CN1554118A - 提供去除速率曲线处理的化学机械抛光设备的反馈控制 - Google Patents
提供去除速率曲线处理的化学机械抛光设备的反馈控制 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 357
- 239000000126 substance Substances 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 97
- 239000000463 material Substances 0.000 claims abstract description 49
- 235000012431 wafers Nutrition 0.000 claims description 238
- 238000005516 engineering process Methods 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 34
- 238000012545 processing Methods 0.000 claims description 22
- 239000002002 slurry Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000012360 testing method Methods 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 abstract description 5
- 239000002609 medium Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005457 optimization Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 230000003044 adaptive effect Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 244000309464 bull Species 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 240000004246 Agave americana Species 0.000 description 1
- 235000008754 Agave americana Nutrition 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 241000233805 Phoenix Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001093 holography Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000011221 initial treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000006163 transport media Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/18—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the presence of dressing tools
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/18—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form
- G05B19/19—Numerical control [NC], i.e. automatically operating machines, in particular machine tools, e.g. in a manufacturing environment, so as to execute positioning, movement or co-ordinated operations by means of programme data in numerical form characterised by positioning or contouring control systems, e.g. to control position from one programmed point to another or to control movement along a programmed continuous path
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM]
- G05B19/41865—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM] characterised by job scheduling, process planning, material flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/32—Operator till task planning
- G05B2219/32053—Adjust work parameter as function of other cell
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/32—Operator till task planning
- G05B2219/32065—Synchronise set points of processes
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45031—Manufacturing semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
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Abstract
一种在抛光操作中控制晶片表面非均匀性的方法,包括:(a)提供一种晶片抛光模式,该模式在晶片上定义多个分区,并且在抛光工艺的抛光步骤中,确定这些分区的每一个分区的晶片材料去除速率,其中所述抛光工艺包括多个抛光步骤;(b)根据进料晶片的厚度曲线,用第一抛光配方抛光晶片;(c)为经过步骤(b)抛光的晶片确定晶片厚度曲线;以及(d)基于步骤(c)的所述晶片厚度曲线以及步骤(a)的所述模式计算更新的抛光配方,以保持目标晶片厚度曲线。所述模式定义工具状态对抛光效果的影响。所述方法可以用来对多个台板台提供反馈数据。
Description
