CN1228873A - 具有发光变换元件的发光半导体器件 - Google Patents

具有发光变换元件的发光半导体器件 Download PDF

Info

Publication number
CN1228873A
CN1228873A CN97197402A CN97197402A CN1228873A CN 1228873 A CN1228873 A CN 1228873A CN 97197402 A CN97197402 A CN 97197402A CN 97197402 A CN97197402 A CN 97197402A CN 1228873 A CN1228873 A CN 1228873A
Authority
CN
China
Prior art keywords
luminous
semiconductor device
inverting element
light
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN97197402A
Other languages
English (en)
Other versions
CN1264228C (zh
Inventor
U·雷
K·赫恩
N·斯塔施
G·韦特
P·施洛特
R·施米特
J·施奈德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PATRA PATENT TREUHAND
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26026958&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN1228873(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from DE19625622A external-priority patent/DE19625622A1/de
Priority claimed from DE19638667A external-priority patent/DE19638667C2/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of CN1228873A publication Critical patent/CN1228873A/zh
Application granted granted Critical
Publication of CN1264228C publication Critical patent/CN1264228C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/7716—Chalcogenides
    • C09K11/7718—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7743—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing terbium
    • C09K11/7744—Chalcogenides
    • C09K11/7746—Chalcogenides with alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7767—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7767—Chalcogenides
    • C09K11/7769—Oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01021—Scandium [Sc]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Abstract

发光半导体元件,具有发射射线的半导体主体(1)和一个发光变换元件(4,5)。半导体本体(1)发射光谱段在紫外、蓝和/或绿段的射线,发光变换元件(4,5)将这种射线的一部分变换成波长较长的射线。从而能够通过一个单个的发光半导体主体,将原来发射混合色的发光二极管制成专门发射白光的发光二极管。特别推荐将YAG:Ce作为发光变换染料之用。

Description

具有发光变换元件的发光半导体器件
本发明涉及按照权利要求1前序部分的发光半导体器件。
这种类型的半导体器件，例如从公开文件的DE3804293中有所了解。文中介绍了一种电激发光二极管或激光二极管的结构。在此结构中，通过一个掺有发荧光的变光有机染料的塑料元件将二极管发射的全部发射光谱向波长较大的方向推移。通过这种措施，使这种结构发射出另一种不同于发光二极管发射的颜色的光。通过在塑料中掺入不同种类的染料，用同一种发光二极管就可以制成发射不同颜色的光的发光二极管结构。
在DE-OS2347289中发表了一种红外(IR)固体灯，其中，在一个IR二极管的边沿上涂布荧光剂，从而使该处所发射的IR射线转变成可见光。采用这种措施的目的在于，为了控制的目的，在尽可能小地降低二极管发射的IR射线强度的同时，将其中尽可能小的一部分射线转换成可见光。
另外，在EP486052中发表了一种发光二极管，其中，在基片与一层有源电激发光层之间至少设置一层半导体光激发光层，将来自该有源层朝向基片发射的第一波长段的光变换成第二波长段的光，从而使该发光二极管总共发射各种不同波长段的光。
在发光二极管的许多有发展前途的应用范围中，例如在Kfz仪表盘上的显示元件，飞机和汽车的内部照明，以及在能够发射全色光的发光二极管显示器中，都对发光二极管提出严格的要求，使其能够产生混合光，特别是白光。
在JP-07176794-A中介绍了一种发射白光的平面光源，在其中的一块透明板的前端设置两个发射蓝光的发光二极管，向透明板的内部发射光。在透明板两个相向对面设置的两块主表面中的一个表面上涂有发光物质的涂层，当其受到二极管的蓝光激发之后便会发光。发光物质发射的光的波长与二极管所发射的蓝光的波长有所不同。采用这种已知结构的元件却难以采用这种方式涂布能以使光源发射均匀白光的荧光物质。除此以外，在大批量生产中的可再现性已经成为大问题，因为只要荧光层的厚度略有参差不齐，例如出于透明板表面不平的原因，就会导致发射光的白色色调发生变化。
按照本发明的基本任务是：给出一种按照在开头所述方式的半导体器件，能够均匀发射混合色，既能采用简单工艺方法进行大批量生产，又能在最大程度上保证器件的可再现性特征。
按照权利要求1中的半导体器件就能够完成这项任务。按照本发明的其他有利结构如从属权利要求2至27中所列。在从属权利要求28至30中给出了按照本发明的半导体器件优先选用的用途。
按照本发明的规定具有的发光半导体主体是一种多层结构，特别是由一种用GaxIn1-xN或者GaxAl1-xN制成的有源半导体多层结构，在半导体器件工作时，发射一种由紫外、蓝和/或绿光谱段构成的第一波长段的电磁射线。发光变换元件将来自第一波长段的一部分射线按照下列方式变换为一种第二波长段的射线，也就是由半导体器件发射混合射线、特别是由第一波长段的射线和第二波长段的射线构成的混合色光。这就是说，例如发光变换元件是从半导体主体发射的射线中仅只优先选取第一波长段中的一个光谱段进行选择吸收，然后在波长较长的波段(在第二波长段中)进行发射。优先选择的是在半导体主体发射的波长为λ≤520nm射线中的一个相对的强度最大值，而由发光变换元件选择吸收的光谱中的波长段则是处于这个强度最大值以外。
采用按照本发明的另一个优点是，能够将若干(一个或多个)来自第一波长段的第一光谱段变换成多个第二波长段。从而还可能产生多重色混合和色温的优点。
按照本发明的半导体器件具有的特别优点是通过发光变换产生的波长光谱以及由此发射的光色不受流过半导体主体的工作电流大小的约制。当半导体器件的环境温度发生变化的时候，以及由此造成众所周知的工作电流强度产生剧烈变化的时候，这个优点就会具有特别重大的意义。特别是一种以GaN为基的半导体主体的发光二极管在这方面甚为敏感。
除此以外，按照本发明的半导体器件只能需要一个单独的控制电压，因而也只能需要一个单独的控制电压配置，于是使半导体器件的控制线路所需的设置费用停留在很小的程度。
在按照本发明的特别优先选用的结构形式中，在半导体主体的上方或上面设置了一种部分透明的发光变换层，也就是供发射射线的半导体主体发射射线之用的部分透明的发光变换层。为了保证发射的光肯定能够有统一的颜色，优先选用的是将发光变换层做成具有这样的恒定透射路径的结构，这样就具有特别好的优点，使半导体主体发射的所有发射方向的光穿过发光变换层的路径长度几乎恒定。只有在半导体器件在所有的方向上发射的光都是同样的光的时候方才能够达到这样的要求。一种按照改进结构的、按照本发明的半导体器件的另一个特别好的优点在于，采用简单的方法就能达到高度的再现性，这对于一种有效率的大批量生产来说具有重要意义。可以作为发光变换层之用的是，例如掺有荧光剂的清漆层或者树脂层。
按照本发明的另一种优先选用的结构形式是用部分透明发光变换包壳做的发光变换元件，这种包壳至少包住半导体主体的一部分(有时候还包住导电引线的一部分)，并且同时作为结构包壳(外壳)使用。按照这种结构形式的一种半导体器件的优点主要在于，在进行这种制造时能够因袭使用制造发光二极管(例如径向发光二极管)所惯用的生产线。包壳的结构构件是用发光变换包壳的材料取代普通二极管所用的透明塑料。
采用按照本发明的半导体器件的其他有利结构形式以及上述两个优先选用的结构形式时，发光变换层或者发光变换包壳是用一种至少掺有一种荧光剂的透明材料，例如塑料，优先选用是环氧树脂(优先选用的塑料和荧光剂见以下所述)。采用这种方法时，以采用发光变换元件的制造成本最为经济。为此所用的制造工序与发光二极管的生产线相比不会另加大笔费用。
采用本发明的或者上述结构形式的特别优先选用的改进结构预先需要考虑的是，本波长段或者第二波长段的波长要远远大于第一波长段的波长。
特别要考虑的是，第一波长段的一个第二光谱段和一个第二波长段之间要彼此互补。采用这样的办法，可以从一个统一的有色光源，特别是从一个统一发蓝光的半导体主体产生混合光，特别是白光。例如为了使发蓝光的半导体主体产生白光，要将从半导体主体发射的兰色光谱段中的射线的一部分变换成兰色的补偿色的黄色光谱段。借此通过选用合适的发光变换元件、特别是通过选用合适的荧光剂、荧光剂的粒度、浓度，来改变白光的色温或者色位。除此以外，这种结构还有利于提供一种可能性，即采用混合荧光剂的可能性，从而能够有利于将色调调整到非常精确的程度。纵然如此，例如出于荧光剂不均匀分布的原因，仍然会使发光变换元件发生不均匀发射。通过上述措施，能够有利于对于光线穿过发光变换元件路径的不同长短进行补偿。
通过按照本发明优先选用的半导体器件的结构形式，要使发光变换元件或者构件包壳中的其他构件能以与一种或多种染料适配，而又不会对波长变换产生影响。为此可以使用普通二极管惯用的染料，例如偶氮染料、蒽醌染料或者周萘酮(Perinon)染料。
为了防止发光变换元件受到过高辐射剂量的影响，通过对于半导体器件的有利改造，或者通过上述优先选用的结构形式，至少将半导体主体的一部分表面采用，例如塑料制的透明外壳包住，在其表面上涂布发光变换层，借以减少发光变换元件的放射密度、转而减少其辐射剂量，根据所用材料的不同，对发光变换元件的使用寿命产生良好的影响。
在通过本发明的特别优先选用的措施及其结构形式中，采用一种发射这样射线的半导体主体，即发射的发射光谱的波长在420nm和460nm之间，特别是在430nm处(例如以GaxAl1-xN为基础的半导体主体)，或者在450nm处(例如以GaxIn1-xN为基础的半导体主体)出现一个强度最大值。采用这样的按照本发明的半导体器件，就有利于产生C.I.E．色表中的几乎所有的颜色和混合色。此处发射射线的半导体主体是用如上所列的主要是用电致发光半导体材料，但是也能用一种其他电致发光材料，例如聚合物材料制成。
在本发明的其他特别优先选用的改进结构中以及在其结构形式时，发光变换包壳或发光变换层是用一种清漆或塑料制成的，例如是用一种在光激器件包壳中的硅树脂、热塑性塑料或硬质塑料材料(环氧树脂和丙稀酸树脂)制成的。例如还能用热塑性塑料制成顶盖元件，作为发光变换包壳之用。以上所列的材料能够采用简单的方法掺入一种或多种荧光剂。
当将半导体主体设置在一个缺口中，或在预制好的一个外壳之中，并在缺口处用一个涂有发光变换层的顶盖盖住时，就能特别简单地实现按照本发明的半导体器件。这样的一种半导体器件可以在普通的生产线上大批量制造。对此必须做的仅只是要在该外壳之中安装完半导体主体之后再在外壳上装设，例如用清漆层或铸模树脂层做的覆盖元件，或者盖上用热塑性塑料做的预制盖板。也可以改用透明材料的外壳缺口，例如用透明塑料封填，这样特别不会改变来自半导体主体发射的光线的波长；如果愿意，还可以预先做成发光变换结构。
出于特别容易实现的原因，特别优先选用的按照本发明的半导体器件的改进结构是将半导体主体设置在一个预制的或者业已装好引线框的外壳中，并且将外壳用至少部分透明的铸模树脂填满，在浇注缺口之前，预先掺入荧光剂。由于使用掺有荧光剂的浇注料来浇注半导体主体，就等于设置了发光变换元件。
为制造发光变换元件特别优先选用的材料是掺有一种或多种荧光剂的环氧树脂。也可以采用聚甲基丙烯酸甲酯(PMMA)取代环氧树脂。
可以通过简单的方式在PMMA中掺入有机染料。要想制造发射绿色、黄色和红色的，按照本发明的半导体器件可以使用，例如以周萘烯(Perylen)为基的染料分子。还可以通过掺入4价金属有机化合物的方法来制造发射UV、可见光或红外光的半导体器件。特别是通过掺入Eu3+为基的金属有机螯合物(λ≈620nm)能够实现发射红光的、按照本发明的半导体器件。发射红光的、按照本发明的、特别是发射蓝光的半导体主体的半导体器件能够通过掺入4价蓝宝石的螯合物、或掺入预先掺有Ti+3的蓝宝石进行混合的方法制造。
采用这样的一种方式有利于制造发射白色光的按照本发明的半导体主体，即通过适当选用荧光剂将由半导体主体发射的兰光变换成补偿色的波段，特别是兰色及黄色波段或者变换成叠加三色光，例如蓝、绿、和红光。这样就能通过荧光剂产生黄光，或者产生绿光和红光。由此产生的白色色调(CIE-色表中的色调)能够通过适当选用混合用的染料及其浓度加以改变。
适合于做发射白光的、按照本发明的半导体器件用的荧光剂是，例如发绿光用的BASF Lumogen F 083、发黄光用的BASF Lumogen F 240、发红光用的BASF Lumogen F 300一类的周萘烯荧光剂。这些荧光剂可以采用简单的方式掺入，例如透明树脂中。
一种利用发蓝光的半导体主体来制造发绿光的半导体器件的优先选用的方法是用硼硅酸盐玻璃置换发光变换元件中的UO2 ++。
采用对于按照本发明的半导体器件以及对于上述有利的结构形式的结构进行改进的另一个优先选用的改进结构是在发光变换元件或者结构包壳的其他透射组件中另外掺入称之为扩散剂的光散射颗粒。通过这种办法能够有利于使半导体器件的着色性以及发射性达到最佳化。
按照本发明的半导体器件的一种特别有利的结构形式在于在发光变换元件的至少一部分透明环氧树脂中掺入一种无机荧光剂。最有利的方法也就是采用简单方法使无机荧光剂与环氧树脂形成化合物。一种特别优先选用的、用来制造发白光的半导体器件的无机荧光剂是磷YAG∶Ce(Y3Al5O12∶Ce3+)。这种荧光剂能够采用特别简单的方法与在LED工艺中惯用的透明环氧树脂相混合。其他可以考虑作为荧光剂用的有掺杂稀土元素的石榴石，如Y3Ga5O12∶Ce3+、Y(Al,Ga)5O12∶Ce3+、Y(Al,Ga)5O12∶Tb3+以及掺有稀土元素的碱土金属的硫化物如SrS∶Ce3+,Na,SrS∶Ce3+,Cl,SrS∶CeCl3,CaS∶Ce3+和SrSe∶Ce3+。
此外，掺有稀土元素的硫代没食子酸盐，例如CaGa2S4∶Ce3+,SrGa2S4∶Ce3+特别适合于生成不同类型的混合色光。也可以考虑使用掺有稀土元素的铝酸盐，例如YAlO3∶Ce3+,YGaO3∶Ce3+,Y(Al,Ga)O3∶Ce3+以及掺有稀土元素的正硅酸盐M2SiO5∶Ce3+(M:Sc,Y,Sc)例如Y2SiO5Ce3+。所有钇的化合物原则上都可以用钪或镧替代。
另外一个可用的按照本发明的半导体器件的结构形式是至少采用纯无机材料制成的包壳的发光组件，也就是说，是采用纯无机材料制成的发光变换包壳或发光变换层。因此，发光变换元件是用一种在对温度稳定的透明或部分透明的材料中掺入无机荧光剂制成的。特别是用一种有利的方法在低熔融温度的无机玻璃(例如硅玻璃)中掺入一种无机磷制成的。制造这样的发光变换层的一种优先选用的方法是Sol-Gel-技术，采用这种工艺是将整个发光变换层，不仅是无机荧光剂还有所掺的材料都可以在一道工序中进行。
为了改善由半导体主体发射的第一波长段的射线与经过发光变换的第二波长段的射线的混合，以及发射光的色均匀性，要在按照本发明的半导体器件中采用有利措施，在发光包壳或发光变换层中和/或结构包壳的其他元件中另外掺入一种发蓝光的染料，借以降低由半导体主体发射射线的所称的取向特征。取向特征是指使半导体主体发射的射线呈现一种优先选用的发射方向。
在按照本发明半导体器件的一个优先选用的一种措施中，采用有机荧光剂粉末来达到上述目的，此时的荧光剂不会在其周围的材料(基底)中溶解。另外，有机荧光剂与其周围的材料的折射指数互不相同。这样就增加了一个有利之处，即未被荧光剂吸收的光的部分不会受荧光剂粒度的约制而产生散射。这样就会大大降低半导体主体发射射线的取向特征，从而使未被吸收的射线和经过发光变换的射线得以均匀混合，结果导致产生三维均匀色压。
由于制造发光变换包壳或发光变换层所用的环氧树脂与无机荧光剂(Y3Al5O12∶Ce3+)互相混合，所以一种发射白光的、按照本发明的半导体器件能以特别优选的方式实现。由半导体主体发射的兰色射线的一部分被无机荧光剂移位至黄色的光谱段，因而被推移到与兰色互补的波长段。通过适当选择染料的混合浓度，可以改变白色光的色调(在CIE色表中的色位)。
无机荧光剂YAG∶Ce还有另外的一个优点，即可以由此而成为一种折射指数在1.84左右的不溶性颜料(粒度在10μm以内)。这样除了波长发生变换之外还会产生一种散射效应，结果导致使发射蓝光的二极管的射线和经过变换发射的黄光进行良好的混合。
在另一个按照本发明的半导体器件的优先选用的改进结构中，以及上述有利的制造形式中，向发光变换元件或结构包壳的其他的一个透过射线的构件另外增加掺有称为扩散剂的光散射颗粒。采用这样的办法，有利于色压和半导体器件发射性能的进一步最佳化。
特好的优点在于，按照本发明发射白光的半导体器件及其上述结构形式的、主要以GaN为基制成的发蓝光的半导体主体的发光效率与一个白灼灯泡的发光效率有可比性。其原因在于，这种半导体主体的外部量子输出量只有百分之几，而另一方面有机染料分子的发光效率却经常在90％以上。除此以外，按照本发明的半导体器件与白灼灯泡相比，其使用寿命特长，非常结实，工作电压较小。
另外的有利之处在于，由于肉眼的灵敏度随着波长的增大而增高，所以人眼对于按照本发明的半导体器件亮度的分辨能力与对于未装发光变换元件的相比，纵然同样都装有半导体器件，但对于前者却能够明显提高。另外，按照本发明原理的有利之处还在于当一个半导体主体除了发射紫外射线以外还可改成发射可见光。因此会使半导体主体发射的光的亮度明显提高。
此处所说通过发光变换使半导体主体发射蓝光的概念还可以有利于利用多级发光变换元件按照紫外→蓝→绿→黄→红的顺序加以扩展。此时，要在半导体主体后面按照先后顺序设置对多种光谱选择发射的发光变换元件。
还可以采用有利的方式将多种不同的光谱选择发射的染料分子一并掺入发光变换元件的透明塑料之中。这样就能够产生很宽的色光谱。
专门使用YAG∶Ce作发光变换染料的、按照本发明发射白光的半导体器件的特殊优点在于，这种荧光剂受到蓝光激发会在光谱的吸收和发射之间产生大约100nm的推移。这会导致大大降低对于荧光剂所发射的光的反吸收，结果导致发光效率的提高。另外，YAG∶Ce具有有利的热和光化学的(例如UV-的)高稳定性(主要是高于有机荧光剂)，所以适合于制造在户外和在高温段使用的发白光的二极管。
迄今为止，YAG∶Ce在反吸收、光效率、光化学稳定性以及制造加工方面显然是一种最适用的荧光剂。并且据认为还可以用于在掺有Ce的磷、特别是掺有Ce的石榴石中使用。
按照本发明特别有利的是在于特别适合于全色LED显示的功率消耗小、适合于在Kfz车内或飞机舱内照明、以及在Kfz仪表盘等的显示装置或者液晶显示的照明中使用。
按照本发明的其他特征、优点和实用性参见以下9个实施例结合图1至14的说明。
图1是按照本发明的半导体器件第一实施例的示意剖面图；
图2是按照本发明的半导体器件第二实施例的示意剖面图；
图3是按照本发明的半导体器件第三实施例的示意剖面图；
图4是按照本发明的半导体器件第四实施例的示意剖面图；
图5是按照本发明的半导体器件第五实施例的示意剖面图；
图6是按照本发明的半导体器件第六实施例的示意剖面图；
图7是具有以GaN为基的一个多层结构的一个发射蓝光的半导体主体的发射光谱示意图；
图8是按照本发明的两个发射白光的半导体器件的发射光谱示意图；
图9是发射蓝光的半导体主体的剖面示意图；
图10是按照本发明的半导体器件第七实施例的示意剖面图；
图11是发射混合红光的按照本发明的半导体器件的发射光谱示意图；
图12是发射白光的按照本发明其他的半导体器件的发射光谱示意图；
图13是按照本发明的半导体器件第八实施例的示意剖面图；
图14是按照本发明的半导体器件第九实施例的示意剖面图。
在各图中的同样或起同样作用的部分都标以同样的标号。
图1所示的发光半导体器件具有一个半导体主体1、一个背面接触件11、一个正面接触件12和一个由不同的叠层叠置成的多层结构7，其中还有一个在半导体器件工作状态中发射至少一种射线(例如紫外、蓝或绿)的有源区。
图9所示是适合于作为这种元件以及所有在以后介绍的实施例中的元件的一种多层结构7的示例。图中，在用SiC制成的基片18上设置一层涂有AlN-或者GaN-层19、一层n-导通的GaN-层20、一层n-导通的GaxAl1-xN-或者GaxIn1-xN-层21、一个另外的n-导通的GaN-或者一层GaxIn1-xN-层22、一层p-导通的GaxAl1-xN-层或者GaxIn1-xN-层23和一层p-导通的GaN-层24的多层结构。在GaN-层24的一个主表面25上，以及在基片18的一个主表面26上分别设置一个金属接触件27,28，这是采用在惯用的发光半导体技术的导电接触件中所用的材料制成的。
也可以采用根据其他技术人员认为是适合的其他半导体主体作为按照本发明的半导体器件使用。这同样适用于以下所述所有的实施例。
在图1的实施例中，半导体主体采用一种导电粘接剂，例如一种金属焊料或者粘接材料将其底面接触件11固定在第一导电引线2上。正面接触件12采用一条粘结金属丝14与一个第二导电引线3连接。
将半导体主体1未占用的表面和导电引线2及3的一部分线段直接用一种发光变换包壳5包住。这种包壳是优先选用一种在透明发光二极管中使用的掺有荧光剂6的、优先选用掺有有机荧光剂的透明塑料(优先选用是环氧树脂或者也可以用聚甲基丙烯酸甲酯)制成的；发白光的器件优先选用Y3Al5O12∶Ce3+(YAG∶Ce)掺和。
在图2中所示的一个按照本发明半导体构件的实施例与图1的不同之处在于，半导体主体1和导电引线2及3的部分线段不是用一种发光变换材料、而是用一种透明包壳15包住。这种包壳不会使半导体主体1发射的射线波长发生变化；是用一种，例如在发光二极管工艺中惯用的环氧树脂、或丙烯酸酯树脂、或另一种能够透光的材料，例如无机玻璃制成的。
在这种透明的包壳15上涂布一层发光变换层4，如图2所示，将包壳15的整个表面包住，也可以用发光变换层4仅只包住这个表面的一部分。发光变换层4仍然是用，例如由一种掺有荧光剂6的透明塑料(例如环氧树脂，清漆或甲基丙烯酸甲酯)制成的。这样发白光的半导体器件也是优先选用YAG∶Ce作为荧光剂。
这个实施例特有的优点在于，由半导体主体发射的射线穿过发光变换元件的路径长度大体相等。正像经常发生的那样，当由半导体器件发射的光的精确色调要取决于该路径的长度时，这个长度就会起到特别重要的作用。
为了改善图2中的发光变换层4所发出的光的输出耦合，可以在该器件的一个侧面上设置一个透镜状的覆盖体29(用虚线表示)，用来衰减发射光在发光变换层4内部的全反射。这个透镜状的覆盖体29可以用透明塑料或玻璃制造，然后，例如粘结在发光变换层4上，或者直接制成作为发光变换层4的构件的整体结构。
在图3所示的实施例中，第一和第二引线2、3是预埋在透光的或者预制的、开出一个缺口9的基座8中。所谓“预制”是指，在将半导体主体安装在引线2上之前采用，例如注塑法预先将底座8连接在引线2,3上形成的成品结构。底座8是，例如由一种透光的塑料制成的，缺口9是按照其形状作成在半导体主体工作期间用来反射所发射的射线之用的反射镜(有时候通过缺口9内壁上的合适涂层)。这样的底座8是作为对于安装在其上面的发光二极管的导电板之用的。在安装半导体主体之前是采用，例如注塑法将底座装设在导电引线2、3的导电带(引线框)上。
缺口9是用与一层发光变换层4分开单独单独制造、并且固定在底座8上的塑料制的盖板17盖住。适合做发光变换层4的材料仍然是在以上说明的通论部分中的所列的、掺有在该文中所列有关荧光剂的塑料或无机玻璃。该缺口9既可以用一种塑料、用一种无机玻璃或者用气体充填，也可以抽成真空。
正像图2中的实施例那样，为了改善来自发光变换层4的光耦合，此处也可以在其上方设置一个透镜状的覆盖体29(用虚线表示)，用来衰减在发光变换层4发射的光的全反射。这种覆盖体可以用透明塑料制造，粘在，例如发光变换层4的上面，或者和发光变换层4共同作成一个整体结构。
如图10所示，在一种特别优先选用的制造形式中，缺口9用一种含有荧光剂的环氧树脂、也就是说是用一种发光包壳5充填，形成发光变换元件的结构。在此情况下就可以省却一个盖板17和/或一个透镜状的覆盖体29。此外，还有如图13所示的另一种办法，例如将第一导电引线2通过冲压在半导体主体1的范围以内作成一个反光镜34的结构，中间用一种发光变换包壳5充填。
图4所示是一种称为径向二极管的另一种制造方法的示例。图中，半导体主体1是通过，例如焊接或粘结的方法，固定在用第一导电引线2作成的一种反光镜结构部件16之中。这种外壳形状的结构是在发光二极管工艺中惯用的形状，所以在此处不再作详细说明。
在图4的实施例中的半导体主体1是用一种透明包壳15包住，正如在上述第二实施例(图2)所示，不会使半导体主体1发射的射线的波长发生变化，可以采用，例如在发光二极管工艺中惯用的透明环氧树脂或玻璃制造。
在这种透明的包壳15上面涂布一层发光变换层4。为此所用的材料仍然可以是在以上所述的实施例中采用的塑料或无机玻璃，再加上在该处所列的有关染料。
由半导体主体1、一部分导电引线2,3、透明包壳15和发光变换层4构成的整个结构直接用另一种透明包壳10包住。不会使透过发光变换层4发射的射线的波长发生变化。这种包壳仍然是，例如采用在发光二极管工艺中惯用的透明环氧树脂或者无机玻璃制成的。
图5所示的实施例与图4中的主要不同之处在于，半导体主体1的未占用表面直接用一个发光变换包壳5包住，然后再用另一种透明包壳10包住。在图5中，还作为示例绘出一个半导体主体1，其不用下沿作接触件、而是改用半导体多层结构7的另一个接触面作接触件，后者利用一条第二连接金属线14与其所属的导电引线2或3连接。不言而喻，也可以用本文介绍的其他实施例取代这样的半导体主体1。反之，当然也可以将图5中的实施例在前述实施例中使用。
还要在此处对于这种不言而喻的情况加以解释，也可以将图5所用的结构形状比拟图1实施例的办法制成一个整体发光变换包壳5，从而取代将发光变换包壳5与另一个透明包壳10结合使用的办法。
在图6的实施例中，直接在半导体主体1上涂布一层发光变换层4(可用以上所列的材料)。该半导体主体1和一部分导电引线2,3用另一种透明包壳10包住，不会使透过发光变换层4发射的射线的波长发生变化。这种包壳仍然是，例如采用在发光二极管工艺中惯用的透明环氧树脂或者无机玻璃制成的。
像这样具有一层发光变换层4、但没有包壳的半导体主体1当然还有利于完全采用在半导体工艺中惯用的外壳形状(例如SMD外壳、径向外壳(请参阅图5))。
在图14中所示的实施例是按照本发明的一个半导体器件，在半导体主体1上设置一个透明的槽形部件35，这就是在半导体主体1外面的一个包槽36。槽状部件35，例如是用透明环氧树脂或者无机玻璃制成的，并且，例如采用注塑法，将导电引线2,3连同半导体主体1包封在一起制成的。在这样的包槽36中，包含涂有一层仍然是用环氧树脂或无机玻璃制成的发光变换层4，其中掺有以上所列的无机荧光剂颗粒37。采用这种结构的有利条件在于，能以保证结构非常简单，在半导体器件的制造过程中荧光剂不会聚集在预先未曾考虑到的，例如在半导体主体附近的部位。槽状部件35当然也可以另行单独制造，也可以改用，例如罩在半导体主体1上的办法固定在一个外壳构件上。
在所有以上介绍的实施例中，为了使颜色介入发射光的程度达到最佳化，为了使其与发光变换元件(发光变换包壳5或发光变换层4)相适配，有时要在透明包壳15、和/或透明包壳10中掺入光散射颗粒，最为有利的是掺入扩散剂。作为这样的扩散剂的示例是矿物性的填充剂，特别是CaF2、TiO2、SiO2、CaCO3或BaSO4，或者也可以用有机颜料。这些物料可以采用简单的方法掺入上述的塑料之中。
图7、8和12所示是半导体主体发射的一种蓝光的发射光谱(图7)(发光最大值在λ~430nm)或者采用一种这样的半导体主体制成的发白光的、按照本发明的半导体器件(图8及图12)的发射光谱。在横坐标上分别以nm为单位标注波长λ；在纵坐标上分别标注一种相对的电致发光(EL)强度。
图7所示由半导体主体发射的射线仅只有一部分被变换成为波长较长的波长段，从而产生混合色的白光。在图8中以虚线表示的曲线30是按照本发明的一种半导体器件的发射光谱，这种射线是由两种辅助波长段(蓝和黄)形成的，总体发射的是白光。图中的光谱在大约400和430nm之间(蓝)以及在大约550和580nm之间(黄)分别出现一个最大值。整条曲线31表示一个按照按照本发明的半导体器件的发射光谱，白色是由三种波长段(由蓝、绿、红构成的叠加三色)混合而成的。图中的发射光谱例如在430nm左右(蓝)、500nm左右(绿)和615nm左右(红)处分别有一个最大值。
另外在图11中示出发射由蓝光(一种波长的最大值在大约470nm)和红光(一种波长的最大值在620nm左右)构成的混合光的按照本发明的半导体器件的发射光谱。发射光对人眼的总色压为品红色。此处由半导体主体发射的发射光谱仍然相当于图7所示。
图12所示是一个发白光的、按照本发明的半导体器件，具备发射图7所示发射光谱的半导体主体，其中所用的荧光剂是YAG∶Ce。在半导体主体发射的射线中，只有一小部分被变换成波长较长的波长段，因而产生混合白光。图8中用不同虚线绘制的曲线31至33是表示按照本发明的半导体器件的发射光谱。发光变换元件，其中的发光变换元件是用环氧树脂制成的，含有不同浓度的YAG∶Ce。每个发射光谱分别在兰色光谱段的λ=420nm和λ=430之间、在绿色光谱段的λ=520和λ=545之间出现一个强度最大值，其中含有一个较长波长的强度最大值的发射波段的一大部分都处于黄色光谱段。由图12曲线中明显可见，采用按照本发明的半导体器件只要简单地通过改变环氧树脂中的荧光剂的浓度，就能够改变白光中的CIE-色位。
另外，还可以将掺有Ce的石榴石、硫代没食子酸、碱土金属-硫化物铝酸盐直接涂在半导体主体上，不必将其分散在环氧树脂或玻璃中。上述无机荧光剂的另外的一个特殊优点在于，荧光剂在例如环氧树脂中的浓度不会像有机荧光剂那样要受溶解度的约制。因而不需要用很厚的发光变换元件。
借助上述实施例对于按照本发明半导体器件的说明当然不会将按照本发明局限在这些实施例上。在示例中是以发光二极管芯片或激光二极管芯片作为半导体主体的示例，还可以理解为，例如是一个发射相应光谱的聚合物LED。

