CN1502137A - 发光装置 - Google Patents

发光装置 Download PDF

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Publication number
CN1502137A
CN1502137A CNA018207685A CN01820768A CN1502137A CN 1502137 A CN1502137 A CN 1502137A CN A018207685 A CNA018207685 A CN A018207685A CN 01820768 A CN01820768 A CN 01820768A CN 1502137 A CN1502137 A CN 1502137A
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CN
China
Prior art keywords
light
phosphor
emitting device
emitting
emitting component
Prior art date
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Granted
Application number
CNA018207685A
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English (en)
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CN1291503C (zh
Inventor
̫���һ��
太田光一
平野敦雄
太田昭人
斯特凡·塔施
彼得·帕克勒
贡杜拉·罗特
ط
瓦尔特·特夫斯
�����������շѶ�
沃尔夫冈·肯普费尔特
德特勒夫·斯塔里克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tridonic Optoelectronics GmbH
Leuchtstoffwerk Breitungen GmbH
Bitec GbR
Toyoda Gosei Co Ltd
Original Assignee
Tridonic Optoelectronics GmbH
Leuchtstoffwerk Breitungen GmbH
Bitec GbR
Toyoda Gosei Co Ltd
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Application filed by Tridonic Optoelectronics GmbH, Leuchtstoffwerk Breitungen GmbH, Bitec GbR, Toyoda Gosei Co Ltd filed Critical Tridonic Optoelectronics GmbH
Publication of CN1502137A publication Critical patent/CN1502137A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7783—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals one of which being europium
    • C09K11/7795—Phosphates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/7734—Aluminates
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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    • F21Y2105/00—Planar light sources
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Abstract

一种发光装置，具有发光元件，所述发光元件由氮化物半导体和磷光体制成，所述磷光体吸收部分由发光元件发出的光并发出与所吸收的光具有不同波长的光，磷光体由通过铕活化的碱土金属硅酸盐荧光材料制成。

Description

发光装置
技术领域
本发明涉及一种包括发光元件的发光装置，尤其涉及一种发光装置，所述发光装置包括：可在第一光谱区发光的发光元件；磷光体，其来源于碱土金属正硅酸盐族并至少包含磷族碱土金属正硅酸盐，并吸收从发光元件所发出的部分光并在另一光谱区发光。
背景技术
发光装置为如无机LED、有机LED、激光二极管、无机厚膜电致发光片、或无机薄膜电致发光单元。
特别地，LED的显著特征为具有较长的寿命、不必有较大的空间、具有较强的抗冲击性，以及在窄光谱带发光的特性。
活性半导体材料LED固有的光发射不能充足地提供许多发光颜色，尤其是许多具有宽光谱带的发光颜色。当目标是白色光发射时尤其是如此。
从现有技术来看，最初由半导体得不到的发光颜色可通过颜色转换技术得到。
颜色转换技术基本上是基于下述原理：也就是说，至少一种磷光体设置在LED模上；磷光体吸收从模上发射的光；接着磷光体以另一光发射颜色发射光致发光光。
为了组成磷光体，基本上，可以利用有机材料也可利用无机材料。无机颜料的基本优点为比有机衬底磷光体有更高的环境阻力。考虑到基于无机LED的长寿命的颜色稳定性，无机材料更加有利。
考虑到加工的容易性，很明显，使用无机荧光颜料替代有机荧光涂层衬底磷光体是有利的，所述有机荧光涂层衬底磷光体需要过长生长周期，以便得到必要的膜厚。颜料被添加到基体中，并接着放置在LED模上。