本申请要求对2001年6月19日申请的题目为:“半导体制造工艺的先进工艺控制”的申请60/298878及2001年8月31日申请的题目为:“提供去除速率曲线处理的化学机械抛光设备的反馈控制”的申请09/394955享有优先权,上述两项申请被收编在此以供参考。
技术领域
本发明关于一般半导体基片的平面化(planarization)工艺,特别是关于半导体晶片的平面化(planarization)工艺的,而且,尤其是关于平面化工艺中提供反馈控制的一种方法和设备的。
背景技术
化学机械抛光(CMP)用在半导体制造工艺中以获得半导体晶片的完全平面化(full planarization)。该方法包括去除材料(removematerial),例如,用化学腐蚀和机械接触的方法从该晶片(典型材料是二氧化硅SiO2)去除其表面材料(surface material)的牺牲层(sacrificiallayer)。抛光消除(flatten out)高度差别,因为高形貌(topography)(丘)区的材料去除比低形貌(谷)区的快。
CMP工艺一般用扩散(disperse)在碱性或酸性溶液中的研磨浆料(abrasive slurry),通过化学腐蚀和机械接触的共同作用以平面化所述晶片的所述表面。一般CMP设备包括一个抛光工具(其上装有待抛光的附着晶片),该抛光工具位于其上装有抛光垫的可旋转的圆形台板(platen)的上方。工作时,该台板可转动,研磨浆料被引到所述抛光垫上。一旦浆料被喷敷在该抛光垫上后,可向一个旋转头(rotating head)施加一个向下的力,将该附着晶片压靠在该抛光垫上。由于该晶片被压靠在该抛光垫上,该晶片即被进行机械与化学抛光。
CMP工艺的效果(effectiveness)可用抛光速率、基片表面的相应光洁度(resulting finish)(无小尺寸粗糙)以及平面度(flatness)(无大尺寸形貌)来衡量。所述抛光速率、光洁度以及平面度由多种因素决定,这些因素包括:所述垫与浆料的组合,所述基片与所述垫之间的相对速度(relative speed),以及将所述基片压靠在所述抛光垫上的所述压力。
随着半导体工艺精细程度的提高,CMP工艺对该制造工艺越来越重要,特别是,其在控制和最小化晶片内厚度(WIW)的非均匀性方面越来越重要。在抛光过程中,多种因素会导致整个晶片表面的变化(variation)。例如,表面形貌的变化可归因于在所述CMP抛光设备中的所述处理条件(processing condition)的漂移(drift)。典型地,所述CMP设备可为特定工艺调整到最佳状态,但是由于所述工艺的化学和机械改变,例如,在抛光过程中所述抛光垫的改变,工艺消耗品的降级退化(degradation)以及其它因素,所述CMP工艺可能偏离其最佳工艺状态。除了处理漂移(processing drift)以外,进入所述CMP工艺的所述晶片表面也可能是非均匀的,这加剧了由所述工艺引起的抛光后整个表面的变化。
目前修正(correct)处理漂移的方法包括反馈控制,在该反馈控制中,将在当前处理中生成的信息用于调整未来处理流程(processing run)中。在抛光步骤的此反馈控制中使用的控制变量(control variable)包括:抛光工具的摇臂振动幅度(arm oscillation length)。另外,还建立反馈回路(feedback loop)以优化抛光垫调节(polishing padconditioning)。然而,在当今的晶片制造环境中,这些方案措施还不能令人满意地补偿上述效应的影响。
本发明可以直接克服,或至少部分地减轻一个或者多个上面提出的问题所造成的影响。
发明内容
本发明关于基片(例如半导体晶片)表面平面化的一种方法,设备和介质,以改进对晶片厚度曲线的流程到流程(run to run)的控制。本发明采用一种平面化工艺(planarization process)的模式(其可以作为单一模式或多重模式实施)预测所述整个晶片表面的材料去除,并改善晶片内厚度(within wafer thickness)的均匀性。来自预测结果的偏差(deviation)用于设定新的抛光参数(polishing parameter),这些抛光参数被反馈回所述工艺以提高工艺效果。
在本发明的一个方式中,一种在抛光操作中产生均匀晶片厚度曲线的方法包括:(a)提供一种晶片抛光模式,该模式在晶片上定义多个分区,并且在抛光步骤中,确定这些分区的每一个分区的晶片材料去除速率;以及(b)用一个为每个分区生成目标厚度曲线(targetthickness profile)的抛光配方(polishing recipe),抛光晶片。
在本发明的另一方式中,在抛光操作中,一种控制晶片表面非均匀性的方法包括:(a)提供一种晶片抛光模式,该模式在晶片上定义多个分区,并且在抛光工艺的抛光步骤中,确定这些分区的每一个分区的晶片材料去除速率;其中所述抛光工艺包括多个抛光步骤;(b)根据进料晶片的厚度曲线,用第一抛光配方,抛光晶片;(c)为经过步骤(b)抛光的晶片确定晶片厚度曲线;以及(d)基于步骤(c)的所述晶片厚度曲线以及步骤(a)的所述模式,计算更新的抛光配方,以保持目标晶片厚度曲线(target wafer thickness profile)。
在本发明的至少一些实施例中,所述第一抛光配方建立在步骤(a)的所述模式基础上,以获得所述目标晶片厚度曲线,或者,所述第一抛光配方凭经验确定。
在本发明的至少一些实施例中,步骤(a)的所述模式中的所述多个分区包括:从所述晶片中心点沿径向向外扩展的围绕该中心的分区。所述模式可以包括四个或更多这样的分区。
在本发明的至少一些实施例中,步骤(b)的所述抛光包括在多个抛光台(polishing station)抛光所述晶片。所述抛光步骤可以在三个抛光台进行。
在本发明的至少一些实施例中,所述抛光配方至少在两个抛光台上是相同的。
在本发明的至少一些实施例中,所述抛光配方至少在两个抛光台上是不同的。
在本发明的至少一些实施例中,步骤(c)计算所述更新的抛光配方包括计算所述多个抛光台的每一个的更新的抛光配方。
在本发明的至少一些实施例中,所述多个抛光台中的每个抛光台的所述更新的抛光配方反映(account for)各个单独的抛光台上的工具状态。
在本发明的至少一些实施例中,提供一个模式的步骤包括:(e)在一个或多个晶片上定义的多个分区的每一分区,测量抛光前的晶片厚度;(f)抛光所述一个或多个晶片,其中抛光包括:在多个抛光步骤中抛光所述一个或多个晶片;(g)在步骤(g)的所述的抛光步骤的每一步后,在所述多个分区的每一个分区,测量所述一个或多个晶片的晶片材料去除速率;(h)提供一个模式,该模式定义工具状态对抛光效果的影响;以及(i)将所述抛光前的和抛光后的晶片的每个或所有这些分区的厚度记录在一个可记录的介质上;该模式还可以包括:将所取得的数据拟合到一个线性或非线性曲线中,这个曲线建立了所述晶片的一个分区的所述材料去除速率与感兴趣的抛光参数之间的关系。
在本发明的至少一些实施例中,抛光参数包括抛光时间。这些抛光参数还可以包括选自由包括抛光时间,抛光垫向下的力和速度,浆料流量(flow)和成分(composition),调节时间,调节盘向下的力和速度,所述调节盘和所述晶片夹持器(wafer carrier)的振动速度所组成的参数组中的一个参数。