Claims (30)

1．发光半导体器件，具有一个半导体主体(1)，其在半导体器件工作时发射电磁射线；具有至少一个第一引线和至少一个第二引线(2,3)，其与半导体主体(1)作导电连接；还具有一个至少含有一种荧光剂的发光变换元件，其特征在于：半导体主体(1)含有一个半导体多层结构(7)，其适合于在半导体器件工作时发射由紫外、蓝和/或绿色光谱段形成的第一波长段，发光变换元件将来自第一波长段发射的射线变换成与第一波长段不同的第二波长段的射线，从而使该半导体器件发射由第一波长段的射线和第二波长段的射线形成的混合射线。
2．如权利要求1的发光半导体器件，其特征在于，发光变换元件将第一波长段的射线变换成由多种各不相同的光谱段形成的第二波长段的射线，从而使该半导体器件发射由第一波长段的射线和第二波长段形成的混合射线。
3．如权利要求1的发光半导体器件，其特征在于，沿着从半导体器件的主发射方向观察，发光变换元件主要是沿着半导体主体(1)配置的。
4．如权利要求1至3之一的发光半导体器件，其特征在于，在半导体主体(1)的上方或上面至少具有一层发光变换层(4)，作为发光变换元件之用。
5．如权利要求1至3之一的发光半导体器件，其特征在于，具有一个发光变换包壳(5)，其至少包住半导体主体(1)的一部分以及导电引线(2,3)的部分线段，以此作为发光变换元件之用。
6．如权利要求1至5之一的发光半导体器件，其特征在于，第二波长段至少包括一部分波长λ大于第一波长段的波长的部分。
7．如权利要求1至6之一的发光半导体器件，其特征在于，半导体主体(1)在工作状态中发射紫外线，发光变换元件至少将该紫外线的一部分变换成可见光。
8．如权利要求1至7之一的发光半导体器件，其特征在于，在混合射线中的第一波长段和第二波长段中至少有一部分是互补色，所以产生白光。
9．如权利要求2以及权利要求2与权利要求3至7之一相结合的发光半导体器件，其特征在于，由半导体主体发射的第一波长段和两个第二波长段产生的叠加三重色，从而使半导体器件发射白色光。
10．如权利要求1至9之一的发光半导体器件，其特征在于，由半导体主体(1)发射的射线中的兰色光谱段在λ=430nm或在λ=450nm处有一个发光强度最大值。
11．如权利要求1至10之一的发光半导体器件，其特征在于，半导体主体(1)设置在一个透光底座(8)的一个缺口(9)中，缺口(9)具有一层含有发光变换层(4)的覆盖层。
12．如权利要求1至11之一的发光半导体器件，其特征在于，半导体主体(1)设置在一个透光底座(8)的一个缺口(9)中，缺口(9)至少有一部分用发光变换元件充填。
13．如权利要求1至12之一的发光半导体器件，其特征在于，发光变换元件具有不同波长变换性能的多层叠层。
14．如权利要求1至13之一的发光半导体器件，其特征在于，发光变换元件在一种塑料基体中、特别是在由硅树脂材料、热塑性塑料材料或硬质塑料材料制成的塑料基体中含有有机染料分子。
15．如权利要求14的发光半导体器件，其特征在于，发光变换元件在环氧树脂基体中含有有机染料分子。
16．如权利要求14的发光半导体器件，其特征在于，发光变换元件在聚甲基丙稀酸甲酯基体中含有有机染料分子。
17．如权利要求1至13之一的发光半导体器件，其特征在于，发光变换元件(4,5)至少含有磷族元素的无机荧光剂(6)。
18．如权利要求17的发光半导体器件，其特征在于，无机荧光剂是用掺杂Ce元素的石榴石制成的。
19．如权利要求18的发光半导体器件，其特征在于，无机荧光剂是YAG∶Ce。
20．如权利要求17至19之一的发光半导体器件，其特征在于，无机荧光剂是掺在环氧树脂基体之中的。
21．如权利要求17至19之一的发光半导体器件，其特征在于，无机荧光剂是掺在一种低熔融温度的无机玻璃基体之中的。
22．如权利要求20或21的发光半导体器件，其特征在于，无机荧光剂的平均粒度约为10μm。
23．如权利要求1至22之一的发光半导体器件，其特征在于，在发光变换元件中含有多种不同的有机和/或无机荧光剂(6)。
24．如权利要求1至23之一的发光半导体器件，其特征在于，在发光变换元件中含有具有以及不具有波长变换作用的多种不同的有机和/或无机染料分子。
25．如权利要求1至24之一的发光半导体器件，其特征在于，在发光变换元件和/或一种透明包壳(10,15)中含有光散射颗粒。
26．如权利要求1至25之一的发光半导体器件，其特征在于，在发光变换元件中含有一种或多种发光的4价有机金属化合物。
27．如权利要求1至26之一的发光半导体器件，其特征在于，在发光变换元件和/或一种透明包壳(10,15)中至少含有一种发蓝光的荧光剂。
28．按照权利要求1至27之一的一种多个发光半导体器件在全色LED显示装置中的应用。
29．按照权利要求1至27之一的一种多个发光半导体器件在飞机舱内部空间照明的应用。
30．按照权利要求1至27之一的一种发光半导体器件在显示装置中，特别是在液晶装置中用于照明的应用。
CNB971974020A 1996-06-26 1997-06-26 发光半导体器件、全色发光二极管显示装置及其应用 Expired - Lifetime CN1264228C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19625622.4 1996-06-26
DE19625622A DE19625622A1 (de) 1996-06-26 1996-06-26 Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19638667.5 1996-09-20
DE19638667A DE19638667C2 (de) 1996-09-20 1996-09-20 Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement

Related Child Applications (7)

Application Number Title Priority Date Filing Date
CNB2005100917308A Division CN100433382C (zh) 1996-06-26 1997-06-26 半导体器件外壳用的单独覆盖元件和含有覆盖元件的装置
CNB2005100917295A Division CN100442555C (zh) 1996-06-26 1997-06-26 发射射线的半导体器件及包含该半导体器件的装置
CN2003101181788A Division CN1534802B (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件
CN200610101629.0A Division CN1893136B (zh) 1996-06-26 1997-06-26 发光半导体器件和含有该发光半导体器件的装置
CN2003101181792A Division CN1534803B (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件
CN200610101860XA Division CN1917240B (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件
CNB2005100917280A Division CN100565945C (zh) 1996-06-26 1997-06-26 发射射线的半导体芯片及包含该半导体芯片的装置

Publications (2)

Publication Number Publication Date
CN1228873A true CN1228873A (zh) 1999-09-15
CN1264228C CN1264228C (zh) 2006-07-12

Family

ID=26026958

Family Applications (3)

Application Number Title Priority Date Filing Date
CN2003101181788A Expired - Lifetime CN1534802B (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件
CN2003101181792A Expired - Lifetime CN1534803B (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件
CNB971974020A Expired - Lifetime CN1264228C (zh) 1996-06-26 1997-06-26 发光半导体器件、全色发光二极管显示装置及其应用

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CN2003101181788A Expired - Lifetime CN1534802B (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件
CN2003101181792A Expired - Lifetime CN1534803B (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件

Country Status (9)

