CN1304874C - Raster translation optical modulator and array - Google Patents
Raster translation optical modulator and array Download PDFInfo
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- CN1304874C CN1304874C CNB2005100201868A CN200510020186A CN1304874C CN 1304874 C CN1304874 C CN 1304874C CN B2005100201868 A CNB2005100201868 A CN B2005100201868A CN 200510020186 A CN200510020186 A CN 200510020186A CN 1304874 C CN1304874 C CN 1304874C
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Abstract
The present invention relates to a grating translation light modulator and an array. The light modulator of the present invention comprises a silicon substrate, a bottom layer reflecting face, a top layer reflecting face and a bias voltage exerting device, wherein the silicon substrate has an insulating layer and a negative electrode; the bottom layer reflecting face is plated on the negative electrode; the top layer reflecting face is positioned on the bottom layer reflecting face, and four sides of the top layer reflecting face are connected with cantilever beams so that the top layer reflecting face is supported; the top layer reflecting face is evenly etched with a hollow-out rectangular channel so as to form the grating; a pull-down voltage is exerted on the bias voltage exerting device positioned between the top layer reflecting face and the bottom layer reflecting face. The grating translation light modulator is used for modulating the phase of the incident light by using the grating with the rectangular channel with changeable depth. The grating translation light modulator has the advantages of high light efficiency, high modulation speed, high contrast grade, high brightness, good evenness, simple manufacturing technology, high non-defective rate, large effective utilization area, etc.
Description
Technical field
The present invention relates to a kind of beam modulation device, in particular, the present invention relates to a kind of raster translation optical modulator and array, this device is to utilize the phase place of the rectangular channel grating pair incident light of variable depth to modulate.
Background technology
Development along with digital technology, large screen display, especially the maturation of HD digital TV tech, many devisers and inventor have managed to develop the photomodulator that can use separately or use with other modulators, and wherein the photomodulator of making based on the MOEMS technology obtains development at a high speed and application widely with its good performance.They have common advantage on being applied to display device the time: light extraction efficiency is very high, the sharpness height, modulating speed is fast, gray level is more, can with digital television techniques index compatibility, contrast, brightness and homogeneity are all very outstanding, signal is easy to handle or the like.
In this class device, be representative with digital micro-mirror device (DMD) and grating light valve (GLV), their commerce is used and has been obtained great success.DMD is up to a million the modulators that deflectable reflection micro mirror constitutes by the manufacturing of MOEMS technology.The image of the close clearance order projection of DMD micro mirror produces finer seamless picture, and it is not high to analyze Z-TEK.GLV and DMD difference are that it is to utilize the optical grating diffraction principle to realize the light modulation, and its response speed is higher, and circuit is simple, and manufacturing process is simple, the yields height.
But DMD and GLV also have weak point.
The defective of DMD is that its complex multilayered structures causes complex manufacturing process, and yields is low.
The shortcoming of GLV is: it be cannot say for sure to demonstrate,prove the ribbon that constitutes grating and is in the same plane; Gap affects diffraction efficiency between the grating band; It is real on the removable slit that effectively the diffraction zone is too little; Particularly single length in pixels is big, area is big, makes GLV can only make linear array, must add optical scanning mechanism and just can be used for optical imaging system, and complicacy and assembly difficulty that this has just increased optical facilities have increased the cost of complete machine.
Can the existing light modulator technologies of contrast respectively has its relative merits, a kind of photomodulator be arranged, when having above-mentioned photomodulator advantage concurrently, can avoid its shortcoming again, accomplish effective optical area height on the pixel, be easy to integrated battle array, technology is simple, the yields height, and this becomes the original intention of our invention.
Summary of the invention
Low for effective diffraction area of the shortcoming that overcomes the DMD complex process and GLV, as to be difficult to be integrated into face battle array shortcoming, the object of the present invention is to provide a kind of raster translation optical modulator, employing is similar to the diffraction principle of GLV, incident light is carried out phase modulation (PM), what increase device effectively utilizes area, improve optical efficiency and contrast, simplified manufacturing technique.
The technical solution adopted for the present invention to solve the technical problems is as follows:
The raster translation optical modulator that the present invention proposes adopts the diffraction principle that is similar to GLV, and incident light is carried out phase modulation (PM), makes microdevice with the MOEMS technology.It is based on existing IC technology, at silicon chip higher slice structure device.