由于满足上述要求的无机材料的数量很少，在绝大多数情况下，YAG族材料目前被用作颜色转换的颜料。然而，YAG族材料的缺点为：他们仅在光发射最大值小于560nm时具有较高的效率。出于这个原因，当结合蓝色二极管(450nm和490nm)使用YAG颜料时，仅可实现带有冷感的白色发射光颜色。特别地，在照明设备中，关于颜色温度和颜色复制的要求很高。这种要求现在不可能由现有的白色LED所的产品所满足。
国际公开No.WO00/33389公开了：Ba2SiO4:Eu2+可用作磷光体以便在使用蓝色LED时得到接近白色的光。Ba2SiO4:Eu2+所发射的光具有505nm的相对较短的波长，因此，光明显为冷色。
S.H.M.Poort et a1.，“Optical properties of Eu2+-activated”，page 297中报道了Ba2SiO4和一种由Eu2+活化的磷酸盐如KbaPO4和KSrPO4的特性。在这篇报道中，证明了Ba2SiO4的光发射为505nm。而且，报道了两种磷酸盐的光发射基本上为更短的波长(420nm和430nm)。
发明内容
本发明的目的是提供一种光发射装置，通过磷光体对第一光源发出的紫外线或蓝色射线的极好吸收性，所述发光装置通过高光致发光作用可提供不同的发光颜色或较高的颜色复制性。在这种情况下，特别有利的是，在通常用作普通照明设备光源的CIE偏斜椭圆中的颜色的色位极其接近2600K和7000K之间的色温范围。
根据本发明，发光装置包括：发光二极管，其由氮化物半导体制成；磷光体，其吸收由所述发光二极管发出的一部分光并发射与所吸收的光具有不同波长的光。磷光体由用铕活化的碱土金属硅酸盐荧火材料制成。
磷光体可以是由二价铕活化的碱土金属正硅酸盐，可用公式表示如下：
(2-x-y)SrOx(Ba，Ca)O·(1-a-b-c-d)SiO2·aP2O5bAl2O3cB2O3dGeO2:yEu2+
(其中，0＜x＜1.6，0.005＜y＜0.5，和0＜a，b，c，d＜0.5)和/或碱土金属正硅酸盐可由下式表示：
(2-x-y)BaO·x(Sr，Ca)O·(1-a-b-c-d)SiO2·aP2O5bAl2O3cB2O3dGeO2:yEu2+
(其中，0.01＜x＜1.6，0.005＜y＜0.5，和0＜a，b，c，d＜0.5)
其中，有利的是，a，b，c，和d其中至少有一个大于0.01。
即，在硅酸锶或硅酸钡和正硅酸锶的混合物来替代硅酸钡的情况下，意外地发现辐射光的波长被延长了。由锗及附加存在的的P2O3、Al2O3、和/或B2O3替代硅可影响光发射光谱。结果，在每一种使用情况中光发射光谱可被调节到最佳。
有利的是，发光装置具有由二价铕和/或锰、和/或Y(V，P，Si)O4:Eu活化的碱土金属铝酸盐族中的磷光体，或者来自碱土金属二矽酸镁Eu2+，Mn2+的用于发射红色光的不同磷光体，可由下式表示：
Me(3-x-y)MgSi2O3:xEu，yMn
(其中0.005＜x＜0.5，0.005＜x＜0.5，及Me表示Ba和/或Sr和/或Ca)。
而且，还发现，在磷光体基体中包含少量的单价离子，尤其是卤化物有利于提高结晶度和辐射率。
有利的是，第一光谱区为300至500nm。在这个波长区，本发明的磷光体可被很好地活化。
而且，有利的是，第二光谱区为430至650nm。在这种情况下，还可得到相对纯的白色光。
有利的是，发光装置发射Ra值＞72的白色光。
附图简述
图1示出了根据本发明第二优选实施例的LED灯的剖面图；
图2示出了图1的蓝色LED的层状结构的剖面图；
图3示出了根据本发明第三优选实施例的平面光源装置的结构，其中，图3(a)为平面图和图3(b)为沿图3(a)的线A-A的剖面图；
图4示出了根据本发明第四优选实施例的SMD(表面安装二极管)型LED灯的剖面图；
图5示出了根据本发明第五优选实施例的LED灯的剖面图；
图6示出了齐纳二极管用作过压保护元件的连接电路图；
图7示出了电容器用作过压保护元件的连接电路图；和
图8示出了根据本发明第六优选实施例的半导体发光装置的剖面图。
具体实施方式
在根据本发明的第一实施例中，光发射装置包括两种不同的磷光体，并且在这种情况下，磷光体中至少其中之一为碱土金属正硅酸盐磷光体。因此，白色调可被特别精确地调整。
在根据本发明的光发射装置的结构变化中，存在许多可能性。根据优选的实施例，一个或多个LED芯片设置在反射镜中的衬底上，磷光体分散在设置在反射镜上的透镜中。
然而，还有可能一个或多个LED芯片设置在反射镜中的衬底上，磷光体涂在反射镜上。
LED芯片可方便地用透明的类似圆屋顶形的密封剂填充。密封剂一方面提供了机械保护，另一方面密封剂还改善了光学性能(改善了LED模模的光发射)。
磷光体可分散在密封剂中。利用密封剂，设置在衬底上的LED芯片和聚合体透镜可被粘合而尽可能少地包含气体。在这种情况下，聚合体透镜和密封剂的折射率之差最大为0.1。可直接利用密封剂密封LED模。然而，也可利用透明密封剂密封LED模(即，在这种情况下，利用透明密封剂和包含磷光体的密封剂)。由于折射率彼此接近，在界面上的折射损耗很小。
有利的是，聚合体透镜具有球形和椭圆形凹陷。凹陷可用密封剂填充。结果，LED阵列可固定在与聚合体透镜较短距离处。因此，可减小机械结构尺寸。
为了实现磷光体的均匀分布，有利的是，磷光体被方便地悬浮在无机基体中。
在使用两种磷光体的情况下，有利的是，两种磷光体被悬浮在任一基体中，并且，在这种情况下，这些基体设置在光传播方向的前面和后面。因此，与不同磷光体混合在一起分散的情况相比，可减小基体浓度。
接着，下面将说明在根据本发明第一优选实施例制造磷光体的过程中的重要步骤。
