CN1672241A - 集成驱动器工艺流程 - Google Patents

集成驱动器工艺流程 Download PDF

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CN1672241A
CN1672241A CNA038180308A CN03818030A CN1672241A CN 1672241 A CN1672241 A CN 1672241A CN A038180308 A CNA038180308 A CN A038180308A CN 03818030 A CN03818030 A CN 03818030A CN 1672241 A CN1672241 A CN 1672241A
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light modulator
diffractive light
fore
transistor
interconnector
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CN100423178C (zh
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J·A·亨特
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ECHELLE Inc
Silicon Light Machines Inc
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Abstract

一种集成器件包括：一个或多个器件驱动器和单片地耦合到所述一个或多个驱动器电路的衍射光调制器。所述一个或多个驱动器电路被配置成用于处理接收的控制信号和将处理的控制信号传送给所述衍射光调制器。一种制造所述集成器件的方法优选地包括制造多个晶体管的每一个的前端部分；绝缘所述多个晶体管的前端部分；制造一个衍射光调制器的一前端部分；绝缘所述衍射光调制器的所述前端部分；为所述多个晶体管制造内部连线；应用一敞口阵列掩模和湿式蚀刻以达到所述衍射光调制器；和制造所述衍射光调制器的一后端部分，从而单片地耦合所述衍射光调制器和所述多个晶体管。

Description

集成驱动器工艺流程
技术领域
本发明涉及一种光调制器和器件驱动器的集成方法和装置。更加具体地说，本发明用于在相同的芯片上对一衍射光栅和相关的器件驱动器进行单片集成。
背景技术
衍射光栅用于对入射光束进行调制。一个这样的衍射光栅是光栅光阀。器件驱动器对光栅光阀提供控制信号，该控制信号指令光栅光阀对入射到其上的光束进行适当的调制。光栅光阀通过引线结合与所述器件相连接，其中每个引线结合与光栅光阀上的一个结合垫和所述器件驱动器上的一个相应结合垫相连接。如图1所示的传统光栅光阀组件包括一光栅光阀芯片10和四个单独的驱动器管芯12、14、16和18。每个驱动器管芯12、14、16和18通过多个引线结合11与光栅光阀芯片10相连接。光栅光阀按照其自身的工艺形成在硅上。光栅光阀包括可移动的元件同时每个元件与一个相应的结合垫相连接。光栅光阀本质上为无源器件，其中要向其施加电压以使所述元件移动。相反，器件驱动器是有源的。每个器件驱动器包括多个具有适当的内部连线层的晶体管。器件驱动器接收数字数据并将它转换成模拟电压形式的模拟响应。模拟电压然后被施加给适当的结合垫，然后通过光栅光阀上的相应元件接收该模拟电压。以这种方式，器件驱动器为光栅光阀提供了控制信号，从而指示各个元件移动。
