CN1282239C - 紧凑磁阻随机访问存储器单元及其制造方法 - Google Patents
紧凑磁阻随机访问存储器单元及其制造方法 Download PDFInfo
- Publication number
- CN1282239C CN1282239C CNB018149324A CN01814932A CN1282239C CN 1282239 C CN1282239 C CN 1282239C CN B018149324 A CNB018149324 A CN B018149324A CN 01814932 A CN01814932 A CN 01814932A CN 1282239 C CN1282239 C CN 1282239C
- Authority
- CN
- China
- Prior art keywords
- layer
- hole
- random access
- unit
- access memories
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Abstract
Description
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/649,114 | 2000-08-28 | ||
US09/649,114 US6365419B1 (en) | 2000-08-28 | 2000-08-28 | High density MRAM cell array |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1505837A CN1505837A (zh) | 2004-06-16 |
CN1282239C true CN1282239C (zh) | 2006-10-25 |
Family
ID=24603516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018149324A Expired - Fee Related CN1282239C (zh) | 2000-08-28 | 2001-08-09 | 紧凑磁阻随机访问存储器单元及其制造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6365419B1 (zh) |
EP (1) | EP1316106A2 (zh) |
JP (1) | JP2004508707A (zh) |
KR (1) | KR100785261B1 (zh) |
CN (1) | CN1282239C (zh) |
AU (1) | AU2001283233A1 (zh) |
TW (1) | TW529163B (zh) |
WO (1) | WO2002019386A2 (zh) |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4149647B2 (ja) | 2000-09-28 | 2008-09-10 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US6490194B2 (en) | 2001-01-24 | 2002-12-03 | Infineon Technologies Ag | Serial MRAM device |
KR100399436B1 (ko) * | 2001-03-28 | 2003-09-29 | 주식회사 하이닉스반도체 | 마그네틱 램 및 그 형성방법 |
US6869855B1 (en) | 2001-09-02 | 2005-03-22 | Borealis Technical Limited | Method for making electrode pairs |
US6821907B2 (en) | 2002-03-06 | 2004-11-23 | Applied Materials Inc | Etching methods for a magnetic memory cell stack |
US6893893B2 (en) | 2002-03-19 | 2005-05-17 | Applied Materials Inc | Method of preventing short circuits in magnetic film stacks |
US20030181056A1 (en) * | 2002-03-22 | 2003-09-25 | Applied Materials, Inc. | Method of etching a magnetic material film stack using a hard mask |
US6897532B1 (en) * | 2002-04-15 | 2005-05-24 | Cypress Semiconductor Corp. | Magnetic tunneling junction configuration and a method for making the same |
JP2003324187A (ja) * | 2002-05-01 | 2003-11-14 | Sony Corp | 磁気メモリ装置の製造方法および磁気メモリ装置 |
US20040026369A1 (en) * | 2002-08-12 | 2004-02-12 | Chentsau Ying | Method of etching magnetic materials |
US6984585B2 (en) * | 2002-08-12 | 2006-01-10 | Applied Materials Inc | Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layer |
US6964928B2 (en) * | 2002-08-29 | 2005-11-15 | Chentsau Ying | Method for removing residue from a magneto-resistive random access memory (MRAM) film stack using a dual mask |
US6759263B2 (en) | 2002-08-29 | 2004-07-06 | Chentsau Ying | Method of patterning a layer of magnetic material |
US6985384B2 (en) | 2002-10-01 | 2006-01-10 | International Business Machines Corporation | Spacer integration scheme in MRAM technology |
US6743642B2 (en) * | 2002-11-06 | 2004-06-01 | International Business Machines Corporation | Bilayer CMP process to improve surface roughness of magnetic stack in MRAM technology |
US6660568B1 (en) * | 2002-11-07 | 2003-12-09 | International Business Machines Corporation | BiLevel metallization for embedded back end of the line structures |
JP3766380B2 (ja) * | 2002-12-25 | 2006-04-12 | 株式会社東芝 | 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ読み出し方法 |
US6909631B2 (en) * | 2003-10-02 | 2005-06-21 | Freescale Semiconductor, Inc. | MRAM and methods for reading the MRAM |
US6888743B2 (en) * | 2002-12-27 | 2005-05-03 | Freescale Semiconductor, Inc. | MRAM architecture |
KR100535046B1 (ko) * | 2002-12-30 | 2005-12-07 | 주식회사 하이닉스반도체 | 마그네틱 램의 형성방법 |