在本发明的至少一些实施例中,分区j(AR’j)在步骤(a)的所述模式中的晶片去除根据下面方程确定:
这里x1,x2,x3,x4和x5分别是抛光步骤1,2,3,4和5的另外的参数值;t1,t2,t3,t4,t5分别是抛光步骤1,2,3,4和5的所述抛光时间,而且ca1j提供了所述变量x在分区j,在抛光步骤(a)对晶片去除的贡献;以及ca2j提供了在抛光步骤(a)中的抛光时间对晶片去除的贡献。晶片材料去除速率曲线可通过用下面比例因子(scaling factor)标度(scaling)该曲线来反映工具状态:
(1+kp·tp+kd·td+kpd·tp·td)
这里的tp和td项分别是抛光垫和盘的寿命,其以小时为单位;而kp,kd和kpd项是将抛光垫和盘寿命与去除速率联系起来的凭经验确定的系数。
在本发明的至少一些实施例中,通过解下面方程获得更新的抛光配方:
这里x是对应于所述抛光配方的时间和其它处理参数的一个矢量;g(x)是所述抛光工艺的所述模式,ysp是一个期望的平均分区晶片厚度的一个矢量;而f(ysp,g(x))是补偿所述模式预测厚度g(x)与期望晶片厚度ysp之间偏差的补偿函数。
在本发明的另一个方式中,为晶片厚度曲线确定模式的一种方法包括:(a)在一个或多个晶片上定义的多个分区的每一分区测量抛光前的晶片厚度;(b)抛光所述一个或多个晶片,其中抛光包括在多个抛光步骤中抛光所述一个或多个晶片;(c)在步骤(b)的所述抛光步骤的每一步后,在所述多个分区的每一个分区,测量所述一个或多个晶片的所述晶片材料去除速率;(d)提供一个模式,该模式定义工具状态对抛光效果的影响;以及(e)将所述抛光前的和抛光后的晶片的每个或所有这些分区的厚度记录在一个可记录的介质上。所述模式还可以包括:将所获得的数据拟合到一个线性或非线性曲线中,这个曲线可以建立所述晶片的一个分区的所述材料去除速率与感兴趣的抛光参数之间的关系。
在本发明的至少一些实施例中,所述抛光参数包括抛光时间。所述抛光参数还可以包括选自由包括抛光时间,抛光垫向下的力和速度,浆料流量和成分,调节时间,调节盘向下的力和速度,所述调节盘和所述晶片夹持器的振动速度所组成的参数组中的一个参数。
在本发明的至少一些实施例中,步骤(a)的所述模式中的加工分区j(AR’j)的所述晶片材料去除速率根据下面的方程确定:
这里x1,x2,x3,x4和x5分别是抛光步骤1,2,3,4和5的另外的参数值;t1,t2,t3,t4和t5分别是抛光步骤1,2,3,4和5的所述抛光时间,并且ca1j提供了所述变量x在分区j中,在抛光步骤(a)对晶片去除的贡献;以及ca2j提供了在抛光步骤(a)中的抛光时间对晶片去除的贡献。所述晶片材料去除速率曲线可通过用下面比例因子(scaling factor)标度(scaling)该曲线反映工具状态:
(1+kp·tp+kd·td+kpd·tp·td)
这里的tp和td项分别指抛光垫和盘的寿命,其以小时为单位;kp,kd和kpd项是将抛光垫和盘寿命与去除速率联系起来的凭经验确定的系数。
在本发明的至少一些实施例中,用少于10个晶片的实验就可以确定一个所述模式。
在本发明的一个方式中,用于调节抛光垫的设备具有一个运载组件,该抛光垫用于平面化基片,该运载组件具有多个固定臂,以将晶片固定在多个抛光垫的多个平整表面(planarizing surface)之上;能控制所述抛光工艺的操作参数的控制装置;以及可与这些控制装置耦合的一种控制器;该控制器运转这些控制装置,将所述抛光工艺的所述操作参数作为一个晶片厚度曲线模式的一个函数进行调整,所述模式包括:定义一个抛光模式,该抛光模式在晶片上定义了多个分区,并且在抛光工艺的抛光步骤中,确定这些分区的每一个分区的晶片材料去除速率,其中所述抛光工艺包括多个抛光步骤。
在本发明的至少一些实施例中,在所述晶片材料去除速率模式中,所述模式根据下面方程,定义一个分区j(AR’j)的晶片去除:
这里x1,x2,x3,x4和x5分别是抛光步骤1,2,3,4和5的另外的参数值;t1,t2,t3,t4,t5分别是抛光步骤1,2,3,4和5的所述抛光时间,而且ca1j提供了所述变量x在分区j中,在抛光步骤(a)对晶片去除的贡献;以及ca2j提供了在抛光步骤(a)中的抛光时间对晶片去除的贡献。
在本发明的另一个方式中,一种计算机可读的介质包括由计算机执行的指令,这些指令包括用于化学机械抛光工艺的计算机-执行软件应用程序,而且执行该工艺的这些指令包括:(a)从化学机械抛光工具中接收与在该化学机械抛光工艺中处理的至少一个晶片的所述晶片去除速率相关的数据;以及(b)从步骤(a)的所述数据,计算更新的抛光配方,其中所述更新的抛光配方是通过确定晶片材料去除速率模式的输出与步骤(a)的所述数据之间的差别来计算。
在本发明的至少一些实施例中,晶片材料去除速率的所述模式在晶片上定义了多个分区,并且在抛光工艺的抛光步骤中,确定这些分区的每一个分区的晶片材料去除速率,其中所述抛光工艺包括多个抛光步骤。
在本发明的至少一些实施例中,在所述晶片材料去除速率模式中的加工分区j(AR’j)的所述晶片去除根据下面方程确定:
这里x1,x2,x3,x4和x5分别是抛光步骤1,2,3,4和5的另外的参数值;t1,t2,t3,t4和t5分别是抛光步骤1,2,3,4和5的所述抛光时间,并且ca1j提供了所述变量x在分区j中,在抛光步骤(a)对晶片去除的贡献;以及ca2j提供了在抛光步骤(a)中的抛光时间对晶片去除的贡献。
术语“目标晶片厚度曲线”表示所述CMP工艺的期望的处理结果。所述曲线允许有一定的公差(tolerance),以便反馈控制系统可以据此定义一个目标以及可接受的标准偏差(standard deviation),其中这些偏差不需要所述抛光配方的更新。术语目标晶片厚度曲线包括所述目标以及由此产生的所述标准偏差。
术语晶片是一般意义上的准备抛光的基本平的物体。晶片包括,除单片结构(monolith structure)外,具有一层或多层,或有薄膜沉积其上的基片。在本说明中,除非特别指出,否则,晶片和薄膜的概念可以互换使用。
“工具状态”指所述CMP设备的可消耗或可变部件(consumableand variabl component)。在大多数情况下,这个术语表示所述调节盘和抛光垫的状态,其在所述垫的寿命以及空载时间内不断改变。典型的调节盘寿命大约为60小时,而抛光垫寿命大约为30小时。
附图说明
参照下面的附图及相关详细描述,可以更充分地理解本发明的各种目的,特征,和优点。附图中和说明中的相同的元件用相同的数字标示。以下附图仅用于描述本发明,并不是为限制本发明的内容和精神,本发明的内容和精神应以所附的权利要求书为准。
图1是一种化学机械抛光设备的立体图。
图2是在一个抛光配方的连续抛光步骤中,一个基片的整个表面氧化物去除(用
表示)曲线图。
图3是一般地说明模式建立过程的流程图。
图4是一个晶片的示意图,该晶片上有为厚度曲线模式定义的分区。
图5是用在CMP抛光操作中的所述反馈回路流程图,其如本发明的至少一些实施例中所设计的那样。
图6是一个CMP工艺的模式建立过程的示意图,其中该CMP工艺使用了两个台板,而这两个台板具有不同的抛光配方,正如本发明的至少一些实施例中所设计的那样。
