CN1933939A - 包含疏水区及终点检测口的抛光垫 - Google Patents
包含疏水区及终点检测口的抛光垫 Download PDFInfo
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- CN1933939A CN1933939A CNA2005800083535A CN200580008353A CN1933939A CN 1933939 A CN1933939 A CN 1933939A CN A2005800083535 A CNA2005800083535 A CN A2005800083535A CN 200580008353 A CN200580008353 A CN 200580008353A CN 1933939 A CN1933939 A CN 1933939A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
本发明提供一种包含抛光层(10)的化学机械抛光垫，该抛光层(10)包含疏水区(30)、亲水区(40)及终点检测口(20)。该疏水区实质上与该终点检测口(80)相邻。该疏水区(30)包含具有表面能为34mN/m或更小的聚合材料及具有表面能超过34mN/m的聚合材料。本发明进一步提供一种抛光基材的方法，包括使用该抛光垫。
Description
技术领域
本发明涉及包含终点检测口及与其邻接的疏水区的化学机械抛光垫。
背景技术
化学机械抛光(″CMP″)法用于微电子装置的制造以在半导体晶片、场致发射显示器及许多其它微电子基材上形成平坦表面。例如，半导体装置的制造通常包括形成各种加工层(process layer)、选择性的除去或图案化这些层的部分、及在半导体基材表面上沉积额外的加工层以形成半导体晶片。加工层可包括，例如，绝缘层、栅氧化层、导电层及金属或玻璃层等。通常希望在晶片加工的特定步骤中，加工层的最上表面为平面，即平坦的，用于后续层的沉积。CMP用以平面化加工层，其中沉积的材料如导电或绝缘材料被抛光以平面化晶片，用于后续加工步骤。
在典型CMP法中，晶片倒转安装在CMP工具的托架(carrier)上。力量推动托架和晶片向下朝向抛光垫。托架与晶片在CMP工具抛光台上的旋转抛光垫上方旋转。抛光组合物(亦称为抛光浆料)通常在抛光过程时导入在旋转晶片与旋转抛光垫之间。抛光组合物通常包含与最上晶片层的部分互相作用或使其溶解的化学物及以物理方式移除部份层的研磨材料。晶片与抛光垫可以相同方向或相反方向旋转，其任何一个对于进行的特定抛光过程都是期望的。托架亦可跨越抛光台上的抛光垫振荡。
在抛光晶片的表面时，通常有利的是原位监控抛光过程。原位监控抛光过程的一种方法涉及使用具有孔或窗的抛光垫。孔或窗提供光线可通过的入口以便在抛光过程中检查晶片表面。具有孔及窗的抛光垫为已知的并用以抛光基材，例如，半导体装置的表面。例如，美国专利5,605,760提供一种由不具吸收或输送浆料的固有能力的固态均匀聚合物形成的具有透明窗的垫。美国专利5,433,651公开了一种抛光垫，其中移除一部份垫以提供可通过光的孔。美国专利5,893,796及5,964,643公开了移除一部份抛光垫以提供孔且放置透明聚氨酯或石英栓塞于孔内以提供透明窗，或移除一部份抛光垫的背衬以提供在垫中的半透明度。美国专利6,171,181及6,387,312公开了一种在快速冷却速率下由固化可流动材料(例如，聚氨酯)形成的具有透明区的抛光垫。
在化学机械抛光时通常遭遇的一个问题为来自抛光组合物的研磨颗粒趋向于粘附或刮擦抛光垫窗的表面。在抛光垫上刮痕或抛光组合物的存在会妨碍光线透射过窗，因而降低光学终点检测法的灵敏度。使窗从抛光垫表面凹陷可减少窗的刮痕量。然而，此凹陷还提供抛光组合物可流入并被捕获的空腔。美国专利6,254,459建议用疏浆料性材料涂布窗的第一表面。同样，美国专利6,395,130建议使用疏水光管及窗以抗拒抛光组合物堆积其上。美国专利申请公开2003/0129931 A1类似建议在防污树脂如含有聚硅氧烷片段的基于氟的聚合物中涂布抛光垫窗。
虽然若干上述抛光垫适于其预期的目的，但仍需其它提供与有效光学终点检测结合的有效平面化的抛光垫，特别在基材的化学机械抛光中。此外，还需要具有令人满意特性如抛光效率、跨越抛光垫和在抛光垫内的浆料流动、对腐蚀性蚀刻剂的抗性和/或抛光均匀性的抛光垫。最后，需要可使用相对低成本方法制造且在使用前需要很少调节或不用调节的抛光垫。
本发明提供这种抛光垫。本发明的这些及其它优点以及附加的本发明特性由本文提供的本发明说明当可更加明白。
发明内容
本发明提供一种包含抛光层的化学机械抛光垫，该抛光层包含疏水区、亲水区及终点检测口，其中疏水区实质上邻接终点检测口，且其中疏水区包含具有表面能为34mN/m或更小的聚合材料及亲水区包含具有表面能超过34mN/m的聚合材料。本发明进一步提供一种抛光基材的方法，其包括(i)提供欲抛光的工件，(ii)将工件接触包含本发明抛光垫基材的化学机械抛光系统，及(iii)用抛光系统研磨至少一部分工件的表面以抛光工件。
附图说明
图1为俯视图，说明具有抛光层(10)、终点检测口(20)、疏水区(30)及亲水区(40)的本发明抛光垫。
图2为俯视图，说明具有抛光层(10)、终点检测口(20)、疏水区(30)及亲水区(40)的本发明抛光垫。
图3为俯视图，说明具有抛光层(10)、终点检测口(20)、多个同心疏水区(30)及亲水区(40)的本发明抛光垫。
