CN1893062A - 制造自装配微结构的方法 - Google Patents

制造自装配微结构的方法 Download PDF

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Publication number
CN1893062A
CN1893062A CNA2006100819051A CN200610081905A CN1893062A CN 1893062 A CN1893062 A CN 1893062A CN A2006100819051 A CNA2006100819051 A CN A2006100819051A CN 200610081905 A CN200610081905 A CN 200610081905A CN 1893062 A CN1893062 A CN 1893062A
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module
substrate
face
gaas
light
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CN100466250C (zh
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约翰·S·史密斯
H·J·J·叶
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University of California
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University of California
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Abstract

一种通过液体传送将微结构组装到衬底上的方法。呈成型模块(19)的微结构自对准到位于衬底(50)上的凹槽区域(55)，使微结构变成与衬底结合起来。所改进的方法包括将成型模块移入液体形成一种悬浮物的步骤，然后将这种悬浮物均匀地倾倒在其上具有凹槽区域的衬底的顶面(53)的上方。通过成型和流体的作用微结构跌落到衬底的表面，自对准并接合到凹槽区域。

Description

制造自装配微结构的方法
本申请是申请日为1994年12月7日、申请号为02156104.4、发明名称为“制造自装配微结构的方法”的中国专利申请的分案申请。
技术领域
本发明涉及电子集成电路领域。本发明以一个将砷化镓微结构制作在硅衬底上的例子进行说明，但应当认为本发明实际上将有更宽的应用范围。仅仅通过例子就可以表明本发明能够用于制作硅基电子器件与诸如发光二极管(LED)、激光器、隧道晶体管、耿氏振荡器、集成电路、太阳能收集器等砷化镓基的微结构(或器件)结合在一起的那种器件。
背景技术
目前，工业上需要一种成本合理、高效且实用的将高成本的微结构组装到廉价的商用衬底的方法。特别是对某些特别的电子和光电应用来说，诸如，砷化镓一类材料比硅材料具有更为优异的性能。然而，在制作砷化镓器件时，砷化镓晶片的大部分区域常常是不用和丢弃的。这种无用区域通常形成对贵重模块区域的无效利用。另外，处理砷化镓一般需要特定的技术、化学工艺和设备，因此是很昂贵的。
其它应用，诸如甚大规模集成电路(VLSI)，制备在硅上比制在砷化镓上更好。在更进一步的应用中，希望生产兼有两类材料特性的集成电路。因此，工业上需要开发一种有效的方法，用以制作与硅基集成电路结合在一起的砷化镓器件。这种方法所制作的结构包括了兼有砷化镓和硅基器件的优点。
一些方法，诸如倒装芯片接合法、剥离(lift off)法以及其它方法，通常需要占用衬底很大的面积，且与微米大小的现有的微结构工艺不兼容。这些方法在将微粒设置在衬底上时通常会有一定的难度。因此，工业上需要开发一种有效的方法，将诸如砷化镓之类较高价格材料的微结构制作在诸如硅之类的廉价衬底上。
工业上利用或已推荐了几种方法来制造个别的电子元件(或通常的微结构)，并将这种结构组装到衬底上。一种方法就是将砷化镓直接生长在硅衬底上。这种方法因砷化镓的晶格结构与硅的失配而受到限制。此外，在硅衬底上生长砷化镓有固有的困难，因此也很昂贵。因此，砷化镓不能有效地生长在硅衬底上。
另一种方法是Yando在第3439416号美国专利所描述的。Yando描述了在磁体阵列上设置、收集或振动的元件或者结构。这种磁体包括磁化层与非磁化层交叠形成的层叠结构。元件匹配到形成其组件的磁体阵列上。然而，在元件的形状、尺寸和分布方面仍存在某些限制。元件宽度必须与磁性层的空间匹配，且元件的分布受制于叠层的平行几何形状。此外，元件的自对准需要有层叠结构。再者，Yando所披露的结构一般具有毫米大小的尺寸，因此，通常与微米尺寸的集成电路结构不兼容。这样，Yando所披露的方法和结构太大、太复杂，不能有效地将现有的微结构或元件组装到衬底上。