图7是一种计算机系统的框图,该计算机系统包括用在本发明的至少一些实施例中的工具表示(tool representation)和访问控制(accesscontrol)。
图8是一个软盘图,根据本发明的至少一些实施例,其可以存贮软件的各个部分(portion)。
具体实施方式
图1是典型的CMP设备100的立体图,该设备用于抛光一个或多个基片110。该CMP设备100包括一系列抛光台101,以及一个用于装载和卸载基片的转移台(transfer station)102。每一个抛光台都包括一个可旋转的台板103,其上方有抛光垫104。可以提供一个抛光液体源(source of polishing fluid)111,以向所述抛光垫104提供抛光液体112。每一个抛光台可以包括一个相关的垫调节设备105,以便保持所述抛光垫的研磨条件(abrasive condition)。一个可旋转的多头转盘(multi-head carousel)106由中心柱(center post)107支撑并绕该中心柱旋转。所述多头转盘106上装有多个承载头(carrier head)108,这些承载头能够分别围绕其自身芯轴独立旋转。所述承载头108从所述转移台102接收基片并将基片移交给所述转移台102。该承载头(carrierhead)提供可控制的加载(load),即,当所述抛光台和所述承载头准备就绪后,向所述基片施加压力以将其推向所述抛光垫。一些承载头包括护环(retaining ring)109以便固定所述基片并同时协助提供抛光加载(polishing load)。为实现抛光,所述台板103可以旋转(一般以匀速旋转)。此外,可以通过调节护环的压力,通过所述承载头108的每一个承载头单独施加可变的向下的力。固定基片110的所述这些承载头108可以绕轴113旋转并在滑槽(slot)114内前后摆动。
一种CMP工艺需要一系列步骤抛光所述晶片。例如,如图2显示,一个直径为200毫米的晶片,经过从201到208的8个连续抛光步骤的抛光所获得的CMP曲线图。每一个抛光步骤都会从所述基片表面去除被抛光总材料量的一部分材料。另外,通过对201到208曲线的比较,可以看出:每个抛光步骤生成的厚度曲线可能是不同的。最终薄膜厚度曲线是各个单独的抛光步骤产生的厚度曲线的总合(sum),并且在所述晶片的整个表面,产生均匀的晶片厚度。
CMP工艺可以包括从抛光台(台板)到抛光台(台板)转移样品(sample)。一种CMP工艺将晶片去除分散在不同的台板上完成,而每个台板都进行一整套抛光步骤,以在该台板上获得期望的材料去除。任何组合形式的去除方式都是可能的。因此,例如,当希望总的材料去除是
时,可以在抛光台的台板-1上去除
在台板-2上去除
最后在台板-3上去除
各个台板的所述抛光配方可以是相同的或不同的。
上面描述的CMP工艺可被建模以提供改进所述平面化工艺的一种形式(format)。所述模式可以用反映系统状态的原始数据或者用方程表示,例如,多输入-多输出的线性、二次和非线性方程,这些方程描述所述系统各个变量之间的相互关系。利用一个模式,可以改善所述晶片内厚度均匀性,并通过在晶片抛光期间,调整所述抛光参数将此均匀性在后续运行中一直保持,以修正不可建模(unmodel)效应或所述抛光工艺条件的漂移。例如,可以在抛光操作期间,在用于预测并随后优化所述抛光配方的前馈(feedforward)和反馈回路中,对抛光的时间、抛光垫向下的力和速度、浆料流量和成分、调节时间、调节盘向下的力和速度,所述调节盘和晶片夹持器的振动速度进行调整。
根据本发明的至少一些的实施例,基于对所述晶片抛光工艺的知识,建立一个初始模式,如图3的流程图所示。在步骤300获得所述系统的初始条件(initial understanding),然后用此条件设计并运行步骤310的实验方案(DOE)。该实验方案设计用来建立两个变量或多个变量之间的关系,这些变量对期望控制的所述处理输出,例如晶片厚度,具有强烈的和可预测的影响。该DOE提供与工艺参数和工艺结果有关的数据,在步骤320中,将这些数据加载到先进的工艺控制系统。所述先进的工艺控制系统可以是一个控制器或者计算机,其用所述数据建立和更新所述模式。在步骤325中,用户可以确定包括输出目标和工艺说明(process specification)等的各种处理要求,其与DOE数据结合,在步骤330建立一个工作模式。
下面用图例描述模式建立过程。根据本发明的至少一些实施例,在所述CMP工艺中,以独立的步骤,定义一个模式结构(modelstructure),该模式结构模拟晶片材料去除速率(抛光)曲线。如上所述(图2),这些各自独立的步骤可以组合以产生一个均匀的最终晶片厚度;用在所述模式中的这些步骤还可以被定义为去除速率曲线的子集(subset);即一个步骤可能包含一族特征相似的去除速率曲线。对于每一族去除速率曲线而言,抛光参数是确定的,这些抛光参数可以改变,而且,它们对结果的影响被确定。在此模式中的示例性的抛光变量包括但不限于:抛光时间、抛光垫的向下的力和速度、浆料的流量和成分、调节时间、调节盘向下的力和速度,以及所述调节盘和所述晶片夹持器的扫过速度(sweep speed)。
在本发明的至少一些实施例中,所述模式基于所述晶片的分区,依赖于去除速率曲线。如图4所示,沿径向围绕晶片中心将晶片分成从401到405的不同的区域,这些分区的宽度和面积是变化的。所述模式未设定分区的数量,其可以基于所述抛光曲线(polishing profile)选择。例如图2所示的整个晶片被划分成7个分区,而图4所示的晶片被划分成5个分区。所述分区的大小和位置同样是可以改变的,并且它们可以根据某个抛光参数对所述晶片的那个分区的影响来选择。
晶片分区的数量,大小和位置可以根据所述晶片材料去除速率曲线的复杂程度来选择。至少在一些实施例中,在任何给定晶片分区,可期望所述曲线基本是一致的,特别是在一个分区中,将多个晶片厚度测量值平均以定义所述分区平均(region-averaged)厚度曲线的情形。因此,在边缘效应(edge effect)可能不断变化的晶片边缘,可以选择只包括远离中心区域的较窄分区,而接近所述晶片中心的区域,抛光效果可能比较微弱,这时可以选择较大的分区。由于CMP工具不能修正方位变差(azimuthal variation),因此定义分区以将所有方位变差通过平均消除。在所述晶片的一个分区内部进行的薄膜厚度测量值被平均以获得该分区的平均厚度。
为了获得DOE数据,需要根据进料测量值运行一个抛光步骤,例如,抛光前和抛光后的晶片的厚度测量值,并且可确定每个分区的处理参数值、去除速率曲线或与之对应的晶片厚度曲线。传统情况下,可以通过对参数值的范围以及所述抛光垫和调节盘的寿命进行一系列实验,凭经验获得数据。此种方法对所述抛光操作的处理特性未做任何假设,而且所述数据被拟合到合适的曲线中,以定义所述模式。这种方法需要消耗大量晶片,对于一个有4个步骤的工艺,至少需要30个晶片,而且该方法也很耗时(一般盘的寿命约为60小时)。
