CN1605126A - 带有一个或更多通孔的半导体结构 - Google Patents
带有一个或更多通孔的半导体结构 Download PDFInfo
- Publication number
- CN1605126A CN1605126A CNA028252926A CN02825292A CN1605126A CN 1605126 A CN1605126 A CN 1605126A CN A028252926 A CNA028252926 A CN A028252926A CN 02825292 A CN02825292 A CN 02825292A CN 1605126 A CN1605126 A CN 1605126A
- Authority
- CN
- China
- Prior art keywords
- layer
- etching
- hole
- semiconductor
- semiconductor structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 claims abstract description 71
- 238000001465 metallisation Methods 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 128
- 238000005530 etching Methods 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 22
- 239000000377 silicon dioxide Substances 0.000 claims description 21
- 235000012239 silicon dioxide Nutrition 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 9
- 230000005693 optoelectronics Effects 0.000 claims description 6
- 238000009736 wetting Methods 0.000 claims description 5
- 239000003963 antioxidant agent Substances 0.000 claims description 3
- 230000003078 antioxidant effect Effects 0.000 claims description 3
- 235000006708 antioxidants Nutrition 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- 239000011229 interlayer Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000002146 bilateral effect Effects 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000012792 core layer Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- VZDYWEUILIUIDF-UHFFFAOYSA-J cerium(4+);disulfate Chemical compound [Ce+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O VZDYWEUILIUIDF-UHFFFAOYSA-J 0.000 description 1
- 229910000355 cerium(IV) sulfate Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4245—Mounting of the opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/4279—Radio frequency signal propagation aspects of the electrical connection, high frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32969901P | 2001-10-17 | 2001-10-17 | |
US60/329,699 | 2001-10-17 | ||
US10/264,440 | 2002-10-04 | ||
US10/264,440 US6818464B2 (en) | 2001-10-17 | 2002-10-04 | Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1605126A true CN1605126A (zh) | 2005-04-06 |
CN100377333C CN100377333C (zh) | 2008-03-26 |
Family
ID=26950546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028252926A Expired - Lifetime CN100377333C (zh) | 2001-10-17 | 2002-10-15 | 带有一个或更多通孔的半导体结构 |
Country Status (9)
Country | Link |
---|---|
US (3) | US6818464B2 (zh) |
EP (1) | EP1436837B1 (zh) |
JP (1) | JP4546087B2 (zh) |
CN (1) | CN100377333C (zh) |
AT (1) | ATE464656T1 (zh) |
AU (1) | AU2002351771A1 (zh) |
DE (1) | DE60236007D1 (zh) |
HK (1) | HK1074913A1 (zh) |
WO (1) | WO2003034490A2 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102403413A (zh) * | 2010-09-19 | 2012-04-04 | 常州普美电子科技有限公司 | Led散热基板、led封装结构及二者的制作方法 |
CN102460687A (zh) * | 2009-06-17 | 2012-05-16 | 浜松光子学株式会社 | 层叠配线基板 |
CN102079503B (zh) * | 2009-11-26 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | 构成mems器件的硅衬底的刻蚀方法 |
CN103579331A (zh) * | 2012-07-20 | 2014-02-12 | 三星电子株式会社 | 氮化物基半导体器件及其制造方法 |
Families Citing this family (110)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7345316B2 (en) * | 2000-10-25 | 2008-03-18 | Shipley Company, L.L.C. | Wafer level packaging for optoelectronic devices |
US6932519B2 (en) | 2000-11-16 | 2005-08-23 | Shipley Company, L.L.C. | Optical device package |