图4为俯视图，说明具有抛光层(10)、终点检测口(20)、多个同心疏水区(30)及亲水区(40)的本发明抛光垫。
具体实施方式
本发明涉及一种包含抛光层的化学机械抛光垫，该抛光层包含疏水区、亲水区及终点检测口。疏水区实质上邻接终点检测口。期望地，疏水区完全围绕终点检测口。虽然不受任何理论所限制，据信疏水区邻接或围绕终点检测口的存在可降低残留在终点检测口上或之内的抛光组合物的量。
疏水区可具有任何适当形状。例如，疏水区可具有选自直线、弧形、圆形、环形、方形、椭圆形、半圆形、三角形、交叉影线及其组合的形状。疏水区的尺寸可为任何适当尺寸。通常，疏水区由抛光层表面的50％或更小(例如，40％或更小或30％或更小)组成。
图1说明本发明的抛光垫，其包含抛光层(10)、终点检测窗(20)、由在抛光层(10)周边周围的环所组成的疏水区(30)及配置在疏水区(30)内的亲水区(40)。图2说明本发明的抛光垫，其包含抛光层(10)、终点检测口(20)及完全围绕终点检测口(20)的疏水区(30)。
在一个实施方式中，疏水区及亲水区呈现交替同心形状的形式。优选地，抛光层包含多个交替的疏水与亲水同心形状。同心形状可具有任何适当形状。例如，同心形状可选自圆形、椭圆形、方形、矩形、三角形、弧形、及其组成。优选地，同心形状可选自圆形、椭圆形、弧形、及其组合。
图3说明本发明的抛光垫，其包括抛光层(10)、终点检测口(20)、及交替疏水(30)及亲水(40)同心圆。期望地，交替的疏水及亲水同心形状完全围绕终点检测口。图4说明本发明的抛光垫，其包括抛光层(10)及被疏水材料(30)及亲水材料(40)的交替弧形围绕的终点检测口(20)。
疏水区包含具有表面能为34mN/m或更小的聚合材料。通常，疏水聚合材料选自聚对苯二甲酸乙二醇酯、含氟聚合物、聚苯乙烯、聚丙烯、聚硅氧烷、硅橡胶、聚碳酸酯、聚丁二烯、聚乙烯、丙烯腈丁二烯苯乙烯共聚物、碳氟化合物、聚四氟乙烯及其组合。优选地，疏水聚合材料选自聚对苯二甲酸乙二醇酯、聚碳酸酯或其组合。
亲水区包含具有表面能超过34mN/m的聚合材料。通常，亲水聚合材料选自热塑性聚合物、热固性聚合物及其组合。优选地，亲水聚合材料为热塑性聚合物或热固性聚合物，其选自聚氨酯、聚乙烯醇、聚醋酸乙烯酯、聚氯乙烯、聚偏二氯乙烯、聚碳酸酯、聚丙烯酸、聚丙烯酰胺、尼龙、聚酯、聚醚、聚酰胺、聚酰亚胺、聚醚醚酮、其共聚物及其混合物。更优选地，亲水聚合材料为聚氨酯。
终点检测口的存在使得抛光垫能与原位CMP加工监控技术结合使用。终点检测口可包含孔、光学透射材料或其组合。优选地，终点检测口包含光学透射材料。通常，光学透射材料在190nm至10,000nm(例如，190nm至3500nm，200nm至1000nm或200nm至780nm)的一个或多个波长下具有透光率为10％或更大(例如，20％或更大，或30％或更大，或40％或更大)。
光学透射材料可为任何适当材料，其中许多为本领域已知的。例如，光学透射材料可由插入抛光垫的孔的玻璃或基于聚合物的栓塞组成或可包含用于抛光垫的其余部分的相同聚合材料。光学透射材料可通过任何适当的方式固定至抛光垫。例如，光学透射材料可不使用粘合剂而固定至抛光层，例如通过焊接。
光学透射材料任选地进一步包含染料，其使抛光材料能选择性透射特定波长的光线。染料用以过滤出不希望波长的光(例如，背景光线)，并因而改善检测的信号噪声比。光学透射材料可包含任何适当染料或可包含染料的组合。适当染料包括聚甲川染料、二-及三-芳基次甲基染料、二芳基次甲基染料的氮杂类似物、氮杂(18)轮烯染料、天然染料、硝基染料、亚硝基染料、偶氮染料、蒽醌染料、硫染料等。期望地，染料的透射谱与用于原位终点检测的光波长匹配或重叠。例如，当用于终点检测(EPD)系统的光源为HeNe激光器(其产生具有波长为633nm的可见光)时，染料优选为红色染料，其可透射具有波长为633nm的光。
终点检测口可具有任何适当的尺度(即，长度、宽度及厚度)及任何适当形状(圆形、椭圆形、方形、矩形、三角形等)。终点检测口可与排放通道组合使用，该排放通道用于最小化或消除抛光表面的过量抛光组合物。光学终点检测口可与抛光垫的抛光表面对齐或可自抛光垫的抛光表面凹陷。优选地，光学终点检测口自抛光垫的表面凹陷。
抛光垫任选地包含引入抛光层内的颗粒。优选地，颗粒分散在整个抛光层中。颗粒通常选自研磨颗粒、聚合物颗粒、复合颗粒(例如，包胶(encapsulated)颗粒)、有机颗粒、无机颗粒、澄清(clarifying)颗粒及其混合物。
研磨颗粒可具有任何适当材料。例如，研磨颗粒可包含金属氧化物，如选自氧化硅、氧化铝、氧化铈、氧化锆、氧化铬、氧化钛、氧化锗、氧化镁、氧化铁、其共形成产物及其组合的金属氧化物，或碳化硅、氮化硼、钻石、石榴石或陶瓷研磨材料。研磨颗粒可为金属氧化物与陶瓷的混杂物或无机与有机材料的混杂物。颗粒亦可为聚合物颗粒，其许多叙述于美国专利5,314,512中，例如聚苯乙烯颗粒、聚甲基丙烯酸甲酯颗粒、液晶聚合物(LCP，例如，得自Ciba Geigy的Vectra聚合物)、聚醚醚酮(PEEK’s)、粒状热塑性聚合物(例如，粒状热塑性聚氨酯)、粒状交联聚合物(例如，粒状交联聚氨酯或聚环氧化物)或其组合。期望地，聚合物颗粒具有的熔点高于亲水和/或疏水区的聚合物树脂的熔点。复合颗粒可为包含核及外层的任意适当的颗粒。例如，复合颗粒可包含固体核(例如，金属氧化物、金属、陶瓷或聚合物)及聚合壳(例如，聚氨酯、尼龙或聚乙烯)。澄清颗粒可为页硅酸盐(例如，云母如氟化云母及粘土如滑石、高岭石、蒙脱石、锂蒙脱石)、玻璃纤维、玻璃珠、钻石颗粒、碳纤维等。
