CN1505105A - 半导体器件及其制造方法、电路板、电光装置及电子仪器 - Google Patents

半导体器件及其制造方法、电路板、电光装置及电子仪器 Download PDF

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CN1505105A
CN1505105A CNA200310118053A CN200310118053A CN1505105A CN 1505105 A CN1505105 A CN 1505105A CN A200310118053 A CNA200310118053 A CN A200310118053A CN 200310118053 A CN200310118053 A CN 200310118053A CN 1505105 A CN1505105 A CN 1505105A
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conductive layer
semiconductor device
electrode
resin bed
manufacture method
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CN1291456C (zh
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伊东春树
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

本发明提供一种半导体器件及其制造方法、电路板、电光装置及电子仪器。该半导体器件具有电极、由树脂形成并且比电极还突出的多个突起体(4)和电连接在电极上并且到达突起体(4)的上面的导电层(5)。该制造方法包括：在半导体器件(1)上避开电极形成树脂层(4a)的工序；在电极上及树脂层(4a)上，按照突起体(4)对导电层(5)构图的工序；以构图的导电层(5)为掩模，除去位于导电层(5)之间的树脂层(4a)，形成突起体(4)的工序。

Description

半导体器件及其制造方法、电路板、电光装置及电子仪器
技术领域
本发明涉及半导体器件及其制造方法、电路板、电光装置及电子仪器。
背景技术
以往，在驱动IC等半导体器件的安装中常常使用所谓的Au凸台。在该Au凸台的形成时，在半导体元件上溅射TiW/Au等的晶粒层，对抗蚀剂构图后，进行高度20μm左右的电场镀金。可是，伴随着所述驱动IC的电极的间隔变窄，预测到高纵横比的抗蚀剂的形成、或者晶粒(seed)层的蚀刻等稳定的凸台的形成变得困难。
此外，近年，与窄间隔化对应的廉价的无电解Ni凸台的开发也在进展，该凸台比Au凸台硬，所以特别是在显示体面板上直接安装驱动IC的COG(Chip On Glass)，从连接可靠性的角度讲，有时不能满足要求。
因此，在专利文献1中描述了在离开电极的位置设置树脂制的突起部，通过覆盖并连接突起部的连接图案作为导电层设置，形成突起电极的技术。根据该技术，容易形成小直径的突起电极，有助于半导体芯片尺寸的缩小化，通过树脂制的突起的弹性，吸收安装时的应力，有助于安装质量的稳定化。
[专利文献1]
特开平2-272737号公报
可是，在上述的以往技术中，存在以下的问题。
在形成突起电极时，在半导体元件上涂敷树脂后，必须进行构图，接着通过溅射形成导电层，进一步对该导电层构图。在以往的构图中，例如通过光刻来取得所需形状，所以有必要为各蚀刻工序准备与应该形成的形状对应的光掩模，导致制造成本的上升。此外，由于必须对树脂层和导电层双方进行微细的构图，所以存在着制造工序繁杂的问题。
此外，当使用光刻形成多个突起时，突起间的间隙有可能形成圆锥状，这时，在突起的基部，间隙减小，不利于实现突起的窄间隔化。
发明内容
本发明是鉴于以上各点而提出的，其目的在于：提供能简化制造工序，能对应于窄间隔化的半导体器件及其制造方法和电路板以及电光装置、电子仪器。
为了实现所述目的，本发明采用以下的结构。
