CN1624588B - Immersion lithographic system and method of manufacturing semiconductor device - Google Patents
Immersion lithographic system and method of manufacturing semiconductor device Download PDFInfo
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- CN1624588B CN1624588B CN 200410058067 CN200410058067A CN1624588B CN 1624588 B CN1624588 B CN 1624588B CN 200410058067 CN200410058067 CN 200410058067 CN 200410058067 A CN200410058067 A CN 200410058067A CN 1624588 B CN1624588 B CN 1624588B
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Abstract
The present invention provides an immersion lithographic system, a method for illuminating a semiconductor structure and a manufacturing method thereof. The immersion lithographic system comprises an optical surface, an immersion fluid containing at least a portion of the optical surface, and a semiconductor structure having a topmost photoresist layer having a thickness of less than about 5000 angstroms, wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illustrating a semiconductor structure having a topmost photoresist layer, comprising introducing an immersion fluid into a space between an optical surface and the photoresist layer, and directing light preferably with a wavelength of less than about 450 nm through the immersion fluid and onto the photoresist. The immersion lithographic system provided by the present invention can improve the resolution of the lithographic system, prevent the photoresist material from degradation caused by the immersion fluid, limit the amount of swelling of the photoresist, so as to improve the accuracy and yield of subsequent fabricating process.
Description
Technical field
The invention relates to a kind of system and method for making semiconductor element, particularly relevant for a kind of immersion lithography system that between optical mirror slip and substrate, imports immersion fluid.
Background technology
In gold-tinted photoetching technique system, in order to resolve the contour parsing pattern of point, line or image, the gold-tinted photoetching technique must have high resolving power.In the employed gold-tinted photoetching technique of integrated circuit (IC) industry system, the image light source is projected on one deck photoresistance the circuit diagram with the electronic unit that draws.Although the gold-tinted photoetching technique has been used many decades in the IC industry, industry still wishes to use it for the following manufacturing of 50 nanometers.Therefore, resolution how significantly to improve gold-tinted photolithographic fabrication technology has become and has made one of most important problem that high density, high-level efficiency semiconducter IC chip faced.
For etching system, its resolution R is by formula R=k
1λ/NA decision.Wherein, k
1Be lithographic constant, λ is the wavelength of image light source, and NA is a numerical aperture, is calculated by formula NA=nsin θ, and wherein θ is the half-open aperture at angle in the system, and n is the refractive index of the material between etching system and the base material.
Usually, there are three kinds of methods can be used for adjusting the etched resolution of photoetching, to improve photoetching technique.First method is the wavelength X that reduces the image light source.For example, use argon fluoride excimer laser (λ=193 nanometers) to replace G ray (λ=436 nanometers) with the reduction wavelength.Recently, the wavelength of image light source can taper to 157 nanometers, even is reduced to the wavelength of extreme ultraviolet (EUV).Second method is to reduce lithographic constant k
1Value, for example, use the irradiation of phase displacement light-cover and off-axis can be with k
1Value reduce to 0.4 by 0.6.The third method then is by improving the value that optical design, manufacturing technology and measure control promote numerical aperture NA.At present, the value of numerical aperture NA can increase to about 0.8 by 0.35.But the above-mentioned common method of resolution of improving is near physics and technological limit.For example, the value of NA (being nsin θ) is subjected to the restriction of n, if use is the optical system with free space (free space), then this moment, n equaled 1, and promptly the upper limit of NA is 1.
With respect to general photoetching technique, in recent years, liquid immersion lithography (immersionlithographic) technology has developed into the value that can allow further to increase NA (numerical aperture).In immersion lithography, base material is immersed in to have and carries out photolithographic fabrication under high refractive index liquid or the immersion fluid, fluid with high index of refraction (n＞1) can fill up the space (being filled by air originally) between outermost optical unit of etching system (for example lens) and the base material, therefore, utilize this kind method, lens can have the NA value greater than 1.PFPE (PFPE), cyclooctane, deionized water (DI-water) etc. have the fluid of high index of refraction, all can be used in the immersion lithography.Because the NA value has broken through original upper limit 1, therefore, compares with general photoetching technique, immersion lithography can provide more accurate photolithographic fabrication resolution.
The high-index fluid that is used for immersion lithography should satisfy following several requirements: this fluid must have low absorption coefficient for employed light with specific wavelength; This fluid must have the high refractive index of appropriateness to revise the refractive index of total system; This fluid must have compatibility and excellent contact chemically with the photoresistance on optical devices (camera lens) and the substrate.
