CN1727431A - 化学机械抛光二氧化硅和氮化硅的组合物和方法 - Google Patents
化学机械抛光二氧化硅和氮化硅的组合物和方法 Download PDFInfo
- Publication number
- CN1727431A CN1727431A CNA2005100884709A CN200510088470A CN1727431A CN 1727431 A CN1727431 A CN 1727431A CN A2005100884709 A CNA2005100884709 A CN A2005100884709A CN 200510088470 A CN200510088470 A CN 200510088470A CN 1727431 A CN1727431 A CN 1727431A
- Authority
- CN
- China
- Prior art keywords
- composition
- pvp
- polyvinylpyrolidone
- silicon
- polishing
- Prior art date
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- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 238000005498 polishing Methods 0.000 title claims abstract description 42
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 30
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 14
- 239000000126 substance Substances 0.000 title description 16
- 150000001875 compounds Chemical class 0.000 claims abstract description 25
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229960001866 silicon dioxide Drugs 0.000 claims description 27
- -1 cation compound Chemical class 0.000 claims description 24
- 235000012431 wafers Nutrition 0.000 claims description 22
- 239000003082 abrasive agent Substances 0.000 claims description 20
- 150000005846 sugar alcohols Polymers 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 229920002125 Sokalan® Polymers 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000004584 polyacrylic acid Substances 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 150000003973 alkyl amines Chemical class 0.000 claims description 2
- 150000004982 aromatic amines Chemical class 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims description 2
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract description 9
- 229920000036 polyvinylpyrrolidone Polymers 0.000 abstract description 4
- 239000001267 polyvinylpyrrolidone Substances 0.000 abstract description 4
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 abstract description 4