本发明的半导体器件的制造方法中，该半导体器件具有电极、比所述电极还突出并且通过树脂以规定的图案形成的多个突起体、电连接在所述电极上并且到达所述突起体上表面的导电层，其特征在于：包括：在所述半导体器件上避开所述电极形成所述树脂层的工序；在所述电极上和所述树脂层上，按照所述突起体的所述规定图案对所述导电层构图的工序；以构图的所述导电层为掩模，除去位于所述导电层之间的树脂层，形成所述突起体的工序。
因此，在本发明中，当通过蚀刻除去导电层间的树脂层，作为多个突起体而构图时，把导电层作为掩模利用，所以不需要对于树脂层的微细构图，能简化制造工序。此外，在除去该树脂层时，希望用等离子体加工进行。这时，几乎垂直形成有可能变为圆锥体的突起体的侧面，所以相邻的突起体的基部间的间隙不减小。因此，对于多个突起体的配置，能实现窄间隔化。
作为导电层，能采用溅射或电镀形成的结构。当用溅射形成时，通过使用抗蚀剂对导电层构图后的等离子体加工，也能同时除去导电层上残留的抗蚀剂，所以没必要另外设置除去抗蚀剂的工序。此外，当用电镀形成时，能使导电层变厚，能防止断线等。
作为形成导电层的工序，在形成树脂层之前，形成覆盖电极的第一导电层的工序；形成连接树脂层的表面和第一导电层的第二导电层的工序。这时，通过第一导电层覆盖电极，所以象使用Al电极那样，能防止电极腐蚀。作为第一导电层，希望用无电解镀镍形成。此外，也能用溅射形成第一导电层和第二导电层。这时，能把第一导电层延伸到半导体器件的有源区域，所以对于突起体的形成，能增加自由度。
而本发明的半导体器件的特征在于：使用所述的半导体器件制造方法制造。此外，本发明的电路板的特征在于：安装了所述半导体器件。据，在本发明中，能实现窄间隔安装，能实现高功能的半导体器件和电路板。
而且，本发明的电光装置的特征在于：具有电光面板和与所述电光面板电连接的所述半导体器件。此外，本发明的电子仪器的特征在于：具有所述电光装置。
根据本发明，能实现窄间隔安装，能实现以窄间隔、高密度安装了半导体器件的高功能的电光装置和电子仪器。
附图说明
图1是本发明的半导体器件的局部平面图。
图2是图1的A-A线剖视图。
图3是图1的B-B线剖视图。
图4(a)～(d)是表示突起体的制造工序的图。
图5是表示半导体器件的其他形态的局部平面图。
图6是表示本发明的液晶显示装置的概略结构的立体图。
图7是表示COG式液晶显示装置的一例的分解立体图。
图8是本发明的有机EL显示面板的剖视图。
图9是表示本发明的电子仪器的外观图。
图10是表示作为其它电子仪器的移动电话机的立体图。
图中：1-半导体元件(半导体器件)；2-Al电极(电极)；4-突起体；4a-树脂层；5-导电层(金属膜)；30-有机EL面板(电光面板)；60-个人计算机(电子仪器)；62、74-液晶显示装置(电光装置)；70-移动电话机(电子仪器)；100-电路板；101-半导体器件。
具体实施方式
下面，参照图1～图10说明本发明的半导体器件及其制造方法和电路板以及电光装置、电子仪器的实施例。这里，首先在说明本发明的特征的工序之前，说明本发明的制造方法中使用的半导体器件的构造以及制造方法的一例。
图1是表示作为本发明的半导体器件的半导体元件的局部平面图，图2是表示图1的A-A线剖视图，图3是图1中的B-B线剖视图。此外，作为本实施例的半导体元件，可以是呈形成有多个半导体芯片的状态的硅片等半导体基板，也可以是各半导体芯片。此外，当为半导体芯片时，一般是长方体(包含正方体)，但是该形状并未限定，也可以是球状。
图1中，符号1是半导体元件(半导体器件)，符号2是为了在半导体元件1上进行电信号的输入输出而设置的Al电极，符号3是为了保护半导体元件1的有源面而设置的钝化膜，符号4是与由树脂形成的Al电极2同一间隔配置的突起体，符号5是覆盖Al电极2和突起体4的表面(顶面)而形成的导电层(金属膜)。
Al电极2例如通过溅射形成，通过使用抗蚀剂等构图为规定的形状(例如矩形)而形成。此外，在本实施例中，以用Al电极形成电极时的情形为例进行说明，但是例如也可以是依次层叠Ti(钛)层、TiN层(氮化钛)层、AlCu(铝/铜)层、TiN层(帽层)的构造。并且，电极并不局限于所述结构，按照必要的电特性、物理特性、化学特性，可以适当变更。
此外，Al电极2以规定的间隔在半导体元件1的端缘附近形成多个。而且，覆盖Al电极2的周边部形成钝化膜3。该钝化膜3能通过SiO2(氧化硅)、SiN(氮化硅)、聚酰亚胺树脂等形成。此外，钝化膜3的厚度例如为1μm左右。
