CN1272221A - 包括钨侵蚀抑制剂的抛光组合物 - Google Patents
包括钨侵蚀抑制剂的抛光组合物 Download PDFInfo
- Publication number
- CN1272221A CN1272221A CN98809580A CN98809580A CN1272221A CN 1272221 A CN1272221 A CN 1272221A CN 98809580 A CN98809580 A CN 98809580A CN 98809580 A CN98809580 A CN 98809580A CN 1272221 A CN1272221 A CN 1272221A
- Authority
- CN
- China
- Prior art keywords
- mechanical polishing
- chemical
- tungsten
- compound
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
Description
浆料 | 添加剂 | 速率 埃/分 |
1 | 无 | 41 |
2 | 2,3,5-三甲基吡嗪 | 35 |
3 | 2-乙基-3,5-二甲基吡嗪 | 33 |
4 | 喹喔啉 | 31 |
5 | 2-乙酰基吡咯 | 36 |
6 | 哒嗪 | 31 |
7 | 组氨酸 | 6 |
8 | 吡唑 | 48 |
9 | 5-硝基引唑 | 37 |
10 | 3,5-二甲基吡唑 | 38 |
11 | 吡嗪 | 31 |
12 | 苯并咪唑 | 36 |
13 | 苯并三唑 | 40 |
14 | 吡啶 | 45 |
15 | 单季盐isies(异硬脂酰基乙基酰亚铵) | 1 |
16 | 氢氧化鲸蜡基三甲基铵 | 3 |
17 | Alkaterge e(2-十七烷基-4-乙基-2-唑啉-4-甲醇) | 9 |
18 | aliquat 336(三辛基甲基氯化铵) | 22 |
19 | nuosept 101(4,4-二甲基唑啉) | 37 |
20 | 四丁基氢氧化铵 | 40 |
21 | 四甲基氢氧化铵 | 40 |
22 | 谷胱甘肽(还原的) | 3 |
23 | 半胱氨酸 | 6 |
24 | 2-巯基-苯并咪唑 | 35 |
25 | 胱氨酸胺 | 5 |
26 | 噻吩 | 40 |
27 | 巯基n-氧吡啶 | 39 |
28 | 盐酸硫胺 | 11 |
29 | 四乙基二硫化四烷基秋兰姆 | 39 |
30 | 2,5-二巯基-1,3-噻二唑(thiadiazole) | 47 |
样品 | 配方 | 侵蚀速率(埃/分) |
31 | 无 | 45 |
32 | 0.05%苯基丙氨酸 | 29 |
33 | 0.05%赖氨酸 | 8 |
34 | 0.05%酪氨酸 | 26 |
35 | 0.05%谷酰胺 | 11 |
36 | 0.05%谷胺酸 | 16 |
37 | 0.05%甘氨酸 | 14 |
38 | 0.015%胱氨酸 | 8 |
样品 | 配方 | 侵蚀速率(埃/分) |
39 | 无 | 46 |
40 | 0.04%半胱氨酸 | 7 |
41 | 0.05%胱氨酸 | 5 |
42 | 0.05%丝氨酸 | 21 |
43 | 0.05%3,3-二硫代丙酸 | 40 |
44 | 0.06%2,5-二苯基-1,6,6a-三噻戊烷 | 36 |
浆料 | 添加剂 | pH | W速率埃/分 |
45 | 无 | 2.3 | 29 |
46 | 0.02%草酸 | 2.3 | 98 |
47 | 0.02%草酸+0.05%甘氨酸 | 2.3 | 45 |
48 | 0.05%十二烷基胺 | 2.3 | 0 |
49 | 0.03%Silquest A-1106 | 2.3 | 1 |
50 | 无 | 5.0 | 64 |
51 | 0.05%甘氨酸 | 5.0 | 47 |
52 | 无 | 7.0 | 124 |
53 | 0.05%甘氨酸 | 7.0 | 101 |
54 | 0.03%Silquest A-1106 | 7.0 | 85 |
Claims (66)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/901,803 | 1997-07-28 | ||
US08/901,803 US6083419A (en) | 1997-07-28 | 1997-07-28 | Polishing composition including an inhibitor of tungsten etching |
US09/086,659 US6136711A (en) | 1997-07-28 | 1998-05-29 | Polishing composition including an inhibitor of tungsten etching |
US09/086,659 | 1998-05-29 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100773607A Division CN1966594B (zh) | 1997-07-28 | 1998-07-27 | 包括钨侵蚀抑制剂的抛光组合物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1272221A true CN1272221A (zh) | 2000-11-01 |
CN1326199C CN1326199C (zh) | 2007-07-11 |
Family
ID=25414835
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100773607A Expired - Lifetime CN1966594B (zh) | 1997-07-28 | 1998-07-27 | 包括钨侵蚀抑制剂的抛光组合物 |
CNB988095807A Expired - Lifetime CN1326199C (zh) | 1997-07-28 | 1998-07-27 | 包括钨侵蚀抑制剂的抛光组合物 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100773607A Expired - Lifetime CN1966594B (zh) | 1997-07-28 | 1998-07-27 | 包括钨侵蚀抑制剂的抛光组合物 |
Country Status (12)
Country | Link |
---|---|
US (2) | US6083419A (zh) |
EP (1) | EP0896042B1 (zh) |
JP (2) | JP4917195B2 (zh) |
KR (1) | KR100606315B1 (zh) |
CN (2) | CN1966594B (zh) |
AT (1) | ATE288948T1 (zh) |
AU (1) | AU8595498A (zh) |
DE (1) | DE69828925T2 (zh) |
IL (1) | IL134213A (zh) |
MY (1) | MY116265A (zh) |
TW (1) | TW580514B (zh) |
WO (1) | WO1999005706A1 (zh) |