在生产硅酸盐磷光体的过程中，根据所选择的成份比率，将碱土金属碳酸盐、二氧化硅及氧化铕以每一化学计量进行充分混合作为初始物质，并利用用于产生磷光体的常规固态反应，在1100℃和1400℃下在还原空气中可转换成所需要的磷光体。在这方面，有利的是，将少量氯化铵或另一种卤化物(优选小于0.2摩尔)添加到反应混合物中，以便提高结晶程度。如果需要，部分硅可由锗、硼、铝或磷来替代，或者部分铕可由锰来替代。这可通过添加上述各种元素的相应量的化合物来实现，所述化合物通过加热进行分解。在这种情况下，保持反应条件范围。
所得到的硅酸盐发射出波长为510nm至600nm的光，其半带宽达110nm。
通过利用从上述磷光体族中选择的一种磷光体或从上述磷光体族中所选择的磷光体的混合物，或由二价铕和/或锰所活化的碱土金属铝酸盐磷光体的混合物，还有用于从Y(V，P，Si)O4:Eu2+族中选择的发射红光的不同磷光体，以及从Y2O2S:Eu3+族中所选择的常规磷光体，可得到具有确定的色温和较高颜色复制性的发射光颜色。下面示出了这些例子。
T＝2778K(464nm+Sr1.4Ba0.6SiO4:Eu2+)；x＝0.4619，y＝0.4247，Ra＝72，
T＝2950K(464nm+Sr1.4Ba0.6SiO4:Eu2+)；x＝0.4380，y＝0.4004，Ra＝73，
T＝3497K(464nm+Sr1.6Ba0.4SiO4:Eu2+)；x＝0.4086，y＝0.3996，Ra＝74，
T＝4183K(464nm+Sr1.9Ba0.08Ca0.2SiO4:Eu2+)；x＝0.3762，y＝0.3873，Ra＝75，
T＝6624K(464nm+Sr1.9Ba0.02Ca0.08SiO4:Eu2+)；x＝0.3101，y＝0.3306，Ra＝76，
T＝6385K(464nm+Sr1.6Ba0.4SiO4:Eu2++Sr0.4Ba1.6SiO4:Eu2+)；x＝0.3135，y＝0.3397，Ra＝82，
T＝4216K(464nm+Sr1.9Ba0.08Ca0.02SiO4:Eu2+)；x＝0.3710，y＝0.3696，Ra＝82，
3954K(464nm+Sr1.6Ba0.4SiO4:Eu2++Sr0.4Ba1.6SiO4:Eu2++YVO4:Eu3+)；x＝0.3756，y＝0.3816，Ra＝84，
T＝6489K(464nm+Sr1.6Ba0.4SiO4:Eu2++Sr0.4Ba1.6SiO4:Eu2++铝酸镁钡:Eu2+)；x＝0.3115，y＝0.3390，Ra＝66，
T＝5097K(464nm+Sr1.6Ba0.4(Si0.08Ba0.02)O4:Eu2++Sr0.6Ba1.4SiO4:Eu2+)；x＝0.3423，y＝0.3485，Ra＝82，
T＝5084K(464nm+Sr1.6Ba0.4(Si0.08B0.02)O4:Eu2++Sr0.6Ba1.4SiO4:Eu2++铝酸镁锶:Eu2+)；x＝0.3430，y＝0.3531，Ra＝83，
T＝3369K(464nm+Sr1.4Ba0.6Si0.95Ge0.05O4:Eu2+)；x＝0.4134，y＝0.3959，Ra＝74，
T＝2787K(466nm+Sr1.4Ba0.6Si0.98P0.02O4.01:Eu2+)；x＝0.4630，y＝0.4280，Ra＝72，
T＝2913K(464nm+Sr1.4Ba0.6Si0.98Al0.02O4:Eu2+)；x＝0.4425，y＝0.4050，Ra＝73，
在根据本发明的一个有利的实施例中，可按如下方法进行颜色转换。
将一个或多个LED芯片组装在衬底上。直接在衬底上设置密封材料，形成半球形或半椭圆形(一方面是为了保护LED芯片保护装置，另一方面是为了发射优选的在LED芯片中所产生的发射光)。密封材料可分别密封每一膜，或者可形成所有的LED膜共用的密封材料。因此，所制造的衬底设置在反射镜中或反射镜设置在LED芯片上。
反射镜上安装有透镜。一方面，透镜用于保护装置，另一方面，荧光颜料混合在透镜中。因此，透镜给人以不透明和黄颜色的印象。当穿过光学部件时，穿过透镜的蓝光(包括紫外线)就会被转换成较长波长的光(黄色光)。结果，还可通过混合蓝光和转换光(黄光)得到白色印象。例如，在平行的平板之间所产生的波导效应损失可由于透镜的不透明性和分散特性而减小。而且，利用反射镜，只有初调的光被控制进入透镜。结果，在一开始就减小了总的反射效应。
或者，反射镜可设置在每一LED芯片上，反射镜被填充为圆屋顶形状，而且，透镜设置在每一反射镜的上方或整个装置的上方。
在用于照明的光发射装置的生产中，有利的是，利用LED阵列来替代单个LED。在本发明的另一优选实施例中，通过将LED芯片直接组装在衬底上形成的LED阵列(如下所述)来执行颜色转换。
利用密封剂(如环氧树脂)，可将LED阵列与由另一种材料(如PMMA)制成的透明聚合体透镜粘合在一起。选择聚合体和密封剂的材料以便具有尽可能接近的折射系数，即，具有相位匹配。密封剂存在于聚合体透镜的最大球形或椭圆形凹陷中。凹陷形状的重要性在于若颜色转换物质分散在密封剂中。因此，根据凹陷形状，可保证得到光发射颜色而不考虑角度。此外，上述阵列可填充透明密封剂，而且，上述阵列可用包含颜色转换物质的密封剂与用上述聚合体透镜粘合在一起。
对于使用至少两种不同磷光体并具有特别优选的颜色复制性的LED，有利的是，将磷光体分别分散并添加，而不是将磷光体一起分散在一种基体中。这种方法特别应用于通过多个颜色转换过程而得到最后光发射颜色的化合物。即，具有最长波长的光发射颜色由一个光发射过程产生。在这种情况下，光发射过程如下进行：即，第一磷光体吸收LED的光发射，第一磷光体进行光发射；第二磷光体吸收第一磷光体的光发射，第二磷光体进行光发射。特别地，对于这种过程，有利的是，在光传播方向的前面和后面分散磷光体，因为与简单分散各种磷光体的情况相比，磷光体的浓度可因此被减小。
本发明并不限于上述实施例。磷光体可被组合在聚合体透镜中(或其它光学元件上)。磷光体可直接设置在LED模上，或者可被设置在透明密封剂的表面上。而且，磷光体可与分散的粒子一起组合在基体中。因此，可防止从基体中析出并确保发射单色光。
