CN1240465A - 倒装片器件用热可再加工粘合剂 - Google Patents
倒装片器件用热可再加工粘合剂 Download PDFInfo
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- CN1240465A CN1240465A CN97180682A CN97180682A CN1240465A CN 1240465 A CN1240465 A CN 1240465A CN 97180682 A CN97180682 A CN 97180682A CN 97180682 A CN97180682 A CN 97180682A CN 1240465 A CN1240465 A CN 1240465A
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Abstract
由多个焊锡连接物将半导体器件连接到支撑衬底上,所述焊锡连接物从支撑衬底延伸到所述半导体器件,在所述支撑衬底和所述半导体器件之间形成的空隙用热可再加工倒装片粘合剂填充,所述粘合剂包含:(a)由具有大于一个官能度的至少一种亲二烯体与至少一种含有2,5-二烷基取代的呋喃聚合物反应制得的热可再加工交联树脂,和(b)以组分(a)和(b)的总量计,含量为25—75%(重量)的至少一种填料。该方法得到容易可再加工的半导体组件。
Description
发明领域
本发明涉及热固性粘合剂。一方面,本发明涉及适合于灌封倒装片和衬底间空隙的热固性粘合剂。
发明背景
受控塌陷芯片连接(C4)或倒装片技术在1960s作为通过焊锡隆起物将钝化的半导体器件与诸如陶瓷载体的衬底连接的方法已得到介绍(“微电子封装手册”,R.Tummala和E.J.Rymaszewski,Van NostrandReinhold,N.Y.1989)。器件上高度熔融的焊锡隆起物与衬底上相应焊点连接,衬底上的焊锡流动并在器件和衬底间形成导电带。后来,发现粘合剂(倒装片灌封剂)通常是填充的热固性粘合剂的存在除了保护器件以免潮湿和抵御周围环境外,还大大提高了器件的疲劳寿命。
倒装片技术由于许多原因而迅速得到普遍的接受,这些原因包括在面积和体积上的高密度、小足迹、高产率和避免了诸如树脂转移制模的现有封装技术具有的费时而昂贵的加工步骤,以灌封芯片。许多诸如陶瓷(如氧化铝)和有机物(如环氧/玻璃纤维叠片)的衬底或芯片载体被用于该技术。随着诸如多芯片模件的封装模式的出现,在昂贵的多元件板中模件与模件间的间隙和倒装片间的位置更近,失效倒装片的维修和再加工迅速变得日益令人关注。通常的倒装片方法(Y.Tsukada,Y.Mashimoto,N.Watanuki,第43届电子元件与技术会议论文集,1993,IEEE,p199-204)涉及在载体上形成焊锡凸起、施加焊锡膏、将凸起的倒装片与诸如SMT(表面安装技术)芯片、电阻等其它元件放置在一起(如果载体是多元件板)、红外软熔、X光探伤、上电测试、倒装片灌封、后烘烤和最终检查。如果在上电测试步骤发现倒装片失效,就通过加热将芯片移开,重新施加焊锡凸起,放置置换的芯片并返回以上过程。如果在最终检查后发现芯片失效,在加热同时剪切以切断交联的环氧并移开芯片。由于存在交联材料,使得随后还要进行烦琐的重新定位步骤、芯片置换、红外软熔和上述过程中的其它连续步骤。
通常的倒装片粘合剂是分散到芯片下面后发生不可逆交联的热固性体系。一种配方的实例(D.W.Wang和K.I.Papathomas,关于元件、节点及制造技术的IEEE学报,16(8),1993.12,p863-867)是诸如双酚A环氧或环脂族环氧的液态环氧树脂、具有合适促进剂的诸如酸酐的固化剂、诸如二氧化硅的填料和其它添加剂。
半导体器件的再加工是昂贵和费时的过程。通常,如果器件需要更换,就必须用上述的破坏性方法将器件移开。这样,就要求提供一种倒装片组件和方法,使这种再加工更容易和不具破坏性。
发明概述
根据本发明,提供了一种热可再加工灌封倒装片组件,包括:
支撑衬底;
至少一种通过多个焊锡连接物的方式连接到所述支撑衬底上的半导体器件,所述焊锡连接物从支撑衬底延伸到半导体器件,在所述支撑衬底和所述半导体器件之间形成间隙;和填充所述间隙的热可再加工粘合剂,所述热可再加工粘合剂包括:
(a)由具有大于一个官能度的至少一种亲二烯体与至少一种含有2,5-二烷基取代的呋喃的聚合物反应制得的热可再加工交联树脂,和
