CN1723571A - 微机电系统装置内结构的机电行为的控制 - Google Patents
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Abstract
在一个实施例中，本发明提供一种制造微机电系统装置的方法。该方法包括制造第一层(14)，该层包括具有特征机电响应，和特征光学响应的膜，其中该特征光学响应是需要的而特征机电响应是不需要的；并通过至少降低在微机电系统装置驱动(activation)期间其上形成的电荷而修改第一层的特征机电响应。
Description
技术领域
本发明涉及微机电系统装置。具体地，本发明涉及微机电系统装置内薄膜结构并涉及这样的薄膜结构的机电和光学响应。
背景技术
现在，广泛的微机电系统(MEMS)装置可用微制造技术制造。这些MEMS装置的例子包括马达，泵，阀门，开关，传感器，像素，等。
通常这些MEMS装置利用不同领域，如光学、电气和机械领域的原理和现象。这些原理和现象虽然在宏观上看起来难于利用，但在MEMS装置的微观世界中是十分有用的，在MEMS装置中这些现象被放大。例如，虽然通常在宏观世界被认为太微弱而无法利用的静电力在MEMS装置的微观世界足以以高速和低功率消耗来驱动这些装置。
用在MEMS装置中的材料通常是基于它们光学、电气、和机械领域的本征特性和对如激励或驱动电压(actuation voltage)的输入的特征响应选择的。
影响MEMS装置制造的一个问题是在某些情形中，对输入，如对入射光的光学响应具有高度需要的响应的材料也对输入，例如，对驱动或激励电压的机电响应有不需要的响应。为了克服或至少减少不需要的响应，必须以大的成本发现或开发新材料。
MEMS装置的制造的另一个问题是有时根据其特征响应选择的材料可能由于暴露于化学试剂而被损伤，该化学试剂是在具体的微制造过程中使用。这引起材料对输入的特征响应减弱。
发明内容
在一个实施例中，本发明提供一种用于制造微机电系统装置的方法。该方法包括制造第一层，该第一层包括具有特征机电响应，和特征光学响应的膜或结构化膜，其中特征光学响应是需要的，而特征机电响应是不需要的；和通过操纵在微机电系统装置驱动期间第一层上累积的电荷而修改第一层的特征机电响应。
附图说明
图1和图2分别示出未驱动状态的和驱动状态的MEMS装置的方框图；
图3示出图1和2中用于MEMS装置的驱动和释放电压的图；
图4示出按照本发明的一个实施例用于MEMS装置的薄膜叠层的实施例；
图5示出MEMS装置的滞后曲线，该MEMS装置包括示于图4中的薄膜叠层；
图6示出用于MEMS装置的薄膜叠层的另一个实施例；
图7示出MEMS装置的滞后曲线，该MEMS装置包括示于图6中的薄膜叠层；
图8a示出按照本发明的一个实施例的MEMS装置中静电流流动系统的方框图；
图8b示出图8a中静电流流动系统的示意图，说明系统的操作原理；以及
图9示出按照本发明的MEMS装置的另一个实施例。
具体实施方式
微机电系统(MEMS)装置内的具体结构或层对于其对入射光形式的输入的光学响应是需要的，但同时，对驱动或激励电压形式的输入有不需要的机电响应。本发明公开用于操纵或控制这种结构或层的机电响应的技术，因此至少减少不需要的机电响应。
作为MEMS装置的说明性的而非限制性的例子，考虑示于图1中的干涉调制器(IMOD)装置10。参考图1，可以看到为了说明的目的，IMOD装置10被极大地简化以便使本发明的方案更清楚。
IMOD装置10包括透明层12和反射层14，反射层14通过空气间隙16与透明层12隔开。透明层14由支柱18支撑并可朝透明层12静电偏移从而靠近空气间隙16。连接至驱动机构22上的电极20用来引起反射层14的静电偏移。图1示出未驱动或未偏移状态下的反射层14，而图2示出驱动或偏移状态下的反射层14。反射层14通常被选择用来在其与透明层12接触时产生需要的对入射光的光学响应。在一种IMOD设计中，透明层12可包括SiO2。电极20和透明层12在衬底24上形成。衬底24，和其上的电极20，和透明层12被称为“薄膜叠层”。
通常，多个IMOD装置10被制造成大阵列以便在反射性显示器中形成像素。在这样反射性显示器中，每个IMOD装置10基本定义一个像素，其在未驱动状态时具有特征光学响应，并在驱动状态时具有特征光学响应。可选择透明层12和空气间隙16的大小以便在未驱动状态时反射性显示器的IMOD可反射红，蓝，或绿光，且在驱动状态时吸收光。
