CN1874874B - 用于电化学机械处理的垫组件 - Google Patents

用于电化学机械处理的垫组件 Download PDF

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CN1874874B
CN1874874B CN2004800321581A CN200480032158A CN1874874B CN 1874874 B CN1874874 B CN 1874874B CN 2004800321581 A CN2004800321581 A CN 2004800321581A CN 200480032158 A CN200480032158 A CN 200480032158A CN 1874874 B CN1874874 B CN 1874874B
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pad assembly
electrode
processing pad
upper strata
anticorrosive
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CN1874874A (zh
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胡永崎
斯坦·D·蔡
王艳
丰·Q·刘
常守荪
陈梁韵
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Applied Materials Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/10—Electrodes specially adapted therefor or their manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/14—Electrodes, e.g. composition, counter electrode for pad-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Abstract

本发明提供了用于处理衬底的处理垫组件的实施例。处理垫组件包括上层和电极，上层具有处理表面，电极具有耦合到上层的顶侧和与顶侧相对的底侧。第一组孔形成为通过上层，以将电极暴露到处理表面。至少一个孔径形成为通过上层和电极。

Description

用于电化学机械处理的垫组件
技术领域
本发明的实施例一般地涉及用于电化学机械处理的处理垫组件。
背景技术
电化学机械处理(ECMP)是一种这样的技术，其用于通过电化学溶解从衬底表面移除导电材料，而且使用与传统化学机械抛光(CMP)处理相比减小的机械磨蚀来同时地抛光衬底。通过修正偏压的极性，ECMP系统可以一般地适用于将导电材料沉积在衬底上。通过在阴极与衬底表面之间施加偏压来进行电化学溶解，以将导电材料从衬底表面移除到周围电解液中。该偏压可以通过布置在抛光材料上或布置为穿过抛光材料的导电触头而施加到衬底表面，其中衬底在所述抛光材料上被处理。抛光处理的机械部分通过在衬底与抛光材料之间提供相对运动来进行，其可以增强从衬底移除导电材料。
铜是可以使用电化学机械抛光被移除的一种材料。通常，利用两步处理来抛光铜。在第一步骤中，移除大部分铜，通常在衬底表面上剩下一些铜残余。接着在第二步骤中移除铜残余，通常称作过抛光(over-polishing)步骤。
但是，铜残余的移除可能导致在通常为电解质或阻挡层的周围材料的平面之下凹陷的铜特征。凹陷量通常与过抛光步骤中使用的抛光化学剂和处理参数、以及受到抛光的铜特征的宽度有关。由于铜层沿衬底不具有均匀厚度，其难以在不引起下述情况的状态下移除全部铜残余，所述情况为在一些特征部上引起凹陷而在另一些特征不能移除全部铜残余。
发明内容
在一个实施例中，提供了一种用于处理衬底的处理垫组件。该处理垫组件包括上层和电极，上层具有处理表面，电极具有耦合到所述上层的顶侧和与所述顶侧相对的底侧。第一组孔形成为通过所述上层以将所述电极暴露到所述处理表面。至少一个孔径形成为通过所述上层和所述电极。
在另一个实施例中，处理垫组件包括上层和电极，上层具有处理表面，电极具有耦合到所述上层的顶侧和与所述顶侧相对的底侧。所述电极具有第一导电区域和至少第二导电区域。第一组孔形成为通过所述上层以将所述电极暴露到所述处理表面。至少一个孔径形成为通过所述上层和所述电极。