(b)含量为基于组分(a)和(b)总量25-75%(重量)的至少一种填料,从而得到组件。
本发明的详细描述
可有多种方法产生热可再加工交联树脂的聚合物链。热可再加工交联树脂可通过具有大于一个官能度的至少一种亲二烯体与至少一种含有2,5-二烷基取代的呋喃的聚合物通过Diels-Alder加成反应相互连接制得。在一个实施方案中,2,5-二烷基取代的呋喃基团可连接在聚合物链上或形成聚合物链的一部分。
形成Diels-Alder加成物的呋喃与亲二烯体可逆反应可表示为:2,5-二烷基 亲二烯体 DIELS-ALDER取代的呋喃 加成物
其中Y是C<或N-。
对于热可再加工交联树脂,所有或部分Diels-Alder加成物通过加热可转化为呋喃和亲二烯体,使树脂成为液态(可流动材料)。
在其分子结构中含有两个或更多亲二烯体的交联剂也可用于该实施方案。这些亲二烯体通过化学键或桥基互相连接。因此,本发明也考虑这样的倒装片粘合剂组合物(灌封剂),它们包括带2,5-二烷基取代的呋喃片断的聚合物,和分子结构中含有两个或更多亲二烯体的交联剂。亲二烯体也可连接在聚合物链上或形成聚合物链的一部分。也可使用在其分子结构中含有两个或更多个2,5-二烷基取代的呋喃基团的交联剂。
在另一个实施方案中,亲二烯体可连接在聚合物链上,所述聚合物也与2,5-二烷基取代的呋喃基团连接,或作为聚合物链的一部分包含2,5-二烷基取代的呋喃基团。因此,含有2,5-二烷基取代的呋喃的聚合物也可包含2,5-二烷基取代的呋喃片断和亲二烯体片断。
2,5-二烷基取代的呋喃可以或不可以在其3-和4-位置被取代。优选的取代基是诸如例如烷基或烷氧基团的惰性取代基,通常具有10个以下的碳原子,如甲基、乙基、1-丙基、甲氧基和1-己氧基基团。含有2和5位置未被取代的呋喃的树脂易产生可导致不可逆胶凝的副反应,并影响其可逆性。
2,5-二烷基取代的呋喃基团可与交联树脂聚合物的聚合物链连接。所述基团可直接通过化学键或通过二价有机桥基连接,呋喃或呋喃的3-或4-位置的任何取代基可起到连接点作用。在呋喃的2-和5-位置的烷基取代基可以相同或不同,并将通常具有10个以下碳原子。合适的烷基基团的实例是甲基、乙基、2-丙基和1-己基。合适的可与聚合物链连接的呋喃基团的实例是2,5-二甲基呋喃-3-基、2,5-二乙基-3-甲基呋喃-4-基、5-乙基糠基或5-(1-丁基)糠基。
可与2,5-二烷基取代的呋喃基团连接的聚合物链的类型并不重要。合适的聚合物链是聚烯烃,如聚乙烯、聚丙烯、聚苯乙烯、聚丙烯酸或乙烯和丙烯酸或丙烯酸酯的共聚物,一氧化碳与烯属不饱和化合物的无规或交替共聚物(关于这些共聚物的进一步描述参照下文),或含有杂原子的链,如聚酰胺或聚酯。优选2,5-二烷基取代的呋喃形成聚合物骨架本身的结构单元。在这种情况下,尤其优选呋喃的每个2,5-二烷基取代基是亚烷基,该亚烷基同样形成聚合物链部分并可以或不可以被取代。
这种结构可通过呋喃化一氧化碳与烯属不饱和化合物的共聚物制得,所述共聚物在其聚合物链中含有1,4-二羰基结构,即通过将这些1,4-二羰基结构转化为呋喃片断。另外,含有2,5-二烷基取代的呋喃的聚合物可通过将一氧化碳与烯属不饱和化合物在强酸存在下反应直接制得。
在其聚合物链中含有1,4-二羰基结构的一氧化碳与烯属不饱和化合物的优选交替共聚物已经公知。它们可用由例如EP-A-121965、EP-A-181014和EP-A-516238的方法通过钯催化聚合反应制备。这样制备的聚合物是一氧化碳与烯属不饱和化合物的交替共聚物,该共聚物的聚合物链以交替排列方式含有源于一氧化碳的单体单元(即羰基)和源于烯属不饱和化合物的单体单元,使得聚合物链的每第四个碳原子属于羰基。含有1,4-二羰基结构的一氧化碳与烯属不饱和化合物的交替共聚物可以是无规共聚物,即该共聚物的聚合物链含有无规顺序的单体单元。后者的共聚物可使用例如US-A-2495286和US-A-4024326公开的方法通过自由基引发的聚合反应制备。
一氧化碳与烯属不饱和化合物的共聚物的呋喃化可通过本领域公知的方法进行,例如由A.Sen等(聚合物科学杂志,A部分,聚合物化学,32(1994),p841)公开的使用五氧化二磷作为脱水剂,或者如US-A-3979373中公开的在例如对甲苯磺酸的强酸存在下加热。这些方法使聚合物链中1,4-二羰芯片断根据所选择的反应条件以不同的转化率转化为呋喃片断。