Below summed up the file of relevant immersion lithography:
(1) publication number is the United States Patent (USP) Methods andapparatus employing an index matching medium of US 2002/0163629.
(2) patent No. is the United States Patent (USP) Method for opticalins pection and lithography of US 5900354.
(3) patent No. is the United States Patent (USP) Immersion typeprojection exposure apparatus of US 5610683.
(4) patent No. is the United States Patent (USP) Lithography system employing a solid immersion lens of US 5121256.
(5) J.A.Hoffnagle etc.Liquid?immersiondeep-ultraviolet?interferometric?lithography。J.VacuumScience?and?Technology?B，Vol.17，No.6，pp：3306-3309：1999。
(6) M.Switkes etc.Immersion?lithography?at?157nm。J.Vacuum?Science?and?Technology?B，Vol.19，No.6，pp：2353-2356，2000。
(7) patent No. is the United States Patent (USP) Photolithographicmethod for the manufacture of integrated circuits of US4346164.
(8) patent No. is the United States Patent (USP) Apparatus for thephotolithographic manufacture of integrated circuitelements of US4509852.
(9) patent No. is the United States Patent (USP) Pattern formingapparatus of US4480910.
(10) patent No. is the United States Patent (USP) Method for opticalinspection and lithography of US5900354.
(11) patent No. is the United States Patent (USP) Immersion typeprojection exposure apparatus of US5610683.
Because immersion lithography relates to photoresist is immersed in the immersion fluid, so the immersion fluid photoresist of should getting along well fully reacts or decomposes photoresist.Yet traditional immersion fluid but can or further decompose photoresist with the photoresist reaction.
In addition, in some traditional immersion lithography, some immersion fluids, for example water can permeate in the photoresist of institute's submergence, causes being immersed in the photoresist expansion in this immersion fluid and makes photoresistance thickness increase, and reduces the accuracy of follow-up manufacturing.
Therefore, studying better immersion lithography and method thereof, thereby limit the degree of photoresistance expansion and avoid photoresist to decompose, is problem that urgency is to be solved in the semiconductor technology.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of immersion lithography system that between optical mirror slip and substrate, imports immersion fluid, avoid photosensitive material to be submerged fluid breakup, the swell increment of restriction photosensitive material layer.
To achieve these goals, the invention provides a kind of immersion lithographic system, comprise: a wavelength is less than or equal to the image light source of 193 nanometers; Optics, this optics with an optical surface be disposed at described image light source below, make the rayed sent from the image light source and pass through this optics; A semiconductor element substrate, wherein the upper surface of this semiconductor element substrate has one deck photosensitive material layer, and the thickness of this photosensitive material layer is not more than
The illumination of passing through described optics is mapped on this semiconductor element substrate; And one deck immersion fluid is disposed between described photosensitive material layer and the optical surface, and wherein this immersion fluid contacts with the upper surface of photosensitive material layer and the lower surface of optical surface respectively.
According to immersion lithographic system of the present invention, described optical surface is to be mixed by in monox, molten silicon, the calcium fluoride one or more.
According to immersion lithographic system of the present invention, described photosensitive material layer comprises the chemical amplification type photoresistance.
According to immersion lithographic system of the present invention, described immersion fluid is to be mixed by in water, PFPE, the cyclooctane one or more.
According to immersion lithographic system of the present invention, this immersion lithographic system also comprises a supporting platform seat that is positioned at below the described semiconductor element substrate.
According to immersion lithographic system of the present invention, described supporting platform seat is immersed in the described immersion fluid.
Another object of the present invention is to provide a kind of irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer.
To achieve these goals, the invention provides a kind of irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer, comprise: a semiconductor element substrate is provided, and the upper surface of this semiconductor element substrate has one deck photosensitive material layer, and the thickness of this photosensitive material layer is not more than
One image light source is provided; One optics with optical surface is provided, this optics be disposed at this image light source below, the light that this image light source is sent passes through this optics; Between optical surface and described photosensitive material layer, import immersion fluid; And a branch of luminous energy bundle is provided, this luminous energy bundle directly passes described immersion fluid and shines on the described photosensitive material layer.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, described immersion fluid is to be mixed by in water, PFPE, the cyclooctane one or more.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, described optical surface comprises monox.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, described optical surface comprises calcium fluoride.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, the wavelength of described luminous energy bundle is less than 450 nanometers.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, described immersion fluid contacts with the described photosensitive material layer of part.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, described semiconductor element substrate is immersed in the described immersion fluid.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, described semiconductor element substrate is configured on the supporting platform seat.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, described supporting platform seat is immersed in the described immersion fluid.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, described irradiation method comprises develops to described photosensitive material layer.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, described photosensitive material layer is carried out step of developing comprise described photosensitive material layer is immersed in tetramethyl ammonium hydroxide solution.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention,, be formed with one deck barrier layer on the described photosensitive material layer providing the luminous energy bundle directly to pass before described immersion fluid shines described photosensitive material layer.
