CN1729310B - Transparent conductive film for flat panel displays - Google Patents
Transparent conductive film for flat panel displays Download PDFInfo
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- CN1729310B CN1729310B CN2003801071748A CN200380107174A CN1729310B CN 1729310 B CN1729310 B CN 1729310B CN 2003801071748 A CN2003801071748 A CN 2003801071748A CN 200380107174 A CN200380107174 A CN 200380107174A CN 1729310 B CN1729310 B CN 1729310B
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- composite membrane
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- palladium
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
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- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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Abstract
Transparent conductive films for flat panel displays and methods for producing them are disclosed. In general, a method according to the present invention comprises: (1) providing a flexible plastic substrate; (2) depositing a multi-layered conductive metallic film on the flexible plastic substrate by a thin-film deposition technique to form a composite film, the multi-layered conductive metallic film comprising two layers of an alloy selected from the group consisting of indium cerium oxide (InCeO) and indium tin oxide (ITO) surrounding a layer of an alloy of silver, palladium, and copper (Ag/Pd/Cu); and (3) collecting the composite film in continuous rolls. Typically, the thin-film deposition technique is DC magnetron sputtering. Another aspect of the invention is a composite film produced by a method according to the present invention. Still another aspect of the invention is a composite film comprising a multilayered film as described above formed on a flexible plastic substrate, wherein the composite film has a combination of properties including: transmittance of at least 80% throughout the visible region; an electrical resistance of no greater than about 10 ohm/square; a root-mean-square roughness of no greater than about 2.5 nm; and an interlayer adhesion between the multi-layered metallic film and the remainder of the composite film that is sufficiently great to survive a 180 DEG peel adhesion test.
Description
Background of invention
Technical field:
The present invention relates generally to be used for flat-panel monitor, solar panel, radiation (emissive backlight) backlight structure and so on device transparency conducting layer (transparent conductivelayer, TCL).
Background technology
Liquid-crystal display (LCD) is a kind of flat-panel monitor that is used for various electronic installations.Usually, LCD comprises two polarization material thin plates, has liquid crystal solution between these two polarization material thin plates.Every polarization material thin plate generally includes glass or transparent plastic substrate; Liquid crystal (LC) is used as photoswitch.Usually be shaped on transparency electrode in the substrate, these transparency electrodes are normally made by tin indium oxide (ITO) or other conductive metal layer, therein coupling electricity " driving " signal.The caused electric field of actuate signal can cause phase change or the change of state in the LC material, and LC shows different reflective character according to its phase place or state.
Liquid crystal may be nematic liquid crystal, smectic liquid crystal or cholesteryl liquid crystal, and this depends on molecular arrangement.A twisted nematic unit is made of two boundary plates (normally sheet glass or plastic plate), each all has transparent conducting coating (for example ITO or other conductor), the barrier sheet in this unitary gap of a plurality of controls, two crossed-polarizer (polarizer and analyzer) as electrode, and nematic liquid crystalline material.Liquid crystal orientation half-twist in Twisted Nematic LCD.In super-twist nematic liquid crystal display, then adopt rotation up to 270 °.This extra rotation has this liquid crystal and firmly gets many voltage-maximum brightness response, also expanded the angle that can watch this indicating meter before indicating meter heavy losses contrast gradient.Cholesteryl liquid crystal (CLC) indicating meter is (mean do not need backlight) of reflection-type normally, and can work under the situation of not using polarized film or colour filter." cholesteryl liquid crystal " is meant that the sort of pitch-row is than twisted nematic liquid crystals and the thinner liquid crystal of super-twist nematic liquid crystal.The main body nematic liquid crystal obtains because cholesteryl liquid crystal is normally by adding chiral reagent, so cholesteryl liquid crystal is also sometimes referred to as " Chinrally nematic liquid crystal ".Cholesteryl liquid crystal can be used to provide bistable state and multistable indicating meter, and therefore these bistable states and multistable indicating meter do not need the successive drive current to keep display image, thereby reduced power consumption significantly owing to have non-volatile " storage " characteristic.Ferroelectrics liquid crystal (FLCs) uses the liquid crystal material with chiral molecules of arranging with smectic C type, and reason is that the helical nature of these molecules allows the microsecond switch time of response, and this makes FLC be particularly suitable for sophisticated display.The ferroelectrics liquid crystal (SSFLC) of surface-stable applies controlled pressure by using sheet glass, and this has suppressed molecular spiral, and makes switching time faster even.
Some known LCD devices comprise the transparency conducting layer that is stacked and placed on the chemical milling on the substrate of glass.For example, referring to No. the 5th, 667,853, the United States Patent (USP) of authorizing people such as Fukuyoshi, this patent is incorporated into herein as a reference.But the general control that is difficult to is handled in chemical milling, especially for plastic film.This processing can not be suitable for making these films with the successive roller to roller mode on plastic-substrates well.
The alternative technique of display that some LCD (LCD that for example can be used for flat-panel monitor) arranged.Famous example is organic or polymer light-emitting devices (OLED) or (PLED), it is made of several layers, and wherein each in these layers is made by a kind of organic materials, can make this organic materials electroluminescent by apply voltage on this device.The OLED device is a veneer sheet that forms in substrate (for example glass or plastic polymer) normally.The luminescent layer of cold light organic solid and adjacent semiconductor layer are sandwiched between anode and the negative electrode.Semiconductor layer may be that the hole is injected and electron injecting layer.PLED can be regarded as the subspecies of OLED, and wherein the cold light organic materials is a polymkeric substance.Luminescent layer can be selected from any in most of luminous organic solids, for example, is suitable for fluorescigenic polymkeric substance or chemiluminescent organic compound.Such compound and polymkeric substance comprise oxine thing metal cation salt, trivalent metal quinoline thing complex compound, the quinoline thing complex compound of trivalent metal bridge joint, the bivalent metallic ion complex of Schiff base, tin (IV) metal complex, metal acetylacetonates complex compound, in conjunction with organic ligand such as 2-picolyl ketone, the quinaldine based ketone of 2-(quinaldyllcetones), or the metal bidentate ligand complex compound of 2-(neighbour-phenoxy group) pyridone, diphosphonate (bisphosphonates), divalent metal dicyano two sulphur synthetic fibre (maleonitriledithiolate) complex compounds, the molecule charge transfer complex, rare earth blended inner complex, (5-hydroxyl) quinoxaline metal complex compound, three quinoline aluminums, and polymkeric substance, for example poly-(right-phenylacetylene), poly-(dialkoxy phenylacetylene), poly-(thiophene), poly-fluorenes, poly-(phenylene), poly-(phenylacetylene), poly-(aniline), poly-(3-alkylthrophene), poly-(3-octyl group thiophene), and poly-(N-vinylcarbazole).When between negative electrode and anode, applying a potential difference, be injected in the luminescent layer from the electronics of electron injecting layer with from the hole of hole injection layer; Their recombine and emitting beam.Following United States Patent (USP) has been described OLED and PLED, and all these patents are incorporated into herein as a reference: the United States Patent (USP) the 5th, 707 of authorizing people such as Forrest, No. 745, authorize people's such as Forrest United States Patent (USP) the 5th, 721, No. 160, authorize people's United States Patent (USP)s the 5th, 757 such as Forrest, No. 026, authorize people's such as Bulovic United States Patent (USP) the 5th, 834, No. 893, authorize people's such as Thompson No. the 5th, 861,219, United States Patent (USP), authorize people's such as Tang United States Patent (USP) the 5th, 904, No. 916, authorize people's such as Thompson United States Patent (USP) the 5th, 986, No. 401, authorize people's such as Forrest United States Patent (USP) the 5th, 998, No. 803, authorize people's such as Burrows No. the 6th, 013,538, United States Patent (USP), authorize people's such as Bulovic United States Patent (USP) the 6th, 046, No. 543, authorize people's such as Tang United States Patent (USP) the 6th, 048, No. 573, authorize people's such as Burrows United States Patent (USP) the 6th, 048, No. 630, authorize people's such as Tang No. the 6th, 066,357, United States Patent (USP), authorize people's such as Forrest United States Patent (USP) the 6th, 125, No. 226, authorize people's such as Hung United States Patent (USP) the 6th, 137, No. 223, authorize people's such as Thompson United States Patent (USP) the 6th, 242, No. 115, and No. the 6th, 274,980, United States Patent (USP) authorizing people such as Burrows.
In a typical matrix address luminous display unit, a large amount of light-emitting devices is formed in the single substrate and with a kind of grid pattern of rule and arranges in groups.Activation can be carried out according to row or column, perhaps utilizes independently negative electrode and anode path and carries out in an activated matrix.The manufacturing of OLED normally at first deposits a transparency electrode in substrate, and its patterning is become a plurality of electrode parts.Then, the one or more organic layers of deposition on above-mentioned transparency electrode.On electrode layer, can form a metal electrode.For example, authorize in people's such as Forrest No. the 5th, 703,436, the United States Patent (USP), transparent indium tin oxide (ITO) is used as hole injecting electrode, and the Mg-Ag-ITO electrode layer then is used for electronics and injects, and this patent is incorporated herein by reference herein.
Make the existing method of this class film and still can not successfully on flexible substrates, make this class film, and the characteristic that the film of being produced is had need, for example high optical transmittance, low resistance and the stability of temperature and humidity with successive technology.
For example, the PCT publication No. WO 99/36261 that announces, also incorporates into by reference the people such as Choi (Polaroid Corp.) of this paper on July 22nd, 1999 has described at polymkeric substance (Arton substrate) and has gone up deposition ITO/Au/Ag/Au/ITO multilayer film.In this multilayered structure, the thickness of Ag layer is 10-15nm, and the thickness of two ITO layers is 35-50nm.Compare with the ITO/Ag/ITO multilayer film, the Au/Ag/Au interlayer is used as conductive layer in multilayered structure, and because anti-sealing of the Au layer of 1-1.5nm or oxygen enter the Au/Ag interface zone, thereby shown the enhanced solidity to corrosion.It was reported that the surface resistivity of ITO/Au/Ag/Au/ITO film is less than 10 Ω/square (Ω/square), optical transmittance is greater than 80%.Yet, the deposition method of these multilayer films than the deposition method complexity of ITO/Ag/ITO film many.
Authorize people such as Fukuyoshi and incorporate this paper United States Patent (USP) the 5th as a reference herein into, 667, the formation of InCeO/Ag/InCeO film has been described for No. 853, in the InCeO/Ag/InCeO film, the thickness of Indium sesquioxide cerium (InCeO or " ICO ") layer is about 35-50nm, and the thickness of Ag layer is about 10-15nm.The deposition of InCeO film is undertaken by sputtering target, and this target then is by with 10-30%CeO
2Be doped to In
2O
3In form.Cerium can stop the diffusion of Sauerstoffatom from the InCeO film to the InCeO/Ag interfacial layer effectively.On the other hand, the Ag layer is actual to comprise the Au of 1 atomic percent and the Cu of 0.5 atomic percent, thereby has strengthened the stability of the Ag atom in the Ag layer.It was reported that the design of the chemical composition of InCeO and Ag layer has improved the structural stability of InCeO/Ag/InCeO film effectively.The InCeO/Ag/InCeO film shown 3-5 Ω/square low surface resistivity and greater than 90% high optical transmittance.The deposition of InCeO/Ag/InCeO film also is disclosed in No. the 6th, 249,082, the United States Patent (USP) authorizing people such as Fulcuyoshi, quotes by this and incorporates the content of this patent into this paper.Yet the deposition of these films only can be carried out in the nonbreakable glass substrate.This invention is not used in the actual manufacturing of information display.