突起体4在Al电极2的有源面侧以突出于Al电极2的高度(例如为1～30μm的厚度)，以与Al电极2同一间隔，在图1中的左右方向排列形成多列。作为突起体4，能通过聚酰亚胺树脂、硅变性聚酰亚胺树脂、环氧树脂、硅变性环氧树脂、苯环丁烯(BCB；BenzoCycloButene)、聚苯并唑(PBO；PolyBenzOxazole)等树脂形成。
作为导电层5，能层叠Au、TiW、Cu、Cr、Ni、Ti、W、NiV、Al等金属或这些金属中的几种而形成。此外，导电层5(在层叠构造的情况下，至少一层)希望由比Al电极2的抗腐蚀性高的材料例如Cu、TiW、Cr形成。由此，可阻止Al电极2的腐蚀，防止电接触不良的发生。
下面，参照图4(a)～(d)依次说明在所述结构的半导体元件1上形成突起体4的工序。此外，图4是在排列方向上的相邻的突起体4、4的位置形成截面的图(图1中，C-C剖视图)，图中，单点划线表示应该形成各突起体4的位置。
此外，虽然省略图示，但是通过用旋转镀膜法、浸渍法、喷射镀膜法等方法在钝化膜3上的全面上涂敷抗蚀剂后，使用形成了规定的图案的掩模，进行曝光处理和显影处理，把抗蚀剂构图为规定形状，蚀刻覆盖Al电极2的钝化膜3一部分，形成开口部，对钝化膜3构图。此外，在蚀刻中最好使用干蚀刻。
干蚀刻可以是反应性离子蚀刻(RIE：Reactive Ion Etching)。此外，作为蚀刻，也可以应用湿蚀刻。
如图4(a)所示，通过在形成在半导体元件1上的钝化膜3上涂敷构成突起体4的所述树脂(例如聚酰亚胺)，形成树脂层4a。这时，树脂层4a如图1和图3所示，在避开Al电极2的开口部正上方的范围L的整个面上构图形成(在本实施例中，使Al电极2与树脂层4a完全分开)。
接着，如图4(b)所示，在包含Al电极2和树脂层4a的表面(顶面)的半导体元件1的表面全面上形成导电层5(例如TiW/Au)。作为导电层5的形成方法，能采用溅射和电镀处理。此外，当实施电镀时，在该工序中形成的层成为晶粒层。
接着，通过旋转镀膜法、浸渍法、喷射镀膜法等方法在导电层5上全面涂敷抗蚀剂后，使用形成了与导电层5平面形状(平面图案)对应的开口的掩模，进行曝光处理和显影处理，把抗蚀剂构图为规定形状。然后，进行蚀刻处理，如图4(c)所示，在与突起体对应的位置分别构图形成导电层5。此外，当在导电层5的形成中使用电镀法时，对于把抗蚀剂构图的晶粒层，进行电镀处理(例如镀金，厚度0.5μm～10μm)。然后，设置剥离(导电层5上)残留的抗蚀剂的工序，但是如果导电层5只是由溅射形成的膜，则不需要该剥离工序。此外，在用溅射形成的膜上，再用电镀处理形成膜，也能用这些层叠的多个膜形成导电层5。这时，依次进行溅射、抗蚀剂的涂敷、电镀、抗蚀剂的剥离、蚀刻等工序。
接着，通过蚀刻除去树脂层4a中位于导电层5之间露出的树脂层。作为蚀刻方法，希望是等离子体处理(等离子体加工)，例如，通过O2等离子体除去露出的树脂层4a。这时，因为导电层5作为掩模起作用，所以不另外使用光掩模等部件，能除去导电层5之间的树脂。通过该等离子体蚀刻，如图4(d)所示，除去半导体元件1上的不要的树脂，与Al电极2连接的导电层5形成表面(顶面)上制膜的突起体5(突起电极)。
这里，当用光刻除去树脂层4a时，相邻的突起体4、4之间形成圆锥状的程度大，与导电层5间的距离相比，由于基部的间隙变窄，实际上突起体4的窄间隔化是困难的，但是通过实施等离子体蚀刻，形成侧面几乎垂直的突起体4，所以能与突起体4的窄间隔化对应。此外，如果导电层5是只通过溅射形成的膜，则通过等离子体蚀刻，残留在导电层5上的抗蚀剂与树脂层4a同时被除去。
如上所述，在本实施例的半导体器件及其制造方法中，把构图的导电层5作为掩模，除去树脂层4a，形成突起体4，所以能容易形成突起体4，并且没必要准备用于对突起体4沟图的微细图案的掩模，能有助于防止制造成本的上升。此外，在本实施例中，通过等离子体蚀刻实施与突起体的形成有关的树脂层的除去，所以能把突起体的侧面几乎形成垂直面，能对应于突起体4的进一步的窄间隔化。并且，在本实施例中，如果导电层5只是由溅射形成的膜，则能用等离子体处理同时除去在导电层的形成中残留的抗蚀剂，所以没必要另外设置剥离工序，能有助于制造效率的提高。