另一种方法包括了在封装好的表面镶嵌器件与衬底之间紧密配合的，如Liebes，Jr等人在第5034802号美国专利所述。所述的组装过程需要人力或机械手作实际的搬送、对准以及将厘米尺寸的封装好的表面镶嵌器件安装到衬底上。这种过程因需要人力或机械手而受到限制。人力或机械手将每个封装的器件一个接一个地、并非同时地组装到衬底上，由此限制了效率和操作效能。再者，该方法采用厘米尺寸的器件(或封装的表面安装集成电路)，将很少适用于以芯片形式的微米尺寸的集成电路。
另一种方法，诸如Biegelsen等人在第4542397号美国专利中所述的一种方法，包括将平行四边形形状的结构通过机械振动设置在衬底上。另外，也可以采用脉动空气通过支承面(或衬底)上的小孔的方法。对此种方法的限制包括要有能够振动该结构的装置，或者使脉动空气通过小孔的装置。再者，这种方法依赖于厘米尺寸的芯片，很少适用于现有技术的微米尺寸的结构。
再一种方法，如Akyurek在第4194668号美国专利披露了一种将电极底座(pedestals)对准并焊接到可焊欧姆阳极触点的装置。该阳极触点是位于圆片上的独立半导体芯片的一部分。组装此种结构需要采用将底座撒在掩模上，然后电磁振动这种底座进行对准之类的技术。该方法因需要振动装置完成电磁振动步骤而受到限制。此外，该方法还需要使表面缓慢地倾斜到掩模，将电极底座传送到掩模上。再者，该方法仅仅限于电极底座和硅片，由此限定了该方法应用于这些结构。
另一种方法，如Cohn于1992年6月23日提交的第07/902,986号美国专利申请所述，需要通过静电力将集成电路安装到衬底上。该静电力振动颗粒，使颗粒按最小位能状态排列。对此种方法的限制包括需要提供能用静电力振动颗粒的一种装置。再者，Cohn的方法由于相互之间的机械振动造成一部分集成电路的损坏，而且通常将产生失效的危险。因此，这种方法一般不能同现有微结构技术兼容。
从以上所述可见，人们希望有一种将微结构组装到衬底上的方法，该方法紧凑、廉价、有效、可靠，并且只需要少量的维护即可。
发明内容
本发明涉及一种将微结构组装到衬底的方法以及所形成的结构。尤其涉及包括通过液体将成型块或通常的结构输送到一衬底顶面的方法，该衬底具有凹槽区域或一般的键合部位或接收部。输送时，成型块通过其形状自对准到凹槽区域并集成于上。所形成的结构可以包括大量有用的电子集成电路，包括与以砷化镓基的诸如发光二极管(LED)、激光器、隧道二极管、耿氏振荡器、集成电路、太阳能收集器等微结构结合在一起的硅基电子器件。
在一个特定的实施例中，将提供诸如微米尺寸之模块的微结构组装到一衬底上的方法。该衬底包括其上具有至少一个凹槽区域的顶面，它可以是硅片、砷化镓片、玻璃衬底、陶瓷或其它的类型的衬底。其中，该衬底也可以是通过诸如模压、注塑之类的工艺制成的塑料片。组装步骤包括提供成型模块、将模块输送到液体形成一种混合体或称为悬浮体。然后，以一种将至少一个成型模块设置在凹槽区域内的速率，将这种悬浮体均匀地分送到衬底上方。分送基本上以层流形式进行，允许成型模块的一部分自对准到凹槽区域。
在另一个实施例中，该方法例如根据一种改进的制作过程，提供具有梯形剖面的成型模块。制作包括提供具有顶面的第二衬底，并生成一个牺牲层(sacrificial layer)覆盖该顶面。然后，完成形成一个覆盖该模块层的步骤。放上掩模并蚀刻该模块层直达牺牲层便在其上形成梯形模块。优先蚀刻该牺牲层的步骤剥离每个梯形模块。然后对这种模块进行漂洗并将其输送到形成悬浮体的溶液中。
本发明进一步提供最终与衬底集成在一起的梯形块。该衬底包括多个在其上形成的凹槽区域。每个凹槽区域包括接受一梯形块的成型剖面。所形成的结构具有通过该凹槽区域与衬底集成在一起的这种模块，形成组装器件或集成电路。
在进一步的实施例中，成型模块包含一截顶棱锥体的砷化镓结构。该截顶棱锥体的结构含有底面，及从其底面延伸到顶面的四个侧面。每一个侧面与底面间形成一个约为50度至70度之间的角度。每个侧面高约为5至15微米。底面长约10至50微米，宽约10至50微米之间。仅仅为了说明的目的，所述改进的方法及其所形成的结构仅限于将由砷化镓制成的梯形模块组装到硅衬底上。成型模块也可以包括圆柱形、锥形、矩形、方形、T形、卵形或其它类似形状(对称和非对称的)，以及它们的组合。通常，模块的形状允许该模块紧密地插入到衬底上相同形状的凹槽区域或接收部。其中，成型模块也可以由诸如镓砷化铝、硅、金刚石、锗、其它III-V和II-VI族化合物等材料组成的多层结构。这种多层结构可以包括金属，诸如二氧化硅、氮化硅和类似材料的绝缘体以及它们的组合。
通过参见说明书的其余部分和附图，将进一步清楚理解本发明性质和优点。
附图说明
图1表示在本发明的改进的制造方法中使用的由分子束外延(MBE)生长砷化镓层的砷化镓片；
图2表示从MBE生长的砷化镓层上蚀刻的梯形砷化镓模块；
图3表示砷化镓模块的剥离步骤；
图4表示利用中间衬底的交替剥离步骤的一部分；