US7199055B2 (en) * | 2003-03-03 | 2007-04-03 | Cypress Semiconductor Corp. | Magnetic memory cell junction and method for forming a magnetic memory cell junction |
US6911156B2 (en) * | 2003-04-16 | 2005-06-28 | Freescale Semiconductor, Inc. | Methods for fabricating MRAM device structures |
US6784510B1 (en) * | 2003-04-16 | 2004-08-31 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory device structures |
US6798004B1 (en) * | 2003-04-22 | 2004-09-28 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory devices and methods for fabricating the same |
JP4775616B2 (ja) * | 2003-05-29 | 2011-09-21 | 日本電気株式会社 | Mram及びその製造方法 |
US20060138576A1 (en) * | 2003-06-24 | 2006-06-29 | Galdis Michael C | Self-aligned conductive lines for fet-based magnetic random access memory devices and method of forming the same |
US7183130B2 (en) * | 2003-07-29 | 2007-02-27 | International Business Machines Corporation | Magnetic random access memory and method of fabricating thereof |
US6947313B2 (en) * | 2003-08-27 | 2005-09-20 | Hewlett-Packard Development Company, L.P. | Method and apparatus of coupling conductors in magnetic memory |
US7602000B2 (en) * | 2003-11-19 | 2009-10-13 | International Business Machines Corporation | Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element |
US7071009B2 (en) * | 2004-04-01 | 2006-07-04 | Headway Technologies, Inc. | MRAM arrays with reduced bit line resistance and method to make the same |
US7211446B2 (en) * | 2004-06-11 | 2007-05-01 | International Business Machines Corporation | Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory |
US7374952B2 (en) * | 2004-06-17 | 2008-05-20 | Infineon Technologies Ag | Methods of patterning a magnetic stack of a magnetic memory cell and structures thereof |
US7368299B2 (en) * | 2004-07-14 | 2008-05-06 | Infineon Technologies Ag | MTJ patterning using free layer wet etching and lift off techniques |
TWI266413B (en) * | 2004-11-09 | 2006-11-11 | Ind Tech Res Inst | Magnetic random access memory with lower bit line current and manufacture method thereof |
US20060102197A1 (en) * | 2004-11-16 | 2006-05-18 | Kang-Lie Chiang | Post-etch treatment to remove residues |
US7105903B2 (en) | 2004-11-18 | 2006-09-12 | Freescale Semiconductor, Inc. | Methods and structures for electrical communication with an overlying electrode for a semiconductor element |
KR100719345B1 (ko) * | 2005-04-18 | 2007-05-17 | 삼성전자주식회사 | 자기 기억 장치의 형성 방법 |
US7375002B2 (en) * | 2005-06-28 | 2008-05-20 | Freescale Semiconductor, Inc. | MIM capacitor in a semiconductor device and method therefor |
US7257019B2 (en) * | 2005-11-17 | 2007-08-14 | Macronix International Co., Ltd. | Systems and methods for a magnetic memory device that includes a single word line transistor |
US8084835B2 (en) * | 2006-10-20 | 2011-12-27 | Avalanche Technology, Inc. | Non-uniform switching based non-volatile magnetic based memory |
US8508984B2 (en) * | 2006-02-25 | 2013-08-13 | Avalanche Technology, Inc. | Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof |
US8183652B2 (en) | 2007-02-12 | 2012-05-22 | Avalanche Technology, Inc. | Non-volatile magnetic memory with low switching current and high thermal stability |
US7732881B2 (en) * | 2006-11-01 | 2010-06-08 | Avalanche Technology, Inc. | Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM) |
US8535952B2 (en) * | 2006-02-25 | 2013-09-17 | Avalanche Technology, Inc. | Method for manufacturing non-volatile magnetic memory |
US8063459B2 (en) * | 2007-02-12 | 2011-11-22 | Avalanche Technologies, Inc. | Non-volatile magnetic memory element with graded layer |
US20080246104A1 (en) * | 2007-02-12 | 2008-10-09 | Yadav Technology | High Capacity Low Cost Multi-State Magnetic Memory |
US8018011B2 (en) * | 2007-02-12 | 2011-09-13 | Avalanche Technology, Inc. | Low cost multi-state magnetic memory |