According to the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer of the present invention, described barrier layer comprises hydrophobic material.
Another purpose of the present invention is to provide a kind of immersion lithography that utilizes that the semiconductor structure that upper surface is covered with photosensitive material layer is implemented irradiation, thereby makes the method for semiconductor element.
To achieve these goals, the invention provides a kind of method of making semiconductor element, utilize immersion lithography that the semiconductor structure that upper surface is covered with photosensitive material layer is implemented irradiation, this method comprises: a semiconductor element substrate is provided; Form one deck photosensitive material layer on described semiconductor element substrate, wherein the thickness of this photosensitive material layer is not more than
One image light source is provided; One optics with optical surface is provided, this optics be disposed at this image light source below, the light that this image light source is sent passes through this optics; Between optical surface and described photosensitive material layer, import immersion fluid, and this immersion fluid contacts with described photosensitive material layer; Provide a branch of luminous energy bundle directly to pass described immersion fluid and expose to described photosensitive material laminar surface, the selectivity described photosensitive material that exposes; Remove the described photosensitive material layer of part, make described photosensitive material layer graphical; And utilize described graphical photosensitive material layer to carry out the manufacturing of semiconductor element as the cover curtain.
According to the method for manufacturing semiconductor element of the present invention, the wavelength of described luminous energy bundle is less than 450 nanometers.
According to the method for manufacturing semiconductor element of the present invention, described semiconductor element substrate is immersed in the described immersion fluid.
According to the method for manufacturing semiconductor element of the present invention, described semiconductor element substrate is disposed on the supporting platform seat.
According to the method for manufacturing semiconductor element of the present invention, described supporting platform seat is immersed in the described immersion fluid.
According to the method for manufacturing semiconductor element of the present invention, described irradiation method comprises develops to described photosensitive material layer.
According to the method for manufacturing semiconductor element of the present invention, described photosensitive material layer is carried out step of developing comprise described photosensitive material layer is immersed in tetramethyl ammonium hydroxide solution.
Method according to manufacturing semiconductor element of the present invention, before forming photosensitive material layer on the described semiconductor element substrate, on described semiconductor element substrate, form earlier the layer of material layer, and the described photosensitive material layer that forms of back is used for graphical described material layer.
According to the method for manufacturing semiconductor element of the present invention, described material layer is a conductive layer.
According to the method for manufacturing semiconductor element of the present invention, the step of utilizing described graphical photosensitive material layer to make semiconductor element as the cover curtain comprises, utilizes described graphical photosensitive material layer as covering the described conductive layer of curtain etching to form a gate.
According to the method for manufacturing semiconductor element of the present invention, described material layer is a dielectric layer.
Method according to manufacturing semiconductor element of the present invention, the step of utilizing described graphical photosensitive material layer to make semiconductor element as the cover curtain comprises, utilize described graphical photosensitive material layer as the described dielectric layer of cover curtain etching forming a groove, and fill up this groove with a conductive layer.
According to the method for manufacturing semiconductor element of the present invention,, be formed with one deck barrier layer on the described photosensitive material layer providing the luminous energy bundle directly to pass before described immersion fluid shines described photosensitive material layer.
According to the method for manufacturing semiconductor element of the present invention, the method that forms described barrier layer comprises the combination of described photosensitive material laminar surface being carried out plasma treatment, surface treatment, chemical treatment, ion implantation, thermal treatment or above-mentioned disposal route.
Immersion lithography provided by the invention, photosensitive material layer use is not influenced by immersion fluid and expand or barrier layer that expansion amplitude is very little, or has high osmosis or the less photosensitive material of thickness.Therefore, when photosensitive material layer was immersed in immersion fluid, photosensitive material layer can not expand or be expanded to maximal value rapidly, and thickness everywhere is consistent, thereby guarantee that photosensitive material layer exposes under same state, improved the accuracy and the yield rate of subsequent manufacturing processes.
Description of drawings
Fig. 1 is the synoptic diagram of immersion lithography system.
Fig. 2 a, 2b and 2c are the synoptic diagram that immersion fluid diffuses into photosensitive material layer.
Fig. 3 is the expanded thickness of photosensitive material layer and the relation curve of Immersion time.