Making the film of other method of this class film and manufacturing describes in following document to some extent: the United States Patent (USP) the 4th of authorizing people such as Chiba, 166, No. 876, authorize No. the 4th, 234,654, the United States Patent (USP) of Teijin, authorize people's such as Kawazoe United States Patent (USP) the 4th, 345, No. 000, authorize people's such as Kawazoe United States Patent (USP) the 4th, 451, No. 525, authorize the United States Patent (USP) the 4th, 936 of Nakamura, No. 964, authorize people's such as Kolpe No. the 5th, 178,957, United States Patent (USP), authorize people's such as Hanada United States Patent (USP) the 6th, 171, No. 663, No. 2001/0050222, people's such as Choi U.S. published patent application US, people's such as Staral PCT patent publication No. WO 98/12596, the European patent publication EP 1041644 of Cheung, European patent publication EP 1155818, and above-mentioned all patents or patent application are quoted by this at this and are incorporated this paper into.
United States Patent (USP) the 5th, 667, disclosed technology has adopted to be clipped between the two-layer Indium sesquioxide cerium (InCeO) in No. 853 silver (Ag) or silver-au-alloy (Ag/Au).When Ag or Ag/Au alloy are exposed in the air and exist under the situation that power and water presses, Ag or Ag/Au alloy are to oxidation-sensitive.Under these conditions, this metal is easy to diffusion.This can cause electrical short or visual stain, thus the outward appearance of infringement indicating meter.The use of InCeO layer is a kind of improvement, makes that Ag or Ag/Au structure is stable more and makes whole layer transparent.Yet in order to be used for flat-panel monitor, electrode need be patterned by etching.There is the edge on limit just can expose Ag or Ag/Au metal.Protect these metals by some way unless make, otherwise oxidation or corrosion can be from this positions.Therefore, need a kind of more stable structure that is used for flat-panel monitor.
In addition, Furukawa Metal company (Tokyo) has developed a kind of silver alloy, this alloy even still anticorrosive after 24 hours in being dipped in salt solution.This alloy (APC) is the silver (silver 98%, palladium 0.5% and copper 1.5%) that has a small amount of palladium and copper.Current being used to of this material carried out metalized to digital video disk (DVD) or compact disk (CD), to improve reflectivity.This application requiring is anti-oxidant in the lifetime at DVD or CD.Use this alloy to combine, optical transparence is provided and has improved even the stability of the nesa coating under the mal-condition of wet etching with zone of oxidation.
Therefore, for flat-panel monitor, also need a kind of oxidation and corrosive avoided to improve structure.
Summary of the invention
One aspect of the invention is a kind of method that is used to form composite membrane.Usually, a kind of method that is used to form composite membrane according to the present invention comprises:
(1) provides a flexible plastic substrates;
(2) pass through film deposition techniques, successive sedimentation multilayer conductive metallic membrane on this flexible plastic substrates, this multilayer conductive metallic membrane comprises two alloy layers, its interalloy is selected from Indium sesquioxide cerium (InCeO) and tin indium oxide (ITO), and these two layers surround the made individual layer of alloy by silver, palladium and copper (Ag/Pd/Cu[APC]); With
(3) this composite membrane is collected in the successive roller.
Preferably, silver, palladium and copper alloy comprise about 98% silver, 0.5% palladium and 1.5% copper.
Above-mentioned film deposition techniques can be sputter, ion beam depositing, chemical vapour deposition, ion beam enhanced depositing and laser ablation deposition (laser ablation deposition).A kind of preferred film deposition techniques is DC magnetron (DC magnetron) sputter.
Typically, dc magnetron sputtering is to carry out in a kind of atmosphere that comprises argon and optional oxygen.The concentration of oxygen can be changed, to optimize the character of the film that is being deposited.
This method can further comprise the following steps: to clean with plasma body the surface of flexible plastic substrates before the film deposition.This method also can further comprise a post-depositional annealing steps.
Typically, flexible plastic substrates is polyethylene terephthalate (PET), naphthalic acid polyvinyl ester (PEN), polyethersulfone (PES), polycarbonate (PC), polysulfones, resol, Resins, epoxy, polyester, polyimide, polyether ester, polyetheramides, rhodia, aliphatic polyurethane, polyacrylonitrile, tetrafluoroethylene, poly(vinylidene fluoride), poly-(Methyl Methacrylate) or aliphatics or cyclic polyolefin.Aliphatic poly alkene is including but not necessarily limited to high density polyethylene(HDPE) (HDPE), new LDPE (film grade) (LDPE) and comprise the polypropylene of orientation polypropylene (OPP).Cyclic polyolefin is including but not necessarily limited to poly-(two (cyclopentadiene)).A kind of preferred flexible plastic substrates is cyclic polyolefin or polyester.Can utilize a kind of hard coat to strengthen this flexible plastic substrates.Typically, this hard coat is a kind of acrylic acid coatings.
Another aspect of the present invention is by means of the formed composite membrane of the method according to this invention.Typically, composite membrane formed according to the present invention has excellent character, comprises high optical transmittance, low resistance, high surface smoothness, is exposed to high stability in hot and humid, cohesive force and wet method and dry etching ability between high level.
Another aspect of the present invention is a kind of composite membrane of novelty, and it comprises a three-layered metal film that applies or be deposited on the flexible plastic substrates, and wherein the bulk properties of this composite membrane comprises: the optical transmittance in whole viewing area is at least 80%; Resistivity be not more than about 20 Ω/square, preferably be not more than about 10 Ω/square; R.m.s. roughness is not more than about 5nm; And the interlaminar bonding power between the rest part of described trilamellar membrane and described composite membrane is big must to be enough to bear 180 peel adhesion tests (peel adhesion test).Preferably, this composite membrane comprises further that between above-mentioned three-layered metal film and flexible plastic substrates one is strengthened hard coat, is preferably acrylic acid coatings.The skin of this three-layered metal film is aforesaid tin indium oxide or Indium sesquioxide cerium; And internal layer is aforesaid silver, palladium and copper alloy.
A preferred implementation of described composite membrane comprises following character: optical transmittance is at least 90% in whole visibility region; Resistivity be not more than about 5 Ω/square; And r.m.s. roughness is not more than about 2.5nm.
Typically, the flexible plastic substrates of described composite membrane is aforesaid polyethylene terephthalate (PET), naphthalic acid polyvinyl ester (PEN), polyethersulfone (PES), polycarbonate (PC), polysulfones, resol, Resins, epoxy, polyester, polyimide, polyether ester, polyetheramides, rhodia, aliphatic polyurethane, polyacrylonitrile, tetrafluoroethylene, poly(vinylidene fluoride), poly-(Methyl Methacrylate) or aliphatics or cyclic polyolefin.A kind of preferred flexible plastic substrates is cyclic polyolefin or polyester.
Another aspect of the present invention is a kind of multi-layered electrode/underlying structure, and it comprises an etching composite membrane that makes according to the present invention.This multi-layered electrode/underlying structure can be LCD, OLED or PLED.
Electro-conductive material can be a kind of luminescence polymer.This polymkeric substance can be poly-(right-phenylacetylene) (PPV), poly-(dialkoxy phenylacetylene), poly-(thiophene), poly-fluorenes, poly-(phenylene), poly-(phenylacetylene), poly-(aniline), poly-(3-alkylthrophene), poly-(3-octyl group thiophene), or poly-(N-vinylcarbazole).
Perhaps, this multi-layered electrode/underlying structure can comprise an electro-conductive material, and this electro-conductive material is luminescent organic or organo metallic material.This luminescent organic or organo metallic material can be selected from the group that following material constitutes: oxine thing metal cation salt, trivalent metal quinoline thing complex compound, the quinoline thing complex compound of trivalent metal bridge joint, the bivalent metallic ion complex of Schiff base, tin (IV) metal complex, the metal acetylacetonates complex compound, in conjunction with being selected from 2-picolyl ketone, the metal bidentate ligand complex compound of the organic ligand of quinaldine based ketone of 2-(quinaldyllcetones) and 2-(neighbour-phenoxy group) pyridone, diphosphonate (bisphosphonates), divalent metal dicyano two sulphur synthetic fibre (maleonitriledithiolate) complex compounds, the molecule charge transfer complex, rare earth blended inner complex, (5-hydroxyl) quinoxaline metal complex compound, and three quinoline aluminums.
The accompanying drawing summary
With reference to following description, claims and described accompanying drawing, the above-mentioned feature, aspect and the advantage that reach other of the present invention will be better understood, in the accompanying drawing:
Fig. 1 shows the configuration of surface of two ITO/AgPdCu/ITO films of the example 1 by atomic force microscope mensuration and the measuring result of roughness, sample 173-11 (Fig. 1 (a) and Fig. 1 (b)) with two dimension (Fig. 1 (a), Fig. 1 (c)) and three-dimensional (Fig. 1 (b), Fig. 1 (d)) mode respectively; Sample 173-12 (Fig. 1 (c) and Fig. 1 (d)), scan size 20 * 20 μ m.
Fig. 2 is a graphic representation, shows the optical transmittance of ITO/AgPdCu/ITO film in the example 1 that is deposited on the HC/Arton.
Fig. 3 is a graphic representation, shows in the AgPdCu layer thickness of ITO/AgPdCu/ITO film of the example 1 of deposition attitude and the relation of optical transmittance and surface resistivity.
Fig. 4 is a graphic representation, shows the O of the ITO/AgPdCu/ITO film of the example 1 after wearing out
2The relation of/Ar ratio and surface resistivity and optical transmittance.
Fig. 5 is a graphic representation, shows with different O
2The optical transmittance of the aging back ITO/AgPdCu/ITO film of/Ar ratio preparation.
Fig. 6 a, Fig. 6 b show the configuration of surface of ITO/APC/ITO film.
Fig. 6 a is depicted as the sample 173-2 after annealing and the burin-in process, and Fig. 6 b is depicted as the sample 173-3 after the anneal.
Fig. 7 with two dimension (Fig. 7 a) and three-dimensional (Fig. 7 b) mode show by the configuration of surface of InCeO/AgPdCu/InCeO film and the measuring result (scan size 20 * 20 μ m) of roughness in the example 2 of atomic force microscope mensuration.
Fig. 8 is a graphic representation, shows the optical transmittance of InCeO/AgPdCu/InCeO film in the example 2 that is deposited on the HC/Arton.
Fig. 9 is a graphic representation, shows the optical transmittance of annealing back InCeO/AgPdCu/InCeO film in the example 2 that is deposited on the HC/Arton.
Figure 10 is a graphic representation, shows the optical transmittance of sample InCeO/AgPdCu/InCeO film other in the example 2 that is deposited on the HC/Arton.
Figure 11 is a graphic representation, shows the optical transmittance of sample InCeO/AgPdCu/InCeO film after the annealing other in the example 2 that is deposited on the HC/Arton.
Figure 12 is a graphic representation, shows the optical transmittance of the InCeO/AgPdCu/InCeO film of wear out in the example 2 that is deposited on the HC/Arton back (a) and annealing and aging back (b).
Figure 13 is a graphic representation, shows 180 ° of mean force of peeling off test result that adopt adhesive tape 810 to carry out: Figure 13 a is depicted as aging back sample; Figure 13 b is depicted as annealing and aging back sample.
Figure 14 is a Photomicrograph, shows the configuration of surface that test InCeO/AgPdCu/InCeO film is afterwards peeled off in the intersection line.
Embodiment
The invention provides a kind ofly for example in order to develop flexible show electrode, and the roller of the transparent metal film of height of deposition conduction deposits (roll-to-roll deposition) method to roller on flexible plastic substrates, and the film that makes by such method.These films are specially adapted to employed transparency conducting layer (TCL) in flat-panel monitor, solar panel, radiation backing structure and other application.The present invention also provides a kind of composite membrane, and the equilibrium property that this composite membrane had comprises: the optical transmittance in whole visibility region is at least 80%; Resistivity be not more than about 20 Ω/square, more preferably then for be not more than about 10 Ω/square; R.m.s. roughness is not more than about 5nm; And the interlaminar bonding power between the rest part is big in metallic membrane and this composite membrane must be enough to bear the test of 180 ° of peel adhesion.Employed term " composite membrane " refers to flexible flake in the specification sheets of present patent application and claims, this flexible flake is the complex body that is made of conductive metal film and flexible plastic substrates, wherein this metal film deposition or be formed on this flexible plastic substrates.Preferred highly conductive transparent metal material comprises a trilamellar membrane, and wherein two skins are the alloys that are selected from Indium sesquioxide cerium (InCeO) and tin indium oxide (ITO), and internal layer is the alloy of silver, palladium and copper (Ag/Pd/Cu).A kind of particularly preferred silver, palladium and copper alloy comprise about 98% silver, about 0.5% palladium and about 1.5% copper.Preferably, this composite membrane further comprises the hard coat of a reinforcement between thin conductive metal film and flexible plastic substrates.
