CN1302522C - Terminal detection system for chemical and mechanical polisher - Google Patents
Terminal detection system for chemical and mechanical polisher Download PDFInfo
- Publication number
- CN1302522C CN1302522C CNB021198039A CN02119803A CN1302522C CN 1302522 C CN1302522 C CN 1302522C CN B021198039 A CNB021198039 A CN B021198039A CN 02119803 A CN02119803 A CN 02119803A CN 1302522 C CN1302522 C CN 1302522C
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- detection system
- endpoint detection
- polishing pad
- gas
- inner room
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Abstract
The present invention provides a terminal detection system of a chemical and mechanical polisher, which comprises a polishing platform, a polishing pad covered on the polishing platform, an inner chamber positioned in the polishing platform, and a gas flow system arranged around the inner chamber, wherein the gas flow system comprises a gas inlet and a gas outlet which are respectively used for leading dry gas into the inner chamber and discharging water vapor in the inner chamber. Because the gas flow system can discharge the water vapor deposited in the inner chamber, the problems of water vapor residue, etc. can be avoided to accurately detect the terminal of the chemical and mechanical polishing technology.
Description
Technical field
The invention provides a kind of endpoint detection system of chemical mechanical polishing apparatus, relate in particular to a kind of endpoint detection system of utilizing gas flow system to discharge steam.
Background technology
In ic manufacturing process now, for avoiding causing the harmful effect of subsequent technique, require to have become the problem that becomes more and more important for the planarization on each sedimentary deposit surface.With regard to existing planarization, chemico-mechanical polishing (chemical mechanical polishing, CMP) method of extensive use the most of can saying so at present.So-called CMP technology promptly is to utilize a burnishing device and a polishing agent (slurry) to remove the process at the unevenness place on the semiconductor wafer simultaneously.Its principle then is with respect to mechanical movement that semiconductor wafer carried out by burnishing device, the chemical reaction of adding between polishing agent and semiconductor wafer to be produced and form an effective polishing power, the surface planarization effectively in addition that this semiconductor wafer is exposed.
See also Fig. 1, Fig. 1 is the schematic diagram of the endpoint detection system 10 (endpoint detectionsystem) of existing CMP device.As shown in fig. 1, the endpoint detection system 10 of existing CMP device includes a polished land (polishing platen) 12, is equipped with a polishing pad (polishing pad) 14 on it.Polishing pad 14 is by a hard (hard) polishing pad 16, and one soft (soft) polishing pad 18 is formed.Wherein, soft polishing pad 18 is as the interface of 12 of polishing pad 14 and polished land, and hard polishing pad 16 then is in order to polish a semiconductor wafer 22 placed on it with polishing agent 20.In addition, in hard polishing pad 16, be provided with an observation window 24, and in the soft polishing pad 18 of observation window 24 belows and polished land 12, stay next inner room 26.When semiconductor wafer 22 rotated to observation window 24 tops, one is fixed in endpoint detecting meter (as laser interferometer (laser intefferometer)) 28 under the polished land 12 can penetrate a laser beam by observation window 24 and the surface of the semiconductor wafer 22 that arrives.Subsequently, CMP device 10 can be judged polishing end point by the folded light beam that semiconductor wafer 22 is reflected.
Yet, owing to have the deposition of pollutant on the surface of the inner room 26 of observation window 24 lower surfaces of the endpoint detection system 10 of existing CMP device and polished land 12 most probably, and for example, the polishing agent that condenses or steam or the like.Therefore, when laser beam passes through the inner room 26 of observation window 24 and polished land 12, then can scattering process take place because of suffering from these pollutants.That is to say that no matter be incident or laser light reflected light beam, its intensity all can significantly weaken.So the endpoint detecting result of CMP technology will be subjected to serious the interference and distortion, and then cause the erroneous judgement of terminal point and make the flatness of semiconductor wafer 22 can't reach standard.