US6827503B2 (en) * | 2000-12-01 | 2004-12-07 | Shipley Company, L.L.C. | Optical device package having a configured frame |
US6883977B2 (en) * | 2000-12-14 | 2005-04-26 | Shipley Company, L.L.C. | Optical device package for flip-chip mounting |
US7078671B1 (en) * | 2001-08-06 | 2006-07-18 | Shipley Company, L.L.C. | Silicon optical microbench devices and wafer-level testing thereof |
US6818464B2 (en) * | 2001-10-17 | 2004-11-16 | Hymite A/S | Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes |
US7343535B2 (en) * | 2002-02-06 | 2008-03-11 | Avago Technologies General Ip Dte Ltd | Embedded testing capability for integrated serializer/deserializers |
US6969204B2 (en) * | 2002-11-26 | 2005-11-29 | Hymite A/S | Optical package with an integrated lens and optical assemblies incorporating the package |
JP4220229B2 (ja) * | 2002-12-16 | 2009-02-04 | 大日本印刷株式会社 | 荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスクの製造方法 |
JP2004273438A (ja) * | 2003-02-17 | 2004-09-30 | Pioneer Electronic Corp | エッチング用マスク |
WO2004087541A2 (en) * | 2003-04-04 | 2004-10-14 | Mobile Concepts, Inc. | Pallet and conveyor system for loading onto transport |
US7432788B2 (en) | 2003-06-27 | 2008-10-07 | Memscap, Inc. | Microelectromechanical magnetic switches having rotors that rotate into a recess in a substrate |
EP1517166B1 (en) * | 2003-09-15 | 2015-10-21 | Nuvotronics, LLC | Device package and methods for the fabrication and testing thereof |
US6982437B2 (en) * | 2003-09-19 | 2006-01-03 | Agilent Technologies, Inc. | Surface emitting laser package having integrated optical element and alignment post |
US20050063431A1 (en) * | 2003-09-19 | 2005-03-24 | Gallup Kendra J. | Integrated optics and electronics |
US7520679B2 (en) * | 2003-09-19 | 2009-04-21 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Optical device package with turning mirror and alignment post |
US6953990B2 (en) * | 2003-09-19 | 2005-10-11 | Agilent Technologies, Inc. | Wafer-level packaging of optoelectronic devices |
US20050063648A1 (en) * | 2003-09-19 | 2005-03-24 | Wilson Robert Edward | Alignment post for optical subassemblies made with cylindrical rods, tubes, spheres, or similar features |
US6930367B2 (en) * | 2003-10-31 | 2005-08-16 | Robert Bosch Gmbh | Anti-stiction technique for thin film and wafer-bonded encapsulated microelectromechanical systems |
US8084866B2 (en) | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
US7091124B2 (en) | 2003-11-13 | 2006-08-15 | Micron Technology, Inc. | Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices |
US7223629B2 (en) * | 2003-12-11 | 2007-05-29 | Intel Corporation | Method and apparatus for manufacturing a transistor-outline (TO) can having a ceramic header |
DE102004006698A1 (de) | 2004-02-11 | 2005-09-01 | Robert Bosch Gmbh | Mikromechanischer Sensor |
US20050213995A1 (en) * | 2004-03-26 | 2005-09-29 | Myunghee Lee | Low power and low jitter optical receiver for fiber optic communication link |
US7681306B2 (en) * | 2004-04-28 | 2010-03-23 | Hymite A/S | Method of forming an assembly to house one or more micro components |
US20050247894A1 (en) | 2004-05-05 | 2005-11-10 | Watkins Charles M | Systems and methods for forming apertures in microfeature workpieces |
US20050269688A1 (en) * | 2004-06-03 | 2005-12-08 | Lior Shiv | Microelectromechanical systems (MEMS) devices integrated in a hermetically sealed package |
US7045827B2 (en) * | 2004-06-24 | 2006-05-16 | Gallup Kendra J | Lids for wafer-scale optoelectronic packages |
