CN1252541C - 含有环烯烃聚合物及疏水非甾族多脂环添加剂的光刻胶组合物 - Google Patents
含有环烯烃聚合物及疏水非甾族多脂环添加剂的光刻胶组合物 Download PDFInfo
- Publication number
- CN1252541C CN1252541C CNB001038508A CN00103850A CN1252541C CN 1252541 C CN1252541 C CN 1252541C CN B001038508 A CNB001038508 A CN B001038508A CN 00103850 A CN00103850 A CN 00103850A CN 1252541 C CN1252541 C CN 1252541C
- Authority
- CN
- China
- Prior art keywords
- acid
- cyclic olefin
- group
- olefin polymer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/266341 | 1999-03-11 | ||
US09/266,341 US6124074A (en) | 1999-03-11 | 1999-03-11 | Photoresist compositions with cyclic olefin polymers and hydrophobic non-steroidal multi-alicyclic additives |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1269530A CN1269530A (zh) | 2000-10-11 |
CN1252541C true CN1252541C (zh) | 2006-04-19 |
Family
ID=23014170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001038508A Expired - Lifetime CN1252541C (zh) | 1999-03-11 | 2000-03-03 | 含有环烯烃聚合物及疏水非甾族多脂环添加剂的光刻胶组合物 |
Country Status (3)
Country | Link |
---|---|
US (2) | US6124074A (zh) |
CN (1) | CN1252541C (zh) |
MY (1) | MY122727A (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6808859B1 (en) * | 1996-12-31 | 2004-10-26 | Hyundai Electronics Industries Co., Ltd. | ArF photoresist copolymers |
US6265131B1 (en) * | 2000-04-03 | 2001-07-24 | Everlight Usa. Inc. | Alicyclic dissolution inhibitors and positive potoresist composition containing the same |
TW574622B (en) * | 2000-05-05 | 2004-02-01 | Ibm | Copolymer photoresist with improved etch resistance |
US6251560B1 (en) * | 2000-05-05 | 2001-06-26 | International Business Machines Corporation | Photoresist compositions with cyclic olefin polymers having lactone moiety |
JP3458096B2 (ja) | 2000-08-11 | 2003-10-20 | 株式会社半導体先端テクノロジーズ | レジスト組成物、及び半導体装置の製造方法 |
US6794109B2 (en) | 2001-02-23 | 2004-09-21 | Massachusetts Institute Of Technology | Low abosorbing resists for 157 nm lithography |
US20030078354A1 (en) * | 2001-02-23 | 2003-04-24 | Arch Specialty Chemicals, Inc. | Novel beta-oxo compounds and their use in photoresist |
US6534239B2 (en) | 2001-04-27 | 2003-03-18 | International Business Machines Corporation | Resist compositions with polymers having pendant groups containing plural acid labile moieties |
US6936398B2 (en) * | 2001-05-09 | 2005-08-30 | Massachusetts Institute Of Technology | Resist with reduced line edge roughness |
JP2005518476A (ja) * | 2002-02-21 | 2005-06-23 | ハネウェル・インターナショナル・インコーポレーテッド | フッ素化された分子並びに、その製造及び使用法 |
JP2006511628A (ja) * | 2002-05-07 | 2006-04-06 | ハネウェル・インターナショナル・インコーポレーテッド | フッ素化ポリマー |
US20040091813A1 (en) * | 2002-11-05 | 2004-05-13 | Honeywell International Inc. | Fluorinated polymers |
TWI344578B (en) * | 2003-02-20 | 2011-07-01 | Promerus Llc | Dissolution rate modifiers for photoresist compositions |
AU2003292761A1 (en) * | 2003-04-04 | 2004-11-01 | Soken Chemical And Engineering Co., Ltd. | Modified cycloolefin copolymer, process for producing the same, and use of the polymer |
JP4383810B2 (ja) * | 2003-09-10 | 2009-12-16 | 信越化学工業株式会社 | 含フッ素重合性環状オレフィン化合物 |