Comprise following structure:
One silicon base, deposit is etched with insulation course and negative electrode on it;
One is plated on the bottom reflecting surface on the negative electrode;
One is positioned on the bottom reflecting surface, four limits are connected and supported top layer reflecting surface with semi-girder, the top layer reflecting surface plates the metal reverberation and forms on elastic substrates, this top layer reflecting surface is gone out the hollow out rectangular channel by uniform etching, form grating, leave suitable spacing between two reflectings surface, the top layer reflecting surface is a positive electrode;
Make the top layer reflecting surface be suspended in the semi-girder of bottom reflecting surface top, this semi-girder the outside, four limits of top layer reflecting surface or under, form with four jiaos of rotation symmetric support is connected with top layer reflecting surface four limits, and the top layer reflecting surface is supported on the bottom reflecting surface.
During making alive, spacing is not n λ/2 for gap variable between top layer reflecting surface and the bottom reflecting surface, between; Add fixedly bias voltage V
1The time, spacing is (2n-1) λ/4; If get n=1, then ought apply voltage range at 0-V
1Between the time, spacing is linear adjustable between λ/2 to λ/4.Use a plurality of such photomodulators to form array, each photomodulator can independently apply bias voltage, and the top layer reflecting surface is done vertical translation, forms the different dot matrix of diffracting effect.
The present invention is because its simple double-decker can solve the DMD complex process, the problem that yields is low with general IC surface processing technique realization fully.The semi-girder on its four limit is connected with the top layer reflecting surface with four jiaos of forms of rotating symmetric support, and parallels layout with the top layer reflecting surface simultaneously, makes that the area of the effective grating in top layer reflecting surface center is enough big, has solved the problem of GLV useful area deficiency.The mode of motion of its vertical translation has guaranteed that whole top layer reflecting surface all is smooth when descending.When integrated array, adjacent semi-girder can be arranged on the line alternately, has reduced pixel pitch.
Advantage of the present invention is: the light extraction efficiency height, modulating speed is fast, contrast is high, brightness is high, good uniformity, and manufacturing process is simple simultaneously, and the yields height effectively utilizes area big.
This photomodulator can be widely used on demonstration, projection, printing, optical communication, the spectrometer.
Description of drawings
Fig. 1 is single random grating translation optical modulator structural drawing of the present invention.
Fig. 2 a is the middle sectional structural map of single random grating translation optical modulator.
Fig. 2 b is single random grating translation optical modulator at the diffraction synoptic diagram of powering state not.
Fig. 3 a is that single random grating translation optical modulator powers up the synoptic diagram that the back produces vertical translation.
Fig. 3 b is the synoptic diagram diffraction synoptic diagram after single random grating translation optical modulator powers up.
Fig. 4 is the synoptic diagram that is formed array by raster translation optical modulator shown in Figure 1.
Fig. 5 is the structural drawing of a kind of form of distortion of single random grating translation optical modulator.
Fig. 6 is the synoptic diagram that is formed array by raster translation optical modulator shown in Figure 5.
Fig. 7 is the structural drawing of the another kind of form of distortion of single random grating translation optical modulator.
Fig. 8 is the synoptic diagram that form of distortion shown in Figure 7 constitutes modulator array.
Among the figure: 1. silicon substrate, 2. oxide, 3. insulation course, 4. negative electrode 5. bottom reflectings surface 6. top layer reflectings surface, 7, semi-girder, 8. bias voltage applying device.
Embodiment
The present invention is further described below in conjunction with drawings and Examples:
Among Fig. 1, deposit growth one deck oxide 2 on silicon substrate 1, the insulation course of deposit etching again 3, negative electrode 4, plate bottom reflecting surface 5, by the deposit sacrifice layer, form top layer reflecting surface 6, the more needed grating of etching thereon, this grating is positive electrode, and last releasing sacrificial layer just can obtain structure as shown in Figure 1.In fact incident ray has received the dual modulation of the bottom grating of top layer grating and hollow out, and this modulation effect changes with two-layer grating space is different, and its principle is similar to the rectangular channel phase grating.And its spacing can be regulated by bias voltage applying device 8.End face reflection horizon 6 is supported by four rotational symmetric semi-girders 7, totally four of semi-girders 7, by upright supports on silicon substrate 1, be positioned at the outside, four limits of square top layer reflecting surface 6, and with top layer reflecting surface parallel arrangement in same plane, keep certain interval, the length of arm is no more than half of the monolateral length of side of top layer reflecting surface, four semi-girders 7 by position relative in the middle of 6 four limits, end face reflection horizon along of the four jiao extensions of a direction to the end face reflection horizon, and connect this four angles, form unique swing-arm type supporting construction, promptly reached the effect that flexible support is provided for top layer reflecting surface 6, make that again effective area of raster at top layer reflecting surface 6 centers is enough big, solved the problem of GLV useful area deficiency.Because this raster translation optical modulator has simple double-decker, can realize with general IC surface processing technique fully, solved the DMD complex process, the problem that yields is low.