- 150000001767 cationic compounds Chemical class 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 13
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 12
- 238000009413 insulation Methods 0.000 description 10
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 150000001721 carbon Chemical group 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 150000001991 dicarboxylic acids Chemical class 0.000 description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000000908 ammonium hydroxide Substances 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- LVHBHZANLOWSRM-UHFFFAOYSA-N itaconic acid Chemical compound OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000005250 alkyl acrylate group Chemical group 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- LDHQCZJRKDOVOX-UHFFFAOYSA-N 2-butenoic acid Chemical compound CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical class C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 150000001450 anions Chemical group 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N glutaric acid Chemical compound OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- JHPBZFOKBAGZBL-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylprop-2-enoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)=C JHPBZFOKBAGZBL-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- IJVRPNIWWODHHA-UHFFFAOYSA-N 2-cyanoprop-2-enoic acid Chemical compound OC(=O)C(=C)C#N IJVRPNIWWODHHA-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- BLFCQOINAPWLMV-UHFFFAOYSA-N CC(O)=O.CC(O)=O.NC(N)=N Chemical compound CC(O)=O.CC(O)=O.NC(N)=N BLFCQOINAPWLMV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- GYCMBHHDWRMZGG-UHFFFAOYSA-N Methylacrylonitrile Chemical compound CC(=C)C#N GYCMBHHDWRMZGG-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000004103 aminoalkyl group Chemical group 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-M benzoate Chemical compound [O-]C(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-M 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- FDOWWCFFWMGFGQ-UHFFFAOYSA-N