抛光垫任选地包含引入垫主体的可溶性颗粒。当存在时，可溶性颗粒优选分散在整个抛光垫中。该可溶性颗粒在化学机械抛光期间部分或完全溶解于抛光组合物的液态载体内。通常，可溶性颗粒为水溶性颗粒。例如，可溶性颗粒可为任何适当水溶性颗粒，例如选自糊精、环糊精、甘露醇、乳糖、羟丙基纤维素、甲基纤维素、淀粉、蛋白质、无定形非交联聚乙烯醇、无定形非交联聚乙烯吡咯烷酮、聚丙烯酸、聚环氧乙烷、水溶性感光树脂、磺化聚异戊二烯、和磺化聚异戊二烯共聚物的有机水溶性颗粒。可溶性颗粒也可为选自醋酸钾、硝酸钾、碳酸钾、碳酸氢钾、氯化钾、溴化钾、磷酸钾、硝酸镁、碳酸钙及苯甲酸钠无机水溶性颗粒材料。当可溶性颗粒溶解时，抛光垫可留有对应可溶性颗粒尺寸的开孔。
颗粒优选在形成发泡抛光基材前与聚合物树脂共混。引入抛光垫内的颗粒可具有任何适当的尺度(例如，直径、长度或宽度)或形状(例如，球形、椭圆形)并可以任何适当量引入抛光垫内。例如，颗粒可具有颗粒尺度(例如，直径、长度或宽度)为1nm或更大和/或2mm或更小(例如，0.5μm至2mm直径)。优选地，颗粒具有尺度为10nm或更大和/或500μm或更小(例如，100nm至10μm直径)。颗粒还可共价地键合至聚合材料。
抛光垫任选地包含引入垫主体的固体催化剂。当存在时，固体催化剂优选分散在整个聚合材料中。催化剂可为金属、非金属、或其组合。优选地，催化剂选自具有多重氧化状态的金属化合物，例如，但不限于包含Ag、Co、Ce、Cr、Cu、Fe、Mo、Mn、Nb、Os、Pd、Ru、Sn、Ti及V的金属化合物。
抛光垫可具有任何适当的尺度。通常，抛光垫为圆形(如用于旋转抛光工具中)或产生为成环线型带(如用于线性抛光工具)。
抛光垫包括抛光表面，其任选地进一步包含凹槽、通道和/或穿孔，这有利于抛光组合物的横向输送穿过抛光垫的表面。该凹槽、通道或穿孔可呈现任何适当图案并可具有任何适当深度及宽度。抛光垫可具有二种或多种不同凹槽图案，例如，如美国专利5,489,233所述的大凹槽与小凹槽的组合。凹槽可为倾斜凹槽、同心凹槽、螺旋或圆形凹槽、XY交叉影线图案的形式，并可连续或非连续的连通。优选地，抛光垫至少包含由标准垫调节法产生的小凹槽。
抛光垫可单独使用或任选地可用作多层堆叠的抛光垫的一层。例如，抛光垫可与实质上与抛光层共同扩张的副垫(subpad)层结合使用。副垫可为任何适当副垫。适当副垫包括聚氨酯泡沫副垫(例如，软交联聚氨酯副垫)、浸渍毡副垫、多微孔聚氨酯副垫或烧结氨基甲酸酯副垫。副垫通常比本发明的抛光垫软，且因而比本发明的抛光垫更可压缩并具有更低的肖氏(Shore)硬度值。例如，副垫可具有肖氏A硬度为35至50。在一些实施方式中，副垫比抛光垫硬、可压缩性小并具有更高的肖氏硬度。副垫任选地包含凹槽、通道、中空段、窗、孔等。当本发明的抛光垫与副垫组合使用时，通常有中间衬里层，例如，聚对苯二甲酸乙二醇酯膜，其与抛光垫及副垫共同扩张并在其之间。或者，抛光垫可用作与传统抛光垫一起的副垫。
在一些实施方式中，副垫层包括光学终点检测口，其基本上与抛光层的光学终点检测口对齐。当有副垫层时，抛光层的光学终点检测口期望包含光学透射材料，而副垫层的光学终点检测口包含孔。或者，抛光层的光学终点检测口可包含孔，而副垫层的光学终点检测口包含光学透射材料。
抛光垫特别适合与化学机械抛光(CMP)装置组合使用。通常，该装置包含当使用时运动并具有由轨道、线性或圆周运动产生的速度的台板，当运动时与台板接触并与台板一起运动的本发明的抛光垫，和通过相对于用于接触欲抛光的基材的抛光垫表面接触并运动而保持欲抛光的基材的托架。基材的抛光通过放置基材接触抛光垫，然后抛光垫相对于基材移动，通常在其之间具有抛光组合物，以研磨至少一部分基材来抛光基材而进行。CMP装置可为任何适当CMP装置，其中许多为本领域已知的。抛光垫也可与线性抛光工具一起使用。
期望地，CMP装置进一步包含原位抛光终点检测系统，其中许多为本领域已知的。通过分析从工件表面反射的光线或其它辐射检查并监控抛光过程的技术为本领域已知的。这种方法叙述于，例如，美国专利5,196,353、美国专利5,433,651、美国专利5,609,511、美国专利5,643,046、美国专利5,658,183、美国专利5,730,642、美国专利5,838,447、美国专利5,872,633、美国专利5,893,796、美国专利5,949,927及美国专利5,964,643中。期望地，对欲抛光的工件的抛光过程的进展的检查或监控使得能确定抛光终点，即，对特定工件确定终止抛光过程的时间。
抛光垫适用于抛光许多类型的基材和基底材料。例如，抛光垫可用以抛光各种基材，包括记忆储存装置、半导体基材及玻璃基材。用抛光垫抛光的适当基材包括存储磁盘、硬磁盘、磁头、MEMS装置、半导体晶片、场致发射显示器及其它微电子基材，尤其是包含绝缘层(例如，二氧化硅、氮化硅或低介电质材料)和/或含金属层(例如，铜、钽、钨、铝、镍、钛、铂、钌、铑、铱或其它贵金属)的基材。
Claims (23)
1.一种包含抛光层的化学机械抛光垫，该抛光层包括疏水区、亲水区及终点检测口，其中该疏水区实质上邻接终点检测口，且其中该疏水区包含具有表面能为34mN/m或更小的聚合材料及该亲水区包含具有表面能超过34mN/m的聚合材料。
2.权利要求1的抛光垫，其中该疏水区由在抛光垫周边周围的的环组成。