可以理解在反射性显示器操作过程中，IMOD装置10被快速激励，并被去激励以传输信息。IMOD装置10的反射层14被向透明层12静电驱动，且当IMOD 10被去激励时，允许反射层14返回至未驱动状态。为了将反射层14保持在驱动的状态下，向每个IMOD装置10施加偏压。
如果驱动电压Vactuation等于释放电压Vrelease，那么选择适当的偏压Vbias就会变得极度困难，其中驱动电压被定义为静电驱动IMOD装置的反射层14至如图2所示的其驱动状态所需的电压，释放电压被定义为反射层14返回至如图1所示的其未偏移状态的电压，而偏压可施加至反射性显示器中所有IMOD 10以将反射性显示器内各个IMOD装置10的反射层14保持在驱动状态。其原因是反射性显示器内每个IMOD10可具有稍微的变化，例如，层12，14等的厚度的变化，实际上这导致每个IMOD 10的释放电压Vrelease不同。进一步，由于线电阻，基于在显示器内的位置，实际施加至每个IMOD 10上的电压也将有变化。这使得为Vbias选择值，即使不是不可能，但也很困难，该偏压将各个IMOD 10的反射性层14保持在反射性显示器内处于驱动的状态。这可参考图3得到解释，图3示出观察到的IMOD 10的反射层14的滞后行为，其中透明层12包括SiO2。
参考图3，示出了对于包括SiO2透明层的IMOD 10的曲线30，其X轴表示施加的电压(以伏特表示)，Y轴以伏特表示测量的光学响应。如可看到的那样，反射层14的驱动发生在12.5伏特，即Vactuation等于12.5伏特，且当施加的电压落到12.5伏特以下，即Vrelease等于12.5伏特时，反射层14返回至其未驱动的状态。因此IMOD装置10中的反射层14没有显示出滞后，IMOD装置10中透明层仅包括SiO2。因此，如果反射性显示器是用IMOD装置10制造的，每个IMOD装置10包括仅具有SiO2的透明层12，为Vbias选择值将是不可能的。例如，如果Vbias被选择为12.5伏特，由于反射性显示器中IMOD装置10中的变化，对于至少某些IMOD装置10，12.5伏特的Vbias将不能保持IMOD装置10中的反射层14处于驱动状态。
为了选择Vbias，该Vbias足够保持反射性显示器中各个IMOD装置10的反射层14处于驱动状态，反射性显示器中各个IMOD装置10的每个反射层14显示某种程度的滞后是需要的，该滞后被定义为Vactuation和Vrelease之间的非零差。
可以理解，每个IMOD装置10的反射层14的机电响应是由反射层14的机电特性和透明层12的电气特性决定的。在一个特殊的IMOD装置设计中，透明层12包括SiO2，其在反射层14与其接触时给出所需的光学响应。然而，包括SiO2的透明层12具有一定的电气特征或特性(SiO2捕获负电荷)，该特性影响反射层14的滞后行为。因此，除了影响反射层14的滞后行为的不需要的对驱动或驱动电压的机电响应，透明层12还具有需要的光学响应。
按照本发明的一个实施例，透明层12的机电行为可通过添加另外的层至薄膜叠层而改变。这另外的层至少最小化或补偿透明层12对反射层14的滞后行为的影响。
在本发明的一个实施例中，另外的层包括Al2O3，其是按照公知的沉积技术沉积于透明层12上。这导致如图4所示的薄膜叠层40，该薄膜叠层包括：衬底42、电极44、SiO2反射层46、和用作电荷捕获层的Al2O3层48。
图5示出包括薄膜叠层40的IMOD装置10的滞后曲线50。如滞后曲线30所示，X轴绘出所施加的以伏特表示的电压，而Y轴绘出以伏特表示的光学响应。滞后曲线50显示由Vactuation(7.8伏特)和Vrelease(5.0伏特)之间的差定义的2.8伏特的滞后窗口(hysteresis window)。当反射性显示器中各个IMOD 10每个都具有反射层14时，可以看到可以为Vbias在5伏特和7.8伏特之间选择值，该反射层14按照滞后曲线50显示滞后，该Vbias有效地执行保持反射性显示器中每个IMOD装置10的反射层14于其驱动状态的功能。在本发明的另一个实施例中，薄膜叠层可被进一步修改以包括在反射层12上或下的Al2O3层。该实施例示于图6中，其中可以看到薄膜叠层60包括衬底62，电极64，第一Al2O3层66，SiO2透明层68和第二Al2O3层70。