but-3-enoic acid Chemical compound OC(=O)CC=C.OC(=O)CC=C FDOWWCFFWMGFGQ-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- OVHKECRARPYFQS-UHFFFAOYSA-N cyclohex-2-ene-1,1-dicarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC=C1 OVHKECRARPYFQS-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 description 1
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- AFSIMBWBBOJPJG-UHFFFAOYSA-N ethenyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC=C AFSIMBWBBOJPJG-UHFFFAOYSA-N 0.000 description 1
- XEKOWRVHYACXOJ-UHFFFAOYSA-N ethyl acetate Substances CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000001188 haloalkyl group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000010458 rotten stone Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
本发明提供一种用于抛光半导体晶片上的二氧化硅和氮化硅的水性组合物,包括0.01-5wt%的羧酸类聚合物,0.02-6wt%磨料,0.01-10wt%聚乙烯吡咯烷酮,0-5wt%阳离子化合物,0-5wt%的两性离子化合物和余量的水,其中聚乙烯吡咯烷酮的平均分子量在100g/mol-1,000,000g/mol之间。
Description
技术领域
本发明涉及半导体晶片材料的化学机械平坦化(CMP),更具体地,涉及抛光在浅槽绝缘(STI,shallow trench isolation)工艺中半导体晶片上二氧化硅和氮化硅的CMP组合物和方法。
背景技术
由于器件的尺寸降低以及微电子电路集成度的增加,要求绝缘结构的尺寸也相应缩小。这种缩小还可以额外地提高形成有效绝缘结构的重复性,同时占据最小的基材表面。
STI技术是一种应用广泛的半导体摩擦方法,它能形成绝缘结构,以使形成在集成电路中的各种活性元件电绝缘。相对于传统的LOCOS(硅局部氧化)技术,采用STI技术的一个主要优点是对于CMOS(互补金属氧化物半导体)IC器件具有高可缩放性,制造亚微米级集成度。另一个优点是,STI技术有助于防止所谓鸟嘴侵蚀的产生,其是形成绝缘结构的LOCOS技术的特征。
在STI技术中,第一步是在基材的预定位置上生成若干槽(trench),通常采用各向异性蚀刻法。其次,在各个槽中沉积二氧化硅。然后用CMP法抛光二氧化硅,往下抛光到氮化硅层(阻挡层)就形成了STI结构。为了能有效地进行抛光,抛光浆料必需相对于二氧化硅对氮化硅的去除速度具有高选择性(即“选择性”)。
Kido等人的美国专利申请公开号2002/0045350公开了用于抛光半导体器件的已知磨料组合物,它包括氧化铈和水溶性有机化合物。可选地,该组合物可包括粘度调节剂、缓冲剂、表面活性剂和螯合剂,但是没有对其进行详细说明。尽管Kido的组合物能提供合适的凹陷(dishing)性能,但是微电子电路中不断增长的集成度要求对组合物和方法进行改进。
因此,需要用于二氧化硅(硅土)和氮化硅的化学机械抛光的组合物和方法,以用于对凹陷有所改进的浅槽绝缘工艺。
发明内容
第一方面,本发明提供了一种用于抛光半导体晶片上的二氧化硅和氮化硅的水性组合物,包括0.01-5wt%的羧酸聚合物、0.02-6wt%的磨料、0.01-10wt%的聚乙烯基吡咯烷酮、0-5wt%的阳离子化合物、0-5wt%的两性离子化合物和余量的水,其中聚乙烯基吡咯烷酮的平均分子量在100g/mol-1,000,000g/mol之间。
第二方面,本发明提供一种抛光半导体晶片上的二氧化硅和氮化硅的方法,它包括:使晶片上的二氧化硅和氮化硅与抛光液接触,所述抛光液包括0.01-5wt%的羧酸聚合物、0.02-6wt%的磨料、0.01-10wt%的聚乙烯基吡咯烷酮、0-5wt%的阳离子化合物、0-5wt%的两性离子化合物和余量的水,其中聚乙烯基吡咯烷酮的平均分子量在100g/mol-1,000,000g/mol之间;用抛光垫抛光所述二氧化硅和氮化硅。
