CN1484865A - 电诱发纳米结构击穿的系统及方法 - Google Patents

电诱发纳米结构击穿的系统及方法 Download PDF

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CN1484865A
CN1484865A CNA018217087A CN01821708A CN1484865A CN 1484865 A CN1484865 A CN 1484865A CN A018217087 A CNA018217087 A CN A018217087A CN 01821708 A CN01821708 A CN 01821708A CN 1484865 A CN1484865 A CN 1484865A
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P·阿沃里斯
P·科林斯
ض�
R·马特尔
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GlobalFoundries Inc
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Abstract

一种方法被提供来形成一器件。该方法提供一绝缘衬底，其包含一源极电极，一漏极电极，及一栅极电极。该方法提供包含金属之碳纳米管束及半导电组分纳米管与该衬底接触。该方法施加一电压至该栅极电极，以耗尽该半导电组分纳米管之载流子，施加一电流经由该纳米管，由一源极电极至一漏极电极，及破裂至少一个金属组分纳米管，以形成一场效应晶体管。该碳纳米管束可以为一多层壁纳米管或一单层壁纳米管索。

Description

电诱发纳米结构击穿的系统及方法
发明领域
本发明涉及纳米结构，更明确地说，涉及一种电诱发纳米结构击穿的系统与方法。
发明背景
於分子纳米之领域中，少数材料展现成为纳米管之希望，特别是碳纳米管，其包含直径几埃之中空圆柱石墨。纳米管取决於纳米管之电气特性，可以作成很小之电子装置，例如二极管及晶体管。纳米管对於其尺寸，形状及物理特性均是独特的。结构上，一碳纳米管像碳被卷成为一圆柱之六角晶格。
除了於低温展现有趣量子行为外，碳纳米管展现了至少两项重要特性：一纳米管可以取决於其空间的螺旋特性(即构象几何)，而为金属或半导体。金属纳米管可以在定电阻率下，承载巨大之电流密度。半导电纳米管可以被电学上切换开及关，而成为场效应晶体管(FET)。此两类型可以共价结合(共享电子)。这些特点使得纳米管成为制作纳米尺寸之半导体电路的绝佳材料。
现行研究纳米管之方法系取决於金属及半导电纳米管的随机形成。於现行中并没有已知方法，以可靠地备制具有特定特性之纳米管，更谈不上备制纳米管展现出例如晶体管，二极管等之结行为。同时，这些藉由选择合成或後合成以作纳米管分离之已知方法，也完全未证明出有任何之成功。於此之前，纳米管必须由金属及半导电纳米管之混合中个别分离或必须被随机放置於予以研究之电极上。然而，於此等方法并未看到具有一致性。
此等纳米管之缺乏控制及复合成束的倾向已经阻碍了纳米管物理学之研究，并且，成为包含基于纳米管的电子技术的纳米管开发中之主要障碍。因此，需要有一种系统及方法，用以备制具有想要特性之纳米管。
发明概述
本发明提供一种形成一器件之方法，其包含步骤：提供一衬底，提供多个纳米管与该衬底接触，及使用一电流选择性地破裂一纳米管。优选该方法更包含步骤：用电流耗尽一半导电纳米管之载流子。
优选耗尽一半导电纳米管之多个载流子更包含步骤：施加一电压至衬底上一栅极电极。优选该方法包含施加电流经由该纳米管由一源极电极至一漏极电极。
优选该多个纳米管系为多层壁纳米管，其包含金属及半导电纳米管。优选该方法包括选择性破裂的步骤，选择性破裂的步骤包括破裂外部金属纳米管。