Summary of the invention
So main purpose of the present invention is to provide a kind of chemico-mechanical polishing, and (chemical mechanicalpolishing, CMP) Zhuan Zhi endpoint detection system (endpoint detection system) is to solve the problem of above-mentioned existing CMP device.
According to claim of the present invention, a kind of endpoint detection system of chemical mechanical polishing apparatus is disclosed.This endpoint detection system includes a polished land (polishing platen), one is covered in the polishing pad (polishing pad) on this polished land, one is arranged in the inner room (chamber) of this polished land, and one be arranged at this inner room around gas flow system (gas flow system).Wherein, this gas flow system includes a gas access (gas inlet) and a gas vent (gas outlet), reaches the steam of discharging in this inner room in order to import dry gas in this inner room respectively.
Because the endpoint detection system of CMP device of the present invention is provided with a gas flow system around this inner room, be deposited on the steam of this inner room or an observation window lower surface in order to discharge, therefore can avoid having in the existing apparatus the residual problems of pollutant such as steam, and detect the terminal point of CMP (Chemical Mechanical Polishing) process exactly, so, then can significantly promote the productive rate of technology, and then reduce manufacturing cost.
Description of drawings
Fig. 1 is the schematic diagram of the endpoint detection system of existing chemical mechanical polishing apparatus; And
Fig. 2 is the schematic diagram of the endpoint detection system of chemical mechanical polishing apparatus of the present invention.
Description of reference numerals in the accompanying drawing is as follows:
10,30 CMP devices, 12 polished land
14 polishing pads, 16 hard polishing pads
18 soft polishing pad 20 polishing agents
22 semiconductor wafers, 24 observation windows
26 inner rooms, 28 endpoint detecting meters
32 gas accesses, 34 gas vents
Embodiment
See also Fig. 2, Fig. 2 is chemico-mechanical polishing of the present invention (chemical mechanical polishing, CMP) schematic diagram of Zhuan Zhi endpoint detection system (endpoint detection system) 30.As shown in Figure 2, endpoint detection system 30 includes a polished land (polishing platen) 12, one is covered in the polishing pad (polishing pad) 14 on the polished land 12, one is arranged in the inner room (chamber) 26 of polished land 12, and one is arranged at inner room 26 gas flow system (gas flow system) on every side.Wherein, this gas flow system includes a gas access (gas inlet) 32, in order to importing dry gas in inner room 26, and a gas vent (gas outlet) 34, in order to discharge the steam in the inner room 26.
According to a preferred embodiment of the invention, polishing pad 14 can be pair of lamina (bi-layer) structure, it includes hard (hard) polishing pad 16 that places the upper strata, for example, the known IC-1000 polishing pad of industry, and soft (soft) polishing pad 18 that places lower floor, for example a Suba IV polishing pad.Why adopt this double-deck polishing pad 14 to be because the soft polishing pad 18 of lower floor can be as the interface of 12 of polishing pad 14 and polished land, the hard polishing pad 16 on upper strata then can be in order to polish a semiconductor wafer 22 placed on it with polishing agent 20.So, then this double-deck polishing pad 14 can provide CMP technology the one preferred flatness and the uniformity.In addition, be provided with an observation window 24 in the hard polishing pad 16 of inner room 26 tops, when semiconductor wafer 22 rotates to observation window 24 tops, one is fixed in endpoint detecting meter (for example laser interferometer (laser interferometer)) 28 under the polished land 12 can penetrate a laser beam by observation window 24 and the surface of the semiconductor wafer 22 that arrives, and can carry out the program of endpoint detecting.
Because existing C MP technology can produce steam or the pollutants such as polishing agent that condense are deposited on the surface of inner room 26, so in endpoint detection system 30 of the present invention, a gas flow system is set around inner room 26, to get rid of the pollutants such as steam in the inner room 26.According to a preferred embodiment of the invention, the dry gas that gas access 32 is fed can be nitrogen or plant area's dry air (cleandry air, CDA).As for other forms of gas flow system, under situation not, also the part of gas vent 34 can be replaced with pump (pump) departing from technical spirit of the present invention, so, then pollutants such as steam can be discharged inner room 26 by the drive of dry gas and pump.Perhaps, gas flow system of the present invention also can be only with the pump effect, that is, only utilize pump to extract pollutant in the inner room 26 out, and omit the step that gas access 32 feeds dry gas.
