CN1745453B - Method and apparatus for plasma treatment of surface in vacuum - Google Patents
Method and apparatus for plasma treatment of surface in vacuum Download PDFInfo
- Publication number
- CN1745453B CN1745453B CN2003801093200A CN200380109320A CN1745453B CN 1745453 B CN1745453 B CN 1745453B CN 2003801093200 A CN2003801093200 A CN 2003801093200A CN 200380109320 A CN200380109320 A CN 200380109320A CN 1745453 B CN1745453 B CN 1745453B
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- CN
- China
- Prior art keywords
- plasma
- substrate
- density distribution
- predetermined
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000009832 plasma treatment Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 238000009826 distribution Methods 0.000 claims abstract description 69
- 230000008569 process Effects 0.000 claims abstract description 24
- 238000009489 vacuum treatment Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 23
- 230000008859 change Effects 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000010897 surface acoustic wave method Methods 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 claims description 2
- 230000001276 controlling effect Effects 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 58
- 239000007789 gas Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000003325 tomography Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH2019/02 | 2002-11-29 | ||
CH20192002 | 2002-11-29 | ||
PCT/CH2003/000744 WO2004050943A2 (en) | 2002-11-29 | 2003-11-13 | Method for the treatment of surfaces with plasma in a vacuum and unit for the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1745453A CN1745453A (en) | 2006-03-08 |
CN1745453B true CN1745453B (en) | 2011-08-31 |
Family
ID=32399969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2003801093200A Expired - Fee Related CN1745453B (en) | 2002-11-29 | 2003-11-13 | Method and apparatus for plasma treatment of surface in vacuum |
Country Status (10)
Country | Link |
---|---|
US (2) | US7138343B2 (en) |
EP (1) | EP1565929B1 (en) |
JP (1) | JP4741241B2 (en) |
KR (1) | KR101177127B1 (en) |
CN (1) | CN1745453B (en) |
AT (1) | ATE375600T1 (en) |
AU (1) | AU2003277791A1 (en) |
DE (1) | DE50308371D1 (en) |
TW (1) | TWI325149B (en) |
WO (1) | WO2004050943A2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7264850B1 (en) * | 1992-12-28 | 2007-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for treating a substrate with a plasma |
US7138343B2 (en) * | 2002-11-29 | 2006-11-21 | Oc Oerlikon Balzers Ag | Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber |
DE102006036403B4 (en) * | 2006-08-02 | 2009-11-19 | Von Ardenne Anlagentechnik Gmbh | Process for coating a substrate with a defined layer thickness distribution |
US20090078199A1 (en) * | 2007-09-21 | 2009-03-26 | Innovation Vacuum Technology Co., Ltd. | Plasma enhanced chemical vapor deposition apparatus |
US8246794B2 (en) * | 2007-12-07 | 2012-08-21 | Oc Oerlikon Blazers Ag | Method of magnetron sputtering and a method for determining a power modulation compensation function for a power supply applied to a magnetron sputtering source |
CN103094048B (en) * | 2011-11-01 | 2015-08-19 | 凌嘉科技股份有限公司 | The device of movable adjustment magnetron |
US20170040140A1 (en) * | 2015-08-06 | 2017-02-09 | Seagate Technology Llc | Magnet array for plasma-enhanced chemical vapor deposition |
DE102018213534A1 (en) * | 2018-08-10 | 2020-02-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Device and method for producing layers with improved uniformity in coating systems with horizontally rotating substrate guidance |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6290825B1 (en) * | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
CN1341159A (en) * | 1999-02-19 | 2002-03-20 | 东京电子有限公司 | Plasma deposition method and apparatus with magnetic bucket and concentric plasma and material source |
US6413382B1 (en) * | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59175125A (en) * | 1983-03-24 | 1984-10-03 | Toshiba Corp | Dry etching device |
US4668365A (en) * | 1984-10-25 | 1987-05-26 | Applied Materials, Inc. | Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition |
US4858556A (en) * | 1986-09-15 | 1989-08-22 | Siebert Jerome F | Method and apparatus for physical vapor deposition of thin films |
JPH0629249A (en) * | 1991-10-08 | 1994-02-04 | Ulvac Japan Ltd | Plasma etching apparatus |