优选该多个纳米管为单层壁纳米管索，其包含金属及半导电纳米管，其中破裂的步骤包括破裂至少一个金属纳米管。
优选纳米管之密度系於一单层及百分之一覆盖率之十分之一之间。
优选该衬底为一绝缘体并包含金属垫片阵列。
优选衬底系为基于硅石的并包含金属垫片阵列。
优选每一垫片包含源极电极、漏极电极及栅极电极之一。
优选提供一衬底系藉由使用光刻术完成，以在一绝缘衬底上形成一垫片阵列，每一垫片包含一相应电极。
优选纳米管系为碳纳米管。
优选该方法还包括破裂多个杂散纳米管的步骤。
依据另一方面，本发明提供了一种修改一纳米管之至少一个特征之方法，该方法包含提供纳米管之混合体，及施加一电流至该混合体，诱发该纳米管混合体之选择击穿的步骤。优选该方法更包含由一半导电纳米管上去除载流子。
优选该电流选择地破裂金属纳米管。优选施加至该混合体之功率系约500∶W。
优选该纳米管为多层壁纳米管及单层壁纳米管索之一。
优选其特徵为直径、密度及电导之一。
优选该混合体包含金属及半导电纳米管。
优选该电流密度系大於109安每平方厘米。
依据另一方面，本发明提供了一种形成一器件之方法，该器件提供一绝缘衬底，其包含一源极电极，漏极电极，及一栅极电极，提供碳纳米管束，其包含有金属及半导电组分纳米管与衬底接触，其中诸纳米管系提供於约百分之一覆盖率之密度，该方法还包括施加一电压给栅极电极，以耗尽该半导电组分纳米管之载流子，由一源极电极施加一电流经纳米管至一漏极电极，并破裂至少一个金属组分纳米管，以形成一场效应晶体管。
优选该碳纳米管束可以为多层壁纳米管或单层壁纳米管索。
附图简述
本发明之较佳实施例将参考附图加以详细说明如下：
第1a，1b，及1c图为一纳米管及组成六角环之示意图；
第2a图为显示一多层壁纳米管之示意图；
第2b图显示一单层壁纳米管索之示意图；
第3图为於定电压时之多层壁纳米管之部份电击穿时间图表；
第4a图为一图表，显示由於每一击穿阶段之多层壁纳米管之最外壳之充电本质，造成之半导电及金属行为间之低偏压电导交替；
第4b图为一图表，显示於最後金属壳由多层壁纳米管上去除後，所残留之半导电壳之电导；
第4c图为一表格，显示於壳号，直径及相对带隙能量间之关系；
第5图为一图表，显示一多层壁纳米管之每一外壳之电流(I)对电压的关系；
第6a，6b，6c及6d图为分子导体(纳米管)随机混合体之几个转换成半导体场效应晶体管的例子；
第7a图为一图，显示一电极阵列；及
第7b图为一包含源极，漏极及栅极之基于单层壁纳米索之场效应晶体管的示意图。
发明详细说明
依据本发明提供一种永久地修改一多层壁纳米管(MWNT)或一单层壁纳米管(SWNT)索或束之方法。一纳米管取决於其空间的螺旋特性(即构象几何)，可以为金属或是半导体。两种类均可以於MWNT及SWNT中找到。依据本发明之方法使用电流感应电击穿，以消除具有一特定特徵之个别纳米管。该方法也能藉由改变组分纳米菅之比例，而调整一复合纳米管之特性。应注意的是，虽然本发明系使用基于碳的纳米管加以描述，但所例示之方法系可以适用於任何之任何分子结构中，其中只要电流可以选择性地施加至特定表面区域即可。例如，本发明可以用於氮化硼(BN)及基于金属二硫属化合物(MX2)之纳米结构。
碳纳米管可以忍受超出109安每平方厘米之电流密度，部份是由於碳-碳键之强度(例如对於单一C-C键之键强度约347kJ/mol)。然而，最後，於足够高电流时，纳米管将最後故障。例如，对於一MWNT，於空气中之故障发生於某一临限功率，例如约500∶W，超过该值会启始最外层之碳壳之快速氧化。功率系等於电流乘以电位差(即电压)。因为无缺陷石墨之热诱发氧化只进行於极端之高温，例如＞2000MC，所以，於依据本发明之启始击穿之主要因素为电流诱发缺陷的形成，自加热系为一第二影响。
