CN1466807A - 用于充电泵的负反馈负载温度校正 - Google Patents
用于充电泵的负反馈负载温度校正 Download PDFInfo
- Publication number
- CN1466807A CN1466807A CNA018164196A CN01816419A CN1466807A CN 1466807 A CN1466807 A CN 1466807A CN A018164196 A CNA018164196 A CN A018164196A CN 01816419 A CN01816419 A CN 01816419A CN 1466807 A CN1466807 A CN 1466807A
- Authority
- CN
- China
- Prior art keywords
- circuit
- voltage
- resistor
- bias
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/670,850 | 2000-09-27 | ||
US09/670,850 US6356062B1 (en) | 2000-09-27 | 2000-09-27 | Degenerative load temperature correction for charge pumps |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1466807A true CN1466807A (zh) | 2004-01-07 |
CN1230969C CN1230969C (zh) | 2005-12-07 |
Family
ID=24692146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018164196A Expired - Lifetime CN1230969C (zh) | 2000-09-27 | 2001-09-25 | 调节器电路、调节器系统和调节方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6356062B1 (zh) |
EP (1) | EP1323226B1 (zh) |
KR (1) | KR100548910B1 (zh) |
CN (1) | CN1230969C (zh) |
AT (1) | ATE431008T1 (zh) |
AU (1) | AU2001294760A1 (zh) |
DE (1) | DE60138633D1 (zh) |
TW (1) | TW538574B (zh) |
WO (1) | WO2002027903A2 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103294094A (zh) * | 2012-03-02 | 2013-09-11 | 联咏科技股份有限公司 | 充电帮浦装置及其驱动能力调整方法 |
CN104143907A (zh) * | 2014-08-15 | 2014-11-12 | 中国科学院微电子研究所 | 非连续性电流控制的双环电荷泵控制电路 |
US9007121B2 (en) | 2012-02-24 | 2015-04-14 | Novatek Microelectronics Corp. | Charge pump device |
CN105337496A (zh) * | 2014-05-29 | 2016-02-17 | 展讯通信(上海)有限公司 | 基于压控振荡器的脉冲频率调制电路 |
CN109584914A (zh) * | 2013-03-15 | 2019-04-05 | 硅存储技术公司 | 用于闪存存储器装置的混合电荷泵以及调节手段和方法 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6617832B1 (en) * | 2002-06-03 | 2003-09-09 | Texas Instruments Incorporated | Low ripple scalable DC-to-DC converter circuit |
US7136304B2 (en) | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US7178004B2 (en) | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
JP3688689B2 (ja) * | 2003-04-22 | 2005-08-31 | 株式会社東芝 | Dc−dcコンバータ |
US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
US7064529B2 (en) * | 2003-09-17 | 2006-06-20 | Atmel Corporation | Dual stage voltage regulation circuit |
US7638850B2 (en) | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
US7205805B1 (en) | 2004-11-02 | 2007-04-17 | Western Digital Technologies, Inc. | Adjusting power consumption of digital circuitry relative to critical path circuit having the largest propagation delay error |
US7129763B1 (en) | 2004-11-08 | 2006-10-31 | Western Digital Technologies, Inc. | Adjusting power consumption of digital circuitry by generating frequency error representing error in propagation delay |
JP2008527956A (ja) * | 2004-12-30 | 2008-07-24 | エヌエックスピー ビー ヴィ | チャージポンプの外部コンデンサに依存する温度の監視及びそれに基づく向上したチャージポンプ |
US20060181340A1 (en) * | 2005-02-17 | 2006-08-17 | Zywyn Corporation | Regulating charge pump |
KR100752643B1 (ko) * | 2005-03-14 | 2007-08-29 | 삼성전자주식회사 | 입력 전압에 적응적으로 제어되는 전압 승압 장치 |
US7804126B2 (en) | 2005-07-18 | 2010-09-28 | Saifun Semiconductors Ltd. | Dense non-volatile memory array and method of fabrication |
US7221138B2 (en) * | 2005-09-27 | 2007-05-22 | Saifun Semiconductors Ltd | Method and apparatus for measuring charge pump output current |
US7808818B2 (en) | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
US7760554B2 (en) | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
US7692961B2 (en) | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
US7486060B1 (en) | 2006-03-30 | 2009-02-03 | Western Digital Technologies, Inc. | Switching voltage regulator comprising a cycle comparator for dynamic voltage scaling |