下面，说明本发明的半导体器件制造方法的其他实施例。
在所述实施例中，导电层采用了Al电极2和突起体4的表面直接连接的结构，但是也能采用间接连接的结构。具体而言，用所述制造方法形成树脂层4a之前，首先通过覆盖Al电极2形成第一导电层，避开Al电极2的正上方形成树脂层。作为形成第一导电层的方法，列举出无电解镀镍处理、溅射等。
当用无电解镀镍处理形成第一导电层时，首先，使用碱性的锌溶液，对Al电极2上实施锌酸盐处理。即，当在Al电极2上设置碱性锌溶液时，可以把半导体元件1浸渍在溶液中。此外，也可以在使锌在Al电极2的表面析出时，把Al电极2浸渍在碱性锌溶液中后，通过硝酸把置换的锌溶解，再浸渍到碱性锌溶液中。接着，在把表面置换为锌的Al电极2上设置无电解镀镍液，经过锌和镍的置换反应，在Al电极2上形成镍层。把半导体元件1浸渍在无电解镀镍液中进行该工序。然后，在形成了上述的树脂层4a后，形成第二导电层。构图形成该第二导电层，使突起体的表面与第一导电层连接。此后的基于等离子体处理的树脂层4a的除去与上述实施例同样。
在本实施例中，Al电极2由第一导电层完全覆盖，所以能防止腐蚀，并且不需要通过锌酸盐处理有选择地在Al部上设置Ni的抗蚀剂构图。
而当用溅射形成第一导电层时，与所述实施例同样，在形成溅射膜后，实施抗蚀剂的构图，通过进行蚀刻处理、抗蚀剂剥离，能获得具有所需形状的第一导电层(也可以实施电镀处理)。此后的工序与实施无电解电镀处理时同样。
在本实施例中，与无电解电镀处理同样，能防止Al腐蚀，并且能把第一导电层延伸到半导体元件1的有源面区域，所以配置形成突起体4时的自由度进一步增加。
此外，在所述实施例中，采用了突起体延伸到半导体元件1的有源面区域的结构，但是并不局限于此，如图5所示，也可以是与小开口的Al电极2对应，只把突起体4延伸到半导体元件1的有源面区域1F的外侧端缘附近的结构。
图6是表示作为本发明一个实施例的电光装置的液晶显示装置概略结构的立体图。图6所示的液晶显示装置包括：作为电光面板的彩色液晶面板51；具有由所述半导体器件的制造方法制造的半导体器件101，并且连接在液晶面板51上的COF(Chip On Film)式的电路板100。此外，按照必要，在液晶面板51上设置背光等照明装置、其他附带设备。
此外，本发明除了所述COF以外，也能应用于在显示体面板(液晶面板)上直接安装驱动IC的COG(Chip On Glass)式的电光装置。图7表示COG式液晶显示装置的一个例子。
在本图中，作为电光装置的液晶显示装置50具有：由金属板构成的框状屏蔽箱68、作为电光面板的液晶面板52、液晶驱动用LSI58、通过COG安装方式把液晶面板52和液晶驱动用LSI58的有源面上形成的凸台彼此电连接的未图示的ACF(Anisotropic Conductive Film：各向异性导电膜)、用于保持全体强度的保持部件172。
把在一方的面上设置第一透明电极层的由0.7mm厚的钠钙玻璃构成的第一基板53、一方的面上设置第二透明电极层的由0.7mm厚的钠钙玻璃构成的第二基板54粘贴，使第一透明电极层和第二透明电极层相对，在这些基板间密封液晶组成物，构成该液晶面板52。使用COG或ACF，把液晶驱动用LSI58直接电连接在一方的基板54上。这样，形成COG型的液晶面板52。该液晶驱动用LSI58由所述半导体器件制造方法制造。
此外，作为电光装置，除了液晶显示装置以外，也能使用有机EL显示装置。图8是设置在作为电光装置的有机EL显示装置上的有机EL面板的剖视图。在基板31上把TFT(Thin Film Transistor)32形成矩阵状，在其上形成多个层叠体33，概略构成有机EL面板(电光面板)30。TFT32形成源电极、栅电极、漏电极，栅电极和源电极例如与图1所示的导电层5的任意一个电连接。所述层叠体33包含阳极层34、空穴注入层35、发光层36和阴极层37。所述阳极层34与TFT32的漏电极连接，当TFT32变为导通状态时，电流通过TFT32的源电极和漏电极提供给阳极层34。
在以上结构的有机EL面板30中，从阳极层34通过空穴注入层35注入发光层36中的空穴(Hole)和从阴极层37注入发光层36中的电子在发光层36内再耦合发出的光从基板31一侧射出。