Country Link
US (10) US7078732B1 (zh)
EP (12) EP1441395B9 (zh)
JP (10) JP3773541B2 (zh)
KR (11) KR20040111701A (zh)
CN (3) CN1534802B (zh)
BR (2) BRPI9715293B1 (zh)
DE (6) DE29724543U1 (zh)
HK (1) HK1022564A1 (zh)
WO (1) WO1997050132A1 (zh)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936852B2 (en) 2000-07-31 2005-08-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US7098588B2 (en) 1999-12-30 2006-08-29 Osram Opto Semiconductors Gmbh Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source
CN1327579C (zh) * 2002-10-03 2007-07-18 夏普株式会社 发光装置
CN100336233C (zh) * 2001-10-31 2007-09-05 奥斯兰姆奥普托半导体有限责任公司 光电元件
CN100358164C (zh) * 2003-08-12 2007-12-26 斯坦雷电气株式会社 波长变换型发光二极管
CN100377370C (zh) * 2003-11-22 2008-03-26 鸿富锦精密工业（深圳）有限公司 发光二极管和面光源装置
CN100389502C (zh) * 2002-07-12 2008-05-21 斯坦雷电气株式会社 发光二极管
CN100400961C (zh) * 2003-09-05 2008-07-09 日亚化学工业株式会社 用于交通工具的发光设备
CN100405620C (zh) * 2002-06-13 2008-07-23 美商克立股份有限公司 饱和型磷光体固态发射器
CN100416869C (zh) * 2002-09-30 2008-09-03 奥斯兰姆奥普托半导体有限责任公司 发射射线的半导体器件及其制造方法
CN100440555C (zh) * 2004-04-28 2008-12-03 松下电器产业株式会社 发光装置及其制造方法
CN100565000C (zh) * 2008-08-11 2009-12-02 山东华光光电子有限公司 利用yag透明陶瓷制备白光led的方法
US7696690B2 (en) 2002-12-25 2010-04-13 Japan Science And Technolgoy Agency Short-wavelength light-emitting element arranged in a container with a window having a window board formed of a calcium fluoride crystals
CN1937270B (zh) * 2005-09-22 2010-08-25 三洋电机株式会社 发光装置
CN101300687B (zh) * 2005-10-28 2010-10-06 飞利浦拉米尔德斯照明设备有限责任公司 在led上层压包含磷光体的密封剂膜
CN101356656B (zh) * 2006-01-04 2011-01-26 罗姆股份有限公司 薄型发光二极管灯及其制造方法
CN102022643A (zh) * 2009-09-18 2011-04-20 松下电工株式会社 发光装置
CN103582689A (zh) * 2011-04-12 2014-02-12 皇家飞利浦有限公司 具有大于80的cri的发光转换器、磷光增强光源或灯具