在光调制器件领域，光栅光阀上的每个元件与光调制器件中的一个象素相对应。例如，在1088象素的情况下，需要1088个引线结合作为从器件驱动器到光栅光阀的输入。1088个引线结合在四个器件驱动器的每一个的输出侧需要272个结合垫。然而，可以使用标准半导体处理步骤非常容易地进行高密度布线，那么就可以进行引线结合。因为在每个器件驱动器的输入侧只需要60-70个引线垫，所以将有利地在相同的芯片上对器件驱动器和光栅光阀之间的连接进行内连线。以这种方式，将只需要具有60-70个引线结合作为对该集成芯片的输入，因此消除了传统的光栅光阀组件的附加的1088个引线结合。通过减少引线结合的数量，制造工艺变得更容易。此外，较少的引线结合降低了每个器件的封装成本。进一步，通过消除器件驱动器和光栅光阀之间的引线结合，先前其功能性和/或速度通过引线结合的寄生电容而受到限制的器件驱动器设计类型现在可被使用。
与这种大量引线结合相关联的还存在可靠性问题。因为存在与每个引线结合相关联的有限的故障率，所以引线结合越多，引线结合之一发生故障的机会就越大。减少引线结合的数量将必然减少故障引线结合的数量，并增加了器件的可靠性。
实际上，每个结合垫留有一个覆盖范围。这样，光栅光阀组件的尺寸在很大程度上就是由结合垫的总数确定的。如果减少结合垫的数量，则光栅光阀组件的尺寸也能被减小。因为所述器件受到接合垫的限制，所以有相当大量的地方浪费。因为该浪费的地方存在于可用于制造器件驱动器的硅上，所以可在当前正由接合垫所使用的地方上制造器件驱动器。
静电放电(ESD)保护通常被结合到从二极管到三级管和集成电路的有源器件中。在集成电路上制造晶体管过程中对垫片添加ESD保护结构是布局和设计的问题。该保护防止电路受到ESD损坏。然而，因为在光栅光阀芯片上没有有源器件，所以不存在ESD保护。因而，在光栅光阀制造过程中由于ESD引起的“断裂(snap-downs)”将损失大量的生产率。在断裂中，光栅光阀上的垫片用作天线和监视ESD事件。ESD事件被看作是由光栅光阀上的元件提供的电压使所述元件发生断裂由此破坏其自身。可有利的将ESD保护结合到光栅光阀的通常制造工艺中。
考虑到上述缺陷，将清楚如果通过光栅光阀将器件驱动器单片地集成到相同的硅上，那么这将产生一个很大的优点。
遗憾的是，器件驱动器和光栅光阀的制造工艺是不同的。此外，通过将器件驱动器和光栅光阀集成到相同的硅衬底上，将引入显著的制造问题。
下面说明关于图2和3的传统晶体管制造过程。图2表示在光栅光阀组件的器件驱动器中使用的典型晶体管。图2中所示的晶体管处于制造过程的初期，并且通常被称作晶体管的前端。在第一步中，在硅衬底20上生长二氧化硅膜22。接着，通过半导体制造工艺中所公知的制造工艺加入栅极24和源漏极26。下一步，如图3所示，在晶体管的前端上沉积氧化物层30。然后典型地通过化学机械抛光技术对氧化物层30进行平坦化处理。然后例如在氧化物层30中蚀刻用于达到栅极24和硅衬底20的接触孔。进行金属化过程用于对器件驱动器进行布线。金属化典型地是通过在氧化物层30上溅射一金属层进行的，对金属层进行图案化和蚀刻以形成触点。
然后另一个氧化物层36被沉积和平坦化。在氧化物层36中蚀刻用于达到触点32和34的接触孔。然后进行金属化过程以形成触点38和40。按照器件的设计考虑确定加入另外的氧化物层和金属层。典型地，存在3-5个用于形成各器件驱动器的内部连线的金属层。
下面参照图4-7说明传统的光栅光阀的制造过程。第一步，如图4所示，在硅衬底56上沉积绝缘层51之后，沉积牺牲层52和低应力氮化硅薄膜54。
在第二步，如图5所示，氮化硅薄膜54被光刻图案化成细长元件58形式的光栅元件的格栅。在此光刻图案化处理之后，外围氮化硅构架60保持在硅衬底56的上表面的整个外周边周围。在第二步的图案化处理之后，蚀刻牺牲层52，从而得到图6所示的结构。能够看出每个元件58现在形成一个独立式的氮化硅桥。如从图6还可以看出，牺牲层52在构架60下面未被整个蚀刻掉，所以构架60由该剩余部分的牺牲层52支撑在硅衬底56之上。