I. be used for roller to the sedimentary method of roller
A. membrane deposition method
(1) in general, the method that is used to form composite membrane of the present invention comprises: flexible plastic substrates is provided;
(2) by film deposition techniques, above-mentioned multilayer conductive metallic membrane is deposited on this flexible plastic substrates continuously, thereby forms composite membrane; And
(3) this composite membrane is collected in the successive roller.
The skin of multilayer conductive metallic membrane is Indium sesquioxide cerium (InCeO) or tin indium oxide (ITO).The internal layer of multilayer conductive metallic membrane is the alloy of silver, palladium and copper (Ag/Pd/Cu), as mentioned above.Typically, the alloy of silver, palladium and copper comprises about silver of 97% to 99%, about 0.3% to about 0.8% palladium and about 1.2% to about 1.8% copper.Preferably, the alloy of silver, palladium and copper comprises about 98.5% silver, about 0.5% palladium and about 1.5% copper.
This film deposition techniques can be sputter, ion beam depositing, chemical vapour deposition, ion beam enhanced depositing or laser ablation deposition.Preferably, this film deposition techniques is a dc magnetron sputtering.
For dc magnetron sputtering, sputter is to carry out to about 2000 watts maximum sputtering power with about 300 watts.For the sputter of ITO layer, sputtering power is preferably about 600 watts to about 800 watts; Preferred then is that this sputtering power is about 600 watts.For the sputter of ICO layer, preferably, this sputtering power is about 600 to 800 watts.For the sputter of Ag alloy layer, this sputtering power is generally about 60 watts to about 100 watts.When exterior layer was ITO, the sputtering power that is used for sputter Ag alloy layer was preferably about 70 watts to about 100 watts, more preferably then was about 80 watts to about 100 watts.When exterior layer was ICO, the sputtering power that is used for sputter Ag alloy layer was preferably about 70 watts to about 90 watts.
Typically, the deposition of dc magnetron sputtering distance is about 2 inches to about 12 inches.The deposition distance of dc magnetron sputtering is preferably about 9 inches to about 11 inches.More preferably, the deposition of dc magnetron sputtering distance is about 10 inches.Can adjust this deposition distance, be best and make it to become used depositing system.
Typically, dc magnetron sputtering carries out in a kind of atmosphere, and this kind atmosphere comprises argon and selectable oxygen, and has the pressure of 2-4mT or be the pressure of the best for used deposit cavity.Preferably, this atmosphere comprises the oxygen that is used for ICO or the sputter of ITO layer, and comprises the argon that only is used for the sputter of Ag alloy layer.For the sputter of ITO layer, more preferably, the flow velocity of oxygen is to about 3.75 standard cubes li milliliter (standard cubiccentimillitor) from about 0.2.For the sputter of ICO layer, more preferably, the flow velocity of oxygen is to about 2.0 standard cubes li milliliter from about 0.2.Preferably, the flow velocity of argon is to about 20.0 standard cubes li milliliter from about 5.0.Further preferred then is that the flow velocity of argon is about 10 standard cubes li milliliter.Also can adjust air-flow, be best and make its scale for used chamber size and deposition process.
Typically, the linear velocity between depositional stage is up to 4 feet per minute clocks.For the deposition of ITO layer, this linear velocity is preferably from about 0.3 feet per minute clock to about 1.2 feet per minute clocks, more preferably is from about 0.7 feet per minute clock to about 1.0 feet per minute clocks.For the deposition of ICO layer, this linear velocity is preferably from about 0.3 feet per minute clock to about 1.2 feet per minute clocks, more preferably is from about 0.7 feet per minute clock to about 0.8 feet per minute clock.For the sputter of Ag alloy layer, this linear velocity is preferably 0.7 to 0.8 feet per minute clock.In deposition, regulate the thickness that this linear velocity is controlled ICO or ITO and Ag/Pd/Cu layer.Also can adjust this linear velocity, be optimum and make its yardstick for used target size and depositing operation.
In a preferred implementation, deposition occurs on one the 12 inches wide nets (web) of flexible plastic substrates, have 4 to come the refrigerative magnetron sputter source by cooling water source, and the diameter of target is 6 inches.Other suitable device is known.
B. the structure of composite membrane
Described thin conductive metal film has InCeO or ITO skin, and Ag/Pd/Cu alloy internal layer, as mentioned above.Be typically, the thickness of InCeO or ITO layer is extremely about 60nm of about 10nm, and the thickness of Ag/Pd/Cu layer is that about 5nm is to about 20nm.Preferably, the thickness of InCeO or ITO layer is extremely about 45nm of about 30nm, and the thickness of Ag/Pd/Cu alloy layer is that about 12nm is to about 16nm.
Typically, when skin was InCeO, the moiety of this InCeO layer and InCeO target were approximate, and have a kind of amorphous structure (amorphous structure).After the annealing, this InCeO film still has amorphous structure.
This flexible plastic substrates can be the self-support type plastic film of any flexibility, and it supports thin conductive metal film." plastics " are meant superpolymer, make by polymeric synthetic resins usually, its can with other composition, for example solidifying agent, filler, toughener, tinting material and softening agent merge mutually.Plastics comprise thermoplastic material and thermosetting material.
In order to become self-support type, flexible plastic film must have enough thickness and mechanical integrity, but should be not thick in becoming the inflexible degree.Typically, flexible plastic substrates is a layer (for example thickness is 200 μ m) the thickest in the composite membrane.Therefore, this substrate has determined the machinery and the thermostability of abundant posttectonic composite membrane to a great extent.Therefore, a kind of preferred exemplary flexible substrates is to be made by such material: this material can be stablized 6 hours at 130 ℃, anti-1 " axle tracking (mandrel tracking), and pencil hardness (pencil hardness)＞2H.
Another important attribute of this flexible plastic substrates material is its Tg value.Tg is defined as glass transition temperature, and plastic material will be from the glassy transition to the rubbery state under this temperature.It can be included in material can an actual flow scope before.The suitable material that is used for flexible plastic substrates comprises the have low relatively glass transition temperature thermoplastics of (being up to 150 ℃) and the material with high relatively glass transition temperature (more than 150 ℃).The selection factor that is used for the material of this flexible plastic substrates for example depends on fabrication process condition (for example depositing temperature and annealing temperature), and back working condition (for example in the production line of display manufacturer).Some plastic-substrates that to discuss below can stand the high processing temperature, can reach at least 200 ℃ (some can reach 300 to 350 ℃) and does not damage.
Typically, this flexible plastic substrates is polyethylene terephthalate (PET), naphthalic acid polyvinyl ester (PEN), polyethersulfone (PES), polycarbonate (PC), polysulfones, resol, Resins, epoxy, polyester, polyimide, polyether ester, polyetheramides, rhodia, aliphatic polyurethane, polyacrylonitrile, tetrafluoroethylene, poly(vinylidene fluoride), poly-(Methyl Methacrylate) or aliphatics or cyclic polyolefin.Aliphatic poly alkene is including but not necessarily limited to high density polyethylene(HDPE) (HDPE), new LDPE (film grade) (LDPE) and comprise the polypropylene that is orientated polypropylene (OPP).Cyclic polyolefin is including but not necessarily limited to poly-(two) cyclopentadiene)).A kind of preferred flexible plastic substrates is cyclic polyolefin or polyester.
Various cyclic polyolefins are fit to this flexible plastic substrates.Embodiment comprises Japan SyntheticRubber Co., Tokyo, the Arton that Japan makes; Zeon Chemicals L.P., the Zeanor that TokyoJapan makes
TMAnd Celanese A.G., the Topas that Kronberg Germany makes
TMArton is poly-(two (cyclopentadiene)) polycondensate, and it is a polymeric film, and has following general formula:
Wherein X is a polar group.
Perhaps, this flexible plastic substrates can be a kind of polyester.A kind of preferred polyester is an aromatic polyester, for example Arylite.
Can utilize a hard coat to strengthen this flexible plastic substrates.The thickness of this hard coat is generally about 1 μ m to about 15 μ m, is preferably about 2 μ m to about 4 μ m, and can obtain by the radical polymerization (causing by heat or ultraviolet radiation) of suitable polymerizable material.Can use different hard coats according to substrate.If substrate is polyester or Arton, a kind of particularly preferred hard coat is the coating that is called as " Lintec ".Lintec comprises the acrylic polyester and the silica gel of ultraviolet curing; In the time of on being deposited on Arton, the surface composition of Lintec is: C, 35% atom; O, 45% atom; And Si, 20% atom does not contain H.Another kind of particularly preferred hard coat is by Tekra Corporation, New Berlin, the acrylic acid coatings that Wisconsin is sold down at trade mark " Terrapin ".
The applicant has been noted that hard coat provides remarkable improvement in nature in some of composite membrane, has for example improved the interlaminar bonding power between transparent conductive metal film and the hard coat, has reduced the roughness of composite membrane.The material impact of hard coat can comprise and improved Chemical bond between configuration of surface (hard coat plays the effect of complanation layer, has reduced roughness) and conductive metal layer and vinylformic acid hard coat.Thereby form electrode if this composite membrane is carried out laser-induced thermal etching, this hard coat can help etching process so, as what discussed in the U.S. Patent Application Serial Number 10/008,808 that submit to, that transferred the possession of equally November 13 calendar year 2001.
C. cleaning before depositing
A kind of the method according to this invention can further comprise the preceding cleaning of a deposition.This step is included in before the film deposition, utilizes plasma body to clean this step of surface of this flexible plastic substrates.Plasma body can be Ar+O
2, Ar or Ar+N.Also can use the plasma body of other gas.According to the present invention, utilize the preceding plasma step of deposition can improve the interlaminar bonding power of composite membrane.
D. deposit the after annealing step
A kind of the method according to this invention can further comprise a deposition after annealing step.Typically, this deposition after annealing step is included under the temperature between about 130 ℃ and about 250 ℃, and this film is carried out about 0.5 hour to about 2 hours annealing.The deposition after annealing carries out under envrionment conditions.According to the present invention, utilize deposition after annealing step can improve the interlaminar bonding power of composite membrane.
Different with the anneal that is used for No. the 5th, 667,853, the United States Patent (USP) glass-based structure, that authorize Fukuyoshi is that the temperature of anneal of the present invention is subjected to the restriction of composite membrane character.Have been found that this anneal significantly improved interlaminar bonding power under many circumstances.When determining suitable annealing conditions, also must consider some appearance character (appearanceproperties) of composite membrane, eye-catching color and brightness.These influences will go through in each embodiment.
E. the desirable properties of composite membrane
Typically, the optical transmittance that this composite membrane had is at least 80% at visible wavelength reference point place.Preferably, this optical transmittance is at least about 90%.
Typically, the resistivity of this composite membrane be not more than about 20 Ω/square.Preferably, the resistivity of this composite membrane be not more than about 10 Ω/square.Preferredly then be, the resistivity of this composite membrane be not more than about 5 Ω/square.
Typically, the r.m.s. roughness that this composite membrane had is not more than about 5nm.Preferably, the r.m.s. roughness of this composite membrane is not more than about 2.5nm.More preferably then be that the r.m.s. roughness of this composite membrane is not more than about 1.3nm.
Typically, this composite membrane is stable, can be exposed in 60 ℃, the environment of relative humidity 90% to reach 500 hours.