参考第1a图，一纳米菅102包含碳或其他分子之六角晶格。当为碳时，环104可以被建立为包含六个碳彼此共价结合。第1b图显示一个别碳环，每一交接点106表示一个别碳原子，键结系被表示为107。可替换结构为硼-氮化物环，其一种形式系示於第1c图中。硼-氮化物环可以以另一配置下，包含三个硼原子，例如110，结合至三个氮原子，例如108。
藉由利用电流诱发缺陷的形成，一依据本发明之方法选择地破裂承载电流的纳米管，而不必影响平行的纳米管，当平行的纳米管承载很少或不承载电流时。例如，如於第2a图所示之MWNT有利於最外壳102，因为其系与外部电极(例如源极及漏极)直接接触。此分布可以使最内壳承载很少或未承载电流，而於电流诱发氧化时，保护它们。如於第2b图所示之SWNT索中，个别纳米管(例如102)系被平行排放。经由SWNT索之电流分布系较经过一MWNT者更均匀，因为SWNT索之个别纳米管可以同时与外部电极作良好接触。
一般而言，并没有理由使电流独厚一些SWNT，然而，依据本发明之一实施例，一静电耦合栅极电极可以选择地耗尽组分半导电纳米管之其载流子。换句话说，对於跨越一源极电极及一漏极电极之SWNT或MWNT，藉由施加一电压至一相应栅极电极，载流子可以由组分半导电纳米管中排出。一旦耗尽後，半导电纳米管系被保护不受伤害，及源极电极所施加至SWNT或MWNT之高电流密度可以被用以启始组分金属纳米管之氧化。因此，这些方法可以保护於一SWNT索中之半导电纳米管及一外部半导电MWNT外壳。
碳纳米管之由这些复合导体去除可以被以电学上及显微镜加以观察。电学上，一单一碳纳米管之击穿造成一部份电导下降，典型系完成於几毫秒内。当加压於足够高偏压时，多数独立下降发生，因为一碳壳接著另一碳壳地破裂。用於击穿中之电子系能控制已破裂之纳米管之数量。於电流中该出一下降例如约19∶A时，诸电子仪器能停止击穿过程，因而控制所展现之特徵。
参考第3图，以定电压应力之MWNT之部份电击穿进行一连串之分立步骤，诸步骤相对应於MWNT之八个个别层之损失。这些结果系以约450∶W之功率，及约2伏之电位差时取得。每壳之约19∶A电流之正常击穿可以於第3图中看出。一部份击穿MWNT之半径的降低系等於内壳间距(0.34纳米)乘以所完成击穿步骤之数量。一类似薄化可以以具有金属SWNT之SWNT束被选择地破裂，只留下半导电SWNT加以完成。
击穿系藉由纳米管对外部应力之敏感度加以协助，因为相当小电场及电流可以作用个别分子。例如，一直径1纳米之半导电纳米管可以为几百纳米之栅极电极所静电地耗尽电载流子。电流密度(足够以作用纳米管击穿)作为触媒剂，并启始於纳米管及周围气体间之化学反应。例如，对於空气中之碳纳米管，反应可以被写成为：
。
本发明同时考量其他环境，其中非破坏性电流协助之反应可以化学地修改特定纳米管。所得装置可以加入电开关及化学敏感性。例如，使用纳米管之敏感性至各种气体上，化学修改可以用於一化学纳米传感器之范围中，其中，纳米传感器(纳米管)之导电率变化通知一特定气体的出现。
纳米管之受控破坏允许了半导电SWNT自SWNT之混合体(包含金属及半导电SWNT)中分离及基于纳米管之场效应晶体管(FET)之备制。应注意的是，於此所述之各种方法可以取决於纳米管之特性及衬底设计，而用以备制晶体管(例如，FET)，二极管，及电阻器。
基本上，本制程可以促成复杂电子结构之研究及MWNT及SWNT索之传送特性。藉由移除於个别传导步骤发生时之应力(电流)，这些复合纳米线可以於每一构成导体(纳米管)之损失时，再被特徵化。例如，特徵化系表示於一击穿处理中，由一阶段至另一阶段时之NWNT或SWNT索之导电特性。例如，多个互补传送测量可以越来越深探测进入MWNT之更内壳中，允许特徵化，及经由每一壳之传送的直接比较。
一MWNT之不同壳系被假定以随机方式交替於金属及半导电之间。这可以藉由使用受控击穿随後以低偏压或低温测量加以直接测试，该测量探测一MWNT之最外壳。於SWNT上之先前测量後，半导电及金属壳可以藉由使用一相当小之10毫伏源-漏极偏压，而测量电导G成为栅电压Vg之函数加以区分。一金属壳系特徵於一G，其系无关於Vg，或接近如此，而一半导电壳可以为该栅极所静电耗尽载流子。