如图7所示，最后的制造步骤是溅射铝膜以增强元件58和衬底56的反射性，和提供一第一电极用于在所述元件和衬底之间施加电压。第二电极是通过将铝膜64溅射到硅衬底56的底部56上形成的。可选择地，所述第二电极可在沉积绝缘层51之前的步骤通过将铝膜溅射到硅衬底56的上部分上更早地引入该过程中。
在图8和9中，说明了传统的光栅光阀的一可选择实施例。在该实施例中，光栅光阀由多个等间隔的、等尺寸的、固定的元件72和多个等间隔的、等尺寸的、可移动的元件74组成，其中可移动元件74存在于固定的元件72之间的间隔中。每个固定的元件被一支撑材料体76支撑和保持在适当位置上，支撑材料体76延伸所述固定元件72的整个长度。所述材料体76是在光刻蚀刻过程中形成的，其中各支持材料体76之间的材料被除去。
问题是如何在与包括器件驱动器的晶体管相同的芯片上制造光栅光阀。使用传统的制造工艺步骤将光栅光阀和其相关的器件驱动器结合到单片集成器件中将是有利的。
发明内容
本发明包括一制造集成器件的方法的实施例。所述方法优选地包括：制造多个晶体管的每一个的前端部分；绝缘所述多个晶体管的前端部分；制造一个衍射光调制器的一前端部分；绝缘所述衍射光调制器的所述前端部分；为所述多个晶体管制造内部连线；应用一敞口阵列掩模和湿式蚀刻以达到所述衍射光调制器；制造所述衍射光调制器的一后端部分，由此单片地耦合所述衍射光调制器和所述多个晶体管。所述多个晶体管及其相关的内部连线可形成一个或多个器件驱动器，其被配置成用于处理接收的控制信号和将处理的控制信号传送给所述衍射光调制器。制造所述衍射光调制器的前端部分和为所述多个晶体管制造前端部分可使用高温处理步骤来进行。制造内部连线和制造所述衍射光调制器的后端部分可使用低温处理步骤来进行。绝缘所述多个晶体管的前端部分可包括：在所述多个晶体管的前端部分上沉积一氧化物层；和对所述氧化物层进行平坦化。绝缘所述衍射光调制器的前端部分可包括：在所述衍射光调制器的前端部分上沉积一氧化物层；和对所述氧化物层进行平坦化。
制造内部连线的步骤可包括制造一个或多个金属层。所述优选的方法还可进一步包括在每个金属层被制造之后从所述衍射光调制器的上部除去金属。通过过蚀刻从所述衍射光调制器上面除去每个金属层，并且在所述衍射光调制器的前端部分上沉积的氧化物层足够厚以便允许在没有损坏衍射光调制器的前端部分的情况下进行过蚀刻。所述多个晶体管的内部连线可包括与所述多个晶体管的每一个的触点。所述触点可包括一最大纵横比，最大纵横比限制所述多个晶体管的前端部分上的氧化物层和所述衍射光调制器的前端部分上的氧化物层的最大结合厚度。所述衍射光调制器和所述多个晶体管被单片地耦合以将控制信号从所述多个晶体管传送至所述衍射光调制器，使得所述衍射光调制器响应所述控制信号对入射光束进行调制。湿式蚀刻优选地包括大约10∶1的缓冲氧化物湿式蚀刻，以对所述衍射光调制器上方的层进行选择蚀刻。
本发明包括一集成器件的实施例。所述集成器件包括：一个或多个器件驱动器，和一与所述一个或多个驱动器电路单片地耦合的衍射光调制器。所述一个或多个驱动器电路优选地被配置成对接收的控制信号进行处理并将处理的控制信号传送给所述衍射光调制器。
附图的简略说明
图1表示一传统的部件结构，在该结构中一衍射光栅与分立的器件驱动器相连接；
图2表示一典型的没有内部连线的晶体管结构；
图3表示一典型的带有内部连线的晶体管结构；
图4-7为通过一硅衬底的剖面图，其示出了一传统的反射、可变形、衍射光栅的制造过程；
图8为与图7类似的剖面图，其示出了一传统的非衍射模式下的衍射光栅的一可选择实施例；