Cited By (23)
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CN1307275C (zh) * | 2002-01-24 | 2007-03-28 | Cmp罗姆和哈斯电子材料控股公司 | 钨抛光溶液 |
CN100366694C (zh) * | 2002-10-31 | 2008-02-06 | Jsr株式会社 | 化学机械抛光用水分散体及其用途和所用的水分散体材料 |
CN100516157C (zh) * | 2002-04-22 | 2009-07-22 | Jsr株式会社 | 化学机械研磨用的水分散体 |
CN101437912B (zh) * | 2006-03-20 | 2012-12-26 | 卡伯特微电子公司 | 氧化稳定的化学机械抛光组合物及方法 |
CN103228756A (zh) * | 2011-08-16 | 2013-07-31 | 优备精密电子有限公司 | 一种钨研磨用cmp浆料组合物 |
CN104066807A (zh) * | 2012-04-13 | 2014-09-24 | 优备材料有限公司 | 研磨浆料及使用其的研磨方法 |
CN104513627A (zh) * | 2014-12-22 | 2015-04-15 | 深圳市力合材料有限公司 | 一种集成电路铜cmp组合物及其制备方法 |
CN106103638A (zh) * | 2014-03-11 | 2016-11-09 | 嘉柏微电子材料股份公司 | 用于钨化学机械抛光的组合物 |
TWI558803B (zh) * | 2014-03-12 | 2016-11-21 | 卡博特微電子公司 | 用於鎢材料之cmp的組合物及方法 |
CN108372431A (zh) * | 2017-01-31 | 2018-08-07 | 罗门哈斯电子材料Cmp控股股份有限公司 | 针对钨的化学机械抛光方法 |
CN108372459A (zh) * | 2017-01-31 | 2018-08-07 | 罗门哈斯电子材料Cmp控股股份有限公司 | 钨的化学机械抛光方法 |
CN108660510A (zh) * | 2018-05-10 | 2018-10-16 | 天津赤霄科技有限公司 | 一种新型单晶硅片制绒添加剂的制造及简单制绒方法 |
CN109563375A (zh) * | 2016-08-05 | 2019-04-02 | 凯斯科技股份有限公司 | 钨阻挡层抛光料浆组合物 |
CN110616044A (zh) * | 2018-06-18 | 2019-12-27 | 弗萨姆材料美国有限责任公司 | 钨化学机械抛光组合物 |
CN110734703A (zh) * | 2018-07-20 | 2020-01-31 | 弗萨姆材料美国有限责任公司 | 用于减少的氧化物侵蚀的钨化学机械抛光 |
CN111378375A (zh) * | 2018-12-28 | 2020-07-07 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
CN111655809A (zh) * | 2017-11-20 | 2020-09-11 | 嘉柏微电子材料股份公司 | 展现出减少的表面刮痕的用于抛光存储器硬盘的组合物及方法 |
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- 1998-07-27 WO PCT/US1998/015572 patent/WO1999005706A1/en active Application Filing
- 1998-07-27 IL IL13421398A patent/IL134213A/xx not_active IP Right Cessation
- 1998-07-27 AU AU85954/98A patent/AU8595498A/en not_active Abandoned
- 1998-07-27 CN CN2006100773607A patent/CN1966594B/zh not_active Expired - Lifetime
- 1998-07-27 CN CNB988095807A patent/CN1326199C/zh not_active Expired - Lifetime
- 1998-07-28 MY MYPI98003441A patent/MY116265A/en unknown
- 1998-07-28 AT AT98305999T patent/ATE288948T1/de active
- 1998-07-28 TW TW087112310A patent/TW580514B/zh not_active IP Right Cessation
- 1998-07-28 DE DE69828925T patent/DE69828925T2/de not_active Expired - Lifetime
- 1998-07-28 JP JP21251498A patent/JP4917195B2/ja not_active Expired - Lifetime
- 1998-07-28 KR KR1019980030356A patent/KR100606315B1/ko active IP Right Review Request
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Also Published As
Publication number | Publication date |
---|---|
JP2012074734A (ja) | 2012-04-12 |
EP0896042A1 (en) | 1999-02-10 |
JP4917195B2 (ja) | 2012-04-18 |
CN1966594B (zh) | 2013-01-16 |
DE69828925D1 (de) | 2005-03-17 |
ATE288948T1 (de) | 2005-02-15 |
IL134213A (en) | 2005-12-18 |
IL134213A0 (en) | 2001-04-30 |
WO1999005706A1 (en) | 1999-02-04 |
CN1966594A (zh) | 2007-05-23 |
KR19990014245A (ko) | 1999-02-25 |
EP0896042B1 (en) | 2005-02-09 |
MY116265A (en) | 2003-12-31 |
JP5571649B2 (ja) | 2014-08-13 |
TW580514B (en) | 2004-03-21 |
AU8595498A (en) | 1999-02-16 |
CN1326199C (zh) | 2007-07-11 |
JPH11116948A (ja) | 1999-04-27 |
DE69828925T2 (de) | 2005-07-28 |
US6136711A (en) | 2000-10-24 |
KR100606315B1 (ko) | 2006-09-22 |
US6083419A (en) | 2000-07-04 |
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