优选地采用一氧化碳与烯属不饱和化合物的交替共聚物进行呋喃化,因为这些共聚物在聚合物骨架中1,4-二羰基的含量较高,从而可结合较多量的呋喃基团而有效地完成呋喃化。然而,如果要求的呋喃化程度低,可使羰基转化为呋喃基团的转化率低。
一氧化碳与烯属不饱和化合物的共聚物可基于烃作为烯属不饱和化合物。优选的共聚物基于烯属不饱和烃,合适的是α-烯烃,尤其是具有10个以下碳原子的α-烯烃。非常合适的是脂族α-烯烃,尤其是具有3到6个碳原子的脂族α-烯烃,更尤其是直链的脂族α-烯烃,如丙烯、1-丁烯、1-戊烯和1-己烯。最优选丙烯。共聚物可以是部分有规的或无规的、有规立构的或无规立构的。
得到Diels-Alder加成物的亲二烯体的精确性能并不重要,只要Diels-Alder加成物具有使交联树脂具有可再加工性这样的热稳定性。通常可再加工交联树脂可以再加工的最低温度取决于所用半导体器件要求的最高温度。再加工适合于在100℃,优选130℃,到250℃,优选到200℃的温度下进行。
合适的亲二烯体官能团可用Y=Y表示,其中Y是C<或N-,或-C≡C-。优选的亲二烯体是例如具有连接在乙炔片断两侧的吸电子基团,如酯基和酮基。实例是丁炔二醇酸(即乙炔二羧酸)的单酯和二酯,以及取代的丁-2-炔-1,4-二酮。其它合适的亲二烯体是含有包括在5-或6-元环中的丁-2-烯-1,4-二酮的化合物,尤其是具有以下通式的化合物:
其中X指O,S,N、P或R,其中R是亚烷基,其中至少一个自由价由桥基占据,所述桥基将亲二烯体与其中一个聚合物链或与另一个亲二烯体连接,其中剩余的价(如果有的话)由低级烷基或酰基取代基,或优选的由氢占据。合适的低级烷基取代基适合含有4个以下碳原子,并且是例如甲基或乙基。该通式的亲二烯体优选的是马来酸酐尤其是马来酰亚胺的环状衍生物(即X表示O或尤其是N-)。
其它合适的亲二烯体的实例包括双(三唑啉二酮)、双(2,3-二氮杂萘二酮)、醌、双(三聚氰基乙烯)、双(偶氮二羧酸酯);二丙烯酸酯、马来酸或富马酸聚酯、乙炔二羧酸酯聚酯。
如上文指出的,在一个实施方案中使用了在其分子结构中包含两个或更多个亲二烯体的交联剂,从所述亲二烯体中可得到Diels-Alder加成物。亲二烯体可通过一个或多个桥基互相连接。例如,三个亲二烯体可通过三价桥基互相连接。然而,使用通过二价桥基使两个亲二烯体互相连接的交联剂就足够了。亲二烯体也可通过化学键互相连接。
交联剂桥基的分子量和化学性能都可以在较大范围内不同。已经发现交联剂的这些差别导致覆盖了大范围的机械特性的可再塑性交联树脂。桥基可以在桥键上仅仅含有碳原子,但也可能在桥键上含有杂原子,如氧、硅或氮原子。桥基可以是柔性或刚性的。
例如,具有柔性聚合物链的聚合物桥基,如聚(烯化氧)或聚硅氧烷,具有大于300的数均分子量,得到似橡胶的可再加工交联树脂。当聚合物柔性链具有1500-5000或更大量级的数均分子量时,可得到代替热塑性橡胶的可再加工交联树脂。
同样,这种合适的交联剂是二马来酰亚氨基封端的聚烯化氧,如聚环氧乙烷或聚环氧丙烷,和二马来酰亚氨基封端的聚硅氧烷,如通式为H2N-CH2-[O-SiR2]n-O-CH2-NH2的聚硅氧烷二马来酰亚胺,其中n是平均大于10、尤其在20-70范围内的整数,每个R独立地是烷基,尤其是低于5个碳原子的烷基,优选是甲基。使用二氨基封端的聚环氧丙烷的二马来酰亚胺,尤其是数均分子量至少为300、更尤其在1500-5000范围内时可得到非常好的结果。
还使用低分子量桥基,即通常低于20个碳原子的桥基。环脂族和芳族桥基使桥基具有刚性。低分子量环脂族和芳族桥基往往得到可再塑性交联树脂,该树脂硬且脆,并具有较高的玻璃化转变温度。环脂族和芳族低分子量桥基的实例是桥中含有降冰片烷骨架的基团、1,3-亚苯基和下列通式的基团:-f-CH2-f、-f-O-f-O-f-、-f-O-f-SO2-f-O-f-和-f-C(CH3)2-f-,其中-f-指1,4-亚苯基。其它合适的桥基是亚烷基和氧化羰基(酯)和它们的结合。合适的低分子量交联剂是例如肼的二马来酰亚胺、2,4-二氨基甲苯、六亚甲基二胺、十二亚甲基二胺、具有如下通式的二胺:和低分子量的二氨基封端的(聚)硅氧烷,如通式为:H2N-CH2-[O-SiR2]n-O-CH2-NH2的聚硅氧烷,其中n的范围平均为1-10,优选1-5,基团R优选为甲基。上述通式的二元胺的异构体混合物可从HOECHST商购。使用二(4-马来酰亚氨基苯基)甲烷和二甲基二[(N-马来酰亚氨基甲基)氧基]硅烷可得到很好的结果。