图5表示图4所示交替剥离步骤的另一部分；
图6表示每个砷化镓模块自对准到硅衬底上；
图7表示根据图1至3和图6所示的改进方法，将微结构组装到硅衬底上的一个实施例；
图8表示将微结构组装到衬底上的另一个实施例；
图9表示将微结构组装到衬底上形成一个砷化镓二极管的实施例；
图10表示将微结构组装到衬底上形成一个砷化镓二极管的另一个实施例；
图11表示将微结构组装到衬底上形成一个砷化镓二极管的再一个实施例；
图12表示成型模块的例子；
图13为根据实验得到的组装微结构的照片；
图14为根据实验得到的一个运行的光二极管照片；
图15为覆盖砷化镓模块的金属化环形层的照片；
图16为根据实验得到的砷化镓二极管的电流-电压曲线；
图17为根据实验得到的砷化镓/砷化铝共振隧道二极管的电流-电压曲线。
具体实施方式
参见图1至17，本发明提供一种将微结构制作在衬底上的改进方法以及由此而产生的改进结构。只是为了说明的目的，图1至17仅限于描述将成型的砷化镓模块制作并组装到硅衬底上。
在将砷化镓模块组装到硅衬底时，梯形块自对准到设置在硅衬底顶面上的倒梯形凹槽区域。完成这种方法的步骤包括形成砷化镓模块，将模块移入溶液形成悬浮体，将悬浮体均匀地散开在具有凹槽区域的硅衬底的顶面上。在散开步骤期间，当模块随着流体跨越顶面时，模块自对准并固定到凹槽区域。在简短讨论了形成砷化镓模块以后，以下将详细讨论制作带凹槽区域之硅衬底的细节。
在一个特定的实施例中，作为一个例子，该方法提供在砷化镓片上形成梯形模块的一个步骤。该步骤包括提供如图1所示的砷化镓片10。该方法还提供了通过化学汽相淀积、溅射或类似方法在砷化镓片10的顶面覆盖层15上形成牺牲层13。该牺牲层13如砷化铝。其它牺牲层可以是磷化铟、二氧化硅和光致抗蚀剂和能够选择腐蚀的其它材料。当然，要根据特定的应用采用牺牲层。至于砷化铝的牺牲层，层的厚度在大约0.1μm和大约5.0μm之间，较好的为1μm左右。在形成牺牲层13之前，通过诸如湿法腐蚀、等离子刻蚀或反应离子蚀刻的方法腐蚀顶面15的步骤清除了任何天然氧化层。此外，在含有砷的情况下进行脱附的步骤去除了天然氧化层。接下来，优先蚀刻(以下将详细讨论)的步骤除去了牺牲层13，以便剥离在牺牲层13上形成的每个砷化镓模块(也称为台面形或梯形或截顶棱锥体结构)。
图1中，砷化镓层17形成在牺牲层13上。这一砷化镓层可以通过包括分子束外延、化学汽相淀积以及其它方法制作。该砷化镓层的厚度(T)至少有大约10nm或10nm以上，较好的为约10μm及10μm以上，取决于特定的应用。
为了产生所需尺寸的模块，本改进的方法提供了掩蔽和蚀刻砷化镓层17的步骤。图2说明了在这种掩蔽和蚀刻步骤之后的砷化镓衬底10，包括砷化镓模块19和覆盖砷化镓层17(未图示)的光致抗蚀剂层21。通常，对砷化镓层17的露出部分进行蚀刻，直达牺牲层13，如图2所示。这种蚀刻步骤提供了许多成型的砷化镓模块19。对于目前的例子，成型的模块包括梯形剖面或截顶棱锥体形状。这种梯形剖面可以通过湿法蚀刻、等离子刻蚀、离子铣和反应离子蚀刻等方法制作，取决于其应用。
通常，湿法蚀刻沿着每个砷化镓模块的侧面或边缘产生一个倾斜的剖面。由于掩蔽边缘平行于〔110〕方向，湿法蚀刻产生一个向外倾斜斜的剖面，如图2所示。相反，掩蔽边缘平行于〔110〕方向时，产生一个向内倾斜(或倒平面)的剖面。向外倾斜斜的剖面提供了一种所需的形状，它结合到硅衬底上，后者具有按互补方式形成的凹槽。
离子铣产生砷化镓模块，它具有向外倾斜斜的剖面，取决于离子束的角度。束的角度在砷化镓衬底10上顶面15的法线到顶面15大约0度至30度之间调整。为了使每个模块产生向外倾斜(或截顶棱锥形状)的剖面，一般在这种蚀刻步骤时使整个结构旋转。
反应离子蚀刻(RIE)也产生具有成型剖面的砷化镓模块。通常，这种蚀刻方法产生具有下陷侧面或倒台面剖面的模块。根据诸如蚀刻剂、压力、设备和其它等等的变量，这种蚀刻方法可以产生实际上具有恒定形状和/或剖面的模块。
在蚀刻MBE生长层后，通过优先蚀刻牺牲层13，从砷化镓衬底10上剥离梯形模块，如图3所示。这种剥离工艺可通过对砷化铝牺牲层的优先湿法蚀刻形成。在砷化镓的例子中，这种湿法蚀刻步骤一般通过诸如氢氟酸溶液或类似的化学方法实现。所用的蚀刻剂实际上腐蚀牺牲层，而不腐蚀砷化镓模块和/或衬底。
在将砷化镓模块与衬底10分离后，稀释和倒出湿法腐蚀液，从溶液中取出模块。在砷化镓的例子中，使用净化水、甲醇、乙醇或其它类似的溶液稀释并倒出湿法腐蚀液。作为选择，在稀释和倒出腐蚀液之后进行漂洗步骤。漂洗步骤采用诸如丙酮、甲醇、乙醇或任何其它具有低腐蚀性能的惰性溶液。这种溶液还提供了一种介质(或液体)，用以产生一种混合物，其中有悬浮的模块或通常叫悬浮体。