具体实施方式
该组合物和方法在浅槽绝缘工艺中能意想不到地抑制半导体晶片上的二氧化硅的去除。更好地,该组合物包括在抛光过程中提高选择性和可控性的聚乙烯基吡咯烷酮。特别地,本发明提供一种用于抛光半导体晶片上的二氧化硅和氮化硅的水性组合物,它包括聚乙烯基吡咯烷酮、羧酸聚合物、磨料和余量的水。可选地,本发明的混合物(compound)可以包括阳离子化合物,以促进平坦化,调节晶片清理时间和二氧化硅的去除。另外,所述组合物可选地包括两性离子化合物,以促进平坦化以及作为氮化物去除抑制剂。
更好地,新的抛光组合物包括约0.01-10wt%的聚乙烯基吡咯烷酮,以在去除氧化物过程中提供压力阀值响应。优选地,所述聚乙烯基吡咯烷酮的量在0.015-5wt%之间。更优选地,所述聚乙烯基吡咯烷酮的量在0.02-0.5wt%之间。除此以外,可采用更高数均分子量和更低数均分子量的聚乙烯基吡咯烷酮的混合物。
此外,聚乙烯基吡咯烷酮的重均分子量通过凝胶渗透色谱法(GPC)测定为100-1,000,000g/mol。优选地,聚乙烯基吡咯烷酮的重均分子量是500-500,000g/mol。更优选地,聚乙烯吡咯烷酮的重均分子量在约1,500-10,000g/mol之间。
更好地,除了聚乙烯基吡咯烷酮,所述组合物包括0.01-5wt%的羧酸聚合物,用作磨料颗粒(在后文论及)的分散剂。优选地,该组合物包括0.05-1.5wt%的羧酸聚合物。还有,所述聚合物的数均分子量优选为4,000-1,500,000。此外,还可采用更高数均分子量和更低数均分子量的羧酸聚合物的混合物。这些羧酸聚合物通常以溶液形式存在,但也可以是水性分散体形式。更好地,所述羧酸聚合物可作为磨料颗粒的分散剂(以下论及)。上述聚合物的数均分子量由GPC法测定。
所述羧酸聚合物优选由不饱和一元羧酸和不饱和二元羧酸生成。典型的不饱和一元羧酸单体含3-6个碳原子,它包括丙烯酸、低聚丙烯酸、甲基丙烯酸、巴豆酸和乙烯基乙酸(vinyl acetic acid)。典型的不饱和二元羧酸含4-8个碳原子,它包括其酸酐,例如马来酸、马来酸酐、富马酸、戊二酸、衣康酸、衣康酸酐和环己二酸(cyclohexene dicarboxylic acid)。此外,还可采用上述酸的水溶性盐。
特别有用的是数均分子量为1,000-1,500,000、优选3,000-250,000、更优选20,000-200,000的“聚(甲基)丙烯酸”。此处所用的术语“聚(甲基)丙烯酸”定义为丙烯酸聚合物、甲基丙烯酸聚合物、或丙烯酸和甲基丙烯酸的共聚物。特别优选的是不同数均分子量的聚(甲基)丙烯酸的混合物。在这些聚(甲基)丙烯酸的混合物和掺合物中,数均分子量为1,000-100,000、优选4,000-40,000的较低数均分子量聚(甲基)丙烯酸与数均分子量为150,000-1,500,000、优选200,000-300,000的较高数均分子量聚(甲基)丙烯酸结合使用。典型地,较低数均分子量聚(甲基)丙烯酸与较高数均分子量聚(甲基)丙烯酸的重量百分比在约10∶1和1∶10之间,优选5∶1到1∶5,更优选3∶1到2∶3。优选的混合物包括数均分子量约20,000的聚(甲基)丙烯酸和数均分子量约200,000的聚(甲基)丙烯酸,其重量比为2∶1。
另外,也可以采用含羧酸的共聚物和三元聚合物,其中羧酸组分占所述聚合物重量的5-75wt%。上述聚合物的典型例子是(甲基)丙烯酸和丙烯酰胺或甲基丙烯酰胺的聚合物;(甲基)丙烯酸和苯乙烯以其他乙烯基芳香单体的聚合物;(甲基)丙烯酸烷基酯(丙烯酸酯或甲基丙烯酸酯)和一元羧酸或二元羧酸(例如,丙烯酸或甲基丙烯酸或衣康酸);具有取代基(例如,卤素(即氯、氟、溴)、硝基、氰基、烷氧基、卤代烷基、羧基、氨基、氨基烷基)的取代乙烯基芳香单体的聚合物和不饱和一元羧酸或不饱和二元羧酸以及(甲基)丙烯酸烷基酯的聚合物;包括氮环的单烯键式(monethylenically)不饱和单体(例如乙烯基吡啶、烷基乙烯基吡啶、乙烯基丁内酰胺、乙烯基己内酰胺)和不饱和一元羧酸或不饱和二元羧酸的聚合物;烯烃(例如丙烯、异丁烯、或含10-20个碳原子的长链烷基烯烃)和不饱和一元羧酸或不饱和二元羧酸的聚合物;乙烯醇酯(vinyl alcohol esters)(例如,乙酸乙烯酯和硬脂酸乙烯酯)或卤代乙烯(例如辐乙烯、氯乙烯、偏二氟乙烯)或乙烯腈(vinyl nitrile)(例如丙烯腈和甲基丙烯腈)和不饱和一元羧酸或不饱和二元羧酸的聚合物;在烷基中含1-24个碳原子的(甲基)丙烯酸烷基酯和不饱和一元羧酸(例如,丙烯酸或甲基丙烯酸)的聚合物,。这些仅为本发明的新抛光组合物可采用的多种聚合物的部分例子。另外,可以采用可生物降解、可光降解的或可以其他方式降解的聚合物。上述可生物降解的聚合物的例子是包括聚(丙烯酸共2-氰基丙烯酸甲酯)(poly(acrylate comethyl 2-cyanoacrylate))链段的聚丙烯酸聚合物。
