CN1675763A - 使用碳纳米管和cvd增加热界面的导热率 - Google Patents

使用碳纳米管和cvd增加热界面的导热率 Download PDF

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CN1675763A
CN1675763A CN03818825.2A CN03818825A CN1675763A CN 1675763 A CN1675763 A CN 1675763A CN 03818825 A CN03818825 A CN 03818825A CN 1675763 A CN1675763 A CN 1675763A
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vapour deposition
chemical vapour
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戴维·德洛伦佐
斯蒂芬·蒙哥马利
罗伯特·法特
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Abstract

本发明涉及形成集成电路封装的结构和方法，所述封装使用了热界面材料层，所述热界面材料层具有附着到所述层表面的定向排列碳纳米管阵列。所述热界面材料是通过化学气相沉积法沉积的金刚石。碳纳米管通过等离子放电方法形成在CVDD表面上，并且还可以形成在管芯的表面上。

Description

使用碳纳米管和CVD增加热界面的导热率
一种集成电路封装，通过在热管理装置(thermal management solution)(比如，热散器(heat spreader)或散热器(heat sink))上形成化学气相沉积的金刚石表面以及在CVDD层或电路管芯表面上生长碳纳米管阵列，为电路管芯和热管理装置之间的热界面提供增大的导热率。
附图说明
为了得到本发明的实施方案的实现方式，将参考本发明特定的实施方案对上面简述的本发明提供更加具体的说明，这些特定的实施方案在附图中进行了图示说明。应当理解的是，这些图像所描述的仅仅是本发明典型的实施方案，这些实施方案不一定是按比例绘制的，并且不应因此被认为是对本发明范围的限制，通过使用附图，对本发明进行更详细及更明确的说明和解释，其中：
图1是冷却装置的现有技术堆叠的示意图的正面剖视图，该冷却装置用于集成电路封装；
图2是CVDD增强的现有技术堆叠的正面剖视图；
图3是图2中所描述的CVDD增强的现有技术堆叠的正面剖视图的局部详图，示出了位于所述CVDD层和所述管芯之间的热界面材料；
图4是本发明实施方案的正面剖视图的局部详图，其中CVDD增强的堆叠利用了在所述管芯表面上生长的纳米管；
图5是CVDD增强的堆叠的正面剖视图的局部详图，示出了在所述管芯表面和所述CVDD层上生长的纳米管；
图6是CVDD增强的堆叠的正面剖视图的局部详图，示出了在所述集成热散器的CVDD层上生长的纳米管；
图7是用于将电路管芯耦合到热管理辅助设备(thermal management aid)的方法的流程图；以及
图8是用于将电路管芯耦合到热管理辅助设备的另一种方法的流程图。
具体实施方式
本发明涉及形成集成电路封装的结构和方法，所述的封装利用了热界面材料层，该热界面材料层具有从其表面突出的定向排列的(aligned)碳纳米管阵列。
为了冷却比如电子管芯的电子封装，裸的硅管芯被集成热散器所覆盖，所述集成热散器是由热传导材料(比如，铜)形成的，并且所述集成热散器可以横向分散由所述管芯上的热点所产生的热载荷，这些热点例如对应于具有最高晶体管活动的区域。
在图1中，示出了具有插入构件(interposer)或基底(substrate)12的集成电路封装10，管芯14在基底12上邻近基底12放置并且通过焊球16热耦合到基底12上，焊球16被结合到管芯14邻近基底12的表面。在相邻焊球16之间以及在管芯14的表面与基底12之间的空间通常填充有导热凝胶体(gel)18。焊球16和导热凝胶体18的导热率的组合为管芯14所产生的部分热量提供了冷却路径。
如图1和图2所示，铜集成热散器20被放置到邻近管芯14的另一个表面，该表面与紧邻基底12的管芯14的表面是相对的。在现有技术的封装(比如图1和图2所示的封装)中，热散器20的内表面22通过第一热界面材料层24被耦合到管芯14的表面，所述第一热界面材料层24是热传导材料，比如热脂(thermal grease)或某种类似的材料。最终，热散器20通过第二热界面28与铜散热器(heat sink)26热接触。环境空气30流经散热器26以对其进行冷却。
