CN1274176A - 带有绝缘环的沟槽式电容器和相应的制造方法 - Google Patents
带有绝缘环的沟槽式电容器和相应的制造方法 Download PDFInfo
- Publication number
- CN1274176A CN1274176A CN99108474A CN99108474A CN1274176A CN 1274176 A CN1274176 A CN 1274176A CN 99108474 A CN99108474 A CN 99108474A CN 99108474 A CN99108474 A CN 99108474A CN 1274176 A CN1274176 A CN 1274176A
- Authority
- CN
- China
- Prior art keywords
- groove
- layer
- capacitor
- polysilicon
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/097783 | 1998-06-15 | ||
US09/097,783 US6310375B1 (en) | 1998-04-06 | 1998-06-15 | Trench capacitor with isolation collar and corresponding manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1274176A true CN1274176A (zh) | 2000-11-22 |
CN1217413C CN1217413C (zh) | 2005-08-31 |
Family
ID=22265108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN991084748A Expired - Fee Related CN1217413C (zh) | 1998-06-15 | 1999-06-15 | 带有绝缘环的沟槽式电容器和相应的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6310375B1 (zh) |
EP (1) | EP0966043A1 (zh) |
JP (1) | JP2000036578A (zh) |
KR (1) | KR100609545B1 (zh) |
CN (1) | CN1217413C (zh) |
TW (1) | TW448564B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1301552C (zh) * | 2003-07-15 | 2007-02-21 | 南亚科技股份有限公司 | 控制深沟道顶部尺寸的方法 |
CN1674259B (zh) * | 2004-03-26 | 2010-10-06 | 三星电子株式会社 | 带有底切区域中的绝缘层环的沟槽电容器及其制造方法 |
CN102779723A (zh) * | 2011-05-13 | 2012-11-14 | 吴江华诚复合材料科技有限公司 | 一种用于制造沟渠电容器的方法 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19944012B4 (de) | 1999-09-14 | 2007-07-19 | Infineon Technologies Ag | Grabenkondensator mit Kondensatorelektroden und entsprechendes Herstellungsverfahren |
TW452970B (en) * | 1999-10-19 | 2001-09-01 | Mosel Vitelic Inc | Structure and fabrication process of semiconductor trench-type capacitor |
DE19956078B4 (de) * | 1999-11-22 | 2006-12-28 | Infineon Technologies Ag | Verfahren zur Herstellung eines Isolationskragens in einem Grabenkondensators |
US6833079B1 (en) * | 2000-02-17 | 2004-12-21 | Applied Materials Inc. | Method of etching a shaped cavity |
DE10019090A1 (de) * | 2000-04-12 | 2001-10-25 | Infineon Technologies Ag | Grabenkondensator sowie dazugehöriges Herstellungsverfahren |
DE10034003A1 (de) * | 2000-07-07 | 2002-01-24 | Infineon Technologies Ag | Grabenkondensator mit Isolationskragen und entsprechendes Herstellungsverfahren |
US6445194B1 (en) * | 2001-02-16 | 2002-09-03 | International Business Machines Corporation | Structure and method for electrical method of determining film conformality |
DE10113187C1 (de) * | 2001-03-19 | 2002-08-29 | Infineon Technologies Ag | Verfahren zur Herstellung eines Grabenkondensators einer Speicherzelle eines Halbleiterspeichers |
US6566227B2 (en) * | 2001-08-13 | 2003-05-20 | Infineon Technologies Ag | Strap resistance using selective oxidation to cap DT poly before STI etch |
DE10153110B4 (de) * | 2001-10-22 | 2006-11-30 | Infineon Technologies Ag | Speicherzelle |
US6943114B2 (en) * | 2002-02-28 | 2005-09-13 | Infineon Technologies Ag | Integration scheme for metal gap fill, with fixed abrasive CMP |
US6818534B2 (en) * | 2002-08-19 | 2004-11-16 | Infineon Technologies Richmond, Lp | DRAM having improved leakage performance and method for making same |
US6979851B2 (en) * | 2002-10-04 | 2005-12-27 | International Business Machines Corporation | Structure and method of vertical transistor DRAM cell having a low leakage buried strap |
TW584931B (en) * | 2003-04-10 | 2004-04-21 | Nanya Technology Corp | Collar dielectric process for preventing top size of deep trench from enlargement |