US7232754B2 (en) | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
KR100594716B1 (ko) * | 2004-07-27 | 2006-06-30 | 삼성전자주식회사 | 공동부를 구비한 캡 웨이퍼, 이를 이용한 반도체 칩, 및그 제조방법 |
TWI255503B (en) * | 2004-07-30 | 2006-05-21 | Touch Micro System Tech | Method of double-sided etching |
CN100454144C (zh) * | 2004-08-05 | 2009-01-21 | 探微科技股份有限公司 | 双面蚀刻晶片的方法 |
US7083425B2 (en) | 2004-08-27 | 2006-08-01 | Micron Technology, Inc. | Slanted vias for electrical circuits on circuit boards and other substrates |
US7300857B2 (en) | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
US7683393B2 (en) * | 2004-12-07 | 2010-03-23 | Ngk Spark Plug Co., Ltd. | Wiring substrate for mounting light emitting element |
EP1839172A2 (en) * | 2004-12-08 | 2007-10-03 | B-Obvious Ltd. | Bidirectional data transfer optimization and content control for networks |
US7271482B2 (en) | 2004-12-30 | 2007-09-18 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US7553695B2 (en) * | 2005-03-17 | 2009-06-30 | Hymite A/S | Method of fabricating a package for a micro component |
US7262622B2 (en) * | 2005-03-24 | 2007-08-28 | Memsic, Inc. | Wafer-level package for integrated circuits |
US7495462B2 (en) * | 2005-03-24 | 2009-02-24 | Memsic, Inc. | Method of wafer-level packaging using low-aspect ratio through-wafer holes |
US7449355B2 (en) * | 2005-04-27 | 2008-11-11 | Robert Bosch Gmbh | Anti-stiction technique for electromechanical systems and electromechanical device employing same |
US7795134B2 (en) | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US7161283B1 (en) * | 2005-06-30 | 2007-01-09 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Method for placing metal contacts underneath FBAR resonators |
US20070004079A1 (en) * | 2005-06-30 | 2007-01-04 | Geefay Frank S | Method for making contact through via contact to an offset contactor inside a cap for the wafer level packaging of FBAR chips |
US7528691B2 (en) * | 2005-08-26 | 2009-05-05 | Innovative Micro Technology | Dual substrate electrostatic MEMS switch with hermetic seal and method of manufacture |
US7233048B2 (en) * | 2005-08-26 | 2007-06-19 | Innovative Micro Technology | MEMS device trench plating process and apparatus for through hole vias |
US7960208B2 (en) * | 2005-08-26 | 2011-06-14 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with raised feature |
US8736081B2 (en) | 2005-08-26 | 2014-05-27 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with keeper layer |
US7569926B2 (en) * | 2005-08-26 | 2009-08-04 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with raised feature |
US7582969B2 (en) * | 2005-08-26 | 2009-09-01 | Innovative Micro Technology | Hermetic interconnect structure and method of manufacture |
US20070048887A1 (en) * | 2005-08-26 | 2007-03-01 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy |
US7262134B2 (en) | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7863187B2 (en) | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US8786165B2 (en) * | 2005-09-16 | 2014-07-22 | Tsmc Solid State Lighting Ltd. | QFN/SON compatible package with SMT land pads |
EP2202791B1 (en) * | 2005-11-16 | 2016-01-27 | STMicroelectronics Srl | Semiconductor device having deep through vias |
KR101177885B1 (ko) * | 2006-01-16 | 2012-08-28 | 삼성전자주식회사 | 웨이퍼 레벨 패키징 캡 및 그 제조방법 |
US8044412B2 (en) * | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