图9为图8中所示的衍射光栅的剖面图，其示出了衍射模式下的衍射光栅；
图10-14为通过一硅衬底的剖面图，其示出了根据本发明优选实施例的单片地集成器件的前端制造过程；
图15-20为与图10-14类似的剖面图，其示出了根据本发明优选实施例的单片地集成器件的后端制造过程。
具体实施方式
在图10-20中示出了根据本发明的生产一单片集成衍射光栅和器件驱动器所需的制造步骤。特别的，所述制造过程开始于图10-14中所示的前端制造过程。所述制造过程完成于图15-20中所示的后端制造过程。前端制造过程包括制造晶体管的前端，以及制造所述衍射光栅的前端，所述制造晶体管前端的步骤形成所述器件驱动器。晶体管前端和衍射光栅的前端的制造过程是使用高温处理步骤进行的。后端制造过程包括晶体管内部连线的金属化过程和衍射光栅的金属化过程。金属化是使用低温处理步骤进行的。与单片集成器件的制造过程相关联的总热量预算必须要考虑到与每个高温处理步骤以及每个低温处理步骤相关联的热量预算。
如图10所示，前端制造过程中的第一步是制造一传统的MOS晶体管100的前端。MOS晶体管100可以是P型晶体管或N型晶体管。晶体管100是使用与上面参照图2和3所述的那些步骤相似的传统制造步骤制造的。晶体管100包括在硅衬底102上制造的栅极98和源-漏极96。如图10-20中所示的晶体管100的结构仅仅是用于说明的目的，而不应限制本发明的范围。除了或代替晶体管100，可使用可选选择的传统晶体管结构。
在硅衬底102中制造晶体管100的前端之后的步骤是在晶体管100和硅衬底102上沉积氧化物层104。然后使氧化物层104平坦化，其中氧化物层104的厚度是足以用于适当平坦化的最小量。使氧化物层104和后来的氧化物层平坦化的优选方法是通过化学机械抛光(CMP)。可选择地，任何传统的平坦化方法都能使用。作为对氧化物层104进行沉积和平坦化的结果，晶体管100被密封在一保护氧化物层中。因为所述晶片在该步骤是平的，所以晶片将在要求的条件下开始制造光栅光阀的前端。相反，如果在首先没有用氧化物层104保护晶体管100的情况下而在晶体管布局上直接开始光栅光阀的制造，那么晶体管100将很有可能被损坏。即使晶体100未被损坏，则将出现相当大的处理难题。这些困难包括从各个晶体管元件的侧壁除去所述薄膜。从侧壁除去薄膜可导致等离子体损害、氧化物变粗糙、和其它有害影响。克服这些困难和其它困难增加了光栅光阀制造过程的复杂性。通过使保护氧化物层内的晶体管100绝缘，光栅光阀制造过程的潜在损害方面被消除了。
下一步骤是在氧化物层104上沉积掺杂多晶硅层，其后是在掺杂多晶硅上沉积绝缘层，典型的是氧化物。在图案化和蚀刻时，多晶硅层形成所述光栅光阀的一底部电极106，而绝缘层形成一蚀刻阻止层108，如图11所示。
如图12所示，下一步骤是沉积牺牲层110。然后图案化和蚀刻牺牲层，如图13所示。如图14所示，下一步骤是沉积氮化硅层112。所述氮化硅层112被光刻图案化成一光栅元件格栅，其形式取决于对入射到其上的光束进行要求的调制所需的特定光栅光阀的规格。图10-18表示光栅光阀的典型剖面图，更加具体地说，为光栅光阀的边缘部分的剖面图。应该清楚该剖面图仅仅是示例的，并用于帮助理解制造过程。在该光刻图案化处理之后，保留下来的氮化硅构架用作光栅光阀的一些或所有光栅元件的比较刚性的支撑结构。
下一步骤是沉积氧化物层114，然后其被平坦化。氧化物层114优选地通过CMP进行平坦化。作为对氧化物层114进行沉积和平坦化的结果，光栅光阀被嵌入到一保护氧化物层中。氧化物层114需要具有最小的厚度116以使得一随后的过蚀刻步骤能在没有损坏氮化硅层112的情况下得以进行。该过蚀刻步骤将在下面进行更加详细的说明。这就完成了前端制造过程。