取代图3所示的剥离工艺，另一种剥离方法从图2所示的砷化镓结构生成图4所示的中间结构250。这种剥离方法在模块背部形成器件的应用中，加速了成型模块的剥离。如图所示，该方法包括涂敷填料或石蜡层253，最好是高温石蜡，覆盖牺牲层13露出部分的顶面和每个模块19之间的间隙255。一种这样的石蜡是TRANSENE公司生产的称为TECH WAX的产品。然后，该方法包括将图2所示的砷化镓结构倒置，并将其顶面21附着在中间衬底257上。这种中间衬底可以是硅片或类似材料。然而，在该附着步骤之前，对中间衬底表面261需完成一些步骤，最好用诸如氢氟酸之类的湿法腐蚀剂蚀刻掉任何天然的氧化物，并用诸如六甲基二硅氨烷也称为HMDS之类的增粘剂处理已清洁的表面。在分离砷化镓衬底10时，衬底10的背部263约留下50μm。然后，衬底10留下的厚度被蚀刻直达砷化铝层13。优先用诸如氢氧化铵和过氧化氢(6∶200NH3OH∶H2O2)之类的蚀刻剂蚀刻砷化镓衬底直达砷化铝层13。从而，该砷化铝层起停止腐蚀的作用以保护砷化镓模块19。分离砷化铝层13需要用诸如氢氟酸之类的腐蚀剂进行蚀刻的步骤。一般是在短时间将砷化铝层13浸入这种腐蚀液得以分离。在砷化铝层完全分离后，完成包括掩模、溅射和蚀刻在内的步骤，形成金属化的环形接点265，如图5所示。这种金属化环形接点是按光致抗蚀剂267形成的图形制成的。其中，这种接点的金属化包括诸如金、铝之类的材料。此外，诸如蚀刻、掩模、注入、扩散以及类似的其它处理步骤可以在模块上完成，以形成其它形状和有源器件。诸如三氯乙烷(TCA)之类的溶液溶解设置在每个模块19与光致抗蚀剂层21之间的填料或石蜡，从而从中间衬底257上剥离砷化镓模块19。为了减少腐蚀性，将砷化镓模块移送到诸如丙酮、甲醇、乙醇之类的惰性溶液或任何其它具有低腐蚀性能的溶液中。这种惰性溶液和模块通常称为混合物或总称为悬浮体。
悬浮体包括惰性溶液(液体)和成型的模块。悬浮体内存在足够的溶液允许模块在衬底顶面滑动。最好，悬浮体中溶液的量至少与模块的量为同等数量级。当然，溶液的量必须根据诸如模块的尺寸、模块的材料、衬底尺寸、衬底材料以及溶液之类的性能而决定。制作后，将悬浮体输送或散开在硅衬底50的顶面53之上，如图6所示。输送技术的细节将在下面制作硅衬底50的简短讨论之后再作讨论。
如图6所示，硅衬底50含有蚀刻的凹槽区域55。有多种技术，包括湿法腐蚀、等离子刻蚀、反应离子蚀刻、离子铣可提供凹槽区域55，或总称沟槽、接受部或接合部位。这种技术蚀刻的凹槽区域55具有与模块19互补的剖面形状。例如，在硅衬底上，每个凹槽区域都包括梯形剖面或倒截顶棱锥形状。梯形剖面允许模块19自对准，并通过改进的输送技术紧贴到凹槽区域55。
输送技术包括在顶面53上方均匀散开或倾倒悬浮体的步骤。可以通过在顶面53上方均匀倾倒一杯悬浮体完成输送技术。另外，也可以用玻璃吸管、烧瓶、烧杯或任何其它类型的容器和/或能够均匀地在顶面53上方输送该悬浮体的装置中输送该悬浮体。总之，以允许实际覆盖顶面53的速率在顶面53上方倾倒悬浮体，但防止已经置于凹槽区域的模块浮出或跳出。悬浮体的流动一般为层流，但也可以为非层流，视特定的应用而定。在砷化镓模块的例子中，液体以大约0.01毫米/秒至大约100毫米/秒的速率在顶面53上方流动。最好，液体以大约1毫米/秒的速率流动。按这种流速，模块随着液体均匀地流动翻滚到顶面53上、自对准、并固定到凹槽区域55内。作为一种选择，为了防止已经置于凹槽区域的模块浮出，输送步骤可以用离心机或类似的方式实施。例如，离心机可以将一个力施加在已经置于凹槽区域的模块上，由此防止模块随着溶液浮出。
作为一个特定的实施例，图7中示出了根据图1至图3和图6所示方法制作的结构20。组装的微结构包括硅衬底10、砷化镓模块19和凹槽区域55。梯形的模块和凹槽区域允许在输送步骤期间使模块自对准并紧嵌到凹槽区域。模块的一侧与凹槽区域相应一侧之间所形成的角度A约为0度与20度之间。最好，该角度为小于大约5度，但大于0度。该角度便于每个模块的自对准过程。此改进的方法允许通过各种成形的模块和凹槽区域的几何形状以及液体输送步骤，将多个模块或微结构制作在衬底上。
作为上面特定实施例的一种变换，模块19通过图8中的结构70所示的易熔层75附着到凹槽区域55。在进行剥离步骤之前，将诸如金、银、焊锡或类似的金属化层成型在表面73上。另外，将模块与每个凹槽区域附着的这一层可以是合成粘合剂或类似的材料以取代易熔层。通常用包括掩模、蚀刻和溅射的处理步骤形成这种金属化层。在输送步骤之后，在金属化层73与硅衬底10之间加热结构70形成易熔层75。该易熔层在衬底10与模块19之间提供了机械和电气两种接触。这种将模块附着到衬底上的方法提供了一种有效、成本合理和容易操作的技术。
在另一种特定的实施例中，如图1、2、4、5和6所示的改进方法提供了砷化镓发光二极管(LED)200的制备方法，如图9所示。如图所示，砷化镓LED包括硅衬底203和砷化镓模块205。每个砷化镓模块至少包括金属化环形接点207、p型砷化镓层209、n型砷化镓层211以及易熔层213。为了点亮该器件，将电压加到金属化环形接点207或金属化层上。如图所示，从位于砷化镓模块205的每个金属化环形接点207内的中心区域发光(hv)。