在现有技术中，已经众所周知的是，在管芯和集成热散器20之间提供化学气相沉积的金刚石(chemical vapor deposited diamond)(CVDD)层32来提高热散器20或硅管芯14的横向导热率。如图2和图3所示，CVDD层32被施加到集成热散器20的内表面22上。
集成热散器的铜的导热率大约是395W/mK，而硅管芯的导热率大约是100W/mK。CVDD层的导热率预期超过1000W/mK。已经通过模拟发现，以总的结面至环境(junction-to-ambient)热阻的下降来测量，厚度大约为450微米的CVDD层能够提供这样的热效益，即是施加到集成热散器的CVDD层总值的约10％，是施加到管芯的CVDD层总值的20％，以及是在管芯和集成热散器二者上的组合CVDD层的约30％。
利用施加到管芯和热散器上的CVDD层所呈现的困难之一就是未抛光的沉积金刚石表面34所固有的粗糙度，这可以由凹凸不平36或突出来表征，这些凹凸比平或突出具有以微米计的尺寸。虽然可以通过在CVD处理之后进行抛光操作来略微减小粗糙度，但是这样的抛光操作预期将构成产品制造成本的一个主要部分，特别是因为CVDD处理本身的成本下降了。遗憾的是，而且看起来真实的情况是，尽管增加CVDD层厚度提高了这些层的热效率，但是CVDD层的粗糙度随着CVDD层的厚度增加而增加。在现有技术中，调节管芯14不平坦的表面或集成热散器20的内表面22以及CVDD层的缺乏平滑性，无论它被施加到管芯或整体热散器；填隙热界面材料38被插入到二者之间。
无论纳米管是单壁的还是双壁的，向热界面添加定向排列的纳米管增加了管芯和整体热散器之间的导热率，同时允许从CVDD方法中排除抛光步骤。下面基于向管芯和集成热散器之间的热界面添加纳米管，描述了热处理装置(thermal solutions)的实施方案。
图4示出了本发明的一个实施方案，其中单壁或双壁的碳纳米管40通过本领域中可以采用的等离子放电沉积方法生长在管芯14上。一旦纳米管40生长在管芯14的表面，阵列中的纳米管的一端牢固地附着于管芯14。在这个实施方案中，与典型的导热率约为1-7W/mK的热脂热界面材料相比，纳米管40的导热率在约1000到6000W/mK的范围内。在所示出的实施方案中，纳米管的长度通常是约100微米或更少，使得该层的热阻可以被忽略不计。在管芯14表而生长纳米管40填充了表面粗糙的凹陷，从而提供近乎一致的界面层。有限地挤压(crush)纳米管40使得在管芯14的表面和热散器20内表面22上的CVDD涂层32之间具有优异的热连接。在一个实施方案中，热脂可以被施加到纳米管40的阵列。在另一个实施方案中，没有使用热脂。在又一个实施方案中，CVDD涂层32可以形成在散热器26而非热散器20的表面上。
图5图示了本发明另一个实施方案，其中，所述结构具有纳米管40，这些纳米管40是使用等离子放电方法从热散器20的CVDD表面和管芯14的表面上生长的。在这个实施方案中，从相对的表面生长并且附着的纳米管40在所述表面配合时相互啮合(intermesh)，从而提供优良的热界面，即使没有使用热脂38。在另一个实施方案中，热脂38可以结合碳纳米管40使用。
图6示出了本发明的实施方案，其中使用等离子放电方法，单壁或双壁的碳纳米管40生长在集成热散器20的CVDD层32上并附着于其上。同样，所生长的纳米管40填充在表面粗糙的凹陷和凹凸不平36中，并对它们进行抵消。突出的纳米管40易于被有限地挤压到管芯14的峰粗糙特征42中。同样，在一个实施方案中，脂38不是形成热界面所必须的。在另一个实施方案中，热脂38与所述纳米管40结合。
图7是本发明方法的实施方案的流程图，该方法用于增强从电路管芯到热管理辅助设备(比如，热散器或散热器)的热流动。该方法的第一阶段72是在热管理辅助设备的表面上形成CVDD层。在形成CVDD层之后，在更进一步的阶段74基本定向排列的纳米管阵列被生长在电路管芯的一个表面上或在热管理辅助设备上的CVDD层上。在阶段76中，热管理辅助设备被安装到管芯，其中纳米管层将电路管芯的表面热耦合到热管理辅助设备的CVDD层。
图8是本发明方法的另一个实施方案的流程图，该方法将电路管芯热耦合到热管理辅助设备(比如，热散器或散热器)。在起始的阶段82，在热管理辅助设备上形成CVDD层。在阶段84，纳米管层被生长在CVDD层上。在阶段86中，热管理辅助设备被安装到管芯上，其中纳米管层将管芯的表面热耦合到热管理辅助设备的CVDD层。
对于本领域普通技术人员将容易理解到，在不背离于随后所附的权利要求书中所表述的本发明的范围和原则的情况下，可以对细节、材料和各个部件的布置以及方法的阶段进行各种改变，所述细节、材料和各个部件的布置以及方法的阶段进行各种改变都已经被说明和图示以解释本发明的本质。