US20070170528A1 (en) | 2006-01-20 | 2007-07-26 | Aaron Partridge | Wafer encapsulated microelectromechanical structure and method of manufacturing same |
US7528422B2 (en) * | 2006-01-20 | 2009-05-05 | Hymite A/S | Package for a light emitting element with integrated electrostatic discharge protection |
US7749899B2 (en) | 2006-06-01 | 2010-07-06 | Micron Technology, Inc. | Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces |
JP2008010659A (ja) * | 2006-06-29 | 2008-01-17 | Disco Abrasive Syst Ltd | ビアホールの加工方法 |
US7629249B2 (en) | 2006-08-28 | 2009-12-08 | Micron Technology, Inc. | Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods |
US7902643B2 (en) | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods |
WO2008035261A1 (en) | 2006-09-22 | 2008-03-27 | Nxp B.V. | Electronic device and method for making the same |
US7531445B2 (en) | 2006-09-26 | 2009-05-12 | Hymite A/S | Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane |
KR100831405B1 (ko) * | 2006-10-02 | 2008-05-21 | (주) 파이오닉스 | 웨이퍼 본딩 패키징 방법 |
JP4919984B2 (ja) * | 2007-02-25 | 2012-04-18 | サムスン エレクトロニクス カンパニー リミテッド | 電子デバイスパッケージとその形成方法 |
WO2009022982A1 (en) * | 2007-08-10 | 2009-02-19 | Agency For Science, Technology And Research | Nano-interconnects for atomic and molecular scale circuits |
SG150410A1 (en) | 2007-08-31 | 2009-03-30 | Micron Technology Inc | Partitioned through-layer via and associated systems and methods |
US7884015B2 (en) | 2007-12-06 | 2011-02-08 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
US20090181500A1 (en) * | 2008-01-15 | 2009-07-16 | Jochen Kuhmann | Fabrication of Compact Semiconductor Packages |
US20090273002A1 (en) * | 2008-05-05 | 2009-11-05 | Wen-Chih Chiou | LED Package Structure and Fabrication Method |
US7939449B2 (en) * | 2008-06-03 | 2011-05-10 | Micron Technology, Inc. | Methods of forming hybrid conductive vias including small dimension active surface ends and larger dimension back side ends |
US7851818B2 (en) * | 2008-06-27 | 2010-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication of compact opto-electronic component packages |
DE102008033395B3 (de) * | 2008-07-16 | 2010-02-04 | Austriamicrosystems Ag | Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement |
US20100084752A1 (en) * | 2008-10-08 | 2010-04-08 | Honeywell International Inc. | Systems and methods for implementing a wafer level hermetic interface chip |
JP5246103B2 (ja) * | 2008-10-16 | 2013-07-24 | 大日本印刷株式会社 | 貫通電極基板の製造方法 |
SE534510C2 (sv) * | 2008-11-19 | 2011-09-13 | Silex Microsystems Ab | Funktionell inkapsling |
US8240203B2 (en) * | 2008-12-11 | 2012-08-14 | Honeywell International Inc. | MEMS devices and methods with controlled die bonding areas |
US7842613B1 (en) | 2009-01-07 | 2010-11-30 | Integrated Device Technology, Inc. | Methods of forming microelectronic packaging substrates having through-substrate vias therein |
US20100176507A1 (en) * | 2009-01-14 | 2010-07-15 | Hymite A/S | Semiconductor-based submount with electrically conductive feed-throughs |
US8309973B2 (en) * | 2009-02-12 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-based sub-mount for an opto-electronic device |
US8729591B2 (en) | 2009-02-13 | 2014-05-20 | Tsmc Solid State Lighting Ltd. | Opto-electronic device package with a semiconductor-based sub-mount having SMD metal contacts |
US7838878B2 (en) * | 2009-03-24 | 2010-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-based sub-mounts for optoelectronic devices with conductive paths to facilitate testing and binning |
