CN1316571C - Chemically machinery milling technique and device - Google Patents
Chemically machinery milling technique and device Download PDFInfo
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- CN1316571C CN1316571C CNB031481116A CN03148111A CN1316571C CN 1316571 C CN1316571 C CN 1316571C CN B031481116 A CNB031481116 A CN B031481116A CN 03148111 A CN03148111 A CN 03148111A CN 1316571 C CN1316571 C CN 1316571C
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- grinding pad
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- oxide layer
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Abstract
The present invention relates to chemical-mechanical grinding technology and a device thereof. The technology is suitable for grinding an object to be ground on a base by using grinding pulp, and is characterized in that before the base is ground in a chemical-mechanical mode by using a grinding pad, pre-grinding technology is firstly implemented to the base by using a soft grinding pad so as to remove the convex part of the object to be ground. Due to soft grinding pad, the contact areas of the soft grinding pad and the convex part is increased, and grinding granules are embedded into pore spaces on the surface of the soft grinding pad so that the object to be ground can be directly ground so as to shorten technology time, reduce the consumption of the grinding granules and greatly reduce cost.
Description
Technical field
The invention relates to a kind of cmp (chemical mechanicalpolishing is called for short CMP) technology, and particularly relevant for a kind of chemical mechanical milling tech and device that can reduce process time and cost (cost).
Background technology
In semiconductor technology, along with component size continues reduction, little shadow exposure resolution ratio also increases relatively, and is accompanied by the reduction of the exposure depth of field, and is more harsh for the requirement of the height fluctuating quantity of crystal column surface.Therefore, the flatening process of wafer current (planarization) all is to rely on chemical mechanical milling tech to finish, the worn character of the anisotropic of its uniqueness also can be applicable to vertically to reach that element shallow trench isolation in the making, FEOL of the mosaic texture of horizontal metal interconnect (interconnects) is made and making, MEMS (micro electro mechanical system) planarization and the flat-panel screens making etc. of advanced device except the planarization that is used for the crystal column surface profile.
In the technology of shallow slot isolation structure, after using high density chemistry vapour deposition process to insert silica in the irrigation canals and ditches, then be adopt chemical mechanical milling tech return the mill oxide layer to suitable thickness so that planarization.Generally speaking, be to use tripoli (Silica) with the slurry that grinds herein as the grinding oxide layer, yet, when the pattern density of oxide layer is uneven, the area that pattern density is high removes speed can be very fast, add tripoli and have, tend to cause the oxide layer in the high area of pattern density and silicon nitride (hardcoat layer) is excessively removed and cause dish to fall into (dishing) phenomenon, have a strong impact on the uniformity of element silica and the not high problem of grinding selectivity ratio of silicon nitride (hardcoat layer) that is positioned at its below.Therefore, the known method of avoiding this problem is to form anti-phase light shield (Reverse-tone mask) so that its pattern density homogenizing on oxide layer.Yet adopting this method but to have must increase by one lithography technology to form anti-phase light shield, the problem that makes the increase of process complications and cost.
Therefore, a kind of new slurry that grinds is used in the ditch that grinds shallow slot isolation structure and fills out oxide layer, and wherein to grind the main material of slurry be cerium oxide (CeO to this kind
2), and this kind grind slurry silica and silicon nitride had high grinding selectivity ratio, therefore, even the technology of the cover curtain that do not reverse also can not produce the situation that silicon nitride layer (hardcoat layer) is excessively removed.
Yet, using cerium oxide to grind slurry and but have following problem, Figure 1A to Fig. 1 C is that known a kind of this cerium oxide that uses grinds the flow process generalized section that slurry carries out chemical mechanical milling tech.Please refer to Figure 1A, a substrate 100 is provided, and in substrate 100, have layer 102 to be ground, and layer 102 to be ground is for having the surface that height rises and falls.Then, the side that substrate 100 is had layer 102 to be ground is placed towards the grinding pad 110 of a grinder, and the slurry that grinds that will have cerium oxide abrasive grain 120 simultaneously is fed on the grinding pad 110.
Then, please refer to Figure 1B, carry out cmp, the grinding for the treatment of the protuberance of grinding layer 102 this moment is what carry out simultaneously with the step of abrasive grains 120 being inserted the space between the layer to be ground 102.Yet for this cerium oxide ground slurry, in fact Ci Shi grinding did not almost tell on, but carries out abrasive grains 120 is inserted the action in space.
At last, please refer to Fig. 1 C, after cerium oxide abrasive grain 120 fills up the space between the layer 102 to be ground, just can actually treat grinding layer 102 this moment and produce the effect of grinding.
