CN1448987A - 半导体装置以及其制造方法、电光学装置和电子机器 - Google Patents
半导体装置以及其制造方法、电光学装置和电子机器 Download PDFInfo
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- CN1448987A CN1448987A CN03108294A CN03108294A CN1448987A CN 1448987 A CN1448987 A CN 1448987A CN 03108294 A CN03108294 A CN 03108294A CN 03108294 A CN03108294 A CN 03108294A CN 1448987 A CN1448987 A CN 1448987A
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JP200376904 | 2003-03-20 | ||
JP2003076904A JP4329368B2 (ja) | 2002-03-28 | 2003-03-20 | 半導体装置及びその製造方法 |
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JP (1) | JP4329368B2 (zh) |
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US7585703B2 (en) * | 2002-11-19 | 2009-09-08 | Ishikawa Seisakusho, Ltd. | Pixel control element selection transfer method, pixel control device mounting device used for pixel control element selection transfer method, wiring formation method after pixel control element transfer, and planar display substrate |
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Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4548470A (en) * | 1984-06-11 | 1985-10-22 | Apogee, Inc. | Projection screen |
JP2794499B2 (ja) * | 1991-03-26 | 1998-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
GB9106720D0 (en) | 1991-03-28 | 1991-05-15 | Secr Defence | Large area liquid crystal displays |
JPH05127605A (ja) * | 1991-04-23 | 1993-05-25 | Hitachi Ltd | 大画面液晶表示装置 |
JP3131354B2 (ja) | 1994-09-02 | 2001-01-31 | シャープ株式会社 | 液晶表示装置 |
US5834327A (en) * | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
JP4619462B2 (ja) | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
KR100229676B1 (ko) * | 1996-08-30 | 1999-11-15 | 구자홍 | 셀프얼라인 박막트랜지스터 제조방법 |
CN1179228C (zh) * | 1997-12-25 | 2004-12-08 | 夏普公司 | 液晶显示装置 |
JPH11272209A (ja) | 1998-01-30 | 1999-10-08 | Hewlett Packard Co <Hp> | 表示用集積回路ビデオ・タイル |
JP4126747B2 (ja) | 1998-02-27 | 2008-07-30 | セイコーエプソン株式会社 | 3次元デバイスの製造方法 |
FR2781925B1 (fr) * | 1998-07-30 | 2001-11-23 | Commissariat Energie Atomique | Transfert selectif d'elements d'un support vers un autre support |
CN1262499A (zh) * | 1999-01-29 | 2000-08-09 | 张云祥 | 液晶组合式大型彩色显示器 |
JP3539555B2 (ja) * | 1999-10-21 | 2004-07-07 | シャープ株式会社 | 液晶表示装置 |
JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
US6855384B1 (en) * | 2000-09-15 | 2005-02-15 | 3M Innovative Properties Company | Selective thermal transfer of light emitting polymer blends |
EP1313149A1 (en) * | 2001-11-14 | 2003-05-21 | STMicroelectronics S.r.l. | Process for fabricating a dual charge storage location memory cell |
KR100662780B1 (ko) * | 2002-12-18 | 2007-01-02 | 엘지.필립스 엘시디 주식회사 | 테스트화소를 구비한 액정표시장치 및 이를 이용한 블랙 매트릭스를 제작하는 방법 |
-
2003
- 2003-03-20 US US10/392,191 patent/US7101729B2/en not_active Expired - Lifetime
- 2003-03-20 JP JP2003076904A patent/JP4329368B2/ja not_active Expired - Fee Related
- 2003-03-27 CN CNB031082947A patent/CN100339939C/zh not_active Expired - Lifetime
- 2003-03-27 TW TW092106986A patent/TWI239078B/zh not_active IP Right Cessation
- 2003-03-27 KR KR10-2003-0019123A patent/KR100515774B1/ko active IP Right Grant
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US9515025B2 (en) | 2004-06-04 | 2016-12-06 | The Board Of Trustees Of The University Of Illinois | Stretchable form of single crystal silicon for high performance electronics on rubber substrates |
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CN101556966B (zh) * | 2008-04-10 | 2010-12-15 | 中芯国际集成电路制造(上海)有限公司 | 一种可减小等离子体损伤效应的mos管 |
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CN104134679B (zh) * | 2013-04-30 | 2017-04-12 | 乐金显示有限公司 | 有机发光二极管显示装置及其制造方法 |
CN112542468A (zh) * | 2016-07-05 | 2021-03-23 | 群创光电股份有限公司 | 显示装置 |
CN110518054A (zh) * | 2019-03-05 | 2019-11-29 | 友达光电股份有限公司 | 显示装置及其制造方法 |
CN110518054B (zh) * | 2019-03-05 | 2021-12-03 | 友达光电股份有限公司 | 显示装置及其制造方法 |
Also Published As
Publication number | Publication date |
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US7101729B2 (en) | 2006-09-05 |
CN100339939C (zh) | 2007-09-26 |
KR20030085471A (ko) | 2003-11-05 |
KR100515774B1 (ko) | 2005-09-23 |
TWI239078B (en) | 2005-09-01 |
JP4329368B2 (ja) | 2009-09-09 |
US20040080032A1 (en) | 2004-04-29 |
JP2004006724A (ja) | 2004-01-08 |
TW200403817A (en) | 2004-03-01 |
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