Fig. 4 is each block on the semiconductor structure has different Immersion times in immersion fluid a synoptic diagram.
Fig. 5 is the relation curve of the degrees of expansion and the initial thickness of variety classes photosensitive material layer.
Fig. 6 covers one deck barrier layer to diffuse to the synoptic diagram of the immersion lithographic system of photosensitive material layer to prevent immersion fluid on photosensitive material layer.
Embodiment
Below be preferred embodiment of the present invention, be used for illustrating immersion lithographic system of the present invention and using method thereof.
Fig. 1 is the synoptic diagram of immersion lithography system 10.This immersion lithography system 10 comprises an image light source 20, a branch of luminous energy bundle 21 of this image light source 20 emissions, scioptics 22, shade 30, optical element module 40 and have the outermost layer lens 50 of an optical surface 51 successively.In a preferred embodiment, lens 50 are formed by monox (or other siliceous and material oxygen), molten silicon (fused silica) or calcium fluoride.In another preferred embodiment, the wavelength of image light source 20 to be to be good below 450 nanometers, especially smaller or equal to 193 nanometers, and for example 157 nanometers or 193 nanometers.
In immersion lithography system 10, the space between outermost layer lens 50 and the semiconductor substrate 80 is filled by immersion fluid 60.The upper surface of this semiconductor substrate 80 makes immersion fluid 60 directly contact with photosensitive material layer (photoresist layer) 70, as shown in Figure 1 by 70 coverings of one deck photosensitive material layer (or photoresistance).In addition, supporting platform seat 85 is used for support semiconductor substrate 80.
The preferable selection of immersion fluid 60 is the fluids that comprise water.For example, this fluid can be pure water or deionized water.In another embodiment of the present invention, this immersion fluid 60 can be cyclooctane or PFPE (PFPE), or with the mixed liquor of other fluid.
In addition, the positive photoresistance that this photosensitive material layer (photoresist layer) 70 can be made up of the dimeric molecule structure, this photoresist layer is dissolved in the developer solution after exposure, then is insoluble to developer solution without the part of exposure.Align photoresistance, the developer solution that is suitable for can be Tetramethylammonium hydroxide (TMAH) solution.
In a preferred embodiment, semiconductor element substrate 80 can be the semiconductor substrate that is formed with integrated circuit on it.For example, semiconductor element substrate 80 can be one and have transistorized crystal silicon substrate (for example, monocrystalline silicon substrate or silicon-coated insulated plate), and can be interconnected by metal level between each unit of semiconductor element substrate 80.
Fig. 2 a, 2b and 2c are the synoptic diagram that immersion fluid diffuses into photosensitive material layer 70.Shown in Fig. 2 a, immersion fluid 60 has a upper surface 61, and contacts with photosensitive material layer 70 by interface 71, and outermost layer lens 50 contact with immersion fluid 60 by optical surface 51.In preferred embodiment of the present invention, immersion fluid 60 is a water, but other also can be used as immersion fluid such as cyclooctane and PFPE (PFPE) and use in the present invention.The photosensitive material layer 70 that is formed on the semiconductor substrate 80 has an initial thickness d i.When exposing under the luminous energy of part photosensitive material layer 70 at doses, this photosensitive material layer 70 exposed areas can produce photocatalyst.This has the photosensitive material layer 70 that produces the photocatalyst ability can use chemical amplification type (CA) photoresistance, and it is widely used in the photoetching technique of 193 nanometers and 157 nano wave lengths.
Shown in Fig. 2 a, when immersion fluid 60 has just imported on the photosensitive material layer 70 (time is when equalling zero), the thickness of photosensitive material layer 70 is d
iWhen immersion fluid 60 diffused into photosensitive material layer 70 gradually, the speed that immersion fluid 60 diffuses into photosensitive material 70 depended on the kind of immersion fluid 60 and photosensitive material 70.
Shown in Fig. 2 b, when immersion fluid 60 diffuses into photosensitive material 70, can cause photosensitive material layer 70 to expand.In Fig. 2 b, the diffusion leading edge 75 of immersion fluid 60 is illustrated by the broken lines.This immersion fluid 60 diffuses into (shown in the diffusion leading edge 75 of Fig. 2 b) in the photosensitive material layer 70 gradually towards dispersal direction 79 (as shown by arrows), and photosensitive material layer 70 expands gradually, and thickness increases.Shown in Fig. 2 b, the thickness of photosensitive material layer 70 is from d originally
iExpand into d
2
When this immersion fluid 60 further diffuses into photosensitive material 70, can impel diffusion leading edge 75 to continue to move down, and along with photosensitive material layer 70 is immersed in the increase of the time of immersion fluid 60, more immersion fluid 60 diffuses to photosensitive material layer 70, thereby photosensitive material layer 70 is further expanded.Shown in Fig. 2 c, when diffusion leading edge 75 arrived interface between photosensitive material layer 70 and substrate 80, the expanded thickness of photosensitive material layer 70 reached maximal value d
f, at this moment photosensitive material layer 70 can't further expand.