Families Citing this family (749)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6600175B1 (en) 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
US20040239243A1 (en) * 1996-06-13 2004-12-02 Roberts John K. Light emitting assembly
KR20040111701A (ko) * 1996-06-26 2004-12-31 지멘스 악티엔게젤샤프트 발광 변환 소자를 포함하는 발광 반도체 소자
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
AU744210B2 (en) * 1996-07-29 2002-02-21 Nichia Corporation Light emitting device and display
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
DE19645035C1 (de) * 1996-10-31 1998-04-30 Siemens Ag Mehrfarbiges Licht abstrahlende Bildanzeigevorrichtung
US5895932A (en) * 1997-01-24 1999-04-20 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
JP3378465B2 (ja) 1997-05-16 2003-02-17 株式会社東芝 発光装置
EP0883195A1 (en) * 1997-06-03 1998-12-09 BARR & STROUD LIMITED Head tracking system comprising LED with fluorescent coating
US6319425B1 (en) 1997-07-07 2001-11-20 Asahi Rubber Inc. Transparent coating member for light-emitting diodes and a fluorescent color light source
US6623670B2 (en) 1997-07-07 2003-09-23 Asahi Rubber Inc. Method of molding a transparent coating member for light-emitting diodes
JP4271747B2 (ja) * 1997-07-07 2009-06-03 株式会社朝日ラバー 発光ダイオード用透光性被覆材及び蛍光カラー光源
US5847507A (en) * 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
EP1014455B1 (en) 1997-07-25 2006-07-12 Nichia Corporation Nitride semiconductor device
US7161313B2 (en) * 1997-08-26 2007-01-09 Color Kinetics Incorporated Light emitting diode based products
US6806659B1 (en) * 1997-08-26 2004-10-19 Color Kinetics, Incorporated Multicolored LED lighting method and apparatus
US7014336B1 (en) * 1999-11-18 2006-03-21 Color Kinetics Incorporated Systems and methods for generating and modulating illumination conditions
US20030133292A1 (en) * 1999-11-18 2003-07-17 Mueller George G. Methods and apparatus for generating and modulating white light illumination conditions
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
DE19755734A1 (de) * 1997-12-15 1999-06-24 Siemens Ag Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelementes
US6580097B1 (en) * 1998-02-06 2003-06-17 General Electric Company Light emitting device with phosphor composition
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6152590A (en) 1998-02-13 2000-11-28 Donnelly Hohe Gmbh & Co. Kg Lighting device for motor vehicles
US6501091B1 (en) * 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
FR2779694B1 (fr) * 1998-06-10 2000-08-11 Sagem Tableau de bord a eclairage polychrome
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
ES2299260T5 (es) † 1998-09-28 2011-12-20 Koninklijke Philips Electronics N.V. Sistema de iluminación.
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
JP2000208822A (ja) 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
DE19902750A1 (de) 1999-01-25 2000-08-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement zur Erzeugung von mischfarbiger elektromagnetischer Strahlung
US6683325B2 (en) * 1999-01-26 2004-01-27 Patent-Treuhand-Gesellschaft-für Elektrische Glühlampen mbH Thermal expansion compensated opto-electronic semiconductor element, particularly ultraviolet (UV) light emitting diode, and method of its manufacture
JP2000223749A (ja) * 1999-01-29 2000-08-11 Seiwa Electric Mfg Co Ltd 発光ダイオードランプとその製造方法、チップ型発光ダイオード素子及びドットマトリクス型発光ダイオードユニット
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
US6351069B1 (en) * 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
KR100683877B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
US6514435B1 (en) * 1999-03-05 2003-02-04 The United States Of America As Represented By The Secretary Of The Navy High density and fast persistent spectral holeburning in II-VI compounds for optical data storage
US6528234B1 (en) * 1999-03-05 2003-03-04 The United States Of America As Represented By The Secretary Of The Navy II-VI compounds as a medium for optical data storage through fast persistent high density spectral holeburning
DE19922361C2 (de) 1999-05-14 2003-05-28 Osram Opto Semiconductors Gmbh LED-Modul für Anzeigeeinrichtungen
US6489637B1 (en) * 1999-06-09 2002-12-03 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP3825318B2 (ja) 1999-07-23 2006-09-27 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光物質装置、波長変換注入成形材および光源
JP2003505582A (ja) 1999-07-23 2003-02-12 パテント−トロイハント−ゲゼルシヤフト フユール エレクトリツシエ グリユーラムペン ミツト ベシユレンクテル ハフツング 光源用発光物質および発光物質を有する光源
DE29914037U1 (de) * 1999-08-11 2000-12-28 Diehl Ako Stiftung Gmbh & Co Innenraumbeleuchtung für Hausgeräte
US6504301B1 (en) 1999-09-03 2003-01-07 Lumileds Lighting, U.S., Llc Non-incandescent lightbulb package using light emitting diodes
KR100683364B1 (ko) 1999-09-27 2007-02-15 필립스 루미리즈 라이팅 캄파니 엘엘씨 완전한 형광 물질 변환에 의해 백색광을 생성하는 발광다이오드 소자
US6686691B1 (en) 1999-09-27 2004-02-03 Lumileds Lighting, U.S., Llc Tri-color, white light LED lamps
US6696703B2 (en) 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
US20020176259A1 (en) * 1999-11-18 2002-11-28 Ducharme Alfred D. Systems and methods for converting illumination
US8829546B2 (en) 1999-11-19 2014-09-09 Cree, Inc. Rare earth doped layer or substrate for light conversion
US7202506B1 (en) 1999-11-19 2007-04-10 Cree, Inc. Multi element, multi color solid state LED/laser
US6513949B1 (en) 1999-12-02 2003-02-04 Koninklijke Philips Electronics N.V. LED/phosphor-LED hybrid lighting systems
DE19963805B4 (de) 1999-12-30 2005-01-27 Osram Opto Semiconductors Gmbh Weißlichtquelle auf der Basis nichtlinear-optischer Prozesse
DE10010638A1 (de) 2000-03-03 2001-09-13 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtabstrahlenden Halbleiterkörpers mit Lumineszenzkonversionselement
US6522065B1 (en) * 2000-03-27 2003-02-18 General Electric Company Single phosphor for creating white light with high luminosity and high CRI in a UV led device
US6867542B1 (en) * 2000-03-29 2005-03-15 General Electric Company Floating chip photonic device and method of manufacture
US6603258B1 (en) * 2000-04-24 2003-08-05 Lumileds Lighting, U.S. Llc Light emitting diode device that emits white light
DE10020465A1 (de) 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE10023353A1 (de) * 2000-05-12 2001-11-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung
US6501100B1 (en) * 2000-05-15 2002-12-31 General Electric Company White light emitting phosphor blend for LED devices
JP4066620B2 (ja) * 2000-07-21 2008-03-26 日亜化学工業株式会社 発光素子、および発光素子を配置した表示装置ならびに表示装置の製造方法
JP2002141556A (ja) 2000-09-12 2002-05-17 Lumileds Lighting Us Llc 改良された光抽出効果を有する発光ダイオード
JP3609709B2 (ja) * 2000-09-29 2005-01-12 株式会社シチズン電子 発光ダイオード
US6650044B1 (en) * 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
JP3614776B2 (ja) * 2000-12-19 2005-01-26 シャープ株式会社 チップ部品型ｌｅｄとその製造方法
US6800870B2 (en) * 2000-12-20 2004-10-05 Michel Sayag Light stimulating and collecting methods and apparatus for storage-phosphor image plates
US20020079505A1 (en) * 2000-12-21 2002-06-27 Stefan Becker Semiconductor light unit and method for production of the same
DE10065381B4 (de) * 2000-12-27 2010-08-26 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP2002195858A (ja) * 2000-12-27 2002-07-10 Nippon Seiki Co Ltd 表示装置
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
US6930737B2 (en) * 2001-01-16 2005-08-16 Visteon Global Technologies, Inc. LED backlighting system
MY145695A (en) 2001-01-24 2012-03-30 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
JP2002232013A (ja) * 2001-02-02 2002-08-16 Rohm Co Ltd 半導体発光素子
DE10105802A1 (de) 2001-02-07 2002-08-08 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Reflektorbehaftetes Halbleiterbauelement
DE10109349B4 (de) * 2001-02-27 2012-04-19 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
US6417019B1 (en) * 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode
US6949771B2 (en) * 2001-04-25 2005-09-27 Agilent Technologies, Inc. Light source
US6598998B2 (en) * 2001-05-04 2003-07-29 Lumileds Lighting, U.S., Llc Side emitting light emitting device
US6989412B2 (en) 2001-06-06 2006-01-24 Henkel Corporation Epoxy molding compounds containing phosphor and process for preparing such compositions
US6642652B2 (en) 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
US6576488B2 (en) 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
JP4789350B2 (ja) * 2001-06-11 2011-10-12 シチズン電子株式会社 発光ダイオードの製造方法
JP2004531894A (ja) * 2001-06-15 2004-10-14 クリー　インコーポレイテッド 紫外線発光ダイオード
DE10131698A1 (de) * 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
TW552726B (en) * 2001-07-26 2003-09-11 Matsushita Electric Works Ltd Light emitting device in use of LED
DE10137641A1 (de) * 2001-08-03 2003-02-20 Osram Opto Semiconductors Gmbh Hybrid-LED
JP3948650B2 (ja) 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド 発光ダイオード及びその製造方法
JP2003152227A (ja) * 2001-11-14 2003-05-23 Citizen Electronics Co Ltd Ｌｅｄの色補正手段および色補正方法
JP3768864B2 (ja) * 2001-11-26 2006-04-19 シチズン電子株式会社 表面実装型発光ダイオード及びその製造方法
WO2003062775A1 (en) * 2002-01-17 2003-07-31 Hutchinson Technology Inc. Spectroscopy light source
US6734466B2 (en) * 2002-03-05 2004-05-11 Agilent Technologies, Inc. Coated phosphor filler and a method of forming the coated phosphor filler
US6943379B2 (en) * 2002-04-04 2005-09-13 Toyoda Gosei Co., Ltd. Light emitting diode
KR100632659B1 (ko) * 2002-05-31 2006-10-11 서울반도체 주식회사 백색 발광 다이오드
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US7088040B1 (en) * 2002-06-27 2006-08-08 University Of Central Florida Research Foundation, Inc. Light source using emitting particles to provide visible light
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
US7928455B2 (en) * 2002-07-15 2011-04-19 Epistar Corporation Semiconductor light-emitting device and method for forming the same
WO2004017407A1 (de) * 2002-07-31 2004-02-26 Osram Opto Semiconductors Gmbh Oberflächenmontierbares halbleiterbauelement und verfahren zu dessen herstellung
JP4360788B2 (ja) * 2002-08-29 2009-11-11 シチズン電子株式会社 液晶表示板用のバックライト及びそれに用いる発光ダイオードの製造方法
US7800121B2 (en) * 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US7224000B2 (en) * 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
WO2004021461A2 (en) * 2002-08-30 2004-03-11 Gelcore Llc Phosphor-coated led with improved efficiency
US20050218781A1 (en) * 2002-09-09 2005-10-06 Hsing Chen Triple wavelengths light emitting diode
JP4201167B2 (ja) * 2002-09-26 2008-12-24 シチズン電子株式会社 白色発光装置の製造方法
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
JP4280050B2 (ja) 2002-10-07 2009-06-17 シチズン電子株式会社 白色発光装置
CN101925212A (zh) * 2002-10-18 2010-12-22 伊菲雷知识产权公司 彩色电致发光显示器
WO2004040661A2 (de) 2002-10-30 2004-05-13 Osram Opto Semiconductors Gmbh Verfahren zum herstellen einer leuchtdioden-lichtquelle mit lumineszenz-konversionselement
DE10258193B4 (de) 2002-12-12 2014-04-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Leuchtdioden-Lichtquellen mit Lumineszenz-Konversionselement
DE10261428B8 (de) * 2002-12-30 2012-09-20 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiter-Bauelement mit mehrfachen Lumineszenz-Konversionselementen
DE10261672B4 (de) * 2002-12-31 2005-11-24 Osram Opto Semiconductors Gmbh LED-Chip mit Konversionsstoff, optoelektronisches Bauelement mit einem derartigen LED-Chip und Verfahren zum Herstellen eines derartigen LED-Chips
TWI351548B (en) 2003-01-15 2011-11-01 Semiconductor Energy Lab Manufacturing method of liquid crystal display dev
US7042020B2 (en) * 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
US7423296B2 (en) * 2003-02-26 2008-09-09 Avago Technologies Ecbu Ip Pte Ltd Apparatus for producing a spectrally-shifted light output from a light emitting device utilizing thin-film luminescent layers
KR20050113200A (ko) * 2003-02-26 2005-12-01 크리, 인코포레이티드 복합 백색 광원 및 그 제조 방법
DE10308866A1 (de) 2003-02-28 2004-09-09 Osram Opto Semiconductors Gmbh Beleuchtungsmodul und Verfahren zu dessen Herstellung
JP4131178B2 (ja) * 2003-02-28 2008-08-13 豊田合成株式会社 発光装置
US20040173808A1 (en) * 2003-03-07 2004-09-09 Bor-Jen Wu Flip-chip like light emitting device package
TWI246780B (en) * 2003-03-10 2006-01-01 Toyoda Gosei Kk Solid-state component device and manufacturing method thereof
US7038370B2 (en) * 2003-03-17 2006-05-02 Lumileds Lighting, U.S., Llc Phosphor converted light emitting device
US7279832B2 (en) * 2003-04-01 2007-10-09 Innovalight, Inc. Phosphor materials and illumination devices made therefrom
US20040252488A1 (en) * 2003-04-01 2004-12-16 Innovalight Light-emitting ceiling tile
DE10316769A1 (de) * 2003-04-10 2004-10-28 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Leuchtstoffbassierte LED und zugehöriger Leuchtstoff
JP3931916B2 (ja) * 2003-04-24 2007-06-20 日亜化学工業株式会社 半導体装置及びその製造方法
EP2270887B1 (en) * 2003-04-30 2020-01-22 Cree, Inc. High powered light emitter packages with compact optics
US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
US7157745B2 (en) 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
US7633093B2 (en) * 2003-05-05 2009-12-15 Lighting Science Group Corporation Method of making optical light engines with elevated LEDs and resulting product
US7777235B2 (en) 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US7528421B2 (en) * 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US7040774B2 (en) * 2003-05-23 2006-05-09 Goldeneye, Inc. Illumination systems utilizing multiple wavelength light recycling
JP4138586B2 (ja) * 2003-06-13 2008-08-27 スタンレー電気株式会社 光源用ｌｅｄランプおよびこれを用いた車両用前照灯
CN100511732C (zh) 2003-06-18 2009-07-08 丰田合成株式会社 发光器件
AT412928B (de) * 2003-06-18 2005-08-25 Guenther Dipl Ing Dr Leising Verfahren zur herstellung einer weissen led sowie weisse led-lichtquelle
JP4024721B2 (ja) * 2003-06-20 2007-12-19 株式会社小糸製作所 車両用灯具及び光源モジュール
US7521667B2 (en) 2003-06-23 2009-04-21 Advanced Optical Technologies, Llc Intelligent solid state lighting
US7145125B2 (en) 2003-06-23 2006-12-05 Advanced Optical Technologies, Llc Integrating chamber cone light using LED sources
JP2005026688A (ja) * 2003-06-30 2005-01-27 Osram Opto Semiconductors Gmbh 放射放出半導体チップ、該半導体チップの作製方法および該半導体チップの明るさの調整設定方法
US8999736B2 (en) 2003-07-04 2015-04-07 Epistar Corporation Optoelectronic system
US20050006659A1 (en) * 2003-07-09 2005-01-13 Ng Kee Yean Light emitting diode utilizing a discrete wavelength-converting layer for color conversion
DE102004063978B4 (de) * 2003-07-17 2019-01-24 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung
JP4238666B2 (ja) * 2003-07-17 2009-03-18 豊田合成株式会社 発光装置の製造方法
JP4200849B2 (ja) * 2003-07-17 2008-12-24 日産自動車株式会社 車両用赤外線投光器
EP1659335A4 (en) * 2003-08-28 2010-05-05 Mitsubishi Chem Corp LIGHT DISPENSER AND PHOSPHORUS
US7029935B2 (en) * 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
JP2005093712A (ja) * 2003-09-17 2005-04-07 Stanley Electric Co Ltd 半導体発光装置
JP4140042B2 (ja) * 2003-09-17 2008-08-27 スタンレー電気株式会社 蛍光体を用いたｌｅｄ光源装置及びｌｅｄ光源装置を用いた車両前照灯
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP4402425B2 (ja) * 2003-10-24 2010-01-20 スタンレー電気株式会社 車両前照灯
DE10351397A1 (de) * 2003-10-31 2005-06-16 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
DE10351349A1 (de) * 2003-10-31 2005-06-16 Osram Opto Semiconductors Gmbh Verfahren zum Hestellen eines Lumineszenzdiodenchips
US6933535B2 (en) * 2003-10-31 2005-08-23 Lumileds Lighting U.S., Llc Light emitting devices with enhanced luminous efficiency
US20050099808A1 (en) * 2003-11-12 2005-05-12 Cheng Tzu C. Light-emitting device
JP4385741B2 (ja) * 2003-11-25 2009-12-16 パナソニック電工株式会社 発光装置
US7518158B2 (en) 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
JP2005191420A (ja) * 2003-12-26 2005-07-14 Stanley Electric Co Ltd 波長変換層を有する半導体発光装置およびその製造方法
DE10361650A1 (de) * 2003-12-30 2005-08-04 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und Verfahren zu dessen Herstellung
JP2005197329A (ja) * 2004-01-05 2005-07-21 Stanley Electric Co Ltd 表面実装型半導体装置及びそのリードフレーム構造
US7183588B2 (en) * 2004-01-08 2007-02-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emission device
DE102004003928B4 (de) * 2004-01-26 2012-02-23 Tay Kheng Chiong Ein miniaturisiertes mit SM-Technologie bestückbares optoelektronisches Bauelement und Verfahren zur Herstellung dieses Bauelements
US7250715B2 (en) * 2004-02-23 2007-07-31 Philips Lumileds Lighting Company, Llc Wavelength converted semiconductor light emitting devices
JP2005244075A (ja) * 2004-02-27 2005-09-08 Matsushita Electric Works Ltd 発光装置
DE102004029412A1 (de) * 2004-02-27 2005-10-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
JP2005286312A (ja) 2004-03-02 2005-10-13 Fujikura Ltd 発光デバイス及び照明装置
US7573072B2 (en) * 2004-03-10 2009-08-11 Lumination Llc Phosphor and blends thereof for use in LEDs
US7239080B2 (en) * 2004-03-11 2007-07-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd LED display with overlay
US20050199990A1 (en) * 2004-03-15 2005-09-15 Intersil Americas Inc. Protection of plastic detector's packages against shortwave light destruction
KR20050092300A (ko) * 2004-03-15 2005-09-21 삼성전기주식회사 고출력 발광 다이오드 패키지
DE102004013680A1 (de) * 2004-03-18 2005-10-20 Siemens Ag Lichtquelle für Bilderzeugungseinheit
JP4504056B2 (ja) * 2004-03-22 2010-07-14 スタンレー電気株式会社 半導体発光装置の製造方法
TWI286393B (en) * 2004-03-24 2007-09-01 Toshiba Lighting & Technology Lighting apparatus
JP2005285920A (ja) * 2004-03-29 2005-10-13 Stanley Electric Co Ltd Ｌｅｄ
CN1677702A (zh) * 2004-03-29 2005-10-05 斯坦雷电气株式会社 发光二极管
JP2005285925A (ja) * 2004-03-29 2005-10-13 Stanley Electric Co Ltd Ｌｅｄ
US7497581B2 (en) * 2004-03-30 2009-03-03 Goldeneye, Inc. Light recycling illumination systems with wavelength conversion
US7326583B2 (en) 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
JP4229447B2 (ja) * 2004-03-31 2009-02-25 スタンレー電気株式会社 半導体発光装置及び製造方法
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
WO2005097938A1 (ja) * 2004-03-31 2005-10-20 Nippon Electric Glass Co., Ltd. 蛍光体及び発光ダイオード
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
US7514867B2 (en) * 2004-04-19 2009-04-07 Panasonic Corporation LED lamp provided with optical diffusion layer having increased thickness and method of manufacturing thereof
JP4471356B2 (ja) * 2004-04-23 2010-06-02 スタンレー電気株式会社 半導体発光装置
US7837348B2 (en) 2004-05-05 2010-11-23 Rensselaer Polytechnic Institute Lighting system using multiple colored light emitting sources and diffuser element
US7819549B2 (en) * 2004-05-05 2010-10-26 Rensselaer Polytechnic Institute High efficiency light source using solid-state emitter and down-conversion material
US11158768B2 (en) 2004-05-07 2021-10-26 Bruce H. Baretz Vacuum light emitting diode
TWI242893B (en) * 2004-05-07 2005-11-01 Lite On Technology Corp White light-emitting apparatus
US11355676B2 (en) 2004-05-07 2022-06-07 Bruce H. Baretz Light emitting diode
JP4632690B2 (ja) * 2004-05-11 2011-02-16 スタンレー電気株式会社 半導体発光装置とその製造方法
JP3994094B2 (ja) * 2004-05-27 2007-10-17 ローム株式会社 発光ダイオードランプ
DE102004040468B4 (de) * 2004-05-31 2022-02-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Gehäuse-Grundkörper für ein derartiges Bauelement
US8975646B2 (en) 2004-05-31 2015-03-10 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component and housing base for such a component
US8860051B2 (en) 2006-11-15 2014-10-14 The Regents Of The University Of California Textured phosphor conversion layer light emitting diode
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
JP2005353816A (ja) * 2004-06-10 2005-12-22 Olympus Corp 発光デバイス、発光デバイスの製造方法、発光デバイスを用いた照明装置、及び、プロジェクタ
