CN1741863A - Method for cleaning an article - Google Patents
Method for cleaning an article Download PDFInfo
- Publication number
- CN1741863A CN1741863A CNA038054426A CN03805442A CN1741863A CN 1741863 A CN1741863 A CN 1741863A CN A038054426 A CNA038054426 A CN A038054426A CN 03805442 A CN03805442 A CN 03805442A CN 1741863 A CN1741863 A CN 1741863A
- Authority
- CN
- China
- Prior art keywords
- fluid
- carbon dioxide
- pressure
- solvent
- solvent fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 125
- 238000004140 cleaning Methods 0.000 title claims abstract description 18
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 200
- 239000012530 fluid Substances 0.000 claims abstract description 156
- 239000002904 solvent Substances 0.000 claims abstract description 115
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 100
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 100
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 44
- 238000006467 substitution reaction Methods 0.000 claims description 42
- 239000012535 impurity Substances 0.000 claims description 41
- 239000007789 gas Substances 0.000 claims description 34
- 239000003344 environmental pollutant Substances 0.000 claims description 23
- 231100000719 pollutant Toxicity 0.000 claims description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000000746 purification Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052743 krypton Inorganic materials 0.000 claims description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 239000002738 chelating agent Substances 0.000 claims description 5
- 239000006184 cosolvent Substances 0.000 claims description 5
- 230000008676 import Effects 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 238000000149 argon plasma sintering Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 4
- 238000004821 distillation Methods 0.000 claims description 4
- 150000008282 halocarbons Chemical class 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims 4
- 238000004377 microelectronic Methods 0.000 claims 1
- 239000000356 contaminant Substances 0.000 abstract description 4
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 26
- 239000012071 phase Substances 0.000 description 15
- 238000012545 processing Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000004064 recycling Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229960001484 edetic acid Drugs 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007614 solvation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical class OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- VOPWNXZWBYDODV-UHFFFAOYSA-N Chlorodifluoromethane Chemical compound FC(F)Cl VOPWNXZWBYDODV-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- SIXOAUAWLZKQKX-UHFFFAOYSA-N carbonic acid;prop-1-ene Chemical compound CC=C.OC(O)=O SIXOAUAWLZKQKX-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000010725 compressor oil Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 150000005826 halohydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 1
- 229910000360 iron(III) sulfate Inorganic materials 0.000 description 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical class O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 description 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229960004065 perflutren Drugs 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
- C11D7/30—Halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- C11D2111/22—
Abstract
A method for cleaning an article includes the steps of contacting the article with a solvent fluid that includes carbon dioxide, whereby contaminants on the article dissolve in the solvent fluid and displacing the solvent fluid with a displacing fluid, that is other than carbon dioxide. In one aspect, the displacing fluid is at a temperature and pressure sufficient to prevent forming a second phase in the solvent fluid being displaced and at least a portion of the carbon dioxide is recycled to the article. In another aspect, the pressure of the solvent fluid is reduced prior to its displacement with the displacing gas.
Description
Related application
The application requires the U.S. Provisional Application No.60/346 of application on January 7th, 2002,507 rights and interests.Whole instructions of this application are incorporated herein by reference to.
Background of invention
In the production of pollution sensibility object, usually need to use one or more solvents to remove impurity on the object.Use liquid phase solvent traditionally.Recently, come into vogue and use supercritical carbon dioxide to replace liquid flux.Use supercritical carbon dioxide can reduce the useless stream of consumption, minimizing, minimizing discharging and/or the raising dissolution characteristics of water usually.In the semiconductor production field, supercritical carbon dioxide has been applied to a lot of aspects, for example fast light development (photo-resist developing), fast light peeling off (photo-resist stripping), clean wafers (wafer) and drying crystal wafer.
Normally, supercritical fluid is at its critical pressure and the fluid more than the temperature, and it has the character of similar gas and liquid.For example the solvent property of the supercritical fluid of supercritical carbon dioxide is decided according to the density of this fluid, and density depends on the Pressure/Temperature condition of fluid conversely.For many organic impurities, when the chamber that is used for cleaning (chamber) reduced pressure, because the pressure of fluid is from the overcritical lower pressure (for example atmospheric pressure) that is reduced to, the solvation character of carbon dioxide reduced.For highly purified clean operation, for example production of wafer or processing, or the manufacturing or the processing of optical element and other workpiece or substrate, when pressure reduced, the impurity that carbon dioxide solvent is precipitated out may influence wanted clean Surface.Therefore, it can be polluted, and reduce the effect of cleaning.
Therefore, need for example method of the object of wafer or other workpiece of a kind of cleaning, reduce or minimize the problems referred to above.