In above-mentioned chemical mechanical milling tech, owing to must expend the plenty of time so that abrasive grains just can be ground after inserting the space of layer to be ground fully, make that the use amount of grinding slurry is also higher, therefore, no matter be to see it, all need long time and higher cost from time face or cost face.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of chemical mechanical milling tech and device, can reduce the consumption of abrasive grains.
A further object of the present invention provides a kind of chemical mechanical milling tech and device, significantly to reduce manufacturing cost and time.
Another object of the present invention provides a kind of chemical mechanical milling tech and device, takes place to prevent the phenomenon that dish falls into.
According to above-mentioned and other purpose, the present invention proposes a kind of chemical mechanical milling tech, be suitable for utilizing grinding to starch and grind suprabasil several things to be ground, it is characterized in that, utilize a grinding pad that substrate is carried out before the cmp, utilize a soft grinding pad that a pre-grinding technics is carried out in substrate earlier, in order to remove the protuberance of thing to be ground, wherein the material density of the general grinding pad of the material density of soft grinding pad is low.
In embodiments of the present invention, grind the material of slurry and can select for use cerium oxide to grind slurry.And the present invention can adopt the same grinding pad with unlike material to carry out pre-grinding technics and cmp.
The present invention proposes in addition a kind of flatening process of semiconductor element, is suitable for planarization one suprabasil several things to be ground, and its step comprises that the supply cerium oxide grinds starches on one first grinding pad, and wherein the material of first grinding pad is a deformable material.Afterwards, utilize first grinding pad to treat abrasive material and carry out phase I grinding, to remove the protuberance of thing to be ground.Subsequently, after the protuberance of waiting until thing to be ground is removed, utilizes one second grinding pad that a second stage is carried out in substrate and grind, wherein second grinding pad is hard than first grinding pad.
The present invention proposes a kind of rotary chemical mechanical polishing device again, comprises one first grinding table, one second grinding table, one first grinding pad, one second grinding pad and a grinding head.Wherein, first grinding pad is disposed at the first grinding table surface, and second grinding pad is to be disposed at the second grinding table surface, and wherein the hardness of second grinding pad is greater than the hardness of first grinding pad.Grinding head then is to be disposed at the grinding table top, and in order to fix a wafer to be ground, wherein the porosity of the material of this first grinding pad is higher than the porosity of the material of this second grinding pad.
The present invention reintroduces a kind of linear formula chemical mechanical polishing device, comprise one first circulating grinding pad, one second circulating grinding pad and a grinding head, wherein the hardness of the second circulating grinding pad is greater than the hardness of the first circulating grinding pad, and grinding head is disposed at first and second circulating grinding pad top, in order to fix a wafer to be ground, wherein the porosity of the material of this first grinding pad is higher than the porosity of the material of this second grinding pad.
The present invention is owing to utilizing before general grinding pad carries out cmp, but utilize a slightly deformed and low density soft grinding pad earlier, so that slightly the soft grinding pad of distortion can increase contact area with protuberance, and the abrasive grains of grinding in the slurry is embedded in the hole on soft grinding pad surface, and can directly carries out the grinding of thing to be ground.Therefore, the present invention can save known abrasive grains such as spend in and fill up plenty of time between the layer to be ground, and reduces the consumption that grinds slurry.And the abrasive grains of grinding in the slurry as everyone knows to be added is a kind of expensive object, so the present invention can significantly reduce manufacturing cost.
In addition, when the present invention is applied to common shallow slot isolation structure (shallow trenchisolation, be called for short STI) time, can adopt cerium oxide (CeO2) abrasive grains, because it has high grinding selectivity ratio to silicon nitride/oxide, therefore, even do not carry out anti-phase light shield technology, the generation that also can avoid dish to fall into phenomenon has the silicon nitride layer of good flatness with formation, also the lithography technology of the required execution of anti-phase light shield technology can be omitted simultaneously, thereby the complexity and the manufacturing cost of technology can be reduced.
Description of drawings
Figure 1A to Fig. 1 C is that known a kind of cerium oxide that uses grinds the flow process generalized section that slurry carries out chemical mechanical milling tech; And
Fig. 2 A to Fig. 2 C is the planarization manufacturing process generalized section according to the semiconductor element of a preferred embodiment of the present invention;
Fig. 3 is the schematic diagram according to the rotary chemical mechanical polishing device of a preferable enforcement of the present invention; And
Fig. 4 is the schematic diagram according to the linear formula chemical mechanical polishing device of a preferable enforcement of the present invention.