US7701779B2 (en) | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
US7551383B1 (en) | 2006-06-28 | 2009-06-23 | Western Digital Technologies, Inc. | Adjusting voltage delivered to disk drive circuitry based on a selected zone |
DE102006036546A1 (de) * | 2006-08-04 | 2008-02-21 | Qimonda Flash Gmbh & Co. Kg | Kapazitätsladestrombegrenzungseinrichtung, Ladungspumpenanordnung, Verfahren zum Begrenzen eines Ladestromes an einer Ladungspumpe und Verfahren zum Begrenzen des Ladestromes an einen Kondensator |
US7330019B1 (en) | 2006-10-31 | 2008-02-12 | Western Digital Technologies, Inc. | Adjusting on-time for a discontinuous switching voltage regulator |
US7733189B1 (en) | 2007-09-14 | 2010-06-08 | Western Digital Technologies, Inc. | Oscillator comprising foldover detection |
US7944277B1 (en) * | 2008-01-04 | 2011-05-17 | Marvell International Ltd. | Circuit and methods of adaptive charge-pump regulation |
US8085020B1 (en) | 2008-06-13 | 2011-12-27 | Western Digital Technologies, Inc. | Switching voltage regulator employing dynamic voltage scaling with hysteretic comparator |
JP5072731B2 (ja) * | 2008-06-23 | 2012-11-14 | 株式会社東芝 | 定電圧昇圧電源 |
US9660590B2 (en) | 2008-07-18 | 2017-05-23 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
US8994452B2 (en) | 2008-07-18 | 2015-03-31 | Peregrine Semiconductor Corporation | Low-noise high efficiency bias generation circuits and method |
CN101771340B (zh) * | 2008-12-31 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | 电荷泵 |
US8120412B2 (en) * | 2009-08-07 | 2012-02-21 | Freescale Semiconductor, Inc. | Voltage boosting system with slew rate control and method thereof |
US8937404B1 (en) | 2010-08-23 | 2015-01-20 | Western Digital Technologies, Inc. | Data storage device comprising dual mode independent/parallel voltage regulators |
US8339185B2 (en) | 2010-12-20 | 2012-12-25 | Sandisk 3D Llc | Charge pump system that dynamically selects number of active stages |
US8686787B2 (en) | 2011-05-11 | 2014-04-01 | Peregrine Semiconductor Corporation | High voltage ring pump with inverter stages and voltage boosting stages |
US9413362B2 (en) | 2011-01-18 | 2016-08-09 | Peregrine Semiconductor Corporation | Differential charge pump |
US8836412B2 (en) | 2013-02-11 | 2014-09-16 | Sandisk 3D Llc | Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple |
US8981835B2 (en) | 2013-06-18 | 2015-03-17 | Sandisk Technologies Inc. | Efficient voltage doubler |
US9024680B2 (en) | 2013-06-24 | 2015-05-05 | Sandisk Technologies Inc. | Efficiency for charge pumps with low supply voltages |
US9077238B2 (en) | 2013-06-25 | 2015-07-07 | SanDisk Technologies, Inc. | Capacitive regulation of charge pumps without refresh operation interruption |
US9007046B2 (en) | 2013-06-27 | 2015-04-14 | Sandisk Technologies Inc. | Efficient high voltage bias regulation circuit |
US9083231B2 (en) | 2013-09-30 | 2015-07-14 | Sandisk Technologies Inc. | Amplitude modulation for pass gate to improve charge pump efficiency |
US9154027B2 (en) * | 2013-12-09 | 2015-10-06 | Sandisk Technologies Inc. | Dynamic load matching charge pump for reduced current consumption |
US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
US9647536B2 (en) | 2015-07-28 | 2017-05-09 | Sandisk Technologies Llc | High voltage generation using low voltage devices |
US9520776B1 (en) | 2015-09-18 | 2016-12-13 | Sandisk Technologies Llc | Selective body bias for charge pump transfer switches |
US10637351B2 (en) | 2016-07-25 | 2020-04-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Regulated voltage systems and methods using intrinsically varied process characteristics |