Summary of the invention
The present invention relates generally to a kind of method of cleaning objects, and this method contacts object by using the solvent fluid that comprises carbon dioxide, thereby removes the impurity of object, and replaces solvent liquid with substitution fluid.Substitution fluid is different from carbon dioxide.In one embodiment, object is a wafer, and replaces under the temperature and pressure that enough stops second phase of formation in the solvent fluid.In another embodiment, replace under the temperature and pressure that enough stops second phase of formation in the solvent fluid that will be replaced, carbon dioxide recirculates to fluid.
In the another one embodiment, the present invention relates to a kind of method that in workpiece cleaning process, reduces fixedness residue deposition.This method may further comprise the steps: under first pressure, with comprising the solvent fluid contact workpiece of carbon dioxide, thus by solvent fluid with the contaminant removal on the workpiece; Reduce the pressure of solvent fluid, make the fixedness residue be insoluble to solvent fluid; Under the pressure that reduces, replace solvent fluid with the place of gas beyond the removing carbon dioxide, thereby make workpiece be exposed to the time decreased of insoluble fixedness residue, so just reduced the deposition of insoluble fixedness residue on the workpiece.
In further embodiment, the present invention relates to a kind of method of replenishing cleaning fluid to container.This method may further comprise the steps: under first pressure, supply solvent fluid stream wherein contains carbon dioxide in the solvent fluid in the container that object is housed, and the pollutant on the object in can dissolution vessel; Substitution fluid stream is fed in the container, and wherein the pressure of substitution fluid stream is enough to replace the solvent fluid in the container, and substitution fluid is different from carbon dioxide; And discharge solvent fluid from container.
The present invention has lot of advantages.For example, the needs according in semiconductor production and other industry adopt method of the present invention can prepare the ultra-clean surface.Method of the present invention is economical, and can be easy to be incorporated in the current production devices.For example, on the one hand, method of the present invention is used the nitrogen place of gas, generally contains nitrogen line in equipment.In a specific embodiments, can use low pressure (for example, the nitrogen that 80-100psig) obtains.In another embodiment, reclaim used carbon dioxide, thereby reduce the consumption and the corresponding cost of carbon dioxide.In another embodiment, not needing to compress used fluid just can recycle.In addition, the present invention has considered to be present in the fixedness residue impurities in the quite highly purified carbon dioxide and has deposited the problem that is caused when the chamber depressurization by them.
Description of drawings
When Figure 1A-1C has illustrated the chamber depressurization that the object that contacts with carbon dioxide solvent is housed, the formation stage of second phase.
Fig. 2 A-2D has illustrated the method step of one embodiment of the invention.
Fig. 3 A-3E has illustrated the method step of another embodiment of the invention.
The detailed description of invention
In conjunction with the accompanying drawings, wherein the identical part of similar reference symbol representative in different figure by the following the preferred embodiments of the invention of describing in more detail, clearly illustrates aforementioned purpose, the feature and advantage with other of the present invention.Accompanying drawing needn't be drawn in proportion, and emphasis illustrates the present invention on principle.
The present invention relates generally to the production clean surface, for example required clean surface in semiconductor production or processing procedure.The present invention relates to remove, prevent or minimize pollutant and on wafer, deposit, for example comprise the wafer of one or more electric machines well known in the prior art, one or more integrated circuits or its composite set.Other workpiece also can use the present invention to handle, and comprises the assembly that is used for semiconductor production, for example, sputtering target etc., optical module, for example, optical lens, filter, frequency multiplication device, laser crystal, beam splitter, optics cavity, optical fiber, speculum or the like.Object is TV, vedeo-tape deck and camera component for example, and the element and other workpiece that are used for science and medical instrument, satellite assisted communication, space technology industry also can carry out processing described herein.
Object can comprise inorganic matter, for example silicon, silica, graphite or metal from any material manufacturing; Organic matter, for example polymer; Or by material inorganic and that the organic material combination is made.This clean method can be used for single body, or is used for cleaning simultaneously two or more objects.
The present invention relates to a kind of method of removing pollutant on the object or impurity, or the method for removing pollutant and impurity the environment around the object, for example, produce or processing procedure in set up the chamber that object is housed.This method can be the step in the bigger production operation, for example, the method for deposition or production film, photolithographic methods, engraving method, ion is implanted (ionimplantation) method, the chemical-mechanical planarization method, method of diffusion, fast light developing method (photo-resist development), the developing method of light-sensitive material, the clean method of opticator, the clean method of the assembly that space technology is used, fast light peeling off (photo-resiststripping) method, the chip cleaning method, wafer drying method, in degreasing method or the extracting method one step.
