CN1434521A - Method for making white colore LED - Google Patents

Method for making white colore LED Download PDF

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Publication number
CN1434521A
CN1434521A CN02102076A CN02102076A CN1434521A CN 1434521 A CN1434521 A CN 1434521A CN 02102076 A CN02102076 A CN 02102076A CN 02102076 A CN02102076 A CN 02102076A CN 1434521 A CN1434521 A CN 1434521A
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CN
China
Prior art keywords
white light
blue
purple
green
red
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN02102076A
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Chinese (zh)
Other versions
CN1266776C (en
Inventor
陈兴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
QUANXING DEVELOPMENT SCIENCE AND TECHNOLOGY Co Ltd
Original Assignee
QUANXING DEVELOPMENT SCIENCE AND TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by QUANXING DEVELOPMENT SCIENCE AND TECHNOLOGY Co Ltd filed Critical QUANXING DEVELOPMENT SCIENCE AND TECHNOLOGY Co Ltd
Priority to CNB021020760A priority Critical patent/CN1266776C/en
Priority to JP2003005579A priority patent/JP2003224306A/en
Priority to DE10301169A priority patent/DE10301169A1/en
Priority to KR1020030003705A priority patent/KR100702297B1/en
Publication of CN1434521A publication Critical patent/CN1434521A/en
Application granted granted Critical
Publication of CN1266776C publication Critical patent/CN1266776C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

A white light LED is composed of a packaged, vitalight LED crystal grains and phosphor powder mixed by red, blue and green colors. The process method is to use the vitalight generated from the vitalight LED crystal grains to excite phosephor powder layer on its surface to generate red, blue and green three wave lengths mixed white light, the optimum option of high brightness generated by the presert single white light LED.

