。铪前驱物HfCl4在前驱物安瓿内在从150℃到约200℃加热。氮气载送气体以流速约为400sccm导入到含有铪前驱物的前驱物安瓿内。该铪前驱物使该载送气体饱和并提供给腔室中约1.5秒。氮气清洗气体供给腔室中约2.5秒以除去任何未结合的铪前驱物。每个具有约100sccm流速率的合成气体(5vol％的H2和N2平衡)和氧气供给WVG系统。来自WVG系统的氧化气体含有流速约为2.5sccm的水和流速约为98sccm的氧气。该氧化气体为约在1.7秒内进入腔室中的氧化气体。氮气清洗气体供给腔室约2.5秒以除去任何未结合或未反应的反应物，诸如副产品、铪前驱物、氧气和/或水。
实例8-在ALD工艺期间通过连续脉冲具有氧化气体的铪前驱物，接着脉冲具有氧化气体的硅前驱物形成硅酸铪薄膜。衬底表面暴露在预处理工艺中以在其上形成羟基基团。铪前驱物TDEAH和硅前驱物TDMAS在分别的前驱物安瓿内在室温(约23℃)加热。这些前驱物分别在蒸发器中在约110℃到130℃蒸发并分别用不活泼载送气体混合。该铪前驱物使该载送气体饱和并提供给腔室约1秒。氮气清洗气体提供给腔室约1秒以除去任何未结合的铪前驱物。每个具有流速约100sccm的合成气体(5vol％的H2和N2平衡)和氧气供给WVG系统。来自WVG系统的氧化气体含有流速约为2.5sccm的水和流速约为98sccm的氧气。氧化气体供给腔室约1.7秒。氮气清洗气体供给腔室约5秒以除去任何未结合或未反应的反应物，诸如铪前驱物、氧气和/或水或副产品。硅前驱物提供给腔室约1秒。氮气清洗气体供给腔室约1秒以除去任何未结合的前驱物或污染物。氧化气体提供给腔室约1.7秒。氮气清洗气体提供给腔室约5秒。每个ALD循环形成约1的硅酸铪薄膜。
实例9-在ALD工艺期间通过同时连续脉冲具有氧化气体的铪前驱物和硅前驱物形成硅酸铪薄膜。衬底表面暴露在预处理工艺中以在其上形成羟基基团。铪前驱物TDEAH和硅前驱物TDMAS在分别的前驱物安瓿内在室温(约23℃)加热。这些前驱物分别在蒸发器中在约110℃到约130℃蒸发并分别与不活泼载送气体混合。铪前驱物和硅前驱物每个同时脉冲进入腔室中约1秒。氮气清洗气体供给腔室约1秒以除去任何未结合的铪或硅前驱物。每个具有流速约100sccm的合成气体(0.5vol％的H2和N2平衡)和氧气供给WVG系统。来自WVG系统的氧化气体含有流速约0.25sccm的水和流速约100sccm的氧气。氧化气体供给处理室约1.7秒。氮气清洗气体供给腔室约5秒以除去任何未结合的或未反应的反应物，诸如副产品、铪前驱物、硅前驱物、氧气和/或水。每个ALD循环形成约1的硅酸铪薄膜。
实例10-在ALD工艺期间通过连续脉冲具有由WVG系统产生的氧化气体的铪前驱物形成铪氧化物薄膜。衬底表面暴露在预处理工艺中以在其上形成羟基基团。铪前驱物TDEAH在前驱物安瓿内在约23℃的温度加热。氮气载送气体以流速约为400sccm导入含有铪前驱物的铪前驱物安瓿内。铪前驱物使载送气体饱和并提供给腔室约2秒。氮气清洗气体提供给腔室中约1.5秒以除去任何未结合的铪前驱物。流速约100sccm和约120sccm的氢气和氧气分别供给WVG系统。来自WVG系统的氧化气体含有流速约为100sccm的水和流速约为70sccm的氧气。氧化气体提供给腔室中约1.5秒以除去任何未结合或未反应的反应物，诸如副产品、铪前驱物、氧气和/或水。每个ALD循环形成约1.1的硅酸铪薄膜。
通过以交替的方式分别给出化学物以用选择的半反应实现所需的薄膜组成或者特性沉积材料。然而，上述的半反应不规定所得薄膜的精确键连接或化学计算。虽然在化学反应期间大部分产物成分的化学计算为热动力控制，但是产物成分的化学计算也可以为动力控制的以获得所需的组成。因此，可以顺序给出剂量进行修改以影响薄膜的整个组成和质量。
虽然前文为本发明的实施例的描述，但可以在不脱离本发明的基本范围和以下确定的权利要求范围的情况下，设计本发明的其它和更进一步的实施例。

Claims (30)

1.一种用于在设置在工艺腔室内的衬底上形成含铪材料的方法，包括：
暴露衬底至铪前驱物以在其上形成含铪层；
用清洗气体清洗工艺腔室；
暴露所述衬底至氧化气体以在其上形成铪氧化物材料，其中所述氧化气体含有通过氢源气体和氧源气体流经水蒸汽发生器所形成的水蒸汽；以及
用清洗气体清洗工艺腔室。
2.根据权利要求1所述的方法，其特征在于，所述氢源气体含有氢气。
3.根据权利要求2所述的方法，其特征在于，所述氧源气体含有选自氧、氮的氧化物及其组合的含氧化合物。