100,200: substrate
102: layer to be ground
110,210,304,402: grinding pad
120: the silica abrasive grains
202: silicon nitride layer
204: silicon oxide layer
206: irrigation canals and ditches
208: oxide layer
209: protuberance
212,302,400: soft grinding pad
220: abrasive grains
300: grinding table
306: grinding head
308: wafer
Embodiment
The invention provides a kind of cmp (Chemical Mechanical Polishing, be called for short CMP), can be applied on the flatening process of various semiconductor elements, for example make shallow slot isolation structure (shallow trench isolation, abbreviation STI) flatening process (planarization) during, right the present invention can be used in the flatening process of other different structure in response to various situations, and all spirit according to the invention all is applicable to category of the present invention.
Fig. 2 A to Fig. 2 C is the planarization manufacturing process generalized section according to the semiconductor element of a preferred embodiment of the present invention.And, be to be example in present embodiment with the flatening process during making shallow slot isolation structure.
Please refer to 2A figure, a substrate 200 is provided, and in substrate 200, has a silicon nitride layer 202, and between silicon nitride layer 202 and substrate 200, one silica layer 204 is arranged.In addition, also be formed with several irrigation canals and ditches 206 in substrate 200, the method that wherein forms irrigation canals and ditches 206 has a variety of, and for example common method utilizes little shadow and etch process to remove patterned sin layer 202 and silicon oxide layer 204, continue etching substrate 200 again, to form irrigation canals and ditches 206.Afterwards, in substrate 200, cover layer of oxide layer 208, wherein oxide layer 208 for example is high-density plasma (high density plasma is called for short HDP) oxide layer, boron-phosphorosilicate glass (BPSG), phosphorosilicate glass (PSG), tetraethyl orthosilicate (TEOS) oxide layer or other insulation material layers.
Then, please refer to Fig. 2 B, the side that substrate 200 is had thing to be ground (oxide layer 208) is placed towards a soft grinding pad (soft polishing pad) 212, the slurry (slurry) that grinds that will have abrasive grains (polishing particle) 220 simultaneously is fed on the soft grinding pad 212, the wherein employed slurry that grinds for example is that cerium oxide grinds slurry, but and employed soft grinding pad 212 grinding pad that is a kind of slightly deformed materials, and the density of its general hard grinding pad is low, the porosity height, subsequently, use the chemical mechanical milling tech that soft grinding pad 212 carries out first section (also or can be considered as pre-grinding technics), this moment is when the oxide layer 208 of surface height fluctuating touches soft grinding pad 212, soft grinding pad 212 meetings slightly deformed as shown in this figure, make the soft grinding pad 212 and the contact area of the protuberance 209 of oxide layer 208 increase, and, because the porosity of soft grinding pad 212 is higher, make abrasive grains 220 can be embedded in soft grinding pad 212 surfaces, therefore, need not wait for that abrasive grains 220 inserts the space of oxide layer 208 fully this moment, will begin to grind and remove the protuberance 209 of oxide layer 208.
Afterwards, please refer to Fig. 2 C, when passing through to use soft grinding pad 212 with after the protuberance 209 of oxide layer 208 is removed, the grinding pad 210 of then using general (hard) instead to be to carry out second section cmp (also or can be considered as general grinding technics) to substrate 200, wherein the material of grinding pad 210 is that the material density height and the porosity of softer grinding pad 212 is low.At this moment, because the protuberance 209 of oxide layer 208 has been removed, therefore, the abrasive grains 220 of grinding slurry can act on is participated in directly grinding by the oxide layer 208 of slightly planarization, adding this grinds slurry system silica and silicon nitride is had high grinding selectivity ratio, thereby make that behind the grinding technics of oxide layer 208, silicon nitride layer 202 can have uniform flatness.In addition, the present invention can adopt the same grinding pad with unlike material to carry out the described step of embodiment, for example on same grinding table (polishing table), have soft grinding pad and general grinding pad simultaneously, can reach the planarization purpose more efficiently thus.
In addition, the present invention also proposes two kinds of chemical mechanical polishing devices, can please refer to Fig. 3 and Fig. 4 in order to implement aforementioned technology.