图7示出IMOD装置10的透明层14的滞后曲线80，该IMOD装置10具有示于图6中的薄膜叠层60。如可看到的那样，滞后窗口现在更宽，即4.5伏特，其是Vactuation(9伏特)和Vrelease(4.5伏特)之间的差。
然而，可使用具有高电荷密度的其它材料。这些材料包括AlOx，其是偏离化学计量形式的Al2O3、偏离化学计量形式氮化硅(Si3N4)、偏离化学计量形式的(SiNx)、偏离化学计量形式的五氧化二钽(Ta2O5)及偏离化学计量形式的(TaOx)。所有这些材料具有比SiO2高几个数量级的电荷捕获密度，并倾向于捕获任一种极性的电荷。与SiO2相比，因为这些材料具有高电荷捕获密度，其相对容易让电荷进出这些材料，SiO2具有低电荷捕获密度并且仅具有用于捕获负电荷的亲合势(affinity)。
具有高电荷捕获密度的材料的其它例子包括稀土金属氧化物(如，氧化铪)，和聚合物材料。进一步，经搀杂以捕获负或正电荷的半导体材料也可用来形成另外的层在SiO2透明层12之上，和可选地在SiO2透明层12之下。
至此，已经描述了用于操纵MEMS装置的机电行为的方法，其中在MEMS装置中累积的电荷是通过使用电荷捕获层而控制的，该电荷捕获层具有高电荷捕获密度。然而，将会理解本发明涵盖任何电荷捕获层的使用以改变或控制MEMS装置的机电行为，而无论其中的电荷捕获密度的大小。自然地，电荷捕获层的选择将由所需的MEMS装置的机电行为决定，而无论其电荷捕获密度的高，低，或适中等。
在某些实施例中，金属的使用，以薄层或聚集的形式，提供用于操纵MEMS装置中主膜的电荷捕获密度的另一种机制。通过制造空穴或产生偏差或其材料特征的周期性而构建主膜也可以用来改变电荷捕获特征。
根据本发明的另一个实施例，IMOD装置10包括化学阻挡层，其沉积于反射层12上，以便保护反射层12免受由于暴露至微制造工艺中化学蚀刻剂而造成的损坏或退化。例如，在一个实施例中，包括SiO2的透明层12是由其上的包括Al2O3的覆盖层保护的，该覆盖层用作如XeF2蚀刻剂的化学阻挡层。在这样的实施例中，已经发现当透明SiO2层12被保护免受蚀刻剂的损伤时，SiO2中的不一致性和机电行为中伴随的不一致性被消除，因此使每个IMOD装置10中的透明层14显示滞后。
图8a和图8b示出MEMS装置中另一个应用，其中电荷捕获层用来控制MEMS装置中结构的电磁行为。
参考图8a，附图标记90总体表示部分静电流流动系统。该静电流流动系统包括衬底92，其中形成有一般为U形的沟道94。沟道94包括第一材料的内层96，该第一材料是这样选择的，例如，根据其化学和机械特性，例如，该材料是耐磨损的，并且由于沟道内流动有流体，因此其具有小的退化趋势。该沟道94也包括外部层98，其是由于其电荷捕获特性而选择的，这将在下面更详细地解释。
静电流流动系统90也包括成对的电极100和102，其被选择性地激励或通电以引起电荷粒子在沟道94内的流体中沿图8b中的箭头104指示的方向偏移。在一个实施例中，外层98捕获流动中的电荷从而提供对系统101中流体流动的更强的控制。在另一个实施例中，层98也可捕获电荷以便消除或减少滞后效应。
现参考图9，图9示出了使用电荷捕获层以改变所示的MEMS装置中结构的机电行为的另一个应用。在图9中，附图标记120总体指示包括转子122的马达，转子122轴向与定子124对齐并与其隔开。如看到的那样，定子124形成于衬底126上，并包括电极128，其在使用中被驱动机构(未示出)通电或激励。转子122包括圆柱形部分130，其和中轴132一样快。转子122可以是一种材料，该材料是根据其机械特性包括耐磨损性而选择的，但可能有响应输入的不需要的电气特性，如当电极128被通电或激励以引起转子122旋转时。为了补偿这些不需要的电气特性，层134和136沉积于转子122上，以便有效地用作电荷捕获层以改变转子122的机电行为。
虽然本发明是参考特定的示例性实施例进行说明的，显然可以对这些实施例做不同的修改和变化，而不偏离所附权利要求所提出的更广泛的精神。因此，说明书和附图被看作是说明性的而非限制性的。
Claims (21)
1.一种用于制造微机电系统装置的方法，该方法包括：
制造第一层，其包括具有特征机电响应和特征光学响应的至少一种膜，其中所述特征光学响应是需要的，而所述特征机电响应是不需要的；以及