Preferably, the interlaminar bonding power of this composite membrane is sufficiently big, can stand 180 ° of peel adhesion tests.The further details of this test will provide among the embodiment later.A key property when interlaminar bonding power is to use composite membrane when wherein this composite membrane is aging or during handling, isolating tendency may occur between the conductive metal film of this structure and other film.As mentioned above, utilize the preceding plasma cleaning of deposition, deposition after annealing or in this composite membrane, use hard coat, can improve interlaminar bonding power according to composite membrane of the present invention.
Preferably, this composite membrane can carry out wet method and dry etching; Perhaps, but comprise that the composite membrane of hard coat is laser-induced thermal etching.Etching is used to make the TCL patterning usually, for use in flat-panel monitor and other purposes.With the Ag/Pd/Cu alloy as a remarkable advantage of multiple layer metal film inner layer be improved etching after anti-oxidant or erosion-resisting ability.
Preferably, the brightness L of this composite membrane is at least about 80.0%, and red green skew a is about 0 to approximately-7.00, and blue yellow skew b is about 0 to about 7.00.To provide in an embodiment about the further details of measuring brightness, red green skew and blue yellow skew.
II. the composite membrane that makes by method of the present invention
Another aspect of the present invention is the composite membrane that makes with aforesaid method.Preferably, film deposition techniques is a dc magnetron sputtering recited above.
Preferably, dc magnetron sputtering is to carry out in a kind of atmosphere that comprises argon and oxygen.
Preferably, this flexible plastic substrates is a cyclic polyolefin.
This composite membrane preferably has desirable properties recited above, comprises high optical transmittance, low resistance, low r.m.s. roughness, cohesive force between high-temperature stability under the high relative humidity and high level.Preferably, this composite membrane can carry out wet method and dry etching; Perhaps, if used hard coat, but the preferably laser-induced thermal etching of this film.
Another aspect of the present invention is a kind of composite membrane, and it comprises the three-layered metal film (as mentioned above) that applies or be deposited on the flexible plastic substrates, wherein this composite membrane: (1) has at least 80% optical transmittance in visibility region; (2) resistivity that is had be not more than about 20 Ω/square, preferably be not more than about 10 Ω/square, more preferably then be not more than about 5 Ω/square; (3) r.m.s. roughness that is had is not more than about 5nm, preferably is not more than about 2.5nm, more preferably then is to be not more than about 1.3nm; And (4) must be enough to stand 180 ° of peel adhesion tests in that the three-layered metal film of this composite membrane and the interlaminar bonding power between other parts are big.Preferably, of the present invention this on the one hand, the optical transmittance by visibility region is at least 90%, resistivity be not more than about 5 Ω/square, and r.m.s. roughness is not more than about 2.5nm.More preferably, the r.m.s. roughness of this composite membrane is not more than about 1.3nm.In this one side of the present invention, this composite membrane can further comprise a reinforcement hard coat between three-layered metal film and flexible plastic substrates.Typically, this reinforcement hard coat is an acrylic acid coatings.Typically, this flexible plastic substrates as mentioned above.
III. multi-layered electrode/underlying structure
Another aspect of the present invention is a kind of multi-layered electrode/underlying structure, and it comprises the composite membrane that promptly makes according to aforesaid method according to composite membrane of the present invention, and this composite membrane is by wet etching or dry etching and form electrode.In November 13 calendar year 2001 U.S. Patent Application Serial Number 10/008,808 that submit to, that transferred the possession of equally a kind of preferred dry etching method is disclosed.
This multi-layered electrode/underlying structure can be OLED or PLED.Preferably, the surfaceness of this multi-layered electrode/underlying structure is less than about 8nm.More preferably, the surfaceness of this multi-layered electrode/underlying structure is less than about 5nm.Preferred then is that the surfaceness of this multi-layered electrode/underlying structure is less than 2.5nm.
Preferably, the driving voltage of this multi-layered electrode/underlying structure is less than about 20 volts.
This multi-layered electrode/underlying structure can comprise electro-conductive material, and this electro-conductive material is a luminescence polymer.
Typically, this luminescence polymer is selected from next group material: p-phenylene vinylene (PPV), poly-(dialkoxy phenylacetylene), poly-(thiophene), poly-fluorenes, poly-(phenylene), poly-(phenylacetylene), poly-(aniline), poly-(3-alkylthrophene), poly-(3-octyl group thiophene) and poly-(N-vinylcarbazole).Preferably, this luminescence polymer for poly-(right-phenylacetylene) (PPV) or poly-fluorenes.In another kind of alternative, multi-layered electrode/underlying structure comprises electro-conductive material, and this electro-conductive material is luminous organic (luminescentorganic) or organometallic metallic substance.
This luminous organic or organometallic metallic substance is selected from the group of following goods and materials formation usually: oxine thing metal cation salt, trivalent metal quinoline thing complex compound, the quinoline thing complex compound of trivalent metal bridge joint, the bivalent metallic ion complex of Schiff base, tin (IV) metal complex, the metal acetylacetonates complex compound, in conjunction with being selected from 2-picolyl ketone, the metal bidentate ligand complex compound of the organic ligand of quinaldine based ketone of 2-(quinaldyllcetones) and 2-(neighbour-phenoxy group) pyridone, diphosphonate (bisphosphonates), divalent metal dicyano two sulphur synthetic fibre (maleonitriledithiolate) complex compounds, the molecule charge transfer complex, rare earth blended inner complex, (5-hydroxyl) quinoxaline metal complex compound, and three quinoline aluminums.
This multi-layered electrode/underlying structure can be incorporated into device, as in touch pad or the flexible circuit, and other has in the device of transparency conducting layer (TCL).
The present invention illustrates by the following example.These embodiment only are used for purpose of explanation, and do not mean that restriction the present invention.
Example 1
Roller is to the deposition of roller mode and the sign of ITO/APC/ITO rete
I. deposit and characterize
Base material is by the coated Lintec Arton of hard coat (HC/Arton).Table 1 has been listed the character of Lintec Arton.In the surface component of the hard coat on the Lintec Arton, have: the C of 35% atom, the O of 45% atom, and the Si of 20% atom, not hydrogeneous, and contain the acrylate and the silica gel of ultraviolet curing.
The character of table 1:HC/Arton plate
| Material | Rank | Thickness (μ m) | Surface RMS (nm) | Tg (C) | Block (g/m 2/ day) (℃/RH) | Surface energy (mN/M) | T％ (@550nm) |
| HC/Arton (Lintec) | CHC-PN188W PFW | 188 | 1.3 | 171 | 31.4 (40/100) | 36.3 | 91.4 |
In DC magnetron sputter pattern and roller substrate feed mode, adopt Ai Li sputtering system (Avery Sputtering System) to carry out sedimentation experiment to roller.
The pressure of foundation of deposit cavity is 1.54 * 10
-3MT, and work or deposition pressure are 2.4-3.1mT.Before carrying out film deposition, use Ar+O
2Plasma body cleans plastic roller, thereby the surface chemistry of plastics is carried out modification.The sputtering power that is used for plasma cleans is 1200W, and O
2The gas flow rate of/Ar is than being 5/50sccm.
Be deposition ITO rete, the power of employing 600 to 800W comes In
2O
3-10%SnO
2Target carries out sputter.In this deposition process, O
2The gas flow rate ratio of/Ar is controlled in the scope of (0-3.75)/10sccm, and the linear velocity of plastic roller is controlled in about 0.3 to 1.2 feet per minute clock.Cu target by with 70 to 100W power sputter Ag-0.5%Pd-1.5% comes deposit alloy Ag layer.Sputter gas is that flow velocity is 10sccm, and linear velocity is the Ar of about 0.7 to 0.8 feet per minute clock.Linear velocity is subjected to regulating the thickness with the control depositional coating.For ITO and AgPdCu layer, the distance between plastics and the target is 10 inches.
For reaching the optimum performance of film, and make the sign of ITO/APC/ITO film relevant with deposition process.Utilize ellipsometer to measure the thickness and the specific refractory power of ITO/APC/ITO film.Chemical composition is characterized by XPS spectrum.Utilize the Nanoscope III type atomic force microscope (AFM) and the opticmicroscope of Digital Instruments company to come O﹠A configuration of surface and roughness.Surface resistivity utilizes 4 probe conductivity tstrs (Loresta) to measure.Employing ultraviolet ray/visible spectrometry (UV/VIS) and colourimeter (Hunter) are measured transmission of visible light and are characterized the color and the brightness of deposited film.
By the intersection that adopts 3M adhesive tape 810 scrape with 180 ° peel off the interlaminar bonding power that testing method is estimated these films.Measuring length is 1 inch, and the speed of pinblock is 12 inch per minute clocks.Before this test, this adhesive tape is remained on sample surfaces, the residence time reaches 20 hours.At this test period, stack pressure is 4, and uses 1/2 pound roller.
The ITO/APC/ITO film that is deposited on the different plastics is annealed and the aged aftertreatment, with the influence of investigation to character, interface viscous force and structural stability.In being 150 ℃ air, temperature carries out 120 minutes anneal.Under 60 ℃, the condition of relative humidity (RH) 90%, carry out 500 hours burin-in process.
II. thickness, moiety and form
In deposition test, the ITO layer in a sample is forming under the power of 1000W, and employed sputtering power is respectively about 600,80 to 100 and 600W in the deposition of ITO, APC and ITO layer.In the deposition of ITO film, linear velocity is 0.7 to 1.0 feet per minute clock, is 0.7 to 0.8 feet per minute clock in the deposition of APC layer.Regulate the thickness that sputtering power and linear velocity are controlled ITO and APC layer.Table 2 shows the thickness of sputtering power, O2/Ar gas flow rate ratio and all deposition attitude ICO/APC/ICO films.In the deposition of APC layer, be 10sccm for sample 173-1 to 173-7Ar flow velocity, be 9sccm for other sample Ar flow velocity.
The thickness of table 2. mode of deposition and film
The chemical composition of ITO/APC/ITO film utilizes the XPS technology to characterize.At first pass through Ar
+Bundle carries out 2 minutes sputter etching to top ITO layer, collects the moiety that XPS spectrum is calculated film then.In order to improve the optical transmittance of ITO/APC/ITO film, between ITO layer depositional stage, the flow velocity of oxygen is brought up to 3sccm from 0.4sccm.The material that is obtained in the ITO layer after top ITO layer and the annealing is respectively shown in table 3 and table 4.No matter can find out, be O
2Flow velocity is increased to 3.0sccm or this film is carried out two hours annealing under 150 ℃, and considerable change does not appear in the concentration of O, Sn and In.
The surface composition composition of table 3. top ITO film
The surface composition composition of the top ITO film after table 4. annealing
Utilizing scale is configuration of surface and the roughness that the AFM instrument of 20 * 20 μ m is observed the ITO/APC/ITO film.Fig. 1 shows the configuration of surface of synthetic ITO/APC/ITO film in different deposition atmosphere.As can be seen, the surface of these films is very level and smooth.
Rootmean-square (RMS) roughness of utilizing the AFM technical measurement has been shown in the table 5.Can find out that all ITO/APC/ITO samples are very smooth, RMS is about 1.2nm.Between ITO layer depositional stage, O
2As if the variation of pressure or flow velocity to the configuration of surface and the roughness not obviously influence of ITO/APC/ITO film, shown in the data among Fig. 1 and the table 5.