附图说明
为了获得并可以详细理解本发明的上述特征、优点和目的，对于以上简单总结的本发明的更具体描述可以通过参考附图中图示的其实施例来进行。
但是，应该注意的是，附图仅图示了本发明的典型实施例，并因此不应被认为是对其范围的限制，因为本发明可以允许其他等同效果的实施例。
图1是具有处理垫组件的电化学机械处理系统的处理台的局部剖视的侧视图；
图2是图1的处理台的压板和处理垫组件的一个实施例的局部剖视分解图；
图3是图1的处理台的处理垫组件的电极的一个实施例的俯视图；
图4是图1的处理台的处理垫组件的电极的另一个实施例的俯视图；
图5是图1的处理台的处理垫组件的电极的另一个实施例的俯视图；以及
图6是图1的处理台的处理垫组件的电极的另一个实施例的俯视图；且
为了帮助理解，在可能处使用了相同标号以表示对附图共同的相同元件。
具体实施方式
这里提供了一种适于增强从衬底均匀移除材料的处理垫组件。该处理垫组件至少包括电极和处理垫。处理垫可以是非导电的或导电的。
图1描述了具有本发明的处理垫组件106的一个实施例的处理台100的剖视图。处理台100包括承载头组件118，承载头组件118适于将衬底120保持为抵靠压板组件142。在其之间提供相对运动以抛光衬底120。该相对运动可以是旋转、横向、或其组合，并可以通过承载头组件118和压板组件142中的任一个或两者来提供。
在一个实施例中，承载头组件118适于将衬底120保持为抵靠布置在ECMP台132中的压板组件142。承载头组件118由耦合到基座130并在ECMP台132上方延伸的臂164支撑。ECMP台可以耦合到基座130或布置在基座130附近。
承载头组件118通常包括耦合到承载头122的驱动系统102。驱动系统102通常至少向承载头122提供旋转运动。承载头122可以被另外朝向ECMP台132致动，使得在处理期间，保持在承载头122中的衬底120可以布置为抵靠ECMP台132的处理表面104。
在一个实施例中，承载头122可以是由加州圣塔克莱拉的应用材料公司制造的TITAN HEADTM或TITAN PROFILERTM晶片承载器。通常，承载头122包括外壳124和保持环126，保持环126界定了其中衬底120保持在其中的中心凹部。在处理期间，保持环126围绕布置在承载头122内的衬底120以防止衬底120从承载头122下方滑脱。已构思的是，可以使用其他的承载头。
ECMP台132通常包括可旋转地布置在基座158上的压板组件142。轴承154布置在压板组件142与基座158之间，以益于压板组件142相对于基座158的旋转。压板组件142通常耦合到向压板组件142提供旋转运动的电机160。
压板组件142具有上板114和下板148。上板114可以由诸如金属或刚性塑料之类的刚性材料制成，并且在一个实施例中，上板114由电解质材料制成或涂覆有电解质材料，该电解质材料例如是氯化聚氯乙烯(CPVC)。上板114可以具有包括平坦上表面的圆形、矩形或其他几何形状。上板114的顶表面116在其上支撑处理垫组件106。处理垫组件106可以通过磁引力、静电引力、真空、粘接剂等被保持到压板组件142的上板114。
下板148通常由诸如铝之类的刚性材料制成，并可以通过诸如多个紧固件(未示出)之类的传统方式耦合到上板114。通常，多个定位销146(图1中示出了一个)布置在上板114与下板148之间以确保其间的对准。上板114和下板148可以可选地由单个整体构件制成。
增压室138界定在压板组件142中并可以部分地形成在上板114或下板148的至少一个中。在图1所示的实施例中，增压室138被界定为部分地形成在上板114的下表面中的凹部144。至少一个孔108形成在上板114中，以允许在处理期间从电解液源170提供到增压室138的电解液流动通过压板组件142并与衬底120进行接触。增压室138由耦合到上板114以封闭凹部144的封盖150部分地为界。可选地，电解液可以从管道(未示出)分配到处理垫组件106的顶表面上。
至少一个接触组件134与处理垫组件106一起布置在压板组件142上。该至少一个接触组件134至少延伸到或延伸超出处理垫组件106的上表面，并适于将衬底120电耦合到电源166。处理垫组件106耦合到电源166的不同端子，使得可以在衬底120与处理垫组件106之间建立电势。
换言之，在处理期间，当衬底120保持为抵靠处理垫组件106时，接触组件134通过将衬底120耦合到电源166的一个端子而使衬底120偏压。处理垫组件106耦合到电源166的另一个端子。从电解液源170引入并布置在处理垫组件106上的电解液实现了在衬底120与处理垫组件106之间的电路，其帮助将材料从衬底120的表面移除。