Because hard polishing pad and the properties of materials of soft polishing pad own that general polishing pad is adopted, generation is condensed on interior chamber surface in the polished land and the observation window lower surface the polishing agent and the deposition of steam will be made.Therefore, penetrate a laser beam and during by existing observation window, will scattering process take place when the endpoint detecting meter of the endpoint detection system of existing CMP device because of suffering from these pollutants.As a result, no matter be incident or laser light reflected light beam, its intensity all can significantly weaken, and then causes the endpoint detecting result of CMP technology to be subjected to serious the interference and distortion.
Compare with the endpoint detection system of existing CMP device, be provided with a gas flow system in the endpoint detection system of the present invention, in order to pollutants such as the steam in the inner room are discharged by external strength, so then can avoid having in the existing apparatus problems such as pollutant deposition, and then can detect the terminal point of CMP (Chemical Mechanical Polishing) process exactly.So, then can significantly improve the productive rate of technology, and then reduce manufacturing cost.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (12)
1. the endpoint detection system of a chemical mechanical polishing apparatus, this endpoint detection system comprises:
One polished land;
One polishing pad is covered on this polished land;
One inner room is arranged in this polished land; And
One gas flow system, be arranged at this inner room around;
Wherein this gas flow system includes a gas access, in order to import dry gas in this inner room, reaches a gas vent, in order to discharge the steam in this inner room.
2. endpoint detection system as claimed in claim 1, wherein this polishing pad is the pair of lamina structure.
3. endpoint detection system as claimed in claim 2, wherein this double-decker of this polishing pad includes a hard polishing pad that places the upper strata, and a soft polishing pad that places lower floor.
4. endpoint detection system as claimed in claim 1, wherein this dry gas is a nitrogen.
5. endpoint detection system as claimed in claim 1, wherein this dry gas is plant area's dry air.
6. the endpoint detection system of a chemical mechanical polishing apparatus, this endpoint detection system comprises:
One polished land;
One polishing pad is covered on this polished land;
One inner room is arranged in this polished land; And
One gas flow system, be arranged at this inner room around.
7. endpoint detection system as claimed in claim 6, wherein this polishing pad is the pair of lamina structure.
8. endpoint detection system as claimed in claim 7, wherein this double-decker of this polishing pad includes a hard polishing pad that places the upper strata, and a soft polishing pad that places lower floor.
9. endpoint detection system as claimed in claim 6, wherein this gas flow system includes a gas access, in order to import dry gas in this inner room, reaches a pump, in order to discharge the steam in this inner room.
10. endpoint detection system as claimed in claim 9, wherein this dry gas is a nitrogen.
11. endpoint detection system as claimed in claim 9, wherein this dry gas is plant area's dry air.
