CN1373523A - High-brightness nitride LED generating white light and its preparing process - Google Patents
High-brightness nitride LED generating white light and its preparing process Download PDFInfo
- Publication number
- CN1373523A CN1373523A CN02100345A CN02100345A CN1373523A CN 1373523 A CN1373523 A CN 1373523A CN 02100345 A CN02100345 A CN 02100345A CN 02100345 A CN02100345 A CN 02100345A CN 1373523 A CN1373523 A CN 1373523A
- Authority
- CN
- China
- Prior art keywords
- transparent resin
- light
- chip
- white light
- nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 8
- 229920005989 resin Polymers 0.000 claims abstract description 32
- 239000011347 resin Substances 0.000 claims abstract description 32
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052737 gold Inorganic materials 0.000 claims abstract description 15
- 239000010931 gold Substances 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 3
- 230000005284 excitation Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 6
- 238000009826 distribution Methods 0.000 abstract description 2
- 239000002223 garnet Substances 0.000 abstract 1
- 238000012856 packing Methods 0.000 abstract 1
- 230000002633 protecting effect Effects 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000007850 degeneration Effects 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- BWNIQQKPTNHINK-UHFFFAOYSA-N [Ag+].[S-2].[Cd+2].[Zn+2] Chemical compound [Ag+].[S-2].[Cd+2].[Zn+2] BWNIQQKPTNHINK-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Led Device Packages (AREA)
Abstract
A high-brightness white-light nitride LED is prepared through applying transparent resin on nitride LED chip and gold wires to form ball, applying the mixture of transparent resin and Ce-Y-Al doped garnet fluorescence powder and packing with transparent resin. Its advantages are high protecting effect on chip and gold wires, intersified brightness, and adjustable light intensity distribution in space, chromatic coordinate and color temp.
Description
Technical field: the present invention relates to a kind of high-brightness nitride LED generating white light and preparation method thereof.
Background technology: at present, the research and development of various light sources all develop to the energy-saving and environmental protection direction, though the electricity-saving lamp comparison energy savings of some fluorescence classes, useful life is shorter, and are making and contaminated environment when discarded.Generally the light-emitting diode of Shi Yonging has power saving, environmental protection, long service life, reliability advantages of higher, but generally can only send brightness lower red, yellow, blue light, is not suitable as light source and uses.White light-emitting diode is rarely found, and main cause is owing to its manufacturing process complexity, and the photochromic very difficult control of white light.The manufacture method of white light-emitting diode mainly contains:
One, utilize the chip of luminescent tube of multiple color to be combined into the white-light emitting pipe.
The luminescence chip of three kinds of colors of red, green, blue (or yellow, blue two kinds of colors) is contained in the light-emitting diode simultaneously, and the electric current of controlling respectively by each luminescence chip can produce white light.But voltage that the luminescence chip of different colours is required and the electric current that passes through are had nothing in common with each other, and control is difficulty comparatively, and white light colourity is also inhomogeneous; And, then can't obtain white light if one of them breaks down; In addition, use a plurality of chips simultaneously, cost also can increase, and is very unfavorable to practical application,
Two, the blue-light excited fluorescent material that can send sodium yellow that utilizes the nitride light-emitting chip to produce, the two can obtain white light after mixing.As:
1, the white light-emitting diodes (Japanese patent application publication No.: special flat 7--99345), mainly be to be filled in after fluorescent material and the mixed with resin in the V-type groove of the electrode suppor that is placed with luminescence chip of Ri Ya chemical company release.If luminescence chip is yellow for emission blue light, the fluorescent material of fluorescence resin, but then blue and yellow synthesize white light.
2, (Chinese patent application number: 97227697.1) be attached on the luminescence chip by proper proportion mixing preparation and drop with fluorescent material and liquid (as alcohol or water and a small amount of adhering liquid) on the blue led chips, luminescent powder can even mixed flow and be attached to luminescence chip the surface and around, treat after the solution evaporation, can form a phosphor laminate thin film that is coated on luminescence chip.
3, (Chinese patent application number: 00237186.3), be that coating one deck wavelength is the gold-tinted fluorescence coating (being mixed by epoxy resin and yttrium aluminate cerium or zinc-cadmium sulfide silver) of 530 nanometers on the gallium nitride blue chip of 430-470 nanometer at wavelength, the two forms white light.