Table 5. sample number into spectrum, scan size, RMS and R
MaxValue.
| The sample sign | O 2Flow velocity (sccm) | Scan size (μ m) | R q (nm) | R max (nm) |
| 173-7 | 1.0 | 20×20 | 1.22 | 20.1 |
| 173-11 | 1.2 | 20×20 | 1.19 | 13.4 |
| 173-13 | 2 | 20×20 | 1.22 | 11.6 |
| 173-12 | 3 | 20×20 | 1.17 | 11.0 |
The character of III.ITO/APC/ITO film
In the design of transparent superconduction (TSC) film of oxide/metal/oxide compound, metal (for example Ag or its alloy) layer is used for degree of raising electric conductivity, and as protective layer, top and bottom oxide film are selected to has high refractive index to improve the optical transmittance of TSC film.For reach be lower than 5 Ω/square surface resistivity, the highly conductive rate metal level in the TSC film (Ag or its alloy) should have enough thickness.On the other hand, improve thickness of oxide layer and can strengthen optical transmittance, but also can influence the surface resistivity of TSC film.Usually, ITO, SnO
2, ICO, amorphous InTiO etc. are the good candidate materials as transparent oxide film.When ITO is used as oxide film in the TSC electrode, for the colourless ITO film of deposition and improve the optical transmittance of formed ITO/APC/ITO film therefrom, in deposition, improve O
2Pressure or flow velocity are a kind of good modes.
In this scheme, the ITO/APC/ITO film may be at different reaction O
2/ Ar gas ratio down with prepare with different layer thicknesses, in order that realize the best of breed of optics electrical properties.2 hours after annealings that all deposited samples are carried out under 150 ℃ are handled, then to the deposition attitude and the annealed sample carry out 60 ℃, 90%RH, 500 hours burin-in process.Table 6 show the deposition attitude and annealed ITO/APC/ITO sample surface resistivity, in the optical transmittance and the color at 550nm wavelength place.These data are the mean value that obtains by measuring each sample in the scope of 4 inches of φ.
Table 6. deposits attitude on HC/Arton and the character of annealed ITO/APC/ITO film
Data in the table 6 show, the ITO/APC/ITO film of deposition attitude can reach be lower than 5 Ω/square surface resistivity, shown in the listed data of sample 173-9 to 173-14.Yet the ITO/APC/ITO film of deposition attitude has relatively low optical transmittance (T＜85%) and brightness (L＜75%).And the ITO/APC/ITO film shows oyster, and this can infer according to color data " a " and " b ".The reason of this poor light transmission and light colour may be because the refractive index ratio ICO film of ITO film lower.
Compare with the measuring result of deposition attitude film, the data in the table 6 show the character of after annealing processing improvement ITO/APC/ITO film.Can find out that at first for nearly all ITO/APC/ITO sample, anneal causes optical transmittance and brightness obviously to improve, and on average is about 4-5%.By anneal, can improve maximum optical transmittance more than 85%, shown in the data in the table 6.Simultaneously, the surface resistivity of ITO/APC/ITO film then is lowered.For sample 173-9 to 173-14, the reduction of surface resistivity is more obvious, reason be the surface resistivity of these samples from the 3.65-4.75 Ω of sedimentation state/square the drop to 2.98-4.26 Ω of annealed film/square.Connect with the data shown in the table 2, just can find out, with high O
2The sedimentary ITO/APC/ITO film of flow velocity shows obvious variation aspect the surface resistivity optical transmittance being provided and reducing.As if yet annealing does not have tangible influence to colour-change, still have identical even higher color data because the ITO/APC/ITO film after the annealing is compared with the sample of deposition attitude, and this can find out from the data of table 6.
Fig. 2 shows the optical transmittance of some ITO/APC/ITO film of having annealed of listing in the table 6.These samples at the optical transmittance at 550nm wavelength place at least more than 80%, this and PolaroidCorporation, the result that USA (International Patent Application WO 99/36261) is reported is consistent.
Table 7 shows surface resistivity, optical transmittance and the color data that obtains from all aging back sample measurements, these aging back samples be the deposition attitude and annealed ITO/APC/ITO film.The sample of deposition attitude in table 6 and the table 7 is compared with the data of annealed sample, and as can be seen, the surface resistivity of aged samples is in close proximity to the surface resistivity that does not have the aged sample.This just means that the aging surface resistivity of ITO/APC/ITO film that can't make produces considerable change.Yet burin-in process can make optical transmittance obviously improve, and particularly for the sample (for example 173-12 and 173-14) of some deposition attitude, optical transmittance has improved 7-10%.In addition, burin-in process can improve brightness slightly and obviously reduce color, increase as " L " in the table 7 value, and " a " and " b " value descends.About the influence of burin-in process, it is always better than the sample of deposition attitude that the data in table 6 and the table 7 show the character of annealing specimen, and this has illustrated the importance that after annealing improves for ITO/APC/ITO film character.Though at this annealing and aging mechanism to ITO/APC/ITO film property effect are not discussed, the atmosphere of the oxidisability in aging and anneal can show the effect of oxygen concn to the formation of the ITO/APC/ITO film of good character.
The character of the deposition attitude after table 7. burin-in process and the ITO/APC/ITO film of having annealed
With layer thickness and O
2/ Ar gas ratio (table 2) connects with character (table 6 and table 7), can find that mode of deposition is depended in the formation with ITO/APC/ITO film of low surface resistivity and high optical transmittance to a great extent.Table 8 shows the thicknesses of layers of top ITO film to the surface resistivity of ITO/APC/ITO film and the influence of optical transmittance of annealing.Selected sample is the O with 0.6 to 1.2
2The preparation of/Ar gas ratio.Except the ITO of sample 173-3 is the power deposit of 1000W, the sputtering power of APC layer is 80 to 100W, and the sputtering power of ITO layer is 600W.As can be seen, when the thickness of APC layer is about 13.6 to 15.8nm, top ITO thickness is increased to 53.2nm from 39.7nm, is not consistent for the surface resistivity of formed ITO/APC/ITO film and the influence of optical transmittance.When the variation of the top ITO thickness in these samples just in time be approximately ± during 7nm, it is compared with other mode of deposition, to not significantly influence of character.
The thickness and the deposition parameter (annealing) of table 8.ITO and APC layer
| The sample tag card | 173-4 | 173-10 | 173-7 | 173-5 | 173-6 | 173-11 |
| Top ITO (nm) | 39.7 | 41.5 | 43.7 | 45.5 | 45.6 | 45.7 |
| The sample tag card | 173-4 | 173-10 | 173-7 | 173-5 | 173-6 | 173-11 |
| APC layer (nm) | 14.3 | 14.6 | 15.8 | 14.4 | 15.0 | 15.3 |
| R (Ω/square) | 6.51 | 4.38 | 5.41 | 7.06 | 6.94 | 3.53 |
| T(％) | 84.85 | 81.56 | 81.42 | 85.87 | 86.26 | 81.15 |
| O to ITO 2/Ar(sccm) | 1.0 | 1.2 | 0.6 | 1.0 | 1.0 | 1.2 |
| Power W to |
80 | 90 | 85 | 80 | 80 | 100 |
Compare with the influence of ITO layer, the variation of APC layer thickness has more series influence to the character of ITO/APC/ITO film.Fig. 3 shows the surface resistivity and the optical transmittance of the ITO/APC/ITO film of deposition attitude, and these films are to form under different APC thickness condition.The ITO layer thickness and the mode of deposition of these samples are shown in Table 9.
The preparation and the sign of table 9.ITO/APC/ITO film
| Sample ID | 173-2 | 173-1 | 173-5 | 173-6 | 173-7 | 173-9 |
| Top ITO (nm) | 45.4 | 46.7 | 45.5 | 45.6 | 43.7 | 45.9 |
| APC(nm) | 12.5 | 13.6 | 14.4 | 15.0 | 15.8 | 19.4 |
| R (Ω/square) | 6.49 | 5.60 | 6.73 | 6.52 | 6.00 | 4.75 |
| T(％) | 78.72 | 79.88 | 82.09 | 81.05 | 76.92 | 74.47 |
| O to ITO 2/Ar(sccm) | 0.6 | 1.0 | 1.0 | 1.0 | 0.6 | 1.0 |
| Power (W) to |
90 | 90 | 80 | 80 | 85 | 90 |
Data presentation among Fig. 3 and the table 9, when the ITO layer is about 45nm when thick, APC thickness is increased to 19.4nm from 12.5nm, thereby cause surface resistivity from 6.73 Ω/square drop to, 4.75 Ω/square, optical transmittance drops to 74.47% from 82.09%.Annealing and also can find identical variation tendency in the aged ITO/APC/ITO sample.Data in analytical table 2, table 6 and the table 7 can be found further, the ITO/APC/ITO film is had be lower than 5 Ω/square surface resistivity, thickness is prerequisite for the PAC layer of about 15nm with the ITO layer that is thinner than 44nm.This can be determined by the take off data of sample 173-9 to 173-14, shown in table 6, table 7 and table 9.
Yet the greatest factor that influences ITO/APC/ITO film character is the O that is used to deposit the ITO layer
2/ Ar gas ratio.Fig. 4 shows O
2/ Ar gas ratio is to the surface resistivity of aging ITO/APC/ITO film and the influence of optical transmittance.Data among Fig. 4 and corresponding sedimentary condition are also listed in the table 10.In order to improve the optical transmittance of ITO/APC/ITO film, in this scheme with O
2/ Ar gas ratio brings up to 3.75/10 (corresponding to actual O
2/ Ar gas ratio is 3/9sccm).
The preparation and the sign of table 10.ITO/APC/ITO film
| Sample ID | 173-8 | 173-2 | 173-5 | 173-6 | 173-7 | 173-10 | 173-11 | 173-13 | 173-12 | 173-14 |
| Top ITO (nm) | 44.3 | 45.4 | 45.5 | 45.6 | 43.7 | 41.5 | 45.7 | 41.7 | 42.0 | 42.6 |
| APC(nm) | 15.7 | 12.5 | 14.4 | 15.0 | 15.8 | 14.6 | 15.3 | 15.0 | 15.5 | 16.2 |
| R (Ω/square) | 5.92 | 6.41 | 6.73 | 6.82 | 6.08 | 4.87 | 3.57 | 3.89 | 3.40 | 3.24 |
| T(％) | 79.70 | 78.46 | 82.84 | 83.43 | 79.73 | 82.98 | 80.27 | 87.49 | 87.15 | 87.89 |
| O to ITO 2/Ar (sccm) | 0.4 | 0.6 | 1.0 | 1.0 | 1.0 | 1.2 | 1.2 | 2.22 | 3.75 | 3.75 |
| Power (W) to |
90 | 90 | 80 | 80 | 85 | 90 | 100 | 100 | 100 | 100 |
Fig. 5 shows the optical transmittance curve of some aging ITO/APC/ITO film.
Compare with other sample, at O
2The sample 173-12 to 173-14 of 2.22 to 3.75 times preparations of/Ar gas ratio shows higher optical transmittance.
IV. interlaminar bonding power and structural stability
Carry out interlaminar bonding power test (IAT) estimate all deposition attitudes, the annealed and the interlaminar bonding power of aged ITO/APC/ITO film.In addition, also all samples is intersected line, under this film has the situation of already present crack, flakes and etching bath, carry out the test of interlaminar bonding power then, to estimate interlaminar bonding power.The peeling off of line of intersecting tested and is particularly suitable for estimating that the surface is not by the interlaminar bonding power of conventional interlaminar bonding power test processes destructive film.After the test of interlaminar bonding power, under opticmicroscope, observe the configuration of surface of ITO/APC/ITO film.
In interlaminar bonding power test, from the deposition attitude, annealed and measured average peel force the aged TO/APC/ITO film.The maximum peel force mean value that found that the ITO/APC/ITO film of all deposition attitudes is about 760g.After annealing, the peel force of all ITO/APC/ITO films all drops to mean value and is about 600g.Yet, if to the deposition attitude and annealed ITO/APC/ITO sample carry out the burin-in process of 60 ℃, 90%RH and 500 hours, average peel force will further descend.The average peel force of the deposition aspect product after aging drops to the about 600g of mean value, and the average peel force of the annealing specimen after wearing out further drops to mean value about 480 to 580g.The decline of peel force and the time of aftertreatment (annealing+aging) are proportional, and this shows that when the ITO/APC/ITO film was exposed to the atmosphere of oxidisability, their surface energy just descended.