通过控制在所述微机电系统装置驱动过程中所述第一层上电荷的累积而修改所述第一层的所述特征机电响应。
2.如权利要求1所述的方法，其中控制电荷累积包括，制造至少一层第二层在所述第一层上或附近，所述第二层具有捕获电荷的材料。
3.如权利要求2所述的方法，其中制造所述至少一层第二层包括制造两层第二层，以便所述第一层被夹在所述两层第二层之间。
4.如权利要求1所述的方法，其中所述第一层包括SiO2而所述第二层包括Al2O3。
5.如权利要求1所述的方法，进一步包括，制造可偏移层，其可从未驱动状态静电偏移至驱动状态，在该未驱动状态，其与所述第一层通过间隙隔开，在该驱动状态，所述间隙至少部分地减小，其中所需的偏移所述可偏移层至其驱动状态的驱动电压大于所需的保持所述可偏移层于其驱动状态的偏压。
6.一种微机电系统装置，其包括：
第一层；和
至少一层第二层，该至少一层第二层在所述第一层上或附近，其中每层第二层具有的材料具有电荷捕获密度，以操纵累积于所述第一层上的电荷。
7.如权利要求6所述的微机电系统装置，其中每层第二层具有的所述电荷捕获密度使其可以用作电荷陷阱以至少减少在所述第一层上累积的电荷。
8.如权利要求6所述的微机电系统装置，其包括两层第二层，所述两层第二层设置成将所述第一层置于其间。
9.如权利要求6所述的微机电系统装置，其中所述第一层包括SiO2，而所述第二层包括Al2O3。
10.如权利要求9所述的微机电系统装置，其中所述第一层和第二层定义膜叠层，且所述装置进一步包括可偏移层，该可偏移层可从未驱动状态静电偏移至驱动状态，在该未驱动状态，其与所述膜叠层通过间隙隔开，在该驱动状态，所述间隙至少部分地减小，其中所需的偏移所述可偏移层至其驱动状态的驱动电压大于所需的保持所述可偏移层于其驱动状态的偏压。
11.如权利要求10所述的微机电系统装置，其中所述膜叠层和所述可偏移层定义干涉调制器中的元件。
12.如权利要求6所述的微机电系统装置，其中所述至少一层第二层用作阻挡层以保护所述第一层免受蚀刻剂的损伤。
13.一种微机电系统装置，其包括：
包括SiO2的层；和
包括Al2O3的至少一个层，其在包括SiO2的层上或附近。
14.如权利要求13所述的微机电系统装置，其包括两层Al2O3，所述两层Al2O3设置成可以将包括SiO2的层置于其间。
15.一种微机电系统装置，其包括：
多个部件，每个部件包括可在未驱动状态和驱动状态之间静电偏移的元件；以及
驱动机构，其施加驱动电压至每个部件以将其各个元件从未驱动状态偏移至驱动状态，并施加偏压至每个部件以保持各个元件处于驱动状态，其中所述驱动电压大于所述偏压。
16.如权利要求15所述的微机电系统装置，其中每个部件包括定义为[Vactuation-Vrelease]×100的至少20％的滞后窗口，其中Vactuation是驱动电压，而Vrelease是释放电压，在Vrelease时所述可偏移层返回至其未驱动状态。
17.如权利要求15所述的微机电系统装置，其中所述多个部件中的每个部件都定义一干涉调制器，所述干涉调制器可操作以反射一定波长的光。
18.一种微机电系统装置，其包括：
多个干涉调制器，每个干涉调制器包括反射层和透明层，该透明层一般与所述反射层以一定的间隙隔开，这对应于干涉调制器的未驱动状态，所述反射层可被静电向所述透明层驱动以至少降低所述间隙的高度，这对应于所述干涉调制器的驱动状态；以及
驱动机构，其驱动每个干涉调制器至其驱动状态，其中所需的驱动每个透明层至其驱动状态的驱动电压大于保持每个透明层处于其驱动状态所需的偏压。
19.如权利要求18所述的微机电系统装置，其中每个干涉调制器包括电荷捕获层，该电荷捕获层被设置在所述透明层和所述反射层之间。
20.如权利要求18所述的微机电系统装置，其中每个干涉调制器包括两层电荷捕获层，所述电荷捕获层被设置成可以将所述反射层置于其间。
21.如权利要求18所述的干涉调制器，其中所述透明层包括SiO2而所述电荷捕获层包括Al2O3。
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| US10/251,196 US7550794B2 (en) | 2002-09-20 | 2002-09-20 | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
