CN1325921C - Anti-radiation electric field microsensor - Google Patents
Anti-radiation electric field microsensor Download PDFInfo
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- CN1325921C CN1325921C CNB2005100402848A CN200510040284A CN1325921C CN 1325921 C CN1325921 C CN 1325921C CN B2005100402848 A CNB2005100402848 A CN B2005100402848A CN 200510040284 A CN200510040284 A CN 200510040284A CN 1325921 C CN1325921 C CN 1325921C
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Abstract
The present invention discloses an anti-radiation electric field microsensor, which is used for collecting electric field signals. The anti-radiation electric field microsensor comprises a p type substrate, wherein the bottom of the p type substrate is provided with a hole; the upper surface of the p type substrate is provided with n type silicon; two heavily doped n type contact zones are poured on the n type silicon; an n type ditch is arranged between the two n type contact zones, and the two n type contact zones are connected through the n type ditch; SiO2 layers are arranged on the n type contact zones and the n type ditch; the heavily doped n type contact zones are provided with metal leading wires. The present invention has the advantages that a drifting principle of electric charges in a doped semiconductor is utilized to statically induce an electric field, which has higher reliability; because a substrate structure is drawn out, the hole on the bottom of the p type substrate is formed, and ions radiated into the structure can not reach the heavily doped n type contact zones; as a consequence, the anti-radiation of the structure is realized, etc.
Description
Technical field
The present invention relates to a kind of micro field sensor that is used to gather electric field signal, relate in particular to a kind of anti-radiation electric field microsensor.
Background technology
The principle of induction of existing electric-field microsensor mainly is the principle of dynamically responding to, and promptly uses resonance structure alternately to stop the conductor of induction field, thereby produces induction current.The major defect of the micro electric field sensor of this dynamic induction is: have relatively high expectations to processing line owing to little resonance structure (1), and the encapsulation of bascule is difficult, therefore uses its reliability of micro electric field sensor of this structure relatively poor.(2) adopt the principle of dynamic induction field to make its resolution not high (highest resolution of report is 630V/m at present).
Summary of the invention
The invention provides the high and radiation-resistant anti-radiation electric field microsensor of a kind of reliability.
The present invention adopts following technical scheme:
A kind of anti-radiation electric field microsensor that is used to gather electric field signal, comprise p type substrate, bottom at p type substrate is provided with the hole, upper surface at p type substrate is provided with n type silicon, on n type silicon, be marked with two heavily doped n type contact regions, between two n type contact regions, be provided with n type raceway groove and two n type contact regions and link to each other, on n type contact region and n type raceway groove, be provided with SiO by n type raceway groove
2Layer is provided with metal lead wire on heavily doped n type contact region.
Compared with prior art, the present invention has following advantage:
(1) the present invention utilizes the drift principle of electric charge in the doped semiconductor (positive charge moves along direction of an electric field, the contrary direction of an electric field motion of negative charge), induction field statically, when the n type raceway groove of external electric field incident electric-field microsensor, channel current can increase with the increase of incident electric field, thereby has improved reliability of the present invention.
(2) because substrat structure is emptied, formed the hole of the bottom of p type substrate 1, the ion that is radiated in the structure can't arrive heavily doped n type contact region, has therefore realized the radioresistance of structure.
Description of drawings
Fig. 1 is a front view of the present invention.
Fig. 2 is a vertical view of the present invention.
Embodiment
A kind of anti-radiation electric field microsensor that is used to gather electric field signal, comprise p type substrate 1, bottom at p type substrate 1 is provided with hole 6, upper surface at p type substrate 1 is provided with (about 0.1 μ m) n type silicon 2, on n type silicon 2, be marked with two heavily doped n type contact regions 3, being provided with n type raceway groove 7 and two n type contact regions 3 between two n type contact regions 3 links to each other by n type raceway groove 7, on n type contact region 3 and n type raceway groove 7, be provided with (about 50nm) SiO2 layer 4, on heavily doped n type contact region 3, be provided with metal lead wire 5.