JP4583076B2 (ja) * 2004-06-11 2010-11-17 スタンレー電気株式会社 発光素子
US7048385B2 (en) * 2004-06-16 2006-05-23 Goldeneye, Inc. Projection display systems utilizing color scrolling and light emitting diodes
WO2005124877A2 (en) * 2004-06-18 2005-12-29 Philips Intellectual Property & Standards Gmbh Led with improve light emittance profile
JP4632697B2 (ja) * 2004-06-18 2011-02-16 スタンレー電気株式会社 半導体発光素子及びその製造方法
DE102004031732A1 (de) * 2004-06-30 2006-01-19 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip mit einem Strahlformungselement und Strahlformungselement
US20060023463A1 (en) * 2004-07-12 2006-02-02 Goodrich Hella Aerospace Lighting Systems Gmbh Reading lamp for a vehicle
EP1616754A1 (de) * 2004-07-12 2006-01-18 Goodrich Hella Aerospace Lighting Systems GmbH Leseleuchte für ein Fahrzeug
JP2008521211A (ja) 2004-07-24 2008-06-19 ヨン ラグ ト 二次元ナノ周期構造体を有する薄膜蛍光体を備えるｌｅｄ装置
JP4599111B2 (ja) * 2004-07-30 2010-12-15 スタンレー電気株式会社 灯具光源用ｌｅｄランプ
JP4858867B2 (ja) * 2004-08-09 2012-01-18 スタンレー電気株式会社 Ｌｅｄ及びその製造方法
US7750352B2 (en) * 2004-08-10 2010-07-06 Pinion Technologies, Inc. Light strips for lighting and backlighting applications
JP4547569B2 (ja) * 2004-08-31 2010-09-22 スタンレー電気株式会社 表面実装型ｌｅｄ
KR101217659B1 (ko) * 2004-09-03 2013-01-02 스탠리 일렉트릭 컴퍼니, 리미티드 Ｅｌ소자
JP4747726B2 (ja) * 2004-09-09 2011-08-17 豊田合成株式会社 発光装置
CA2579196C (en) * 2004-09-10 2010-06-22 Color Kinetics Incorporated Lighting zone control methods and apparatus
US7256057B2 (en) * 2004-09-11 2007-08-14 3M Innovative Properties Company Methods for producing phosphor based light sources
US7217583B2 (en) * 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US8174037B2 (en) * 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
EP1794814A1 (en) * 2004-09-23 2007-06-13 Koninklijke Philips Electronics N.V. Light-emitting device
JP4922555B2 (ja) * 2004-09-24 2012-04-25 スタンレー電気株式会社 Ｌｅｄ装置
US7352124B2 (en) * 2004-09-28 2008-04-01 Goldeneye, Inc. Light recycling illumination systems utilizing light emitting diodes
US7352006B2 (en) * 2004-09-28 2008-04-01 Goldeneye, Inc. Light emitting diodes exhibiting both high reflectivity and high light extraction
JP4756841B2 (ja) * 2004-09-29 2011-08-24 スタンレー電気株式会社 半導体発光装置の製造方法
DE102004048041B4 (de) * 2004-09-29 2013-03-07 Schott Ag Verwendung eines Glases oder einer Glaskeramik zur Lichtwellenkonversion
DE102004047727B4 (de) * 2004-09-30 2018-01-18 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer Konverterschicht und Verfahren zur Herstellung eines Lumineszenzdiodenchips mit einer Konverterschicht
DE102004060358A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Lumineszenzdiodenchips und Lumineszenzdiodenchip
DE102004047640A1 (de) * 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Gehäuse für ein optoelektronisches Bauelement
DE102005046420B4 (de) * 2004-10-04 2019-07-11 Stanley Electric Co. Ltd. Verfahren zur Herstellung einer Licht emittierenden Halbleitervorrichtung
US20060097385A1 (en) * 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
JP4627177B2 (ja) * 2004-11-10 2011-02-09 スタンレー電気株式会社 Ｌｅｄの製造方法
JP2006140281A (ja) * 2004-11-11 2006-06-01 Stanley Electric Co Ltd パワーｌｅｄ及びその製造方法
JP2006140362A (ja) * 2004-11-15 2006-06-01 Nitto Denko Corp 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法
US7255789B2 (en) * 2004-12-13 2007-08-14 Fite Jr Robert D Method and apparatus for liquid purification
DE102004060476A1 (de) 2004-12-16 2006-07-06 Hella Kgaa Hueck & Co. Scheinwerfer für Fahrzeuge
DE102004060475A1 (de) * 2004-12-16 2006-07-06 Hella Kgaa Hueck & Co. Scheinwerfer für Fahrzeuge
KR100580753B1 (ko) * 2004-12-17 2006-05-15 엘지이노텍 주식회사 발광소자 패키지
US7322732B2 (en) * 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
JP4401348B2 (ja) 2004-12-28 2010-01-20 シャープ株式会社 発光デバイスならびにそれを用いた照明機器および表示機器
JP2006190888A (ja) * 2005-01-07 2006-07-20 Stanley Electric Co Ltd 表面実装型ｌｅｄ
US8125137B2 (en) * 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7564180B2 (en) 2005-01-10 2009-07-21 Cree, Inc. Light emission device and method utilizing multiple emitters and multiple phosphors
US7304694B2 (en) * 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
TWI352437B (en) 2007-08-27 2011-11-11 Epistar Corp Optoelectronic semiconductor device
DE102006002275A1 (de) 2005-01-19 2006-07-20 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
KR101176861B1 (ko) * 2005-01-26 2012-08-23 삼성전자주식회사 발광재료 및 그 제조방법
US7939842B2 (en) * 2005-01-27 2011-05-10 Cree, Inc. Light emitting device packages, light emitting diode (LED) packages and related methods
DE102005041065A1 (de) 2005-02-16 2006-08-24 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Beleuchtungseinrichtung
DE102005019375A1 (de) 2005-02-28 2006-09-07 Osram Opto Semiconductors Gmbh LED-Array
EP1854863A4 (en) * 2005-02-28 2012-02-22 Mitsubishi Chem Corp LUMINOPHORE, PROCESS FOR PRODUCING THE SAME, AND APPLICATION
KR100593933B1 (ko) * 2005-03-18 2006-06-30 삼성전기주식회사 산란 영역을 갖는 측면 방출형 발광다이오드 패키지 및이를 포함하는 백라이트 장치
JP2006261540A (ja) * 2005-03-18 2006-09-28 Stanley Electric Co Ltd 発光デバイス
JP5085851B2 (ja) * 2005-03-22 2012-11-28 京セラ株式会社 発光装置および照明装置
US20060228973A1 (en) * 2005-04-11 2006-10-12 Jlj, Inc. LED Light Strings
JP2008538652A (ja) * 2005-04-20 2008-10-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ セラミック発光コンバーターを含む照明システム
DE102005019376A1 (de) * 2005-04-26 2006-11-02 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Lumineszenzkonversions-LED
KR101047683B1 (ko) * 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
JP2007049114A (ja) * 2005-05-30 2007-02-22 Sharp Corp 発光装置とその製造方法
US7753553B2 (en) 2005-06-02 2010-07-13 Koniklijke Philips Electronics N.V. Illumination system comprising color deficiency compensating luminescent material
US8718437B2 (en) 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US9297092B2 (en) 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2006131924A2 (en) 2005-06-07 2006-12-14 Oree, Advanced Illumination Solutions Inc. Illumination apparatus
US8272758B2 (en) * 2005-06-07 2012-09-25 Oree, Inc. Illumination apparatus and methods of forming the same
US8215815B2 (en) * 2005-06-07 2012-07-10 Oree, Inc. Illumination apparatus and methods of forming the same
US7319246B2 (en) * 2005-06-23 2008-01-15 Lumination Llc Luminescent sheet covering for LEDs
KR101266130B1 (ko) * 2005-06-23 2013-05-27 렌슬러 폴리테크닉 인스티튜트 단파장 ｌｅｄ들 및 다운-컨버젼 물질들로 백색광을생성하기 위한 패키지 설계
KR100646634B1 (ko) * 2005-06-24 2006-11-23 서울옵토디바이스주식회사 발광 다이오드
DE102005030761A1 (de) * 2005-07-01 2007-01-04 Carl Zeiss Jena Gmbh Beleuchtungseinrichtung für Mikroskope
KR101106134B1 (ko) 2005-07-11 2012-01-20 서울옵토디바이스주식회사 나노와이어 형광체를 채택한 발광소자
JPWO2007018039A1 (ja) * 2005-08-05 2009-02-19 パナソニック株式会社 半導体発光装置
GB2466892B (en) * 2005-08-12 2011-02-23 Avago Tech Ecbu Ip Phosphor-converted LED devices having improved light distribution uniformity
US7329907B2 (en) 2005-08-12 2008-02-12 Avago Technologies, Ecbu Ip Pte Ltd Phosphor-converted LED devices having improved light distribution uniformity
JP2009506527A (ja) * 2005-08-24 2009-02-12 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ カラー変換器を備えた発光ダイオードおよびレーザーダイオードのための電気接触システム
US7586245B2 (en) * 2005-08-29 2009-09-08 Osram Opto Semiconductors Gmbh Using prismatic microstructured films for image blending in OLEDS
DE102006020529A1 (de) * 2005-08-30 2007-03-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2007067184A (ja) * 2005-08-31 2007-03-15 Showa Denko Kk Ｌｅｄパッケージ
US20070052342A1 (en) * 2005-09-01 2007-03-08 Sharp Kabushiki Kaisha Light-emitting device
DE102005046450A1 (de) 2005-09-28 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Verfahren zu dessen Herstellung und optoelektronisches Bauteil
DE102005062514A1 (de) 2005-09-28 2007-03-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2007096079A (ja) * 2005-09-29 2007-04-12 Stanley Electric Co Ltd 半導体発光装置
US7473019B2 (en) 2005-09-29 2009-01-06 Osram Opto Semiconductors Gmbh Lighting apparatus
DK1934652T3 (da) * 2005-10-04 2012-06-11 Koninkl Philips Electronics Nv Laserprojektionssystem baseret på en luminescensskærm
EP1935040A1 (en) * 2005-10-05 2008-06-25 Philips Intellectual Property & Standards GmbH Phosphor-converted electroluminescent device with absorbing filter
DE102005049685A1 (de) 2005-10-14 2007-04-19 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Multifunktions-Kfz-Scheinwerfermodul insbesondere für den Frontbereich eines Fahrzeugs
US7378686B2 (en) * 2005-10-18 2008-05-27 Goldeneye, Inc. Light emitting diode and side emitting lens
US7765792B2 (en) 2005-10-21 2010-08-03 Honeywell International Inc. System for particulate matter sensor signal processing
KR100936262B1 (ko) 2005-10-21 2010-01-12 주식회사 엘지화학 신규한 구조의 전기 접속용 버스 바 및 그것을 포함하고있는 전지모듈
US8330348B2 (en) * 2005-10-31 2012-12-11 Osram Opto Semiconductors Gmbh Structured luminescence conversion layer
US7420323B2 (en) * 2005-10-31 2008-09-02 Osram Opto Semiconductors Gmbh Electroluminescent apparatus having a structured luminescence conversion layer
US7321193B2 (en) * 2005-10-31 2008-01-22 Osram Opto Semiconductors Gmbh Device structure for OLED light device having multi element light extraction and luminescence conversion layer
JP5209177B2 (ja) * 2005-11-14 2013-06-12 新光電気工業株式会社 半導体装置および半導体装置の製造方法
EP1948994B1 (en) * 2005-11-18 2012-09-19 Cree, Inc. Tile for solid state lighting panel
US7926300B2 (en) 2005-11-18 2011-04-19 Cree, Inc. Adaptive adjustment of light output of solid state lighting panels
EP1949765B1 (en) * 2005-11-18 2017-07-12 Cree, Inc. Solid state lighting panels with variable voltage boost current sources
US8514210B2 (en) 2005-11-18 2013-08-20 Cree, Inc. Systems and methods for calibrating solid state lighting panels using combined light output measurements
KR101200400B1 (ko) * 2005-12-01 2012-11-16 삼성전자주식회사 백색 발광 다이오드
KR100943833B1 (ko) 2005-12-02 2010-02-24 주식회사 엘지화학 중대형 전지팩용 카트리지
US20070131940A1 (en) * 2005-12-08 2007-06-14 Unity Opto Technology Co., Ltd. Color-mixing LED
DE102006033893B4 (de) 2005-12-16 2017-02-23 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
US7768192B2 (en) 2005-12-21 2010-08-03 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
CN101460779A (zh) 2005-12-21 2009-06-17 科锐Led照明技术公司 照明装置
US7614759B2 (en) * 2005-12-22 2009-11-10 Cree Led Lighting Solutions, Inc. Lighting device
US7659544B2 (en) * 2005-12-23 2010-02-09 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Light emitting device with at least two alternately driven light emitting diodes
JP2007180203A (ja) * 2005-12-27 2007-07-12 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
US8264138B2 (en) * 2006-01-20 2012-09-11 Cree, Inc. Shifting spectral content in solid state light emitters by spatially separating lumiphor films
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
US20070205423A1 (en) * 2006-03-03 2007-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2009529232A (ja) * 2006-03-06 2009-08-13 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光ダイオードモジュール
US7737634B2 (en) 2006-03-06 2010-06-15 Avago Technologies General Ip (Singapore) Pte. Ltd. LED devices having improved containment for liquid encapsulant
US7994530B2 (en) * 2006-03-06 2011-08-09 Koninklijke Philips Electronics N.V. Light emitting diode module
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
EP2041478B1 (en) 2006-03-07 2014-08-06 QD Vision, Inc. An article including semiconductor nanocrystals
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
DE102006011453A1 (de) * 2006-03-13 2007-09-20 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Hochbeständiges Kunststoffbauteil, das zur Lumineszent geeignet ist
KR100746749B1 (ko) * 2006-03-15 2007-08-09 (주)케이디티 광 여기 시트
KR100714630B1 (ko) * 2006-03-17 2007-05-07 삼성전기주식회사 압력인가에 의한 파장변환형 발광 소자
US8969908B2 (en) 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
US20070241661A1 (en) * 2006-04-12 2007-10-18 Yin Chua B High light output lamps having a phosphor embedded glass/ceramic layer
US7821194B2 (en) 2006-04-18 2010-10-26 Cree, Inc. Solid state lighting devices including light mixtures
US8513875B2 (en) 2006-04-18 2013-08-20 Cree, Inc. Lighting device and lighting method
EP2052589A4 (en) 2006-04-18 2012-09-19 Cree Inc LIGHTING DEVICE AND METHOD
US9084328B2 (en) * 2006-12-01 2015-07-14 Cree, Inc. Lighting device and lighting method
US7997745B2 (en) 2006-04-20 2011-08-16 Cree, Inc. Lighting device and lighting method
US8547002B2 (en) * 2006-05-02 2013-10-01 Switch Bulb Company, Inc. Heat removal design for LED bulbs
EP2013919A2 (en) 2006-05-02 2009-01-14 Superbulbs, Inc. Method of light dispersion and preferential scattering of certain wavelengths of light for light-emitting diodes and bulbs constructed therefrom
WO2007125493A2 (en) * 2006-05-02 2007-11-08 Koninklijke Philips Electronics N.V. Color-stable phosphor converted led
BRPI0711150A2 (pt) * 2006-05-02 2011-08-23 Superbulbs Inc bulbo de led de plástico
WO2007130536A2 (en) 2006-05-05 2007-11-15 Cree Led Lighting Solutions, Inc. Lighting device
US7755282B2 (en) * 2006-05-12 2010-07-13 Edison Opto Corporation LED structure and fabricating method for the same
WO2007135707A1 (ja) 2006-05-18 2007-11-29 Nichia Corporation 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法
DE102006024165A1 (de) 2006-05-23 2007-11-29 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips
US8033692B2 (en) * 2006-05-23 2011-10-11 Cree, Inc. Lighting device
WO2007139894A2 (en) 2006-05-26 2007-12-06 Cree Led Lighting Solutions, Inc. Solid state light emitting device and method of making same
US8596819B2 (en) * 2006-05-31 2013-12-03 Cree, Inc. Lighting device and method of lighting
CN101454613A (zh) * 2006-05-31 2009-06-10 科锐Led照明科技公司 具有颜色控制的照明装置及其照明方法
WO2007141688A1 (en) * 2006-06-02 2007-12-13 Philips Intellectual Property & Standards Gmbh Colored and white light generating lighting device
KR100809263B1 (ko) * 2006-07-10 2008-02-29 삼성전기주식회사 직하 방식 백라이트 장치
US8044418B2 (en) * 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
US7960819B2 (en) * 2006-07-13 2011-06-14 Cree, Inc. Leadframe-based packages for solid state emitting devices
US7503676B2 (en) 2006-07-26 2009-03-17 Kyocera Corporation Light-emitting device and illuminating apparatus
JP4520437B2 (ja) * 2006-07-26 2010-08-04 信越化学工業株式会社 Ｌｅｄ用蛍光物質入り硬化性シリコーン組成物およびその組成物を使用するｌｅｄ発光装置。
US7943952B2 (en) * 2006-07-31 2011-05-17 Cree, Inc. Method of uniform phosphor chip coating and LED package fabricated using method
CN101513120A (zh) * 2006-08-03 2009-08-19 英特曼帝克司公司 包含发光磷光体的发光二极管照明布置
US20080029720A1 (en) * 2006-08-03 2008-02-07 Intematix Corporation LED lighting arrangement including light emitting phosphor
JP4957110B2 (ja) * 2006-08-03 2012-06-20 日亜化学工業株式会社 発光装置
JP2010500747A (ja) * 2006-08-08 2010-01-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ナノ粒子をベースとする無機結合材料
US7703942B2 (en) * 2006-08-31 2010-04-27 Rensselaer Polytechnic Institute High-efficient light engines using light emitting diodes
US7910938B2 (en) * 2006-09-01 2011-03-22 Cree, Inc. Encapsulant profile for light emitting diodes
US7842960B2 (en) * 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
KR100851605B1 (ko) * 2006-09-06 2008-08-12 목산전자주식회사 화이트 엘이디의 제조방법
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
DE102007021009A1 (de) * 2006-09-27 2008-04-10 Osram Opto Semiconductors Gmbh Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen
DE102006045704A1 (de) * 2006-09-27 2008-04-03 Osram Opto Semiconductors Gmbh Optisches Element und optoelektronisches Bauelement mit solch einem optischen Element
KR100885894B1 (ko) * 2006-09-29 2009-02-26 폴리트론 테크놀로지스 인크 Ｌｅｄ 발광 장치의 플래인 구조체
DE102006051746A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer Lumineszenzkonversionsschicht
WO2008042351A2 (en) 2006-10-02 2008-04-10 Illumitex, Inc. Led system and method
US9018619B2 (en) 2006-10-09 2015-04-28 Cree, Inc. Quantum wells for light conversion
KR20090082449A (ko) * 2006-10-31 2009-07-30 티아이알 테크놀로지 엘피 광원
US7808013B2 (en) * 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
JP2007027801A (ja) * 2006-11-01 2007-02-01 Sanyo Electric Co Ltd Ｌｅｄ表示器及びその製造方法
JP2008115223A (ja) * 2006-11-01 2008-05-22 Nec Lighting Ltd 蛍光体含有ガラスシート、その製造方法及び発光装置
US8029155B2 (en) 2006-11-07 2011-10-04 Cree, Inc. Lighting device and lighting method
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
TWI496315B (zh) * 2006-11-13 2015-08-11 Cree Inc 照明裝置、被照明的殼體及照明方法
US7889421B2 (en) 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
DE102007056270B4 (de) * 2006-11-24 2015-11-26 Osram Gmbh Beleuchtungseinheit mit einer LED-Lichtquelle
JP5367218B2 (ja) 2006-11-24 2013-12-11 シャープ株式会社 蛍光体の製造方法および発光装置の製造方法
DE202006017924U1 (de) 2006-11-24 2008-03-27 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Beleuchtungseinheit mit einer LED-Lichtquelle
US20080121911A1 (en) * 2006-11-28 2008-05-29 Cree, Inc. Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same
US9441793B2 (en) 2006-12-01 2016-09-13 Cree, Inc. High efficiency lighting device including one or more solid state light emitters, and method of lighting
WO2008073794A1 (en) 2006-12-07 2008-06-19 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
WO2008073400A1 (en) 2006-12-11 2008-06-19 The Regents Of The University Of California Transparent light emitting diodes
US9178121B2 (en) 2006-12-15 2015-11-03 Cree, Inc. Reflective mounting substrates for light emitting diodes
US20080149166A1 (en) * 2006-12-21 2008-06-26 Goldeneye, Inc. Compact light conversion device and light source with high thermal conductivity wavelength conversion material
US8221690B2 (en) 2007-10-30 2012-07-17 The Invention Science Fund I, Llc Systems and devices that utilize photolyzable nitric oxide donors
US7975699B2 (en) 2007-10-30 2011-07-12 The Invention Science Fund I, Llc Condoms configured to facilitate release of nitric oxide
US7862598B2 (en) 2007-10-30 2011-01-04 The Invention Science Fund I, Llc Devices and systems that deliver nitric oxide
US8642093B2 (en) 2007-10-30 2014-02-04 The Invention Science Fund I, Llc Methods and systems for use of photolyzable nitric oxide donors
US8836212B2 (en) 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9196799B2 (en) 2007-01-22 2015-11-24 Cree, Inc. LED chips having fluorescent substrates with microholes and methods for fabricating
US8232564B2 (en) * 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8456388B2 (en) * 2007-02-14 2013-06-04 Cree, Inc. Systems and methods for split processor control in a solid state lighting panel
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
US20080198572A1 (en) 2007-02-21 2008-08-21 Medendorp Nicholas W LED lighting systems including luminescent layers on remote reflectors
KR101499269B1 (ko) * 2007-02-22 2015-03-09 크리, 인코포레이티드 발광 장치, 발광 방법, 광 필터 및 광 필터링 방법
JP5013905B2 (ja) 2007-02-28 2012-08-29 スタンレー電気株式会社 半導体発光装置
TWI326923B (en) * 2007-03-07 2010-07-01 Lite On Technology Corp White light emitting diode
DE102007017855A1 (de) 2007-04-16 2008-10-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
US20080258130A1 (en) * 2007-04-23 2008-10-23 Bergmann Michael J Beveled LED Chip with Transparent Substrate
EP1988583B1 (en) * 2007-04-30 2016-10-12 Tridonic Jennersdorf GmbH Light emitting diode module with colour conversion layer designed for a homogenous colour distribution
EP1987762A1 (de) 2007-05-03 2008-11-05 F.Hoffmann-La Roche Ag Oximeter
WO2008137983A1 (en) 2007-05-08 2008-11-13 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