US20070253245A1 (en) * | 2006-04-27 | 2007-11-01 | Yadav Technology | High Capacity Low Cost Multi-Stacked Cross-Line Magnetic Memory |
US8363457B2 (en) * | 2006-02-25 | 2013-01-29 | Avalanche Technology, Inc. | Magnetic memory sensing circuit |
US8058696B2 (en) * | 2006-02-25 | 2011-11-15 | Avalanche Technology, Inc. | High capacity low cost multi-state magnetic memory |
US7445943B2 (en) * | 2006-10-19 | 2008-11-04 | Everspin Technologies, Inc. | Magnetic tunnel junction memory and method with etch-stop layer |
US8802451B2 (en) | 2008-02-29 | 2014-08-12 | Avalanche Technology Inc. | Method for manufacturing high density non-volatile magnetic memory |
JP5288933B2 (ja) * | 2008-08-08 | 2013-09-11 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
KR101019893B1 (ko) * | 2008-12-23 | 2011-03-04 | 주식회사 하이닉스반도체 | 플로팅 바디 효과를 이용한 자기저항 메모리셀, 이를 포함하는 메모리 소자 및 그 동작 방법 |
US8208290B2 (en) * | 2009-08-26 | 2012-06-26 | Qualcomm Incorporated | System and method to manufacture magnetic random access memory |
CN102403451B (zh) * | 2010-09-17 | 2014-11-26 | 中芯国际集成电路制造(北京)有限公司 | 一种磁性随机存取存储器磁性隧道结层制造方法 |
WO2012083212A2 (en) * | 2010-12-17 | 2012-06-21 | Everspin Technologies, Inc. | Magnetic random access memory integration having improved scaling |
US8790935B1 (en) * | 2012-10-22 | 2014-07-29 | Everspin Technologies, Inc. | Method of manufacturing a magnetoresistive-based device with via integration |
US20140210021A1 (en) * | 2013-01-25 | 2014-07-31 | Qualcomm Incorporated | Method and apparatus for ameliorating peripheral edge damage in magnetoresistive tunnel junction (mtj) device ferromagnetic layers |
US20160254318A1 (en) * | 2015-02-27 | 2016-09-01 | Qualcomm Incorporated | MAGNETIC RANDOM ACCESS MEMORY (MRAM) BIT CELLS EMPLOYING SOURCE LINES (SLs) AND/OR BIT LINES (BLs) DISPOSED IN MULTIPLE, STACKED METAL LAYERS TO REDUCE MRAM BIT CELL RESISTANCE |
US9842986B2 (en) * | 2015-12-15 | 2017-12-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method of forming the same |
US10290679B1 (en) | 2018-03-09 | 2019-05-14 | Globalfoundries Singapore Pte. Ltd. | High-Density STT-MRAM with 3D arrays of MTJs in multiple levels of interconnects and method for producing the same |
EP3800642A4 (en) | 2018-06-14 | 2021-06-23 | Huawei Technologies Co., Ltd. | MEMORY |
US11361987B2 (en) | 2020-05-14 | 2022-06-14 | International Business Machines Corporation | Forming decoupled interconnects |
US11876047B2 (en) | 2021-09-14 | 2024-01-16 | International Business Machines Corporation | Decoupled interconnect structures |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5861328A (en) | 1996-10-07 | 1999-01-19 | Motorola, Inc. | Method of fabricating GMR devices |
US5804458A (en) * | 1996-12-16 | 1998-09-08 | Motorola, Inc. | Method of fabricating spaced apart submicron magnetic memory cells |
WO2000004555A2 (de) * | 1998-07-15 | 2000-01-27 | Infineon Technologies Ag | Speicherzellenanordnung, bei der ein elektrischer widerstand eines speicherelements eine information darstellt und durch ein magnetfeld beeinflussbar ist, und verfahren zu deren herstellung |
US6097625A (en) * | 1998-07-16 | 2000-08-01 | International Business Machines Corporation | Magnetic random access memory (MRAM) array with magnetic tunnel junction (MTJ) cells and remote diodes |
US5940319A (en) | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
DE10020128A1 (de) * | 2000-04-14 | 2001-10-18 | Infineon Technologies Ag | MRAM-Speicher |
JP2002141481A (ja) * | 2000-11-01 | 2002-05-17 | Canon Inc | 強磁性体メモリおよびその動作方法 |
JP2002170374A (ja) * | 2000-11-28 | 2002-06-14 | Canon Inc | 強磁性体不揮発性記憶素子およびその情報再生方法ならびにそれを用いたメモリチップおよび携帯型情報処理装置 |
-
2000
- 2000-08-28 US US09/649,114 patent/US6365419B1/en not_active Expired - Fee Related