3.权利要求1的抛光垫，其中该疏水区与该亲水区为交替的同心形状的形式。
4.权利要求1的抛光垫，其中该抛光层包含多个交替的疏水及亲水同心形状。
5.权利要求4的抛光垫，其中该交替的疏水及亲水同心形状完全围绕终点检测口。
6.权利要求1的抛光垫，其中该疏水区完全围绕终点检测口。
7.权利要求1的抛光垫，其中该疏水区包括选自聚对苯二甲酸乙二醇酯、含氟聚合物、聚苯乙烯、聚丙烯、聚硅氧烷、硅橡胶、聚碳酸酯、聚丁二烯、聚乙烯、丙烯腈丁二烯苯乙烯共聚物、碳氟化合物、聚四氟乙烯及其组合的聚合材料。
8.权利要求1的抛光垫，其中该亲水区包括选自热塑性聚合物、热固性聚合物及其组合的聚合材料。
9.权利要求8的抛光垫，其中该热塑性聚合物或该热固性聚合物选自聚氨酯、聚乙烯醇、聚醋酸乙烯酯、聚氯乙烯、聚偏二氯乙烯、聚碳酸酯、聚丙烯酸、聚丙烯酰胺、尼龙、聚酯、聚醚、聚酰胺、聚酰亚胺、聚醚醚酮、其共聚物及其混合物。
10.权利要求8的抛光垫，其中该聚合物为聚氨酯。
11.权利要求1的抛光垫，其中该终点检测口包括孔。
12.权利要求1的抛光垫，其中该终点检测口包括光学透射材料。
13.权利要求12的抛光垫，其中该光学透射材料在190nm至3500nm的一个或多个波长处具有透光率为至少10％。
14.权利要求12的抛光垫，其中该光学透射材料不用粘合剂而固定至抛光层。
15.权利要求1的抛光垫，其中该抛光层进一步包含研磨颗粒。
16.权利要求15的抛光垫，其中该研磨颗粒包括选自氧化铝、氧化硅、氧化钛、氧化铈、氧化锆、氧化锗、氧化镁、其共形成产物及其组合的金属氧化物。
17.权利要求1的抛光垫，其中该抛光层进一步包含具有凹槽的抛光表面。
18.权利要求1的抛光垫，其进一步包含副垫层，该副垫层实质上与该抛光层共同扩张，其中该副垫层包括基本上与该抛光层的光学终点检测口对齐的光学终点检测口。
19.权利要求18的抛光垫，其中该抛光层的光学终点检测口包括光学透射材料，而该副垫层的光学终点检测口包括孔。
20.权利要求18的抛光垫，其中该抛光层的光学终点检测口包括孔，而该副垫层的光学终点检测口包括光学透射材料。
21.权利要求20的抛光垫，其中该抛光层的光学终点检测口包括围绕孔的疏水材料的环。
22.一种抛光基材的方法，包括
(i)提供欲抛光的工件，
(ii)将该工件接触包括权利要求1的抛光垫的化学机械抛光系统，及
(iii)用该抛光系统研磨至少一部分该工件的表面以抛光该工件。
23.权利要求22的方法，其中该方法进一步包括原位检测抛光终点。
Applications Claiming Priority (2)
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| US10/808,827 US7204742B2 (en) | 2004-03-25 | 2004-03-25 | Polishing pad comprising hydrophobic region and endpoint detection port |
| US10/808,827 | 2004-03-25 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104029114A (zh) * | 2013-03-07 | 2014-09-10 | 罗门哈斯电子材料Cmp控股股份有限公司 | 多层化学机械抛光垫 |
| CN104105575A (zh) * | 2011-11-29 | 2014-10-15 | 内克斯普拉纳公司 | 具有基层和抛光表面层的抛光垫 |
| CN104677036A (zh) * | 2008-06-27 | 2015-06-03 | Ssw控股公司 | 溢出物容纳的方法及由此制成的搁板或类似物 |
| CN105228797A (zh) * | 2013-03-14 | 2016-01-06 | 内克斯普拉纳公司 | 具有带具有渐变侧壁的连续突起的抛光表面的抛光垫 |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100741984B1 (ko) | 2006-02-17 | 2007-07-23 | 삼성전자주식회사 | 화학기계적 연마 장치의 연마 패드 및 그의 제조방법 |
| TWI293910B (en) * | 2006-06-20 | 2008-03-01 | Cando Corp | Fixing board and polishing device using the same |
| TWI411495B (zh) * | 2007-08-16 | 2013-10-11 | Cabot Microelectronics Corp | 拋光墊 |
| KR101024674B1 (ko) * | 2007-12-28 | 2011-03-25 | 신한다이아몬드공업 주식회사 | 소수성 절삭공구 및 그제조방법 |
| WO2010138724A1 (en) | 2009-05-27 | 2010-12-02 | Rogers Corporation | Polishing pad, polyurethane layer therefor, and method of polishing a silicon wafer |