在本发明的至少一些实施例中,采用一种修改(modify)的试验方法获取DOE数据。此方法假设所述数据可以与一个线性曲线拟合,而且叠加(superposition)是有效的。叠加法假设,通过执行第一步一段时间,接着执行第二步一段时间,例如这两步是分别但又是前后相继进行的,这样做所获得的结果与将这两步一起执行所获得的结果相同。另外,该方法用一个已建立的模式将垫和盘的寿命与所述抛光操作(polishing performance)联系起来。这些假设可以显著减少恰当地为所述系统建立一个模式所需要的数据的数量(因此减少样品的数量)。在本发明的至少一些实施例中,需要晶片量不到10个,对于某些模式建立过程,甚至只需要6-8个试验晶片。仅作为例子,所述DOE可以包括5-7个抛光步骤,而所述抛光配方可以在几个晶片上实施,有时只在一个晶片上实施,或例如在5-8个晶片上实施。如果抛光步骤更多则抛光配方所需要消耗的晶片更多。
例如,对于一个如上面描述的感兴趣的抛光系统,可进行一系列实验以确定晶片材料去除速率曲线与抛光时间以及其它感兴趣的参数之间的关系。可以采用标准抛光工序(standard polishing procedure),而除了正在研究的所述参数,所有抛光垫和晶片条件保持不变。可以保持不变的示例性的抛光参数包括抛光垫尺寸、抛光垫组成、晶片成分、垫调节时间、所述抛光垫的旋转速度,以及所述晶片的旋转速度。在本发明的至少一些实施例中,正在研究的所述参数至少包括在所述抛光配方中的每一个所述抛光步骤的所述抛光时间和所述抛光向下的力(P)两者之一,该抛光向下的力如由护环压力限定的力。如在下面更详细分析所表明的,所述模式还可以包括另外(additional)的参数。
一旦从DOE运行中获得数据,就可以建立一个模式。一个具有5个抛光步骤的模式可以定义如下:
这里的AR’j是所述晶片分区j的材料的去除量;t1,t2,t3,t4和t5分别是抛光工艺步骤1,2,3,4和5的所述抛光时间;以及c1j,c2j,c3j,c4j,和c5j分别是在抛光步骤1,2,3,4和5中,分区j的去除速率。
在这个模式中可以包括另外的参数,并且该模式可以定义如下:
这里x1,x2,x3,x4和x5分别是抛光步骤1,2,3,4和5的所述另外的参数值;t1,t2,t3,t4和t5分别是抛光步骤1,2,3,4和5的抛光时间,并且ca1j提供了所述变量x在分区j中,在抛光步骤(a)对晶片去除的贡献;以及ca2j提供了在抛光步骤(a)中的抛光时间对晶片去除的贡献。因此,该模式允许包括无限多个处理参数。
在本发明的至少一些实施例中,所述模式还可以增加一个参数,即所述工具状态的影响。所述工具状态表示磨损、使用以及老化对所述工具的影响,并且包括由盘寿命和垫寿命表示的所述调节盘和抛光垫的所述条件,并且还包括空载时间。此泛函性(functionality)可用一个比例因子表示,考虑垫寿命和盘寿命的一个示例性的比例因子见方程3所示:
ARj=(1+kp·tp+kd·td+kpd·tp·td)·(AR’j/tp=0,td=0) (3)
这里tp和td项分别指抛光垫和盘的寿命,其以小时为单位;而kp,kd和kpd项是将抛光垫和盘寿命与去除速率联系起来的凭经验确定的系数,或等同于材料去除量;tp=0,td=0时的AR’j是在初始抛光条件下的材料去除量。
用如上面描述的一个模式,如果给定进料厚度、所述抛光垫和盘寿命,所述抛光步骤时间以及任何其它选择的参数值,可以计算晶片分区平均(region-averaged)的预测厚度以及最终晶片厚度,其中所述参数在些步骤参数被改变。
工艺模式的建立过程和优化是参照一个特定的抛光系统进行的。也就是说,影响晶片内均匀性(within wafer uniformity)的所述条件对正在被抛光的晶片的类型、抛光中使用的所述浆料以及所述抛光垫的组成等因素而言是特定的。一旦确定了晶片/浆料/抛光垫系统,所述系统就可以根据本发明所建立的模式特征化。在本发明的至少一些实施例中,设想为每一个抛光浆料/抛光垫晶片组合(即:对于一个给定的晶片类型,为可能用在生产中的每一个不同类型/品牌的抛光浆料和每一个不同类型/品牌的抛光垫组合)生成一个单独的模式(或者至少是一个复合模式(composite model)的一个补充(supplement))。
同样,在本发明的至少一些实施例中,设想一个晶片抛光模式可以在多个台板(platen)提供抛光(accommodate polishing),这些台板可以以并行的(parallel)或顺次的(serially)方式对晶片进行抛光。所述CMP抛光工艺通常包括多个台板,这些台板可以同时运转。典型地,在每个台板上去除欲去除材料总量的一部分。所述晶片被从一个台板传送到另一个台板,每一个台板都有独立的抛光配方,该抛光配方确定这些抛光步骤的时间以及其它处理参数,例如:在该台板上执行的这些抛光步骤的每一步骤的护环压力。
图6显示一个工艺模式,该模式反映执行相似的或不同的抛光步骤的多个台板对晶片厚度曲线的影响。在该模式的第一个阶段(phase)600,台板-1(620)的抛光配方610(这里为6个步骤)被确定(所述“第一抛光工艺”)。工艺输入数据为630,例如进料晶片在抛光前的加工分区的厚度,盘和垫寿命等参数被输入到所述模式中。抛光所述晶片,测量每个晶片分区的最终厚度640。在所述第一抛光工艺中获得的抛光后的分区厚度(region thickness)640被用作所述模式建立过程的第二阶段645的输入数据。在台板-2 660中实施第二抛光配方650,这一抛光配方可以与在台板-1 620中实施的第一抛光配方相同或不同。用在台板-2 660上的与所述垫和调节盘相关的垫和盘寿命因子655也可以包含在所述模式中。采集最终厚度测量值670,并用于所述模式的建立过程。这样,本发明的所述方法可以提供一个包括在多个台板上的多个抛光工艺的模式,这些台板在加工中处于不同的工具状态,并可以将台板特定的(platen-specific)反馈信息680和690分别提供给台板-1和台板-2。该模式适用广泛,可以适应各种高度复杂的抛光情况。
根据本发明的至少一些实施例,这里描述的建立初始模式可以用在本发明的至少一些实施例中,以实现所述抛光工艺从流程到流程的一致性,并为更新所述抛光配方提供一个反馈回路(参见图5)。简单地说,根据第一抛光配方,处理一个或多个晶片,然后对抛光后的晶片进行厚度测量以获得晶片厚度曲线,并且将此晶片厚度曲线与由所述模式计算的所述预测晶片厚度曲线进行比较。如果所述测量的晶片厚度曲线表明其偏离期望结果,那些偏差用于一个优化过程(optimization process)以更新所述抛光配方。然后,该更新的抛光配方被用在一个反馈回路以逐渐优化所述抛光配方,以便改善或保持晶片内薄膜厚度的均匀性。
根据图5的所述流程图,初始处理条件,例如,工具状态和晶片状态被确定,这将在步骤500中,提供所期望的晶片去除速率曲线。所述初始条件可以凭经验确定或通过用本发明的至少一些实施例的处理模式(processing model)来确定。如果采用一个处理模式,一个控制器(controller)可以在步骤510中,利用这个模式计算步骤时间和处理参数,使进入曲线变得平滑(polish an incoming profile),以获得具有期望厚度的目标平滑曲线(target flat profile)。在步骤520中,根据所述初始抛光配方,在CMP设备中抛光晶片。测量所述抛光后的晶片厚度,其与所述预测厚度的偏差在步骤530中被确定。在步骤540中,确定所述偏差是否超过已建立的公差范围。如果所述偏差在可接受范围之内,不改变所述抛光配方,并在步骤550中,所述控制器指示所述工具继续使用现有的抛光配方。如果所述偏差超出可接受限制(acceptable limit),需要在步骤560中设定新的目标参数,并将这些参数在步骤570反馈回所述控制器,在该控制器中,所述抛光配方根据一个更新的模式进行优化,所述更新的模式考虑了实际值与预测值的所述偏差。所述抛光步骤可以重复进行,并且可以进一步更新所述抛光配方。