4.根据权利要求3所述的方法，其特征在于，所述含氧化合物以比所述氢气更快的速率流入水蒸汽发生器。
5.根据权利要求4所述的方法，其特征在于，所述氧化气体还含有氧气。
6.根据权利要求2所述的方法，其特征在于，所述氢源气体为合成气体。
7.根据权利要求6所述的方法，其特征在于，所述合成气体具有浓度范围从约1vol％至约30vol％的氢气。
8.根据权利要求1所述的方法，其特征在于，在暴露所述衬底至铪前驱物之前，所述衬底暴露至含有氧化气体的浸工艺中从约5秒至约30秒的时间周期。
9.根据权利要求1所述的方法，其特征在于，还包括通过下述步骤在铪氧化物材料上沉积硅氧化物：
暴露所述衬底至硅前驱物以在其上形成含硅层；
用清洗气体清洗工艺腔室；
暴露所述衬底至氧化气体以在其上形成硅氧化物材料；以及
用清洗气体清洗腔室。
10.一种用于在原子层沉积工艺期间在衬底上沉积含铪材料的方法，包括：
将衬底设置在工艺腔室内；
向水蒸汽发生器中流入氢源气体和氧源气体以产生含有水蒸汽的氧化气体；以及
将衬底连续暴露至氧化气体和含有铪前驱物的工艺气体以在衬底上形成含铪材料。
11.根据权利要求10所述的方法，其特征在于，所述氢源气体含有氢气。
12.根据权利要求11所述的方法，其特征在于，所述氧源气体含有选自氧、氮的氧化物及其组合的含氧化合物。
13.根据权利要求12所述的方法，其特征在于，所述含氧化合物以比所述氢气更快的速率流入水蒸汽发生器。
14.根据权利要求13所述的方法，其特征在于，所述氧化气体还含有氧气。
15.根据权利要求11所述的方法，其特征在于，所述氢源气体为合成气体。
16.根据权利要求15所述的方法，其特征在于，所述合成气体具有浓度范围从约1vol％至约30vol％的氢气。
17.根据权利要求10所述的方法，其特征在于，所述含铪材料选自铪氧化物、硅酸铪、铪硅氮氧化物、铪氮氧化物、铝酸铪、其衍生物以及它们的组合。
18.根据权利要求17所述的方法，其特征在于，所述工艺气体还含有硅前驱物或者铝前驱物。
19.根据权利要求10所述的方法，其特征在于，在形成含铪材料之前，所述衬底暴露至含有氧化气体的浸工艺中从约5秒至约30秒的时间周期。
20.一种用于在原子沉积工艺期间在衬底上形成介电材料，包括：
将衬底设置在工艺腔室内；
向水蒸汽发生器流入氢源气体和氧源气体以形成含有水蒸汽的氧化气体；以及
将衬底连续暴露至氧化气体和至少一前驱物的工艺气体以在衬底上形成介电材料。
21.根据权利要求20所述的方法，其特征在于，所述至少一前驱物选自铪前驱物、锆前驱物、硅前驱物、铝前驱物、钽前驱物、钛前驱物、镧前驱物以及它们的组合。
22.根据权利要求21所述的方法，其特征在于，所述介电材料含有选自下述材料中至少一材料：铪氧化物、硅酸铪、锆氧化物、硅酸锆、镧氧化物、硅酸镧、钽氧化物、硅酸钽、钛氧化物、硅酸钛、铝氧化物、硅酸铝、硅氧化物、其衍生物以及它们的组合。
23.根据权利要求20所述的方法，其特征在于，在形成介电材料之前，所述衬底暴露至含有氧化气体的浸工艺中从约5秒至约30秒的时间周期。
24.一种用于在原子层沉积工艺期间在衬底上形成硅酸铪材料的方法，包括：
将衬底设置在工艺腔室内；
向水蒸汽发生器流入氢源气体和氧源气体以形成含有水蒸汽的氧化气体；以及
将衬底连续暴露至氧化气体和含有铪前驱物和硅前驱物的工艺气体以在衬底上形成硅酸铪材料。
25.根据权利要求24所述的方法，其特征在于，所述工艺气体是通过在工艺腔室内组合含有铪前驱物的第一气体和含有硅前驱物的第二气体形成的。
26.根据权利要求24所述的方法，其特征在于，所述工艺气体是通过蒸发含有铪前驱物和硅前驱物的反应物混合物形成的。
27.一种用于在工艺腔室内在衬底上形成含铪介电层叠的方法，包括：
向水蒸汽发生器流入氢源气体和氧源气体以形成含有水蒸汽的氧化气体；以及
在衬底上形成至少一铪氧化物层和至少一硅酸铪层，该步骤包括：
将衬底连续暴露至氧化气体和含有铪前驱物的第一工艺气体以在衬底上形成第一含铪材料；以及
将衬底连续暴露至氧化气体和含有铪前驱物的第二工艺气体以在所述第一含铪材料上形成第二含铪材料。
28.根据权利要求27所述的方法，其特征在于，所述第一工艺气体还含有硅前驱物。
29.根据权利要求27所述的方法，其特征在于，所述第二工艺气体还含有硅前驱物。
30.根据权利要求28所述的方法，其特征在于，在形成所述第一含铪材料之前，该衬底暴露至含有氧化气体的浸工艺从约5秒至约30秒的时间周期。
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