在另一个特定的实施例中，该改进的结构形成了如图10所示的砷化镓发光二极管(LED)90。与前面的实施例相同，该砷化镓LED包括硅衬底93和砷化镓模块95。同前面的实施例相似，每个砷化镓模块还至少包括金属化表面97、p型砷化镓层101、n型砷化镓层103以及易熔层105。为了点亮该器件，可通过电极探针将电压加到金属化层97上。如图所示，光子(hv)从砷化镓模块95的边缘区域而不是中心区域发射。
在另一个特定的实施例中，改进的结构形成具有锥形孔开口123的砷化镓结构120，如图11所示(未按比例)。用诸如湿法蚀刻、离子铣、反应离子蚀刻以及其它一类的处理步骤形成该锥形孔开口123。该砷化镓结构可以是LED、激光器或类似器件。同前面的实施例相似，该砷化镓结构120包括衬底125和砷化镓模块127。结构120还包括顶部的金属化层131，例如覆盖砷化镓模块127上的铝以及绝缘层133。环形接触层135在衬底125与砷化镓模块127之间提供机械和电气接触。用于砷化镓模块的机械支承和电气接触来自于边缘137。如图所示，发光(或产生激光)的孔139的直径在大约5微米与大约40微米之间。为了接通该器件，将电压加到金属化层131上。由砷化镓模块127激发的光子(hv)通过发光孔139，并通过锥形孔开口123，如图所示。纤维光缆141接收光子。该纤维光缆包括一个锥形接收端，直径为大约50微米至大约200微米之间。
只是为了说明的目的，本改进的方法以及所形成的结构仅限于由砷化镓制成的梯形模块。另外，改进的方法和结构也可适用于具有成型特征的任何模块。成型特征允许这种模块通过液体输送在衬底的表面上方移动，与相应的凹槽区域对准并插入该凹槽区域。图12表示成型模块的另一些例子。如图所示，这些模块可以是矩形300、八角形303或圆形305。矩形模块有多达四种取向插到具有相应凹槽区域的衬底中。此外，八角形模块有多达八种取向，圆形模块有连续取向，只有其窄端先插入凹槽区域中。这些模块也可以是诸如硅、砷化镓、砷化铝、金刚石、锗以及其它III-V和II-VI族化合物材料组成的多层结构。这种多层结构可以包括金属，像二氧化硅、氮化硅一类的绝缘体，以及两者的结合。通常，这种模块可以由能够形成成型特征的几乎任何类型的材料制成。一般，通过离子铣、反应离子蚀刻和其它类似的方法制作这种模块。为了便于每个模块对准到凹槽区域，模块的侧面与用以放置模块的凹槽区域的相应侧面之间的角度在大约0度与大约20度之间。较佳的，这一角度为小于大约5度但大于0度。
成型模块与诸如硅片、塑料片、砷化镓片、玻璃衬底、陶瓷衬底或类似的其它衬底组装在一起。该衬底包括能在其上形成与成型模块互补的成型凹槽区域或一般为粘合部位或接收部之类几乎任何类型的材料。
实例
为了证明该原理和说明该方法和结构的运作，将以二极管形式的砷化镓模块组装到硅衬底上并进行运作。
在砷化镓的例子中，输送包括砷化镓模块在内的悬浮体，使模块自对准到位于硅衬底顶面的凹槽区域。该方法的步骤包括形成砷化镓模块、将模块转移到溶液形成悬浮体，并在具有凹槽区域的硅衬底的顶面上方均匀地传送该悬浮体。成型模块通常跌落在衬底的顶面上，自对准并与具有互补形状的凹槽区域接合。
在生成硅衬底时，用乙二胺焦儿茶酚吡嗪(ethylenediamine pyrocatecholpyrazine(EDP)或氢氧化钾(KOH)溶液形成具有梯形剖面或倒截顶棱锥形状的凹槽区域。每次溶解形成梯形剖面，使其从垂直于衬底顶面的一面外倾斜大约55度。梯形剖面因{111}面与{100}或{110}面之间的选择腐蚀(1∶100)而产生。尤其是，按1∶100的比例，{111}面的腐蚀较{100}或{110}面的为慢。
在本例中，EDP溶液将凹槽区域蚀刻到硅衬底内。EDP包括乙撑二胺(约500毫升.)、邻苯二酚(约160克.)、水(约160克.)、对二氮杂苯(约1克.)。EDP槽也置于约摄氏115度的温度。在腐蚀步骤之前，首先在该衬底的顶面上形成厚度约为200毫微米的热氧化层(SiO2)。掩蔽和腐蚀该氧化层形成矩形区域。然后垂直腐蚀该区域约10微米，在顶面上形成长度约为23微米长的方形开口。侧面从每个开口对称地向下突出至方形底面，长度约为9微米。
在制作梯形模块时，预先准备两英寸的n型砷化镓片，为形成自对准模块提供衬底。首先通过解吸过程清除该模块顶面上的天然氧化物。该解吸过程包括将片子暴露在大约摄氏700度的含砷环境下。在解吸步骤后，在顶面生长掺杂或不掺杂的1微米砷化铝牺牲层并与顶面相接触。然后，用MBE方法生成厚度约为10.7微米的掺硅砷化镓覆盖砷化铝层。掺硅浓度为大约1018原子/cm3。然后，用光致抗蚀剂为MBE生长层的顶面进行光刻。
为MBE生长层的顶面进行光刻包括将厚度约为1.6微米的光致抗蚀剂层散开在MBE生长的砷化镓层的顶面上。所用的光致抗蚀剂是由Shipley生产的AZ1400-31型产品。光刻步骤至少包括曝光、显影和烘干光致抗蚀剂。该烘干步骤在大约摄氏120度的温度下进行大约1小时，以烘硬光致抗蚀剂层。光刻步骤在顶面上形成多个矩形，每个矩形的尺寸约为35微米×24微米(光致抗蚀剂的曝光部分)。