按照本发明的至少一个实施例,所述CMP工艺的工艺控制允许对所述晶片整个表面的系列分区j的所述晶片去除速率进行优化。通过对所述晶片表面的所述分区j的单独优化,可以获得对该整个表面的更好的控制。因此,获得更好的晶片内厚度均匀性。
示例性优化方法,其可以用于确定一个更新的模式,以确定一个更新的抛光配方,解下面方程:
这里x是时间和与所述抛光配方对应的其它处理参数的一个矢量;g(x)是如上述方程1-3中所述CMP工艺的所述模式;ysp是所述期望的分区平均的晶片厚度的一个矢量;以及f(ysp,g(x))是用来补偿所述模式预测厚度g(x)与所述期望厚度ysp之间的所述偏差的某个函数。
因此,所述优化方法提出,所述模式不必100%修正与预测值的所述偏差。补偿函数(penalty function)可以用来反映测量和计算参数中的不确定性,或“抑制”工艺参数变化过快,变化程度过大带来的影响。例如,该模式可能过度补偿所述测量偏差,从而需要另一个调整来对这个过度补偿作出反应。这将引进一个优化过程,在所述优化条件实现以前,该过程是跳跃的(jump)并进行了数次迭代(iteration)。
根据这个优化方法,测量抛光后的晶片厚度,并且确定所述预测厚度和最终厚度之间的差别(difference)。随后,预测误差(error inprediction)或称偏移(bias)被线性地加入所述模式,从而使所述预测的最终厚度与所述实际厚度更加接近。这种偏移被加入每一个分区j,其由下面方程模拟:
FTj=ITj-ARj+bj (5)
这里FTj表示分区j的所述预测的最终厚度;ITj是分区j的所述进料厚度;ARj是对于给定的一套配方参数,从分区j去除的预测去除量;以及bj是由于从分区j去除的所述预测的去除量与实际去除量之间的差别所引起的偏移项(bais term)。在本发明的至少一些实施例中,带有偏移项的线性更新模式的过程是至少一些反馈控制的组成部分,其中的偏移项根据模式预测与实际测量之间的差别建立。
在本发明的至少一些实施例中,一个反馈控制用每个所述台板的所述平均工具状态,将这些台板融合进一个单一的模式(single model)。所述单一的模式将利用上述反馈方法,以某种预定的方式,在不同的台板上分配(apportion)所述偏移调整过程。
同样,在本发明的至少一些实施例中,一个反馈控制方案(feedbackcontrol scheme)根据所述最终厚度测量值将反馈信息分别分配给所有这些台板。为抛光工艺建立模式的一个方法见图6,该方法为不同的台板的抛光分别建立模式,并将其作为包含(factor into)在所述模式中。由于每个台板可以单独被对待(treat),所以,所述工具状态,例如所述垫和盘寿命,以及空载(idle)时间等都可以包括在所述模式中;而且对所述台板和抛光配方而言,反馈可能是特定的。当在每个台板实施的所述抛光配方不同的情况下,这个反馈控制方案尤其有用。由于其在保持在其它台板上的所述抛光配方不变的同时,允许在一个台板上改变所述处理配方,所以,这种为每一个台板分别建模的能力提供了更大的处理灵活性(processing flexibility)。
在本发明的至少一些实施例中,所述控制器将反馈分别应用到每一个承载头上(carrier head)。每个承载头以各自独特的方式工作,并且在更新所述抛光配方时,可以分别检查每个晶片夹持器的过去操作(past performance),并相应地调整所述更新的参数。
基于上述模式,用各种方法构造反馈和前馈控制算法,以用于上述控制工艺。用各种方法,例如递归参数估计法(recursive parameterestimation),这些算法可以用来优化参数。递归参数估计法用于诸如在接收到输入-输出数据的同时,进行在线模拟(model on line)的情形。递归参数估计法非常适合在线决策,诸如自适应控制(adaptive control)或自适应预测(adaptive prediction)。关于识别算法和原理(algorithm andtheory of identification)的更详细内容,见新泽西上鞍河(Upper SaddleRiver)的Prentice Hall出版公司,在1999年出版的,L·扬所著“系统识别-给使用者的理论”的第2版。
在本发明的至少一些实施例中,所述抛光配方可以用由所述模式建立的算法中所限定的不连续递增或步骤(discrete increment and step)进行更新。同样,在本发明的至少一些实施例中,也可以通过向适当的参数中插值(interpolation)确定所述更新的抛光配方。
实施所述前馈和反馈回路需要用一些附加设备,包括薄膜厚度测量(度量)工具,该厚度测量工具提供计算晶片材料去除速率所需要的厚度数据。该工具可以安装在所述抛光设备上以便进行在线(inline)、现场(in situ)测量,或者还可以设置在远离所述抛光设备的地方。该工具可以使用光学的,电学的,声学的或机械的测量方法。从Nanometrics(美国加利福尼亚州的米尔皮塔斯市)或Nova测量仪器公司(Nova Measuring Instruments位于美国亚利桑那州的菲尼克斯市)可以获得合适的厚度测量仪器。基于测量的薄膜厚度和计算的去除速率,利用本发明提供的模式和算法,可以用计算机来计算最佳垫调节配方。可以从美国加利福尼亚州的应用材料有限公司(Applied MaterialsInc.)获得合适的集成控制器(integrated controller)和抛光设备(具有iAPC的Mirra或具有iAPC的Mirra Mesa)。
利用在此讨论的概念可以抛光的示例性的半导体晶片,包括,但不限于由硅、钨、铝、铜、BPSG、USG、热氧化物、硅相关薄膜、以及低k值电介质及其混合物制成的晶片。
本发明的方法可以用许多不同类型的常规CMP抛光垫实施。在本技术领域,有许多一般由聚氨脂(urethane)或其它聚合物制成的抛光垫。示例性的抛光垫包括EpicTM抛光垫(伊利诺斯州奥罗拉市的Cabot微电子公司生产)和RodelIC1000、IC1010、IC1400抛光垫(特拉华州纽瓦克的Rodel公司生产),OXP系列抛光垫(Sycamore Pad),ThomasWest Pad 711、813、815、815-Ultra、817、826、828以及828-E1(ThomasWest)。
此外,本发明的方法可以用许多不同类型的浆料。本技术领域中有许多CMP浆料,一般将其制成用于抛光半导体晶片中的某类金属。示例性的浆料包括Semi-Sperse(可用的有Semi-Sperse12、Semi-Sperse25、Semi-SperseD7000、Semi-SperseD7100、Semi-SperseD7300、Semi-SperseP1000、Semi-SperseW2000及Semi-SperseW2585)(伊利诺斯州奥罗拉市的Cabot微电子公司)和RodelILD1300、Klebesol系列、Elexsol、MSW1500、MSW2000系列、CUS系列以及PTS(Rodel)。