以上，说明了本发明的实施例的半导体器件的制造方法和电路板以及电光装置，下面，说明搭载了本实施例的电光装置的电子仪器。通过在框体内安装作为以上说明的电光装置的液晶显示装置、具有CPU(中央处理单元)的主板、键盘、硬盘等电子部件，制造例如图9所示的个人计算机60(电子仪器)。
图9是表示作为本发明一个实施例的电子仪器的笔记本型计算机的外观图。在图9中，61是框体，62是液晶显示装置(电光装置)，63是键盘。此外，在图9中，表示具有液晶显示装置的笔记本型计算机，但是代替液晶显示装置，也可以具有有机EL显示装置。图10是表示作为其他电子仪器的液晶显示装置(电光装置)的立体图。图10所示的移动电话机70具有天线71、受话器72、送话器73、液晶显示装置74、操作按钮75。此外，在图10所示的移动电话机中，代替液晶显示装置74，也可以具有有机EL显示装置。
此外，在所述实施例中，作为电子仪器，以笔记本型计算机和移动电话机为例进行说明，但是并不局限于这些，能应用于液晶投影仪、对应于多媒体的个人计算机(PC)和工程工作站(EWS)、寻呼机、字处理器、电视、取录器型或监视直视型摄像机、电子记事本、台式电子计算机、汽车导航系统装置、POS终端、具有触摸屏的装置等电子仪器。
以上，说明了本发明实施例的半导体器件及其制造方法和电光装置、电子仪器，但是本发明并不限于此，在本发明的范围内，能自由变更。
例如，把上述的实施例的“半导体芯片”和“半导体元件”置换为“电子元件”，能制造电子零件。作为使用这样的电子元件制造的电子零件，有光元件、电阻器、电容器、线圈、振荡器、滤波器、温度传感器、电热调节器、可变电阻、电位器、保险丝。

Claims (13)

1.一种半导体器件的制造方法，用于制造具有电极、比所述电极还突出并且由树脂按规定的图案而形成的多个突起体、电连接在所述电极上并且到达所述突起体上表面的导电层的半导体器件，
其特征在于：包括：
在所述半导体器件上避开所述电极形成所述树脂层的工序；
在所述电极上和所述树脂层上，按照所述突起体的所述规定的图案对所述导电层构图的工序；
以构图的所述导电层为掩模，除去位于所述导电层之间的树脂层，形成所述突起体的工序。
2.根据权利要求1所述的半导体器件的制造方法，其特征在于：
通过等离子体加工除去所述树脂层。
3.根据权利要求1或2所述的半导体器件的制造方法，其特征在于：
所述导电层由溅射法形成。
4.根据权利要求1或2所述的半导体器件的制造方法，其特征在于：
通过电镀形成所述导电层。
5.根据权利要求1～4中任意一项所述的半导体器件的制造方法，其特征在于：
对所述导电层构图的工序具有：在形成所述树脂层之前，形成覆盖所述电极的第一导电层的工序；
形成与第一导电层连接并到达所述树脂层上面的第二导电层的工序。
6.根据权利要求5所述的半导体器件的制造方法，其特征在于：
通过无电解镀镍形成所述第一导电层。
7.一种半导体器件，其特征在于：
使用权利要求1～6中任意一项所述的半导体器件的制造方法制造。
8.根据权利要求7所述的半导体器件，其特征在于：
包含：以规定的间隔排列的具有开口部的多个电极；
避开所述电极的开口部的正上方，以与所述电极同一间隔由树脂形成的多个突起体；
通过所述开口部与所述电极电连接的，到达所述突起体的上面的导电层。
9.根据权利要求8所述的半导体器件，其特征在于：
所述突起体被配置在有源面区域的外侧。
10.根据权利要求8或9所述的半导体器件，其特征在于：
所述导电层具有：与所述电极电连接的第一导电层、与所述第一导电层连接并且到达所述树脂层的上面的第二导电层。
11.一种电路板，其特征在于：
安装了权利要求7～10中任意一项所述的半导体器件。
12.一种电光装置，其特征在于：具有：电光面板、
电连接在所述电光面板上的权利要求7～10中任意一项所述的半导体器件。
13.一种电子仪器，其特征在于：
具有权利要求12所述的电光装置。
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US20100295176A1 (en) 2010-11-25

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