US20100320595A1 (en) * | 2009-06-22 | 2010-12-23 | Honeywell International Inc. | Hybrid hermetic interface chip |
US20110042803A1 (en) * | 2009-08-24 | 2011-02-24 | Chen-Fu Chu | Method For Fabricating A Through Interconnect On A Semiconductor Substrate |
KR101276333B1 (ko) * | 2009-11-30 | 2013-06-18 | 한국전자통신연구원 | 3차원 인터커넥션 구조 및 그 제조 방법 |
WO2011109442A2 (en) * | 2010-03-02 | 2011-09-09 | Oliver Steven D | Led packaging with integrated optics and methods of manufacturing the same |
DE102010056562B4 (de) * | 2010-12-30 | 2018-10-11 | Snaptrack, Inc. | Elektroakustisches Bauelement und Verfahren zur Herstellung des elektroakustischen Bauelements |
DE102010056572B4 (de) | 2010-12-30 | 2018-12-27 | Snaptrack, Inc. | Elektronisches Bauelement und Verfahren zur Herstellung des elektronischen Bauelements |
US8654541B2 (en) | 2011-03-24 | 2014-02-18 | Toyota Motor Engineering & Manufacturing North America, Inc. | Three-dimensional power electronics packages |
JP5598420B2 (ja) * | 2011-05-24 | 2014-10-01 | 株式会社デンソー | 電子デバイスの製造方法 |
FR2976402A1 (fr) * | 2011-06-07 | 2012-12-14 | St Microelectronics Sa | Structure d'interconnexion electrique pour circuits integres, et procede de fabrication correspondant |
US8324082B1 (en) | 2011-09-15 | 2012-12-04 | SemiLEDs Optoelectronics Co., Ltd. | Method for fabricating conductive substrates for electronic and optoelectronic devices |
US9162878B2 (en) | 2012-08-30 | 2015-10-20 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with raised feature and wetting layer |
EP2900319B8 (en) * | 2012-09-28 | 2017-08-30 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Implantable devices |
US20150262902A1 (en) | 2014-03-12 | 2015-09-17 | Invensas Corporation | Integrated circuits protected by substrates with cavities, and methods of manufacture |
US9481572B2 (en) * | 2014-07-17 | 2016-11-01 | Texas Instruments Incorporated | Optical electronic device and method of fabrication |
US10056310B2 (en) * | 2016-09-26 | 2018-08-21 | International Business Machines Corporation | Electrolytic seal |
US10002844B1 (en) | 2016-12-21 | 2018-06-19 | Invensas Bonding Technologies, Inc. | Bonded structures |
WO2018147940A1 (en) | 2017-02-09 | 2018-08-16 | Invensas Bonding Technologies, Inc. | Bonded structures |
US10508030B2 (en) | 2017-03-21 | 2019-12-17 | Invensas Bonding Technologies, Inc. | Seal for microelectronic assembly |
US10242967B2 (en) | 2017-05-16 | 2019-03-26 | Raytheon Company | Die encapsulation in oxide bonded wafer stack |
US11105770B2 (en) | 2017-09-14 | 2021-08-31 | International Business Machines Corporation | Nanopore and DNA sensor employing nanopore |
US10319654B1 (en) | 2017-12-01 | 2019-06-11 | Cubic Corporation | Integrated chip scale packages |
US10923408B2 (en) | 2017-12-22 | 2021-02-16 | Invensas Bonding Technologies, Inc. | Cavity packages |
US11380597B2 (en) | 2017-12-22 | 2022-07-05 | Invensas Bonding Technologies, Inc. | Bonded structures |
US10395940B1 (en) | 2018-03-13 | 2019-08-27 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method of etching microelectronic mechanical system features in a silicon wafer |
US11004757B2 (en) | 2018-05-14 | 2021-05-11 | Invensas Bonding Technologies, Inc. | Bonded structures |
US11398415B2 (en) * | 2018-09-19 | 2022-07-26 | Intel Corporation | Stacked through-silicon vias for multi-device packages |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55166941A (en) * | 1979-06-13 | 1980-12-26 | Nec Corp | Semiconductor device |