After two heavily doped contact regions of n type of the present invention add voltage, when the n type raceway groove of external electrical field incident electric-field microsensor, charge carrier in the raceway groove (electronics) can increase accordingly, thereby channel current is increased, and promptly Wai Jie electric field has caused the variation of channel current.During use, utilize the standard electric field to demarcate the channel current of this electric-field microsensor earlier.When measuring electric field, then by measuring the channel current of microsensor, the contrast calibration value can obtain the intensity of incident electric field.
The present invention adopts following technology to prepare:
A: growth end oxygen on p type substrate Si forms surperficial SiO
2Layer;
B: implanted channel forms n type raceway groove;
C: ion injects the contact region, forms the contact region;
D: lithography fair lead, depositing metal and etching form metal lead wire.
E: surface structure is protected:
F: utilize stopping certainly of body silicon etching, the substrate below the raceway groove is emptied;
G: releasing structure.
Claims (1)
1, a kind of anti-radiation electric field microsensor that is used to gather electric field signal, comprise p type substrate (1), it is characterized in that being provided with hole (6) in the bottom of p type substrate (1), upper surface at p type substrate (1) is provided with n type silicon (2), on n type silicon (2), be marked with two heavily doped n type contact regions (3), between two n type contact regions (3), be provided with n type raceway groove (7) and two n type contact regions (3) and link to each other, on n type contact region (3) and n type raceway groove (7), be provided with SiO by n type raceway groove (7)
2Layer (4) is provided with metal lead wire (5) on heavily doped n type contact region (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100402848A CN1325921C (en) | 2005-05-27 | 2005-05-27 | Anti-radiation electric field microsensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100402848A CN1325921C (en) | 2005-05-27 | 2005-05-27 | Anti-radiation electric field microsensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1693911A CN1693911A (en) | 2005-11-09 |
| CN1325921C true CN1325921C (en) | 2007-07-11 |
Family
ID=35352969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100402848A Expired - Fee Related CN1325921C (en) | 2005-05-27 | 2005-05-27 | Anti-radiation electric field microsensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1325921C (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03274452A (en) * | 1990-03-26 | 1991-12-05 | Toyota Central Res & Dev Lab Inc | Field-effect transistor type oxygen sensor |
| US5140393A (en) * | 1985-10-08 | 1992-08-18 | Sharp Kabushiki Kaisha | Sensor device |
| JPH08313577A (en) * | 1995-05-23 | 1996-11-29 | Tokin Corp | Electric field sensor |
| US5627398A (en) * | 1991-03-18 | 1997-05-06 | Iskra Stevci--Industrija Merilne in Upravljalne Tehnike Kranj, D.O.O. | Hall-effect sensor incorporated in a CMOS integrated circuit |
| CN1069134C (en) * | 1996-02-02 | 2001-08-01 | 吉林大学 | Gas sensor for detecting nitrogen dioxide and its prodn technology |
-
2005
- 2005-05-27 CN CNB2005100402848A patent/CN1325921C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5140393A (en) * | 1985-10-08 | 1992-08-18 | Sharp Kabushiki Kaisha | Sensor device |
| JPH03274452A (en) * | 1990-03-26 | 1991-12-05 | Toyota Central Res & Dev Lab Inc | Field-effect transistor type oxygen sensor |
| US5627398A (en) * | 1991-03-18 | 1997-05-06 | Iskra Stevci--Industrija Merilne in Upravljalne Tehnike Kranj, D.O.O. | Hall-effect sensor incorporated in a CMOS integrated circuit |
| JPH08313577A (en) * | 1995-05-23 | 1996-11-29 | Tokin Corp | Electric field sensor |
| CN1069134C (en) * | 1996-02-02 | 2001-08-01 | 吉林大学 | Gas sensor for detecting nitrogen dioxide and its prodn technology |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1693911A (en) | 2005-11-09 |
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| PB01 | Publication | ||
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070711 Termination date: 20100527 |