上述在发光二极管(LED)灯中使用具有光致效应的磷光体的例子将在下面详细说明。
图1为根据本发明的发光装置的第二实施例的LED灯的典型剖面图。图1所示的LED灯也即所谓的“透镜型LED灯”。由GaN半导体所形成的蓝色LED 4通过底座5安装在金属架3(metal stem 3)上，所述金属架3(metal stem 3)形成杯10，杯10用作反射镜，用于在LED灯上方反射从蓝色LED4发射出的光。蓝色LED 4的一个电极通过金连接线7连接到引线框2上，另一电极通过金连接线6连接到引线框1上。杯10的内部填充有内部树脂8，其作为涂敷部件用于固定蓝色LED 4。而且，设置有金属架3(metal stem 3)的引线框2和引线框1被作为注模部件的外部树脂9覆盖。因此，蓝色LED4被用内部树脂8和外部树脂9双层覆盖。金属架3(metal stem 3)和引线框1还称作座架引线(mount lead)。下面将详细说明蓝色LED 4。
包含磷光体11的内部树脂8填充在杯10中到达杯10上部边缘水平面以下的水平。当多个LEDs以这种方式彼此靠近设置时，这种结构可防止LEDs之间的颜色混合，并能利用LEDs实现平面显示，以便产生具有高清晰度的图像。
关于内部树脂8，使用固化时变成透明的硅树脂或环氧树脂。内部树脂8包含主要由二价铕活化的碱土金属正硅酸盐和/或碱土金属正硅酸盐组成的磷光体11。如上所述，磷光体11具有光致发光效应。特别是，磷光体11吸收从蓝色LED 4发出的光并发射出与所吸收的光具有不同波长的光。
作为硅树脂或环氧树脂的替代物，低熔点玻璃可用作内部树脂8。低熔点玻璃具有极好的防潮性，同时，还可防止有害离子进入蓝色LED4。而且，由蓝色LED 4发出的光同样可通过低熔点玻璃，而不被玻璃吸收。因此，不必要预期光吸收而发射具有较高强度的光。
而且，散射物质可掺入作为内部树脂8的包含磷光体11的硅树脂或环氧树脂中，或掺入其中包含磷光体11的低熔点玻璃中。散射物质不规则地反射从蓝色LED 4发出的光，以便产生散射光。因此，从蓝色LED 4发出的光可能更适用于磷光体11，从而可增加从磷光体11发出的光量。对散射物质没有特别的限制，可使用任何熟知的材料。
至于外部树脂9，可使用固化时变为透明的环氧树脂。
从良好的操作性能的观点来看，各种树脂如环氧树脂可用于底座5。优选的是，用于底座5的树脂具有粘结性能，此外，从即使当底座5被朝着很小的蓝色LED 4的侧面推出时仍可避免在侧面处的各层之间短路的观点来看，优选的是，用于底座5的树脂还具有绝缘性能。
底座5由透明树脂形成，从而从蓝色LED 4无向性地发射出的光可通过透明树脂，并从杯10表面上的反射镜上反射，进而发射到LED灯的上方。特别是，当LED灯用作白色光源时，底座5的颜色可以是不妨碍白色光的白色。
底座5可包含磷光体11。在使用磷光体11的LED灯的情况下，光密度远高于不使用磷光体11的LED灯的情况。特别是，由于从蓝色LED4发出的光不能穿过磷光体11，从蓝色LED 4发出的光由设置在LED 4附近的磷光体11所反射，并重新作为由磷光体11激发的光无向发射，并且同样被杯10表面上的反射镜所反射，进而由于LED灯的各个不同部分之间的折射率不同而被进一步反射。因此，光线被局部密集地限制在蓝色LED 4附近的部分，致使蓝色LED 4附近的光密度非常高，从而有助于从LED灯发射出高亮度的光。
蓝色LED 4无向发光，所发出的光同样被从杯10的表面反射出来。这些光透过底座5，因此，在底座5内的光密度很高。因此，将磷光体11掺入到底座5中可允许这些从蓝色LED发射出的光被底座5中包含的磷光体11反射，并重新作为由包含在底座5中的磷光体11激发的光被无向发射。因此，同时向底座5中掺加磷光体11还可增强由LED灯发射的光的亮度。
而且，底座5也可由含无机材料如银的树脂制成。由于树脂如环氧树脂被用于底座5并且用作内部树脂8，当高亮度LED灯使用较长时间后，内部树脂8或底座5在非常靠近蓝色LED 4的部分形成合成树脂，呈现褐色或黑色并退化，导致发光效率降低。特别是，底座5靠近蓝色LED 4的部分的着色明显降低了发光效率。底座5不仅要求具有对蓝色LED 4发出的光的抗光性(抗老化性)，还要求具有粘性、紧密接触性等特性。由光所引起的树脂的退化问题可通过将包含无机材料(如银)的树脂用于底座5来解决。满足这些性能要求的底座5可通过将银膏和磷光体11与底座粘合剂(mount paste)混合，利用安装设备将混合物涂敷在金属架3(metal stem 3)上，并接着将蓝色LED 4粘合到涂层上。
底座5除了可由包含银的环氧树脂制成外，还可由包含无机材料的有机树脂，如硅树脂制成。包含在底座5中的无机材料应能与树脂密切接触，即，应对树脂具有很好的粘结性，与此同时，还应不会被蓝色LED4所发出的光所退化。为了满足这些要求，从银、金、铝、铜、氧化铝、硅、氧化钛、氮化硼、氧化锡、氧化锌及ITO中选择至少一种无机材料，并将其掺入到树脂中。特别是，银、金、铝、铜及其类似物可提高热辐射并可导电，因此，可应用于期望具有电导性的半导体装置。氧化铝、硅、氧化钛、氮化硼及其类似物具有很高的抗老化性并且可使底座5保持高反射性。无机材料可以有各种形式，如球状、针状、薄片状，具体可结合考虑例如分散性和电导性来确定。在底座5中，热辐射、电导性及其类似特性可通过改变树脂中无机材料的含量被调节到各种不同的水平。然而，由于在树脂中增加无机材料不会引起树脂的明显退化，但会降低粘性，退化，所以就重而言，无机材料的含量不小于5％并且不大于80％。无机材料的重量含量不小于60％并且不大于80％退化能更好地适合防止树脂的退化。