Claims (23)

1.一种用于冷却电路管芯的装置，包括：
具有化学气相沉积金刚石表面的热管理辅助设备，以及
基本定向排列的碳纳米管的阵列，所述碳纳米管的阵列将所述电路管芯的表面耦合到所述热管理辅助设备的所述化学气相沉积金刚石表面，所述纳米管阵列被附着到所述管芯的表面或所述热管理辅助设备的化学气相沉积金刚石表面。
2.如权利要求1的装置，其中所述碳纳米管阵列的碳纳米管主要被附着到所述热管理辅助设备的化学气相沉积金刚石层。
3.如权利要求1的装置，其中所述碳纳米管阵列的碳纳米管主要被附着到所述电路管芯的表面。
4.如权利要求1的装置，其中所述碳纳米管阵列的碳纳米管被附着到所述电路管芯的表面和所述热管理辅助设备的化学气相沉积金刚石表面。
5.如权利要求1的装置，其中所述热管理辅助设备是集成热散器。
6.如权利要求1的装置，其中所述热管理辅助设备是散热器。
7.如权利要求1的装置，其中所述基本定向排列的碳纳米管阵列也包括热界面材料。
8.如权利要求7的装置，其中所述热界面材料包括导热脂。
9.一种用于冷却电路管芯的装置，包括：
具有化学气相沉积金刚石表面的热管理辅助设备，以及
基本定向排列的碳纳米管的阵列，所述碳纳米管的阵列将所述电路管芯的表面耦合到所述热管理辅助设备的所述化学气相沉积金刚石表面，所述纳米管阵列被附着到所述管芯的表面。
10.如权利要求9的装置，其中所述阵列也被附着到所述化学气相沉积金刚石表面。
11.如权利要求9的装置，其中所述阵列也包括导热脂。
12.一种用于冷却电路管芯的装置，包括：
具有化学气相沉积金刚石表面的热管理辅助设备，以及
基本定向排列的碳纳米管的阵列，所述碳纳米管的阵列将所述电路管芯的表面耦合到所述热管理辅助设备的化学气相沉积金刚石表面，所述纳米管阵列被附着到所述热管理辅助设备的化学气相沉积金刚石表面。
13.如权利要求12的装置，其中所述装置也包括导热脂。
14.如权利要求12的装置，其中所述阵列也被附着到所述管芯。
15.一种集成电路封装，包括：
基底；
安装在所述基底上的电路管芯；
散热器；
热耦合到所述散热器并具有化学气相沉积金刚石表面的热散器；以及
基本定向排列的碳纳米管的阵列，所述碳纳米管的阵列将所述电路管芯的表面耦合到所述热散器的化学气相沉积金刚石表面，所述纳米管阵列被附着到所述电路管芯的表面或所述热散器的化学气相沉积金刚石表面。
16.如权利要求15的集成电路封装，其中所述阵列被附着到所述电路管芯的表面和所述热散器的化学气相沉积金刚石表面。
17.如权利要求15的集成电路封装，其中所述阵列也包括热脂。
18.一种用于增强从电路管芯到热管理辅助设备传热的方法，包括：
在热管理辅助设备上形成化学气相沉积金刚石层；
在所述电路管芯的表面或化学气相沉积金刚石层之一上生长纳米管的阵列；以及
通过定向排列的纳米管层将所述热管理辅助设备安装到所述电路管芯，所述纳米管层将所述电路管芯的表面热耦合到所述热管理辅助设备的化学气相沉积金刚石层。
19.如权利要求18的方法，其中所述生长纳米管层的步骤包括通过等离子放电方法在所述管芯的表面上形成纳米管。
20.如权利要求18的方法，其中生长纳米管层的步骤包括通过等离子放电方法在所述化学气相沉积金刚石层形成所述纳米管。
21.一种用于将电路管芯热耦合到热管理辅助设备的方法，包括：
在热管理辅助设备上形成化学气相沉积金刚石层；
在所述化学气相沉积金刚石层上生长纳米管层；以及
通过所述纳米管层将所述热管理辅助设备安装到所述管芯，所述纳米管层将所述管芯的表面热耦合到所述热管理辅助设备的化学气相沉积金刚石层。
22.如权利要求21的方法，其中所述生长操作还包括向所述纳米管层添加热界面材料。
23.如权利要求21的方法，所述方法还包括在所述管芯的表面上生长纳米管层，并且将所述热管理层安装到所述管芯的步骤还包括使所述纳米管层相互啮合。
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