在光刻以后，未曝光区域被腐蚀，形成附在砷化铝牺牲层上的梯形模块。模块与凹槽区域之间的合适配合要求每个模块基本上有相同的形状。因此，在该特定例子中要试验各种湿法腐蚀的浓度和工艺。
通常，湿法腐蚀未曝光区域所产生的结果取决于掩模边缘的取向。如果掩模边缘平行于{110}方向，湿法腐蚀未曝光区域将形成从每个模块的顶面向外倾斜的剖面。而当掩模边缘平行于{110}方向时，湿法腐蚀未曝光区域，将形成向内倾斜斜(或倒台面)的剖面。
由于砷化镓包括两组不同的{111}面，故湿法腐蚀产生了这种不同的剖面(台面和倒台面)。在{111}A或{111}镓面内，表面上的每个镓原子都有三个砷原子结合在下方。至于{111}B或{111}砷面，表面上的每个砷原子包括三个镓原子结合在下方。{111}B层内的每个砷原子包括一对悬空电子，因此砷原子外露。这种悬空电子不呈现在{111}A面的结构内。从而，{111}B面具有比{111}A面腐蚀更快的倾向，由此形成有倒台面形状的模块，这种形状通常与腐蚀在硅衬底上的凹槽区域不相容。
掩模边缘平行于〔110〕面比之掩模边缘平行于〔110〕面的情况将产生更多的凹割。在本例中，掩模边缘平行于{110}方向时在模块顶部附近每1微米垂直腐蚀水平腐蚀约1.1微米。在模块的底部附近的区域每1微米垂直腐蚀将导致大约0.4微米的水平腐蚀。因此，掩模边缘平行于〔110〕面相对于模块顶部附近的区域，每微米的垂直腐蚀将产生大约0.8微米的水平腐蚀，在模块的底部附近每微米的垂直腐蚀将产生0.1微米的水平腐蚀。在{110}方向，底部方形区域的形成需要更长的掩模。
除了掩模校准外，腐蚀液浓度也影响到每个砷化镓模块的形状。在本例中，磷酸、过氧化氢和水(H2PO3∶H2O2∶H2O)的溶液为MBE生长的砷化镓层提供了所期望的腐蚀液。根据加到磷酸中的过氧化氢和水量，这种腐蚀液产生三种不同的剖面。稀释的磷酸浓度(1∶1∶40 H2PO3∶H2O2∶H2O)形成梯形或台面形剖面模块的顶面与相应侧面之间具有30度的角具有较低浓度的腐蚀液产生角度约为10至20度的更浅的梯形或台面形剖面。这种更浅剖面多半是由于腐蚀反应局限于{111}B面的结果。
更高浓度的磷酸(1∶1∶20H2PO3∶H2O2∶H2O及以上)产生由{111}B面反应所限定的内倾斜(或倒台面)剖面。较佳的，在稀释的与加浓的溶液之间的磷酸浓度(1∶1∶3OH2PO4∶H2O2∶H2O)提供更好的为与蚀刻在硅衬底上的凹槽区域组装的剖面。这种腐蚀液产生角度为55度的平行于{110}面和角度为49度的平行于〔110〕面的模块，并通常以约为0.133微米/分钟(或约为133毫微米/分钟)的速率腐蚀MBE生长层。在产生所述结果时，腐蚀液一般当其消耗时即添满。
将磷酸与过氧化氢的比例提高到3∶1时，产生与所述实验相似的剖面，但通常将在侧面上产生粗糙的表面。这种粗糙的表面是本申请所期望的。
在此例的一种变换中，类似的湿法腐蚀液(1∶1∶30 H2PO3∶H2O2∶H2O)便于由铝砷化镓(aluminum gallium arsenide)MBE生长层形成铝砷化镓模块。这种腐蚀液为铝砷化镓(x＝0.1，AlxGa1-xAs)MBE生长层提供了平行于{110}方向的内倾剖面，垂直腐蚀速率大约与砷化镓MBE生长层的相同。然而，砷化铝的存在将{111}B面的腐蚀提高到反应速率限制的范围。由于腐蚀x＝0.1，AlxGa1-xAs在{111}B面的反应大于砷化镓，故腐蚀液产生一个内倾斜的剖面。
除了湿法腐蚀以外，也采用离子铣来生成砷化镓梯形模块。离子铣MBE生长砷化镓层提供了外倾斜的剖面，顶面与相应侧面之间的角度约为68度至90度。为了形成这一角度，离子束的角度相对MBE生长层的顶面法线约为0度至25度的范围。更陡的束角(接近90度)一般产生垂直或基本为垂直的剖面。在这种处理步骤期间，离子铣还要求衬底绕着中心轴旋转。其它处理变量包括氩气腐蚀剂、压力约为50毫乇的、离子能量约1000v以及每七分钟铣1微米的离子铣速率。在铣削期间，当光致抗蚀剂掩模横向浸蚀约为每70分钟5微米时，将产生角度约为68度的侧壁。砷化镓与光致抗蚀剂之间的选择铣削性约为3∶1。离子铣形成基本恒定的砷化镓模块，因此在本特定的实例中比之湿法腐蚀更有效。
最后，用含有1∶1∶30 H2PO3∶H2O2∶H2O浓度的腐蚀液槽清除砷化镓或砷化铝留下的氧化物。这种氧化物一般是当砷化铝暴露在腐蚀槽或离子铣时形成的。然后可以用氢氟酸来清除氧化层(外观上看起来粗糙并呈褐色)。通常，这种氧化层降低了氢氟酸在牺牲砷化铝层上的腐蚀效力。
在清除氧化层以后，优先用HF溶液腐蚀砷化铝牺牲层，以剥离砷化镓模块。尤其用浓度约为5∶1 H2O∶HF的HF溶液腐蚀该牺牲层并剥离该模块。任何由于表面张力可能仍然留在衬底上的模块都可以机械地从衬底移到溶液中。与所设计的24微米×24微米的尺寸相比，被移走的模块底部尺寸约为22微米×23微米。