US4903120A (en) * | 1985-11-22 | 1990-02-20 | Texas Instruments Incorporated | Chip carrier with interconnects on lid |
US4775573A (en) * | 1987-04-03 | 1988-10-04 | West-Tronics, Inc. | Multilayer PC board using polymer thick films |
US4897711A (en) * | 1988-03-03 | 1990-01-30 | American Telephone And Telegraph Company | Subassembly for optoelectronic devices |
US4904036A (en) * | 1988-03-03 | 1990-02-27 | American Telephone And Telegraph Company, At&T Bell Laboratories | Subassemblies for optoelectronic hybrid integrated circuits |
DE3909186A1 (de) * | 1989-03-21 | 1990-09-27 | Endress Hauser Gmbh Co | Elektrisch leitende durchfuehrung und verfahren zu ihrer herstellung |
US4961821A (en) | 1989-11-22 | 1990-10-09 | Xerox Corporation | Ode through holes and butt edges without edge dicing |
US5023881A (en) * | 1990-06-19 | 1991-06-11 | At&T Bell Laboratories | Photonics module and alignment method |
US5068203A (en) * | 1990-09-04 | 1991-11-26 | Delco Electronics Corporation | Method for forming thin silicon membrane or beam |
JP2976642B2 (ja) * | 1991-11-07 | 1999-11-10 | 日本電気株式会社 | 光結合回路 |
US5656507A (en) * | 1992-01-28 | 1997-08-12 | British Telecommunications Public Limited Company | Process for self-aligning circuit components brought into abutment by surface tension of a molten material and bonding under tension |
JP3239274B2 (ja) * | 1992-02-26 | 2001-12-17 | 富士通株式会社 | インクジェットヘッドの製造方法 |
US5308442A (en) * | 1993-01-25 | 1994-05-03 | Hewlett-Packard Company | Anisotropically etched ink fill slots in silicon |
US5454161A (en) * | 1993-04-29 | 1995-10-03 | Fujitsu Limited | Through hole interconnect substrate fabrication process |
US5401913A (en) * | 1993-06-08 | 1995-03-28 | Minnesota Mining And Manufacturing Company | Electrical interconnections between adjacent circuit board layers of a multi-layer circuit board |
JP2692625B2 (ja) * | 1994-12-08 | 1997-12-17 | 日本電気株式会社 | 半導体基板の製造方法 |
JP3343875B2 (ja) * | 1995-06-30 | 2002-11-11 | キヤノン株式会社 | インクジェットヘッドの製造方法 |
JP3193863B2 (ja) * | 1996-01-31 | 2001-07-30 | ホーヤ株式会社 | 転写マスクの製造方法 |
IT1283224B1 (it) | 1996-03-11 | 1998-04-16 | Pirelli Cavi Spa | Apparato e metodo di protezione per dispositivi in fibra ottica |
JPH09266266A (ja) * | 1996-03-28 | 1997-10-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法並びに半導体装置のキャップ |
US5703394A (en) * | 1996-06-10 | 1997-12-30 | Motorola | Integrated electro-optical package |
US5891354A (en) * | 1996-07-26 | 1999-04-06 | Fujitsu Limited | Methods of etching through wafers and substrates with a composite etch stop layer |
JP3724110B2 (ja) * | 1997-04-24 | 2005-12-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
JP3039463B2 (ja) * | 1997-07-29 | 2000-05-08 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6300686B1 (en) * | 1997-10-02 | 2001-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor chip bonded to a thermal conductive sheet having a filled through hole for electrical connection |
DE69737262T2 (de) * | 1997-11-26 | 2007-11-08 | Stmicroelectronics S.R.L., Agrate Brianza | Herstellungsverfahren für einen Vorder-Hinterseiten-Durchkontakt in mikro-integrierten Schaltungen |
US6117794A (en) * | 1998-01-16 | 2000-09-12 | Lucent Technologies, Inc. | Method for improved metal oxide bonding of optical elements |