这样，将无机材料如银(其暴露在发出的光中不易退化)掺入到蓝色LED 4中可抑制由光引起的底座5中的树脂的退化退化退化。因此，掺入无机材料可减小由退化而引起的变色区域，可防止降低发光效率，并可提供良好的粘结性(密切接触)。同时将磷光体11掺入底座5中可进一步提高LED灯的亮度。
这样即可实现提供一种LED灯，所述LED灯可发出具有高亮度的光，并且，即使在高亮度下使用很长时间后，发光效率只有很小的降低。而且，使用具有高热导性的材料可稳定蓝色LED 4的特性并可减小不规则的颜色。
图2示出了图1所示的LED灯的蓝色LED 4的层状结构。蓝色LED4包括透明衬底，如蓝宝石衬底41。例如，缓冲层42、n-型接触层43、n-型覆层44、MQW(多量子阱)活化层45、p-型覆层46及p-型接触层47以此顺序例如通过MOCVD在蓝宝石衬底41上形成了氮化物半导体层。因此，光透明电极50形成于p-型接触层47的整个表面，p电极48形成于光透明电极50的一部分上，及n-电极49形成于n-型接触层43的一部分上。这些层可通过如溅射或真空沉淀形成。
缓冲层42可由如AlN形成，及n-型接触层43可由如GaN形成。
n-型覆层44可由如AlyGal-yN形成，其中0≤y＜1，p-型覆层46可由如AlxGal-xN形成，其中0＜x＜1，及p-型接触层47可由如AlzGal-zN形成，其中0≤z＜1并且z＜x。P-型覆层46的带隙大于n-型覆层44的带隙。n-型覆层44和p-型覆层46每层可具有单成份结构，或具有这样的结构，即上述的厚度不大于100埃的氮化物半导体层，各层彼此成份不同，互相堆叠在另一层顶部，以便提供超晶格结构。当层厚度不大于100埃时，可防止发生层的破裂或晶体缺陷。
MQW活化层45由多个InGaN势阱层和多个GaN势垒层组成。势阱层和势垒层的厚度不大于100埃，优选为60至70埃，以便构成超晶格结构。由于InGaN晶体比其它包含铝的氮化物半导体如AlGaN软，在构成活化层45的层中使用InGaN可提供如下优点：即所有堆叠的氮化物半导体层不易破裂。MQW活化层45还可由多个InGaN势阱层和多个AlGaN势垒层组成。或者，MQW活化层45可由多个AlInGaN势阱层和多个AlInGaN势垒层组成。在这种情况下，使势垒层的带隙能量大于势阱层的带隙能量。
反射层可设置在从MQW活化层45开始的蓝宝石衬底41的一侧，例如，设置在n-型接触层43的靠缓冲层42的一侧。反射层还可设置在蓝宝石衬底41的表面上，所述蓝宝石衬底41远离堆叠在蓝宝石衬底41上的MQW活化层45。反射层优选相对于活化层45发出的光具有最大的反射系数，所述反射层可由例如铝形成，或具有由薄GaN层形成的多层结构。反射层的设置允许从活化层45发出的光由反射层反射，可减小由活化层45发出的光的内部吸收，增加向上的光输出量，及减少光入射到底座5上，从而防止由光引起的底座5的退化。
具有上述结构的蓝色LED 4的光发射波长的半值宽度不大于50nm，优选不大于40nm。蓝色LED 4的峰值光发射波长在380nm至500nm的范围内，如为450nm。
在具有上述结构的LED灯中，当在引线框1、2之间施加电压时，蓝色LED 4发出波长为450nm的蓝光。蓝光激发包含在内部树脂8中的磷光体11，被激发的磷光体11发出波长为560和570nm的黄光，在内部树脂8中由蓝光和黄光组成的混合光透过外部树脂9被泄露到外部。在这种情况下，人的裸眼所见的混合光为白色，结果，LED灯看起来似乎为发出白色光的LED灯。特别地，磷光体11由蓝色LED 4发出的蓝色光激发并发射黄色光，所述黄色与蓝色具有补色关系并较蓝色有较长的波长。根据本发明，通过多种磷光体的组合可产生更接近纯白色的光。
图3示出了涉及根据本发明第三优选实施例的发光装置的平面光源装置的结构，其中图3(a)为其平面图及图3(b)为沿图3(a)线A-A的剖面图。
图3所示的平面光源装置可用于如液晶面板的背景光装置。通过从背面照亮液晶面板，使得液晶面板上的不具有发光性的字符或图像产生亮度或对比度，可提高字符或图像的可见度。所述平面光源装置配备并由下列元件组成。
即，所述平面光源装置包括：透明且大体为矩形的光导板70；多个LEDs 4，其被排成阵列并埋在光导板70的一侧，与光导板70光学连接；用于反射光的光反射壳体71，其包围光导板70的除发光面70a以外的其它面，并被固定到光导板70上；光散射图案73，其包括对称的和细小的凹凸图案，所述凹凸图案形成于与光导板70的发光面70a相对的光反射面72上；透明膜74，其被固定到光导板70上，以便覆盖发光面70a，并且其内包含有磷光体11。
而且，蓝色LED 4其中每一个被固定到光反射壳体71上，以便通过供电装置如连接导线和引线框从电源施加预定电压的驱动电压。提供光散射图案73用于在光导板70内部散射从蓝色LEDs 4发出的光。
在这种组成的平面光源装置中，当驱动电压施加到每一个蓝色LED 4时，被驱动的每一个蓝色LED 4就会发光。所发射的光向预定的方向在光导板70的内部传播并与光反射面72上形成的光散射图案73碰撞，从而被反射和散射。光通过膜74从发光面70a以平面光发出。当部分从蓝色LEDs 4发出的光通过膜74时，其被磷光体11吸收，并同时进行光的波长转换，以便重新发射。根据上面提到的原理，这将导致：从膜74的前面看，发出的光的颜色变为这些光混合后的合成色，例如白色。类似地，根据第三优选实施例的平面光源装置，从蓝色LEDs 4发出的光被输入光导板70，接着，当输入的光被反射并被在光导板70的反射面72上形成的光散射图案73散射时，输入的光从反射面70a发射到膜74，在膜74中，所述光部分地被磷光体11吸收，与此同时，进行波长转换以便重新发射。因此，仅使用蓝色LEDs 4，而不使用如常规情况中的具有红、绿和蓝中的每一种颜色的LEDs，就有可能使所发射的光的颜色为白色。而且，在这种结构中，由于磷光体11和蓝色LED 4互相不直接接触，就磷光体11的退化可被抑制很长时间，因而，平面光源的预定色调可保持较长的时间。