US6987042B2 (en) * | 2003-05-30 | 2006-01-17 | International Business Machines Corporation | Method of forming a collar using selective SiGe/Amorphous Si Etch |
US7232718B2 (en) * | 2003-09-17 | 2007-06-19 | Nanya Technology Corp. | Method for forming a deep trench capacitor buried plate |
JP2005175348A (ja) * | 2003-12-15 | 2005-06-30 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
TWI260070B (en) * | 2004-04-23 | 2006-08-11 | Infineon Technologies Ag | A trench and a trench capacitor and method for forming the same |
US7223653B2 (en) * | 2004-06-15 | 2007-05-29 | International Business Machines Corporation | Process for forming a buried plate |
JP2006303063A (ja) * | 2005-04-19 | 2006-11-02 | Elpida Memory Inc | 半導体装置の製造方法 |
US7153738B2 (en) * | 2005-05-19 | 2006-12-26 | International Business Machines Corporation | Method for making a trench memory cell |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
TWI278069B (en) * | 2005-08-23 | 2007-04-01 | Nanya Technology Corp | Method of fabricating a trench capacitor having increased capacitance |
US20070090433A1 (en) * | 2005-10-26 | 2007-04-26 | International Business Machines Corporation | Isolation collar void and methods of forming the same |
US7344954B2 (en) * | 2006-01-03 | 2008-03-18 | United Microelectonics Corp. | Method of manufacturing a capacitor deep trench and of etching a deep trench opening |
US7491604B2 (en) * | 2006-03-07 | 2009-02-17 | International Business Machines Corporation | Trench memory with monolithic conducting material and methods for forming same |
US20080048186A1 (en) * | 2006-03-30 | 2008-02-28 | International Business Machines Corporation | Design Structures Incorporating Semiconductor Device Structures with Self-Aligned Doped Regions |
US7898014B2 (en) * | 2006-03-30 | 2011-03-01 | International Business Machines Corporation | Semiconductor device structures with self-aligned doped regions and methods for forming such semiconductor device structures |
US7494891B2 (en) * | 2006-09-21 | 2009-02-24 | International Business Machines Corporation | Trench capacitor with void-free conductor fill |
US7846791B2 (en) * | 2007-11-08 | 2010-12-07 | International Business Machines Corporation | Structure for a trench capacitor |
US20130043559A1 (en) * | 2011-08-17 | 2013-02-21 | International Business Machines Corporation | Trench formation in substrate |
KR101877878B1 (ko) * | 2012-06-11 | 2018-07-13 | 에스케이하이닉스 주식회사 | 복층의 스토리지노드를 구비한 반도체장치 및 그 제조 방법 |
KR102471277B1 (ko) | 2018-09-19 | 2022-11-28 | 삼성전자주식회사 | 게이트 절연층을 갖는 반도체 소자 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5225698A (en) * | 1989-08-12 | 1993-07-06 | Samsung Electronics Co., Inc. | Semi-conductor device with stacked trench capacitor |
KR920004028B1 (ko) * | 1989-11-20 | 1992-05-22 | 삼성전자 주식회사 | 반도체 장치 및 그 제조방법 |
JP2936659B2 (ja) * | 1990-06-28 | 1999-08-23 | 日本電気株式会社 | ダイナミック型メモリ装置 |
JPH04328861A (ja) * | 1991-04-26 | 1992-11-17 | Texas Instr Japan Ltd | 半導体集積回路装置及びその製造方法 |
JP2819520B2 (ja) | 1991-05-07 | 1998-10-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Dramセル |
US5264716A (en) * | 1992-01-09 | 1993-11-23 | International Business Machines Corporation | Diffused buried plate trench dram cell array |
US5468979A (en) * | 1992-04-30 | 1995-11-21 | Nippon Steel Corporation | Semiconductor device having trench type capacitors formed completely within an insulating layer |
US5528062A (en) * | 1992-06-17 | 1996-06-18 | International Business Machines Corporation | High-density DRAM structure on soi |
US5360758A (en) * | 1993-12-03 | 1994-11-01 | International Business Machines Corporation | Self-aligned buried strap for trench type DRAM cells |