参考第4a图，藉由停止於每一击穿事件上之应力，一MWNT可以於每一组成壳之损失後加以特徵化。第4a图显示由於於每一击穿阶段中之最外壳之变化的本质，低偏压电导(G(Vg))交替於半导电(例如402及406)及金属(例如404)行为之间。於第4b图中，当最後金属壳(n-9)被去除时，残留半导电壳可以完全地耗尽，以给予零电导之区域。将於G(Vg)中之所示峰值相应於电导及共价带边缘，不同壳之带隙可以决定在一定值或一比例内。基於期待直径依附关系之计算符合相对宽度系如於第4c图所示，其中参数只为管之启始直径及於相关壳间之0.34纳米之间距。
第4a图显示於一WMNT内之各种不同层之室温G(Vg)。开始时，MWNT具有9.5纳米之直径，n外壳，及一金属G(Vg)。第4a图显示於移除三层壳402後所看到之G(Vg)中之强列调变。去除一第四层壳造成一金属G(Vg)404，及去除第六层壳产生另一半导电G(Vg)406。此交替系被解释为被移除之碳壳之交替特性之签章。
对於一特定半导电壳之G不下降至零之因素为内金属壳之贡献之故，该内金属壳持续导电。壳n-3及n-4展现：对於壳n-3之G(Vg)曲线之耗尽最小值与下层之壳n-4 408之电导相重合。於此时，外半导电壳n-3可以为栅极所完全地耗尽，但所测量之电导包含经由下层金属壳之泄漏。其他测量显示此泄漏於低温中被强力地冻结，低偏压限制表示壳间之耦合被热激活。MWNT及SWNT索之逐渐薄化可以用例如具击穿步阶数及於视直径上之变化间之线性相依性之原子力及扫描电子显微镜加以解析。
於移除第十碳壳时，MWNT开始表现出如同一完美本征场效应晶体管(FET)，由於载流子之完全耗尽，即使於室温具有零电导之区域(例如第4b图)。虽然所用之SWNT系为强p-型并没有对称之G(Vg)特徵，但类似特徵可以於个别半导电SWNT中找到。MWNT之完全耗尽表示未残留金属壳，并且，此行为持续，直到第十四碳壳被移除为止，於此时，MWNT电路开路。基於接近0.34纳米之已知壳间间距，配合一壳一壳地计数，一此直径之MWNT可以具有至多14壳。
第4b图显示当最後半导电壳被去除时，零电导区域之逐渐增加。此区域之宽度系成比例於半导体之能带隙(需要破坏一键结之能量)，电导於能隙上下分别由於电子状及空穴状载流子而导通。由於使用高压脉冲以破裂各壳，捕获电荷之一些重新排列发生於下层之SiO2衬底上。为了简化於各壳间之比较，示於第4b图之曲线系以接近Vg＝0处为中心。半导电碳纳米管之特徵系在於能带隙之能量系反比於直径，使得逐渐变小之碳壳展现更大之能带隙，能带隙之宽度决定了材料之类型(导体，半导体，绝缘体)。只使用启始MWNT直径及壳间间距，於最内壳之能带隙间之期待比例可以被计算出来。如於第4c图所示，这些比例符合於电导间隙之任一侧上之电导峰值所定义并如第4c图所示之实验比例。
现参考第5图，藉由损失个别外壳後重新特徵化MWNT，每一壳对I-V之贡献可以加以决定。基於I-V顺序之均匀间距，每一壳於相同电流饱和，及所有壳均於中及高偏压下对导通有所贡献。虚线表示I-V未被取得之位置。选定的I-V之半对数图表示出，由於在最内壳及外电极间之有效阻障之故，最内壳有一朝向指数I-V之倾向。类似阻障也於所有壳中扮演类似角色，除了最外之外壳外，并且，解释於部份MWNT所看到之非线性而非其它。