本发明的许多方式可以用计算机控制,其可以是许多控制器/计算机统一体(computor entity),和/或用多种控制器/计算统一体包括图7所示的计算机来控制。参见图7,总线756用作连接系统711的其它单元的主要信息高速路(main information highway)。CPU758是该系统的中央处理单元,执行计算和逻辑操作,所述计算和逻辑操作是实施本发明实施例的所述工艺以及其它程序所需要的。只读存储器(ROM)760和随机存储器(RAM)762构成该系统的主存储器。磁盘控制器(diskcontroller)764连接一个或多个磁盘驱动器到该系统总线756。这些磁盘驱动器是,例如软盘驱动器770,或CD ROM或DVD(数字视频盘)驱动器766,或内部或外部硬盘驱动器768。这些不同的磁盘驱动器和磁盘控制器是任选设备。
显示器接口772连接显示器748,并使信息从所述总线756显示在显示器748上。显示器748可以用于显示图形化用户界面。利用例如通信端口774,可实现与上面描述的诸如该系统的其它单元的外部设备之间的通信。光纤和/或电缆和/或导体和/或光通信(例如,红外等)和/或无线通信(例如,射频RF等)可以用作所述外部设备和通信端口774之间的传输介质(transport medium)。外围接口(peripheral interface)754连接主板750和鼠标752,使输入数据被传送到总线756上,除这些单元之外,系统711也可选择性地包括红外发射器和/或红外接收器。当该计算机系统与一个或多个经由红外信号传输发射/接收数据的处理单元/站一起使用时,可选择使用红外发射器。代替使用红外发射器或红外接收器,该计算机系统也可以选择使用低功率无线电发射器780和/或低功率无线接收器782。该低功率无线发射器发射信号被生产工艺单元(production process component)接收,并通过该低功率无线接收器接收来自这些单元的信号。该低功率无线发射器和/或接收器是工业标准设备。
虽然图7显示的系统711说明只有一个处理器,一个硬盘驱动器和一个本地存储器,但是系统711可选择性地适合配有任意多个处理器或存储设备或处理器或存储设备的组合。例如,系统711可以用任一个符合本发明实施例的原理的合适的处理系统取代,或可以与任一根据本发明实施例的原理的合适的处理系统结合,这些系统包括复杂的计算器,手持电脑,便携式电脑/笔记本电脑,微型计算机,大型机和超级计算机,以及它们构成的处理系统网络(processing systemnetwork)的组合。
图8是示例性的计算机可读存储介质884的图示说明,该存储介质可用于存储计算机可读的代码或指令。作为例子,介质884可以和如图7显示的磁盘驱动器一起使用。典型地,诸如软盘,或CD ROM,或数字视频盘的存储介质将包含,例如,用于单字节语言的多字节locale和用于控制上述系统以使该计算机能执行在此所描述的功能的程序信息。作为选择,图7中的ROM 760和/或RAM 762也可以用于存储该程序信息,该信息用于给中央处理单元758下指令以执行与即时处理相关联的操作。用于存储信息的合适的计算机可读介质的其它例子包括磁的,电的,或光(包括全息)存储器以及它们的组合等。另外,本发明的至少一些实施例设想所述介质可以是传输形式(例如,数字或传播信号)。
总之,应当强调,本发明实施例的多个单元可以在硬件,软件及其组合件中实施。在这样的实施例中,能在硬件和/或软件中实施多个单元和步骤以执行本发明的所述功能。在本发明的这样的实施例中,可以采用任一当前能得到的或未来开发的计算机软件语言和/或硬件单元。例如,利用C,C++,或适合正在使用的处理器的任合汇编语言都能执行上面所述的至少一些功能性。其也可以用编译环境(interpretiveenvironment)编写,例如Java,并且被传送到多个目的地,到达不同的用户。
虽然在此已经给出并详细描述了具体表现本发明思想的多个实施例,但是,本领域的技术人员可以容易地想出许多其它的具体表现这些思想的各种实施例。
Claims (32)
1.一种在抛光操作中产生均匀晶片厚度曲线的方法,该方法包括:
(a)提供一个晶片抛光模式,该模式在晶片上定义多个分区,并且在抛光步骤中,确定这些分区的每一个分区的晶片材料去除速率;以及
(b)用一种为每个分区生成目标厚度曲线的抛光配方,抛光晶片。
2.一种在抛光操作中控制晶片表面非均匀性的方法,该方法包括:
(a)提供一个晶片抛光模式,该模式在晶片上定义多个分区,并且在抛光工艺的抛光步骤中,确定这些分区的每一个分区的晶片材料去除速率,其中所述抛光工艺包括多个抛光步骤;
(b)根据进料晶片厚度曲线,用第一抛光配方,抛光晶片;
(c)确定步骤(b)抛光后的晶片的晶片厚度曲线;以及
(d)根据步骤(c)得到的所述晶片厚度曲线和步骤(a)的所述模式,计算更新的抛光配方,以保持目标晶片厚度曲线。
3.如权利要求2所述的方法,其中所述第一抛光配方根据步骤(a)的所述模式建立,以获得所述目标晶片厚度曲线。
4.如权利要求2所述的方法,其中所述第一抛光配方凭经验确定。
5.如权利要求1或2所述的方法,其中步骤(a)的所述模式中的所述多个分区包括从所述晶片中心点沿径向,向外延伸的分区。
6.如权利要求5所述的方法,其中所述模式包括4个或更多个分区。
7.如权利要求1所述的方法,其中步骤(b)的所述抛光包括在多个抛光台抛光所述晶片。
8.如权利要求7所述的方法,其中所述抛光步骤在3个抛光台实施。
9.如权利要求7所述的方法,其中所述抛光配方至少在两个抛光台上是相同的。
10.如权利要求7所述的方法,其中所述抛光配方至少在两个抛光台上是不同的。
11.如权利要求7所述的方法,其中步骤(c)的所述计算更新的抛光配方包括计算所述多个抛光台的每一个的更新的抛光配方。
12.如权利要求11所述的方法,其中所述多个抛光台的每一个的所述更新的抛光配方反映单个抛光台的工具状态。
13.如权利要求9或10所述的方法,其中步骤(b)的所述抛光可以在多个抛光台上实施;并且,其中每一个后续抛光台的所述晶片厚度曲线由前面的抛光台的预测来提供。
14.如权利要求1或2所述的方法,其中提供一个模式的所述步骤包括:
(e)在一个或多个晶片上定义的多个分区的每一个分区,测量抛光前晶片厚度;
(f)抛光所述一个或多个晶片,其中所述抛光包括在多个抛光步骤中抛光所述一个或多个晶片;
(g)在步骤(g)的每个所述抛光步骤完成后,在所述一个或多个晶片的所述多个分区的每一个分区,测量所述一个或多个晶片的所述晶片材料去除速率;
(h)提供一个模式,该模式定义工具状态对抛光效果的影响;以及
(i)将每个或所有这些分区的所述抛光前和抛光后的晶片厚度记录在一个可记录的介质上。
15.如权利要求14所述的方法,还包括:
将数据拟合到一个线性或非线性曲线中,所述曲线建立了所述晶片的分区的所述晶片材料去除速率与感兴趣的抛光参数之间的关系。
16.如权利要求14所述的方法,其中所述抛光参数包括抛光时间。