WO2008137977A1 (en) 2007-05-08 2008-11-13 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
WO2008137974A1 (en) 2007-05-08 2008-11-13 Cree Led Lighting Solutions, Inc. Lighting device and lighting method
TWI422785B (zh) * 2007-05-08 2014-01-11 Cree Inc 照明裝置及照明方法
CN101711325B (zh) * 2007-05-08 2013-07-10 科锐公司 照明装置和照明方法
US7781779B2 (en) * 2007-05-08 2010-08-24 Luminus Devices, Inc. Light emitting devices including wavelength converting material
US7712917B2 (en) 2007-05-21 2010-05-11 Cree, Inc. Solid state lighting panels with limited color gamut and methods of limiting color gamut in solid state lighting panels
JP4656090B2 (ja) * 2007-05-31 2011-03-23 三菱化学株式会社 発光素子並びにこれを用いた画像表示装置及び照明装置
US20100219734A1 (en) * 2007-06-08 2010-09-02 Superbulbs, Inc. Apparatus for cooling leds in a bulb
US7942556B2 (en) * 2007-06-18 2011-05-17 Xicato, Inc. Solid state illumination device
JP5773646B2 (ja) 2007-06-25 2015-09-02 キユーデイー・ビジヨン・インコーポレーテツド ナノ材料を被着させることを含む組成物および方法
US7682524B2 (en) * 2007-06-27 2010-03-23 National Central University Phosphor for producing white light under excitation of UV light and method for making the same
US10505083B2 (en) * 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
TWI347687B (en) * 2007-07-13 2011-08-21 Lite On Technology Corp Light-emitting device with open-loop control
JP2009019163A (ja) * 2007-07-13 2009-01-29 Sharp Corp 発光装置用蛍光体粒子集合体、発光装置、および液晶表示用バックライト装置
US20090023234A1 (en) * 2007-07-17 2009-01-22 Hung-Tsung Hsu Method for manufacturing light emitting diode package
US8791631B2 (en) 2007-07-19 2014-07-29 Quarkstar Llc Light emitting device
WO2009011205A1 (ja) 2007-07-19 2009-01-22 Sharp Kabushiki Kaisha 発光装置
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US20090033612A1 (en) * 2007-07-31 2009-02-05 Roberts John K Correction of temperature induced color drift in solid state lighting displays
US20090039375A1 (en) * 2007-08-07 2009-02-12 Cree, Inc. Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US8829820B2 (en) * 2007-08-10 2014-09-09 Cree, Inc. Systems and methods for protecting display components from adverse operating conditions
US8128249B2 (en) 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
JP2007324630A (ja) * 2007-09-10 2007-12-13 Matsushita Electric Ind Co Ltd 半導体発光装置
DE102007043181A1 (de) 2007-09-11 2009-03-12 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102007043183A1 (de) 2007-09-11 2009-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines solchen
DE102007049005A1 (de) * 2007-09-11 2009-03-12 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE202007019100U1 (de) 2007-09-12 2010-09-02 Lumitech Produktion Und Entwicklung Gmbh LED-Modul, LED-Leuchtmittel und LED-Leuchte für die energieeffiziente Wiedergabe von weißem Licht
US8450927B2 (en) 2007-09-14 2013-05-28 Switch Bulb Company, Inc. Phosphor-containing LED light bulb
DE102007050876A1 (de) 2007-09-26 2009-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102007053067A1 (de) 2007-09-26 2009-04-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement
DE102007046348A1 (de) 2007-09-27 2009-04-02 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement mit Glasabdeckung und Verfahren zu dessen Herstellung
DE102007046611A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Lichtquelle mit Konversionselement und Lichtwellenleiter, Verfahren zur Herstellung der Lichtquelle und deren Verwendung
DE102007057710B4 (de) 2007-09-28 2024-03-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Bauelement mit Konversionselement
TWM329244U (en) * 2007-10-01 2008-03-21 Everlight Electronics Co Ltd Light emitting diode device
US8439528B2 (en) 2007-10-03 2013-05-14 Switch Bulb Company, Inc. Glass LED light bulbs
WO2009049019A1 (en) * 2007-10-10 2009-04-16 Cree Led Lighting Solutions, Inc. Lighting device and method of making
US9086213B2 (en) * 2007-10-17 2015-07-21 Xicato, Inc. Illumination device with light emitting diodes
US7984999B2 (en) * 2007-10-17 2011-07-26 Xicato, Inc. Illumination device with light emitting diodes and moveable light adjustment member
GB2453953A (en) * 2007-10-23 2009-04-29 Univ Brunel Protection of plastics using UV-absorbing phosphors
DE102007050608A1 (de) * 2007-10-23 2009-04-30 Infineon Technologies Ag Gehäuse für einen Halbleiter-Chip
KR20100110770A (ko) 2007-10-24 2010-10-13 슈퍼불브스, 인크. Ｌｅｄ 광원용 확산기
WO2009055079A1 (en) * 2007-10-26 2009-04-30 Cree Led Lighting Solutions, Inc. Illumination device having one or more lumiphors, and methods of fabricating same
US8349262B2 (en) 2007-10-30 2013-01-08 The Invention Science Fund I, Llc Nitric oxide permeable housings
US8980332B2 (en) 2007-10-30 2015-03-17 The Invention Science Fund I, Llc Methods and systems for use of photolyzable nitric oxide donors
US7897399B2 (en) 2007-10-30 2011-03-01 The Invention Science Fund I, Llc Nitric oxide sensors and systems
US10080823B2 (en) 2007-10-30 2018-09-25 Gearbox Llc Substrates for nitric oxide releasing devices
US8877508B2 (en) 2007-10-30 2014-11-04 The Invention Science Fund I, Llc Devices and systems that deliver nitric oxide
US8376577B2 (en) * 2007-11-05 2013-02-19 Xicato, Inc. Modular solid state lighting device
US8018139B2 (en) * 2007-11-05 2011-09-13 Enertron, Inc. Light source and method of controlling light spectrum of an LED light engine
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
US8119028B2 (en) * 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
US8866410B2 (en) 2007-11-28 2014-10-21 Cree, Inc. Solid state lighting devices and methods of manufacturing the same
DE102007057812A1 (de) * 2007-11-30 2009-06-25 Schott Ag Lichtemittierende Vorrichtung und Verfahren zu deren Herstellung sowie Lichtkonverter und dessen Verwendung
TWI374556B (en) * 2007-12-12 2012-10-11 Au Optronics Corp White light emitting device and producing method thereof
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8823630B2 (en) * 2007-12-18 2014-09-02 Cree, Inc. Systems and methods for providing color management control in a lighting panel
US8172447B2 (en) * 2007-12-19 2012-05-08 Oree, Inc. Discrete lighting elements and planar assembly thereof
US8182128B2 (en) * 2007-12-19 2012-05-22 Oree, Inc. Planar white illumination apparatus
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US20090309114A1 (en) * 2008-01-16 2009-12-17 Luminus Devices, Inc. Wavelength converting light-emitting devices and methods of making the same
CN101487581A (zh) * 2008-01-17 2009-07-22 富士迈半导体精密工业（上海）有限公司 发光二极管光源模组
US8040070B2 (en) 2008-01-23 2011-10-18 Cree, Inc. Frequency converted dimming signal generation
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
WO2009100358A1 (en) 2008-02-08 2009-08-13 Illumitex, Inc. System and method for emitter layer shaping
DE202008005509U1 (de) * 2008-02-26 2009-07-09 Ledon Lighting Jennersdorf Gmbh LED-Modul mit anwendungsspezifischer Farbeinstellung
EP2260341A2 (en) * 2008-03-05 2010-12-15 Oree, Advanced Illumination Solutions INC. Illumination apparatus and methods of forming the same
US8637883B2 (en) 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
DE102008019667A1 (de) * 2008-04-18 2009-10-22 Ledon Lighting Jennersdorf Gmbh LED-Modul mit einer Plattform mit einer Zentralausnehmung
DE102009018603B9 (de) 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
DE102008020882A1 (de) * 2008-04-25 2009-10-29 Ledon Lighting Jennersdorf Gmbh Lichtemittierende Vorrichtung und Verfahren zur Bereitstellung einer lichtemittierenden Vorrichtung mit vordefinierten optischen Eigenschaften des emittierten Lichts
DE102008021436A1 (de) * 2008-04-29 2010-05-20 Schott Ag Optik-Konverter-System für (W)LEDs
DE102008021666A1 (de) * 2008-04-30 2009-11-05 Ledon Lighting Jennersdorf Gmbh Lichtemittierende Vorrichtung und Verfahren zur Herstellung einer lichtemittierenden Vorrichtung
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
JP2011524064A (ja) 2008-05-06 2011-08-25 キユーデイー・ビジヨン・インコーポレーテツド 量子閉じ込め半導体ナノ粒子を含有する固体照明装置
DE102008022542A1 (de) 2008-05-07 2009-11-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
JP2008187212A (ja) * 2008-05-07 2008-08-14 Sharp Corp 面実装型発光素子
KR101431711B1 (ko) * 2008-05-07 2014-08-21 삼성전자 주식회사 발광 장치 및 발광 시스템의 제조 방법, 상기 방법을이용하여 제조한 발광 장치 및 발광 시스템
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
WO2009143283A1 (en) * 2008-05-20 2009-11-26 Lightscape Materials, Inc. Silicate-based phosphors and led lighting devices using the same
JP2010526425A (ja) * 2008-05-20 2010-07-29 パナソニック株式会社 半導体発光装置、並びに、これを用いた光源装置及び照明システム
JP5190680B2 (ja) * 2008-05-26 2013-04-24 日本電気硝子株式会社 発光色変換部材
JP2008208380A (ja) * 2008-05-26 2008-09-11 Nippon Electric Glass Co Ltd 発光色変換部材
DE102008025756B4 (de) * 2008-05-29 2023-02-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiteranordnung
US7868340B2 (en) 2008-05-30 2011-01-11 Bridgelux, Inc. Method and apparatus for generating white light from solid state light emitting devices
JP5152502B2 (ja) * 2008-06-09 2013-02-27 スタンレー電気株式会社 灯具
TWI384649B (zh) * 2008-06-18 2013-02-01 Harvatek Corp Light emitting diode chip encapsulation structure with embedded electrostatic protection function and its making method
US8240875B2 (en) 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
DE102008032299B4 (de) 2008-07-09 2021-12-02 Osram Gmbh Verfahren zur Herstellung eines Granat-Leuchtstoffs
US8297786B2 (en) 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
US8301002B2 (en) * 2008-07-10 2012-10-30 Oree, Inc. Slim waveguide coupling apparatus and method
DE102008033394B4 (de) 2008-07-16 2018-01-25 Osram Oled Gmbh Bauteil mit einem ersten und einem zweiten Substrat
WO2010017523A1 (en) * 2008-08-08 2010-02-11 Xicato, Inc. Color tunable light source
US8471445B2 (en) 2008-08-18 2013-06-25 Switch Bulb Company, Inc. Anti-reflective coatings for light bulbs
DE102008038249A1 (de) 2008-08-18 2010-02-25 Osram Gesellschaft mit beschränkter Haftung alpha-Sialon-Leuchtstoff
US20110204777A1 (en) * 2008-08-18 2011-08-25 Switch Bulb Company, Inc. Settable light bulbs
KR20100030470A (ko) * 2008-09-10 2010-03-18 삼성전자주식회사 다양한 색 온도의 백색광을 제공할 수 있는 발광 장치 및 발광 시스템
WO2010030332A1 (en) * 2008-09-11 2010-03-18 Superbulbs, Inc. End-of-life bulb circuitry
CN101684914B (zh) * 2008-09-23 2011-11-30 北京京东方光电科技有限公司 背光源灯组
WO2010035176A1 (en) * 2008-09-23 2010-04-01 Koninklijke Philips Electronics N.V. Illumination device with electrical variable scattering element
US8058664B2 (en) 2008-09-26 2011-11-15 Bridgelux, Inc. Transparent solder mask LED assembly
US20100078661A1 (en) * 2008-09-26 2010-04-01 Wei Shi Machined surface led assembly
US7887384B2 (en) * 2008-09-26 2011-02-15 Bridgelux, Inc. Transparent ring LED assembly
US9252336B2 (en) * 2008-09-26 2016-02-02 Bridgelux, Inc. Multi-cup LED assembly
US8049236B2 (en) * 2008-09-26 2011-11-01 Bridgelux, Inc. Non-global solder mask LED assembly
DE102008050643B4 (de) * 2008-10-07 2022-11-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtmittel
US20100098377A1 (en) * 2008-10-16 2010-04-22 Noam Meir Light confinement using diffusers
US8287346B2 (en) * 2008-11-03 2012-10-16 Cfph, Llc Late game series information change
WO2010044866A1 (en) 2008-10-16 2010-04-22 Superbulbs, Inc. White ac led
DE102008052751A1 (de) 2008-10-22 2010-04-29 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines Lumineszenzkonversionselements, Lumineszenzkonversionselement und optoelektronisches Bauteil
US20100109025A1 (en) * 2008-11-05 2010-05-06 Koninklijke Philips Electronics N.V. Over the mold phosphor lens for an led
JP5381024B2 (ja) 2008-11-06 2014-01-08 株式会社Ｇｓユアサ リチウム二次電池用正極及びリチウム二次電池
US20100119839A1 (en) * 2008-11-13 2010-05-13 Maven Optronics Corp. System and Method for Forming a Thin-Film Phosphor Layer for Phosphor-Converted Light Emitting Devices
JP4868427B2 (ja) * 2008-11-13 2012-02-01 国立大学法人名古屋大学 半導体発光装置
US9464225B2 (en) 2008-11-17 2016-10-11 Cree, Inc. Luminescent particles, methods of identifying same and light emitting devices including the same
US8287759B2 (en) 2009-05-15 2012-10-16 Cree, Inc. Luminescent particles, methods and light emitting devices including the same
DE102008057720A1 (de) * 2008-11-17 2010-05-20 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
US8220971B2 (en) 2008-11-21 2012-07-17 Xicato, Inc. Light emitting diode module with three part color matching
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP5368809B2 (ja) * 2009-01-19 2013-12-18 ローム株式会社 Ｌｅｄモジュールの製造方法およびｌｅｄモジュール
US20100208470A1 (en) * 2009-02-10 2010-08-19 Yosi Shani Overlapping illumination surfaces with reduced linear artifacts
KR100993045B1 (ko) * 2009-10-23 2010-11-08 엘지이노텍 주식회사 발광소자 칩 및 발광소자 패키지
JP5680278B2 (ja) * 2009-02-13 2015-03-04 シャープ株式会社 発光装置
JP4873024B2 (ja) * 2009-02-23 2012-02-08 ウシオ電機株式会社 光源装置
KR20100096374A (ko) * 2009-02-24 2010-09-02 삼성엘이디 주식회사 발광장치용 봉지재료 및 이를 이용한 발광장치
US20100247893A1 (en) * 2009-03-25 2010-09-30 Goldeneye, Inc. High quality luminescent materials for solid state lighting applications
US8624527B1 (en) 2009-03-27 2014-01-07 Oree, Inc. Independently controllable illumination device
WO2010116294A1 (en) 2009-04-06 2010-10-14 Koninklijke Philips Electronics N.V. Luminescent converter for a phosphor- enhanced light source comprising organic and inorganic phosphors
DE102009019161A1 (de) 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
US8328406B2 (en) * 2009-05-13 2012-12-11 Oree, Inc. Low-profile illumination device
US8337030B2 (en) 2009-05-13 2012-12-25 Cree, Inc. Solid state lighting devices having remote luminescent material-containing element, and lighting methods
US8247248B2 (en) * 2009-05-15 2012-08-21 Achrolux Inc. Methods and apparatus for forming uniform layers of phosphor material on an LED encapsulation structure
US8921876B2 (en) * 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US8727597B2 (en) 2009-06-24 2014-05-20 Oree, Inc. Illumination apparatus with high conversion efficiency and methods of forming the same
US8547009B2 (en) * 2009-07-10 2013-10-01 Cree, Inc. Lighting structures including diffuser particles comprising phosphor host materials
WO2011020098A1 (en) 2009-08-14 2011-02-17 Qd Vision, Inc. Lighting devices, an optical component for a lighting device, and methods
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
JP5555322B2 (ja) * 2009-08-26 2014-07-23 海洋王照明科技股▲ふん▼有限公司 発光素子、その製造方法および発光方法
EP2472613B1 (en) * 2009-08-27 2018-11-28 Kyocera Corporation Light-emitting device
WO2011037877A1 (en) 2009-09-25 2011-03-31 Cree, Inc. Lighting device with low glare and high light level uniformity
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
DE102009048401A1 (de) 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
TW201115779A (en) * 2009-10-26 2011-05-01 Gio Optoelectronics Corp Light emitting apparatus
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US8659106B2 (en) * 2009-10-29 2014-02-25 Nichia Corporation Light emitting device and method of manufacturing the light emitting device
TWI381563B (zh) * 2009-11-20 2013-01-01 Everlight Electronics Co Ltd 發光二極體封裝及其製作方法
JP5658462B2 (ja) 2010-01-26 2015-01-28 パナソニックＩｐマネジメント株式会社 照明装置
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
DE102009058796A1 (de) * 2009-12-18 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102010005169A1 (de) 2009-12-21 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Strahlungsemittierendes Halbleiterbauelement
KR101186648B1 (ko) 2009-12-21 2012-09-28 서울반도체 주식회사 Ｌｅｄ 패키지 및 그의 제조 방법
CN101737723B (zh) * 2009-12-28 2012-09-19 南京工业大学 一种led转光板及其制造方法
JP2011159767A (ja) 2010-01-29 2011-08-18 Toshiba Corp Ｌｅｄパッケージ及びその製造方法
JP5010693B2 (ja) 2010-01-29 2012-08-29 株式会社東芝 Ｌｅｄパッケージ
US9631782B2 (en) * 2010-02-04 2017-04-25 Xicato, Inc. LED-based rectangular illumination device
JP2011165833A (ja) 2010-02-08 2011-08-25 Toshiba Corp Ｌｅｄモジュール
KR20110094996A (ko) * 2010-02-18 2011-08-24 엘지이노텍 주식회사 발광소자 패키지, 그 제조방법 및 조명시스템
JP5257854B2 (ja) * 2010-02-25 2013-08-07 日本電気硝子株式会社 発光色変換部材
JP5257852B2 (ja) * 2010-02-25 2013-08-07 日本電気硝子株式会社 発光色変換部材
JP5257853B2 (ja) * 2010-02-25 2013-08-07 日本電気硝子株式会社 発光色変換用複合部品
DE102010009456A1 (de) 2010-02-26 2011-09-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement mit einem Halbleiterchip und einem Konversionselement und Verfahren zu dessen Herstellung
US8646949B2 (en) * 2010-03-03 2014-02-11 LumenFlow Corp. Constrained folded path resonant white light scintillator
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US8104908B2 (en) * 2010-03-04 2012-01-31 Xicato, Inc. Efficient LED-based illumination module with high color rendering index
US8395312B2 (en) * 2010-04-19 2013-03-12 Bridgelux, Inc. Phosphor converted light source having an additional LED to provide long wavelength light
EP2380944A1 (en) * 2010-04-20 2011-10-26 Koninklijke Philips Electronics N.V. Light source for emitting infrared radiation, particularly for medical skin irradiation
CA2797219A1 (en) 2010-04-26 2011-11-10 Xicato, Inc. Led-based illumination module attachment to a light fixture
BR112012028254A2 (pt) 2010-05-04 2017-08-15 Xicato Inc Dispositivo de iluminação baseado em led, método de interface elétrica e aparelho
JP2011238811A (ja) 2010-05-12 2011-11-24 Konica Minolta Opto Inc 波長変換素子および発光装置
US8637763B2 (en) * 2010-05-26 2014-01-28 Translucent, Inc. Solar cells with engineered spectral conversion
US8684559B2 (en) 2010-06-04 2014-04-01 Cree, Inc. Solid state light source emitting warm light with high CRI
KR101039979B1 (ko) * 2010-06-07 2011-06-09 엘지이노텍 주식회사 발광 소자 패키지 및 조명 시스템
US8455907B2 (en) 2010-06-16 2013-06-04 Stanley Electric Co., Ltd. Semiconductor light emitting device having an optical plate including a meniscus control structure and method of manufacturing
JP5572013B2 (ja) 2010-06-16 2014-08-13 スタンレー電気株式会社 発光装置およびその製造方法
JP5801389B2 (ja) 2010-06-18 2015-10-28 シカト・インコーポレイテッド Ｌｅｄベース照明モジュール用の自己診断装置
JP5566785B2 (ja) * 2010-06-22 2014-08-06 日東電工株式会社 複合シート
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
JP5486431B2 (ja) * 2010-07-27 2014-05-07 日東電工株式会社 発光装置用部品、発光装置およびその製造方法
US8210698B2 (en) * 2010-07-28 2012-07-03 Bridgelux, Inc. Phosphor layer having enhanced thermal conduction and light sources utilizing the phosphor layer
JP2012033823A (ja) 2010-08-02 2012-02-16 Stanley Electric Co Ltd 発光装置およびその製造方法
CN102376860A (zh) 2010-08-05 2012-03-14 夏普株式会社 发光装置及其制造方法
DE102010034923A1 (de) 2010-08-20 2012-02-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Schichtverbunds aus einer Lumineszenzkonversionsschicht und einer Streuschicht
DE102010035490A1 (de) * 2010-08-26 2012-03-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements
US20120051045A1 (en) 2010-08-27 2012-03-01 Xicato, Inc. Led Based Illumination Module Color Matched To An Arbitrary Light Source
US8297767B2 (en) 2010-09-07 2012-10-30 Xicato, Inc. LED-based illumination modules with PTFE color converting surfaces
JP5622494B2 (ja) 2010-09-09 2014-11-12 スタンレー電気株式会社 発光装置およびその製造方法
DE102010045403A1 (de) 2010-09-15 2012-03-15 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8415642B2 (en) 2010-09-30 2013-04-09 Performance Indicator, Llc Photolytically and environmentally stable multilayer structure for high efficiency electromagnetic energy conversion and sustained secondary emission
US8664624B2 (en) 2010-09-30 2014-03-04 Performance Indicator Llc Illumination delivery system for generating sustained secondary emission