第5图显示一系列高偏压电流-电压特性(I-V)之结果，其有效地重新特徵化具有n，n-1，n-2等壳之MWNT，直到残留单一壳为止。高偏压I-V必须於高真空中取得，例如＜1毫巴或於一惰性环境中取得，以抑制有害之氧化。於每一曲线间，MWNT被曝露至空气中，以可控制地移除单一碳壳。四探针及两探针测量法系被周期地比较，以监视每一纳米管之接触电阻(Rc)。於此所示之系为经由一连串之测量，展现几千欧姆之定Rc的样品。具有高Rc之样品相反於於此所述之一壳一壳机制，倾向於接触时故障。每一I-V显示於一稳定增加偏压处之电流饱和，类似於个别SWNT所看到者，但其系於相当高之电流。由MWNT移除每一外壳配合第3图似乎会降低此饱和程度约20微安之固定量。此一阶一阶地降低清楚地表示一高偏压，表示所有MWNT壳均对传送及饱和有相等之贡献。
除了电流饱和值之降低外，当诸外壳被移除时，於第5图中之I-V结果同时也展现增加非线性之情形。所选择之I-V之半对数图显示由一线性I-V朝向形式I＝Aexp(V/V0)之指数特徵的倾向，其中V0＝0.50伏。明显地，一隧穿势垒支配最内壳之I-V，更可能因为这些壳只可以经由一由很多石墨层所构成之势垒而耦合至外部电极之故。对於未与电极直接接触之中间壳，由於深度有关之势垒与纳米管之本征纵长I-V特徵串联之故，所量得之I-V之不规则形状可以定性了解。此串联势垒解释了到达如於第5图所示之电流饱和之所需偏压的逐渐增加。再者，於此所看到线性至非线性I-V转移及於文献中之类似非线性I-V之丰度建议传输实验经常并不直接关连一MWNT之承载电流之碳壳，而以透射电子显微镜观看，接触部份或不完全之外壳。
第4a、4b、4c及5图确认MWNT壳之变化本质，定性检测於这些壳间之耦合，及试图隔离一单一外壳之对整个电导之贡献。直到现在，理论及实验已经分散於这些观点上。一方面，MWNT太复杂而无法实现理论上之实际模型化，另一方面，并没有实验可以直接探测内碳壳。於此引入之受控击穿之强有力的技术潜在地对进入这些复杂导体之传送特性提供新的视野。另外，一MWNT可以选择地被转换於金属及具有不同能带隙之半导体之间。
於此所述用於MWNT之方法可以应用至SWNT索。虽然MWNT及SWNT均为复合纳米管，但SWNT展现一些不同。例如，於一索内之多数SWNT可以接触其潜在氧化环境，允许很多碳外壳同时故障，而不是於MWNT所看到之均匀之一壳一壳地故障(例如第3图)。另外，於一索内之诸SWNT并不会如於MWNT之外壳般有效地彼此作静电屏蔽。结果，於一索中之击穿可以藉由耗尽半导体SWNT之载流子，而直接只进行於金属SWNT中(於此时，於施加应力以耗尽主要为p型SWNT之载流子时，Vg被保持为+10伏)。於基于碳的SWNT中之载流子密度可以范围由约100至约1000电子∶m。另一不同是於一小索中之每一SWNT个别地连接至外部电极。因此，不同於MWNT，一索可以被模型化为一独立平行导体，其具有总电导G(Vg)＝Gm+Gs(Vg)，其中Gm为金属纳米管之作用，及Gs为半导电纳米管之栅有关的电导。
参考第6a及6b图，藉由施加应力至包含半导电及金属SWNT之混合体之SWNT索，同时对该束加栅极电压，则於金属SWNT之选择性击穿中，半导体之载流子被耗尽。此启始SWNT束602及606包含金属及半导电SWNT，同时，被减薄之SWNT束604及608包含半导电SWNT之相当高之比例。同样地，MWNT之半导电纳米管壳可以被有效地绝缘，藉由使用类似於SWNT所用之类似方法，而耗尽诸壳之载流子。因此，一MWNT之击穿可以被控制，以取得想要之特徵(例如金属或半导电性质)。复合纳米管之选择击穿可以藉由金属及半导电纳米管於栅极电压上之相关依附性而加以解释。金属纳米管之电导显示与栅极电压很低之依附性，但，半导电纳米管之电导则显示与栅极电压很强之依附性。
因此，如於第6a及6b图所示，在正栅极电压，SWNT之电导接近於零，而於负栅极电压，当载流子增加，电导增加。第6a及6b图描绘分别於受控击穿前及後，两小SWNT索之G(Vg)。如同於MWNT之情况，不受干扰之样品具有一电导，其可以部份地为栅极电极所调变。当於索中之金属SWNT被破坏时，下层电导Gm降低至零。相反地，调变Gs范围并未改变。测量显示出，藉由於击穿处理时，耗尽该半导电SWNT之载流子，它们可以有效地防止受破坏。此结果建议於索中之不同SWNT间之很少电子相互作用。测量G(Vg)之温度相关之变化可以针对相互作用的观点并决定能量范围为何，若有的话，此等相互作用变得很重要。