The advantage of said method (1,2,3) is: manufacture craft and design of drive circuit are simple, power consumption is low, and production cost is lower, so adopt this legal system to make the white-light emitting pipe at present mostly;
Shortcoming is: 1, the fluorescent material coating is insecure also inhomogeneous, and fluorescent material distributes more around the luminescence chip, when the white light that causes this product to send is projeced on the white paper, can see that the yellow ring of light that has of the white point of throwing produces all around, illustrate that the purity of white light is not enough; 2, compare with the white-light emitting pipe that multi-color LED is combined into, brightness reduces.3, fluorescent material is owing to directly contact with tube core, and tube core when luminous temperature higher, can make the fluorescent material degeneration, generation optical maser wavelength moves, finally efficient, the color of white light-emitting diodes can change.
Summary of the invention:
The object of the present invention is to provide a kind of high-brightness nitride LED generating white light and preparation method thereof, improve luminous uniformity and stability; Strengthen the luminous intensity of white light-emitting diodes.
High-brightness nitride LED generating white light of the present invention comprises chip, spun gold, and transparent resin, chip are the iii-nitride light emitting devices chip; Transparent resin applies and is solidificated on iii-nitride light emitting devices chip and the spun gold, is the spherical crown shape; The mixture of fluorescent material and transparent resin is coated on the spherical crown shape transparent resin as fluorescence coating; Chip emission light is white light after passing fluorescence coating; Outer with the conventional encapsulation of transparent resin.
Described iii-nitride light emitting devices chip is selected from blue light, purple light or ultraviolet light chip.Fluorescent material is yellow fluorescent powder, is selected from cerium-doped yttrium aluminum garnet fluorescent powder or other yellow fluorescent powders or combination.
Thickness 0.02～the 0.8mm of fluorescence coating, the height 0.01～2mm of spherical crown, fluorescent material weight accounts for 45%-55% in the mixture of fluorescent material and transparent resin.
The method of the above-mentioned high-brightness nitride LED generating white light of preparation of the present invention, its step comprises
1, adopts the iii-nitride light emitting devices chip as transmitting illuminant, it is shelved, the welding spun gold;
2, transparent resin is applied and is solidificated on iii-nitride light emitting devices chip and the spun gold, form the spherical crown shape;
3, the mixture with transparent resin and fluorescent material is coated on the spherical crown shape transparent resin;
4, carry out the routine encapsulation with transparent resin.
Described iii-nitride light emitting devices chip is selected from blue light, purple light or ultraviolet light chip.Fluorescent material is yellow fluorescent powder, is selected from cerium-doped yttrium aluminum garnet fluorescent powder or other yellow fluorescent powders or combination.
Thickness 0.02～the 0.8mm of fluorescence coating, the height 0.01～2mm of spherical crown, fluorescent material weight accounts for 45%-55% in the mixture of fluorescent material and transparent resin.
The present invention utilizes the surface tension of liquid, makes the transparent resin that is coated on nitride diode chip and the spun gold be spherical, and following advantage is arranged
1, can improve coating uniformity of phosphor powder;
2, can effectively protect luminescence chip and spun gold, thereby strengthen the luminous intensity of white light-emitting diodes;
3, fluorescent material does not contact with tube core, and the luminous efficiency of having avoided the fluorescent material degeneration to cause reduces and glow color changes;
4, change the height of spherical crown, the spatial distribution of scalable luminous intensity;
5, regulate fluorescent material thickness, can change parameters such as chromaticity coordinates, colour temperature.
High-brightness nitride LED generating white light luminosity of the present invention is tall and big in 1 candela (1cd), its life-span can reach 100,000 hours, and its operating voltage is 3.5 volts a direct current, power consumption only be identical luminosity light source 1/10th, energy-saving effect is very remarkable, and the caloric value in the use is low, does not contain there are the pollutant that endangers in human body and environment.Can make with this white light-emitting diodes and to have total solids light source light, sturdy and durable, environmental protection, can be widely used in demonstration, family and background illumination, dynamic field such as demonstration, social benefit and economic benefit are very remarkable.