US8614539B2 (en) 2010-10-05 2013-12-24 Intematix Corporation Wavelength conversion component with scattering particles
US9546765B2 (en) 2010-10-05 2017-01-17 Intematix Corporation Diffuser component having scattering particles
US8957585B2 (en) 2010-10-05 2015-02-17 Intermatix Corporation Solid-state light emitting devices with photoluminescence wavelength conversion
JP6069205B2 (ja) * 2010-10-05 2017-02-01 インテマティックス・コーポレーションＩｎｔｅｍａｔｉｘ Ｃｏｒｐｏｒａｔｉｏｎ フォトルミネッセンス波長変換を備える発光装置及び波長変換コンポーネント
US8610341B2 (en) 2010-10-05 2013-12-17 Intematix Corporation Wavelength conversion component
US8604678B2 (en) 2010-10-05 2013-12-10 Intematix Corporation Wavelength conversion component with a diffusing layer
US9252874B2 (en) 2010-10-13 2016-02-02 Ccs Technology, Inc Power management for remote antenna units in distributed antenna systems
JP5468517B2 (ja) 2010-10-19 2014-04-09 パナソニック株式会社 半導体発光デバイス
WO2012053924A1 (ru) 2010-10-22 2012-04-26 Vishnyakov Anatoly Vasilyevich Люминесцирующий материал для твердотельных источников белого света
US9648673B2 (en) 2010-11-05 2017-05-09 Cree, Inc. Lighting device with spatially segregated primary and secondary emitters
KR20120050282A (ko) * 2010-11-10 2012-05-18 삼성엘이디 주식회사 발광 소자 패키지 및 그 제조 방법
TW201222878A (en) * 2010-11-23 2012-06-01 Siliconware Precision Industries Co Ltd Light-permeating cover board, fabrication method thereof, and package structure having LED
US8556469B2 (en) 2010-12-06 2013-10-15 Cree, Inc. High efficiency total internal reflection optic for solid state lighting luminaires
WO2012077021A1 (en) 2010-12-09 2012-06-14 Koninklijke Philips Electronics N.V. Lighting apparatus for generating light
JP5864851B2 (ja) * 2010-12-09 2016-02-17 シャープ株式会社 発光装置
DE102010054279A1 (de) * 2010-12-13 2012-06-14 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Strahlungskonversionselements, Strahlungskonversionselement und optoelektronisches Bauelement enthaltend ein Strahlungskonversionselement
EP2655961A4 (en) 2010-12-23 2014-09-03 Qd Vision Inc OPTICAL ELEMENT CONTAINING QUANTUM POINTS
KR101626412B1 (ko) 2010-12-24 2016-06-02 삼성전자주식회사 발광소자 패키지 및 그 제조방법
US8425065B2 (en) 2010-12-30 2013-04-23 Xicato, Inc. LED-based illumination modules with thin color converting layers
US8581287B2 (en) 2011-01-24 2013-11-12 Stanley Electric Co., Ltd. Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US8912717B2 (en) * 2011-01-31 2014-12-16 Osram Gmbh Illumination device including phosphor element and optical system
FI122809B (fi) * 2011-02-15 2012-07-13 Marimils Oy Valolähde ja valolähdenauha
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US8314566B2 (en) 2011-02-22 2012-11-20 Quarkstar Llc Solid state lamp using light emitting strips
US8226274B2 (en) 2011-03-01 2012-07-24 Switch Bulb Company, Inc. Liquid displacer in LED bulbs
US20120250320A1 (en) 2011-03-31 2012-10-04 Xicato, Inc. Color conversion cavities for led-based illumination modules
CN103403892A (zh) 2011-03-31 2013-11-20 松下电器产业株式会社 半导体发光装置
US20120281387A1 (en) * 2011-05-04 2012-11-08 Ligitek Electronics Co., Ltd. Structure of light-emitting diode
DE102011100710A1 (de) * 2011-05-06 2012-11-08 Osram Opto Semiconductors Gmbh Konversionselement für Leuchtdioden und Herstellungsverfahren
DE202011100829U1 (de) 2011-05-18 2011-07-29 Lisa Dräxlmaier GmbH Masseleiter-Verbindungssystem
US8747697B2 (en) * 2011-06-07 2014-06-10 Cree, Inc. Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same
JP5588520B2 (ja) 2011-07-04 2014-09-10 パナソニック株式会社 プラズマディスプレイパネル
EP2730637B1 (en) 2011-07-05 2017-06-14 Panasonic Corporation Rare-earth aluminum garnet type fluorescent substance and light-emitting device obtained using same
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
JP2014525146A (ja) 2011-07-21 2014-09-25 クリー インコーポレイテッド 発光デバイス、パッケージ、部品、ならびに改良された化学抵抗性のための方法および関連する方法
US8403529B2 (en) 2011-08-02 2013-03-26 Xicato, Inc. LED-based illumination module with preferentially illuminated color converting surfaces
US8449129B2 (en) 2011-08-02 2013-05-28 Xicato, Inc. LED-based illumination device with color converting surfaces
CN103764788B (zh) * 2011-08-04 2016-04-20 皇家飞利浦有限公司 光转换器和包括这样的光转换器的照明单元
JP2013038187A (ja) 2011-08-05 2013-02-21 Stanley Electric Co Ltd 発光装置およびその製造方法
US9772270B2 (en) 2011-08-16 2017-09-26 Elwha Llc Devices and methods for recording information on a subject's body
KR101772588B1 (ko) * 2011-08-22 2017-09-13 한국전자통신연구원 클리어 컴파운드 에폭시로 몰딩한 ｍｉｔ 소자 및 그것을 포함하는 화재 감지 장치
DE102011111980A1 (de) 2011-08-29 2013-02-28 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Leuchtdiode und Leuchtdiode
US8485692B2 (en) 2011-09-09 2013-07-16 Xicato, Inc. LED-based light source with sharply defined field angle
US20140191273A1 (en) * 2011-09-09 2014-07-10 Koninklijke Philips N.V. Light-emitting arrangement
JP2013062393A (ja) * 2011-09-14 2013-04-04 Sharp Corp 発光装置
US8579451B2 (en) 2011-09-15 2013-11-12 Osram Sylvania Inc. LED lamp
US8591069B2 (en) 2011-09-21 2013-11-26 Switch Bulb Company, Inc. LED light bulb with controlled color distribution using quantum dots
DE102011118057A1 (de) 2011-11-09 2013-05-16 Giesecke & Devrient Gmbh Spektraler Lumineszenzstandard für den Nahinfrarotbereich
EP2782121B1 (en) * 2011-11-15 2021-01-06 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8591072B2 (en) 2011-11-16 2013-11-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
EP2783398B1 (en) 2011-11-23 2017-10-04 Quarkstar LLC Light-emitting devices providing asymmetrical propagation of light
US9217560B2 (en) 2011-12-05 2015-12-22 Xicato, Inc. Reflector attachment to an LED-based illumination module
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
CN103199172B (zh) * 2012-01-10 2015-10-07 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
US8820951B2 (en) 2012-02-06 2014-09-02 Xicato, Inc. LED-based light source with hybrid spot and general lighting characteristics
CN104106150A (zh) 2012-02-08 2014-10-15 松下电器产业株式会社 发光装置
KR101419664B1 (ko) 2012-02-08 2014-07-15 파나소닉 주식회사 이트륨알루미늄가넷 타입의 형광체
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
US8946747B2 (en) 2012-02-13 2015-02-03 Cree, Inc. Lighting device including multiple encapsulant material layers
US8779687B2 (en) 2012-02-13 2014-07-15 Xicato, Inc. Current routing to multiple LED circuits
US9240530B2 (en) 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
US8957580B2 (en) 2012-02-13 2015-02-17 Cree, Inc. Lighting device including multiple wavelength conversion material layers
CN104204024A (zh) * 2012-03-27 2014-12-10 住友电木株式会社 光反射用树脂组合物、光半导体元件搭载用基板和光半导体装置
KR101444049B1 (ko) 2012-04-09 2014-09-23 니혼코루모 가부시키가이샤 Ｌｅｄ 디바이스
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
DE102012207763B4 (de) * 2012-05-09 2018-05-17 E.G.O. Elektro-Gerätebau GmbH Bedieneinrichtung für ein Haushaltsgerät und Haushaltsgerät
US8680785B2 (en) 2012-05-18 2014-03-25 Xicato, Inc. Variable master current mirror
DE112013002944T5 (de) 2012-06-13 2015-02-19 Innotec, Corp. Flexibler Hohllichtleiter
US9685585B2 (en) 2012-06-25 2017-06-20 Cree, Inc. Quantum dot narrow-band downconverters for high efficiency LEDs
WO2014006501A1 (en) 2012-07-03 2014-01-09 Yosi Shani Planar remote phosphor illumination apparatus
US20140003044A1 (en) 2012-09-06 2014-01-02 Xicato, Inc. Integrated led based illumination device
CN103682030B (zh) * 2012-09-07 2017-05-31 深圳市龙岗区横岗光台电子厂 Led、led装置及led制作工艺
JP2014056896A (ja) * 2012-09-11 2014-03-27 Ns Materials Kk 半導体を利用した発光デバイス及びその製造方法
WO2014138591A1 (en) 2013-03-07 2014-09-12 Quarkstar Llc Illumination device with multi-color light-emitting elements
EP2895793B1 (en) 2012-09-13 2020-11-04 Quarkstar LLC Light-emitting devices with reflective elements
US9291763B2 (en) 2012-09-13 2016-03-22 Quarkstar Llc Light-emitting device with remote scattering element and total internal reflection extractor element
DE102012108828A1 (de) * 2012-09-19 2014-03-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, optisches Element und deren Herstellungsverfahren
DE102012108939A1 (de) * 2012-09-21 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement
TWI464235B (zh) 2012-11-21 2014-12-11 Lextar Electronics Corp 螢光體組成物及應用其之發光二極體元件
US8845380B2 (en) 2012-12-17 2014-09-30 Xicato, Inc. Automated color tuning of an LED based illumination device
CN104918892B (zh) 2012-12-20 2017-03-22 松下知识产权经营株式会社 稀土类铝石榴石型无机氧化物、荧光体以及使用了该荧光体的发光装置
US20140185269A1 (en) 2012-12-28 2014-07-03 Intermatix Corporation Solid-state lamps utilizing photoluminescence wavelength conversion components
US8870617B2 (en) 2013-01-03 2014-10-28 Xicato, Inc. Color tuning of a multi-color LED based illumination device
JP6097084B2 (ja) 2013-01-24 2017-03-15 スタンレー電気株式会社 半導体発光装置
KR101281462B1 (ko) 2013-02-28 2013-07-03 아이탑스오토모티브 주식회사 보행자 보호를 위한 화약식 후드 리프팅 모듈 및 이를 이용한 자동차
US9752757B2 (en) 2013-03-07 2017-09-05 Quarkstar Llc Light-emitting device with light guide for two way illumination
CN104968763B (zh) 2013-03-08 2016-12-21 松下知识产权经营株式会社 稀土类铝石榴石型无机氧化物、荧光体以及使用了该荧光体的发光装置
WO2014151263A1 (en) 2013-03-15 2014-09-25 Intematix Corporation Photoluminescence wavelength conversion components
WO2014144706A2 (en) 2013-03-15 2014-09-18 Quarkstar Llc Color tuning of light-emitting devices
US8770800B1 (en) 2013-03-15 2014-07-08 Xicato, Inc. LED-based light source reflector with shell elements
TWM460230U (zh) * 2013-04-11 2013-08-21 Genesis Photonics Inc 發光裝置
CN103236486B (zh) * 2013-04-22 2017-04-26 厦门立达信绿色照明集团有限公司 Led封装方法、封装结构及使用该封装结构的led灯
JP2013179335A (ja) * 2013-05-08 2013-09-09 Mitsubishi Chemicals Corp 白色発光素子
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
TWI626395B (zh) 2013-06-11 2018-06-11 晶元光電股份有限公司 發光裝置
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US9591726B2 (en) 2013-07-02 2017-03-07 Xicato, Inc. LED-based lighting control network communication
US9596737B2 (en) 2013-07-02 2017-03-14 Xicato, Inc. Multi-port LED-based lighting communications gateway
DE102013213073A1 (de) * 2013-07-04 2015-01-08 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelementes
US9099575B2 (en) * 2013-07-16 2015-08-04 Cree, Inc. Solid state lighting devices and fabrication methods including deposited light-affecting elements
US9797573B2 (en) 2013-08-09 2017-10-24 Performance Indicator, Llc Luminous systems
KR102080778B1 (ko) * 2013-09-11 2020-04-14 엘지이노텍 주식회사 발광 소자 패키지
WO2015042193A2 (en) 2013-09-17 2015-03-26 Xicato, Inc. Led based illumination device with integrated output window
EP3053987A4 (en) 2013-09-30 2016-11-30 Panasonic Ip Man Co Ltd PHOSPHORUS, LIGHT-EMITTING DEVICE THEREFOR, LIGHTING LIGHT SOURCE AND LIGHTING DEVICE THEREWITH
US20160380172A1 (en) * 2013-11-28 2016-12-29 Osram Opto Semiconductors Gmbh Component arrangement and method for producing a component arrangement
US9425896B2 (en) 2013-12-31 2016-08-23 Xicato, Inc. Color modulated LED-based illumination
DE102014100991A1 (de) 2014-01-28 2015-07-30 Osram Opto Semiconductors Gmbh Lichtemittierende Anordnung und Verfahren zur Herstellung einer lichtemittierenden Anordnung
US9466772B2 (en) * 2014-03-03 2016-10-11 Bridgelux, Inc. Method and apparatus for providing high-temperature multi-layer optics
JP2015176960A (ja) * 2014-03-14 2015-10-05 株式会社東芝 発光装置
US9788379B2 (en) 2014-03-28 2017-10-10 Xicato, Inc. Deep dimming of an LED-based illumination device
US9781799B2 (en) 2014-05-05 2017-10-03 Xicato, Inc. LED-based illumination device reflector having sense and communication capability
DE102014108188A1 (de) * 2014-06-11 2015-12-17 Osram Gmbh Optoelektronisches Halbleiterbauteil
CN104157775A (zh) * 2014-06-17 2014-11-19 京东方光科技有限公司 一种led照明装置及封装方法
US9528876B2 (en) * 2014-09-29 2016-12-27 Innovative Science Tools, Inc. Solid state broad band near-infrared light source
CN104300073A (zh) * 2014-11-04 2015-01-21 常州晶玺照明有限公司 一种基于紫光芯片的360°全周式发光led灯丝
KR102346798B1 (ko) 2015-02-13 2022-01-05 삼성전자주식회사 반도체 발광장치
US9960848B2 (en) 2015-02-27 2018-05-01 Xicato, Inc. Commissioning of devices on a lighting communications network
US9853730B2 (en) 2015-02-27 2017-12-26 Xicato, Inc. Lighting based authentication of a mobile electronic device
US9930741B2 (en) 2015-02-27 2018-03-27 Xicato, Inc. Synchronized light control over a wireless network
US9788397B2 (en) 2015-02-27 2017-10-10 Xicato, Inc. Lighting communication advertising packets
US10680208B2 (en) 2015-03-11 2020-06-09 National Taiwan University Electroluminescent device and display pixel structure using the same
US20160268554A1 (en) * 2015-03-11 2016-09-15 National Taiwan University Electroluminescent devices with improved optical out-coupling efficiencies
US9781798B2 (en) 2015-04-08 2017-10-03 Xicato, Inc. LED-based illumination systems having sense and communication capability
US9943042B2 (en) 2015-05-18 2018-04-17 Biological Innovation & Optimization Systems, LLC Grow light embodying power delivery and data communications features
US10009980B2 (en) 2015-05-18 2018-06-26 Xicato, Inc. Lighting communications gateway
DE102015108700A1 (de) * 2015-06-02 2016-12-08 Infineon Technologies Austria Ag Halbleiter-Leistungs-Package und Verfahren zu ihrer Herstellung
CN106328008B (zh) * 2015-06-30 2019-03-22 光宝光电(常州)有限公司 胶体填充至壳体的制法、发光二极管的数字显示器及制法
US10663646B2 (en) 2015-07-08 2020-05-26 Bambu Vault Llc LED panel lighting system
JP6458671B2 (ja) * 2015-07-14 2019-01-30 日亜化学工業株式会社 発光装置の製造方法
WO2017019962A1 (en) 2015-07-30 2017-02-02 Heliohex, Llc Lighting device, assembly and method
US9788387B2 (en) 2015-09-15 2017-10-10 Biological Innovation & Optimization Systems, LLC Systems and methods for controlling the spectral content of LED lighting devices
US9844116B2 (en) 2015-09-15 2017-12-12 Biological Innovation & Optimization Systems, LLC Systems and methods for controlling the spectral content of LED lighting devices
US10964853B2 (en) 2015-09-24 2021-03-30 Osram Oled Gmbh Stable red ceramic phosphors and technologies including the same
US9750092B2 (en) 2015-10-01 2017-08-29 Xicato, Inc. Power management of an LED-based illumination device
US11021610B2 (en) 2016-01-14 2021-06-01 Basf Se Perylene bisimides with rigid 2,2′-biphenoxy bridges
US10355175B2 (en) 2016-03-10 2019-07-16 Panasonic Intellectual Property Management Co., Ltd. Light emitting device
JP2018003006A (ja) 2016-06-24 2018-01-11 パナソニック株式会社 蛍光体およびその製造方法、ならびに発光装置
CN109791968A (zh) 2016-07-26 2019-05-21 克利公司 发光二极管、组件和相关方法
CN107871808A (zh) * 2016-08-22 2018-04-03 深圳市欧弗德光电科技有限公司 一种点胶工艺及其在制备照明用光源体中的应用
US10595376B2 (en) 2016-09-13 2020-03-17 Biological Innovation & Optimization Systems, LLC Systems and methods for controlling the spectral content of LED lighting devices
JP6493348B2 (ja) * 2016-09-30 2019-04-03 日亜化学工業株式会社 発光装置
US10707277B2 (en) 2016-10-04 2020-07-07 Vuereal Inc. Method of integrating functional tuning materials with micro devices and structures thereof
WO2018065901A1 (en) * 2016-10-04 2018-04-12 Vuereal Inc. Color conversion layer integration into display substrate with high intensity light sources
CN109803969B (zh) 2016-10-06 2022-08-05 巴斯夫欧洲公司 2-苯基苯氧基取代的苝双酰亚胺化合物及其用途
US10522720B2 (en) 2017-02-25 2019-12-31 Anatoly Glass, Llc Converter plate for producing polychromatic light
KR102356226B1 (ko) * 2017-06-14 2022-01-27 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체소자 및 반도체소자 패키지
DE102017114668A1 (de) 2017-06-30 2019-01-03 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Anordnung mit einem optoelektronischen Halbleiterbauteil
KR20200100702A (ko) 2017-12-19 2020-08-26 바스프 에스이 시아노아릴 치환된 벤즈(오티)오크산텐 화합물
KR102006188B1 (ko) * 2017-12-29 2019-08-01 엘지전자 주식회사 반도체 발광 소자를 이용한 차량용 램프 및 그 제어방법
WO2019179981A1 (en) 2018-03-20 2019-09-26 Basf Se Yellow light emitting device
US11024785B2 (en) * 2018-05-25 2021-06-01 Creeled, Inc. Light-emitting diode packages
DE102018213377A1 (de) * 2018-08-09 2020-02-13 Robert Bosch Gmbh Spektrometer und Verfahren zur Kalibrierung des Spektrometers
USD902448S1 (en) 2018-08-31 2020-11-17 Cree, Inc. Light emitting diode package
US11335833B2 (en) 2018-08-31 2022-05-17 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11233183B2 (en) 2018-08-31 2022-01-25 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11121647B2 (en) * 2018-12-13 2021-09-14 Magnecomp Corporation Contact pad features
US11107957B2 (en) 2019-03-08 2021-08-31 Foshan Nationstar Optoelectronics Co., Ltd. LED device and backlight module
US11101411B2 (en) 2019-06-26 2021-08-24 Creeled, Inc. Solid-state light emitting devices including light emitting diodes in package structures
US10950773B1 (en) 2019-12-02 2021-03-16 Bruce H Baretz Light emitting diode devices
JP7054019B2 (ja) * 2020-04-27 2022-04-13 日亜化学工業株式会社 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Family Cites Families (413)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2096693A (en) * 1937-04-03 1937-10-19 Hygrade Sylvania Corp Luminescent coating for electric lamps
US2192869A (en) * 1937-10-27 1940-03-05 Pearce John Harold George Manufacture of fluorescent discharge tubes
DE714271C (de) 1939-08-11 1941-11-25 Patra Patent Treuhand Elektrische Quecksilberdampfroehre oder -lampe mit Edelgasgrundfuellung und Silicatleuchtstoffschicht
US2927279A (en) 1954-06-14 1960-03-01 Cgs Lab Inc Variable frequency oscillator system
US2924732A (en) 1957-07-05 1960-02-09 Westinghouse Electric Corp Area-type light source
NL284439A (zh) 1961-10-20
US3316109A (en) 1963-03-11 1967-04-25 Westinghouse Electric Corp Coating composition
US3312851A (en) 1963-04-26 1967-04-04 Westinghouse Electric Corp Electroluminescent lamp structure having the phosphor particles dispersed in a modified cyanoethylated polyvinyl alcohol resin
DE1915290U (de) 1965-02-05 1965-05-06 Elert Dipl Ing Bade Fernsprechhaeuschen.
US3440471A (en) 1966-03-16 1969-04-22 Gen Telephone & Elect Electroluminescent cell matrix material of improved stability
GB1208308A (en) 1966-10-27 1970-10-14 Matsushita Electric Ind Co Ltd Electroluminescent display devices
US3453604A (en) 1966-11-15 1969-07-01 Bell Telephone Labor Inc Optical memory device employing multiphoton-excited fluorescing material to reduce exposure crosstalk
NL152702B (nl) 1966-12-31 1977-03-15 Philips Nv Werkwijze voor het vervaardigen van een kathodestraalbuis, alsmede een kathodestraalbuis, vervaardigd door toepassing van deze werkwijze.
US3519474A (en) 1967-02-02 1970-07-07 Corning Glass Works Light-diffusing surfaces for glass-ceramic articles
US3565815A (en) 1967-12-28 1971-02-23 Ind Mfg Co Inc Phosphor containing plastic polystyrene
US3529200A (en) 1968-03-28 1970-09-15 Gen Electric Light-emitting phosphor-diode combination
JPS467462Y1 (zh) 1968-04-20 1971-03-17
US3510732A (en) 1968-04-22 1970-05-05 Gen Electric Solid state lamp having a lens with rhodamine or fluorescent material dispersed therein
JPS4717684Y1 (zh) 1968-05-08 1972-06-20
NL6811326A (zh) 1968-08-09 1970-02-11
NL6814348A (zh) 1968-10-07 1970-04-09
US3659136A (en) 1969-04-16 1972-04-25 Bell Telephone Labor Inc Gallium arsenide junction diode-activated up-converting phosphor
US3822215A (en) 1969-04-16 1974-07-02 Bell Telephone Labor Inc Phosphor rare earth oxychloride compositions
US3621340A (en) 1969-04-16 1971-11-16 Bell Telephone Labor Inc Gallium arsenide diode with up-converting phosphor coating
US3593055A (en) * 1969-04-16 1971-07-13 Bell Telephone Labor Inc Electro-luminescent device
US3699478A (en) 1969-05-26 1972-10-17 Bell Telephone Labor Inc Display system
SE364160B (zh) 1969-05-26 1974-02-11 Western Electric Co