JP3362432B2 (en) * | 1992-10-31 | 2003-01-07 | ソニー株式会社 | Plasma processing method and plasma processing apparatus |
US5500077A (en) * | 1993-03-10 | 1996-03-19 | Sumitomo Electric Industries, Ltd. | Method of polishing/flattening diamond |
JP3250768B2 (en) * | 1993-09-28 | 2002-01-28 | アルプス電気株式会社 | Method for forming diamond-like carbon film, method for manufacturing magnetic head, and method for manufacturing magnetic disk |
US5529671A (en) * | 1994-07-27 | 1996-06-25 | Litton Systems, Inc. | Apparatus and method for ion beam polishing and for in-situ ellipsometric deposition of ion beam films |
US5945008A (en) * | 1994-09-29 | 1999-08-31 | Sony Corporation | Method and apparatus for plasma control |
JPH09256149A (en) * | 1996-03-22 | 1997-09-30 | Tokyo Electron Ltd | Sputtering device and sputtering method |
JP3744089B2 (en) * | 1996-12-02 | 2006-02-08 | 富士電機ホールディングス株式会社 | Magnetron sputtering film forming apparatus and film forming method |
JPH11176815A (en) * | 1997-12-15 | 1999-07-02 | Ricoh Co Ltd | End point judging method of dry etching and dry etching equipment |
US6312568B2 (en) * | 1999-12-07 | 2001-11-06 | Applied Materials, Inc. | Two-step AIN-PVD for improved film properties |
US6767475B2 (en) * | 2000-05-25 | 2004-07-27 | Atomic Telecom | Chemical-organic planarization process for atomically smooth interfaces |
EP1254970A1 (en) | 2001-05-03 | 2002-11-06 | Unaxis Balzers Aktiengesellschaft | Magnetron sputter source having mosaic target |
SE525231C2 (en) * | 2001-06-14 | 2005-01-11 | Chemfilt R & D Ab | Method and apparatus for generating plasma |
US20030164998A1 (en) * | 2002-03-01 | 2003-09-04 | The Regents Of The University Of California | Ion-assisted deposition techniques for the planarization of topological defects |
JP4728644B2 (en) | 2002-10-15 | 2011-07-20 | エリコン・トレーディング・アクチェンゲゼルシャフト,トリュープバッハ | Magnetron sputtering substrate manufacturing method and apparatus thereof |
US7138343B2 (en) * | 2002-11-29 | 2006-11-21 | Oc Oerlikon Balzers Ag | Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber |
-
2003
- 2003-11-13 US US10/536,204 patent/US7138343B2/en not_active Expired - Lifetime
- 2003-11-13 EP EP03769144A patent/EP1565929B1/en not_active Expired - Lifetime
- 2003-11-13 WO PCT/CH2003/000744 patent/WO2004050943A2/en active IP Right Grant
- 2003-11-13 KR KR1020057009745A patent/KR101177127B1/en active IP Right Grant
- 2003-11-13 JP JP2004555942A patent/JP4741241B2/en not_active Expired - Fee Related
- 2003-11-13 AU AU2003277791A patent/AU2003277791A1/en not_active Abandoned
- 2003-11-13 CN CN2003801093200A patent/CN1745453B/en not_active Expired - Fee Related
- 2003-11-13 DE DE50308371T patent/DE50308371D1/en not_active Expired - Lifetime
- 2003-11-13 AT AT03769144T patent/ATE375600T1/en not_active IP Right Cessation
- 2003-11-27 TW TW092133325A patent/TWI325149B/en not_active IP Right Cessation
-
2006
- 2006-10-06 US US11/539,218 patent/US7429543B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6290825B1 (en) * | 1999-02-12 | 2001-09-18 | Applied Materials, Inc. | High-density plasma source for ionized metal deposition |
CN1341159A (en) * | 1999-02-19 | 2002-03-20 | 东京电子有限公司 | Plasma deposition method and apparatus with magnetic bucket and concentric plasma and material source |
US6413382B1 (en) * | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
Also Published As
Publication number | Publication date |
---|---|
JP4741241B2 (en) | 2011-08-03 |
TWI325149B (en) | 2010-05-21 |
ATE375600T1 (en) | 2007-10-15 |
EP1565929A2 (en) | 2005-08-24 |
WO2004050943A3 (en) | 2004-08-26 |
JP2006508242A (en) | 2006-03-09 |
KR101177127B1 (en) | 2012-08-24 |
DE50308371D1 (en) | 2007-11-22 |
AU2003277791A1 (en) | 2004-06-23 |
KR20050085214A (en) | 2005-08-29 |
AU2003277791A8 (en) | 2004-06-23 |
CN1745453A (en) | 2006-03-08 |
US7429543B2 (en) | 2008-09-30 |
US20060054493A1 (en) | 2006-03-16 |
EP1565929B1 (en) | 2007-10-10 |
WO2004050943A2 (en) | 2004-06-17 |
US20070084715A1 (en) | 2007-04-19 |
US7138343B2 (en) | 2006-11-21 |
TW200415687A (en) | 2004-08-16 |
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Address after: Liechtenstein Barr Che J Patentee after: AIFA advanced technology Co.,Ltd. Address before: Liechtenstein Barr Che J Patentee before: OC OERLIKON BALZERS AG |
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