| US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
| JP5620141B2 (ja) * | 2010-04-15 | 2014-11-05 | 東洋ゴム工業株式会社 | 研磨パッド |
| US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
| JP2012157936A (ja) * | 2011-02-01 | 2012-08-23 | Fujitsu Semiconductor Ltd | 研磨パッド及び半導体装置の製造方法 |
| US20120302148A1 (en) * | 2011-05-23 | 2012-11-29 | Rajeev Bajaj | Polishing pad with homogeneous body having discrete protrusions thereon |
| JP5875300B2 (ja) * | 2011-09-06 | 2016-03-02 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
| JP5797981B2 (ja) * | 2011-09-06 | 2015-10-21 | 東洋ゴム工業株式会社 | 研磨パッド |
| US9067297B2 (en) | 2011-11-29 | 2015-06-30 | Nexplanar Corporation | Polishing pad with foundation layer and polishing surface layer |
| US9067298B2 (en) | 2011-11-29 | 2015-06-30 | Nexplanar Corporation | Polishing pad with grooved foundation layer and polishing surface layer |
| KR101527390B1 (ko) * | 2011-12-16 | 2015-06-09 | 주식회사리온 | 소수성층이 코팅된 화학적 기계적 연마장치용 멤브레인 |
| US9156125B2 (en) | 2012-04-11 | 2015-10-13 | Cabot Microelectronics Corporation | Polishing pad with light-stable light-transmitting region |
| US9597769B2 (en) | 2012-06-04 | 2017-03-21 | Nexplanar Corporation | Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer |
| KR102059524B1 (ko) * | 2013-02-19 | 2019-12-27 | 삼성전자주식회사 | 화학적 기계적 연마 장치와 연마 헤드 어셈블리 |
| TWI599447B (zh) * | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | 具有偏移同心溝槽圖樣之邊緣排除區的ｃｍｐ拋光墊 |
| US9064806B1 (en) * | 2014-03-28 | 2015-06-23 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | Soft and conditionable chemical mechanical polishing pad with window |
| JP6376341B2 (ja) * | 2014-09-30 | 2018-08-22 | 富士紡ホールディングス株式会社 | 研磨パッド |
| US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| WO2016060712A1 (en) | 2014-10-17 | 2016-04-21 | Applied Materials, Inc. | Cmp pad construction with composite material properties using additive manufacturing processes |
| CN113103145B (zh) * | 2015-10-30 | 2023-04-11 | 应用材料公司 | 形成具有期望ζ电位的抛光制品的设备与方法 |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| WO2017164842A1 (en) * | 2016-03-22 | 2017-09-28 | Intel Corporation | Improved optical metrology for chemical mechanical polish |
| US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
| TWI650202B (zh) * | 2017-08-22 | 2019-02-11 | 智勝科技股份有限公司 | 研磨墊、研磨墊的製造方法及研磨方法 |
