CN1384860A - 含有机添加剂的钽障壁浆液 - Google Patents
含有机添加剂的钽障壁浆液 Download PDFInfo
- Publication number
- CN1384860A CN1384860A CN00815126A CN00815126A CN1384860A CN 1384860 A CN1384860 A CN 1384860A CN 00815126 A CN00815126 A CN 00815126A CN 00815126 A CN00815126 A CN 00815126A CN 1384860 A CN1384860 A CN 1384860A
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- Prior art keywords
- slurries
- copper
- dioxide
- silicon
- cmp
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- 239000002002 slurry Substances 0.000 title claims abstract description 174
- 230000004888 barrier function Effects 0.000 title claims abstract description 28
- 239000006259 organic additive Substances 0.000 title claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 250
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 122
- 239000010949 copper Substances 0.000 claims abstract description 121
- 229910052802 copper Inorganic materials 0.000 claims abstract description 86
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 79
- 150000001875 compounds Chemical class 0.000 claims abstract description 31
- 238000005498 polishing Methods 0.000 claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 229960001866 silicon dioxide Drugs 0.000 claims description 52
- 235000012239 silicon dioxide Nutrition 0.000 claims description 52
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 26
- 239000000126 substance Substances 0.000 claims description 26
- 239000000654 additive Substances 0.000 claims description 25
- 239000001257 hydrogen Substances 0.000 claims description 25
- 229910052739 hydrogen Inorganic materials 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 230000000996 additive effect Effects 0.000 claims description 22
- -1 polyethylene Polymers 0.000 claims description 17
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 16
- 229920001223 polyethylene glycol Polymers 0.000 claims description 15
- 235000011187 glycerol Nutrition 0.000 claims description 12
- 239000000725 suspension Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 11
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 10
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- 239000000600 sorbitol Substances 0.000 claims description 8
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 7
- 150000001412 amines Chemical class 0.000 claims description 7
- 150000003852 triazoles Chemical class 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 229920002401 polyacrylamide Polymers 0.000 claims description 6
- 239000002594 sorbent Substances 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 239000013543 active substance Substances 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 claims description 2
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 claims description 2
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 claims description 2
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 2
- 239000011118 polyvinyl acetate Substances 0.000 claims description 2
- 150000001879 copper Chemical class 0.000 claims 4
- 239000005751 Copper oxide Substances 0.000 claims 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims 2
- 229910000431 copper oxide Inorganic materials 0.000 claims 2
- 229960004643 cupric oxide Drugs 0.000 claims 2
- 229920001038 ethylene copolymer Polymers 0.000 claims 1
- 150000002314 glycerols Chemical class 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 238000010186 staining Methods 0.000 abstract description 5
- 239000000376 reactant Substances 0.000 abstract description 4
- 238000006664 bond formation reaction Methods 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 239000002244 precipitate Substances 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 description 35
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 29
- 238000012360 testing method Methods 0.000 description 24
- 229910052715 tantalum Inorganic materials 0.000 description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
- 241000894007 species Species 0.000 description 10
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000013626 chemical specie Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 229920002523 polyethylene Glycol 1000 Polymers 0.000 description 7
- 229920000604 Polyethylene Glycol 200 Polymers 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 230000005764 inhibitory process Effects 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- 125000005372 silanol group Chemical group 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 3
- 239000005750 Copper hydroxide Substances 0.000 description 3
- 229910008051 Si-OH Inorganic materials 0.000 description 3
- 229910006358 Si—OH Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910001956 copper hydroxide Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 241000628997 Flos Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- KSJPSPOHTOCVHV-UHFFFAOYSA-N copper dioxosilane 2H-triazole Chemical compound [Cu].N1N=NC=C1.[Si](=O)=O KSJPSPOHTOCVHV-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000001617 migratory effect Effects 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
浆液码号 | 添加剂 | 沉淀物? | 视觉(显微镜)检查总结 |