JP3107691B2 (ja) * | 1993-12-03 | 2000-11-13 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
US5936271A (en) | 1994-11-15 | 1999-08-10 | Siemens Aktiengesellschaft | Unit cell layout and transfer gate design for high density DRAMs having a trench capacitor with signal electrode composed of three differently doped polysilicon layers |
KR0151385B1 (ko) * | 1994-11-21 | 1999-03-30 | 문정환 | 반도체 메모리 장치 및 그 제조방법 |
US5576240A (en) * | 1994-12-09 | 1996-11-19 | Lucent Technologies Inc. | Method for making a metal to metal capacitor |
US5658816A (en) | 1995-02-27 | 1997-08-19 | International Business Machines Corporation | Method of making DRAM cell with trench under device for 256 Mb DRAM and beyond |
US5665622A (en) * | 1995-03-15 | 1997-09-09 | International Business Machines Corporation | Folded trench and rie/deposition process for high-value capacitors |
US5545583A (en) * | 1995-04-13 | 1996-08-13 | International Business Machines Corporation | Method of making semiconductor trench capacitor cell having a buried strap |
US5827765A (en) | 1996-02-22 | 1998-10-27 | Siemens Aktiengesellschaft | Buried-strap formation in a dram trench capacitor |
US5656535A (en) | 1996-03-04 | 1997-08-12 | Siemens Aktiengesellschaft | Storage node process for deep trench-based DRAM |
US5793075A (en) * | 1996-07-30 | 1998-08-11 | International Business Machines Corporation | Deep trench cell capacitor with inverting counter electrode |
US5811848A (en) * | 1996-08-16 | 1998-09-22 | United Microelectronics Corporation | Capacitor structure for a semiconductor memory device |
-
1998
- 1998-06-15 US US09/097,783 patent/US6310375B1/en not_active Expired - Lifetime
-
1999
- 1999-05-21 EP EP99109230A patent/EP0966043A1/en not_active Withdrawn
- 1999-06-01 TW TW088109045A patent/TW448564B/zh not_active IP Right Cessation
- 1999-06-15 CN CN991084748A patent/CN1217413C/zh not_active Expired - Fee Related
- 1999-06-15 KR KR1019990022204A patent/KR100609545B1/ko not_active IP Right Cessation
- 1999-06-15 JP JP11168324A patent/JP2000036578A/ja not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1301552C (zh) * | 2003-07-15 | 2007-02-21 | 南亚科技股份有限公司 | 控制深沟道顶部尺寸的方法 |
CN1674259B (zh) * | 2004-03-26 | 2010-10-06 | 三星电子株式会社 | 带有底切区域中的绝缘层环的沟槽电容器及其制造方法 |
CN102779723A (zh) * | 2011-05-13 | 2012-11-14 | 吴江华诚复合材料科技有限公司 | 一种用于制造沟渠电容器的方法 |
Also Published As
Publication number | Publication date |
---|---|
US6310375B1 (en) | 2001-10-30 |
EP0966043A1 (en) | 1999-12-22 |
KR100609545B1 (ko) | 2006-08-04 |
JP2000036578A (ja) | 2000-02-02 |
CN1217413C (zh) | 2005-08-31 |
TW448564B (en) | 2001-08-01 |
KR20000006181A (ko) | 2000-01-25 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG Free format text: FORMER OWNER: SIEMENS AKTIENGESELLSCHAFT Effective date: 20130218 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130218 Address after: German Neubiberg Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: Siemens AG Effective date of registration: 20130218 Address after: Munich, Germany Patentee after: QIMONDA AG Address before: German Neubiberg Patentee before: Infineon Technologies AG |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20151230 Address after: German Berg, Laura Ibiza Patentee after: Infineon Technologies AG Address before: Munich, Germany Patentee before: QIMONDA AG |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050831 Termination date: 20160615 |
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CF01 | Termination of patent right due to non-payment of annual fee |