更好地,所述抛光组合物包括0.2-6wt%的有助于去除二氧化硅的磨料。在这个范围内,希望磨料的数量大于或等于0.5wt%。另外,在这个范围内,希望数量小于或等于2.5wt%。
磨料的平均粒径为50-200纳米(nm)。具体起见,粒径指磨料的平均粒径。更优选地,希望磨料的平均粒径在80-150nm之间。磨料粒径减小到小于或等于80nm可以提高抛光组合物的平坦化效果,但是,同时使去除速度下降。
磨料的例子包括无机氧化物、无机氢氧化物、金属硼化物、金属碳化物、金属氮化物、聚合物颗粒和至少包括一种前述物质的混合物。合适的无机氧化物包括例如二氧化硅(SiO2)、氧化铝(Al2O3)、氧化锆(ZrO2)、氧化铈(CeO2)、氧化锰(MnO2)、或至少包括一种前述氧化物的混合物。如果需要,也可采用这些无机氧化物的改进形式,例如聚合物涂覆的无机氧化物颗粒和无机物涂覆的颗粒。合适的金属碳化物、金属硼化物、金属氮化物包括例如碳化硅、氮化硅、碳氮化硅(SiCN)、碳化硼、碳化钨、碳化锆、硼化铝、碳化钽、碳化钛或至少包括一种前述金属碳化物、硼化物、氮化物的混合物。如果需要也可采用金刚石作为磨料。其他可选磨料还包括聚合物颗粒和涂覆的聚合物颗粒。优选磨料为氧化铈。
该组合物在余量为水的溶液中在宽的pH范围内均有功效。该溶液的有效pH范围至少为4-9。此外,更好地,该溶液采用余量的去离子水来限制随附的杂质。本发明的抛光液的pH值优选4.5-8,更优选pH为5.5-7.5。调节本发明组合物的pH值的酸是例如硝酸、硫酸、盐酸、磷酸等。调节本发明组合物的pH值的碱的例子有氢氧化铵和氢氧化钾。
可选地,所述组合物优选含有0-5wt%的两性离子化合物,以促进平坦化并作为氮化物去除的抑制剂。更好地,该组合物包含0.01-1.5wt%的两性离子化合物。本发明的两性离子化合物可更好地促进平坦化并可抑制氮化物去除。
“两性离子化合物”这个术语表示一种包括大致相等比例的阳离子和阴离子取代基的化合物,其中所述阳离子和阴离子取代基由例如-CH2-基团等的物理桥键(physical bridge)连接,因而该组合物总体上呈中性。本发明的两性化合物包括如下结构:
其中n是整数,Y包括氢或烷基,Z包括羧基、硫酸根或氧,M包括氮、磷或硫原子,X1、X2和X3各自包括选自包括氢、烷基、芳基的取代基。
如此处所定义的,“烷基”这个术语(或烷基-或烷-)代表取代或未取代、直链或支链或环状烃链,它优选含1-20个碳原子。烷基包括例如甲基、乙基、丙基、异丙基、环丙基、丁基、异丁基、叔丁基、仲丁基、环丁基、戊基、环戊基、己基和环己基。
“芳基”这个术语指取代或未取代的芳香碳环基团,它优选包含6-20个碳原子。芳基可以是单环或多环的。芳基包括例如苯基、萘基、二苯基(biphenyl)、苄基、甲苯基、二甲苯基、苯乙基、苯甲酸根、烷基苯甲酸根、苯胺(aniline)、N-烷基取代苯胺基(N-alkylanilino)。
优选的两性离子化合物包括例如甜菜碱。本发明的优选的甜菜碱是N,N,N-三甲基胺基乙酸盐(acetate),如下式所示:
可选地,本发明的组合物可包括0-5wt%的阳离子化合物。优选地,所述组合物可选包括0.01-1.5wt%的阳离子化合物。本发明的阳离子化合物更好地可促进平坦化,调节晶片清除时间并作为氧化物去除抑制剂。优选的阳离子化合物包括烷基胺、芳基胺、季铵化合物和醇胺。阳离子化合物的例子包括甲基胺、乙基胺、二甲基胺、二乙基胺、三甲基胺、三乙基胺、苯胺、氢氧化四甲基铵、氢氧化四乙基铵、乙醇胺和丙醇胺。
因此,本发明提供一种用于抛光浅槽绝缘工艺中半导体晶片上的二氧化硅和氮化硅的组合物。更好地,该组合物包括可提高凹陷性能的聚乙烯基吡咯烷酮。特别地,本发明提供一种用于抛光半导体晶片上的二氧化硅和氮化硅的水性组合物,它包括0.01-5wt%的羧酸聚合物、0.02-6wt%的磨料、0.01-10wt%的聚乙烯基吡咯烷酮、0-5wt%的阳离子化合物、0-5wt%的两性离子化合物和余量的水,其中聚乙烯基吡咯烷酮的平均分子量在100g/mol-1,000,000g/mol之间。本发明在pH4-9之间显示出阀值压力响应特别地有所提高。
另外,本发明在采用抛光垫的时候特别有效,可以降低晶片轨迹中心或附近的磨损速度。相对于晶片的其他区域,浅槽绝缘浆料经常表现出“中心加速”现象(即,在晶片轨迹中心或附近抛光更快)。本发明人发现,当采用在晶片轨迹中心或附近对晶片的破坏性磨损速度较低的抛光垫时,用本发明的组合物进行抛光可减少中心加速现象。换句话说,抛光垫的槽设置成可以在晶片轨迹附近减少抛光。抛光垫可以是多孔的、无孔的或二者结合。另外,抛光垫的槽可以设计成任何所需的形状或结构,例如,螺旋状、圆形的、辐射状、格子形状或上述形状的组合。特别有效的槽结构是螺旋-辐射-螺旋结构。