此外，通过改变包含在膜74中的磷光体11的种类，有可能实现发射出的光的颜色不仅为白色，还可为其它颜色。若膜74的安装结构被制成易于除去的结构，并准备出多种膜74，所述多种膜中的每一种膜包含种类互不相同的磷光体11，则仅通过改变膜74，就可方便地改变平面光源的色调。
而且，除了将磷光体11包含在膜74中的方法之外，还可将磷光体11涂敷在膜74上，在这种情况下，可得到与磷光体包含在膜74中的情况类似的效果。
而且，尽管蓝色LED 4通过埋入光导板70中与光导板70光学连接，除此之外，还可通过将蓝色LED 4粘结到光导板70的端面，或利用光传导装置如光纤将由蓝色LED 4发射出的光引导到光导板70的端面，从而实现蓝色LED 4与光导板70的光学连接。而且，所使用的蓝色LED4的数量可以是一个。
图4示出了根据本发明的发光装置的第四优选实施例的SMD(表面安装装置)型LED灯。
所述SMD-型LED灯具有如下所述的结构。金属架由两个金箔81和82的接线结构(wiring pattern)形成，所述金箔81和82覆盖在具有绝缘性质的玻璃环氧树脂衬底80的两个表面上，并彼此形成电隔离。在接线结构(wiring pattern)81和82上面，设置有具有塑料制的杯83a的框架83。杯83a的表面构成反射镜，其反射从蓝色LED 4发射的光。接线结构(wiring pattern)81和82不对称。接线结构(wiring pattern)82的上表面延及由框架83形成的空间的底部中心，而另一结线结构81只有少部分暴露到由框架83所形成的空间的底部。
蓝色LED 4用包含银丝的环氧树脂粘结剂牢固地粘结到接线结构82的上表面上。蓝色LED 4的P-电极和接线结构(wiring pattern)82用金连接线6连接，及蓝色LED 4的n-电极和接线结构(wiring pattern)81用金连接线7连接。
由框架83的杯83a所形成的空间内部被填充密封材料88，所述密封材料88粘结后变为透明。蓝色LED 4由密封材料88固定。密封材料88包含主要由由二价铕活化的碱土金属正硅酸盐和/或碱土金属正硅酸盐组成的磷光体11。密封材料88包括环氧树脂或硅树脂。包含磷光体11的密封材料88可填充到由框架83的杯83a所形成的整个空间，或填充到框架83的上边缘以下的位置。
与此同时，包含磷光体11的密封材料88还可包含散射物质。这些散射物质可引起由蓝色LED发出的光的不规则反射，并将所述光改变为散射光。结果，从蓝色LED 4发射的光很容易碰撞磷光体11，因此，可增加从磷光体11发射的光量。对散射物质没有特别的限制，可使用熟知的散射物质。
在具有类似组成的SMD-型LED灯中，当电压施加在接线结构(wiringpattern)81和82之间时，蓝色LED 4发出波长为450nm的蓝光。蓝光激发包含在密封材料88中的磷光体11，被激发的磷光体11发射波长为560至570nm的黄光。由密封材料中的蓝光和黄光构成的混合光通过密封材料88到达其外部，人眼看起来是白光。结果，LED灯看上去似乎在发射白光。即，磷光体11被蓝色LED 4发射的光激发，并发射出黄光，所述黄光与蓝光为补色关系并具有比蓝光更长的波长。根据本发明，通过结合多种磷光体，可得到接近纯白的白色光。
图5示出了根据本发明第五优选实施例的发光装置的LED灯的示意图。在本实施例中，蓝色LED 4设置为：其可免于静电过压及类似现象，其构成为在图1所示的光源上添加过压保护元件91。
如图5所示，过压保护元件91在尺寸基本与蓝色LED 4相等的芯片上制成，及保护元件位于蓝色LED 4和底座5之间。在本实施例中，蓝色LED 4以不同于图1所示情况的倒置芯片形式进行安装，其原因将在后面描述。过压保护元件91设置有用于连接蓝色LED 4和引线框1的电极92和93。电极92位于与图2所示的p-电极48相对的位置，而电极93位于与n-电极49相对的位置。而且，所形成的电极93延伸到过压保护元件91的侧面，以便易于与连接线6连接。过压保护元件91上的电极92和93通过Au凸起94a和94b分别与蓝色LED 4的p-电极48和n-电极49相连接。过压保护元件91可以是齐纳二极管或者为电容器及类似的元件，所述齐纳二极管在所施加的电压大于规定的电压时开始工作，所述电容器吸收脉冲电压。
图6示出了齐纳二极管用作过压保护元件91的连接电路图。用作过压保护元件91的齐纳二极管95与蓝色LED 4电并连，其中，蓝色LED 4的阳极与齐纳二极管95的阴极相连。当过电压施加在引线框1和引线框2之间时并且若电压大于齐纳二极管95的齐纳电压时，蓝色LED 4的端电压由齐纳电压保持，从而前者的电压不会超过齐纳电压。因此，可防止对蓝色LED 4施加过电压，从而使蓝色LED 4不受过压影响，从而避免了LED 4发生设备故障或性能下降。
图7示出了电容器用作过压保护元件91的连接电路图。用于过压保护元件91的电容器96可为用于表面安装的芯片形元件。具有如上述结构的电容器96在其相对侧上设置有带状电极，并且这些电极并连到蓝色LED 4的阳极和阴极。当过电压施加在引线框1和引线框2之间时，充电电流因过电压流经电容器96，以便快速降低其端电压，因此，施加到蓝色LED 4上的电压不会升高。因此，可防止蓝色LED 4受到过电压影响。
而且，即使当施加包含高频成份的噪声时，电容器96用作旁路电容，因此可排除额外的噪声。
如上所述，蓝色LED 4以倒置芯片形式安装，其相对于图1所示形势被颠侄过来。其原因在于：因为设置了过压保护元件91，过压保护元件91和蓝色LED都需要电连接。若蓝色LED 4和过压保护元件91中的每一个都使用连接线连接，就增加了连接线的数目，从而降低了生产率，此外，由于增加了连接线本身的接触、断开等等情况，从而就存在着可靠性降低的隐患。因此，蓝色LED以倒置芯片形式安装。更具体而言，图2所示的蓝宝石衬底41位于最上面，其中，p-电极48通过Au凸起94a连接到过压保护元件91的电极92上，而n-电极49通过Au凸起94b连接到过压保护元件91的电极93上。因此，就不必要使连接线6和7与蓝色LED 4相连接。若蓝色LED 4以倒置芯片形式安装，图2所示的透光电极50可由不透光电极来替代。而且，可以这样设置，即：n-电极49被加厚，以便与p-电极48的表面具有相同的高度，或用新的导体连接n-电极49，以便其可被用作电极。