US7488565B2 (en) * | 2003-10-01 | 2009-02-10 | Chevron U.S.A. Inc. | Photoresist compositions comprising diamondoid derivatives |
US20060008730A1 (en) * | 2004-07-09 | 2006-01-12 | Puy Michael V D | Monomers for photoresists bearing acid-labile groups of reduced optical density |
US20060008731A1 (en) * | 2004-07-09 | 2006-01-12 | Michael Van Der Puy | Novel photoresist monomers and polymers |
US11127592B2 (en) * | 2018-05-31 | 2021-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photosensitive groups in resist layer |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4400461A (en) * | 1981-05-22 | 1983-08-23 | Bell Telephone Laboratories, Incorporated | Process of making semiconductor devices using photosensitive bodies |
US4855017A (en) * | 1985-05-03 | 1989-08-08 | Texas Instruments Incorporated | Trench etch process for a single-wafer RIE dry etch reactor |
US5310619A (en) * | 1986-06-13 | 1994-05-10 | Microsi, Inc. | Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable |
JP3000745B2 (ja) * | 1991-09-19 | 2000-01-17 | 富士通株式会社 | レジスト組成物とレジストパターンの形成方法 |
US5250829A (en) * | 1992-01-09 | 1993-10-05 | International Business Machines Corporation | Double well substrate plate trench DRAM cell array |
DE4319178C2 (de) * | 1992-06-10 | 1997-07-17 | Fujitsu Ltd | Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator |
JP3271359B2 (ja) * | 1993-02-25 | 2002-04-02 | ソニー株式会社 | ドライエッチング方法 |
JP3687988B2 (ja) * | 1993-09-03 | 2005-08-24 | 日立化成工業株式会社 | i線ステッパ用感光性樹脂組成物 |
US5468819A (en) * | 1993-11-16 | 1995-11-21 | The B.F. Goodrich Company | Process for making polymers containing a norbornene repeating unit by addition polymerization using an organo (nickel or palladium) complex |
JP2715881B2 (ja) * | 1993-12-28 | 1998-02-18 | 日本電気株式会社 | 感光性樹脂組成物およびパターン形成方法 |
CN1051320C (zh) * | 1994-02-01 | 2000-04-12 | 旭化成工业株式会社 | 含改性环状单体单元的聚合物 |
US5562801A (en) * | 1994-04-28 | 1996-10-08 | Cypress Semiconductor Corporation | Method of etching an oxide layer |
US5580694A (en) * | 1994-06-27 | 1996-12-03 | International Business Machines Corporation | Photoresist composition with androstane and process for its use |
US5607824A (en) * | 1994-07-27 | 1997-03-04 | International Business Machines Corporation | Antireflective coating for microlithography |
EP0737897A1 (de) * | 1995-03-15 | 1996-10-16 | OCG Microelectronic Materials Inc. | Nasschemisch entwickelbares, ätzstabiler Photoresist für UV-Strahlung mit einer Wellenlänge unter 200 nm |
US5705503A (en) * | 1995-05-25 | 1998-01-06 | Goodall; Brian Leslie | Addition polymers of polycycloolefins containing functional substituents |
JP3433017B2 (ja) * | 1995-08-31 | 2003-08-04 | 株式会社東芝 | 感光性組成物 |
KR0178475B1 (ko) * | 1995-09-14 | 1999-03-20 | 윤덕용 | 신규한 n-비닐락탐 유도체 및 그의 중합체 |
US5863699A (en) * | 1995-10-12 | 1999-01-26 | Kabushiki Kaisha Toshiba | Photo-sensitive composition |
JP2907144B2 (ja) * | 1995-12-11 | 1999-06-21 | 日本電気株式会社 | 酸誘導体化合物、高分子化合物、それを用いた感光性樹脂組成物およびパターン形成方法 |
US6136499A (en) * | 1996-03-07 | 2000-10-24 | The B. F. Goodrich Company | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