实施例
在实施例中,数字表示本发明的实施例,字母表示对比例。所有的例子中的溶液包括1.8wt%二氧化铈、0.27wt%的聚丙烯酸、0.5wt%的甜菜碱和0.15wt%的乙醇胺。本发明的实施例包括0.1wt%的聚乙烯基吡咯烷酮。浆料通过将磨料份和化学试剂份混合制备。磨料份如下制备,即用铲式混合器(blade mixer)将聚丙烯酸浓缩物(concentrate)溶解在去离子水,然后将二氧化铈浓缩物加入到聚丙烯酸溶液。然后,二氧化铈-丙烯酸-水混合物用硝酸或氢氧化铵滴定。混合物然后加料到高剪力Kady研磨机中。化学试剂份如下制备,即将所有其余化学试剂溶解在适量的去离子水中,用铲式混合器混合,并用硝酸或氢氧化铵滴定到所需的最终pH值。最终的浆料通过磨料份和化学试剂份混合并滴定到所需pH而得到。
实施例1
本试验测定了本发明的浆料在去除二氧化硅时对阀值压力响应的效果。特别地,测试了聚乙烯基吡咯烷酮在去除二氧化硅时对阀值压力响应的效果。采用IC1000TM聚氨酯抛光垫(Rohm and Haas Electronic Materials CMP公司)的IPEC472DE 200mm抛光机在向下压力3-9psi、抛光液流速为150毫升/分钟、平台(platen)速度为52RPM、支架速度为50RPM的条件对样品进行平坦化。抛光液的pH用硝酸或氢氧化铵调节到6.5。所有溶液余量为去离子水。
表1
试样 | DF(psi) | TEOS(埃/分) |
A | 3 | 1296 |
B | 4 | 1994 |
C | 5 | 2451 |
D | 6 | 2971 |
E | 7 | 3343 |
F | 8 | 3807 |
G | 9 | 4191 |
1 | 3 | 100 |
2 | 4 | 100 |
3 | 5 | 350 |
4 | 6 | 2093 |
5 | 7 | 3099 |
6 | 8 | 3700 |
7 | 9 | 4299 |
如上表1所示,加入聚乙烯基吡咯烷酮为对于二氧化硅的组合物提供了阀值压力响应。特别地,加入聚乙烯吡咯烷酮可以提高在去除二氧化硅时浆料的压力阀值响应。例如,试样A浆料去除TEOS为1296埃/分,与试样1比较,试样1去除TEOS为100埃/分。进一步地,当压力从4psi增加到6psi时,试样B到试样D的TEOS的去除速率从1994埃/分增加到2971埃/分,而试样2到试样4的TEOS去除速度仅从100埃/分增加到2093埃/分。
实施例2
本实验测定了本发明的浆料在氧化物去除时阀值压力响应的效果。特别地,测定了聚乙烯基吡咯烷酮在10%槽氧化物的凹陷方面的效果。10%槽氧化物此处定义为成列的重复结构的槽,其活性宽度/(槽宽度+活性宽度)×100%=10%。例如,如果槽宽度+活性宽度=100微米,10%槽具有90微米的宽度。所有的条件与实施例1类似,不同在于向下压力保持在5psi。
表2
试样 | 时间(秒) | 厚度(埃) |
H | 0 | 6100 |
60 | 5379 | |
120 | 4854 | |
150 | 4539 | |
210 | 3959 | |
8 | 0 | 6100 |
60 | 5746 | |
120 | 5585 | |
180 | 5568 |
如上表2所示,加入聚乙烯基吡咯烷酮提供了对于所述槽氧化物的组合物的压力无关响应。特别地,加入聚乙烯基吡咯烷酮通过保持TEOS的厚度提高浆料的凹陷性能。换句话说,组合物提供一个宽的过度抛光的窗口(overpolish window)。注意,示例性的槽可具有约5000埃的厚度。例如,试样H浆料在抛光60秒后,将槽氧化物的厚度从6100埃去除到5379埃,而试样8浆料在60秒的抛光后,将槽氧化物的厚度从6100埃去除到5746埃。进一步地,试样H浆料在150秒的抛光后,将槽氧化物的厚度从6100埃去除到4539埃,而试样9浆料在180秒抛光后,仅仅将槽氧化物的厚度从6100埃轻微去除到5568埃。
相应地,本发明提供一种用于抛光浅槽绝缘工艺中半导体晶片上二氧化硅和氮化硅的组合物。更好地,该组合物包括在抛光过程中提高选择性和可控性的聚乙烯基吡咯烷酮。特别地,本发明提供一种用于抛光半导体晶片的二氧化硅和氮化硅的水性组合物,它包括聚乙烯基吡咯烷酮、羧酸聚合物、磨料和余量的水。可选地,本发明的混合物可以包括阳离子化合物,以促进平坦化,调节晶片清理时间和二氧化硅去除。另外,所述组合物可选地包括两性离子化合物,以促进平坦化以及作为氮化物去除抑制剂。
Claims (10)