Pollutant is included in the organic and/or inorganic substances of not expecting on the end product.They can be solid, liquid or gas.Example comprises polymer, grease and other organic substance; Silicon; Carbon; And/or metal, and other impurity.They can be in object surfaces, or is distributed at least in the part of forming object materials.
Impurity can be produced by object self, comprises the wafer part of removing in the wafer processing procedure, or the fragment that produces in the etching process.Impurity also can be delivered on the object by process fluid.For example manufacturing or the used chemical compound of handled object also can remain in object surfaces, or are present in the treatment chamber of finishing processing.
The present invention is particularly suitable for removing fixedness residue (NVRs).In processing, at condition of high voltage and particularly be in or use carbon dioxide near under the critical or supercriticality, many NVRs are dissolved in the carbon dioxide.When pressure reduced, the density and the solvent property of carbon dioxide changed, and the NVRs precipitation generates common second phase with aerosol drops and/or solid particulate.Second mutually in, NVRs can influence object surfaces, thus with its pollution.
The example of fixedness residue includes, but are not limited to heavy organic matter, for example hydrocarbon (C for example
10+), heavy halohydrocarbon etc.
The source of NVRs comprises compressor oil, pigment, elastomeric material (have certain solubility in solvent, be present in usually in packing ring and the valve holder materials), is used for the fluid sealant of solvent supply circuit etc.NVRs can produce in the processing procedure of the workpiece of for example clean wafer.
NVRs also can bring by the used fluid contactant of production, processing or cleaning objects surface.
In semi-conductor industry, for example, carbon dioxide is used to fast light development, fast lightly peels off, clean wafer and drying crystal wafer.Contain weight concentration in the liquid CO 2 in bulk up to hundred ten the NVRs of (ppm) very much.The NVRs that contains about 0.15ppm (weight) in the carbon dioxide of some higher degree in the gas storage cylinder.
Even also having NVRs in the more highly purified carbon dioxide for the unacceptable amount of photo-process, photo-process requires end product to contain particulate less than the given particle diameter of specific quantity.In some production processes, for example, require gas to go up less than 100 particulates in some critical dimension (being typically 100 nanometers) of every standard cubic meter.The liquid CO 2 of the such one liter of higher degree of estimation vaporization (～10ppb) can obtain millions of NVR particulates.In order to reach such cleanliness levels, the purity of carbon dioxide must improve at least one thousand times than existing highest purity carbon dioxide.
Accompanying drawing 1A, 1B and 1C have illustrated the applying high voltage carbon dioxide, the formation of the second phase NVRs in cleaning course.Figure 1A has shown the chamber 10 that wafer 12 is housed.Chamber 10 is containers that container or the processing in semiconductor manufacturing facility for example or processing unit cross and form.Chamber 10 is designed to receive and preserves highly pressurised liquid, for example supercritical carbon dioxide (for example, in critical-temperature with more than the pressure, concrete at 31 ℃ and carbon dioxide more than the 1070 pounds/absolute square inch (psia)).Chamber 10 has the inlet and the outlet of adding process fluid well known in the prior art and other chemicals.The known adding and the method for emptying may be used to chamber 10.Example comprises use compressor, pump, air bleeding valve etc.
Shown in Figure 1A, under 2000 pounds of/square inch (psig) pressure, will fill carbon dioxide in the chamber 10.Under this pressure, the pollutant on the wafer is dissolved in the carbon dioxide solvent, and it is minimum that the concentration of second phase (insoluble) NVRs reaches.Situation when chamber 10 is reduced pressure lower pressure (for example 200psig) returns to atmospheric pressure then shown in Fig. 2 B, shown in Fig. 1 C, carbon dioxide reduces the solvation character of NVRs, forms second phase.The second phase NVRs in the chamber 10 can influence wafer, with its pollution.
In one embodiment, method of the present invention comprises: with the object of solvent fluid contact such as the wafer that contains carbon dioxide, thereby the pollutant on the object is dissolved in the solvent fluid.The carbon dioxide of preferred higher degree.In another embodiment, but method employed with bulk carbon dioxide of the present invention.
Normally, solvent fluid contains the carbon dioxide of at least 50 weight %.The preferred solvent fluid contains at least 75 weight %, more preferably at least 90 weight %, the most preferably carbon dioxide of weight 98% at least.