In immersion lithographic system, the thickness of photosensitive material layer 70 thickens with the increase that it is immersed in the time of immersion fluid 60.The photosensitive material layer 70 of different-thickness (thicker photosensitive material layer 70a and thin photosensitive material 70b), its thickness be immersed in the immersion fluid time relation as shown in Figure 3.When Immersion time was zero, the initial thickness of photosensitive material was d
i, when immersion fluid 60 infiltered photosensitive material layer 70 very soon and diffuse to interface between photosensitive material layer 70 and the semiconductor substrate 80 down, its thickness was linear increase (expansion) in time.For example, when the interface between diffusion leading edge 75 arrival photosensitive material layers 70 and the substrate 80, its time, near 5 (random time units), this thicker photosensitive material 70a can reach final thickness d for thicker photosensitive material 70a
fIn Fig. 3, chronomere is an arbitrary unit.In the immersion lithographic system of reality, the chronomere among Fig. 3 is about 60 seconds.
Final thickness d
fWith initial thickness d
iDifference be the swell increment of photosensitive material layer 70.As shown in Figure 3, the swell increment of thicker photosensitive material layer 70a is also bigger.Therefore, thicker photosensitive material 70a is submerged fluid 60 infiltration and the problem that expands is also comparatively serious.In an embodiment of the present invention, the expansion of thin photosensitive material is less, and is expanded to final thickness d
fThe time of Shi Suoyong is also shorter, that is to say, thin photosensitive material layer 70b utilizes short Immersion time to arrive final thickness.Because immersion fluid 60 diffuses into the change that photosensitive material layer 70 can cause photosensitive material layer 70 character, so the initial thickness of photosensitive material layer 70 is thick more, is expanded to final thickness d
fRequired Immersion time is long more, and the change of photosensitive material layer 70 character is serious more.
As shown in Figure 4, semiconductor substrate (or wafer) 80 is divided into a plurality of blocks (blocks) 86 (for example chip region or chipset district 1 ' to 10 ') usually.In a preferred embodiment of the present invention, each block 86 comprises one or more integrated circuit.When forming integrated circuit diagram on semiconductor substrate 80, the photoetching technique system can carry out " exposure (step-and-expose) one by one " step usually within a certain period of time at block 86.For example, be labeled as 1 ' block and at first be exposed, etching system exposes to being labeled as 2 ' block then, and the rest may be inferred.Shown in the arrow of Fig. 4, " exposure one by one " step is carried out with grating scanning mode (raster scan manner) usually.When " exposure " one by one step application when immersion substrate (or wafer), being labeled as 1 ' block can be at very first time t
1Exposure, being labeled as 2 ' block can be at the second time t
2Exposure.And the above-mentioned practice means when a plurality of blocks 86 expose in regular turn, and the degrees of expansion of photosensitive material layer 70 has nothing in common with each other on each block 86.
In a preferred embodiment of the present invention, after each block 86 exposure, the photosensitive material layer 70 of all blocks 86 can expand into identical degree on the substrate 80.Can guarantee that like this photosensitive material layer 70 exposes under same state, thereby increase its consistance and improve yield rate.The present invention is used for guaranteeing that the photosensitive material 70 on all blocks 86 has the same expansion degree methods, is to use enough thin photosensitive material layer 70.As shown in Figure 3, the short time of 70 need of this thin photosensitive material one can reach final thickness d
f, and the swell increment of this photosensitive material is less.By using enough thin photosensitive material 70, even when first block 1 ' exposes on the substrate 80, the thickness before its exposure also can reach final thickness d
f
As shown in Figure 3, when photosensitive material layer 70a and 70b expand into final thickness, this final thickness d
fBe about initial thickness d
iTwice.As shown in Figure 5, the swell increment of thin photosensitive material layer 70b (is d
f-d
i) represent with " the first material M1 ".In another preferred embodiment of the present invention, a photosensitive material that is suitable for, its swell increment (d
f-d
i) less than the initial thickness d of this photosensitive material
iTherefore, form, can change or further reduce the last degree that expands by the polymkeric substance of adjusting photosensitive material 70.