On the surface of carrying out observing after the cohesive force test between test of interlaminar bonding power and intersection score layer the ITO/APC/ITO film, reason is that any damage that forms on the film surface shows that all this film is by interlaminar bonding power test crash.Find all the deposition attitudes and the annealed sample passed through IAT reposefully, on the film surface, do not form any damage or defective.For burin-in process, find that burin-in process has reduced the formation of some deposition lip-deep hot spot of aspect product and flakes.Hot spot and flakes may be because interlaminar bonding power or structural stability is relatively poor causes.Another kind of possible reason is to have small water droplet in aging atmosphere, and these water droplets are being dropped between aging time on the film surface.Yet after burin-in process, these defectives are not found on the surface of annealing specimen, and this shows the interlaminar bonding power and the structural stability of after annealing processing raising ITO/APC/ITO film.
According to ASTM 3359B standard, if the crack that the test of interlaminar bonding power is caused is lower than 5% of processed surface area with peeling off, then sample is by the test of interlaminar bonding power.Fig. 6 a and Fig. 6 b show the typical surface form of handling the ITO/APC/ITO film of intersection line afterwards through the interlaminar bonding force test method.For intersecting the film of line, the deposition attitude after all deposition aspect product in interlaminar bonding power test result surface, most annealing specimen and all burin-in process and annealing specimen passed through interlaminar bonding power test processes.After interlaminar bonding power test processes, the sample of being tested does not exist any observable crackle and flakes along tangent line or grooving edge, the typical figure shown in Fig. 6 a.Only observe that annealing specimen 173-3,173-8,173-10 and 173-13 comprise some cracklins and flakes, it accounts for the 5-10% of IAT area, the typical figure shown in Fig. 6 b.
Most of ITO/APC/ITO films that studies show that of interlaminar bonding power can be by adopting the interlaminar bonding power test of adhesive tape 810.Utilize high O
2The ITO/APC/ITO film of/Ar gas ratio preparation also has good interlaminar bonding power.Seem to anneal help this rete between cohesive force and structural stability.Yet, from interlaminar bonding power test processes, have been found that, compare with InCeO/Ag/InCeO (perhaps ICO/AAC/ICO) and InCeO/AgPdCu/InCeO (perhaps ICO/APC/ICO) film, the ITO/APC/ITO film is harder and more crisp, and this is because can form the crack on the film surface during the interlaminar bonding power test processes of intersection line.
Table 11 shows on 4 area in square inches of aging ITO/APC/ITO film by the observed surface information of bore hole.When the ITO/APC/ITO film is carried out 60 ℃, when 90%RH, 500 hours burin-in process, the surface of most of ITO/APC/ITO films is without any defective.Find that water droplet rotates at sample surfaces between aging time, thereby cause forming from the teeth outwards the oxidation stain.In addition,, should be noted that, comprise some corrosion stains on the film surface of these samples by microscopic examination though on some deposition attitude ITO/APC/ITO film, do not form defective.Mating surface is observed and the test of interlaminar bonding power, provable annealed and aged samples has structural stability preferably.
The surface condition of the aging ITO/APC/ITO film of table 11.
| The sample sign | The deposition attitude | Annealed |
| 173-1 | A stain | The stain that the globule causes |
| 173-2 | The fine stain of minority on the cut edge | The fine stain of minority on the cut edge |
| 173-3 | Zero defect | The stain that the globule causes, indentation |
| 173-4 | Zero defect | Zero defect |
| 173-5 | Zero defect | Zero defect |
| 173-6 | Zero defect | A few small stain |
| 173-7 | Zero defect | Zero defect |
| The sample sign | The deposition attitude | Annealed |
| 173-8 | Zero defect | Zero defect |
| 173-9 | Small pit, stratified film | Small pit, stratified film |
| 173-10 | Zero defect | Zero defect |
| 173-11 | Zero defect | Zero defect |
| 173-12 | The big stain that the globule causes | The fine stain of minority |
| 173-13 | Zero defect | Zero defect |
| 173-14 | Zero defect | Zero defect |
V. conclusion
The ITO/APC/ITO film can be deposited on the HC/Arton in the mode of roller to roller, its surface resistivity less than 5 Ω/square, optical transmittance is greater than 80% and have a smooth-flat-surface.In order to improve the optical transmittance of ITO/APC/ITO film, the O in the ITO layer deposition
2/ Ar velocity ratio should remain on more than the 1.2sccm.High O with 2.22 to 3.75
2The ITO/APC/ITO film that/Ar gas ratio is prepared is the APC layer of about 15nm and the thickness ITO layer less than 44nm if this film has thickness, so the surface resistivity of this film will drop to 3-4 Ω/square, and optical transmittance will reach more than 85%.
After annealing is handled can be by reducing surface resistivity, improving the character that optical transmittance improves the ITO/APC/ITO film.The IAT test shows: even this ITO/APC/ITO film carries out 60 ℃, 90%RH, 500 hours burin-in process, the ITO/APC/ITO film of after annealing still has interlaminar bonding power and structural stability preferably.
Find high O
2/ Ar gas ratio helps to make sedimentary ITO/APC/ITO film to have low surface resistivity and improves optical property, for example improves optical transmittance and reduces color.In addition, utilize high O
2The ITO/APC/ITO film of/Ar gas ratio preparation also has good interlaminar bonding power and structural stability.The ITO/APC/ITO film can reach the conductivity level identical with the ICO/APC/ICO film with ICO/AAC/ICO.
Example 2
Roller is to the deposition of roller mode and the sign of ICO/APC/ICO film
I. deposit and characterize
Base material is the Arton with the Lintec company of hard coat (HC/Arton) coating.The surface composition composition of this hard coat is that C is 35% atom, and O is that 45% atom and Si are 20% atom, and not hydrogeneous, hard coat comprises the acrylic polyester and the silica gel of ultraviolet curing.The character of HC/Arton is listed in the table 1 of example 1 above.
Deposition test is to utilize Ai Fuli sputtering system and roller with dc magnetron sputtering pattern to carry out to roller substrate feed mode.
The basic pressure of deposit cavity is 1.5-4 * 10
-3MT, and work or deposition pressure are 2.4-3.1mT.Before the film deposition, use Ar+O
2Plasma body cleans plastic roller, to improve the surface chemistry of plastic material.Employed sputtering power is 1200W in this plasma body cleaning, and O
2The gas velocity of/Ar is than being 5/50sccm.For the deposition of InCeO film, utilize 600 to 800W power to come sputter In
2O
3-10%CeO
2Target.In this deposition, with O
2The gas velocity ratio of/Ar is controlled in the scope of (0-2)/10sccm, and the linear velocity of plastic roller is about 0.3-1.2 feet per minute clock.Cu target by with 70 to 90W power sputter Ag-0.5% atom Pd-1.5% atom comes deposit alloy Ag layer.Sputter gas is that flow velocity is 10sccm and linear velocity is the Ar of about 0.7 to 0.8 feet per minute clock.Regulate the thickness that linear velocity is controlled deposited film.For the deposition of InCeO and AgPdCu layer, the distance between plastics and the target is 10 inches.
Be used for measuring and used identical of the method for the thickness of estimating the ICO/APC/ICO film, configuration of surface and roughness, electricity and optical property and interface viscous force and instrument and sign ITO/APC/ITO film, as described in the example 1.The after annealing of ITO/APC/ITO film and aged treatment condition also with example 1 in employed identical.
II. moiety and form
Utilize the XPS technology to characterize the chemical composition of ICO/APC/ICO film.At first use Ar+ beam sputtering etching top ICO layer 1.5 minutes, collect the moiety that XPS spectrum is calculated film then.The moiety that obtains from top ICO layer has been shown in the table 12.Can find out, although when deposition with O
2Flow velocity has been brought up to 2.0sccm from 0.6sccm, but the not considerable change of the concentration of O, Sn and In.Yet, it seems with O
2Flow velocity increases, and Ce concentration can descend slightly.
The surface composition composition of the InCeO film of table 12. sputter
Table 13 shows the depth profile that records from sample 168-4.Because Pd in the APC target and the concentration of Cu only are about 0.5 and 1.5% atom, XPS spectrum can not detect the signal of these elements from sedimentary APC layer, so the data not shown of these elements is in table 13.
The depth profile curve of table 13. sample 168-4
* sputtering rate is an approximation
Because surface condition is the electricity and the optical property of the formed film of influence easily, therefore want O﹠A configuration of surface and roughness.On the scale of 20 * 20 μ m, 5 * 5 μ m and 1 * 1 μ m, characterize the configuration of surface and the roughness of ICO/APC/ICO film respectively by AFM.Fig. 8 shows a kind of typical configuration of surface of ICO/APC/ICO film, and it is very level and smooth.
Measured rootmean-square (RMS) roughness is listed in the table 14.Can find out that all samples is all very smooth, RMS is below the 2nm.Reduce O
2Gaseous tension or flow velocity it seems and can make formed film have the surface smoothness of improvement that because sample 168-1 and 168-2 are more level and smooth, its RMS is about 1nm.RMS value measured under different scales is all very approaching, shown in the data in the table 14.
Table 14. sample number into spectrum, scan size, RMS and R
MaxValue
The character of III.ICO/APC/ICO film
O
2Flow velocity or pressure may easily influence the optical transmittance and the electric conductivity of formed oxide film as the deposition factor.Therefore, O
2The variation of flow velocity just have influence on the O concentration of sedimentary InCeO layer, thereby influence ICO/APC/ICO film character.In deposition test, the ICO/APC/ICO film is deposited on the HC/Arton, its this during respectively with 0.6: 10,1.0: 10,1.5: 10 and 2.0: the O of 10sccm
2: the Ar gas ratio synthesizes each ICO layer.The Ar flow velocity of 10sccm and 10 inches deposition distance all keep constant in the deposition process of ICO and APC layer.Other mode of deposition, for example 600,75 and the sputtering power of 600W, and the linear velocity of 0.7,0.8 and 0.7 feet per minute clock, then be used for deposition bottom ICO, APC and top ICO layer respectively.
Table 15 shows the O of deposition attitude ICO/APC/ICO film
2The mutual relationship of flow velocity, thickness, character and interlaminar bonding power.Optical transmittance, color and surface resistivity are the mean value that measures in the area of 2 inches of φ.In addition, the optical transmittance curve of ICO/APC/ICO film is shown among Figure 13 in the measured table 15.
The character of the ICO/APC/ICO film on the table 15.HC/Arton
What determine is, the ICO/APC/ICO film can be produced have high optical transmittance more than 90%, 6 Ω/square about low surface resistivity, shown in the data among table 15 and Fig. 8.In addition, all samples is all by using the interlaminar bonding power test (IAT) of adhesive tape 810.Detailed analysis can be found, with O
2Gas velocity is increased to 2sccm from 0.6sccm can make that the thickness of ICO and APC layer all reduces the ICO/APC/ICO structure, shown in the data in the table 15.Therefore, optical transmittance is improved, but not considerable change of surface resistivity.Compare with InCeO/AgAuCu/InCeO (ICO/AAC/ICO) film, as if the ICO/APC/ICO film has darker color relatively, because brightness is in (referring to the data in the table 15) below 80%.
Table 16 show from carried out 145 ℃ surveyed the annealed ICO/APC/ICO film in following 2 hours character.Fig. 9 show survey the corresponding ICO/APC/ICO of the annealed film on being deposited on HC/Arton optical transmittance.Compare with the film (referring to table 15) of deposition attitude, annealing cause surface resistivity from 5.84-6.57 Ω/square drop to 5.09-5.73 Ω/square, reduced 20%, brightness then is elevated to (76.1-77.7) % from (75.2-76.3) %, has improved 2%.After the annealing, optical transmittance also has increase slightly.In addition, table 17 shows with different O
2Sedimentary all the ICO/APC/ICO samples of flow velocity have all passed through IAT.