Among Fig. 2 a and Fig. 2 b, bias voltage applying device 8 provides bias voltage V=0, making alive not between bottom reflecting surface 5 and the top layer reflecting surface 6, and promptly both keep initial separation: the integral multiple of λ, wherein λ is a lambda1-wavelength.Therefore incident beam differs 2 π through the two-beam line that top layer reflecting surface 6 and 5 reflections of bottom reflecting surface obtain on phase place, meet interfere after, light intensity concentrates on the zero level of diffraction image.
Among Fig. 3 a and Fig. 3 b, pass through bias voltage applying device 8 making alive V=V1 between bottom reflecting surface 5 and the top layer reflecting surface 6, top layer reflecting surface 6 is subjected to the effect of electrostatic force λ/4 distances of being left behind, the phase differential of the two-beam line that obtains through the reflection of top layer reflecting surface and bottom reflecting surface is a pi/2, the diffraction intensity that obtains like this, the place is almost nil in zero level, and obtains largest light intensity at ± 1 grade of place.Therefore, the light intensity magnitude at ± 1 grade of place is collected ± 1 grade light intensity with the change in displacement that flat board descends, and has then realized switch or modulating action to incident light.Because semi-girder has enough flexibilities, it is smooth that the grating on the top layer reflecting surface 6 keeps, and solved the drop-down uneven problem of strip grating of GLV effectively.
Fig. 4 has shown the array that is formed by a plurality of single pixel cantilevered grating light modulators.Since top layer reflecting surface 6 by semi-girder 7 the form of Yi Sijiao rotation symmetric support be connected support, the length of semi-girder 7 is no more than half of single pixel wide, so adjacent semi-girder 7 can be arranged on the line alternately, has reduced pixel pitch, has improved the filling rate of pixel.After pixel, can realize the demonstration of coloured image to different wave length λ optimal design different institutions size.
The concrete form that among the present invention the spiral arm of top layer reflecting surface is supported also has various ways, and Fig. 5 and Fig. 7 are exactly other two kinds of distressed structures.
Structure shown in Figure 5 and the difference of Fig. 1 are that four semi-girders 7 are extended to the middle part, four limits of top layer reflecting surface along a direction by 6 four jiaos of relative positions of top layer reflecting surface, and are connected with the middle part on this four limit, form swing-arm type and support.This structure is seen Fig. 6 when formation face battle array, adjacent semi-girder also can be arranged on the line alternately, has reduced pixel pitch, has improved the filling rate of pixel.
Structure shown in Figure 7 is for further overcoming the shortcoming that semi-girder takies effective area of raster, semi-girder 7 is hidden under the top layer reflecting surface 6, and structure is as good as shown in other structure and Fig. 1.At this moment, four semi-girders 7 by upright supports on silicon base 1, and four limits that are parallel to the square modulator are arranged, keep certain interval in vertical direction with the top layer reflecting surface, and are connected with the top layer reflecting surface of its top by the column that the semi-girder top makes progress.This method has promptly reached same flexible support effect, makes top layer reflecting surface 6 can design bigger optics useful area again.Simultaneously, because semi-girder is more near bottom reflecting surface 5, so better electric drive characteristic is arranged, top layer reflecting surface 6 is more smooth during decline., the improvement of performance will be finished by increasing process complexity.Fig. 8 is the single random grating flatly moving type optical modulation formation array with structure shown in Figure 7, because the structure of the semi-girder of hiding makes the slit between pixel significantly reduce with respect to effective optical area, has strengthened the pixel filling rate.
Bias voltage applying device 8 adopts this area existing mature technology, adopts driven more.According to different array requests, adopt active driving or passive drive mode.The electrode outlet line of driving circuit can obtain when making this structure simultaneously.
Invention has been described more than to adopt embodiment.Those have only those skilled in the art to read just become after the disclosure file open-and-shut improvement and modification, still belong to the application's spirit and category.