US6072815A (en) * | 1998-02-27 | 2000-06-06 | Litton Systems, Inc. | Microlaser submount assembly and associates packaging method |
US6036872A (en) * | 1998-03-31 | 2000-03-14 | Honeywell Inc. | Method for making a wafer-pair having sealed chambers |
KR100280622B1 (ko) * | 1998-04-02 | 2001-03-02 | 윤종용 | 반도체 장치의 콘택 형성 방법 |
US6303986B1 (en) | 1998-07-29 | 2001-10-16 | Silicon Light Machines | Method of and apparatus for sealing an hermetic lid to a semiconductor die |
KR100855530B1 (ko) * | 1998-09-03 | 2008-09-01 | 이비덴 가부시키가이샤 | 다층프린트배선판 및 그 제조방법 |
EP1061578A4 (en) | 1998-12-16 | 2001-07-18 | Seiko Epson Corp | SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, CIRCUIT BOARD AND ELECTRONIC EQUIPMENT AND METHODS OF PRODUCING THE SAME |
US6588949B1 (en) | 1998-12-30 | 2003-07-08 | Honeywell Inc. | Method and apparatus for hermetically sealing photonic devices |
US6221769B1 (en) * | 1999-03-05 | 2001-04-24 | International Business Machines Corporation | Method for integrated circuit power and electrical connections via through-wafer interconnects |
US6291779B1 (en) * | 1999-06-30 | 2001-09-18 | International Business Machines Corporation | Fine pitch circuitization with filled plated through holes |
US6458513B1 (en) | 1999-07-13 | 2002-10-01 | Input/Output, Inc. | Temporary bridge for micro machined structures |
JP3595817B2 (ja) * | 1999-09-20 | 2004-12-02 | 株式会社トッパンNecサーキットソリューションズ | 光モジュールの実装方法及び実装構造 |
JP2001127208A (ja) * | 1999-10-29 | 2001-05-11 | Matsushita Electric Works Ltd | 半導体チップの実装構造及びその製造方法 |
US6653572B2 (en) * | 2001-02-07 | 2003-11-25 | The Furukawa Electric Co., Ltd. | Multilayer circuit board |
US6577427B1 (en) * | 2001-02-20 | 2003-06-10 | Nayna Networks, Inc. | Process for manufacturing mirror devices using semiconductor technology |
US6818464B2 (en) * | 2001-10-17 | 2004-11-16 | Hymite A/S | Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes |
US6660564B2 (en) * | 2002-01-25 | 2003-12-09 | Sony Corporation | Wafer-level through-wafer packaging process for MEMS and MEMS package produced thereby |
CN103010139B (zh) * | 2011-09-28 | 2015-03-25 | 陈宗贤 | 开车门防止后车追撞的安全预警装置 |
-
2002
- 2002-10-04 US US10/264,440 patent/US6818464B2/en not_active Expired - Lifetime
- 2002-10-15 JP JP2003537117A patent/JP4546087B2/ja not_active Expired - Lifetime
- 2002-10-15 DE DE60236007T patent/DE60236007D1/de not_active Expired - Lifetime
- 2002-10-15 WO PCT/EP2002/011605 patent/WO2003034490A2/en active Application Filing
- 2002-10-15 CN CNB028252926A patent/CN100377333C/zh not_active Expired - Lifetime
- 2002-10-15 EP EP02787490A patent/EP1436837B1/en not_active Expired - Lifetime
- 2002-10-15 AU AU2002351771A patent/AU2002351771A1/en not_active Abandoned
- 2002-10-15 AT AT02787490T patent/ATE464656T1/de not_active IP Right Cessation
-
2004
- 2004-07-20 US US10/894,989 patent/US7057274B2/en not_active Expired - Lifetime
- 2004-10-05 US US10/958,524 patent/US7081412B2/en not_active Expired - Lifetime
-
2005
- 2005-08-16 HK HK05107072A patent/HK1074913A1/xx not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102460687A (zh) * | 2009-06-17 | 2012-05-16 | 浜松光子学株式会社 | 层叠配线基板 |
TWI508240B (zh) * | 2009-06-17 | 2015-11-11 | Hamamatsu Photonics Kk | Laminated wiring board |
CN102079503B (zh) * | 2009-11-26 | 2012-08-29 | 中芯国际集成电路制造(上海)有限公司 | 构成mems器件的硅衬底的刻蚀方法 |
CN102403413A (zh) * | 2010-09-19 | 2012-04-04 | 常州普美电子科技有限公司 | Led散热基板、led封装结构及二者的制作方法 |