| WO2020050932A1 (en) | 2018-09-04 | 2020-03-12 | Applied Materials, Inc. | Formulations for advanced polishing pads |
| KR20210094024A (ko) * | 2018-11-27 | 2021-07-28 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법 |
| US11851570B2 (en) | 2019-04-12 | 2023-12-26 | Applied Materials, Inc. | Anionic polishing pads formed by printing processes |
| US11679469B2 (en) * | 2019-08-23 | 2023-06-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chemical mechanical planarization tool |
| US11628535B2 (en) | 2019-09-26 | 2023-04-18 | Skc Solmics Co., Ltd. | Polishing pad, method for manufacturing polishing pad, and polishing method applying polishing pad |
| US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
| CN117020936B (zh) * | 2023-10-10 | 2023-12-29 | 青禾晶元(天津)半导体材料有限公司 | 一种光催化复合抛光垫及其制备方法与抛光方法 |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US42243A (en) * | 1864-04-05 | Improvement in water-heaters for steam-boilers | ||
| US129931A (en) * | 1872-07-30 | Improvement | ||
| JPH01193166A (ja) | 1988-01-28 | 1989-08-03 | Showa Denko Kk | 半導体ウェハ鏡面研磨用パッド |
| GB9020462D0 (en) | 1990-09-19 | 1990-10-31 | Filters For Industry Ltd | Abrasive segments |
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US6106754A (en) | 1994-11-23 | 2000-08-22 | Rodel Holdings, Inc. | Method of making polishing pads |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US5855804A (en) | 1996-12-06 | 1999-01-05 | Micron Technology, Inc. | Method and apparatus for stopping mechanical and chemical-mechanical planarization of substrates at desired endpoints |
| US6036579A (en) * | 1997-01-13 | 2000-03-14 | Rodel Inc. | Polymeric polishing pad having photolithographically induced surface patterns(s) and methods relating thereto |
| US5944583A (en) | 1997-03-17 | 1999-08-31 | International Business Machines Corporation | Composite polish pad for CMP |
| US6168508B1 (en) * | 1997-08-25 | 2001-01-02 | Lsi Logic Corporation | Polishing pad surface for improved process control |
| US6254456B1 (en) * | 1997-09-26 | 2001-07-03 | Lsi Logic Corporation | Modifying contact areas of a polishing pad to promote uniform removal rates |
| US5990012A (en) | 1998-01-27 | 1999-11-23 | Micron Technology, Inc. | Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads |
| US6068539A (en) | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