| US10/251,196 | 2002-09-20 | ||
| PCT/US2003/030016 WO2004026757A2 (en) | 2002-09-20 | 2003-09-18 | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
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| CN1723571A true CN1723571A (zh) | 2006-01-18 |
| CN1723571B CN1723571B (zh) | 2012-06-20 |
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| JP (1) | JP4800619B2 (zh) |
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2002
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2003
- 2003-09-18 KR KR1020117009971A patent/KR101117059B1/ko not_active IP Right Cessation
- 2003-09-18 WO PCT/US2003/030016 patent/WO2004026757A2/en active Application Filing
- 2003-09-18 MX MXPA05003078A patent/MXPA05003078A/es active IP Right Grant
- 2003-09-18 RU RU2005111765/28A patent/RU2348088C2/ru not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| US20040058532A1 (en) | 2004-03-25 |
| AU2003275194A1 (en) | 2004-04-08 |
| US20090323168A1 (en) | 2009-12-31 |
| EP1540738A2 (en) | 2005-06-15 |
| HK1085305A1 (en) | 2006-08-18 |
| KR101060544B1 (ko) | 2011-08-30 |
| KR101117059B1 (ko) | 2012-02-29 |
| CN1723571B (zh) | 2012-06-20 |
| KR20050046796A (ko) | 2005-05-18 |
| US8368124B2 (en) | 2013-02-05 |
| TWI289538B (en) | 2007-11-11 |
| US7550794B2 (en) | 2009-06-23 |
| KR20110054075A (ko) | 2011-05-24 |
| MXPA05003078A (es) | 2005-11-17 |
| RU2348088C2 (ru) | 2009-02-27 |
| WO2004026757A3 (en) | 2004-06-24 |
| BR0314604A (pt) | 2005-07-26 |
| JP4800619B2 (ja) | 2011-10-26 |
| EP1540738A4 (en) | 2010-11-17 |
| JP2006500231A (ja) | 2006-01-05 |
| CA2499208C (en) | 2013-07-30 |
| CA2499208A1 (en) | 2004-04-01 |
| ES2523980T3 (es) | 2014-12-03 |
| WO2004026757A2 (en) | 2004-04-01 |
| EP1540738B1 (en) | 2014-09-17 |
| RU2005111765A (ru) | 2006-01-20 |
| TW200404736A (en) | 2004-04-01 |
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