CN103579331A (zh) * | 2012-07-20 | 2014-02-12 | 三星电子株式会社 | 氮化物基半导体器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1436837A2 (en) | 2004-07-14 |
JP4546087B2 (ja) | 2010-09-15 |
US20050059204A1 (en) | 2005-03-17 |
WO2003034490A2 (en) | 2003-04-24 |
WO2003034490A3 (en) | 2004-04-01 |
JP2005506701A (ja) | 2005-03-03 |
AU2002351771A1 (en) | 2003-04-28 |
HK1074913A1 (en) | 2005-11-25 |
US20040266038A1 (en) | 2004-12-30 |
US7057274B2 (en) | 2006-06-06 |
ATE464656T1 (de) | 2010-04-15 |
US20030071283A1 (en) | 2003-04-17 |
US6818464B2 (en) | 2004-11-16 |
CN100377333C (zh) | 2008-03-26 |
US7081412B2 (en) | 2006-07-25 |
EP1436837B1 (en) | 2010-04-14 |
DE60236007D1 (de) | 2010-05-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1605126A (zh) | 带有一个或更多通孔的半导体结构 | |
EP2700092B1 (en) | Vias in porous substrates | |
US8466007B2 (en) | Power semiconductor module and fabrication method | |
TWI446509B (zh) | 具有覆蓋通孔之金屬墊之微電子元件 | |
TWI503938B (zh) | 應力降低之直通矽晶穿孔與中介體結構 | |
KR100342897B1 (ko) | 반도체 디바이스 및 그 제조 방법 | |
US7768132B2 (en) | Circuit device and manufacturing method thereof | |
KR102643053B1 (ko) | 반도체 디바이스 어셈블리 | |
CN1716587A (zh) | 内插器及其制造方法以及使用该内插器的半导体器件 | |
CN1684256A (zh) | 具有导电穿透通道的硅芯片载体及其制造方法 | |
CN1534770A (zh) | 半导体装置、电路基板以及电子设备 | |
CN1905141A (zh) | 半导体装置及其制造方法 | |
EP1489658B1 (en) | Method for manufacturing semiconductor package | |
JP2002513510A (ja) | 電子デバイス用インターフェース構造 | |
EP0284624A1 (en) | METHOD FOR PRODUCING AN INTEGRATED CIRCUIT PACK STRUCTURE. | |
KR20080031075A (ko) | 웨이퍼 본딩 패키징 방법 | |
CN1853262A (zh) | 制造导电部件、通道和包括穿过晶片的导电通道的半导体部件方法和集成方案 | |
US11521937B2 (en) | Package structures with built-in EMI shielding | |
EP2718968A1 (en) | Low-stress tsv design using conductive particles | |
CN1574324A (zh) | 半导体装置及其制造方法 | |
TW201246475A (en) | Semiconductor device package and method of manufacturing thereof | |
US20090039472A1 (en) | Structure and method for creating reliable deep via connections in a silicon carrier | |
TW200401400A (en) | Semiconductor device manufacturing method and electronic equipment using same | |
TW201110311A (en) | Method of manufacturing semiconductor chip | |
CN106252276B (zh) | 基于tsv技术开关矩阵射频单元的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1074913 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1074913 Country of ref document: HK |
|
ASS | Succession or assignment of patent right |
Owner name: TAIWEN INTEGRATED CIRCUIT MANUFACTURE CO., LTD. Free format text: FORMER OWNER: HYMITE AS Effective date: 20110314 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: LYNGBY, DENMARK TO: NO. 8, LIXING ROAD 6, HSINCHU SCIENCE PARK, TAIWAN PROVINCE, CHINA |
|
TR01 | Transfer of patent right |
Effective date of registration: 20110314 Address after: Hsinchu Science Park, Taiwan, China force line six, No. eight Patentee after: Taiwan Semiconductor Manufacturing Co.,Ltd. Address before: Danish spirits Patentee before: Schmidt Co.,Ltd. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160509 Address after: Hsinchu City, Taiwan, China Patentee after: Yuanxin Optoelectronics Co.,Ltd. Address before: Hsinchu Science Park, Taiwan, China force line six, No. eight Patentee before: Taiwan Semiconductor Manufacturing Co.,Ltd. Effective date of registration: 20160509 Address after: Hsinchu City, Taiwan, China Patentee after: EPISTAR Corp. Address before: Hsinchu City, Taiwan, China Patentee before: Yuanxin Optoelectronics Co.,Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20080326 |