其它基于马来酸酐的合适的交联剂是具有如下通式的化合物:其中A指前面描述的桥基,尤其是桥上具有低于20个碳原子的桥基。更尤其桥基A是亚烷基,如六亚甲基,或-D-O-CO-或-CO-O-D-O-CO-,其中D指二价烃基,例如诸如六亚甲基的亚烷基。
其它合适的交联剂是基于丁炔二酸和二元醇的聚酯,如乙二醇、聚乙二醇、丙二醇或聚丙二醇。这些聚酯可以是低分子量的交联剂,如如上所述的,或它们的数均分子量为例如大于400,如在2000-6000的范围内。
本发明还涉及交联剂,如二马来酰亚氨基封端的聚烯化氧,尤其是二马来酰亚氨基封端的聚环氧丙烷。这些交联剂的数均分子量至少为300,优选在1500-5000范围内。聚硅氧烷二马来酰亚胺的通式为H2N-CH2-[O-SiR2]n-O-CH2-NH2,其中n是至少为1的整数,每个R独立地为烷基,尤其是低于5个碳原子的烷基,优选为甲基。二马来酰亚氨基封端的聚硅氧烷可通过使用公知的方法将马来酰亚胺与甲醛N-羟甲基化,随后在碱和水的存在下与合适的二氯代二烷基硅烷反应来制备。
正如前面所提及的,某些实施方案涉及的交联剂在其分子结构中含有2,5-二烷基呋喃片断。在这些交联剂中,2,5-二烷基取代的呋喃基可通过化学键或桥基相互连接。这些桥基的性质通常与含有两个或更多个亲二烯体的交联剂的桥基(如前所述)的性质相同。合适的交联剂的实例是前面描述的二(5-乙基糠基)己二酸酯和(5-乙基糠基)乙酸与二元胺的二酰胺。
2,5-二烷基取代的呋喃片断和/或亲二烯体片断通过化学键合的方式或桥基方式连接到聚合物上。这些桥基可以与交联剂的桥基类型相同。随后将给出实施例。当聚合物是聚苯乙烯时,马来酰亚胺作为亲二烯体可通过聚苯乙烯与N-氯代甲基马来酰亚胺的氯化锡(IV)催化烷基化反应使其附着在聚苯乙烯上;当聚合物是(苯乙烯/马来酸酐)共聚物时,5-乙基糠基可通过在吡啶中用5-乙基糠基醇酯化(苯乙烯/马来酸酐)共聚物使其附着在(苯乙烯/马来酸酐)共聚物上。当聚合物是一氧化碳与烯属不饱和化合物的共聚物(聚合物链含有1,4-二羰基结构)时,可通过将共聚物与合适的取代伯烃基胺反应,例如使用US-A-3979374中已知的方法使2,5-二烷基呋喃和亲二烯体附着在其上。在该反应中,1,4-二羰基结构转化为吡咯结构,形成聚合物链的一部分,并由取代烃基N-取代。例如,一氧化碳与含有1,4-二羰基结构的烯属不饱和化合物的共聚物可与马来酸单酰胺和六亚甲基二胺反应,或与马来酸单酰胺和二(4-氨基苯基)甲烷反应,形成从酰胺芯片断到马来酰亚胺片断的闭环。这样将产生在聚合物链中具有N-(6-马来酰亚胺己基)吡咯或N-{4-[(4’-马来酰亚胺苯基)甲基]苯基}吡咯片断的聚合物。当需要使用含有2,5-二烷基取代的呋喃片断和亲二烯体片断的聚合物时,一氧化碳与烯属不饱和化合物的共聚物的1,4-二羰基结构的一部分可转化为呋喃片断,1,4-二羰基结构的另一部分可转化为N-取代的吡咯结构,其中N-取代基包括亲二烯体。
可再加工交联树脂所基于的聚合物的分子量可有较大不同。合适的聚合物可具有从至少500,优选700,到30000,优选到20000范围的数均分子量。
存在于热可再加工交联树脂中的Diels-Alder加成物的量取决于存在于形成Diels-Alder加成物的组分中2,5-二烷基呋喃基的量和亲二烯体的量。本领域普通技术人员将了解到,需要存在某一最小量的Diels-Alder加成物使得交联树脂在低于Diels-Alder加成物转化为2,5-二烷基取代的呋喃和亲二烯体的温度下为固体材料。还将了解到,该最小量取决于树脂所基于的聚合物的分子量和类型,如果使用任何交联剂,还取决于每分子交联剂中亲二烯体或2,5-二烷基呋喃基团的数量(即官能度)。较小的聚合物分子量要求较多的Diels-Alder加成物的量。当使用具有较高官能度的交联剂时Diels-Alder加成物的量可较少。
通常,通过使用呋喃基与酮基比为1∶16到4∶1的含有2,5-二烷基呋喃的聚合物,可得到好的结果。2,5-二烷基取代的呋喃基团与亲二烯体的摩尔比通常为10∶1到1∶5,优选5∶1到1∶3。
半导体器件和支撑衬底之间灌封的倒装片组件通过以下步骤制得:
由多个焊锡连接物将半导体器件连接到支撑衬底上,所述焊锡连接物从支撑衬底延伸到半导体器件,并在所述支撑衬底和所述半导体器件之间形成空隙,