Solvent fluid can be 100% carbon dioxide.In other embodiments, solvent liquid contains at least a other component, for example cosolvent, surfactant or chelating agent.Can be separately or comprise: ammonia, halogenated hydrocarbons, hydrofluoric acid, sulfur dioxide etc. in conjunction with the example of the component that adds carbon dioxide.The example of other cosolvent, surfactant and/or chelating agent comprises: silane, hydrocarbon, for example methane, ethane, propane, butane, pentane, hexane, ethene and propylene; Halogenated hydrocarbons, for example tetrafluoromethane, chloro difluoromethane, sulfur hexafluoride and perfluoropropane; Inorganic matter, for example ammonia, helium, krypton, argon, and nitrogen oxide; Alcohols, for example ethanol, methyl alcohol or isopropyl alcohol; Propene carbonate; Atmospheric gas, for example nitrogen, hydrogen, ozone or oxygen; Water; Amine, for example azanol and alkanolamine; Acetone; Pyrrolidones, for example N-methyl pyrrolidone, N-ethyl pyrrolidone, N-hydroxyethyl pyrrolidones and N-cyclohexyl pyrrolidones; Acid amides, for example dimethylacetylamide or dimethyl formamide; Phenol and derivative thereof; Glycol ether; 2-Pyrrolidone; Dialkyl sulfone; Organic and inorganic acid and derivative thereof, for example hydrofluoric acid, hydrochloric acid, acetate, sulfuric acid, gallic acid or gallate; Tetra-alkyl ammonium hydroxide; Fluoram; Ammonium-tetramethyl fluoram; Alkali metal hydroxide; Tartrate; Phosphate; Ethylenediamine tetra-acetic acid (EDTA); The ammonia that has vulcanized sodium and ferric sulfate; And composition thereof.
Normally, the pollutant at for example NVRs can be dissolved under the situation of solvent fluid.Solvent fluid contains carbon dioxide.For example, solvent fluid contains the carbon dioxide that pressure is at least 800psig (pound/square inch).The preferred solvent fluid contains and is in or near its critical condition or be in supercritical carbon dioxide.
Carbon dioxide solvent can import container with the form of gas, liquid or supercritical phase.At internal tank, contact object with carbon dioxide solvent, so that remove impurity.Can remove impurity by physics or chemism, for example, carbon dioxide solvent can dissolved impurity; Impurity can be distributed to the carbon dioxide solvent from the material of forming object; Or impurity can react with carbon dioxide solvent, and impurity is removed from object.The process of removing also can be a mechanism, for example, can utilize the pressure and/or the temperature of carbon dioxide solvent, its specific volume (specificvolume) is increased and/or reduces, and produces from the stress of object division impurity.The removal of impurity can also realize by chemistry and mechanism combination.
Randomly, in order to improve chemistry and mechanism, also can stir carbon dioxide solvent.For example, by the concentration gradient that body surface is passed in increase, stirring can improve the speed of chemical removal effect (for example, dissolve, spread and reaction), thereby promotes chemical action to finish.Similarly, stirring can increase the removal speed of mechanical removal effect, owing to be stirred in and produce shearing force in the liquid, it can promote impurity to draw from body surface to remove.
Can also utilize the temperature of carbon dioxide solvent and/or the removal that pressure promotes impurity.The operation of these process conditions can cause carbon dioxide solvent to experience the phase change of one or many between gas phase, liquid phase and/or supercritical phase, and this phase change depends on whether institute's selection operation crosses over critical-temperature and/or pressure and the condensing pressure and/or the temperature of carbon dioxide solvent.Preferably carry out to improve those operations of Impurity removal.If several dissimilar impurity are arranged on object or in the object, can pass through the recycling carbon dioxide solvent of various treatment conditions, strengthen the removal of every type of impurity.When carbon dioxide solvent experienced these operations, the impurity of NVRs or removal can be dissolved in the solvent fluid and/or be deposited in outside the solvent fluid.
Randomly, rinse in the step in the centre, the solvent fluid that at least a portion contains pollutant can be replaced with novel solvent fluid or pure carbon dioxide, thereby impels used flow of solvent, removes extra impurity from the surface that is cleaned.
Described method is included under the temperature and pressure that forms second phase in the solvent fluid that enough preventions will be replaced, and replaces solvent fluid with the substitution fluid beyond the carbon dioxide, thereby pollutant is separated from wafer, realizes clean wafer.
For example, solvent liquid is replaced in chamber under its pressure, and need not be with part or all of chamber depressurization.If with chamber depressurization, pressure should be remained under the pressure of solvent fluid dissolving NVRs.
Substitution fluid can be gas, liquid or supercritical fluid.Suitable substitution fluid comprises inert gas, for example nitrogen, helium, argon gas or krypton gas, other gas, for example oxygen, or their any combination.Preferred nitrogen.In one embodiment of the invention, substitution fluid is a high-pure gas.In another embodiment, substitution fluid is the gas of ultra-high purity, for example has purity level or the industrial known purity level of all contaminants at parts per billion.The gas of high-purity and ultra-high purity, for example nitrogen etc. can have been bought on market.