-
2001
- 2001-08-09 JP JP2002524191A patent/JP2004508707A/ja active Pending
- 2001-08-09 EP EP01962015A patent/EP1316106A2/en not_active Withdrawn
- 2001-08-09 KR KR1020037003128A patent/KR100785261B1/ko not_active IP Right Cessation
- 2001-08-09 CN CNB018149324A patent/CN1282239C/zh not_active Expired - Fee Related
- 2001-08-09 WO PCT/US2001/025004 patent/WO2002019386A2/en active Application Filing
- 2001-08-09 AU AU2001283233A patent/AU2001283233A1/en not_active Abandoned
- 2001-08-27 TW TW090121070A patent/TW529163B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW529163B (en) | 2003-04-21 |
CN1505837A (zh) | 2004-06-16 |
KR100785261B1 (ko) | 2007-12-13 |
KR20030064394A (ko) | 2003-07-31 |
EP1316106A2 (en) | 2003-06-04 |
AU2001283233A1 (en) | 2002-03-13 |
JP2004508707A (ja) | 2004-03-18 |
US6365419B1 (en) | 2002-04-02 |
WO2002019386A3 (en) | 2003-01-23 |
WO2002019386A2 (en) | 2002-03-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1282239C (zh) | 紧凑磁阻随机访问存储器单元及其制造方法 | |
CN101034663B (zh) | Mram集成中改进对准的方法和结构 | |
US6927466B2 (en) | Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication | |
US7365431B2 (en) | Semiconductor device having multilayer structure and method for manufacturing thereof | |
KR100523455B1 (ko) | 최소 간격 마그네틱 램 구조를 형성하는 개선된 방법 | |
US6806527B2 (en) | Recessed magnetic storage element and method of formation | |
US20020132464A1 (en) | Self-aligned MRAM contact and method of fabrication | |
US6764865B2 (en) | Semiconductor memory device including magneto resistive element and method of fabricating the same | |
US20080261395A1 (en) | Semiconductor Device, Method for Manufacturing Semiconductor Devices and Mask Systems Used in the Manufacturing of Semiconductor Devices | |
US6952360B2 (en) | Device with layer edges separated through mechanical spacing | |
US7095071B2 (en) | Magnetic random access memory | |
CN1820359A (zh) | 具有凹陷的对准标记的平面磁隧道结衬底 | |
CN102915960A (zh) | 金属互连结构的制作方法 | |
US20090057743A1 (en) | Integrated Circuit Including Structures Arranged at Different Densities and Method of Forming the Same | |
CN1341967A (zh) | 集成电路装置 | |
US7557444B2 (en) | Power-via structure for integration in advanced logic/smart-power technologies | |
US20090142706A1 (en) | Method of manufacturing semiconductor device | |
US6361907B1 (en) | Exposing method in which different kinds of aligning and exposing apparatuses are used | |
US20100052177A1 (en) | Method for manufacturing a crossbar circuit device | |
US11114478B2 (en) | Thin film transistor and manufacture method thereof, array substrate and manufacture method thereof | |
US20110053096A1 (en) | Photomasks, methods of exposing a substrate to light, methods of forming a pattern, and methods of manufacturing a semiconductor device | |
JPH10335606A (ja) | 半導体装置とその製造方法 | |
KR20040008483A (ko) | 마그네틱 램의 제조방법 | |
JP2004111931A (ja) | 相互接続用の導電性ラインパッド | |
KR20030033808A (ko) | 반도체소자의 얼라인개선용 얼라인키 구조 및 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FREEDOM SEMICONDUCTORS CO. Free format text: FORMER OWNER: MOTOROLA, INC. Effective date: 20040813 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20040813 Address after: Texas in the United States Applicant after: FreeScale Semiconductor Address before: Illinois Instrunment Applicant before: Motorola, Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090306 Address after: Arizona USA Patentee after: EVERSPIN TECHNOLOGIES, Inc. Address before: Texas in the United States Patentee before: FreeScale Semiconductor |
|
ASS | Succession or assignment of patent right |
Owner name: EVERSPIN TECHNOLOGIES, INC. Free format text: FORMER OWNER: FREEDOM SEMICONDUCTORS CO. Effective date: 20090306 |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20061025 Termination date: 20110809 |