用热可再加工组合物填充所述空隙来,所述组合物包含:
(a)将具有大于一个官能度的至少一种亲二烯体与至少一种含有2,5-二烷基取代的呋喃聚合物反应制得的热可再加工交联树脂,和
(b)以组分(a)和(b)的总量计,含量为25-75%(重量)的至少一种填料。
通过使用标准设备如注射器或静止混合器可用热可再加工组合物填充支撑衬底和半导体器件之间的空隙,所述混合器将热可再加工组合物各组分混合,并将组合物精确分散在器件的一侧或多侧,以填充空隙。
通常含95份铅和5份锡合金的焊锡凸起提供芯片和衬底的连接方式,用于随后的使用和测试。对于将半导体芯片面朝下与衬底粘结的受控塌陷芯片连接技术的进一步讨论见美国专利No.3401126和3429040,此处参考引用该两篇文献。通常在钝化的半导体器件接触位置形成焊锡凸起,而较低的熔融焊锡在相应衬底焊盘上流动,从而在器件和衬底间形成导电通道。
通常,半导体器件安装在膨胀系数与半导体器件材料(即硅)的膨胀系数不同的材料制成的衬底上。
以组合物(树脂和填料)的重量计,热可再加工组合物中填料的含量通常为粘合剂的25%(重量),优选40%(重量),到75%(重量),优选60%(重量)。填料可以是适合于半导体封装用途的任何无机填料,如高纯度熔融二氧化硅或无定型二氧化硅,或合成玻璃商用填料。填料可选择地用诸如硅烷的耦联剂处理。
通常填料和树脂应当至少基本上不含诸如氯、钠和钾的离子杂质(分别小于20ppm)。本发明的方法提供了消除使用环氧树脂基粘合剂的传统方法中发现的大部分离子杂质的方法。
另外,空隙中的热可再加工组合物可以在热可再加工组合物的熔融温度下加工和/或再加工。通常,可再加工组合物可以在从100℃,优选130℃,到250℃,优选200℃的温度范围内进行加工和/或再加工。如果树脂在高温下延时加热,例如在200℃下延时加热12小时,树脂就进行了不可逆交联,不再热可逆。
热可再加工倒装片灌封剂组合物也可含有其它添加剂,如离子净化剂(如磷酸三钙)、自由基抑制剂(如氢醌、吩噻嗪)、弹性改性剂(如硅氧烷)和其它在倒装片灌封剂组合物中使用的常规添加剂。为得到较长的再加工时间,优选使用离子净化剂和/或自由基抑制剂。
倒装片可粘结到诸如陶瓷或有机物芯片载体的各种衬底和多元件印刷电路板衬底上。载体也可以是多芯片模板,其中许多芯片紧密安装在一块载体上。在许多情况下,衬底和器件的成本较高,如果在测试中发现一个或多个失效倒装片,制造商不愿意丢弃整个衬底。本发明能使用户容易置换失效芯片,而不必丢弃整个衬底和芯片。本发明还可使用户免除在灌封前通常要进行的测试步骤,因为本发明的热可再加工倒装片灌封剂组合物很容易再加工和维修。
用本发明方法制得的在衬底和半导体器件之间已灌封的倒装片组件可进行再加工,即通过在某一温度下加热焊锡连接物和填充到空隙中的热可再加工组合物,所述温度高到足以熔化或软化焊锡连接物,并将热可再加工组合物转化为液体,从而提供液态组合物。然后将半导体器件和液态组合物从支撑衬底上移开,以提供移开了器件的支撑。如果要求在衬底上安装新器件,在对器件安装位置进行重新修整后(如果需要,就清除和重新堆焊衬底上的焊锡和/或焊锡疤),通过将焊锡回流到衬底焊盘上,在器件和衬底间形成导电连接体,从而在所述支撑衬底和所述另一器件间形成空隙,然后用新鲜的热可再加工组合物填充这样形成的空隙,可选择地将另一个器件连接到移开了器件的支撑上,所述组合物含有:
(i)将具有大于一个官能度的至少一种亲二烯体与至少一种含有2,5-二烷基取代的呋喃的聚合物反应制得的热可再加工交联树脂,和
(ii)以组分(i)和(ii)的总量计,含量为25-75%(重量)的至少一种填料。
将填充到空隙中的新鲜热可再加工组合物冷却到足以固化树脂的低温,从而制得再加工组件。
热可再加工组合物可进行后烘烤,以增强热性能和机械性能(如玻璃化温度和机械强度)。为了保存交联树脂的热可逆性,可将热可再加工组合物后加热到从50℃,优选80℃,到200℃,优选160℃的温度范围内的某一温度达4小时。如果不要求热可逆性,可将粘合剂组合物在从150℃,优选180℃,到300℃,优选250℃的温度范围内的某一温度烘烤达4小时,以改善热性能。
例举的实施方案
以下例举的实施方案描述了本发明的新型树脂组合物,它们用于例举目的而不对本发明形成限制。
实施例1