Description

The manufacture method of white light-emitting diode
Technical field
The present invention relates to a kind of manufacturing method for LED, relate in particular to a kind of manufacture method of white light-emitting diode.
Background technology
At present the manufacture method of single white light LEDs has two kinds, and one for adding the yellow phosphor powder mode of YAG with blue light crystal grain, and the main producer is a Japanese Ri Ya chemical company, and its Taiwan patent announcement number is 383, No. 508.
Another kind of is to add red, blue, green three primary colors phosphor powder mode with ultraviolet light crystal grain to make the generation white light be created the Taiwan patent announcement the 385th, No. 063 by the inventor.
More than first kind of mode add yellow phosphor powder with blue dies; its maximum shortcoming is that the white light wavelength that is sent has only two wavelength; have only blue light and gold-tinted; therefore the white light that comes out of made is only applicable to indication and uses in this way; still difficulty reaches real standard illuminants purposes or LCD colored backlight source usefulness; another shortcoming be since yellow phosphor powder precisely quantitatively control be difficult for, and the time regular meeting cause photochromic inclined to one side indigo plant or yellow partially phenomenon.
The second way produces the three-wavelength white light with ultraviolet excitation three primary colors phosphor powder, should optimal mode, but with regard to real face, still there are not high efficiency, the appearance of high-power ultraviolet leds crystal grain at present, with present ultraviolet leds with regard to regard to Japanese Ri Ya chemical company, it produces wavelength 371nm power and also has only about 2-3mw, Japan Toyota Synesis Company produces wavelength 380nm power also to be had only about 2-3mw, and its reason that is difficult to make high power ultraviolet leds crystal grain is the influence that is subjected to material behavior and processing procedure.
Another shortcoming is not for still there being at present the encapsulation transparent resin of ultraviolet light, and most of organic resin all can absorb ultraviolet light, and causes resin to be subjected to UV-irradiation to produce degradation phenomena, will influence life-span and the quality of LED.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of white light-emitting diode (LED), the purple light that utilizes purple LED crystal grain to produce excites at its surperficial fluorescent bisque, and produces red, blue, green three-wavelength mixed white light,
For achieving the above object, the manufacture method of a kind of white light emitting diode provided by the invention, by base plate for packaging or support, purple-light LED (LED) crystal grain and one has red, blue, the phosphor powder that green three primary colors are mixed is formed, purple LED crystal grain is fixed on base plate for packaging or the support, and connection electrode also will have red, blue, the phosphor powder that green three primary colors are mixed, directly or indirectly be coated on the purple LED grain surface to apply or to put the glue mode, the purple light that utilizes purple LED crystal grain to produce, excite at its surperficial fluorescent bisque, make generation red, blue, the white light that green three-wavelength mixes.
Wherein the purple light scope that produced of purple LED crystal grain is wavelength 390nm-410nm.
Wherein base plate for packaging can be printed circuit board (PCB) (PCB) or ceramic substrate or silicon substrate or metal substrate.
The phosphor powder that wherein has red, blue, green three mixture of colours, wherein:
Red fluorescent powder is Y 2O 2S: Eu, Gd
The green fluorescent powder is ZnS: Cu, Al or Ca 2MgSi 2O 7: Cl
The blue-fluorescence powder is BaMgAl 10O 17: Eu
Or (Sr, Ca, BaMg) 10(PO 4) 6Cl 2: the Eu description of drawings
Exemplify embodiment below and accompanying drawings is as follows:
Fig. 1 is the structure chart of the support method for packing of conventional white light LED.
Fig. 2 is the support manufacturing method structure chart of white light LEDs of the present invention.
Fig. 3 is another structure chart of support manufacturing method of white light LEDs of the present invention.
Fig. 4 is the die casting manufacture method structure chart of white light LEDs of the present invention.
Fig. 5 is the spectrogram of white light LEDs of the present invention.
Embodiment
See also shown in Figure 2, at first with redness, blueness, green three primary colors phosphor powder 2, enable to mix with purple light excited generation white light as mixing preparation with proper proportion, wherein white light is again because of the customer demand difference has the variation of requirement colour temperature from 3000-8000K, can also allocate the ratio of red, blue, green three primary colors phosphor powder 2 and reaches.
With purple LED crystal grain 1, be fixedly arranged on package support 3 or the base plate for packaging 9, and connect LED crystal grain 1 and stent electrode 5 (or base electrode 10) and package support 3 (or encapsulation base 9) respectively with lead 4, and the three primary colors phosphor powder 2 direct or indirect (shown in Fig. 3,4) that mixes is coated on purple LED crystal grain 1 surface, utilize the purple light excited of purple LED crystal grain 1 generation at its surperficial three primary colors phosphor powder 2, make to produce the white light that red, blue, green three ripples mix, shown in Fig. 5 spectrogram.
The three primary colors phosphor powder 2 red Y that adopt of the present invention 2O 2S: Eu, Gd; The green fluorescent powder is ZnS: Cu, Al or Ca 2MgSi 2O 7: Cl; The blue-fluorescence powder is BaMgAl 10O 17: Eu or (Sr, Ca, BaMg) 10(PO 4) 6Cl 2: Eu.
Other available phosphor powders are still arranged except above-mentioned phosphor powder, but do not represent the present invention only to limit the use of above-mentioned phosphor powder, also comprised the phosphor powder material that other can be excited by violet wavelength (390-410nm) scope.
The research of past phosphor powder is all based on 254nm or 365nm exciting light, rare my research produces white light with purple light excited source, because of high power purple LED crystal grain 1 for just being developed in this year, excite phosphor powder to produce white light with high power purple LED crystal grain 1, still at first create the method for proposition for the present invention, though it may not be following main stream approach, single selection that white light LEDs produces high brightness three-wavelength the best at present.

Claims (4)

1, a kind of manufacture method of white light emitting diode, by base plate for packaging or support, purple-light LED (LED) crystal grain and one has the phosphor powder of red, blue, green three primary colors mixing and forms, purple LED crystal grain is fixed on base plate for packaging or the support, and connection electrode also will have the phosphor powder that red, blue, green three primary colors are mixed, directly or indirectly be coated on the purple LED grain surface to apply or to put the glue mode, the purple light that utilizes purple LED crystal grain to produce, excite at its surperficial fluorescent bisque, make to produce the white light that red, blue, green three-wavelength mixes.
2, the manufacture method of white light emitting diode as claimed in claim 1 is characterized in that, wherein the purple light scope that produced of purple LED crystal grain is wavelength 390nm-410nm.
3, the manufacture method of white light emitting diode as claimed in claim 1 is characterized in that, wherein base plate for packaging can be printed circuit board (PCB) (PCB) or ceramic substrate or silicon substrate or metal substrate.
4, the manufacture method of white light emitting diode as claimed in claim 1 is characterized in that, wherein has the phosphor powder of red, blue, green three mixture of colours, wherein:
Red fluorescent powder is Y 2O 2S: Eu, Gd
The green fluorescent powder is ZnS: Cu, Al or Ca 2MgSi 2O 7: Cl
The blue-fluorescence powder is BaMgAl 10O 17: Eu
Or (Sr, Ca, BaMg) 10(PO 4) 6Cl 2: Eu
CNB021020760A 2002-01-21 2002-01-21 Method for making white colore LED Expired - Fee Related CN1266776C (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CNB021020760A CN1266776C (en) 2002-01-21 2002-01-21 Method for making white colore LED
JP2003005579A JP2003224306A (en) 2002-01-21 2003-01-14 Manufacturing method for white light emitting diode
DE10301169A DE10301169A1 (en) 2002-01-21 2003-01-15 Production of LEDs emitting white light comprises mounting a UV light LED chip on an electrode, and directly or indirectly applying RGB-mixed phosphor powder on the surface of the chip
KR1020030003705A KR100702297B1 (en) 2002-01-21 2003-01-20 Method for manufacturing a white led