Description of drawings:
Fig. 1 high-brightness nitride LED generating white light structural representation of the present invention
The 1-chip; The 2-spun gold; The 3-transparent resin; The 4-fluorescence coating; The 5-pin; 6-spherical crown height
Embodiment:
At first the nitride blue LED chip 1 of 455-465 nanometer is shelved, welding spun gold 2 is encapsulated in chip 1 and spun gold 2 in the domed transparent resin 3, and spherical crown height 6 is 1 millimeter as shown in the figure.Selecting wavelength for use is the gold-tinted fluorescent material of 530 nanometers.Because the two forms white light blue chip and yellow fluorescence layer.Then transparent resin that mixes by specific proportions (fluorescent material 4 weight account for 45%-55%) and phosphor mixture are coated in formation fluorescence coating 4 on the chip 1, thick 0.5 millimeter intensification is solidified, and encapsulates with transparent resin at last.
At room temperature, 3.5 volts of forward voltages, forward current are 20 MAHs, and the axial luminous intensity of high-brightness nitride LED generating white light of the present invention is greater than 1cd.
Claims (8)
1. a high-brightness nitride LED generating white light comprises chip, spun gold, and transparent resin is characterized in that chip is the iii-nitride light emitting devices chip; Transparent resin applies and is solidificated on nitride blue led chips and the spun gold, becomes spherical; The mixture of fluorescent material and transparent resin applies and is solidificated on the spherical transparent resin as fluorescence coating; Chip emission light is white light after passing fluorescence coating; Outer with the conventional encapsulation of transparent resin.
2. high-brightness nitride LED generating white light as claimed in claim 1 is characterized in that described iii-nitride light emitting devices chip is selected from blue light, purple light or ultraviolet light chip.
3. high-brightness nitride LED generating white light as claimed in claim 2 is characterized in that fluorescent material is yellow fluorescent powder, is selected from cerium-doped yttrium aluminum garnet fluorescent powder or other yellow fluorescent powders or combination.
4. as claim 1 or 2 or 3 described high-brightness nitride LED generating white lights, the thickness that it is characterized in that fluorescence coating is 0.02～0.8mm, the height 0.01～2mm of spherical crown, and fluorescent material weight accounts for 45%-55% in the mixture of fluorescent material and transparent resin.
5. one kind prepares the method for high-brightness nitride LED generating white light according to claim 1, and its step comprises
1) adopts the iii-nitride light emitting devices chip as excitation source, it is shelved, the welding spun gold;
2) transparent resin is applied and is solidificated on nitride blue led chips and the spun gold, form spherical crown
Shape;
3) apply and be solidificated in ball with transparent resin with mixture that chip emission light is matched to the fluorescent material of white light
On the crown transparent resin;
4) carry out the routine encapsulation with transparent resin.
6. the method for preparing high-brightness nitride LED generating white light as claimed in claim 5 is characterized in that described iii-nitride light emitting devices chip is selected from blue light, purple light or ultraviolet light chip.
7. the method for preparing high-brightness nitride LED generating white light as claimed in claim 6 is characterized in that fluorescent material is yellow fluorescent powder, is selected from cerium-doped yttrium aluminum garnet fluorescent powder or other yellow fluorescent powders or combination.