将甲醇和丙烯(重量比约为1.7∶1)充入高压釜中,加热到90℃,然后充入一氧化碳达到72bar压力。注射重量比为0.6∶0.62∶1的乙酸钯、1,3-二(二乙基膦基)-丙烷、三氟甲烷磺酸和0.3的吡啶,在四氢呋喃和甲醇溶液(15∶1体积比)中得到的催化剂溶液,在反应过程中,通过连续供给一氧化碳,保持反应釜压力恒定在72bar。除去溶剂得到数均分子量为733的丙烯/CO交替共聚物。
实施例2
用与实施例1相似的方式,从丙烯和乙烯制备数均分子量为1472的烯烃/CO交替共聚物(27%乙烯,73%丙烯)。将共聚物溶解在甲苯中,在催化量的对甲苯磺酸存在下,通过加热回流进行环化。得到的聚合物用C-13NMR分析,通过在107、114、147和153ppm中心周围出现的C-13NMR信号(呋喃共振),表明在初始聚酮中有56%的酮环化成呋喃(呋喃∶酮为0.64∶1)。
实施例3
凝胶板设置为171℃(340°F),将实施例2制备的呋喃化聚酮分散在板上。将化学计量的甲苯二胺二马来酰亚胺(Compimide ResinTDAB,Technochemie Gmbh)混合到呋喃化的聚酮中,直到得到均匀的混合物。将混合物从凝胶板上移开,在室温下储存。
实施例4
将ICI园锥和平板粘度计设置在175℃温度,并在设定点保持平衡。将少量实施例3的混合物放置在平板上,使之达到该温度。落下圆锥并旋转,在圆锥和平板间获得好的薄膜。通过提起圆锥检查,确认形成好的薄膜。随后将混合物恒温90秒钟,当圆锥以固定速度旋转时得到两个粘度读数。提起圆锥,将混合物从圆锥和平板上取下。在室温下冷却混合物,直到形成交联固体。以上步骤,即装载在ICI圆锥和平板上、在175℃测量粘度、取下混合物、冷却到室温,对同一混合物重复三次。三次粘度的读数依次为3-5厘泊、3-5厘泊和3-5厘泊。该试验表面混合物在室温下的交联状态和175℃下的低粘度非交联液态能可逆地交替转变。
实施例5
实施例2制备的呋喃化聚酮与化学计量的TDAB于171℃(340°F)下在凝胶板上混合。将混合物冷却到室温。将该混合物进一步与二氧化硅填料(总配方50%的重量)在171℃(340°F)混合。然后将填充的配置物从凝胶板移开,并冷却到室温。
实施例6
将ICI园锥和平板粘度计设置在175℃温度,并在设定点保持平衡。将少量实施例5的混合物放置在平板上,并使之达到该温度。落下圆锥并旋转,在圆锥和平板间获得好的薄膜。通过提起圆锥检查,确认形成好的薄膜。随后将混合物恒温90秒钟,当圆锥以固定速度旋转时得到两个粘度读数。提起圆锥,将混合物从圆锥和平板上取下。在室温下冷却混合物,直到形成交联固体。以上步骤,即装载在ICI圆锥和平板上、在175℃测量粘度、取下混合物、冷却到室温,对同一混合物重复三次。三次粘度的读数依次为20-25厘泊、20-25厘泊和20-30厘泊。该试验表面混合物在室温下的交联状态和175℃下的低粘度非交联液态能可逆地交替转变。
实施例7
将甲醇和丙烯(重量比约为1.7∶1)充入高压釜中,加热到90℃,然后充入一氧化碳达到72bar压力。注射两次摩尔比为1∶1.05∶2.1的乙酸钯、1,3-二(二-邻-甲氧苯基膦基)-丙烷、三氟甲烷磺酸,在四氢呋喃和甲醇溶液(15∶1体积比)中得到的催化剂溶液,在反应过程中,通过连续供给一氧化碳,使反应釜压力保持在72bar。除去溶剂得到数均分子量为1765、呋喃与酮的比值为0.19∶1的丙烯/CO交替共聚物。
实施例8
上一个实施例制备的呋喃化聚酮与化学计量的TDAB和2.4%(重量)的吩噻嗪于171℃(340°F)下在凝胶板上混合。将混合物从凝胶板移开并冷却到室温。将该混合物在凝胶板上再热并与二氧化硅填料(总制剂50%的重量)混合。将已填充的制剂从凝胶板移开,并冷却到室温。
实施例9
掩盖有焊锡的8层(环氧玻璃纤维)印刷电路板置于171℃(340°F)的凝胶板上,加热2分钟。将倒装片放在电路板上,将上述实施例制备的已填充的混合物不充满芯片两侧达2-3分钟。将电路板从热的表面移开,并冷却到室温。留在电路板上的芯片通过器件和板之间交联的制剂粘着在电路板上。将电路板放回到凝胶板上。在40秒钟内,由于制剂已从交联的固态转化为液态,使芯片可从电路板上卸下。然后借助于已存在的粘合剂,将倒装片粘着在原来位置上。将电路板从凝胶板上移开,并冷却到室温。将凝胶板放回热的表面,再重复两次以上移开和重新附着的过程。
实施例10