於不受影响之半导电SWNT中，G(Vg)曲线系依据金属SWNT之贡献，而快速地向下位移。参考第6c图，即使对於含百计之SWNT之很大索，这些样品可以有效地被转换为FET。然而，於此时，Gm之逐渐降低在其到达零之前停止，可能因为於索中之核心处之金属SWNT系为半导电SWNT所包围之故。这些弱耦合金属SWNT之最终破坏需要较高电压，并可能牺牲部份周围之半导电SWNT。结果，具有很多半导电通道及一大启始调变Gs＞10μS之索可能只造成具有Gs～1μS之FET。
除了对研究MWNT及SWNT相互作用有用外，受控击穿技术系极端有用於基于纳米管之电子装置的制造。直到现在，SWNT FET已经被个别地制造。典型地，很低之表面覆盖率已经确保於此密度中，至多一个SWNT连接一源极及漏极电极，最有希望电路保持断路，但部份则加入一金属SWNT，而其他则具有一半导电SWNT。
虽然此技术已经证明对SWNT特性之启始特徵化有价值，但实际应用需要很多装置平行地可靠地生产。例如，完成密集封装之FET需要於足够密度之纯半导电SWNT互连於所有想要位置。纳米管可以以已知技术，例如以化学气相淀积之原位成长或外部成长及淀积加以提供。高表面密度有利於多重SWNT，而由於SWNT特性之可变性，SWNT索系为金属管所支配，无用于半导体通道。於现在，并没有方法可以合成纯半导电SWNT或用以由SWNT混合体中分离开半导电SWNT。
参考第7a图，显示出一使用标准光刻术制造之小阵列之可独立寻址之SWNT FET。一阵列之金属垫片(例如701)系被提供，每一垫片包含一源极704，漏极706或栅极电极702。用於这些垫片之衬底可以是任何之绝缘材料，较佳系为基于硅石。衬底及金属垫片之组合系被称为用於纳米管之衬底。每一FET包含一源极，一漏极，一栅极，及连接该源极及漏极之至少一纳米管。诸纳米管系被提供以连接每一源极至一相关漏极。参考第7b图，一栅极氧化物708将栅极702与电极(704，706)分离。SWNT密度可以被调整，以确保至少一索(例如710)短路每一组电极，同时最小化於装置间之不想要的连接。较佳地，纳米管之密度没有厚度，例如低於一单层或100％覆盖率。部份结果显示低於百分之一1之密度系足以确保每一源极-漏极对被至少一纳米管所连接，虽然密度低至约衬底之千分之一也可以提供连接性给一阵列中之每一源极-漏极对。於源极及漏极电极间之索(例如710)系藉由选择性地击穿金属纳米管，而被转换为FET，而杂散纳米管系藉由完成击穿而被整个移除。
虽然，因为其金属构成之故，这些索开始时显示很低或是没有切换，但最後，可以可靠地获得如於第6d图所示之具良好FET特徵之器件。部份结果显示，SWNT FET之生产可以由无序之启始材料，以大於90％之确定性加以完成。第6d图总结加入一或多数SWNT索之三十二个器件之结果。於修改前，例如610，个别索之电导由於索大小之分布及接触作用，而广泛地变化，几乎没有器件可以为栅极所基本上耗尽。
於破裂金属SWNT时，每一索之电导被降低，但残留之通道只有半导电的并可被完全地耗尽。所得器件可以具有主要为接触电阻所限制之合理的FET特徵，该接触电阻将分开说明。多数小的SWNT束可以藉由化学气相生长而产生，并可以减轻大束所遭遇的困难，并造成具有优良导电率及切换比率之FET。
虽然本申请系针对於碳纳米管之特定系统，但相同原理可以广泛地适用至各种分子电子学系统中。一般而言，分子器件阵列可以藉由使用外部电气机构之设计加以生产，而不必纳米规格之实际控制。任意修改允许由一随机混合体定义有用电子元件。虽然此解决方案已经应用以解决碳纳米管之固有变化的问题，但本领域技术人员可以以本揭示得知，类似结果可以使用其他分子之混合体加以完成。