8. as claim 5 or the 6 or 7 described methods that prepare high-brightness nitride LED generating white light, the thickness that it is characterized in that fluorescence coating is 0.02～0.8mm, height 0.01～the 2mm of spherical crown, fluorescent material weight accounts for 45%-55% in the mixture of fluorescent material and transparent resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021003459A CN1159776C (en) | 2002-01-11 | 2002-01-11 | High-brightness nitride LED generating white light and its preparing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021003459A CN1159776C (en) | 2002-01-11 | 2002-01-11 | High-brightness nitride LED generating white light and its preparing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1373523A true CN1373523A (en) | 2002-10-09 |
| CN1159776C CN1159776C (en) | 2004-07-28 |
Family
ID=4739321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021003459A Expired - Lifetime CN1159776C (en) | 2002-01-11 | 2002-01-11 | High-brightness nitride LED generating white light and its preparing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1159776C (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006108339A1 (en) * | 2005-04-15 | 2006-10-19 | Nanjing Handson Co., Ltd | Led white light source based on metal wiring board |
| CN1302053C (en) * | 2003-11-19 | 2007-02-28 | 三星电机株式会社 | Method for producing molding compound resin tablet and method for manufacturing white light emitting diode by using the production method |
| CN100345316C (en) * | 2005-04-04 | 2007-10-24 | 江苏奥雷光电有限公司 | Fluorescent powder coating process for high-power light-emitting diode |
| CN100401536C (en) * | 2004-06-18 | 2008-07-09 | 江苏稳润光电有限公司 | Method for making white-light light-emitting diode |
| CN100448004C (en) * | 2006-06-06 | 2008-12-31 | 任慰 | Day-light diode light-source and making method for fluorescent powder |
| CN100459193C (en) * | 2006-02-23 | 2009-02-04 | 亿光电子工业股份有限公司 | White light-emitting diode package structure |
| CN101378105B (en) * | 2007-08-31 | 2010-06-23 | 株式会社东芝 | Light-emitting device |
| CN1854863B (en) * | 2005-04-27 | 2010-09-29 | 三星电机株式会社 | Backlight unit for LCD using LED |
| CN101399304B (en) * | 2007-09-27 | 2010-10-27 | 海立尔股份有限公司 | Manufacturing method for LED with multi-layered optical lens and construction thereof |
| CN101562139B (en) * | 2008-04-15 | 2011-09-28 | 宏齐科技股份有限公司 | Luminescence chip encapsulating structure for avoiding reducing luminous efficiency and manufacture method thereof |
| CN102208514A (en) * | 2010-03-29 | 2011-10-05 | 海洋王照明科技股份有限公司 | Integrated illuminating part and preparation method thereof |
| CN102231418A (en) * | 2011-06-27 | 2011-11-02 | 中外合资江苏稳润光电有限公司 | Method for manufacturing white-light LED (Light Emitting Diode) with high color rendering index |
| CN102270732A (en) * | 2010-06-03 | 2011-12-07 | 展晶科技(深圳)有限公司 | Fluorescent layer structure, and forming method and light emitting diode package structure thereof |
| CN102324426A (en) * | 2011-09-30 | 2012-01-18 | 深圳市灏天光电有限公司 | Novel high-power light-emitting diode (LED) package structure |
| US8148897B2 (en) | 2005-04-27 | 2012-04-03 | Samsung Electro-Mechanics Co., Ltd. | Backlight unit for LCD using LED |
| CN102456811A (en) * | 2010-10-26 | 2012-05-16 | 福华电子股份有限公司 | Light-emitting diode packaging structure |
| CN103035818A (en) * | 2012-11-26 | 2013-04-10 | 上海威廉照明电气有限公司 | Support frame of light emitting diode (LED) with vertical structure and light emitting diode (LED) with vertical structure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101075655B (en) * | 2007-06-05 | 2010-07-07 | 诸建平 | Generator of white-light surface light source |
-
2002
- 2002-01-11 CN CNB021003459A patent/CN1159776C/en not_active Expired - Lifetime
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302053C (en) * | 2003-11-19 | 2007-02-28 | 三星电机株式会社 | Method for producing molding compound resin tablet and method for manufacturing white light emitting diode by using the production method |
| CN100401536C (en) * | 2004-06-18 | 2008-07-09 | 江苏稳润光电有限公司 | Method for making white-light light-emitting diode |
| CN100345316C (en) * | 2005-04-04 | 2007-10-24 | 江苏奥雷光电有限公司 | Fluorescent powder coating process for high-power light-emitting diode |
| WO2006108339A1 (en) * | 2005-04-15 | 2006-10-19 | Nanjing Handson Co., Ltd | Led white light source based on metal wiring board |
| US8148897B2 (en) | 2005-04-27 | 2012-04-03 | Samsung Electro-Mechanics Co., Ltd. | Backlight unit for LCD using LED |