| US6585574B1 (en) | 1998-06-02 | 2003-07-01 | Brian Lombardo | Polishing pad with reduced moisture absorption |
| US6395130B1 (en) | 1998-06-08 | 2002-05-28 | Speedfam-Ipec Corporation | Hydrophobic optical endpoint light pipes for chemical mechanical polishing |
| US6832950B2 (en) * | 2002-10-28 | 2004-12-21 | Applied Materials, Inc. | Polishing pad with window |
| US6994607B2 (en) * | 2001-12-28 | 2006-02-07 | Applied Materials, Inc. | Polishing pad with window |
| EP1176630B1 (en) | 1999-03-31 | 2007-06-27 | Nikon Corporation | Polishing body, polisher, method for adjusting polisher, method for measuring thickness of polished film or end point of polishing, method for producing semiconductor device |
| US6439968B1 (en) | 1999-06-30 | 2002-08-27 | Agere Systems Guardian Corp. | Polishing pad having a water-repellant film theron and a method of manufacture therefor |
| US6171181B1 (en) | 1999-08-17 | 2001-01-09 | Rodel Holdings, Inc. | Molded polishing pad having integral window |
| US6524164B1 (en) | 1999-09-14 | 2003-02-25 | Applied Materials, Inc. | Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus |
| JP2003510826A (ja) * | 1999-09-29 | 2003-03-18 | ロデール ホールディングス インコーポレイテッド | 研磨パッド |
| KR100789663B1 (ko) | 2000-03-15 | 2007-12-31 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 연마층에 투명 윈도우 부분을 갖는 연마 패드 |
| US6685537B1 (en) | 2000-06-05 | 2004-02-03 | Speedfam-Ipec Corporation | Polishing pad window for a chemical mechanical polishing tool |
| JP2002001647A (ja) * | 2000-06-19 | 2002-01-08 | Rodel Nitta Co | 研磨パッド |
| US20020016139A1 (en) * | 2000-07-25 | 2002-02-07 | Kazuto Hirokawa | Polishing tool and manufacturing method therefor |
| US6540595B1 (en) | 2000-08-29 | 2003-04-01 | Applied Materials, Inc. | Chemical-Mechanical polishing apparatus and method utilizing an advanceable polishing sheet |
| JP3851135B2 (ja) | 2001-10-17 | 2006-11-29 | ニッタ・ハース株式会社 | 研磨パッド |
| JP2003133270A (ja) | 2001-10-26 | 2003-05-09 | Jsr Corp | 化学機械研磨用窓材及び研磨パッド |
| US7030018B2 (en) * | 2002-02-04 | 2006-04-18 | Kla-Tencor Technologies Corp. | Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool |
| US6776810B1 (en) | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| JP2004261887A (ja) * | 2003-02-28 | 2004-09-24 | Rodel Nitta Co | 研磨パッド、その製造方法および製造装置 |