Claims (6)
1. raster translation optical modulator is characterized in that it comprises:
A. a silicon base, deposit is etched with insulation course and negative electrode on it;
B. a bottom reflecting surface that is plated on the negative electrode;
C. one is positioned on the bottom reflecting surface, four limits are connected and supported top layer reflecting surface with semi-girder, the top layer reflecting surface plates the metal reverberation and forms on elastic substrates, this top layer reflecting surface is gone out the hollow out rectangular channel by uniform etching, form grating, leave suitable spacing between two reflectings surface, the top layer reflecting surface is a positive electrode;
D. make the top layer reflecting surface be suspended in the semi-girder of bottom reflecting surface top, this semi-girder lower support is on silicon base, be located at the outside, four limits of top layer reflecting surface, be connected with top layer reflecting surface four limits, the top layer reflecting surface is supported on the bottom reflecting surface with four jiaos of forms of rotating symmetric support;
E. actuation voltage is added in the bias voltage applying device between top layer reflecting surface and the bottom reflecting surface, can produces the driving voltage of varying level, different frequency.
2. photomodulator according to claim 1 is characterized in that: the top layer reflecting surface is suspended in the gap variable between the bottom reflecting surface, and during making alive, spacing is not n λ/2 between; Add fixedly bias voltage V
1The time, spacing is (2n-1) λ/4; Apply voltage range at 0-V
1Between the time, spacing is linear adjustable between n λ/2 to (2n-1) λ/4.
3. photomodulator according to claim 1 is characterized in that: semi-girder is positioned at the four limits outside of top layer reflecting surface, and with its parallel arrangement in same plane, the length of arm is no more than half of the monolateral length of side of top layer reflecting surface.
4, photomodulator according to claim 1 is characterized in that: semi-girder be positioned at top layer reflecting surface four limits under, parallel arrangement, the length of arm are no more than half of the monolateral length of side of top layer reflecting surface.
5. raster translation optical modulator array, it is characterized in that using a plurality of claims 1,2 or 4 described photomodulators to be arranged in array by row and column, each photomodulator can independently apply bias voltage, spacing of reflecting surface is all adjustable separately about it, forms the different dot matrix of diffracting effect.
6, a kind of raster translation optical modulator array, it is characterized in that using the described photomodulator of a plurality of claims 3 to be arranged in array by row and column, the semi-girder of adjacent light modulator is arranged on the line alternately, each photomodulator can independently apply bias voltage, spacing of reflecting surface is all adjustable separately about it, forms the different dot matrix of diffracting effect.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100201868A CN1304874C (en) | 2005-01-13 | 2005-01-13 | Raster translation optical modulator and array |
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| CNB2005100201868A CN1304874C (en) | 2005-01-13 | 2005-01-13 | Raster translation optical modulator and array |
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| CN1304874C true CN1304874C (en) | 2007-03-14 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102175321B (en) * | 2011-01-31 | 2012-08-29 | 重庆大学 | Multi-target imaging spectrograph based on grating moving light modulator (GMLM) |
| CN102175327B (en) * | 2011-01-31 | 2012-09-26 | 重庆大学 | Translational grating light valve Fourier spectrometer |
| CN102175322B (en) * | 2011-01-31 | 2012-09-26 | 重庆大学 | Imaging spectrometer based on grating translational light modulator |
| CN103885178B (en) * | 2014-03-26 | 2016-03-09 | 重庆大学 | MOEMS bistable state raster translation optical modulator and array thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5311360A (en) * | 1992-04-28 | 1994-05-10 | The Board Of Trustees Of The Leland Stanford, Junior University | Method and apparatus for modulating a light beam |
| CN1121590A (en) * | 1994-06-21 | 1996-05-01 | 松下电器产业株式会社 | Diffractive optical modulator and method for producing the same, infrared sensor including such a diffractive optical mouldator and method for producing the same, and display device including such.... |
| WO1999052006A2 (en) * | 1998-04-08 | 1999-10-14 | Etalon, Inc. | Interferometric modulation of radiation |
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2005
- 2005-01-13 CN CNB2005100201868A patent/CN1304874C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5311360A (en) * | 1992-04-28 | 1994-05-10 | The Board Of Trustees Of The Leland Stanford, Junior University | Method and apparatus for modulating a light beam |
| CN1121590A (en) * | 1994-06-21 | 1996-05-01 | 松下电器产业株式会社 | Diffractive optical modulator and method for producing the same, infrared sensor including such a diffractive optical mouldator and method for producing the same, and display device including such.... |
| WO1999052006A2 (en) * | 1998-04-08 | 1999-10-14 | Etalon, Inc. | Interferometric modulation of radiation |
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