| CN1854863B (en) * | 2005-04-27 | 2010-09-29 | 三星电机株式会社 | Backlight unit for LCD using LED |
| CN100459193C (en) * | 2006-02-23 | 2009-02-04 | 亿光电子工业股份有限公司 | White light-emitting diode package structure |
| CN100448004C (en) * | 2006-06-06 | 2008-12-31 | 任慰 | Day-light diode light-source and making method for fluorescent powder |
| CN101378105B (en) * | 2007-08-31 | 2010-06-23 | 株式会社东芝 | Light-emitting device |
| CN101399304B (en) * | 2007-09-27 | 2010-10-27 | 海立尔股份有限公司 | Manufacturing method for LED with multi-layered optical lens and construction thereof |
| CN101562139B (en) * | 2008-04-15 | 2011-09-28 | 宏齐科技股份有限公司 | Luminescence chip encapsulating structure for avoiding reducing luminous efficiency and manufacture method thereof |
| CN102208514A (en) * | 2010-03-29 | 2011-10-05 | 海洋王照明科技股份有限公司 | Integrated illuminating part and preparation method thereof |
| CN102270732A (en) * | 2010-06-03 | 2011-12-07 | 展晶科技(深圳)有限公司 | Fluorescent layer structure, and forming method and light emitting diode package structure thereof |
| CN102456811A (en) * | 2010-10-26 | 2012-05-16 | 福华电子股份有限公司 | Light-emitting diode packaging structure |
| CN102231418A (en) * | 2011-06-27 | 2011-11-02 | 中外合资江苏稳润光电有限公司 | Method for manufacturing white-light LED (Light Emitting Diode) with high color rendering index |
| CN102324426A (en) * | 2011-09-30 | 2012-01-18 | 深圳市灏天光电有限公司 | Novel high-power light-emitting diode (LED) package structure |
| CN103035818A (en) * | 2012-11-26 | 2013-04-10 | 上海威廉照明电气有限公司 | Support frame of light emitting diode (LED) with vertical structure and light emitting diode (LED) with vertical structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1159776C (en) | 2004-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1159776C (en) | High-brightness nitride LED generating white light and its preparing process | |
| CN1917240B (en) | Light-emitting semiconductor device possessing light-emitting conversion element | |
| CN1264228C (en) | Light-emitting semi-conductor component with luminescence conversion element | |
| CN101617411B (en) | Lighting device and lighting method | |
| CN1227738C (en) | Hybrid white light source comprising LED and phosphor-LED | |
| KR100666265B1 (en) | Phosphor and LED using the same | |
| CN101493216B (en) | LED light source module | |
| TW201010125A (en) | White light light-emitting diodes | |
| CN101571242A (en) | White LED light-emitting device with blue chip doped with quantum dots and YAG fluorescent powder | |
| CN1933151A (en) | White light light-emitting diode and producing method thereof | |
| CN1949507A (en) | LED device capable of regulating colour temp | |
| CN102646674A (en) | Light-emitting device of white-light LED (light-emitting diode) | |
| CN103050615A (en) | High-color-rendering white light LED (light emitting diode) device | |
| CN101030610A (en) | Large-power light-emitting diodes and its fluorescent-powder coating method | |
| US20040089864A1 (en) | Light emitting diode and method of making the same | |
| CN102779814A (en) | Light emitting element capable of giving out white light and light mixing method of light emitting element | |
| CN1719630A (en) | White light illuminating method and apparatus capable of regulating colour temp. | |
| CN1853283A (en) | White light emitting lighting system | |
| CN201916757U (en) | Light emitting diode (LED) light source | |
| CN2682276Y (en) | White light luminescent diode assembly | |
| CN102777778A (en) | Light emitting device, bulb and illuminating method | |
| CN2567782Y (en) | High-brightness white-light diode white-light source | |
| CN102569542B (en) | Packaging process for light emitting diode (LED) light source | |
| TWM430005U (en) | Long afterglow light-emitting diode package structure | |
| CN101195700B (en) | Light emitting diode frame body component and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: DONGGUAN INSTITUTE OF OPTO-ELECTRONICS PEKING UNIV Free format text: FORMER OWNER: BEIJING UNIV. Effective date: 20131119 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100871 HAIDIAN, BEIJING TO: 523808 DONGGUAN, GUANGDONG PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131119 Address after: 523808 Guangdong province Dongguan Songshan Lake high tech Industrial Development Zone Technology Park Building 4 Building 417, room 418 Patentee after: Dongguan Institute of Opto-Electronics Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |
|
| CX01 | Expiry of patent term |
Granted publication date: 20040728 |
|
| CX01 | Expiry of patent term |