如上所述，晶体管的前端制造过程和光栅光阀的前端制造过程是使用高温处理步骤进行的。优选地，在晶体管的前端中，在800-1200℃下生长二氧化硅，在550-650℃下进行栅的沉积，在800-1200℃下对源-漏极进行退火。退火温度是根据所述器件制造过程的总热量预算确定的。为了确定退火温度，与后端制造相关联的低温处理的热量预算和光栅光阀前端制造过程的热量预算被确定并从总热量预算中减去。其结果是前端晶体管热量预算。然后根据前端晶体管热量预算就可确定退火温度。在光栅光阀的前端中，掺杂多晶硅层的沉积是在550-650℃下进行的，并伴有800-1200℃的短退火，绝缘层的沉积是在800-1200℃下进行的，牺牲层的沉积是在550-650℃下进行的，氮化硅层的沉积是在700-900℃下进行的。前述每个温度范围都是近似值。前述每个沉积步骤优选地都是使用低压化学汽相沉积或LPCVD进行的。所述优选的温度范围是用于上述处理的推荐温度范围。应该理解也可使用其他过程来制造这种或其他种类的晶体管，其中所使用的其他过程已知能在不同的温度范围下实施。
如图15所示，后端制造过程中的第一步是图案化和蚀刻用于达到晶体管100的栅极98的接触孔118。接触孔118包括具有限定的最大值的纵横比，其是本领域公知的。最大纵横比限制了接触孔118的最大深度。当确定氧化物层104和氧化物层114的厚度时，是出于说明该最大深度的设计考虑，以使接触孔118的深度不会超过接触孔118的最大纵横比所允许的最大深度。在蚀刻接触孔118之后溅射金属层120。优选地，所述金属是铝，但也可使用其他导电金属。
如图16所示，下一步是图案化和蚀刻金属层120以形成与晶体管100互连的第一金属层。金属层120的蚀刻也需要从光栅光阀上面的区域除去金属。为了确保除去不是内部连线的所有金属层120，进行到氧化物层114中的过蚀刻。因此在光栅光阀上就需要最小氧化物厚度116的氧化物层114。氧化物厚度116用作在不损坏氮化硅层112的情况下允许对金属层120进行过蚀刻的缓冲区。应该清楚在进行了过蚀刻步骤之后，氧化物厚度116小于进行过蚀刻步骤之前的厚度。
如图17所示，下一步是沉积氧化物层122。然后对氧化物层122进行平坦化。氧化物层122优选的通过CMP进行平坦化。然后图案化和蚀刻用于达到金属内部连线120的接触孔。然后执行另一金属层的溅射，然后对该另一金属层进行图案化和过蚀刻以形成到晶体管100的内部连线的第二金属层124。如上所述，过蚀刻也从光栅光阀上的区域除去了金属层。在该第二金属层的制造步骤之后，通过重复下面的步骤来制造一第三金属层：沉积氧化物层(氧化物层126)、对所述氧化物层进行平坦化(优选地通过CMP)、图案化和蚀刻接触孔(以达到金属层124)、溅射金属层、图案化和过蚀刻所述金属层。以这种方式，第三金属层128被形成并且光栅光阀上面区域的金属被清除。金属层120、124和128在所述器件的表面和晶体管100的栅极98之间形成一内部连线。虽然图7所示的内部连线包括三个金属层，但本领域技术人员应该清楚一个内部连线根据需要可包括更多或更少的金属层。优选地，使用3-5个金属层来形成所述内部连线。这些金属化层是使用低温处理步骤制造的，其是本领域公知的。
当用于晶体管100的内部连线被完成时，光栅光阀之上的所有材料都将被除去。如图18所示，该步骤是通过应用称作敞口阵列掩模(open array mask)的掩模来实现的。在允许除去光栅光阀上面的材料的同时，所述敞口阵列掩模用于保护晶体管100和相关的内部连线。为了除去光栅光阀上面的材料，使用了湿式浸渍。优选地，湿式浸渍为缓冲氧化腐蚀剂(BOE)湿式蚀刻。更优选地，湿式浸泡为选择的10∶1BOE湿式蚀刻。可选择地，湿式浸泡可以是20∶1的BOE湿式蚀刻、50∶1的氢氟酸(HF)湿式蚀刻、垫式蚀刻或任何其他类似的基于氢氟酸的湿式氧化蚀刻化学。湿式浸渍允许进行选择蚀刻以除去光栅光阀上的区域130中的材料。当执行湿式浸渍时，区域130被清除并且所述光栅光阀是可达到的。