用与实施例1相似的方式制备数均分子量为1616的丙烯/CO交替共聚物(54%头对尾),所不同的是在催化剂溶液中用1,3-二(二-邻甲氧苯基膦基)丙烷代替1,3-二(二乙基膦基)丙烷。将共聚物溶解在甲苯中,在催化量的对甲苯磺酸存在下,通过加热回流进行环化。得到的聚合物用C-13NMR分析,表明在初始聚酮中有57%的酮环化成呋喃(呋喃∶酮为0.66∶1)。
实施例11
将实施例10制备的呋喃化聚酮和化学计量的TDAB以及6.5%(重量)的吩噻嗪加热到180℃,混合后倒入3.2mm(1/8英寸)厚的金属模板中。将模板急冷,测试所得铸件的性能。发现试样的弯曲模量为43bar(628磅/英寸2),该值与由双酚A环氧制造、用酸酐固化剂固化的交联环氧的值相近。介电常数和分散因子分别为3.17和0.013。
实施例12
实施例7制备的呋喃化聚酮与化学计量比为2∶1的亚甲基双苯胺双马来酰亚胺(Compimide Resin MDAB,Technochemie Gmbh)、0.1mol吩噻嗪/每mol MDAB,和0.015gm 2-乙基己酸/每gm呋喃化聚酮反应。用差示扫描热量计以20℃/分钟的斜率对试样进行扫描。玻璃化转化的开始温度发生在105℃。
实施例13
实施例4制备的呋喃化聚酮与化学计量的TDAB和0.1mol吩噻嗪/每mol TDAB,于171℃(340°F)下在凝胶板上反应。将试样研磨并与水以10∶1的比例(水∶试样)置于Parr弹中。Parr弹在60℃保持20小时,通过离子色谱法分析水抽提物中的离子。抽提物中含有14ppm乙酸、<3ppm甘醇酸酯、甲酸酯、丙酸酯、<0.25ppm氯、<1ppm硝酸盐、1.7ppm硫酸盐、4.8ppm钠、0.8ppm镁、2.5ppm钙和0.2ppm铵离子。
Claims (10)
1、一种灌封的倒装片组件,包括:
支撑衬底;
至少一种通过多个焊锡连接物的方式连接到所述支撑衬底上的半导体器件,所述焊锡连接物从所述支撑衬底延伸,在所述支撑衬底和所述半导体器件之间形成间隙;和
填充所述间隙的热可再加工粘合剂,所述热可再加工粘合剂包括:
(a)由具有大于一个官能度的至少一种亲二烯体与至少一种含有2,5-二烷基取代的呋喃的聚合物反应制得的热可再加工交联树脂,和
(b)含量为基于组分(a)和(b)总量25-75%(重量)的至少一种填料,从而得到组件。
2、权利要求1的倒装片组件,其中交联树脂在100-250℃的温度范围内可再加工。
3、权利要求2的倒装片组件,其中亲二烯体是具有连接在乙炔片断两侧的吸电子基团的炔或环化衍生物。
4、权利要求3的倒装片组件,其中亲二烯体选自在5元环中含有丁-2-烯-1,4-二酮片断的化合物,和在6元环中含有丁-2-烯-1,4-二酮片断的化合物。
5、权利要求3的倒装片组件,其中热可再加工树脂另外含有选自二马来酰亚氨基封端的聚烯化氧、二马来酰亚氨基封端的聚硅氧烷、肼的二马来酰亚胺、2,4-二氨基甲苯、六亚甲基二胺、十二亚甲基二胺,和以下通式的取代的和不取代的二胺的交联剂残基:
6、权利要求1或2的倒装片组件,其中含有2,5-二烷基取代呋喃的聚合物通过将一氧化碳与至少一种烯族不饱和化合物反应制得。
7、权利要求1或2的倒装片组件,其中在含有2,5-二烷基取代呋喃的聚合物中的2,5-二烷基取代呋喃基团与亲二烯体以10∶1到1∶5的摩尔比结合。
8、权利要求1或2的倒装片组件,另外包含(c)自由基抑制剂和/或离子净化剂。
9、一种获得灌封的倒装片组件的方法,包括以下步骤:
由多个焊锡连接物将至少一个半导体器件连接到支撑衬底上,所述焊锡连接物从支撑衬底延伸到所述半导体器件,并在所述支撑衬底和所述半导体器件之间形成空隙,
用热可再加工倒装片粘合剂填充所述空隙,所述粘合剂包含:
(a)由具有大于一个官能度的至少一种亲二烯体与至少一种含有2,5-二烷基取代的呋喃聚合物反应制得的热可再加工交联树脂,和
(b)以组分(a)和(b)的总量计,含量为25-75%(重量)的至少一种填料。
10、权利要求9的方法,另外包括以下步骤:
将灌封的倒装片组件加热到足够高到熔化或软化焊锡连接物,并将热可再加工组合物转化为液体的温度,从而得到液态组合物,
将半导体器件从支撑衬底上移开,得到移开了器件的衬底。
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US08/767,058 | 1996-12-16 | ||