The character of the ICO/APC/ICO film of annealing on the table 16.HC/Arton
Shown in the data in table 15 and the table 16, the deposition attitude and annealed ICO/APC/ICO film still have 5 Ω/square more than surface resistivity.Yet, in order to form high-quality transparency electrode, require prepared ICO/APC/ICO film have optical transmittance more than 90% and 5 Ω/square below surface resistivity.Therefore, in the formation of ICO/APC/ICO film,, carried out the deposition test of further reduction surface resistivity by regulating the thickness of ICO and APC layer.Table 17 has shown the thickness and the character of synthetic ICO/APC/ICO film under the different capacity condition.The optical transmittance curve that is got by the film measurement of table 17 is shown among Figure 10.For deposited samples, in deposition process, except sample 168-8 is O with 1sccm
2Outside flow velocity deposits, with Ar and O
2Flow velocity remains on 10sccm and 0.6sccm.
The character of the ICO/APC/ICO film on the table 17.HC/Arton
Data presentation in the table 17, when the thickness of APC layer when 15nm is increased to 20nm, the surface resistivity of ICO/APC/ICO film promptly from 5.25 Ω/square drop to, 4.08 Ω/square.Simultaneously, if the thickness of ICO layer greater than 40nm, then some ICO/APC/ICO films still have the high optical transmittance more than 90%.It seems in the formation of ICO/APC/ICO film, increase at the same time the high optical transmittance that can realize under the situation of ICO and APC layer thickness more than 90% and 5 Ω/square below surface resistivity, shown in the data among table 17 and Figure 10.In addition, as if the variation on the layer thickness does not obviously influence to the interlaminar bonding power of ICO/APC/ICO film, because all samples have all passed through IATs.
Data in the table 18 show the character that records from the ICO/APC/ICO sample that carries out 145 ℃ of following 2 hours anneal.The optical transmittance of ICO/APC/ICO film of having annealed is shown among Figure 11.
The character of the ICO/APC/ICO film of annealing on the table 18.HC/Arton
Compare with data measured from deposition attitude ICO/APC/ICO sample (table 17 and Figure 10), after annealing handle make the surface resistivity of ICO/APC/ICO film further drop to 3.29 Ω/square, and optical transmittance and brightness are increased.Can determine that according to the data in table 17 and the table 18 the ICO/APC/ICO film can adopt the magnetron sputter, its surface resistivity 5 Ω/square below, optical transmittance is more than 90%.
IV. burin-in process
To the deposition attitude and annealed ICO/APC/ICO sample carry out 60 ℃, 90%RH, 500 hours anneal.Can be observed, can not form any defective or stain on the aged film surface,, and passed through anneal although these films are to carry out sedimentaryly with different parameters.As if compare with the ICO/AAC/ICO film, the ICO/APC/ICO film has the enhanced structural stability.This is based on the following fact: between aging time, can form oxidized stain usually on the film surface with the sedimentary ICO/AAC/ICO film of the speed of the oxygen flow more than the 1.6sccm, and the ICO/APC/ICO film that forms does not under the same conditions have any stain after aging.
By the optics electrical properties of aged ICO/APC/ICO sample and the non-sample of aged more, can further characterize aged ICO/APC/ICO sample.Table 19 has been listed the deposition attitude and the character of annealed ICO/APC/ICO film after the burin-in process.It seems that preannealing can't influence the character of aged ICO/APC/ICO film because the aged samples that is shown in Table 19 with anneal and the aged sample is very approaching.Compare with the data in the table 17 with table 15, the surface resistivity of aging film reduces, and optical transmittance and brightness increase.In addition, the character that records from aged ICO/APC/ICO film is very approaching with the character that records from annealed sample, the data shown in table 16, table 18 and table 19.
The aged of table on the 19.HC/Arton, and annealed and the character of aged ICO/APC/ICO film
Figure 12 a and Figure 12 b show aged ICO/APC/ICO film and have annealed and the optical transmittance of aged ICO/APC/ICO film.Burin-in process can obviously not influence the transparent characteristic of InCeO/Ag/InCeO film, because the distribution of the optical transmittance curve of Figure 12 a and Figure 12 b is similar to curve among Fig. 8 to Figure 11.
AFM observes and shows that although there is the influence of after annealing, aged ICO/APC/ICO film still has level and smooth surface, and the RMS roughness is similar to not aging ICO/APC/ICO film.
V. interlaminar bonding power
Utilize 3M adhesive tape 810, in the deposition attitude of different condition deposit, anneal and carry out the ICO/APC/ICO sample that overaging handles then and carried out interlaminar bonding power test (IAT).The results are shown in table 15 to table 19, they show, all samples (carried out aftertreatment or do not carry out aftertreatment) has all passed through IAT.In order further to determine the result of interlaminar bonding power test, cohesive force test his-and-hers watches 15 are tested to all samples in the table 19 between the score layer of utilization intersection once more, result and coming to the same thing that general interlaminar bonding power is tested.Figure 13 a and Figure 13 b show average peel force, they be from aged ICO/APC/ICO film and annealed and the interlaminar bonding power test and intersecting of aged ICO/APC/ICO film record the cohesive force test between score layer.Can find out that in two kinds of interlaminar bonding force test methods, peel force is numerically very approaching.In addition, seem to anneal and the average peel force of aged sample descended, as by as shown in the data among comparison diagram 13a and Figure 13 b.
Figure 14 shows and intersects the typical surface form that line peels off the ICO/APC/ICO film after the test.Can find out that the film surface is a cleaning and slick.Not can be observed from intersecting extended damage of scribe area or crackle.Interlaminar bonding power test result shows that the ICO/APC/ICO film is compared with the ICO/AAC/ICO film, has shown better interlaminar bonding power, because above-mentioned annealing and aged ICO/AAC/ICO sample generally can not be by 3M adhesive tape 810 interlaminar bonding power test.Yet, because all deposition ICO/APC/ICO samples that carry out or do not carry out after annealing and/or burin-in process have all passed through to adopt the interlaminar bonding power of 3M adhesive tape 810 to test, therefore for estimating the middle layer of ICO/APC/ICO film more accurately, it may be necessary continuing to carry out with new or high cohesive force adhesive tape that interlaminar bonding power tests.
VI. conclusion
The ICO/APC/ICO film can be deposited on the HC/Arton in the mode of roller to roller, its surface resistivity 5 Ω/square below, optical transmittance is more than 90%, and has smooth surface.
In the deposition of ICO layer, improve O
2Flow velocity still in the deposition process of ICO/APC/ICO film, can cause the speed of growth of ICO and APC layer to reduce to the not obviously influence of moiety of this film.
Improve O
2Flow velocity can improve optical transmittance, but the surface resistivity of ICO/APC/ICO film is not influenced.Reduce O
2Air pressure can help formed ICO/APC/ICO film to have the surface flatness of improvement.
The increase of APC thickness causes the surface resistivity of ICO/APC/ICO film to reduce.In the formation of ICO/APC/ICO film, be increased to 50nm by thickness with the ICO layer, the thickness with the APC layer is increased to 18nm simultaneously, can realize high optical transmittance more than 90% and 5 Ω/square below low surface resistivity.
After annealing is handled and is caused surface resistivity to descend 20%, and brightness increases by 2%.After annealing is handled the optical transmittance that also can increase the ICO/APC/ICO film slightly.
No matter be the film of deposition attitude or annealed film, on the surface of aged ICO/APC/ICO sample, all do not form observable defective or stain.The aged film has the surface resistivity of reduction and the optical transmittance and the brightness of raising.Preannealing is to the not influence of character of aged ICO/APC/ICO film.
The ICO/APC/ICO film has shown structural stability and the enhanced interlaminar bonding power improved.
Claims (48)
1. method that forms composite membrane, it comprises:
Flexible plastic substrates is provided; With
By film deposition techniques on described flexible plastic substrates successive sedimentation multilayer conductive metallic membrane to form composite membrane, described multilayer conductive metallic membrane comprises two layers being made by the alloy that is selected from Indium sesquioxide cerium and tin indium oxide, the thickness of each is 30nm to 60nm in described two encirclement alloy layers, described two layers surround silver, the alloy layer of palladium and copper, described silver, the thickness of the alloy layer of palladium and copper is 7nm to 20nm, and comprise 97% to 99% silver, 0.3% to 0.8% palladium, and 1.2% to 1.8% copper, wherein said composite membrane is at least 90% in the transmissivity of 550 nanometers.
2. method according to claim 1, wherein said two embracing layers are Indium sesquioxide ceriums.
3. method according to claim 1, wherein said two embracing layers are tin indium oxides.
4. method according to claim 1, wherein said two embracing layers are sedimentary by film deposition techniques, described film deposition techniques is selected from next group technology: sputter, chemical vapour deposition and laser ablation deposition.
5. method according to claim 4, wherein these two embracing layers are by sputtering sedimentation, and the described sputter of the alloy layer of these two embracing layers and described silver, palladium and copper is a dc magnetron sputtering.
6. method according to claim 5, the sputtering power of wherein said sputter are 60 watts to 100 watts.
7. method according to claim 5, wherein said two embracing layers are Indium sesquioxide ceriums, described Indium sesquioxide cerium layer is by carrying out sputter with 600 watts to 800 watts sputtering power and sedimentary, and the alloy layer of described silver, palladium and copper is to carry out sputter with 70 watts to 90 watts sputtering power.
8. method according to claim 5, wherein said two embracing layers are tin indium oxides, described indium tin oxide layer is by carrying out sputter with 600 watts to 800 watts sputtering power and sedimentary, and the alloy layer of described silver, palladium and copper is to carry out sputter with 70 watts to 100 watts sputtering power.
9. method according to claim 8, wherein said indium tin oxide layer are by carrying out sputter with 600 watts sputtering power and sedimentary, and the alloy layer of described silver, palladium and copper is to carry out sputter with 80 watts to 100 watts sputtering power.
10. method according to claim 1, further comprise be collected in composite membrane in the continuous roller and between described depositional stage sedimentary linear velocity be up to 4 feet per minute clocks.
11. method according to claim 10, wherein said embracing layer is a tin indium oxide, and linear velocity 0.3 feet per minute clock to the 1.2 feet per minute clock of described indium tin oxide layer between depositional stage.
12. method according to claim 10, wherein said embracing layer are the Indium sesquioxide ceriums, and linear velocity 0.3 feet per minute clock to the 1.2 feet per minute clock of described Indium sesquioxide cerium layer between depositional stage.
13. method according to claim 10, the linear velocity of the alloy layer of wherein said silver, palladium and copper between depositional stage are 0.7 feet per minute clock to 0.8 feet per minute clock.
14. method according to claim 1, it further is included in the surface that described deposition cleans described flexible plastic substrates before.
15. method according to claim 14, the described cleaning on the surface of wherein said flexible plastic substrates are to utilize to be selected from Ar+O
2, Ar and Ar+N
2Plasma body carry out.
16. method according to claim 1, wherein said two thickness that surround alloy layer are 30nm to 45nm, and the thickness of the alloy layer of described silver, palladium and copper is 12nm to 16nm.
17. method according to claim 1, wherein said flexible plastic substrates are selected from next group material: polyethylene terephthalate, naphthalic acid polyvinyl ester, polyethersulfone, polycarbonate, polysulfones, resol, Resins, epoxy, polyimide, polyether ester, polyetheramides, rhodia, aliphatic polyurethane, polyacrylonitrile, tetrafluoroethylene, poly(vinylidene fluoride), poly-Methyl Methacrylate and aliphatics or cyclic polyolefin.
18. method according to claim 1, wherein said flexible plastic substrates is a polyester.
19. method according to claim 1, wherein said flexible plastic substrates is strengthened with hard coat.
20. method according to claim 19, wherein said hard coat is an acrylic acid coatings.
21. method according to claim 1 further comprises the deposition after annealing of described composite membrane under envrionment conditions.
22. method according to claim 21, wherein said deposition after annealing were included under the temperature between 130 ℃ to 250 ℃, to described composite membrane annealing 0.5 hour to 2 hours.
23. method according to claim 1, wherein said two embracing layers are by the ion beam depositing deposition techniques.