然后进行金属化以在光栅光阀上形成反射层以及在光栅光阀和晶体管100的内部连线之间提供金属路径。使用低温处理步骤来制造光栅光阀上的金属化层以及金属路径，所述步骤与用于形成晶体管100的金属层的低温处理步骤是一致的。在区域130被清除之后，通过在光栅光阀的的氮化硅层112上溅射、图案化和蚀刻一反射层130来进行光栅光阀的金属化过程，如图19所示。反射层130优选地为铝。然后，溅射、图案化和蚀刻一厚的金属层132以在光栅光阀的反射层和晶体管的内部连线之间形成所述金属路径。应该理解使光栅光阀和金属路径金属化的任何传统方法都能使用。
然后通过在穿过反射层130和氮化硅112的选择区域图案化和蚀刻肋口134来完成所述光栅光阀，其中XeF2被释放以除去牺牲层110。然后执行退火处理以完成本发明的单片集成器件。
在对光栅光阀进行金属化之外需要单独对晶体管进行金属化。这是由在应用敞口阵列掩模的同时使用的湿式浸渍的性质引起的。如上所述，湿式浸渍将光栅光阀之上的氧化物层向下蚀刻至一蚀刻阻止层，该蚀刻阻止层为氮化硅层112。使用上述的蚀刻化学之一，氧化物层对氮化硅的选择性是非常高的，大约为200比1。这在将氧化物层蚀刻至氮化硅层112中是非常有效的。然而，这些蚀刻化学也对金属进行很大程度的蚀刻，特别是对在光栅光阀上沉积的薄和高质量的金属。因此，有利地在对晶体管进行金属化的同时不对光栅光阀进行金属化。如果在应用敞口阵列掩模之前对光栅光阀进行金属化，那么蚀刻剂将蚀刻光栅光阀金属。相反，在形成晶体管内部连线之后，应用用于湿式浸渍的敞口阵列掩模以除去覆盖光栅光阀的前端的氧化物层，然后形成光栅光阀的反射层和金属路径。
已经对有关单个晶体管100说明了单片集成器件和与之相关的制造过程。该说明仅仅是用于说明的目的，应该清楚本发明的优选实施例包括多个晶体管和相关的内部连线。还应该清楚虽然将本发明描述为包括单个的到栅极98的内部连线，但按照器件的设计考虑的需要，也可以包括含有到所述多个晶体管的内部连线的另外的内部连线。例如，也可以包括到硅衬底的另外的内部连线。

Claims (20)

1.一种用于制造集成器件的方法，包括下述步骤：
a.制造多个晶体管的每一个的前端部分；
b.绝缘所述多个晶体管的前端部分；
c.制造一衍射光调制器的前端部分；
d.绝缘所述衍射光调制器的所述前端部分；
e.为所述多个晶体管制造内部连线；
f.应用一敞口阵列掩模和湿式蚀刻以达到所述衍射光调制器；
g.制造所述衍射光调制器的后端部分，由此单片地耦合所述衍射光调制器和所述多个晶体管。
2.根据权利要求1所述的方法，其中所述多个晶体管及其相关的内部连线形成一个或多个器件驱动器，该器件驱动器被配置成用于处理接收的控制信号和将处理的控制信号传送给所述衍射光调制器。
3.根据权利要求1所述的方法，其中制造所述衍射光调制器的前端部分和为所述多个晶体管制造前端部分是使用高温处理步骤来进行的。
4.根据权利要求1所述的方法，其中制造内部连线和制造所述衍射光调制器的后端部分是使用低温处理步骤来进行的。
5.根据权利要求1所述的方法，其中绝缘所述多个晶体管的前端部分包括：
a.在所述多个晶体管的前端部分上沉积一氧化物层；和
b.对所述氧化物层进行平坦化。
6.根据权利要求1所述的方法，其中绝缘所述衍射光调制器的前端部分包括：
a.在所述多个衍射光调制器的前端部分上沉积一氧化物层；和
b.对所述氧化物层进行平坦化。
7.根据权利要求6所述的方法，其中制造内部连线的步骤包括制造一个或多个金属层。