As shown in Figure 5, at a fixing initial thickness d
iDown, the degrees of expansion of the second material M2 is littler than the first material M1, and the degrees of expansion of the 3rd material M3 is littler than the second material M2.In a preferred embodiment of the present invention, the swell increment (d of photosensitive material layer
f-d
i) be limited in approximately
In, so the depth of focus of photoetching technique system still is in the reasonable range.In preferred embodiment, the preferred values of the thickness of photosensitive material layer 70 be less than
Better value be less than
Optimum value be less than
The lightsensitivity (sensitivity) that comprises exposure (or photon) in the character of photosensitive material layer 70 to given dose, and the character of photosensitive material layer 70 can change along with entering of immersion fluid 60.Therefore, when immersion fluid 60 progresses into photosensitive material layer 70, the susceptibility of the 70 pairs of given doses of photosensitive material layer exposure can change (putting aside at this whether photosensitive material layer 70 influenced by immersion fluid 60 and expand) along with the increase of Immersion time in immersion fluid 60, when diffusing into photosensitive material layer 70 fully, immersion fluid 60 reaches capacity, at this moment, the susceptibility of photosensitive material layer 70 no longer changes with the increase of Immersion time.Therefore, the present invention uses thin photosensitive material layer, for example
Below, better value be less than
Optimum value then be less than
Like this, in a short period of time, the immersion fluid 60 that diffuses into photosensitive material layer 70 is a saturable, even just reaches capacity before first block, the 1 ' exposure of substrate 80.Because the susceptibility of photosensitive material layer 70 no longer changes on each block of saturated back, it is hereby ensured the consistance of each block 86 required exposure amount.After the photosensitive material on the block 86 70 is exposed, use developer solution, for example Tetramethylammonium hydroxide (TMAH) solution dissolves the part that photosensitive material 70 is exposed.
Shown in Figure 6 is the another kind of method that is used for reducing the photosensitive material layer expansion issues.This method is added one deck barrier layer 90 (barrierlayer) at the upper surface of photosensitive material layer 70.The effect of barrier layer 90 is that restriction immersion fluid 60 diffuses in the photosensitive material layer 70, and this barrier layer 90 can be a photochromics, also can be non-photosensitive materials.In a preferred embodiment of the present invention, barrier layer 90 comprises hydrophobic material, thereby makes it have hydrophobic surface, avoids excessive water (as immersion fluid 60) to infiltrate in the photosensitive material layer 70 via barrier layer 90.
In another preferred embodiment of the present invention, barrier layer 90 can self be formed by photosensitive material layer 70, for example photosensitive material layer 70 is handled or the surface of photosensitive material layer 70 is processed.Processing mode can be chemical treatment, as in plasma ambient, well-oxygenated environment or any other chemical environment being exposed in the surface of photosensitive material; Also can adopt ion implantation mode to handle; Can also be thermal treatment, under at inert environments, heat.Comprehensively above-mentioned, the purpose that forms barrier layer 90 is to be used for reducing the required thickness of photosensitive material, and then reduces degrees of expansion.
In addition, it should be noted that, immersion lithographic system of the present invention can also comprise other known practice that is applicable to immersion lithography, for example, immersion lithographic system can and be exposed between the wafer partly at the outermost layer lens and come submergence with immersion fluid, perhaps the full wafer wafer is immersed in the immersion fluid, perhaps whole base station all is immersed in the immersion fluid.
Immersion lithography of the present invention, making photosensitive material layer 70 consistent methods is to utilize to reach last expanded thickness d rapidly
fPhotoresist.When this photoresist is immersed in immersion fluid 60, can be expanded to maximal value at once, expose then.
From making photosensitive material layer 70 reach the angle of best uniform, the most suitable photosensitive material layer 70 should not be subjected to the influence of immersion fluid 60 and expand (or the amplitude that expands is very little), for example uses barrier layer; Perhaps, photosensitive material layer 70 should be able to be expanded to saturated under the influence of immersion fluid 60 very soon, for example uses to have high osmosis or the less photosensitive material of thickness.
Though the present invention by the preferred embodiment explanation as above, this preferred embodiment is not in order to limit the present invention.Those skilled in the art without departing from the spirit and scope of the present invention, should have the ability this preferred embodiment is made various changes and replenished, so protection scope of the present invention is as the criterion with the scope of claims.
