CN1873917A - 形成方法以及包含钌和包含钨层的集成电路结构 - Google Patents
形成方法以及包含钌和包含钨层的集成电路结构 Download PDFInfo
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- CN1873917A CN1873917A CNA2006100925169A CN200610092516A CN1873917A CN 1873917 A CN1873917 A CN 1873917A CN A2006100925169 A CNA2006100925169 A CN A2006100925169A CN 200610092516 A CN200610092516 A CN 200610092516A CN 1873917 A CN1873917 A CN 1873917A
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- layer
- annealing
- tungsten nitride
- ruthenium
- nitrogen
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31637—Deposition of Tantalum oxides, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/590,795 | 2000-06-08 | ||
US09/590,795 US7253076B1 (en) | 2000-06-08 | 2000-06-08 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018109195A Division CN1270352C (zh) | 2000-06-08 | 2001-06-07 | 形成方法以及包含钌和包含钨层的集成电路结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1873917A true CN1873917A (zh) | 2006-12-06 |
CN100446178C CN100446178C (zh) | 2008-12-24 |
Family
ID=24363746
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100925169A Expired - Fee Related CN100446178C (zh) | 2000-06-08 | 2001-06-07 | 形成方法以及包含钌和包含钨层的集成电路结构 |
CNB018109195A Expired - Fee Related CN1270352C (zh) | 2000-06-08 | 2001-06-07 | 形成方法以及包含钌和包含钨层的集成电路结构 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018109195A Expired - Fee Related CN1270352C (zh) | 2000-06-08 | 2001-06-07 | 形成方法以及包含钌和包含钨层的集成电路结构 |
Country Status (7)
Country | Link |
---|---|
US (5) | US7253076B1 (zh) |
EP (1) | EP1297562B1 (zh) |
JP (1) | JP4216585B2 (zh) |
KR (1) | KR100746192B1 (zh) |
CN (2) | CN100446178C (zh) |
AU (1) | AU2001275398A1 (zh) |
WO (1) | WO2001095378A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681285A (zh) * | 2012-08-31 | 2014-03-26 | 爱思开海力士有限公司 | 包括无氟钨阻挡层的半导体器件及其制造方法 |
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- 2001-06-07 WO PCT/US2001/018585 patent/WO2001095378A2/en active Application Filing
- 2001-06-07 EP EP01942105.6A patent/EP1297562B1/en not_active Expired - Lifetime
- 2001-06-07 CN CNB2006100925169A patent/CN100446178C/zh not_active Expired - Fee Related
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CN103681285A (zh) * | 2012-08-31 | 2014-03-26 | 爱思开海力士有限公司 | 包括无氟钨阻挡层的半导体器件及其制造方法 |
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CN1270352C (zh) | 2006-08-16 |
JP2003536256A (ja) | 2003-12-02 |
EP1297562B1 (en) | 2013-08-07 |
JP4216585B2 (ja) | 2009-01-28 |
US20020055235A1 (en) | 2002-05-09 |
US20020037630A1 (en) | 2002-03-28 |
CN1436364A (zh) | 2003-08-13 |
EP1297562A2 (en) | 2003-04-02 |
US20030003697A1 (en) | 2003-01-02 |
US6833576B2 (en) | 2004-12-21 |
WO2001095378A2 (en) | 2001-12-13 |
US7253076B1 (en) | 2007-08-07 |
WO2001095378A3 (en) | 2002-06-13 |
CN100446178C (zh) | 2008-12-24 |
KR100746192B1 (ko) | 2007-08-03 |
AU2001275398A1 (en) | 2001-12-17 |
US20060076597A1 (en) | 2006-04-13 |
KR20030019418A (ko) | 2003-03-06 |
US6596583B2 (en) | 2003-07-22 |
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