US08/767,058 US5760337A (en) | 1996-12-16 | 1996-12-16 | Thermally reworkable binders for flip-chip devices |
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CN1240465A true CN1240465A (zh) | 2000-01-05 |
CN1122083C CN1122083C (zh) | 2003-09-24 |
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CN97180682A Expired - Fee Related CN1122083C (zh) | 1996-12-16 | 1997-12-15 | 倒装片器件用热可再加工粘合剂 |
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US (1) | US5760337A (zh) |
EP (1) | EP0944671B1 (zh) |
JP (1) | JP2001506805A (zh) |
KR (1) | KR20000069484A (zh) |
CN (1) | CN1122083C (zh) |
AU (1) | AU716191B2 (zh) |
BR (1) | BR9713713A (zh) |
CA (1) | CA2275366A1 (zh) |
DE (1) | DE69716637T2 (zh) |
HU (1) | HUP0000811A3 (zh) |
ID (1) | ID21657A (zh) |
IL (1) | IL130144A0 (zh) |
MY (1) | MY118367A (zh) |
TW (1) | TW513479B (zh) |
WO (1) | WO1998027160A1 (zh) |
ZA (1) | ZA9711196B (zh) |
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- 1997-12-15 ID IDW990524A patent/ID21657A/id unknown
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- 1997-12-15 CA CA002275366A patent/CA2275366A1/en not_active Abandoned
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CA2275366A1 (en) | 1998-06-25 |
EP0944671B1 (en) | 2002-10-23 |
US5760337A (en) | 1998-06-02 |
JP2001506805A (ja) | 2001-05-22 |
TW513479B (en) | 2002-12-11 |
AU5761298A (en) | 1998-07-15 |
IL130144A0 (en) | 2000-06-01 |
AU716191B2 (en) | 2000-02-24 |
EP0944671A1 (en) | 1999-09-29 |
ID21657A (id) | 1999-07-08 |
HUP0000811A3 (en) | 2001-05-28 |
HUP0000811A2 (en) | 2000-07-28 |
ZA9711196B (en) | 1998-06-23 |
MY118367A (en) | 2004-10-30 |
WO1998027160A1 (en) | 1998-06-25 |
KR20000069484A (ko) | 2000-11-25 |
BR9713713A (pt) | 2000-02-08 |
DE69716637D1 (de) | 2002-11-28 |
CN1122083C (zh) | 2003-09-24 |
DE69716637T2 (de) | 2003-03-13 |
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