Fig. 3 is the schematic diagram according to the rotary chemical mechanical polishing device of a preferable enforcement of the present invention.Please refer to Fig. 3, it comprises a grinding table (polishing table) 300,1 first grinding pad 302, one second grinding pad 304 and a grinding head 306.Wherein, first grinding pad 302 is disposed at the part surface of grinding table 300, and second grinding pad 304 is another part surfaces that are disposed at grinding table 300, to reach the planarization purpose more efficiently.Wherein, the hardness of second grinding pad 304 is greater than the hardness of first grinding pad 302, and the porosity of the material of first grinding pad 302 is higher than the porosity of the material of second grinding pad 304.306 of grinding heads are to be disposed at grinding table 300 tops, in order to fix a wafer 308 to be ground, it for example is a layer to be ground, and as an oxide layer, and this oxide layer can comprise high-density plasma oxide layer, boron-phosphorosilicate glass, phosphorosilicate glass or tetraethyl orthosilicate (TEOS) oxide layer.
And Fig. 4 is the schematic diagram according to the linear formula chemical mechanical polishing device of a preferable enforcement of the present invention.Please refer to Fig. 4, it comprises by one first circulating grinding pad 400, one second a circulating grinding pad 402 and a grinding head (shown in the 3rd figure) that sees through as two pulleys (not illustrating) transmission, wherein the hardness of the second circulating grinding pad 402 is greater than the hardness of the first circulating grinding pad 400, and grinding head is disposed at first and second circulating grinding pad 400 and 402 tops, in order to fix a wafer to be ground.
In sum, characteristics of the present invention are utilizing before general grinding pad carries out cmp, but utilize the soft grinding pad of a slightly deformed to grind earlier, so that slightly the soft grinding pad of distortion can increase contact area with the protuberance of layer to be ground, and abrasive grains is embedded in the hole on soft grinding pad surface, and can directly carries out the grinding of thing to be ground.Therefore, the present invention needn't expend the space that a large amount of time waiting abrasive grains are inserted layer to be ground fully when grinding at first, thus can significantly reduce the process time, and reduce the consumption that grinds slurry.And the abrasive grains of grinding in the slurry as everyone knows to be added is a kind of expensive object, so the present invention also can significantly reduce manufacturing cost.
In addition, because when the present invention is applied to common shallow slot isolation structure (STI), can adopt the cerium oxide abrasive grain, because it has high grinding selectivity ratio to silicon nitride/oxide, therefore, even do not carry out anti-phase light shield technology, the generation that also can avoid dish to fall into phenomenon has the silicon nitride layer of good flatness with formation, also the lithography technology of the required execution of anti-phase light shield technology can be omitted simultaneously, thereby the complexity and the manufacturing cost of technology can be reduced.
Claims (17)
1. chemical mechanical milling tech, be suitable for utilizing one to grind slurry grinding one suprabasil a plurality of things to be ground, it is characterized in that, utilize a grinding pad that this substrate is carried out before the cmp, utilize a soft grinding pad that a pre-grinding technics is carried out in this substrate earlier, to remove the protuberance of those things to be ground, wherein the material density of this soft grinding pad is low than the material density of this grinding pad.
2. chemical mechanical milling tech as claimed in claim 1 is characterized in that the porosity of the material of this soft grinding pad is higher than the porosity of the material of this grinding pad.
3. chemical mechanical milling tech as claimed in claim 1 is characterized in that, this grinds slurry and comprises that cerium oxide grinds slurry.
4. chemical mechanical milling tech as claimed in claim 1 is characterized in that, those things to be ground comprise an oxide layer.
5. chemical mechanical milling tech as claimed in claim 4 is characterized in that, this oxide layer comprises high-density plasma oxide layer, boron-phosphorosilicate glass, phosphorosilicate glass or tetraethyl orthosilicate oxide layer.
6. the flatening process of a semiconductor element is suitable for planarization one suprabasil a plurality of things to be ground, it is characterized in that its step comprises:
Supply a cerium oxide and grind and starch on one first grinding pad, wherein the material of this first grinding pad is a deformable material;
Utilize this first grinding pad that those things to be ground are carried out a phase I and grind, remove the protuberance of those things to be ground; And
Utilize one second grinding pad that a second stage is carried out in this substrate and grind, wherein the hardness of this second grinding pad is greater than the hardness of this first grinding pad.
7. the flatening process of semiconductor element as claimed in claim 6 is characterized in that, the porosity of the material of this first grinding pad is higher than the porosity of the material of this second grinding pad.
8. the flatening process of semiconductor element as claimed in claim 7 is characterized in that, those things to be ground comprise an oxide layer.
9. the flatening process of semiconductor element as claimed in claim 8 is characterized in that, this oxide layer comprises high-density plasma oxide layer, boron-phosphorosilicate glass, phosphorosilicate glass or tetraethyl orthosilicate oxide layer.