图2描述了图1的处理垫组件106和压板组件142的局部剖视分解图。处理垫组件106至少包括非导电上层212和导电下层或电极210。在图2所示的实施例中，可选的副垫211布置在电极210与上层212之间。该可选的副垫211可以用于此处讨论的处理垫组件的任何实施例中。处理垫组件106的电极210、副垫211和上层212可以通过使用粘接剂、接合(bonding)、压模制等组合为整体组件。在一个实施例中，使用粘接剂将电极210、副垫211和上层212附装在一起。粘接剂可以具有对电极210、副垫211和上层212较强的物理和/化学接合，并可以抵抗电解液化学剂。合适的粘接剂的示例包括但不限于聚氨脂粘接剂、硅酮粘接剂、环氧粘接剂等。
通过被选为形成处理垫组件106的材料的表面形态(即，对固体的织物、丝网和穿孔)或者通过粘接促进剂，可以提高在电极210、副垫211和上层212之间的粘接剂接合。粘接促进剂可以是导电的。粘接促进剂的示例包括但不限于硅烷耦合剂、钛酸盐耦合剂等。可选地，待粘接的表面中的一个或多个可以被化学处理或等离子处理以提高粘接力。所构思的是，可以使用表面形态、耦合剂、或者化学或等离子处理的任何组合来获得在处理垫组件106的层之间所期望的粘接力。
上层212可以由与处理化学剂反应兼容的聚合材料制成，其示例包括聚氨酯、聚碳酸酯、含氟聚合物、PTFE、PTFA、聚亚苯基硫醚(PPS)、或其组合，以及适于在电化学处理环境下使用的其他材料。在一个实施例中，处理垫组件106的上层212的处理表面214是电解质，例如，聚氨酯或其他聚合物。
在另一个实施例中，处理垫组件106的上层212可以包括导电的或由导电合成物(即，导电元素以与构成处理表面的材料一体的方式被分散，或者导电元素包括构成处理表面的材料)制成的处理表面214，导电合成物例如是具有分散在其中的导电微粒的聚合物母料、或者导电材料涂覆的织物等。
在2003年6月6日由Y.Hu等人递交的美国专利申请序列号No.10/455,941(题为“CONDUCTIVE POLISHING ARTICLE FORELECTROCHEMICAL MECHANICAL POLISHING”，代理卷号4500P4)和2003年6月6日由Y.Hu等人递交的美国专利申请序列号No.10/455,895(题为“CONDUCTIVE POLISHING ARTICLE FORELECTROCHEMICAL MECHANICAL POLISHING”，代理卷号4500P5)中描述了适于从本发明受益的处理垫组件的示例，其两者通过引用而将全文结合于此。
在一个实施例中，至少一个可渗透通道218布置为至少通过上层212并至少延伸到电极210，即，可渗透通道218布置在任何其间的层中，例如副垫211。通道218允许电解液在衬底120与电极210之间建立导电通路。通道218可以是上层212的可渗透部分、形成在上层212中的孔、或其两者的组合。当存在副垫211时，其也可以由可渗透材料形成或包括与形成在上层212中的孔对准的孔。在图2所示的实施例中，可渗透通道218是形成在上层212和可选的副垫211中并通过两者的多个孔216，从而在处理期间允许电解液流动通过并与电极210进行接触。
可选地，可渗透通道218的延伸部222可以形成在电极210中并至少部分地通过电极210(以虚线示出)，这是为了增大电极210与电解液接触的表面积。延伸部222可以延伸完全通过电极210。在处理期间，电解液与电极210的更大面积的接触提高了从衬底120的表面移除材料的速率。
副垫211通常由比上层212的材料更软或更柔性的材料制成。可以选定上层212与副垫211之间在硬度或计示硬度(durometer)上的差别来产生所期望的抛光(或沉积)性能。通常，副垫211可以具有从以约8肖氏O到约20肖氏D的范围上的计示硬度。副垫211也可以是能压缩的。合适的副垫211材料的示例包括但不限于与处理化学剂兼容的泡沫聚合物、弹性体、毛毡、浸渍毛毡和塑料。
电极210布置在压板组件142的上板114的顶表面116上并可以通过磁引力、静电引力、真空、粘接剂等被保持在该处。在一个实施例中，使用粘接剂将电极210粘接到上板114。所构思的是，诸如离形膜(releasefilm)、衬垫或其他粘接层可以布置在电极210与上板114之间，以帮助处理台100中处理垫组件106的操控、插入和移除。