Method of the present invention can be carried out continuously, or carries out flexibly in batches.
Each stage explanation of this embodiment of the present invention provides at Fig. 2 A-2D.
Fig. 2 A has shown the chamber 14 that wafer 12 is housed.Chamber 14 can be a chamber for example described above.In another embodiment, chamber 14 can be designed so that the new fluid that enters container carries out (for example mixing of certain degree with already present CO 2 fluid, the style of continuously stirred tank reactor (CSTR)), or the fluid that makes process can improve the replacement (for example, connector-style flows) of used solvent, impurity and NVRs.Preferably, in the process of replacing carbon dioxide solvent, impurity and NVRs, the geometry of chamber can make the contact-making surface minimum of object and impurity and NVRs.The fluid of chamber 14 is given row's mouth and can be adopted manner known in the art for row's mode.
Shown in Fig. 2 A, the carbon dioxide of the pollutant that contains dissolving of about 2000psig is housed in the chamber 14.
The pressure of inert gas is higher than the pressure of carbon dioxide in the chamber, and for example, the gas pressure that imports chamber chamber 14 is higher than 2000psig, shown in Fig. 2 B.Carbon dioxide is replaced from chamber 14 with dissolved impurity, shown in Fig. 2 C.The chamber 14 that will contain place of gas then is depressurized to atmospheric pressure, as shown in Fig. 2 D.
Can after using highly purified substitution fluid and/or carbon dioxide solvent to improve emptying, finally remain in the quantity of the impurity on the object, or pass through to increase the volume of used substitution fluid, so that replace carbon dioxide solvent, impurity and NVRs more completely.
In case solvent fluid, NVRs and impurity are replaced from container, just can stop to flow of substitution fluid, with vessel empty.
The carbon dioxide of replacing from chamber can be used as useless stream and drains, or other operation or the processing of introducing equipment.
In preferred embodiments, the fluid of replacing from chamber 14 can carry out purifying by for example fluid being imported one or more purification devices from chamber.Because (for example, 2000psig), therefore, the fluid of discharge can import purification devices to the pressure height of the fluid of discharging from chamber 14 usually, and does not need compression.Method such as the example of adaptable purifying process comprises distillation, absorption, absorption, chemical reaction, be separated.
The solvent fluid of replacing can be carried out purifying to NVRs, cosolvent, surfactant and chelating agent.In another embodiment, the fluid of generation can be further from substitution fluid, and for example purifies and separates goes out carbon dioxide in the nitrogen.The proper method of separating carbon dioxide comprises distillation from nitrogen.
In preferred embodiments, according to the applying date be the U.S. Patent application No 10/274,302 on October 17th, 2002, method of describing in " recycling of supercritical carbon dioxide " recycles, the instruction of this patent application is incorporated herein by reference to.
Substitution fluid also can recycling.If with nitrogen fluid as an alternative, because its expense, and can make the easier utmost point light weight of removal process, the recycling of nitrogen is just attractive especially.
In another embodiment, the present invention relates to a kind of method that in the workpiece cleaning course, reduces fixedness residue deposition.This method comprises uses the solvent fluid contact workpiece basically according to the method described above.This method comprises the pressure that reduces solvent fluid, thereby makes the pollutant such as NVRs can be dissolved in solvent fluid.This method also comprises under reduced pressure, replaces solvent fluid with above-mentioned substitution fluid, thereby makes workpiece be exposed to time decreased in the undissolved pollutant (for example NVRs), reduces on the workpiece the not deposition of dissolved contaminants (for example NVRs).
In one embodiment, the pressure of solvent fluid is reduced to less than about 1000psig.In another embodiment, pressure is reduced to less than 200psig.In another embodiment, the pressure of solvent fluid is reduced to the pressure that is lower than source nitrogen in the equipment or nitrogen line, for example, is lower than about 80-100psig.
Preferably, wafer is exposed to time among the undissolved NVRs less than about 30 seconds.More preferably, wafer was exposed to time among the undissolved NVRs less than 3 seconds.
Randomly, rinse in the step, use novel solvent fluid or pure carbon dioxide to replace at least a portion solvent fluid and undissolved pollutant in the centre.Rinsing step can be before or after chamber depressurization.Recycled carbon dioxide and optional place of gas according to the method described above.Recirculation comprises fluid is recycled to compression step before the purifier apparatus.
As above discuss, this method can be carried out continuously or substep carries out flexibly.