10. a rotary chemical mechanical polishing device is characterized in that, comprising:
One first grinding table has one first grinding pad, is disposed at the surface of this first grinding table;
One second grinding table has one second grinding pad, is disposed at the surface of this second grinding table, and wherein the hardness of this second grinding pad is greater than the hardness of this first grinding pad; And
One grinding head is disposed at this at least one grinding table top, and it fixes a wafer to be ground, and wherein the porosity of the material of this first grinding pad is higher than the porosity of the material of this second grinding pad.
11. rotary chemical mechanical polishing device as claimed in claim 10 is characterized in that, this wafer to be ground comprises a layer to be ground.
12. rotary chemical mechanical polishing device as claimed in claim 11 is characterized in that, this layer to be ground comprises an oxide layer.
13. rotary chemical mechanical polishing device as claimed in claim 12 is characterized in that, this oxide layer comprises high-density plasma oxide layer, boron-phosphorosilicate glass, phosphorosilicate glass or tetraethyl orthosilicate oxide layer.
14. a linear formula chemical mechanical polishing device is characterized in that, comprising:
One first circulating grinding pad;
One second circulating grinding pad is disposed at by this first circulating grinding pad, and wherein the hardness of this second circulating grinding pad is greater than the hardness of this first circulating grinding pad; And
One grinding head, be disposed at this first with this second circulating grinding pad top, it fixes a wafer to be ground, wherein the porosity of the material of this first grinding pad is higher than the porosity of the material of this second grinding pad.
15. linear formula chemical mechanical polishing device as claimed in claim 14 is characterized in that, this wafer to be ground comprises a layer to be ground.
16. linear formula chemical mechanical polishing device as claimed in claim 15 is characterized in that, this layer to be ground comprises an oxide layer.
17. linear formula chemical mechanical polishing device as claimed in claim 16 is characterized in that this oxide layer comprises high-density plasma oxide layer, boron-phosphorosilicate glass, phosphorosilicate glass or tetraethyl orthosilicate oxide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031481116A CN1316571C (en) | 2003-07-02 | 2003-07-02 | Chemically machinery milling technique and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031481116A CN1316571C (en) | 2003-07-02 | 2003-07-02 | Chemically machinery milling technique and device |
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| Publication Number | Publication Date |
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| CN1567539A CN1567539A (en) | 2005-01-19 |
| CN1316571C true CN1316571C (en) | 2007-05-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB031481116A Expired - Fee Related CN1316571C (en) | 2003-07-02 | 2003-07-02 | Chemically machinery milling technique and device |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010023829A1 (en) | 2008-08-29 | 2010-03-04 | 信越半導体株式会社 | Polishing head and polishing apparatus |
| CN102101263A (en) * | 2009-12-18 | 2011-06-22 | 安集微电子（上海）有限公司 | Chemically mechanical polishing method |
| CN108247528B (en) * | 2016-12-29 | 2020-08-28 | 中芯国际集成电路制造(上海)有限公司 | Method for processing grinding pad |
| CN111805413A (en) * | 2020-07-23 | 2020-10-23 | 中国科学院微电子研究所 | Chemical mechanical polishing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6062968A (en) * | 1997-04-18 | 2000-05-16 | Cabot Corporation | Polishing pad for a semiconductor substrate |
| JP2000158325A (en) * | 1998-11-26 | 2000-06-13 | Promos Technol Inc | Device and method for chemical and mechanical polishing |
| US6315645B1 (en) * | 1999-04-14 | 2001-11-13 | Vlsi Technology, Inc. | Patterned polishing pad for use in chemical mechanical polishing of semiconductor wafers |
| US6431959B1 (en) * | 1999-12-20 | 2002-08-13 | Lam Research Corporation | System and method of defect optimization for chemical mechanical planarization of polysilicon |
-
2003
- 2003-07-02 CN CNB031481116A patent/CN1316571C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6062968A (en) * | 1997-04-18 | 2000-05-16 | Cabot Corporation | Polishing pad for a semiconductor substrate |
| JP2000158325A (en) * | 1998-11-26 | 2000-06-13 | Promos Technol Inc | Device and method for chemical and mechanical polishing |
| US6315645B1 (en) * | 1999-04-14 | 2001-11-13 | Vlsi Technology, Inc. | Patterned polishing pad for use in chemical mechanical polishing of semiconductor wafers |
| US6431959B1 (en) * | 1999-12-20 | 2002-08-13 | Lam Research Corporation | System and method of defect optimization for chemical mechanical planarization of polysilicon |
Non-Patent Citations (1)
| Title |
|---|
| US6421959B1 B24B1/00，10，12，13，15，17，18，说明书第2栏第18.第3栏第40行，附图1.3 2002 * |
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| CN1567539A (en) | 2005-01-19 |
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