在从衬底上移走模块以后，用聚四氟乙烯移液管从砷化镓模块上移去大部分HF溶液。任何留下的HF都可以用水漂去。该漂洗步骤形成了包括模块和水在内的混合物。然后，将诸如丙酮之类的惰性溶液取代水减少在模块上形成氧化物。一旦在惰性溶液中，模块可以集结在一起，或者浮到溶液的表面，或者落到溶液的底部。这种裸眼通常可见的集结降低了以后输送步骤的效力，因此，通过机械搅动该溶液并伴随着超声振动的方法将它们分离。
然后，将包括砷化镓模块的惰性溶液均匀地输送(或倾倒)到硅衬底的表面。特别是可用玻璃吸管将这种溶液输送到衬底的顶面上。该溶液以基本上产生层流的速率进行输送。这种层流允许模块跌落和/或滑落到衬底的顶面，并经由梯形剖面自对准到凹槽区域。通常，该输送速率应当使包括模块的溶液均匀地在衬底表面上流动，但不应使已经放置在凹槽区域内的模块游离或重新移动。
通过离子铣制作的模块比湿法腐蚀产生更高的产率。经过离子铣的基本上有一致剖面的模块，在溶液基本上被蒸发以前就自对准并插入到设置在衬底表面上超过百分之九十的凹槽区域内。当溶液蒸发时，表面张力通常将模块的一部分拉出凹槽区域。大约百分之三十至百分之七十的凹槽区域在蒸发后仍被填满。通过采用蒸发期间表面张力较低的液体，或者通过基本上能消除表面张力的极苛刻的烘干方法可以解决产率的减少。因此，可以将模块在溶液蒸发之前接合到凹槽区域内，由此固定产率。剖面一致性较差的经湿法腐蚀的模块正确插入到大约百分之一至百分之五的现有凹槽区域内。因此，经离子铣的模块相对用湿法腐蚀制作的模块具有更高的产率。
图13所示的照片，说明了根据本实例设置到硅衬底150的凹槽区域内的砷化镓模块。每个凹槽区域的顶部153为方形，长度约为23微米。如图所示，该照片包括了凹槽区域155、硅衬底157以及梯形模块159。
为了进一步说明本实例的操作，在图14所示的照片中表示发光二极管170。该照片包括硅衬底173和发光的砷化镓LED175。砷化镓LED在电偏置下发出红外辐射。生长在MBE层的砷化镓LED均包括N+砷化镓盖层(约为100毫微米厚)、N+Al0.1Ga0.9As迁移层(约为1微米厚)、P-有源区(约为1微米厚)、以及p+过渡层(约为1微米厚)。如图15所示，砷化镓LED在每个模块的顶部还需要用以加电压的环形金属接点400以及用于光输出的开口403。图16所示的电流-电压(I-V)曲线500表示图14所示砷化镓结构的典型的p-n结特性。
砷化镓/砷化铝谐振-隧道二极管(RTD)也可集成到硅片上。生长在MBE层上的RTD包括位于两个砷化铝阻挡层(约为2.5毫微米深度)之间的砷化镓阱(约为5.0毫微米深度)。与硅集成在一起的RTD的电流-电压特性表明在V峰值＝2.0V时出现微分负电阻(NDR)，如图17所示。在该电压下，峰-谷比值约为2.5。在将RTD偏置到NDR区域后观察到的振荡频率(rf)限制为100Mhz。偏置电路的外部电容和电感引起这频率限制。
仅仅为了说明的目的，以上描述是以将砷化镓模块组装到硅衬底为依据的。显然，本发明也可以用来在硅衬底上形成砷化镓二极管。另一种商业应用包括将砷化镓激光器与硅集成电路组装在一起。该硅芯片可以在极高比特-速率光通道上与具有集成光学检测器的其它芯片通信。其它应用包括用于微波电子学的硅集成电路上的集成微波砷代镓器件。更进一步的应用还有将微结构与形成有源液晶显示器(ALCD)的塑料片以及类似的元件结合在一起。在该应用中，塑料片可以通过模压、注塑等工艺制成。本发明的概念可以应用于组装到较大的衬底上的几乎任何类型的微结构。
用一般术语描述了制作自组装器件的独特剖面，只是为了说明，这独特的剖面可以是衬底上具有对应凹槽区域结构的单一模块结构。这种模块结构可以有各种形状，诸如圆柱形、矩形、方形、八角形、锥形、T形、卵形以及其它的形状。对于确定的取向，该模块结构有能帮助自装配的宽度、长度和高度。此外，只要每种结构在衬底上都含有特定的结合部位，在混合体(溶液和模块)中也可以出现一种类型以上的结构。
尽管为了清楚了解，通过举例说明详细描述了前面的发明，但显然在所附权利要求书的范围内还可以进行某些改变和变换。
以上的说明书是用于说明而并非限制本发明。在评述这些说明的基础上，对本发明所作的许多变换对本领域的熟练人员来讲将变得很明白。仅仅通过例子说明本发明可用于将砷化镓器件组装到硅衬底上，也可用在其它的应用上。因此，本发明的范围并非由上述说明书所确定，而应当由所附的权利要求书及其全部等同物的范围所确定。

Claims (26)

1.一种电子器件，包括：
塑料衬底，具有多个经由其主表面形成的成型凹槽；以及
多个成型微结构，每个成型微结构具有第一表面和第二表面，并具有倾斜的侧面，所述侧面与所述成型凹槽之一形成互补，使其仅仅以一个方向装配到所述第一表面通过所述衬底表面露出的位置，所述第一表面仅仅通过所述倾斜的侧面连接到所述第二表面，所述第一表面的尺寸大于所述第二表面的尺寸且其上形成有电子结构。