由於已经说明使用电击穿以作出碳纳米管及纳米管电路的系统及方法的实施例，吾人可以应知道各种修改及变化可以由上述教导而由本领域技术人员所完成。因此，可以了解的是，应可以对於此所揭示之本发明之实施例作出仍在所附权利要求所定义之本发明之范围及精神内之各种变化。本发明系依此明述诸细节及为专利法所要求之细节，但本发明所要求及为专利证书所保护者系於所附权利要求中。

Claims (11)

1.一种用以形成一器件之方法，该方法包含步骤：
提供一衬底；
提供多个纳米管与该衬底接触；及
使用一电流以选择性地破裂一纳米管。
2.如权利要求1所述之方法，其中该衬底是绝缘衬底。
3.如权利要求1所述之方法，更包含耗尽一半导电纳米管之多个载流子之步骤。
4.如权利要求3所述之方法，其中上述之耗尽一半导电纳米管之多个载流子之步骤更包含施加一电压至衬底上一栅极电极之步骤。
5.如权利要求4所述之方法，更包含经由该纳米管，施加该电流由一源极电极至一漏极电极的步骤。
6.如权利要求1所述之方法，其中上述之多个纳米管系为单层壁纳米管索或多层壁纳米管，其包含金属及半导电纳米管。
7.如权利要求6所述之方法，其中上述之选择性地破裂的步骤包含破裂一外金属纳米管、或破裂至少一个金属纳米管或破裂多个杂散纳米管。
8.如权利要求1所述之方法，其中上述纳米管为碳纳米管。
9.一种修改一纳米管之至少一种特徵的方法，该方法包含步骤：
提供纳米管之混合体；及
施加一电流至该混合体，诱发该纳米管混合体之选择击穿。
10.如权利要求9所述之方法，更包含步骤由一半导电纳米管移除多数载流子。
11.如权利要求10所述之方法，其中上述之电流选择性地破裂诸金属纳米管。
12.一种形成一器件之方法，该方法至少包含步骤：
提供一绝缘衬底，其包含一源极电极，一漏极电极，及一栅极电极；
提供多个碳纳米管束，其包含金属及半导电组分纳米管与衬底接触，其中诸纳米管系提供於约百分之一覆盖率之密度；
施加一电压至该栅极电极，以使半导电组分纳米管之多个载流子耗尽；
施加一电流经由该纳米管，由一源极电极至一漏极电极；及
破裂至少一个金属组分纳米管，以形成一场效应晶体管。
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CN101625466B (zh) * 2008-07-09 2012-12-19 清华大学 触摸式液晶显示屏
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US9077793B2 (en) 2009-06-12 2015-07-07 Tsinghua University Carbon nanotube based flexible mobile phone
CN105474006A (zh) * 2013-05-29 2016-04-06 Csir公司 场效应晶体管和包括多个场效应晶体管的气体检测器
CN105097939A (zh) * 2014-04-24 2015-11-25 清华大学 薄膜晶体管
CN105097939B (zh) * 2014-04-24 2018-08-17 清华大学 薄膜晶体管

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MY127407A (en) 2006-11-30
US6423583B1 (en) 2002-07-23
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IL156523A (en) 2007-05-15
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