24. a multi-layered electrode/underlying structure, it comprises:
Composite membrane, this composite membrane comprises:
At the described suprabasil the first layer that is selected from the alloy of Indium sesquioxide cerium and tin indium oxide, the thickness of described the first layer is 30nm to 60nm;
The alloy layer of the silver on described the first layer, palladium and copper, this alloy layer has the thickness of 7nm to 20nm, and comprises 97% to 99% silver, 0.3% to 0.8% palladium and 1.2% to 1.8% copper; With
The second layer of the alloy that is selected from Indium sesquioxide cerium and tin indium oxide on the alloy layer of described silver, palladium and copper, the thickness of the described second layer are 30nm to 60nm;
Wherein said composite membrane is at least 90% in the transmissivity of 550 nanometers; And by described compound film formed at least one electrode.
25. multi-layered electrode/underlying structure according to claim 24, wherein said multi-layered electrode/underlying structure is OLED.
26. multi-layered electrode/underlying structure according to claim 24, wherein said multi-layered electrode/underlying structure is PLED.
27. multi-layered electrode/underlying structure according to claim 24, the surfaceness of wherein said multi-layered electrode/underlying structure is less than 8nm.
28. multi-layered electrode/underlying structure according to claim 24, the driving voltage of wherein said multi-layered electrode/underlying structure is less than 20 volts.
29. multi-layered electrode/underlying structure according to claim 24 further is included in the electro-conductive material on the described composite membrane, wherein said electro-conductive material is a luminescence polymer material.
30. multi-layered electrode/underlying structure according to claim 24 further is included in the electro-conductive material on the described composite membrane, wherein said electro-conductive material is luminescent organic materials.
31. multi-layered electrode/underlying structure according to claim 24 further is included in the electro-conductive material on the described composite membrane, wherein said electro-conductive material is luminescent organo metallic material.
32. multi-layered electrode/underlying structure according to claim 29, wherein said electro-conductive material is a luminescence polymer, and it is selected from next group material: poly-right-phenylacetylene, and poly-dialkoxy phenylacetylene, Polythiophene, poly-fluorenes, polyphenylene, polyphenylacetylene, polyaniline, poly-3-alkylthrophene, poly-3-octyl group thiophene, and poly N-vinyl carbazole.
33. multi-layered electrode/underlying structure according to claim 32, wherein said luminescence polymer are poly-right-phenylacetylenes.
34. multi-layered electrode/underlying structure according to claim 32, wherein said luminescence polymer are poly-fluorenes.
35. multi-layered electrode/underlying structure according to claim 29, wherein said electro-conductive material is luminescent organic or organo metallic material, it is selected from next group material: oxine thing metal cation salt, trivalent metal quinoline thing complex compound, the quinoline thing complex compound of trivalent metal bridge joint, the bivalent metallic ion complex of Schiff base, tin (IV) metal complex, the metal acetylacetonates complex compound, in conjunction with being selected from 2-picolyl ketone, the metal bidentate ligand complex compound of the organic ligand of quinaldine based ketone of 2-and 2-neighbour-phenoxypyridines ketone, diphosphonate, divalent metal dicyano two sulphur synthetic fibre complex compounds, the molecule charge transfer complex, rare earth blended inner complex, 5-hydroxy quinoxaline metal complex, and three quinoline aluminums.
36. multi-layered electrode/underlying structure according to claim 24, the wherein said the first layer and the second layer comprise the Indium sesquioxide cerium, the thickness of each layer in the described the first layer and the second layer from 30 nanometers to 45 nanometers, and wherein the thickness of the alloy layer of silver, palladium and copper from 12 nanometers to 16 nanometers.
37. multi-layered electrode/underlying structure according to claim 24, the alloy layer of wherein said silver, palladium and copper comprise 98% silver, 0.5% palladium and 1.5% copper.
38. a composite membrane, it comprises:
Flexible plastic substrates;
At the described suprabasil the first layer that is selected from the alloy of Indium sesquioxide cerium and tin indium oxide, the thickness of described the first layer is 30nm to 60nm;
The alloy layer of the silver on described the first layer, palladium and copper, this alloy layer has the thickness of 7nm to 20nm, and comprises 97% to 99% silver, 0.3% to 0.8% palladium and 1.2% to 1.8% copper; With
The second layer of the alloy that is selected from Indium sesquioxide cerium and tin indium oxide on the alloy layer of described silver, palladium and copper, the thickness of the described second layer are 30nm to 60nm;
Wherein said composite membrane is at least 90% in the transmissivity of 550 nanometers.
39. according to the described composite membrane of claim 38, the resistivity of wherein said composite membrane be not more than 20 Ω/square, r.m.s. roughness is not more than 5nm, and the test of 180 ° of peel adhesion is born in big being enough to of interlaminar bonding power of described composite membrane.
40. according to the described composite membrane of claim 38, wherein said composite membrane further comprises the reinforcement hard coat, this reinforcement hard coat is in described flexible plastic substrates and be selected between the first layer of alloy of Indium sesquioxide cerium and tin indium oxide.
41. according to the described composite membrane of claim 40, the hard coat of wherein said reinforcement is an acrylic acid coatings.
42. according to the described composite membrane of claim 38, wherein said flexible plastic substrates is selected from next group material: polyethylene terephthalate, naphthalic acid polyvinyl ester, polyethersulfone, polycarbonate, polysulfones, resol, Resins, epoxy, polyimide, polyether ester, polyetheramides, rhodia, aliphatic polyurethane, polyacrylonitrile, tetrafluoroethylene, poly(vinylidene fluoride), poly-Methyl Methacrylate and aliphatics or cyclic polyolefin.
43. according to the described composite membrane of claim 42, wherein said flexible plastic substrates is a cyclic polyolefin.
44. according to the described composite membrane of claim 43, wherein said cyclic polyolefin is poly-Dicyclopentadiene (DCPD).
45. according to the described composite membrane of claim 42, wherein said flexible plastic substrates is a polyester.
46. according to the described composite membrane of claim 45, wherein said polyester is an aromatic polyester.
47. according to the described composite membrane of claim 38, the wherein said the first layer and the second layer comprise the Indium sesquioxide cerium, the thickness of each layer in the described the first layer and the second layer from 30 nanometers to 45 nanometers, and wherein the thickness of the alloy layer of silver, palladium and copper from 12 nanometers to 16 nanometers.
48. according to the described composite membrane of claim 38, the alloy layer of wherein said silver, palladium and copper comprises 98% silver, 0.5% palladium and 1.5% copper.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/286,205 US7217344B2 (en) | 2002-06-14 | 2002-11-01 | Transparent conductive film for flat panel displays |
| US10/286,205 | 2002-11-01 | ||
| PCT/US2003/034642 WO2004042108A2 (en) | 2002-11-01 | 2003-10-31 | Transparent conductive film for flat panel displays |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1729310A CN1729310A (en) | 2006-02-01 |
| CN1729310B true CN1729310B (en) | 2010-04-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2003801071748A Expired - Fee Related CN1729310B (en) | 2002-11-01 | 2003-10-31 | Transparent conductive film for flat panel displays |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7217344B2 (en) |
| EP (1) | EP1556525A2 (en) |
| CN (1) | CN1729310B (en) |
| AU (1) | AU2003287371A1 (en) |
| WO (1) | WO2004042108A2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8471457B2 (en) | 2008-01-31 | 2013-06-25 | Sumitomo Chemical Company, Limited | Transparent plate with transparent conductive film and organic electroluminescence element |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005108644A (en) * | 2003-09-30 | 2005-04-21 | Sanyo Electric Co Ltd | Organic el element |
| US7683107B2 (en) * | 2004-02-09 | 2010-03-23 | E.I. Du Pont De Nemours And Company | Ink jet printable thick film compositions and processes |
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| DE102007024152A1 (en) | 2007-04-18 | 2008-10-23 | Osram Opto Semiconductors Gmbh | Organic optoelectronic component |
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| CN110088609A (en) | 2016-11-30 | 2019-08-02 | 美国圣戈班性能塑料公司 | Electrode and electrode manufacturing method |
| KR102188997B1 (en) * | 2017-02-28 | 2020-12-09 | 동우 화인켐 주식회사 | Transparent film antenna |
| JP7133572B2 (en) | 2017-06-22 | 2022-09-08 | イーストマン ケミカル カンパニー | Physical vapor deposition electrodes for electrochemical sensors |
| CN112469562A (en) * | 2018-07-03 | 2021-03-09 | 深圳市柔宇科技股份有限公司 | Flexible composite film, preparation method thereof and display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| US6125226A (en) * | 1997-04-18 | 2000-09-26 | The Trustees Of Princeton University | Light emitting devices having high brightness |
| EP1043606A1 (en) * | 1999-04-06 | 2000-10-11 | Nippon Sheet Glass Co. Ltd. | Light transmitting electromagnetic wave filter and process for producing the same |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4166876A (en) * | 1977-03-28 | 1979-09-04 | Teijin Limited | Transparent, electrically conductive laminated structure and process for production thereof |
| DE69629613T2 (en) * | 1995-03-22 | 2004-06-17 | Toppan Printing Co. Ltd. | Multi-layer, electrically conductive film, transparent electrode substrate and liquid crystal display using this |
| WO2000026973A1 (en) * | 1998-11-02 | 2000-05-11 | Presstek, Inc. | Transparent conductive oxides for plastic flat panel displays |
| US20020110673A1 (en) * | 2001-02-14 | 2002-08-15 | Ramin Heydarpour | Multilayered electrode/substrate structures and display devices incorporating the same |
| JP3702859B2 (en) * | 2001-04-16 | 2005-10-05 | セイコーエプソン株式会社 | Electro-optical device and electronic apparatus |
| US6811815B2 (en) * | 2002-06-14 | 2004-11-02 | Avery Dennison Corporation | Method for roll-to-roll deposition of optically transparent and high conductivity metallic thin films |
-
2002
- 2002-11-01 US US10/286,205 patent/US7217344B2/en not_active Expired - Lifetime
-
2003
- 2003-10-31 CN CN2003801071748A patent/CN1729310B/en not_active Expired - Fee Related
- 2003-10-31 WO PCT/US2003/034642 patent/WO2004042108A2/en not_active Application Discontinuation
- 2003-10-31 EP EP03781604A patent/EP1556525A2/en not_active Withdrawn
- 2003-10-31 AU AU2003287371A patent/AU2003287371A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| US6125226A (en) * | 1997-04-18 | 2000-09-26 | The Trustees Of Princeton University | Light emitting devices having high brightness |
| EP1043606A1 (en) * | 1999-04-06 | 2000-10-11 | Nippon Sheet Glass Co. Ltd. | Light transmitting electromagnetic wave filter and process for producing the same |
| US20020086164A1 (en) * | 1999-04-06 | 2002-07-04 | Nippon Sheet Glass Co., Ltd. | Light transmitting electromagnetic wave filter and process for producing the same |
Non-Patent Citations (2)
| Title |
|---|
| andreas kloppel,bernd meyer ,jutta trube.influence of substrate temperature and sputtering atmosphereon electrical and optical properties of double silver layersystems.thin solid films392 2.2001,392(2),311-314. * |
| J.-Y.Kim,D.Sohn,E.-R.Kim.Polymer-based multi-layer conductive electrode film forplasticLCD applications.APPL.PHYS.A,Applied physics A72 6.2001,72(6),699-704. * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8471457B2 (en) | 2008-01-31 | 2013-06-25 | Sumitomo Chemical Company, Limited | Transparent plate with transparent conductive film and organic electroluminescence element |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1556525A2 (en) | 2005-07-27 |
| US20070026232A9 (en) | 2007-02-01 |
| WO2004042108A3 (en) | 2004-12-09 |
| AU2003287371A8 (en) | 2004-06-07 |
| AU2003287371A1 (en) | 2004-06-07 |
| US7217344B2 (en) | 2007-05-15 |
| CN1729310A (en) | 2006-02-01 |
| WO2004042108A2 (en) | 2004-05-21 |
| US20040086717A1 (en) | 2004-05-06 |
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