1.一种用于抛光半导体晶片上的二氧化硅和氮化硅的水性组合物,它包括0.01-5wt%的羧酸聚合物、0.02-6wt%的磨料、0.01-10wt%的聚乙烯基吡咯烷酮、0-5wt%的阳离子化合物、0-5wt%的两性离子化合物和余量的水,所述聚乙烯基吡咯烷酮的平均分子量在100g/mol-1,000,000g/mol之间。
2.如权利要求1所述的组合物,其特征在于所述组合物包括0.02-1wt%的聚乙烯基吡咯烷酮。
3.如权利要求1所述的组合物,其特征在于所述聚乙烯基吡咯烷酮的平均分子量在1,500g/mol-10,000g/mol之间。
5.如权利要求1所述的组合物,其特征在于所述羧酸聚合物是聚丙烯酸。
6.如权利要求1所述的组合物,其特征在于所述阳离子化合物选自烷基胺、芳基胺、季铵化合物和醇胺。
7.如权利要求1所述的组合物,其特征在于所述磨料是二氧化铈。
8.如权利要求1所述的组合物,其特征在于所述水性化合物的pH值为4-9。
9.一种抛光半导体晶片上二氧化硅和氮化硅的方法,它包括:
使晶片上的二氧化硅和氮化硅与抛光组合物接触,所述抛光组合物包括0.01-5wt%的羧酸聚合物、0.02-6wt%的磨料、0.01-10wt%的聚乙烯基吡咯烷酮、0-5wt%的阳离子化合物、0-5wt%的两性离子化合物和余量的水,所述聚乙烯基吡咯烷酮的平均分子量在100g/mol-1,000,000g/mol之间;
用抛光垫抛光所述二氧化硅和氮化硅。
10.如权利要求9所述的方法,其特征在于所述组合物包括0.02-1wt%的聚乙烯基吡咯烷酮。
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2004
- 2004-07-28 US US10/900,703 patent/US20060021972A1/en not_active Abandoned
-
2005
- 2005-07-20 DE DE102005033951A patent/DE102005033951A1/de not_active Withdrawn
- 2005-07-20 KR KR1020050065749A patent/KR20060053942A/ko not_active Application Discontinuation
- 2005-07-25 TW TW094125075A patent/TW200611966A/zh unknown
- 2005-07-28 FR FR0508061A patent/FR2873709A1/fr active Pending
- 2005-07-28 CN CNB2005100884709A patent/CN100350567C/zh not_active Expired - Fee Related
- 2005-07-28 JP JP2005218642A patent/JP2006041535A/ja active Pending
-
2006
- 2006-11-01 US US11/591,382 patent/US20070045234A1/en not_active Abandoned
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CN102165564A (zh) * | 2008-09-26 | 2011-08-24 | 罗地亚管理公司 | 用于化学机械抛光的磨料组合物及其使用方法 |
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CN115926629B (zh) * | 2022-12-30 | 2023-12-05 | 昂士特科技(深圳)有限公司 | 具有改进再循环性能的化学机械抛光组合物 |
Also Published As
Publication number | Publication date |
---|---|
TW200611966A (en) | 2006-04-16 |
DE102005033951A1 (de) | 2006-03-23 |
US20070045234A1 (en) | 2007-03-01 |
JP2006041535A (ja) | 2006-02-09 |
US20060021972A1 (en) | 2006-02-02 |
CN100350567C (zh) | 2007-11-21 |
KR20060053942A (ko) | 2006-05-22 |
FR2873709A1 (fr) | 2006-02-03 |
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