对照 | 无 | Y | 遍及晶片的严重二氧化硅沉淀物及污物残留物 |
D | 0.1%PAA-1500 | Y | 中度ppt/污物,比对照浆液少 |
E | 1.0%PAA-1500 | Y | 中度ppt/污物,比对照浆液少 |
F | 0.11%PVA-18000 | N | 无二氧化硅沉淀物或铜污物残留物 |
G | 0.55%PVA-18000 | N | 无二氧化硅沉淀物或铜污物残留物 |
1a | 0.22%PVA-180000.05%NaDBS | N | 无二氧化硅沉淀物或铜污物残留物 |
1b | 0.55%PVA-180000.13%NaDBS | N | 无二氧化硅沉淀物或铜污物残留物 |
2a | 0.1%PEG-200 | Y | 微量ppt/污物,比对照浆液少很多 |
2b | 0.1%PEG-1000 | Y | 微量ppt/污物,比对照浆液少很多 |
2c | 1.0%PEG-200 | Y | 中度ppt/污物,比对照浆液少 |
2d | 1.0%PEG-1000 | Y | 微量ppt/污物,比对照浆液少很多 |
3a | 0.01%DMSiO-EO | Y | 非常微量ppt,比对照浆液少很多 |
3b | 0.10%DMSiO-EO | N | 无二氧化硅沉淀物或铜污物残留物 |
4b | 1.0%山梨糖醇 | Y | 中度ppt/污物,比对照浆液少 |
5a | 0.1%DCA | Y | 中度ppt/污物,比对照浆液少 |
5b | 1.0%DCA | Y | 无ppt/污物,超过对照浆液的改良 |
5c | 0.013%PEI | Y | 中度ppt/污物,比对照浆液少 |
6a | 0.1%DEG | Y | 中度ppt/污物,比对照浆液少 |
6b | 1.0%DEG | Y | 中度ppt/污物,比对照浆液少 |
6c | 0.1%GEO-1000 | Y | 极少ppt/污物,超过对照浆液的改良 |
6d | 1.0%GEO-1000 | Y | 中度ppt/污物,比对照浆液少 |
7a | 0.1%GPO-260 | Y | 微量ppt/污物,比对照浆液少很多 |
7b | 0.1%GPO-1500 | Y | 微量ppt/污物,比对照浆液少很多 |
7c | 1.0%GPO-260 | Y | 微量ppt/污物,比对照浆液少很多 |
7d | 1.0%GPO-1500 | N | 无二氧化硅沉淀物或铜污物残留物 |
11a | 0.1%PEG-10000 | (N) | 无ppt/污物,除了一晶片上的一位置外 |
11b | 1.0%PEG-10000 | N | 无二氧化硅沉淀物或铜污物残留物 |
12a | 0.1%PAA-10000 | Y | 中度ppt/污物,比对照浆液少 |
12b | 1.0%PAA-10000 | (N) | 无二氧化硅沉淀物或铜污物残留物,除了一位置具有非常极微的ppt/污物外 |
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/434,146 | 1999-11-04 | ||
US09/434,146 US6503418B2 (en) | 1999-11-04 | 1999-11-04 | Ta barrier slurry containing an organic additive |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1384860A true CN1384860A (zh) | 2002-12-11 |
CN1170903C CN1170903C (zh) | 2004-10-13 |
Family
ID=23723002
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008151261A Expired - Fee Related CN1170903C (zh) | 1999-11-04 | 2000-11-03 | 含有机添加剂的钽障壁浆液 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6503418B2 (zh) |
EP (1) | EP1246879A1 (zh) |
JP (1) | JP2003514374A (zh) |
KR (1) | KR100807343B1 (zh) |
CN (1) | CN1170903C (zh) |
TW (1) | TWI270568B (zh) |
WO (1) | WO2001032794A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008040182A1 (fr) * | 2006-09-29 | 2008-04-10 | Anji Microelectronics (Shanghai) Co., Ltd. | Liquide de polissage chimico-mécanique pour le polissage de polysilicium |
CN104745085A (zh) * | 2013-12-25 | 2015-07-01 | 安集微电子(上海)有限公司 | 一种用于钴阻挡层抛光的化学机械抛光液 |
CN107075309A (zh) * | 2014-09-05 | 2017-08-18 | 日本嘉柏微电子株式会社 | 浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法 |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6855266B1 (en) * | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
KR100378180B1 (ko) * | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
US6508953B1 (en) * | 2000-10-19 | 2003-01-21 | Ferro Corporation | Slurry for chemical-mechanical polishing copper damascene structures |
US6676718B2 (en) * | 2001-01-12 | 2004-01-13 | Rodel Holdings, Inc. | Polishing of semiconductor substrates |
US6656241B1 (en) * | 2001-06-14 | 2003-12-02 | Ppg Industries Ohio, Inc. | Silica-based slurry |
US7077880B2 (en) | 2004-01-16 | 2006-07-18 | Dupont Air Products Nanomaterials Llc | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization |
US7513920B2 (en) | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
US20030162398A1 (en) | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
US20030168627A1 (en) * | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
CN100336179C (zh) * | 2002-04-30 | 2007-09-05 | 日立化成工业株式会社 | 研磨液及研磨方法 |
US6616514B1 (en) | 2002-06-03 | 2003-09-09 | Ferro Corporation | High selectivity CMP slurry |
US6974777B2 (en) | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
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2000
- 2000-11-03 JP JP2001535479A patent/JP2003514374A/ja active Pending
- 2000-11-03 KR KR1020027005777A patent/KR100807343B1/ko not_active IP Right Cessation
- 2000-11-03 EP EP00976902A patent/EP1246879A1/en not_active Withdrawn
- 2000-11-03 CN CNB008151261A patent/CN1170903C/zh not_active Expired - Fee Related
- 2000-11-03 WO PCT/US2000/030354 patent/WO2001032794A1/en not_active Application Discontinuation
- 2000-11-04 TW TW089123269A patent/TWI270568B/zh not_active IP Right Cessation
Cited By (5)
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WO2008040182A1 (fr) * | 2006-09-29 | 2008-04-10 | Anji Microelectronics (Shanghai) Co., Ltd. | Liquide de polissage chimico-mécanique pour le polissage de polysilicium |
CN104745085A (zh) * | 2013-12-25 | 2015-07-01 | 安集微电子(上海)有限公司 | 一种用于钴阻挡层抛光的化学机械抛光液 |
CN104745085B (zh) * | 2013-12-25 | 2018-08-21 | 安集微电子(上海)有限公司 | 一种用于钴阻挡层抛光的化学机械抛光液 |
CN107075309A (zh) * | 2014-09-05 | 2017-08-18 | 日本嘉柏微电子株式会社 | 浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法 |
CN107075309B (zh) * | 2014-09-05 | 2020-09-01 | 日本嘉柏微电子株式会社 | 浆料组合物、漂洗组合物、基板抛光方法以及漂洗方法 |
Also Published As
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WO2001032794A1 (en) | 2001-05-10 |
US20020005504A1 (en) | 2002-01-17 |
US6503418B2 (en) | 2003-01-07 |
EP1246879A1 (en) | 2002-10-09 |
KR20020062936A (ko) | 2002-07-31 |
TWI270568B (en) | 2007-01-11 |
JP2003514374A (ja) | 2003-04-15 |
CN1170903C (zh) | 2004-10-13 |
KR100807343B1 (ko) | 2008-02-28 |
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