如上所述，根据图5所示的构造，除了具有图1所示的光源构造的标准优点外，还具有以下优点，即：即使因静电等原因而施加了过电压，也不会发生LED 4被损坏或性能变坏的情况。而且，由于过压保护元件91用作次级底座，即使蓝色LED 4以倒置芯片形式安装，也不会降低连接线6和7在芯片侧面上的连接位置的高度。因此，在与图1的构造大体相同的位置上进行连接。
若半导体器件用作图5和6的过压保护元件91，可使用普通的硅二极管来替代齐纳二极管。在这种情况下，硅二极管的数量这样确定，即将多个硅二极管的极性制造为彼此相同，它们彼此串连连接，从而相对于过压而言，前向总压降的值(约0.7V×硅二极管的数量)等于操作电压。
而且，可变电阻器也可用于过压保护元件91。可变电阻器的特性为其电阻值随所施加电压的增加而减小，因此，同齐纳二极管95一样，可变电阻器可抑制过电压。
图8示出了根据本发明第六优选实施例的半导体发光装置。
图8所示的半导体发光装置包括：引线框1、2，金属架3(metal stem3)，蓝色LED 4，底座5，连接线6、7，不包含磷光体11的内部树脂8，外部树脂9，杯10，及透明的磷光体罩100；其中，从光发射元件发出的光经波长转换并辐射到透镜形树脂密封剂的外面。
再者，磷光体罩100由如包含磷光体11的树脂敷层材料制成，当磷光体11由从蓝色LED 4发射出的光激发时会产生磷光。树脂敷层材料为如透明聚酯树脂、丙烯酸树脂、氨基甲酸乙酯、尼龙、硅树脂、氯乙烯、聚乙烯、酚醛塑料、CR39(丙烯乙二醇碳酸树脂)等等。由于氨基甲酸乙酯、尼龙、硅树脂可增加磷光体罩100的弹性，所以，很容易将其安装在外部树脂9上。
而且，磷光体罩100被成形以便粘贴到外部树脂9的外表面上，即，成形为半球形罩与圆柱形罩的上部结合为一体的固体结构，并可拆卸地安装到外部树脂9上。而且，磷光体罩100优选为薄膜，以便减少因磷光体11而引起的光散射。而且，当将包含磷光体11的树脂通过注模形成预定的形状，然后粘贴到外部树脂9上时，磷光体罩100可相对容易地制造。然而，可通过将包含有磷光体11的树脂材料直接喷溅到外部树脂9上并固化树脂材料来制造磷光体罩100，从而使在外部树脂9和磷光体罩100之间不会出现气隙。
在带有上述结构的半导体发光装置中，从蓝色LED 4发射的光经由内部树脂8和外部树脂9入射到磷光体罩100中。部分入射光被磷光体11吸收，并同时经波长转换后发射到外部。因此，从磷光体罩100外部所观察到的发射光的颜色为合成光的颜色，如根据前述原理形成白色。
因此，根据半导体发光装置的第六实施例，由于作为蓝色LED 4的树脂密封剂的内部树脂8和外部树脂9不包含磷光体11，同时用于覆盖外部树脂9的磷光体罩100包含磷光体11，所以在内部树脂8和外部树脂9中不会产生因磷光体11而发生的光散射。而且，由于磷光体罩100成形为薄膜，因磷光体11而产生的光散射量相对较少。因此，通过将外部树脂9的透镜部分成形为任意形状(在本优选实施例中为半球形)，可得到所希望的光的方向性，从而伴随波长转换的亮度减小可被减至最小。
此外，通过改变包含在磷光体罩100的覆层材料中的磷光体11的种类，可得到除白光以外的其它颜色的发射光。当磷光体罩100具有易于拆卸的结构，并准备出包含不同种类的磷光体11的若干种磷光体罩100时，通过改变磷光体罩100可容易改变发射光的色调。
而且，当磷光体11施加到磷光体罩100的表面上而不是包含在磷光体罩100中时，可得到类似的效果。而且，由于磷光体罩100可安装在从市场上可得到的半导体发光装置上，所以，可以以低成本制造半导体发光装置。
如上所述，根据本发明的包括发光元件和磷光体的发光装置适合于LED显示器、背景光装置、信号灯、照明开关、各种传感器和各种指示器。

Claims (42)

1.一种发光装置，包括：包括氮化物半导体的发光元件；磷光体，所述磷光体可吸收部分由所述发光元件发出的光并可发射与所述吸收的光具有不同波长的光，其特征在于，所述磷光体包括碱土金属硅酸盐。
2.一种发光装置，其中所述磷光体包括由铕活化的碱土金属硅酸盐。
3.根据权利要求1所述的发光装置，其特征在于，所述磷光体为二价铕活化的碱土金属正硅酸盐，可由下式表示：
(2-x-y)SrO·x(Ba，Ca)O·(1-a-b-c-d)SiO2·aP2O5bAl2O3cB2O3dGeO2:yEu2+
其中，0＜x＜1.6，
0.005＜y＜0.5，和
0＜a，b，c，和d＜0.5，和/或
二价铕活化的碱土金属正硅酸盐，可由下式表示：
(2-x-y)BaO·x(Sr，Ca)O·(1-a-b-c-d)SiO2·aP2O5bAl2O3cB2O3dGeO2:yEu2+
其中，0.01＜x＜1.6，
0.005＜y＜0.5，和
0＜a，b，c，和d＜0.5，
附加限定a，b，c，和d值其中至少之一大于0.01。
4.根据权利要求1所述的发光装置，其特征在于，所述磷光体被掺入覆盖所述发光元件的覆盖部件中。
5.根据权利要求4所述的发光装置，其特征在于，所述覆盖部件包括硅酸盐树脂。
6.根据权利要求4所述的发光装置，其特征在于，所述覆盖部件包括环氧树脂。
7.根据权利要求4所述的发光装置，其特征在于，所述覆盖部件包括低熔点玻璃。
8.根据权利要求4至7中任意一项所述的发光装置，其特征在于，所述磷光体与覆盖所述发光元件的覆盖部件相混合，并且散射剂也与覆盖部件相混合。