Each stage illustration of this embodiment of the present invention provides at Fig. 3 A-3E.Fig. 3 A has shown the aforesaid substantially chamber 14 that wafer 12 is housed.The carbon dioxide of about 2000psig is housed in the chamber 14.Shown in Fig. 3 B, the pressure of chamber 14 is reduced to 200psig.When pressure reduced, NVRs was precipitated out from solvent, formed second phase.Under the pressure of the solvent fluid that enough promotes 200psig, be introduced into chamber 14 such as the inert gas of nitrogen, shown in Fig. 3 C, thereby from chamber 14, replace the carbon dioxide and second impurity mutually, shown in Fig. 3 D.From chamber, replace carbon dioxide with second mutually impurity reduced wafer and be exposed to time under the undissolved NVRs, thereby reduced the sedimentation time of undissolved NVRs on wafer.Shown in Fig. 3 E, then chamber 14 is decompressed to atmospheric pressure.
In one embodiment, the present invention relates to a kind of method of producing the ultra-clean object.Term used herein " ultra-clean " is meant that the pollution of the substrate of every per square meter of surface area is lower than about 2000 particulates, and the effective diameter of the impurity of measuring by light scattering technique is greater than about 0.1 micron.Effective diameter is well known in the prior art greater than the light scattering method of about 0.1 micron particulate on the mensuration surface of solids.For example, suitable method is at Diaz, R.E. wait the people, " On-WaferMeasurement of Particles in Contamination-Free Manufacturing forSemiconductors and other Precision Products; " Contamination-FreeManufacturing for Semiconductors and other Precision Products, by R.P.Donovan (Marcell Dekker) editor, in the 79th page (2001) description is arranged.
This method is included in the chamber and contacts object with carbon dioxide solvent, thereby make the impurity on the object be dissolved in carbon dioxide solvent, and place of gas is fed in the chamber, reduce the time that object is exposed to fixedness residue in the carbon dioxide, thereby make the amount of impurities on the object reduce to about 2000 particulates of every per square meter of surface area, the effective diameter that wherein adopts each impurity that light scattering technique measures is greater than 0.1 micron.
In another embodiment, the present invention relates to a kind of method to container supply cleaning fluid.This method may further comprise the steps: under first pressure solvent fluid is added the container that object is housed, wherein solvent fluid contains carbon dioxide, it can dissolution vessel in insoluble pollutant on the object; Substitution fluid is added container, and wherein substitution fluid has enough pressure and this substitution fluid of replacing solvent from container and is different from carbon dioxide; With solvent fluid emptying from container.
The fluid of Pai Chuing can be purified from container, purifying according to the method described above basically, and carbon dioxide can use in the container again.Carbon dioxide can adopt known method to compress before turning back to container.
In one embodiment, the pressure of substitution fluid is the same with first pressure at least high.In one embodiment, the pressure of substitution fluid is no more than about 100psi, greater than the pressure of its solvent fluid of replacing.In another embodiment, first pressure is 1000psig at least.Can under the pressure that is higher than the purification unit operating pressure, discharge fluid from container.
In another embodiment,, discharge solvent fluid from container, under the pressure that enough promotes solvent fluid, replace fluid being lower than under first pressure condition.
Equivalence
Though show especially and described the present invention with reference to the preferred embodiments of the invention, those skilled in the art will appreciate that and to do the change on various forms and the details and not depart from the scope that the present invention is contained by appending claims the present invention.
Claims (49)
1, a kind of method of clean wafer pollutant may further comprise the steps:
A), thereby remove pollutant on the wafer by solvent fluid with comprising the solvent fluid contact wafer of carbon dioxide; With
B) replace solvent fluid with the substitution fluid that is different from carbon dioxide, under the temperature and pressure that enough stops formation second phase in the solvent fluid, replace, thereby pollutant is separated from wafer, come clean wafer thus.
2, a kind of method of cleaning objects pollutant may further comprise the steps:
A) usefulness comprises that the solvent fluid of carbon dioxide contacts described object, thereby the pollutant on the object is dissolved in the solvent fluid;
B) replace solvent fluid with the substitution fluid that is different from carbon dioxide, under the temperature and pressure that enough stops formation second phase in the solvent fluid, replace, thereby pollutant is separated from object, come clean wafer thus;
C) at least a portion carbon dioxide is recycled on object.
3, according to the method for claim 2, wherein solvent fluid also comprises at least a annexing ingredient that is selected from cosolvent, surfactant and chelating agent.
4, according to the method for claim 3, wherein said annexing ingredient is selected from ammonia, halogenated hydrocarbons, hydrofluoric acid, hydrochloric acid, sulfur dioxide and any combination thereof.
5, according to the method for claim 2, wherein substitution fluid is gas, liquid or supercritical fluid.
6, according to the method for claim 5, wherein substitution fluid is a ultra-high purity gas.