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB021020760A CN1266776C (en) 2002-01-21 2002-01-21 Method for making white colore LED

Publications (2)

Publication Number Publication Date
CN1434521A true CN1434521A (en) 2003-08-06
CN1266776C CN1266776C (en) 2006-07-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021020760A Expired - Fee Related CN1266776C (en) 2002-01-21 2002-01-21 Method for making white colore LED

Country Status (4)

Country Link
JP (1) JP2003224306A (en)
KR (1) KR100702297B1 (en)
CN (1) CN1266776C (en)
DE (1) DE10301169A1 (en)

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WO2006108339A1 (en) * 2005-04-15 2006-10-19 Nanjing Handson Co., Ltd Led white light source based on metal wiring board
CN1333472C (en) * 2005-04-04 2007-08-22 江苏奥雷光电有限公司 Large power luminous diode fluorescent powder curing technology
CN100341163C (en) * 2004-03-29 2007-10-03 宏齐科技股份有限公司 Weight-light ligh-emitting diode unit
CN100426541C (en) * 2005-09-06 2008-10-15 亿镫光电科技股份有限公司 Light-emitting device generating visible light
CN100433389C (en) * 2004-05-13 2008-11-12 首尔半导体株式会社 Light emitting device including RGB light emitting diodes and phosphor
CN100438026C (en) * 2005-09-16 2008-11-26 鸿富锦精密工业（深圳）有限公司 White light light-emitting diode and producing method thereof
US7554129B2 (en) 2004-06-10 2009-06-30 Seoul Semiconductor Co., Ltd. Light emitting device
CN1981388B (en) * 2004-05-06 2010-09-15 首尔半导体株式会社 Light emitting device
CN1854863B (en) * 2005-04-27 2010-09-29 三星电机株式会社 Backlight unit for LCD using LED
CN101179102B (en) * 2006-11-10 2010-12-01 深圳市光伏能源科技有限公司 LED lamp and producing process
US8070983B2 (en) 2004-06-10 2011-12-06 Seoul Semiconductor Co., Ltd. Luminescent material
US8134165B2 (en) 2007-08-28 2012-03-13 Seoul Semiconductor Co., Ltd. Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
US8137589B2 (en) 2007-08-22 2012-03-20 Seoul Semiconductor Co., Ltd. Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
US8148897B2 (en) 2005-04-27 2012-04-03 Samsung Electro-Mechanics Co., Ltd. Backlight unit for LCD using LED
US8188492B2 (en) 2006-08-29 2012-05-29 Seoul Semiconductor Co., Ltd. Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light
US8273266B2 (en) 2005-11-11 2012-09-25 Seoul Semiconductor Co., Ltd. Copper-alkaline-earth-silicate mixed crystal phosphors
US8308980B2 (en) 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
US8535564B2 (en) 2009-06-24 2013-09-17 Seoul Semiconductor, Co., Ltd. Light emitting device employing luminescent substances with oxyorthosilicate luminophores
US8703014B2 (en) 2009-06-24 2014-04-22 Seoul Semiconductor Co., Ltd. Luminescent substances having Eu2+-doped silicate luminophores
US8847254B2 (en) 2005-12-15 2014-09-30 Seoul Semiconductor Co., Ltd. Light emitting device
US9312246B2 (en) 2006-03-31 2016-04-12 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
CN107384383A (en) * 2017-08-18 2017-11-24 苏州轻光材料科技有限公司 A kind of compound fluorescent material of UV excited white lights LED
CN107801399A (en) * 2015-06-24 2018-03-13 西博勒Ip I 私人有限公司 Phosphor ceramic