Being simply described as follows of symbol in the accompanying drawing:
10: immersion lithography system 21: the luminous energy bundle
20: image light source 22: lens
30: shade 79: dispersal direction
40: optical element module 80: the semiconductor element substrate
51: optical surface 85: supporting platform seat
50: outermost layer lens 86: block
60: immersion fluid 90: barrier layer
61: the upper surface d of immersion fluid
i: initial thickness
70: photosensitive material d
2: thickness
70a: thicker photosensitive material d
f: final thickness
70b: thin photosensitive material M1: first material
71: interface M2: second material
75: diffusion leading edge M3: the 3rd material
Claims (33)
1. immersion lithographic system is characterized in that this immersion lithographic system comprises:
A wavelength is less than or equal to the image light source of 193 nanometers;
Optics, this optics with an optical surface be disposed at described image light source below, make the rayed sent from the image light source and pass through this optics;
A semiconductor element substrate, wherein the upper surface of this semiconductor element substrate has one deck photosensitive material layer, and the thickness of this photosensitive material layer is not more than
, the illumination of passing through described optics is mapped on this semiconductor element substrate; And
One deck immersion fluid is disposed between described photosensitive material layer and the optical surface, and wherein this immersion fluid contacts with the upper surface of photosensitive material layer and the lower surface of optical surface respectively.
2. immersion lithographic system according to claim 1 is characterized in that: described optical surface is to be mixed by in monox, molten silicon, the calcium fluoride one or more.
3. immersion lithographic system according to claim 1 is characterized in that: described photosensitive material layer comprises the chemical amplification type photoresistance.
4. immersion lithographic system according to claim 1 is characterized in that: described immersion fluid is to be mixed by in water, PFPE, the cyclooctane one or more.
5. immersion lithographic system according to claim 1 is characterized in that: this immersion lithographic system also comprises a supporting platform seat that is positioned at below the described semiconductor element substrate.
6. immersion lithographic system according to claim 5 is characterized in that: described supporting platform seat is immersed in the described immersion fluid.
7. irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer is characterized in that this irradiation method comprises:
A semiconductor element substrate is provided, and the upper surface of this semiconductor element substrate has one deck photosensitive material layer, and the thickness of this photosensitive material layer is not more than
One image light source is provided;
One optics with optical surface is provided, this optics be disposed at this image light source below, the light that this image light source is sent passes through this optics;
Between optical surface and described photosensitive material layer, import immersion fluid; And
A branch of luminous energy bundle is provided, and this luminous energy bundle directly passes described immersion fluid and shines on the described photosensitive material layer.
8. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 7 is characterized in that: described immersion fluid is to be mixed by in water, PFPE, the cyclooctane one or more.
9. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 7, it is characterized in that: described optical surface comprises monox.
10. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 7, it is characterized in that: described optical surface comprises calcium fluoride.
11. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 7, it is characterized in that: the wavelength of described luminous energy bundle is less than 450 nanometers.
12. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 7 is characterized in that: described immersion fluid contacts with the described photosensitive material layer of part.
13. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 7 is characterized in that: described semiconductor element substrate is immersed in the described immersion fluid.
14. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 7 is characterized in that: described semiconductor element substrate is configured on the supporting platform seat.
15. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 14, it is characterized in that: described supporting platform seat is immersed in the described immersion fluid.
16. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 7 is characterized in that: described irradiation method comprises develops to described photosensitive material layer.
17. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 16 is characterized in that: described photosensitive material layer is carried out step of developing comprise described photosensitive material layer is immersed in tetramethyl ammonium hydroxide solution.
18. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 7, it is characterized in that:, be formed with one deck barrier layer on the described photosensitive material layer providing the luminous energy bundle directly to pass before described immersion fluid shines described photosensitive material layer.
19. the irradiation method that upper surface is covered with the semiconductor structure of photosensitive material layer according to claim 18, it is characterized in that: described barrier layer comprises hydrophobic material.
20. a method of making semiconductor element utilizes immersion lithography that the semiconductor structure that upper surface is covered with photosensitive material layer is implemented irradiation, it is characterized in that this method comprises:
A semiconductor element substrate is provided;
Form one deck photosensitive material layer on described semiconductor element substrate, wherein the thickness of this photosensitive material layer is not more than
One image light source is provided;
One optics with optical surface is provided, this optics be disposed at this image light source below, the light that this image light source is sent passes through this optics;
Between optical surface and described photosensitive material layer, import immersion fluid, and this immersion fluid contacts with described photosensitive material layer;
Provide a branch of luminous energy bundle directly to pass described immersion fluid and expose to described photosensitive material laminar surface, the selectivity described photosensitive material that exposes;
Remove the described photosensitive material layer of part, make described photosensitive material layer graphical; And
Utilize described graphical photosensitive material layer to carry out the manufacturing of semiconductor element as the cover curtain.