7, according to the method for claim 5, wherein substitution fluid is selected from nitrogen, argon gas, krypton gas, helium, oxygen and any combination thereof.
8, according to the method for claim 7, wherein substitution fluid is a nitrogen.
9, according to the method for claim 2, wherein said object is selected from wafer, optical element, space flight element and is used for the assembly of semiconductor production.
10, according to the method for claim 2, wherein said object is the wafer that comprises at least a integrated circuit or at least a microelectronic mechanical apparatus.
11, according to the method for claim 2, wherein said object is arranged in chamber.
12, according to the method for claim 11, wherein carbon dioxide is in or surpasses critical condition.
13, according to the method for claim 11, wherein solvent fluid is imported in the chamber, and comprises that pressure is at least 800 pounds/square inch carbon dioxide.
14,, wherein comprise the purification process that is selected from distillation, absorption, absorption and any combination thereof in the recirculation of the carbon dioxide that is replaced of at least a portion according to the method for claim 11.
15, according to the method for claim 14, wherein the carbon dioxide that is replaced of at least a portion is not compressed before purification process.
16, a kind of method that reduces fixedness residue deposition in workpiece cleaning process may further comprise the steps:
A) under first pressure, use the solvent fluid contact workpiece, comprise carbon dioxide in the solvent fluid, thereby remove pollutant on the workpiece by solvent fluid;
B) pressure of reduction solvent fluid is insoluble to solvent fluid thereby the fixedness residue is become; With
C) under reduced pressure, replace solvent fluid, thereby make workpiece be exposed to the time decreased of undissolved fixedness residue, reduce the deposition of undissolved fixedness residue on workpiece with the place of gas that is different from carbon dioxide.
17, according to the method for claim 16, wherein solvent fluid also can contain at least a annexing ingredient that is selected from cosolvent, surfactant and chelating agent.
18, according to the method for claim 17, wherein said annexing ingredient is selected from ammonia, halogenated hydrocarbons, hydrofluoric acid, hydrochloric acid, sulfur dioxide and any combination thereof.
19, according to the method for claim 16, wherein substitution fluid is gas, liquid or supercritical fluid.
20, according to the method for claim 19, wherein substitution fluid is a ultra-high purity gas.
21, according to the method for claim 19, wherein substitution fluid is selected from nitrogen, argon gas, krypton gas, helium, oxygen and any combination thereof.
22, according to the method for claim 21, wherein substitution fluid is a nitrogen.
23, according to the method for claim 16, wherein said object is selected from wafer, optical element, space flight element and is used for the assembly of semiconductor production.
24, according to the method for claim 16, wherein said object is the wafer that comprises at least a integrated circuit or at least a microelectromechanical systems.
25, according to the method for claim 16, wherein said object is arranged in chamber.
26, according to the method for claim 25, wherein the pressure of solvent fluid is reduced to and is lower than about 1000 pounds/square inch.
27, according to the method for claim 26, wherein the pressure of solvent fluid is less than about 200psig.
28, according to the method for claim 25, wherein the carbon dioxide that is replaced from chamber of at least a portion is recycled in the chamber.
29, according to the method for claim 28, wherein said recirculation comprises the purification process that is selected from distillation, absorption, absorption and combination thereof.
30,, also further be included in the carbon dioxide that compresses purifying in the recirculation inlet chamber before according to the method for claim 29.
31, according to the method for claim 16, wherein object was exposed to time of fixedness residue of deposition less than 30 seconds.
32, according to the method for claim 31, wherein object was exposed to time of fixedness residue of deposition less than 3 seconds.
33, a kind of method of producing the ultra-clean object may further comprise the steps:
A) in chamber, contact object with carbon dioxide solvent, thus impurity on the object is dissolved in the carbon dioxide solvent and
B) place of gas with ultra-high purity imports in the chamber, to reduce the time that object is exposed to the fixedness residue that is present in the carbon dioxide solvent, the amount of impurities of every square metre of surface area is reduced to less than about 2000 particulates on the object thereby make, wherein the effective diameter of each impurity is greater than 0.1 micron, and this diameter is measured by light scattering technique.
34, a kind of cleaning fluid is added the method for container, may further comprise the steps:
A) under first pressure, solvent fluid stream added and be equipped with in the container of object, comprise carbon dioxide in the solvent fluid, and the pollutant on the object in can dissolution vessel;
B) substitution fluid is added container, wherein substitution fluid has and enough replaces the pressure of solvent fluid from container, and substitution fluid is different from carbon dioxide; With
C) with solvent fluid emptying from container.
35, according to the method for claim 34, wherein the pressure of substitution fluid is the same with first pressure at least high.
36, according to the method for claim 35, wherein first pressure is higher than about 1000 pounds/square inch.