| JP2004343090A (ja) * | 2003-04-22 | 2004-12-02 | Jsr Corp | 研磨パッドおよび半導体ウェハの研磨方法 |
| KR100541545B1 (ko) * | 2003-06-16 | 2006-01-11 | 삼성전자주식회사 | 화학기계적 연마 장비의 연마 테이블 |
| US6884156B2 (en) * | 2003-06-17 | 2005-04-26 | Cabot Microelectronics Corporation | Multi-layer polishing pad material for CMP |
| US6984163B2 (en) * | 2003-11-25 | 2006-01-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with high optical transmission window |
| US7059936B2 (en) * | 2004-03-23 | 2006-06-13 | Cabot Microelectronics Corporation | Low surface energy CMP pad |
-
2004
- 2004-03-25 US US10/808,827 patent/US7204742B2/en not_active Expired - Fee Related
-
2005
- 2005-03-01 TW TW094105986A patent/TWI275447B/zh not_active IP Right Cessation
- 2005-03-14 JP JP2007505000A patent/JP4856055B2/ja not_active Expired - Fee Related
- 2005-03-14 KR KR1020067019552A patent/KR101195276B1/ko not_active IP Right Cessation
- 2005-03-14 CN CNB2005800083535A patent/CN100493847C/zh not_active Expired - Fee Related
- 2005-03-14 WO PCT/US2005/008410 patent/WO2005099962A1/en active Application Filing
- 2005-03-23 MY MYPI20051262A patent/MY137517A/en unknown
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104677036A (zh) * | 2008-06-27 | 2015-06-03 | Ssw控股公司 | 溢出物容纳的方法及由此制成的搁板或类似物 |
| CN104677036B (zh) * | 2008-06-27 | 2018-02-16 | Ssw控股公司 | 一种搁板及其制造方法 |
| CN104105575A (zh) * | 2011-11-29 | 2014-10-15 | 内克斯普拉纳公司 | 具有基层和抛光表面层的抛光垫 |
| CN105773400A (zh) * | 2011-11-29 | 2016-07-20 | 内克斯普拉纳公司 | 具有基层和抛光表面层的抛光垫 |
| CN104105575B (zh) * | 2011-11-29 | 2017-11-14 | 嘉柏微电子材料股份公司 | 具有基层和抛光表面层的抛光垫 |
| CN104029114A (zh) * | 2013-03-07 | 2014-09-10 | 罗门哈斯电子材料Cmp控股股份有限公司 | 多层化学机械抛光垫 |
| CN105228797A (zh) * | 2013-03-14 | 2016-01-06 | 内克斯普拉纳公司 | 具有带具有渐变侧壁的连续突起的抛光表面的抛光垫 |
| CN105228797B (zh) * | 2013-03-14 | 2018-03-02 | 嘉柏微电子材料股份公司 | 具有带具有渐变侧壁的连续突起的抛光表面的抛光垫 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007530297A (ja) | 2007-11-01 |
| TW200600260A (en) | 2006-01-01 |
| CN100493847C (zh) | 2009-06-03 |
| US7204742B2 (en) | 2007-04-17 |
| MY137517A (en) | 2009-02-27 |
| TWI275447B (en) | 2007-03-11 |
| WO2005099962A1 (en) | 2005-10-27 |
| US20050211376A1 (en) | 2005-09-29 |
| KR101195276B1 (ko) | 2012-10-26 |
| KR20060127219A (ko) | 2006-12-11 |
| JP4856055B2 (ja) | 2012-01-18 |
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