21. the method for manufacturing semiconductor element according to claim 20 is characterized in that: the wavelength of described luminous energy bundle is less than 450 nanometers.
22. the method for manufacturing semiconductor element according to claim 20 is characterized in that: described semiconductor element substrate is immersed in the described immersion fluid.
23. the method for manufacturing semiconductor element according to claim 20 is characterized in that: described semiconductor element substrate is disposed on the supporting platform seat.
24. the method for manufacturing semiconductor element according to claim 23 is characterized in that: described supporting platform seat is immersed in the described immersion fluid.
25. the method for manufacturing semiconductor element according to claim 20 is characterized in that: described method comprises develops to described photosensitive material layer.
26. the method for manufacturing semiconductor element according to claim 25 is characterized in that: described photosensitive material layer is carried out step of developing comprise described photosensitive material layer is immersed in tetramethyl ammonium hydroxide solution.
27. the method for manufacturing semiconductor element according to claim 20, it is characterized in that: before forming photosensitive material layer on the described semiconductor element substrate, on described semiconductor element substrate, form earlier the layer of material layer, and the described photosensitive material layer that forms of back is used for graphical described material layer.
28. the method for manufacturing semiconductor element according to claim 27 is characterized in that: described material layer is a conductive layer.
29. the method for manufacturing semiconductor element according to claim 28, it is characterized in that: the step of utilizing described graphical photosensitive material layer to make semiconductor element as the cover curtain comprises, utilizes described graphical photosensitive material layer as covering the described conductive layer of curtain etching to form a gate.
30. the method for manufacturing semiconductor element according to claim 27 is characterized in that: described material layer is a dielectric layer.
31. the method for manufacturing semiconductor element according to claim 30, it is characterized in that: the step of utilizing described graphical photosensitive material layer to make semiconductor element as the cover curtain comprises, utilize described graphical photosensitive material layer as the described dielectric layer of cover curtain etching forming a groove, and fill up this groove with a conductive layer.
32. the method for manufacturing semiconductor element according to claim 20 is characterized in that:, be formed with one deck barrier layer on the described photosensitive material layer providing the luminous energy bundle directly to pass before described immersion fluid shines described photosensitive material layer.
33. the method for manufacturing semiconductor element according to claim 32 is characterized in that: the method that forms described barrier layer comprises the combination of described photosensitive material laminar surface being carried out plasma treatment, surface treatment, chemical treatment, ion implantation, thermal treatment or above-mentioned disposal route.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49415403P | 2003-08-11 | 2003-08-11 | |
| US60/494,154 | 2003-08-11 | ||
| US10/826,602 US7579135B2 (en) | 2003-08-11 | 2004-04-16 | Lithography apparatus for manufacture of integrated circuits |
| US10/826,602 | 2004-04-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1624588A CN1624588A (en) | 2005-06-08 |
| CN1624588B true CN1624588B (en) | 2011-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410058067 Active CN1624588B (en) | 2003-08-11 | 2004-08-11 | Immersion lithographic system and method of manufacturing semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN1624588B (en) |
| SG (1) | SG109614A1 (en) |
| TW (1) | TWI244683B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996145B (en) * | 2005-12-31 | 2010-08-25 | 上海集成电路研发中心有限公司 | Method for reducing water pollution of optical elements in immersion type photoengraving technology |
| CN114527627B (en) * | 2022-03-09 | 2023-10-10 | 中国科学院宁波材料技术与工程研究所 | Photoetching method for preparing organic semiconductor micro-device without photoresist and micro-device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4480910A (en) * | 1981-03-18 | 1984-11-06 | Hitachi, Ltd. | Pattern forming apparatus |
| US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
| US5610683A (en) * | 1992-11-27 | 1997-03-11 | Canon Kabushiki Kaisha | Immersion type projection exposure apparatus |
| US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
-
2004
- 2004-08-10 SG SG200405091A patent/SG109614A1/en unknown
- 2004-08-10 TW TW93123894A patent/TWI244683B/en active
- 2004-08-11 CN CN 200410058067 patent/CN1624588B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4480910A (en) * | 1981-03-18 | 1984-11-06 | Hitachi, Ltd. | Pattern forming apparatus |
| US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
| US5610683A (en) * | 1992-11-27 | 1997-03-11 | Canon Kabushiki Kaisha | Immersion type projection exposure apparatus |
| US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI244683B (en) | 2005-12-01 |
| SG109614A1 (en) | 2005-03-30 |
| TW200515479A (en) | 2005-05-01 |
| CN1624588A (en) | 2005-06-08 |
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