8.根据权利要求7所述的方法，进一步包括在每个金属层被制造之后从所述衍射光调制器的上方除去金属。
9.根据权利要求8所述的方法，其中通过过蚀刻从所述衍射光调制器上方除去每个金属层，并且在所述衍射光调制器的前端部分上沉积的氧化物层足够厚以便允许在不损坏衍射光调制器的前端部分的情况下进行过蚀刻。
10.根据权利要求1所述的方法，其中所述多个晶体管的内部连线包括到所述多个晶体管的每一个的触点，另外其中所述触点具有一最大纵横比，最大纵横比限制所述多个晶体管的前端部分上的氧化物层和所述衍射光调制器的前端部分上的氧化物层的最大结合厚度。
11.根据权利要求1所述的方法，其中所述衍射光调制器和所述多个晶体管被单片地耦合以将控制信号从所述多个晶体管传送至所述衍射光调制器，使得所述衍射光调制器响应所述控制信号对一入射光束进行调制。
12.根据权利要求1所述的方法，其中湿式蚀刻包括大约10∶1的缓冲氧化物湿式蚀刻，以对所述衍射光调制器上方的层进行选择蚀刻。
13.一种集成器件，包括：
a.用于进行高温处理步骤以在一衬底上制造多个晶体管的每一个的前端部分的装置；
b.用于绝缘所述多个晶体管的前端部分的装置；
c.用于进行高温处理步骤以制造耦合到所述衬底的一个衍射光调制器的前端部分的装置；
d.用于绝缘所述衍射光调制器的所述前端部分的装置；
e.用于进行低温处理步骤以制造一个或多个金属层的装置，所述金属层形成所述多个晶体管的内部连线，由此形成一个或多个驱动器器件；
f.用于应用一敞口阵列掩模和湿式蚀刻以除去所述衍射光调制器之上的层的装置；和
g.用于进行低温处理步骤以制造所述衍射光调制器的后端部分的装置，由此单片地耦合所述衍射光调制器和所述多个晶体管。
14.一种集成器件，包括：
a.一个或多个器件驱动器；和
b.与所述一个或多个驱动器电路单片地耦合的衍射光调制器，其中所述一个或多个驱动器电路被配置成将控制信号传送给所述衍射光调制器。
15.根据权利要求14所述的集成器件，其中所述衍射光调制器接收所述控制信号并响应于此对入射到所述衍射光调制器的光束进行调制。
16.根据权利要求14所述的集成器件，其中所述一个或多个器件驱动器包括多个晶体管和相关的内部连线。
17.根据权利要求16所述的集成器件，其中所述晶体管为MOS晶体管。
18.根据权利要求16所述的集成器件，其中所述多个晶体管中的每一个包括一前端部分，所述衍射光调制器包括一前端部分，从而通过一沉积的第一氧化物层将所述衍射光调制器的前端部分与所述多个晶体管的前端部分绝缘。
19.根据权利要求18所述的集成器件，其中所述多个晶体管中的每一个包括一含有内部连线的后端部分，所述衍射光调制器包括一含有内部连线的后端部分，从而通过相应的内部连线将所述衍射光调制器单片地耦合到所述一个或多个驱动器电路。
20.根据权利要求19所述的集成器件，其中所述晶体管内部连线包括一个或多个金属层，所述衍射光调制器的前端部分通过第二沉积氧化物层与所述一个或多个金属层绝缘，另外其中在制造所述晶体管内部连线的第一金属层时，通过过蚀刻从所述衍射光调制器上方的区域除去所述金属，并且所述衍射光调制器的前端部分上的第二沉积氧化物层足够厚以便允许在没有损坏所述衍射光调制器的前端部分的情况下进行过蚀刻。
CNB038180308A 2002-05-28 2003-05-14 集成驱动器工艺流程 Expired - Fee Related CN100423178C (zh)

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CN100423178C (zh) 2008-10-01

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