电极210至少具有一个端子202，以帮助耦合到电源166，其例如通过用不锈钢螺钉(未示出)将端子202紧固到电源166的引线204。电极210可以充当单个电极，或可以包括互相隔绝的多个独立的电极区域。电极210通常包括抗腐蚀导电材料，例如金属、导电合金、金属涂覆的织物、导电聚合物、导电垫等。导电金属包括Sn、Ni、Cu、Au等。导电金属还包括在诸如Cu、Zn、Al等的活泼金属上涂覆诸如Sn、Ni或Au之类的抗腐蚀金属。导电合金包括无机合金和诸如青铜、黄铜、不锈钢、或钯锡合金等的金属合金。金属涂覆的织物可以是具有任何抗腐蚀金属涂层的纺织品或非纺织品。导电垫包括布置在聚合物母料中的导电填料。电极210还应该由与电解液化学剂兼容的材料制成，以当使用多区域电极时最小化区域之间的串扰。例如，在电解液化学剂中稳定的金属能够最小化区域串扰。
当金属被用作电极210的材料时，其可以是固体片。可选地，为了提高对上层212或可选的副垫211的粘接力，电极210可以由金属丝网(如图5所示的电极510示出)或者被穿孔(如图6所示的电极610示出)。电极210也可以预备有如上所讨论的粘接促进剂，以提高对上层212或可选的副垫211的粘接力。被穿孔或由金属丝网形成的电极210还具有更大的表面积，其在处理期间进一步提高了衬底移除速率。
当电极210由金属丝网、穿孔金属片、或导电织物制成时，电极210的一侧可以层叠、涂覆或模制有穿透电极210中的开口的聚合物层以进一步提高对上层212或可选的副垫211的粘接力。当电极210由导电垫制成时，导电垫的聚合物母料可以对施加到上层212或可选的副垫211的粘接剂具有高亲合力或相互作用。
在处理垫组件106的电极210、可选的副垫211、和上层212中形成至少一个孔径220。该至少一个孔径220中的每个具有容纳接触组件134的尺寸和位置，其中接触组件134布置为从其通过。在一个实施例中，该至少一个孔径220是形成在处理垫组件106中心的单个孔径以容纳单个接触组件134。
接触组件134耦合到电源166。虽然在图2中，仅一个接触组件134示出为耦合到压板组件142上层114，但是任何数量的接触组件134可以被使用并能以任何数量的构造分布在压板组件142的上层114上。
图3和4示出了具有多个区域的电极的可选实施例的仰视图，该电极以有利地适用于此处描述的本发明的各种实施例。在图3中，电极310包括至少一个电介质隔板和至少两个导电元件。导电元件布置为在电极310的表面之上产生多个可独立偏压的区域。在图3所示的实施例中，电极310具有三个导电元件350、352、354，其通过电介质隔板390而互相电隔离以产生电极区域，即外电极区域324、中间电极区域326和内电极区域328。分别由虚线边界380示出的每个电极区域324、326、328可以被独立地偏压以允许衬底抛光轮廓被调整。在2002年9月16日递交的美国专利申请序列号No.10/244,697中描述了具有电极区域偏压控制的抛光方法的一个示例，其全文通过引用被结合于此。
虽然电极区域324、326、328和导电元件350、352、354示出为同心环，但是电极区域可以可选地构造为适应具体的抛光应用。例如，电极区324、326、328和/或导电元件350、352、354可以是直线的、弯曲的、同心的、渐开线的曲线，或者其他形状和方位也可以用于导电元件。电极区324、326、328和/或导电元件350、352、354可以在区域与区域之间具有基本相同的尺寸和形状，或者该尺寸和形状可以取决于所涉及的具体区域而不同。
图4描述了具有多个可独立偏压的电极区域的电极410的另一个实施例。在一个实施例中，电极410至少具有n个区域电极(示出的是三个电极4101、4102和4103)，其中n是2或更大的整数。电极4101、4102和4103每个包括各自的端子4021、4022和4023用于耦合到电源。电极4101、4102和4103通常被电介质隔板406或空气间隙分离，且每个电极形成独立的电极区域。电极4101、4102和4103可以包括一个或多个孔径420，以帮助与一个或多个导电元件(例如图1和2中所示的接触组件134)接口。
虽然前述针对的是本发明的解释性实施例，但是可以构思出本发明的其他和进一步的实施例而不偏离其基本范围，且其范围由所附权利要求确定。

Claims (29)

1.一种处理垫组件，包括：
上层，其具有中心孔径和处理表面；以及
电极，其具有耦合到所述上层的顶侧和与所述顶侧相对的底侧；
其中，形成为通过所述上层的第一组孔，以将所述电极暴露到所述处理表面，并且所述中心孔径形成为通过所述上层和所述电极。
2.如权利要求1所述的处理垫组件，其中所述电极由抗腐蚀导电金属制成。