12. endpoint detection system as claimed in claim 6, wherein this gas flow system includes a pump, in order to discharge the steam in this inner room.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021198039A CN1302522C (en) | 2002-05-15 | 2002-05-15 | Terminal detection system for chemical and mechanical polisher |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021198039A CN1302522C (en) | 2002-05-15 | 2002-05-15 | Terminal detection system for chemical and mechanical polisher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1458673A CN1458673A (en) | 2003-11-26 |
| CN1302522C true CN1302522C (en) | 2007-02-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021198039A Expired - Fee Related CN1302522C (en) | 2002-05-15 | 2002-05-15 | Terminal detection system for chemical and mechanical polisher |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1302522C (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7252871B2 (en) * | 2004-06-16 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad having a pressure relief channel |
| US7226339B2 (en) | 2005-08-22 | 2007-06-05 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
| US7179151B1 (en) * | 2006-03-27 | 2007-02-20 | Freescale Semiconductor, Inc. | Polishing pad, a polishing apparatus, and a process for using the polishing pad |
| US7494929B2 (en) | 2006-04-27 | 2009-02-24 | Applied Materials, Inc. | Automatic gain control |
| US8352061B2 (en) | 2008-11-14 | 2013-01-08 | Applied Materials, Inc. | Semi-quantitative thickness determination |
| KR101956838B1 (en) | 2009-11-03 | 2019-03-11 | 어플라이드 머티어리얼스, 인코포레이티드 | Endpoint method using peak location of spectra contour plots versus time |
| CN107571141B (en) * | 2017-08-18 | 2019-03-05 | 清华大学 | Offline debugging system and method for CMP process end point determination |
| CN109494148A (en) * | 2018-12-28 | 2019-03-19 | 苏州邱伦智能科技有限公司 | A kind of wafer scraping machine and its application method |
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| US6190234B1 (en) * | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
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| JP2001287160A (en) * | 2000-04-07 | 2001-10-16 | Seiko Epson Corp | Polishing end point detector and cmp apparatus equipped therewith |
| US6336841B1 (en) * | 2001-03-29 | 2002-01-08 | Macronix International Co. Ltd. | Method of CMP endpoint detection |
| CN1330360A (en) * | 2000-06-28 | 2002-01-09 | 国际商业机器公司 | Terminal test in chemical machinery polishing of cloisonnee structure |
| WO2002010729A1 (en) * | 2000-07-31 | 2002-02-07 | Asml Us, Inc. | In-situ method and apparatus for end point detection in chemical mechanical polishing |
| WO2002017381A2 (en) * | 2000-08-24 | 2002-02-28 | Koninklijke Philips Electronics N.V. | Method for preventing damage to wafers in a sequential multiple steps polishing process |
| WO2002018100A2 (en) * | 2000-08-31 | 2002-03-07 | Motorola, Inc. | Method and apparatus for measuring a polishing condition |
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2002
- 2002-05-15 CN CNB021198039A patent/CN1302522C/en not_active Expired - Fee Related
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2168203Y (en) * | 1993-08-27 | 1994-06-08 | 马福迎 | Ventilating cabinet |
| US6045439A (en) * | 1995-03-28 | 2000-04-04 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| CN1214536A (en) * | 1997-09-29 | 1999-04-21 | 西门子公司 | Apparatus and method for improved washing and drying of semiconductor wafers |
| US6251784B1 (en) * | 1998-12-08 | 2001-06-26 | International Business Machines Corporation | Real-time control of chemical-mechanical polishing processing by monitoring ionization current |
| US6190234B1 (en) * | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
| CN1280049A (en) * | 1999-07-12 | 2001-01-17 | 国际商业机器公司 | Conducting real time control to chemical mechanical polishing process of measuring shaft deformation |
| JP2001284300A (en) * | 1999-12-13 | 2001-10-12 | Applied Materials Inc | Method and apparatus for detecting polishing endpoint with optical monitoring |
| JP2001287160A (en) * | 2000-04-07 | 2001-10-16 | Seiko Epson Corp | Polishing end point detector and cmp apparatus equipped therewith |
| CN1330360A (en) * | 2000-06-28 | 2002-01-09 | 国际商业机器公司 | Terminal test in chemical machinery polishing of cloisonnee structure |
| WO2002010729A1 (en) * | 2000-07-31 | 2002-02-07 | Asml Us, Inc. | In-situ method and apparatus for end point detection in chemical mechanical polishing |
| WO2002017381A2 (en) * | 2000-08-24 | 2002-02-28 | Koninklijke Philips Electronics N.V. | Method for preventing damage to wafers in a sequential multiple steps polishing process |
| WO2002018100A2 (en) * | 2000-08-31 | 2002-03-07 | Motorola, Inc. | Method and apparatus for measuring a polishing condition |
| US6336841B1 (en) * | 2001-03-29 | 2002-01-08 | Macronix International Co. Ltd. | Method of CMP endpoint detection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1458673A (en) | 2003-11-26 |
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