17.如权利要求16所述的方法,其中所述抛光参数还包括选自由包括抛光时间,抛光垫向下的力和速度,浆料流量和成分,调节时间,调节盘向下的力和速度,所述调节盘和所述晶片夹持器的振动速度所组成的参数组中的一个参数。
18.如权利要求1或2所述的方法,其中步骤(a)的所述模式中的一个分区j(AR’j)的所述晶片去除根据下面方程确定:
这里x1,x2,x3,x4和x5分别是抛光步骤1,2,3,4和5的另外的参数值;t1,t2,t3,t4和t5分别是抛光步骤1,2,3,4和5的所述抛光时间,并且ca1j提供了所述变量x在分区j,在抛光步骤(a)中对晶片去除的贡献;以及ca2j提供了在抛光步骤(a)中的抛光时间对晶片去除的贡献。
19.如权利要求18所述的方法,其中所述晶片材料去除速率曲线通过用下面的比例因子标度所述曲线来反映所述工具状态:
(l+kp·tp+kd·td+kpd·tp·td)
这里tp和td项分别指抛光垫和盘的寿命,其以小时为单位;而kp,Kd和kpd是将抛光垫和盘寿命与去除速率联系起来的凭经验确定的系数。
20.如权利要求2所述的方法,其中更新的抛光配方通过解下面的方程获得:
这里x是时间和与所述抛光配方对应的其它处理参数的一个矢量;g(x)是所述抛光工艺的所述模式;ysp是所述期望的平均分区的晶片厚度的一个矢量;以及f(ysp,g(x))是用来补偿所述模式预测厚度g(x)与所述期望厚度ysp之间的所述偏差的一个补偿函数。
21.一种确定晶片厚度曲线的模式的方法,该方法包括:
(a)在一个或多个晶片上定义的多个加工分区的每一个分区,测量抛光前的晶片厚度;
(b)抛光所述一个或多个晶片,其中所述抛光包括在多个抛光步骤中抛光所述一个或多个晶片;
(c)在步骤(b)的每一个所述抛光步骤之后,在该多个分区中的每一个分区,测量所述一个或多个晶片的所述晶片材料去除速率;
(d)提供一个模式,该模式定义工具状态对抛光效果的影响;以及
(e)将每个或所有这些分区的所述抛光前的和抛光后的晶片厚度记录在一个可记录的介质上。
22.如权利要求21所述的方法,还包括:
将数据拟合到一个线性或非线性曲线中,所述曲线建立了所述晶片的分区的所述材料去除速率与感兴趣的抛光参数之间的关系。
23.如权利要求22所述的方法,其中所述抛光参数包括抛光时间。
24.如权利要求23所述的方法,其中所述抛光参数包括选自由包括抛光时间,抛光垫向下的力和速度,浆料流量和成分,调节时间,调节盘向下的力和速度,所述调节盘和所述晶片夹持器的振动速度所组成的参数组中的一个参数。
25.如权利要求21所述的方法,其中步骤(a)的所述模式中的一个分区j(AR’j)的所述晶片材料去除根据下面方程确定:
这里x1,x2,x3,x4和x5分别是抛光步骤1,2,3,4和5的另外的参数值;t1,t2,t3,t4和t5分别是抛光步骤1,2,3,4和5的所述抛光时间,并且ca1j提供了所述变量x在分区j,在抛光步骤(a)中对晶片去除的贡献;以及ca2j提供了在抛光步骤(a)中的抛光时间对晶片去除的贡献。
26.如权利要求21所述的方法,其中所述晶片材料去除速率曲线通过用下面的比例因子标度所述曲线来反映所述工具状态:
(l+kp·tp+kd·td+kpd·tp·td)
这里tp和td项分别是指抛光垫和盘的寿命,其以小时为单位;而kp,kd和kpd是将抛光垫和盘寿命与去除速率联系起来的凭经验确定的系数。
27.如权利要求22所述的方法,其中一个所述模式用少于10个晶片的试验来确定。
28.一种调节抛光垫的设备,所述抛光垫用于平面化基片,所述设备包括:
一个运载组件,该运载组件具有多个固定臂,以将晶片固定在多个抛光垫的多个平整表面之上;
能控制所述抛光工艺的操作参数的控制装置;以及
可与所述控制装置耦合的一种控制器,所述控制器运转这些控制装置,将所述抛光工艺的所述操作参数作为晶片厚度曲线模式的一个函数进行调整,所述模式包括:
定义一个抛光模式,该抛光模式在晶片上定义了多个分区,并且在抛光工艺的抛光步骤中,确定这些分区的每一个分区的晶片材料去除速率,其中所述抛光工艺包括多个抛光步骤。
29.如权利要求28所述的设备,其中所述模式在所述晶片材料去除速率模式中的一个分区j(AR’j)的所述晶片去除根据下面方程确定:
这里x1,x2,x3,x4和x5分别是抛光步骤1,2,3,4和5的另外的参数值;t1,t2,t3,t4和t5分别是抛光步骤1,2,3,4和5的所述抛光时间,并且ca1j提供了所述变量x在分区j,在抛光步骤(a)中对晶片去除的贡献;以及ca2j提供了在抛光步骤(a)中的抛光时间对晶片去除的贡献。
30.一种计算机可读的介质包括由计算机执行的指令,这些指令包括用于该化学机械抛光工艺的一个计算机-执行的软件应用程序,执行所述工艺的这些指令包括:
(a)从化学机械抛光工具中,接收与在所述化学机械抛光过程中处理的至少一个晶片的所述晶片去除速率相关的数据;以及
(b)从步骤(a)的所述数据,计算更新的抛光配方,其中所述更新的抛光配方通过确定晶片材料去除速率模式的输出与步骤(a)的所述数据之间的差别来计算。
31.如权利要求28所述的介质,其中晶片材料去除速率的所述模式,在晶片上定义了多个分区,并且在抛光工艺的抛光步骤中,确定这些分区的每一个分区的晶片材料去除速率,其中所述抛光工艺包括多个抛光步骤。
32.如权利要求30所述的介质,其中在所述晶片材料去除速率模式中的一个分区j(AR’j)的所述晶片去除根据下面方程确定:
这里x1,x2,x3,x4和x5分别是抛光步骤1,2,3,4和5的另外的参数值;t1,t2,t3,t4和t5分别是抛光步骤1,2,3,4和5的所述抛光时间,并且ca1j提供了所述变量x在分区j,在抛光步骤(a)中对晶片去除的贡献;以及ca2j提供了在抛光步骤(a)中的抛光时间对晶片去除的贡献。
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Also Published As
Publication number | Publication date |
---|---|
JP4799817B2 (ja) | 2011-10-26 |
EP1399962A1 (en) | 2004-03-24 |
WO2002103777A1 (en) | 2002-12-27 |
KR20040010755A (ko) | 2004-01-31 |
US20070102116A1 (en) | 2007-05-10 |
US20020197745A1 (en) | 2002-12-26 |
US8070909B2 (en) | 2011-12-06 |
CN1292464C (zh) | 2006-12-27 |
KR100906133B1 (ko) | 2009-07-07 |
US20120053721A1 (en) | 2012-03-01 |
US7160739B2 (en) | 2007-01-09 |
JP2005520317A (ja) | 2005-07-07 |
US8694145B2 (en) | 2014-04-08 |
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