3.如权利要求2所述的处理垫组件，其中所述抗腐蚀导电金属是Sn、Ni、Ti或Au。
4.如权利要求1所述的处理垫组件，其中所述电极由涂覆有抗腐蚀导电金属的导电金属制成。
5.如权利要求4所述的处理垫组件，其中所述抗腐蚀导电金属是Sn、Ni、Ti或Au。
6.如权利要求1所述的处理垫组件，其中所述电极由抗腐蚀导电合金制成。
7.如权利要求6所述的处理垫组件，其中所述抗腐蚀导电合金是青铜、黄铜、不锈钢或钯锡合金。
8.如权利要求1所述的处理垫组件，其中所述电极由金属涂覆的织物制成。
9.如权利要求1所述的处理垫组件，其中所述电极由具有导电填料的聚合物母料制成。
10.如权利要求2所述的处理垫组件，其中所述电极是固体片。
11.如权利要求2所述的处理垫组件，其中所述电极是金属丝网。
12.如权利要求2所述的处理垫组件，其中所述电极是穿孔片。
13.如权利要求2所述的处理垫组件，其中所述电极在面对所述上层的那侧上预备有粘接促进剂。
14.如权利要求13所述的处理垫组件，其中所述粘接促进剂是导电的。
15.如权利要求1所述的处理垫组件，其中所述电极是可渗透的。
16.如权利要求15所述的处理垫组件，其中将聚合物层施加到所述电极的所述底侧。
17.如权利要求16所述的处理垫组件，其中所述聚合物层穿透所述电极并至少部分地暴露在所述电极的所述顶侧上。
18.如权利要求1所述的处理垫组件，其中所述电极通过粘接剂耦合到所述上层。
19.如权利要求16所述的处理垫组件，其中用于将所述电极的所述顶侧耦合到所述上层的粘接剂可化学抵抗电解液。
20.如权利要求1所述的处理垫组件，其中所述上层是导电的。
21.如权利要求1所述的处理垫组件，其中所述上层是非导电的。
22.如权利要求21所述的处理垫组件，其中所述上层由聚氨酯制成。
23.如权利要求1所述的处理垫组件，其中所述电极还包括多个独立可偏压的电区域。
24.如权利要求23所述的处理垫组件，其中所述电区域还包括同心环。
25.如权利要求1所述的处理垫组件，还包括布置在所述电极与所述上层之间的副垫。
26.如权利要求1所述的处理垫组件，其中所述电极还包括：
第一导电区域；和
至少第二导电区域。
27.如权利要求26所述的处理垫组件，其中所述电极还包括：
第一导电元件，其包括所述第一导电区域；
第二导电元件，其包围所述第一导电元件并包括第二导电区域；和
第三导电元件，其包围所述第二导电元件并包括第三导电区域。
28.一种处理垫组件，包括：
上层，其具有中心孔径和处理表面；以及
抗腐蚀导电金属下层，其具有耦合到所述上层的顶侧和与所述顶侧相对的底侧，所述抗腐蚀导电金属下层具有多个横向分离的、独立可电偏压的区域；
其中，形成为通过所述上层的第一组孔，以将所述抗腐蚀导电金属下层暴露到所述处理表面，并且所述中心孔径形成为通过所述上层和所述抗腐蚀导电金属下层。
29.一种用于处理衬底的设备，包括：
a)压板组件，其具有顶表面；
b)布置在所述顶表面上的处理垫组件，所述处理垫组件包括：
i)上层，所述上层具有中心孔径和处理表面；和
ii)抗腐蚀导电金属下层，其具有耦合到上层的顶侧和与所述顶侧相对的底侧，所述抗腐蚀导电金属下层具有多个横向分离的、独立可电偏压的区域；其中，形成为通过所述上层的第一组孔，以将所述抗腐蚀导电金属下层暴露到所述处理表面，并且所述中心孔径形成为通过所述上层和所述抗腐蚀导电金属下层；
c)至少一个接触组件，其布置在所述中心孔径中并且定位为与布置在所述处理表面上的衬底的一侧接触；
d)电源，其适于将偏压施加在所述接触组件与所述抗腐蚀导电金属下层之间；和
e)承载头，其布置在所述处理垫组件上方，并且适于将所述衬底保持为抵靠所述处理垫组件并提供所述衬底与所述处理垫组件之间的相对运动的至少一部分。
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US7077721B2 (en) 2006-07-18
US20040121708A1 (en) 2004-06-24
JP2007512971A (ja) 2007-05-24
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TW200528220A (en) 2005-09-01
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US7344431B2 (en) 2008-03-18
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