US5843624A (en) * | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US5879857A (en) * | 1997-02-21 | 1999-03-09 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US5744376A (en) * | 1996-04-08 | 1998-04-28 | Chartered Semiconductor Manufacturing Pte, Ltd | Method of manufacturing copper interconnect with top barrier layer |
US5618751A (en) * | 1996-05-23 | 1997-04-08 | International Business Machines Corporation | Method of making single-step trenches using resist fill and recess |
US5821469A (en) * | 1996-12-18 | 1998-10-13 | Lucent Technologies Inc. | Device for securing cables in a telecommunications system |
JP2991149B2 (ja) * | 1997-02-25 | 1999-12-20 | 日本電気株式会社 | 感光性樹脂組成物およびパターン形成方法 |
US5801094A (en) * | 1997-02-28 | 1998-09-01 | United Microelectronics Corporation | Dual damascene process |
JP3665445B2 (ja) * | 1997-04-28 | 2005-06-29 | 株式会社東芝 | 感光性組成物およびこれを用いたパタン形成方法 |
-
1999
- 1999-03-11 US US09/266,341 patent/US6124074A/en not_active Expired - Lifetime
-
2000
- 2000-02-15 MY MYPI20000522A patent/MY122727A/en unknown
- 2000-03-03 CN CNB001038508A patent/CN1252541C/zh not_active Expired - Lifetime
- 2000-07-26 US US09/625,649 patent/US6562554B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1269530A (zh) | 2000-10-11 |
US6562554B1 (en) | 2003-05-13 |
US6124074A (en) | 2000-09-26 |
MY122727A (en) | 2006-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1252541C (zh) | 含有环烯烃聚合物及疏水非甾族多脂环添加剂的光刻胶组合物 | |
KR101841452B1 (ko) | 락톤 광산발생제, 수지 및 이들을 포함하는 포토레지스트 | |
KR101591546B1 (ko) | 술포늄염을 포함하는 고분자 화합물, 레지스트 재료 및 패턴 형성 방법, 및 술포늄염 단량체 및 그 제조 방법 | |
KR101708521B1 (ko) | 패턴 형성 방법 및 이것에 이용하는 레지스트 조성물 | |
KR101708523B1 (ko) | 패턴 형성 방법 및 레지스트 조성물 | |
KR100257456B1 (ko) | 레지스트패턴 형성방법 | |
KR20180127924A (ko) | 레지스트 재료 및 패턴 형성 방법 | |
KR102078898B1 (ko) | 단량체, 고분자 화합물, 레지스트 재료 및 패턴 형성 방법 | |
JP5815575B2 (ja) | パターン形成方法 | |
JP2017008068A (ja) | 塩基反応性光酸発生剤およびこれを含むフォトレジスト | |
KR20100137393A (ko) | 광산 발생제 및 이를 포함하는 포토레지스트 | |
KR20110004799A (ko) | 술포늄염, 레지스트 재료 및 패턴 형성 방법 | |
CN1443315A (zh) | 用于深紫外线的光刻胶组合物及其方法 | |
CN104007623A (zh) | 正色调有机溶剂显像的化学增强抗蚀剂 | |
CN102212100A (zh) | 胆酸酯光酸发生剂和包含该发生剂的光致抗蚀剂 | |
KR20140020779A (ko) | 단량체, 고분자 화합물, 레지스트 조성물 및 패턴 형성 방법 | |
KR20180077073A (ko) | 화학 증폭 네가티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 | |
TW201831997A (zh) | 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、電子器件的製造方法 | |
KR102105247B1 (ko) | 레지스트 재료 및 패턴 형성 방법 | |
KR20170045136A (ko) | 레지스트 조성물 및 레지스트 패턴 형성 방법 | |
CN1685285A (zh) | 193nm抗蚀剂 | |
TW201237550A (en) | Compositions comprising base-reactive component and processes for photolithography | |
CN1272668C (zh) | 含有含多个酸不稳定部分的侧基团的聚合物的光刻胶组合物 | |
KR20130102485A (ko) | 산발생제, 화학 증폭형 레지스트 재료 및 패턴 형성 방법 | |
JP4406248B2 (ja) | フルオレンジカルボン酸エステルおよび感光性樹脂組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: GR Ref document number: 1050491 Country of ref document: HK |
|
TR01 | Transfer of patent right |
Effective date of registration: 20171030 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171030 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
|
TR01 | Transfer of patent right | ||
CX01 | Expiry of patent term |
Granted publication date: 20060419 |
|
CX01 | Expiry of patent term |