37, according to the method for claim 34, wherein the solvent fluid of discharging from container imports purification devices.
38, according to the method for claim 37, the pressure of wherein discharging solvent fluid from container is higher than the operating pressure of purification unit.
39, according to the method for claim 38, wherein compressed from the carbon dioxide that purification unit obtains, be recycled in the container.
40, according to the method for claim 37, wherein substitution fluid is selected from nitrogen, argon gas, helium, krypton gas, oxygen and any combination thereof.
41, according to the method for claim 40, wherein substitution fluid is a nitrogen.
42, according to the method for claim 34, wherein the pressure of substitution fluid stream is no more than about 100 pounds/square inch, is higher than the pressure of its solvent fluid of replacing.
43,, wherein solvent fluid is discharged from container being lower than under second pressure of first pressure, and under the same with second pressure at least high pressure, substitution fluid is imported in the container according to the method for claim 34.
44, according to the method for claim 43, wherein the solvent fluid that is discharged from the container is imported purification unit.
45, according to the method for claim 44, wherein discharge the operating pressure of the pressure of solvent fluid greater than purification unit from container.
46, according to the method for claim 44, wherein be compressed, and be recycled in the container from the carbon dioxide that purification unit obtains.
47, according to the method for claim 43, wherein substitution fluid is selected from nitrogen, argon gas, helium, krypton gas, oxygen and any combination thereof.
48, according to the method for claim 46, wherein substitution fluid is a nitrogen.
49, according to the method for claim 43, wherein the pressure of substitution fluid is no more than about 100 pounds/square inch, is higher than the pressure of its fluid of being replaced from container.
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| JP (1) | JP2005515619A (en) |
| KR (1) | KR20040073548A (en) |
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| US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
| AU742586B2 (en) * | 1997-05-30 | 2002-01-10 | Micell Technologies | Surface treatment |
| US6454869B1 (en) * | 2001-06-27 | 2002-09-24 | International Business Machines Corporation | Process of cleaning semiconductor processing, handling and manufacturing equipment |
-
2003
- 2003-01-07 JP JP2003557723A patent/JP2005515619A/en active Pending
- 2003-01-07 KR KR10-2004-7010594A patent/KR20040073548A/en not_active Application Discontinuation
- 2003-01-07 CN CNA038054426A patent/CN1741863A/en active Pending
- 2003-01-07 WO PCT/US2003/000529 patent/WO2003057377A1/en active Application Filing
- 2003-01-07 CA CA002472478A patent/CA2472478A1/en not_active Abandoned
- 2003-01-07 EP EP03729378A patent/EP1472017A4/en not_active Withdrawn
- 2003-01-07 AU AU2003235748A patent/AU2003235748A1/en not_active Abandoned
- 2003-01-08 TW TW092100342A patent/TWI291200B/en not_active IP Right Cessation
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103068496A (en) * | 2010-08-06 | 2013-04-24 | 英派尔科技开发有限公司 | Supercritical noble gases and cleaning methods |
| US9238787B2 (en) | 2010-08-06 | 2016-01-19 | Empire Technology Development Llc | Textile cleaning composition comprising a supercritical noble gas |
| CN103068496B (en) * | 2010-08-06 | 2016-04-13 | 英派尔科技开发有限公司 | Overcritical inert gas and cleaning method |
| CN108854556A (en) * | 2017-05-16 | 2018-11-23 | 东京毅力科创株式会社 | Liquid filter humidity method |
| CN108598019A (en) * | 2018-04-17 | 2018-09-28 | 德淮半导体有限公司 | Wafer cleaning equipment and its cleaning method |
| CN111744870A (en) * | 2020-06-24 | 2020-10-09 | 中国科学院苏州纳米技术与纳米仿生研究所广东(佛山)研究院 | Cleaning method for semiconductor device after gold-tin soldering |
| CN114078692A (en) * | 2022-01-07 | 2022-02-22 | 浙江大学杭州国际科创中心 | Wafer cleaning method and wafer cleaning equipment |
| CN114078692B (en) * | 2022-01-07 | 2024-02-20 | 浙江大学杭州国际科创中心 | Wafer cleaning method and wafer cleaning equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2472478A1 (en) | 2003-07-17 |
| WO2003057377A1 (en) | 2003-07-17 |
| JP2005515619A (en) | 2005-05-26 |
| EP1472017A1 (en) | 2004-11-03 |
| TWI291200B (en) | 2007-12-11 |
| TW200412631A (en) | 2004-07-16 |
| EP1472017A4 (en) | 2007-03-21 |
| AU2003235748A1 (en) | 2003-07-24 |
| KR20040073548A (en) | 2004-08-19 |
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