9.根据权利要求4至8中任意一项所述的发光装置，其特征在于，所述覆盖部件还由第二透明覆盖部件覆盖。
10.根据权利要求1所述的发光装置，其特征在于，所述发光元件包括包含铟的发光层。
11.根据权利要求1或10所述的发光装置，其特征在于，所述发光元件包括双异质结构，所述双异质结构包括夹在p-型覆层和n-型覆层之间的发光层。
12.根据权利要求11所述的发光装置，其特征在于，所述p-型覆层由AlxGa1-xN形成，其中0＜x＜1，和
所述n-型覆层由AlyGa1-yN形成，其中0≤y＜1。
13.根据权利要求11或12所述的发光装置，其特征在于，
所述p-型覆层的带隙大于所述n-型覆层的带隙。
14.根据权利要求10所述的发光装置，其特征在于，
所述发光元件的所述发光层包括量子势阱结构。
15.根据权利要求14所述的发光装置，其特征在于，
所述量子势阱结构包括InGaN的势阱层和GaN的势垒层。
16.根据权利要求14所述的发光装置，其特征在于，
所述量子势阱结构包括InGaN的势阱层和AlGaN的势垒层。
17.根据权利要求14所述的发光装置，其特征在于，
所述量子势阱结构包括AlInGaN的势阱层和AlInGaN的势垒层，和
所述势垒层的带隙能量大于所述势阱层的带隙能量。
18.根据权利要求14所述的发光装置，其特征在于，
所述势阱层的厚度不大于100埃。
19.根据权利要求1所述的发光装置，其特征在于，
所述p-型覆层和/或n-型覆层具有超晶格结构，所述超晶格结构由氮化物半导体层堆积形成，所述氮化物半导体层成份互相不同或彼此不同。
20.根据权利要求1所述的发光装置，其特征在于，所述发光元件利用绝缘粘合剂固定在框架上。
21.根据权利要求20所述的发光装置，其特征在于，所述粘合剂为无色并且是透明的。
22.根据权利要求20或21所述的发光装置，其特征在于，
所述粘合剂含有所述磷光体，所述磷光体包括从所述碱土金属硅酸盐族中选择的材料。
23.根据权利要求20所述的发光装置，其特征在于，
所述粘合剂为白色。
24.根据权利要求1所述的发光装置，其特征在于，
所述发光元件包括透明衬底和氮化物半导体，所述氮化物半导体通过汽相外延在所述透明衬底上生成。
25.根据权利要求24所述的发光装置，其特征在于，所述衬底为蓝宝石。
26.根据权利要求24所述的发光装置，其特征在于，所述发光元件包括光反射层。
27.根据权利要求26所述的发光装置，其特征在于，所述光反射层设置在与形成光发射层的衬底表面相对的衬底表面上。
28.根据权利要求27所述的发光装置，其特征在于，所述光反射层由铝制成。
29.根据权利要求24所述的发光装置，其特征在于，所述光反射层包括多个基于GaN的薄层。
30.根据权利要求1所述的发光装置，其特征在于，从所述发光元件发射出的波长的半值宽度不大于50nm。
31.根据权利要求1所述的发光装置，其特征在于，从所述发光元件发射出的波长的半值宽度不大于40nm。
32.根据权利要求1所述的发光装置，其特征在于，所述发光元件具有380nm至500nm的峰值发射波长。
33.根据权利要求1所述的发光装置，其特征在于，所述磷光体具有主发射波长，所述主发射波长大于所述发光元件的主峰值发射波长。
34.根据权利要求1所述的发光装置，其特征在于，所述发光元件包括大体为矩形的光导板，从而从发光元件发出的光被引导至光导板中并从其光输出面上输出，和
所述磷光体以片状形式设置在所述光导板的光输出面上。
35.一种发光装置，包括：
设置在座架引线(mount lead)的杯内的GaN半导体发光元件；
磷光体，其可吸收部分由所述发光元件发出的光并发射出与所述吸收的光具有不同波长的光；
涂敷部件，所述杯的内部由涂敷部件填充，所述涂敷部件包括包含所述磷光体的密封剂；和
注模部件，其覆盖所述的涂敷部件、发光元件及座架引线的尖端部分，其特征在于，所述磷光体包括从碱土金属硅酸盐族中选择的成员。
36.一种发光装置，包括：
壳体；
包括LED芯片的发光元件，所述LED芯片通过倒装置芯片连接方式安装在所述壳体内，所述LED芯片由GaN复合半导体形成；
磷光体，其可吸收由所述LED芯片发出的一部分光并发射出与所述吸收的光具有不同波长的光；和
注模部件，用该注模部件填充安装有LED芯片的壳体内部，所述注模部件包括包含所述磷光体的透明密封剂，
其特征在于，所述磷光体包括从碱土金属硅酸盐族中选择的成员，所述发光装置辐射白光，所述白光为所述由LED芯片发出的光与所述磷光体发出的光的混合光。
37.根据权利要求35或36所述的发光装置，其特征在于，
所述发光元件在其一侧具有p-侧电极和n-侧电极，设置在金属框架上，所述p-侧电极和所述n-侧电极的每一个被通过金丝进行线连接，所述发光元件经由所述金丝施加电压时发出蓝光。
38.根据权利要求35或36所述的发光装置，其特征在于，
所述发光元件设置在所述杯内，设置磷光体用于覆盖所述发光元件并位于所述杯的上边缘以下的位置。
39.根据权利要求1所述的发光装置，还包括：
保护元件，其用来防止所述发光元件受到静电的损坏。
40.根据权利要求39所述的发光装置，其特征在于：所述保护元件为齐纳二极管或电容器。
41.根据权利要求39所述的发光装置，其特征在于，所述保护元件为由齐纳二极管形成的次级底座，和
所述发光元件设置在所述次级底座上，所述磷光体覆盖所述发光元件的外周。
42.一种发光装置，包括：
GaN化合物半导体发光元件，其设置在座架引线(mount lead)的杯中；
磷光体，其可吸收部分由所述发光元件发出的光并发射出与所述吸收的光具有不同波长的光；和
注模部件，其覆盖所述发光元件和所述座架引线的尖端部分，
其特征在于，所述磷光体包括从碱土金属硅酸盐族中选择的成员，并包含在构成磷光体罩盖的树脂基材料中，所述磷光体罩盖覆盖所述注模部件。
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