CN114400888B (zh) * | 2022-01-25 | 2023-10-10 | 无锡英迪芯微电子科技股份有限公司 | 一种自适应混合线性调制和频率调制的电荷泵电路 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3171674D1 (en) * | 1980-04-28 | 1985-09-12 | Fujitsu Ltd | Temperature compensating voltage generator circuit |
GB2121629B (en) * | 1982-05-18 | 1985-10-23 | Standard Telephones Cables Ltd | Temperature controlled crystal oscillator |
JPH07120946B2 (ja) * | 1985-06-25 | 1995-12-20 | キヤノン株式会社 | 位相同期回路 |
US4823070A (en) * | 1986-11-18 | 1989-04-18 | Linear Technology Corporation | Switching voltage regulator circuit |
US4825142A (en) * | 1987-06-01 | 1989-04-25 | Texas Instruments Incorporated | CMOS substrate charge pump voltage regulator |
US5670907A (en) * | 1995-03-14 | 1997-09-23 | Lattice Semiconductor Corporation | VBB reference for pumped substrates |
US5963105A (en) * | 1997-07-31 | 1999-10-05 | Dallas Semiconductor Corporation | Trimmable circuitry for providing compensation for the temperature coefficients of a voltage controlled crystal-less oscillator |
JP4060424B2 (ja) * | 1998-02-03 | 2008-03-12 | 沖電気工業株式会社 | チャージポンプ回路の駆動回路 |
-
2000
- 2000-09-27 US US09/670,850 patent/US6356062B1/en not_active Expired - Fee Related
-
2001
- 2001-09-25 AT AT01975434T patent/ATE431008T1/de not_active IP Right Cessation
- 2001-09-25 AU AU2001294760A patent/AU2001294760A1/en not_active Abandoned
- 2001-09-25 WO PCT/US2001/030156 patent/WO2002027903A2/en active IP Right Grant
- 2001-09-25 CN CNB018164196A patent/CN1230969C/zh not_active Expired - Lifetime
- 2001-09-25 DE DE60138633T patent/DE60138633D1/de not_active Expired - Lifetime
- 2001-09-25 EP EP01975434A patent/EP1323226B1/en not_active Expired - Lifetime
- 2001-09-27 TW TW090123932A patent/TW538574B/zh not_active IP Right Cessation
-
2003
- 2003-03-26 KR KR1020037004397A patent/KR100548910B1/ko active IP Right Grant
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9007121B2 (en) | 2012-02-24 | 2015-04-14 | Novatek Microelectronics Corp. | Charge pump device |
US9395728B2 (en) | 2012-02-24 | 2016-07-19 | Novatek Microelectronics Corp. | Charge pump device and driving capability adjustment method thereof |
CN103294094A (zh) * | 2012-03-02 | 2013-09-11 | 联咏科技股份有限公司 | 充电帮浦装置及其驱动能力调整方法 |
CN103294094B (zh) * | 2012-03-02 | 2016-01-20 | 联咏科技股份有限公司 | 充电帮浦装置及其驱动能力调整方法 |
CN109584914A (zh) * | 2013-03-15 | 2019-04-05 | 硅存储技术公司 | 用于闪存存储器装置的混合电荷泵以及调节手段和方法 |
CN109584914B (zh) * | 2013-03-15 | 2023-05-09 | 硅存储技术公司 | 用于闪存存储器装置的混合电荷泵以及调节手段和方法 |
CN105337496A (zh) * | 2014-05-29 | 2016-02-17 | 展讯通信(上海)有限公司 | 基于压控振荡器的脉冲频率调制电路 |
CN105337496B (zh) * | 2014-05-29 | 2019-06-25 | 展讯通信(上海)有限公司 | 基于压控振荡器的脉冲频率调制电路 |
CN104143907A (zh) * | 2014-08-15 | 2014-11-12 | 中国科学院微电子研究所 | 非连续性电流控制的双环电荷泵控制电路 |
CN104143907B (zh) * | 2014-08-15 | 2017-10-31 | 中国科学院微电子研究所 | 非连续性电流控制的双环电荷泵控制电路 |
Also Published As
Publication number | Publication date |
---|---|
WO2002027903A2 (en) | 2002-04-04 |
KR20030043974A (ko) | 2003-06-02 |
WO2002027903A3 (en) | 2002-08-29 |
AU2001294760A1 (en) | 2002-04-08 |
DE60138633D1 (de) | 2009-06-18 |
KR100548910B1 (ko) | 2006-02-02 |
EP1323226B1 (en) | 2009-05-06 |
ATE431008T1 (de) | 2009-05-15 |
TW538574B (en) | 2003-06-21 |
CN1230969C (zh) | 2005-12-07 |
EP1323226A2 (en) | 2003-07-02 |
US6356062B1 (en) | 2002-03-12 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180320 Address after: Idaho Patentee after: MICRON TECHNOLOGY, Inc. Address before: Swiss Rolle Patentee before: Nomonks GmbH Effective date of registration: 20180320 Address after: Swiss Rolle Patentee after: Nomonks GmbH Address before: California, USA Patentee before: INTEL Corp. |
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CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20051207 |