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CN100383988C (en) * 2003-08-20 2008-04-23 刘行仁 White light LED and light converting luminophore
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KR20170017315A (en) 2015-08-06 2017-02-15 정수동 LED light source for implementing a high S/P ratio
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CN100341163C (en) * 2004-03-29 2007-10-03 宏齐科技股份有限公司 Weight-light ligh-emitting diode unit
CN1981388B (en) * 2004-05-06 2010-09-15 首尔半导体株式会社 Light emitting device
US8071988B2 (en) 2004-05-06 2011-12-06 Seoul Semiconductor Co., Ltd. White light emitting device comprising a plurality of light emitting diodes with different peak emission wavelengths and a wavelength converter
US9209162B2 (en) 2004-05-13 2015-12-08 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
CN100433389C (en) * 2004-05-13 2008-11-12 首尔半导体株式会社 Light emitting device including RGB light emitting diodes and phosphor
US11605762B2 (en) 2004-05-13 2023-03-14 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US10916684B2 (en) 2004-05-13 2021-02-09 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US10672956B2 (en) 2004-05-13 2020-06-02 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US10186642B2 (en) 2004-05-13 2019-01-22 Seoul Semiconductor Co., Ltd. Light emitting device including RGB light emitting diodes and phosphor
US8066909B2 (en) 2004-06-10 2011-11-29 Seoul Semiconductor Co., Ltd. Light emitting device
US8883040B2 (en) 2004-06-10 2014-11-11 Seoul Semiconductor Co., Ltd. Luminescent material
US8318044B2 (en) 2004-06-10 2012-11-27 Seoul Semiconductor Co., Ltd. Light emitting device
US8070983B2 (en) 2004-06-10 2011-12-06 Seoul Semiconductor Co., Ltd. Luminescent material
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WO2006108339A1 (en) * 2005-04-15 2006-10-19 Nanjing Handson Co., Ltd Led white light source based on metal wiring board
US8148897B2 (en) 2005-04-27 2012-04-03 Samsung Electro-Mechanics Co., Ltd. Backlight unit for LCD using LED
CN1854863B (en) * 2005-04-27 2010-09-29 三星电机株式会社 Backlight unit for LCD using LED
CN100426541C (en) * 2005-09-06 2008-10-15 亿镫光电科技股份有限公司 Light-emitting device generating visible light
CN100438026C (en) * 2005-09-16 2008-11-26 鸿富锦精密工业（深圳）有限公司 White light light-emitting diode and producing method thereof
US8273266B2 (en) 2005-11-11 2012-09-25 Seoul Semiconductor Co., Ltd. Copper-alkaline-earth-silicate mixed crystal phosphors
US8847254B2 (en) 2005-12-15 2014-09-30 Seoul Semiconductor Co., Ltd. Light emitting device
US9312246B2 (en) 2006-03-31 2016-04-12 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US9576939B2 (en) 2006-03-31 2017-02-21 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US11322484B2 (en) 2006-03-31 2022-05-03 Seoul Semiconductor Co., Ltd. Light emitting device and lighting system having the same
US8674380B2 (en) 2006-08-29 2014-03-18 Seoul Semiconductor Co., Ltd. Light emitting device having plural light emitting diodes and plural phosphors for emitting different wavelengths of light
US8188492B2 (en) 2006-08-29 2012-05-29 Seoul Semiconductor Co., Ltd. Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light
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US8501040B2 (en) 2007-08-22 2013-08-06 Seoul Semiconductor Co., Ltd. Non-stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
US8137589B2 (en) 2007-08-22 2012-03-20 Seoul Semiconductor Co., Ltd. Non stoichiometric tetragonal copper alkaline earth silicate phosphors and method of preparing the same
US8431954B2 (en) 2007-08-28 2013-04-30 Seoul Semiconductor Co., Ltd. Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
US8134165B2 (en) 2007-08-28 2012-03-13 Seoul Semiconductor Co., Ltd. Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
US8703014B2 (en) 2009-06-24 2014-04-22 Seoul Semiconductor Co., Ltd. Luminescent substances having Eu2+-doped silicate luminophores
US8535564B2 (en) 2009-06-24 2013-09-17 Seoul Semiconductor, Co., Ltd. Light emitting device employing luminescent substances with oxyorthosilicate luminophores
CN107801399A (en) * 2015-06-24 2018-03-13 西博勒Ip I 私人有限公司 Phosphor ceramic
CN107801399B (en) * 2015-06-24 2021-08-10 西博勒Ip I 私人有限公司 Phosphor ceramic
CN107384383A (en) * 2017-08-18 2017-11-24 苏州轻光材料科技有限公司 A kind of compound fluorescent material of UV excited white lights LED

Also Published As

Publication number Publication date
DE10301169A1 (en) 2003-07-31
JP2003224306A (en) 2003-08-08
CN1266776C (en) 2006-07-26
KR20030063211A (en) 2003-07-28
KR100702297B1 (en) 2007-03-30

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