2.如权利要求1所述的功能模块，其特征在于，所述第一表面包括设置其上的导电触点。
3.如权利要求1或2所述的功能模块，其特征在于，所述第一表面的尺寸小于所述第二表面的尺寸。
4.如权利要求1至3任一所述的功能模块，其特征在于，所述第一表面具有一圆形周边、矩形周边或八角形周边。
5.如权利要求1至4任一所述的功能模块，其特征在于最大长度尺寸约为1mm或1mm以下。
6.如权利要求1至4任一所述的功能模块，其特征在于还包括一多层结构。
7.如权利要求6所述的功能模块，其特征在于，所述多层结构包括金属层、绝缘层、二氧化硅层和氮化硅层之一。
8.如权利要求1至6任一所述的功能模块，其特征在于它或者是发光二极管，或者是激光器。
9.一种电子器件，包括：
塑料衬底，具有多个经由其主表面形成的成型凹槽；以及
多个半导体微结构，它包括一种成型微结构，所述成型微结构具有第一表面和实质上与之平行的第二表面，所述第一表面具有相关的第一尺寸，所述第二表面具有相关的第二尺寸，所述第一尺寸大于所述第二尺寸，并具有一个边缘，所述边缘邻近所述第一表面和所述第二表面，并具有一个与所述成型凹槽互补的斜面，所述第一表面在其上形成电子结构，所述微结构的最大长度尺寸约为1mm或1mm以下，
所述半导体微结构设置在所述成型凹槽内，由此通过所述衬底的所述主表面露出所述第一表面。
10.如权利要求9所述的半导体微结构，其特征在于，所述成型模块包含从包括硅、砷化镓、铝砷化镓、金刚石和锗的组中选择的材料。
11.如权利要求9所述的半导体微结构，其特征在于，所述成型模块包括III-V族化合物和II-VI族化合物之一。
12.如权利要求9至11任一所述的半导体微结构，其特征在于，所述成型模块为多层结构。
13.如权利要求12所述的半导体微结构，其特征在于，所述成型模块为构成发光二极管的多层结构。
14.如权利要求13所述的半导体微结构，其特征在于所述多层结构包括砷化镓。
15.一种电子器件，包括：
塑料衬底，具有多个经由其主表面形成的成型凹槽；以及
多个集成电路器件，每个集成电路器件包括成型微结构，所述微结构包括半导体材料，且其长度尺寸小于或等于1mm，所述微结构具有顶面、小于所述顶面的底面、以及连接所述顶面与所述底面的斜面，所述顶面具有形成其上的电子器件，
所述斜面与所述成型凹槽相匹配，
所述集成电路器件设置在所述成型凹槽内，由此通过所述衬底的主表面露出所述电子器件。
16.如权利要求15所述的集成电路器件部分，其特征在于所述半导体材料为多层结构。
17.如权利要求15或16所述的集成电路器件部分，其特征在于，所述半导体材料构成发光二极管。
18.如权利要求17所述的集成电路器件部分，其特征在于，所述发光二极管为砷化镓发光二极管。
19.一种电子器件，包括：
塑料材料的衬底，具有多个经由其主表面形成的成型凹槽；以及
多个电子芯片，每个电子芯片包括含有半导体材料的成型微结构，所述微结构具有与所述成型凹槽相匹配的锥形面，所述锥形面连接顶面与小于所述顶面的底面，所述顶面在其上形成至少一个电子器件，所述微结构的长度尺寸小于或等于1mm，所述顶面的周边为矩形、圆形或八角形，
所述电子芯片设置在所述成型凹槽内，由此通过所述衬底的所述主表面露出所述电子器件。
20.如权利要求19所述的电子芯片，其特征在于进一步包括设置在顶上或者在所述顶面和所述底面的导电触点。
21.如权利要求19或20所述的电子芯片，其特征在于，所述半导体材料为多层结构。
22.如权利要求21所述的电子芯片，其特征在于，所述多层结构构成发光二极管。
23.一种电子器件，包括：
塑料材料的衬底，具有多个经由其主表面形成的成型凹槽；以及
多个发光二极管，每个发光二极管含有许多半导体材料，所述半导体材料具有第一表面和小于所述第一表面的第二表面，所述半导体材料具有非平行的侧面，将所述第一表面连接到所述第二表面并与所述成型凹槽相匹配，所述发光二极管的长度尺寸小于或等于1mm，所述第一表面具有形成其上的电子结构以产生光，
所述发光二极管设置在所述成型凹槽内，由此通过所述衬底的所述主表面露出所述电子结构。
24.如权利要求23所述的发光二极管，其特征在于，所述半导体材料包括III-V族化合物。
25.如权利要求24所述的发光二极管，其特征在于，所述半导体材料包括砷化镓。
26.如权利要求23至25任一所述的发光二极管，其特征在于，所述第一表面的周边为矩形、八角形或圆形。
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CN100466250C (zh) 2009-03-04
JPH09506742A (ja) 1997-06-30
EP1372194A1 (en) 2003-12-17
EP0734586A1 (en) 1996-10-02
CN1103118C (zh) 2003-03-12

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