US3573568A (en) 1969-06-18 1971-04-06 Gen Electric Light emitting semiconductor chips mounted in a slotted substrate forming a display apparatus
US3602758A (en) * 1969-06-20 1971-08-31 Westinghouse Electric Corp Phosphor blend lamps which reduce the proportions of the costlier phosphors
US3653817A (en) 1969-06-30 1972-04-04 Zenith Radio Corp Method for preparing a rare earth phosphor
JPS486962Y1 (zh) 1969-09-20 1973-02-22
GB1290912A (zh) 1969-09-23 1972-09-27
JPS4820539Y1 (zh) 1969-10-28 1973-06-13
CA932474A (en) * 1969-12-12 1973-08-21 Kressel Henry Electroluminescent device
US3654463A (en) 1970-01-19 1972-04-04 Bell Telephone Labor Inc Phosphorescent devices
US3691482A (en) * 1970-01-19 1972-09-12 Bell Telephone Labor Inc Display system
US3652956A (en) 1970-01-23 1972-03-28 Bell Telephone Labor Inc Color visual display
JPS491221Y1 (zh) 1970-01-26 1974-01-12
JPS4915860Y1 (zh) 1970-01-28 1974-04-20
JPS5441660Y1 (zh) 1970-02-18 1979-12-05
JPS529334Y1 (zh) 1970-02-18 1977-02-26
US3669478A (en) 1970-05-04 1972-06-13 Gen Electric Machine and process for semiconductor device assembly
US3787684A (en) 1970-12-30 1974-01-22 S Isenberg Beta activated ultraviolet radiation source surrounded by a visible light producing fluorescent agent
US3742277A (en) 1971-03-18 1973-06-26 Gte Laboratories Inc Flying spot scanner having screen of strontium thiogallte coactivatedby trivalent cerium and divalent lead
US3821590A (en) 1971-03-29 1974-06-28 Northern Electric Co Encapsulated solid state light emitting device
US3742833A (en) 1971-06-14 1973-07-03 J Sewell System for optically encoding an item and verifying same
BE786323A (fr) 1971-07-16 1973-01-15 Eastman Kodak Co Ecran renforcateur et produit radiographique le
DE7128442U (de) 1971-07-23 1971-12-30 Siemens Ag Hermetisch abgeschlossenes gehaeuse fuer halbleiterbauelemente
JPS538926Y2 (zh) 1971-09-20 1978-03-08
JPS48100083A (zh) 1972-02-24 1973-12-18
JPS48102585A (zh) * 1972-04-04 1973-12-22
JPS491221A (zh) 1972-04-17 1974-01-08
JPS4924355U (zh) 1972-06-02 1974-03-01
DE2227322C3 (de) 1972-06-05 1980-12-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diffusstrahlende Lumineszenz-Halbleiterdiode mit einem Halbleiterkörper
JPS4915860A (zh) * 1972-06-09 1974-02-12
JPS532347B2 (zh) 1972-06-26 1978-01-27
JPS531434Y2 (zh) 1972-07-05 1978-01-14
JPS5419660Y2 (zh) 1972-07-27 1979-07-19
JPS5240959B2 (zh) * 1972-08-07 1977-10-15
US3932881A (en) * 1972-09-05 1976-01-13 Nippon Electric Co., Inc. Electroluminescent device including dichroic and infrared reflecting components
US3774086A (en) 1972-09-25 1973-11-20 Gen Electric Solid state lamp having visible-emitting phosphor at edge of infrated-emitting element
DE2350911A1 (de) 1972-10-12 1974-04-18 Minnesota Mining & Mfg Licht emittierende zinkoxyd-diode und verfahren zu ihrer herstellung
US3942185A (en) * 1972-12-13 1976-03-02 U.S. Philips Corporation Polychromatic electroluminescent device
JPS49105065U (zh) 1972-12-19 1974-09-09
JPS5224146Y2 (zh) 1973-01-18 1977-06-01
JPS49112577U (zh) 1973-01-19 1974-09-26
GB1455291A (en) 1973-02-05 1976-11-10 Rca Corp Amplifier which consumes a substantially constant current
JPS538225Y2 (zh) 1973-02-13 1978-03-03
US3780357A (en) 1973-02-16 1973-12-18 Hewlett Packard Co Electroluminescent semiconductor display apparatus and method of fabricating the same
JPS49122292U (zh) 1973-02-20 1974-10-19
US4052329A (en) 1973-03-02 1977-10-04 Matsushita Electric Industrial Co., Ltd. Method of preparing cerium-activated yttrium silicate phosphor
US3819974A (en) 1973-03-12 1974-06-25 D Stevenson Gallium nitride metal-semiconductor junction light emitting diode
JPS531180Y2 (zh) 1973-05-11 1978-01-13
JPS5043913A (zh) 1973-08-20 1975-04-21
JPS5074875A (zh) 1973-11-08 1975-06-19
JPS5074875U (zh) 1973-11-14 1975-06-30
FR2262407B1 (zh) 1974-02-22 1977-09-16 Radiotechnique Compelec
JPS5245181Y1 (zh) 1974-02-25 1977-10-14
JPS5043913Y1 (zh) 1974-04-08 1975-12-15
US3914786A (en) 1974-04-19 1975-10-21 Hewlett Packard Co In-line reflective lead-pair for light-emitting diodes
JPS5240959Y2 (zh) 1974-05-08 1977-09-16
US4195226A (en) 1975-03-07 1980-03-25 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Luminescent material and preparation and use thereof
JPS51145288U (zh) 1975-05-16 1976-11-22
US4034257A (en) 1975-06-05 1977-07-05 General Electric Company Mercury vapor lamp utilizing a combination of phosphor materials
JPS5240959A (en) 1975-09-29 1977-03-30 Toshiba Corp Color picture tube
JPS555533Y2 (zh) 1976-02-20 1980-02-08
US4034446A (en) 1976-02-25 1977-07-12 Paris Processing Corporation Double-tiered swirling machine for pile fabric
JPS561224Y2 (zh) 1976-03-18 1981-01-13
JPS52135663A (en) 1976-05-10 1977-11-12 Hitachi Ltd Manufacture for brown tube
NL181063C (nl) 1976-05-13 1987-06-01 Philips Nv Luminescerend scherm; lagedrukkwikdampontladingslamp; werkwijze voor de bereiding van een luminescerend materiaal.
US4075532A (en) 1976-06-14 1978-02-21 General Electric Company Cool-white fluorescent lamp with phosphor having modified spectral energy distribution to improve luminosity thereof
DE2629641C3 (de) * 1976-07-01 1979-03-08 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V., 8000 Muenchen Vorrichtung zur Umwandlung von Lichtenergie in Wärmeenergie
DE2634264A1 (de) 1976-07-30 1978-02-02 Licentia Gmbh Halbleiter-lumineszenzbauelement
GB1594356A (en) 1976-08-19 1981-07-30 Bbc Brown Boveri & Cie Display panels having electroluminescent layers
JPS5632582Y2 (zh) 1976-08-25 1981-08-03
GB1589964A (en) 1976-09-03 1981-05-20 Johnson Matthey Co Ltd Luminescent materials
DE2642465C3 (de) 1976-09-21 1981-01-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer VerguBmasse
JPS554898Y2 (zh) 1976-11-10 1980-02-05
JPS5391658U (zh) 1976-12-27 1978-07-26
JPS565884Y2 (zh) 1976-12-31 1981-02-09
JPS53100787U (zh) 1977-01-18 1978-08-15
JPS53100787A (en) * 1977-02-15 1978-09-02 Toshiba Corp Semiconductor light emitting display device
JPS5927787B2 (ja) 1977-04-13 1984-07-07 株式会社東芝 紫外線励起形螢光体
NL7707008A (nl) 1977-06-24 1978-12-28 Philips Nv Luminescentiescherm.
FR2400817A1 (fr) 1977-08-19 1979-03-16 Radiotechnique Compelec Dispositifs electroluminescents pour affichage au soleil
JPS5466093U (zh) 1977-10-19 1979-05-10
JPS5466093A (en) * 1977-11-07 1979-05-28 Toshiba Corp Photo conductor display unit
US4203792A (en) 1977-11-17 1980-05-20 Bell Telephone Laboratories, Incorporated Method for the fabrication of devices including polymeric materials
JPS5489984U (zh) 1977-12-05 1979-06-26
US4478588A (en) 1978-03-06 1984-10-23 Amp Incorporated Light emitting diode assembly
US4173495A (en) 1978-05-03 1979-11-06 Owens-Illinois, Inc. Solar collector structures containing thin film polysiloxane, and solar cells
NL7806828A (nl) 1978-06-26 1979-12-28 Philips Nv Luminescentiescherm.
FR2436505A1 (fr) 1978-09-12 1980-04-11 Radiotechnique Compelec Dispositif optoelectronique a emetteur et recepteur couples
US4431941A (en) 1979-06-11 1984-02-14 Gte Products Corporation Fluorescent lamp having double phosphor layer
IT1132065B (it) 1979-06-15 1986-06-25 Gte Prod Corp Fosforo alluminato emettitore di raggi ultravioletti e lampade fluorescenti per l'abbronzatura artificiale utilizzanti tale fosforo
CA1144743A (en) 1979-06-21 1983-04-19 Charles F. Chenot Ce-doped yttrium aluminum garnet and devices incorporating same
JPS5843584Y2 (ja) 1979-10-26 1983-10-03 株式会社 白元 防虫剤包装袋
FR2471014A1 (fr) 1979-11-28 1981-06-12 Radiotechnique Compelec Dispositif d'affichage a diodes electroluminescentes
US4262206A (en) 1980-01-11 1981-04-14 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fluorescent radiation converter
DE3016103A1 (de) 1980-04-25 1981-10-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung transparenter geissharze
JPH0211694Y2 (zh) 1980-09-06 1990-03-28
JPS5758797Y2 (zh) 1980-10-01 1982-12-15
JPS57124838U (zh) 1981-01-30 1982-08-04
US4495514A (en) * 1981-03-02 1985-01-22 Eastman Kodak Company Transparent electrode light emitting diode and method of manufacture
JPS57174847A (en) 1981-04-22 1982-10-27 Mitsubishi Electric Corp Fluorescent discharge lamp
DE3117571A1 (de) * 1981-05-04 1982-11-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lumineszenz-halbleiterbauelement
JPS587858U (ja) 1981-07-03 1983-01-19 山里エレクトロナイト株式会社 サブランス・プロ−ブ
DE3129996A1 (de) 1981-07-29 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Optokoppler
JPS5843584A (ja) * 1981-09-09 1983-03-14 Canon Inc 発光ダイオ−ド
JPS5851770U (ja) 1981-10-05 1983-04-08 吉川　捷右 メダル貸出装置
US4431942A (en) 1981-11-04 1984-02-14 North American Philips Electric Corp. Color-corrected hid mercury-vapor lamp having good color rendering and a desirable emission color
JPS58120795U (ja) 1982-02-10 1983-08-17 宮野　英一 気泡利用の水中浮遊物上下動装置
GB2121598A (en) 1982-04-27 1983-12-21 Marconi Co Ltd Sealing optoelectronic packages
US4599537A (en) * 1982-04-30 1986-07-08 Shigeaki Yamashita IR light emitting apparatus with visible detection means
JPS5950455U (ja) 1982-09-24 1984-04-03 三洋電機株式会社 発光ダイオ−ド装置
US5184114A (en) * 1982-11-04 1993-02-02 Integrated Systems Engineering, Inc. Solid state color display system and light emitting diode pixels therefor
FR2538171B1 (fr) 1982-12-21 1986-02-28 Thomson Csf Diode electroluminescente a emission de surface
JPS59150571U (ja) 1983-03-28 1984-10-08 株式会社川島鉄工所 穀類選別機
US4780643A (en) 1983-03-30 1988-10-25 Minnesota Mining And Manufacturing Company Semiconductor electrodes having multicolor luminescence
US4479886A (en) 1983-08-08 1984-10-30 Gte Products Corporation Method of making cerium activated yttrium aluminate phosphor
US4550256A (en) * 1983-10-17 1985-10-29 At&T Bell Laboratories Visual display system utilizing high luminosity single crystal garnet material
JPS60101175A (ja) 1983-11-05 1985-06-05 Sony Corp 投射型テレビ用緑色螢光体
JPS6090680U (ja) 1983-11-25 1985-06-21 日本精機株式会社 交叉コイル式指示計器
JPS60101172U (ja) 1983-12-14 1985-07-10 凸版印刷株式会社 絵本
US4684592A (en) 1984-04-06 1987-08-04 Fuji Photo Film Co., Ltd. Stimulable phosphor sheet
US4825124A (en) 1984-05-07 1989-04-25 Gte Laboratories Incorporated Phosphor particle, fluorescent lamp, and manufacturing method
US4710674A (en) 1984-05-07 1987-12-01 Gte Laboratories Incorporated Phosphor particle, fluorescent lamp, and manufacturing method
JPS60185457U (ja) 1984-05-19 1985-12-09 セイレイ工業株式会社 枝打機のエンジンストツプセンサ−配置構造
US4952512A (en) * 1984-06-22 1990-08-28 Loskutoff David J Gene encoding an inhibitor of tissue-type and urokinase-type plasminogen activators
JPS6110827A (ja) * 1984-06-27 1986-01-18 Matsushita Electronics Corp 陰極線管螢光体膜の形成方法
IT1183061B (it) 1984-07-31 1987-10-05 Zambon Spa Composti dotati di attivita'antiallergica
US4665003A (en) 1984-07-31 1987-05-12 Fuji Photo Film Co., Ltd. Stimulable phosphor sheet and method of conveying the same
JPH0770560B2 (ja) 1985-03-15 1995-07-31 松下電器産業株式会社 デイスプレイパネルの実装体
JPS61220250A (ja) 1985-03-26 1986-09-30 Sony Corp 陰極線管
JPH0314311Y2 (zh) 1985-03-29 1991-03-29
JPS61170895U (zh) 1985-04-15 1986-10-23
JPS61240680A (ja) 1985-04-17 1986-10-25 Fujitsu Ltd バイポ−ラトランジスタの製造方法
JPS61248839A (ja) 1985-04-26 1986-11-06 Nippon Kogaku Kk <Nikon> 収納ウエハの取り出し装置
NL8502025A (nl) 1985-07-15 1987-02-02 Philips Nv Lagedrukkwikdampontladingslamp.
US4818983A (en) * 1985-08-20 1989-04-04 Hamamatsu Photonics Kabushiki Kaisha Optical image generator having a spatial light modulator and a display device
JPH0745655B2 (ja) * 1985-11-07 1995-05-17 化成オプトニクス株式会社 蛍光体の製造方法
US4818434A (en) 1985-11-15 1989-04-04 Quantex Corporation Thermoluminescent material including fusible salt
JPH0438538Y2 (zh) 1985-12-02 1992-09-09
US5166456A (en) 1985-12-16 1992-11-24 Kasei Optonix, Ltd. Luminescent phosphor composition
NL8600023A (nl) * 1986-01-08 1987-08-03 Philips Nv Lagedrukkwikdampontladingslamp.
JPS62232827A (ja) 1986-03-31 1987-10-13 松下電器産業株式会社 照光素子付操作パネル駆動回路
DE3670504D1 (de) 1986-06-16 1990-05-23 Agfa Gevaert Nv Verfahren zur umwandlung von roentgenstrahlen.
JPS62201989U (zh) 1986-06-16 1987-12-23
US4734619A (en) * 1986-07-07 1988-03-29 Karel Havel Display device with variable color background
EP0253589A1 (en) 1986-07-14 1988-01-20 AT&T Corp. Display devices utilizing crystalline and powder phosphors
US4894583A (en) * 1986-07-14 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Display devices with yttrium orthosilicate phosphors
DE3633251A1 (de) 1986-09-30 1988-03-31 Siemens Ag Optoelektronisches koppelelement
JPS63100990A (ja) 1986-10-18 1988-05-06 サンデン株式会社 振動装置
JPS6377299U (zh) 1986-11-08 1988-05-23
US4875750A (en) 1987-02-25 1989-10-24 Siemens Aktiengesellschaft Optoelectronic coupling element and method for its manufacture
JPH07121123B2 (ja) 1987-03-02 1995-12-20 日本電信電話株式会社 符号化処理装置
JPH079998B2 (ja) 1988-01-07 1995-02-01 科学技術庁無機材質研究所長 立方晶窒化ほう素のＰ−ｎ接合型発光素子
JPS63280467A (ja) 1987-05-12 1988-11-17 Toshiba Corp 光半導体素子
EP0292616B1 (en) 1987-05-26 1992-05-20 Agfa-Gevaert N.V. X-ray conversion into light
JPH0538926Y2 (zh) 1987-07-01 1993-10-01
US5023461A (en) * 1987-08-18 1991-06-11 Konica Corporation Radiation image storage panel having low refractive index layer and protective layer
JPS6471053A (en) 1987-09-10 1989-03-16 Matsushita Electronics Corp Fluorescent high-pressure mercury lamp
US4965091A (en) 1987-10-01 1990-10-23 At&T Bell Laboratories Sol gel method for forming thin luminescent films
JPH0742152Y2 (ja) 1987-10-12 1995-09-27 株式会社三陽電機製作所 無停電電源装置
DE3736970C3 (de) 1987-10-30 1996-08-01 Stockhausen Chem Fab Gmbh Wasserfreie Hautreinigungsmittel und ihre Verwendung
JPH01175103A (ja) 1987-12-29 1989-07-11 Fujitsu Ltd バックライト
US5012274A (en) 1987-12-31 1991-04-30 Eugene Dolgoff Active matrix LCD image projection system
US4843280A (en) 1988-01-15 1989-06-27 Siemens Corporate Research & Support, Inc. A modular surface mount component for an electrical device or led's
DE3804293A1 (de) * 1988-02-12 1989-08-24 Philips Patentverwaltung Anordnung mit einer elektrolumineszenz- oder laserdiode
DE68916070T2 (de) 1988-03-16 1994-10-13 Mitsubishi Rayon Co Phosphorpastenzusammensetzungen und damit erhaltene Überzüge.
JPH01143366U (zh) 1988-03-22 1989-10-02
JPH01260707A (ja) * 1988-04-11 1989-10-18 Idec Izumi Corp 白色発光装置
JPH0832120B2 (ja) 1988-05-27 1996-03-27 松下電器産業株式会社 音場可変装置
JPH051115Y2 (zh) 1988-06-08 1993-01-12
JPS6490311A (en) 1988-06-25 1989-04-06 Takechi Komusho Kk Preventing structure for liquefaction of base ground
JP2705183B2 (ja) 1988-07-30 1998-01-26 ソニー株式会社 イットリウム・アルミニウム・ガーネット微粒子およびイットリウム・アルミニウム・ガーネット系蛍光体微粒子の製造方法
KR920010085B1 (ko) 1988-07-30 1992-11-14 소니 가부시기가이샤 이트륨 · 알루미늄 · 가넷미립자의 제조방법
JPH0291980A (ja) 1988-09-29 1990-03-30 Toshiba Lighting & Technol Corp 固体発光素子
GB8823691D0 (en) 1988-10-08 1988-11-16 Emi Plc Thorn Aquarium lighting
JPH0543913Y2 (zh) 1988-10-31 1993-11-05
JPH0799345B2 (ja) 1988-10-31 1995-10-25 防衛庁技術研究本部長 水温プロファイルデータ生成方法及びその装置
JPH073155Y2 (ja) 1988-11-08 1995-01-30 日産自動車株式会社 燃焼器
DE3902001C2 (de) * 1989-01-24 1995-08-31 Tacan Corp Verwendung eines Fluoreszenz-Materials
US5137940A (en) 1989-02-09 1992-08-11 Shin-Etsu Chemical Co., Ltd. Semiconductor encapsulating epoxy resin compositions
JPH0315092A (ja) * 1989-02-09 1991-01-23 Dainippon Toryo Co Ltd 蛍光体組成物及びそれを用いた表示装置
JPH0636348B2 (ja) * 1989-02-23 1994-05-11 日亜化学工業株式会社 高演色型蛍光ランプ
US5126214A (en) * 1989-03-15 1992-06-30 Idemitsu Kosan Co., Ltd. Electroluminescent element
JPH0717901B2 (ja) 1989-03-31 1995-03-01 日亜化学工業株式会社 ホウ酸インジウム蛍光体および陰極線管
IT1229159B (it) 1989-04-07 1991-07-22 Minnesota Mining & Mfg Metodo per registrare e riprodurre l'immagine di una radiazione, pannello e fosfori per la memorizzazione dell'immagine di una radiazione.
EP0400175B1 (de) 1989-05-31 1994-12-28 Siemens Aktiengesellschaft Oberflächenmontierbares Opto-Bauelement
EP1187227A3 (de) 1989-05-31 2002-08-28 Osram Opto Semiconductors GmbH & Co. OHG Oberflächenmontierbares Opto-Bauelement und Verfahren zum Herstellen desselben
DE58907120D1 (de) * 1989-06-01 1994-04-07 Weidmueller Interface Bezeichnungsträger für elektrische Leiter.
JPH0745655Y2 (ja) 1989-06-27 1995-10-18 株式会社小松製作所 油圧式掘削機のロック装置
JPH0677537B2 (ja) 1989-07-26 1994-10-05 山崎製パン株式会社 蒸しボックスにおける蒸し製品の蒸し方法と蒸しボックスの温度制御方法及びその装置
JP2536628B2 (ja) 1989-08-02 1996-09-18 信越化学工業株式会社 半導体素子保護用組成物
JPH06104491B2 (ja) 1989-09-20 1994-12-21 トキワ工業株式会社 ワークの分割供給方法とその装置
US5624602A (en) 1989-09-25 1997-04-29 Osram Sylvania Inc. Method of improving the maintenance of a fluorescent lamp containing terbium-activated cerium magnesium aluminate phosphor
JPH03116857A (ja) 1989-09-29 1991-05-17 Mitsui Petrochem Ind Ltd 発光または受光装置
US4935856A (en) 1989-10-05 1990-06-19 Dialight Corporation Surface mounted LED package
USRE34254E (en) 1989-10-05 1993-05-18 Dialight Corporation Surface mounted LED package
JP2519504Y2 (ja) 1989-10-31 1996-12-04 豊田合成株式会社 発光ダイオード
US5120214A (en) * 1989-11-13 1992-06-09 Control Techtronics, Inc. Acoustical burner control system and method
JPH03160714A (ja) 1989-11-20 1991-07-10 Fujitsu Ltd 半導体装置及びその製造方法
US5019746A (en) * 1989-12-04 1991-05-28 Hewlett-Packard Company Prefabricated wire leadframe for optoelectronic devices
US5118985A (en) 1989-12-29 1992-06-02 Gte Products Corporation Fluorescent incandescent lamp
JP2909118B2 (ja) 1990-01-25 1999-06-23 株式会社東芝 赤色発光蛍光体およびこれを用いた陰極線管
EP0441622B1 (en) 1990-02-07 1994-11-02 Shin-Etsu Chemical Co., Ltd. Epoxy resin compositions containing highly transparent silica-titania glass beads
EP0446746B1 (en) 1990-03-14 1996-03-13 Matsushita Electric Industrial Co., Ltd. Light-emitting thin film and thin film EL device
JP2715620B2 (ja) * 1990-03-14 1998-02-18 松下電器産業株式会社 複合発光体薄膜及び薄膜ｅｌ素子
US5137659A (en) 1990-03-20 1992-08-11 The United States Of America As Represented By The United States Department Of Energy Solid-state radiation-emitting compositions and devices
JPH03287690A (ja) 1990-04-04 1991-12-18 Kasei Optonix Co Ltd 蛍光体その製造方法及びそれを用いた蛍光ランプ
JPH0531007Y2 (zh) 1990-04-28 1993-08-09
EP0454907A1 (en) * 1990-05-03 1991-11-06 Agfa-Gevaert N.V. Reproduction of x-ray images with photostimulable phosphor
JPH087614Y2 (ja) 1990-05-08 1996-03-04 中部電力株式会社 ワイヤキャップ
KR930006932B1 (ko) 1990-05-11 1993-07-24 삼성전관 주식회사 녹색발광 형광체 및 그것을 사용한 브라운관
JPH04137570A (ja) * 1990-09-27 1992-05-12 Sanyo Electric Co Ltd 発光ダイオードランプ
DE9013615U1 (zh) * 1990-09-28 1990-12-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De
JP2784255B2 (ja) 1990-10-02 1998-08-06 日亜化学工業株式会社 蛍光体及びそれを用いた放電ランプ
JPH0463162U (zh) * 1990-10-02 1992-05-29
JPH0463163U (zh) 1990-10-04 1992-05-29
JPH04280664A (ja) 1990-10-18 1992-10-06 Texas Instr Inc <Ti> 半導体装置用リードフレーム
FR2668464B1 (fr) 1990-10-25 1993-01-08 Commissariat Energie Atomique Silicates mixtes d'yttrium et de lanthanide et laser utilisant des monocristaux de ces silicates.
JPH04175265A (ja) * 1990-11-07 1992-06-23 Sumitomo Electric Ind Ltd 着色透光性ｙａｇ焼結体及びその製造方法
JPH04186679A (ja) 1990-11-16 1992-07-03 Daido Steel Co Ltd 発光ダイオード
JPH04234482A (ja) * 1990-12-28 1992-08-24 Matsushita Electron Corp 蛍光高圧水銀灯
JPH04234481A (ja) 1990-12-28 1992-08-24 Matsushita Electron Corp 蛍光高圧水銀灯
US5164041A (en) 1991-01-04 1992-11-17 At&T Bell Laboratories Method of growing rare earth doped orthosilicates(ln2-xrexsio5)
JP2557745B2 (ja) 1991-01-30 1996-11-27 三洋電機株式会社 光半導体装置
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5309070A (en) 1991-03-12 1994-05-03 Sun Sey Shing AC TFEL device having blue light emitting thiogallate phosphor
JP3209233B2 (ja) * 1991-05-20 2001-09-17 日亜化学工業株式会社 青色発光ダイオードおよびその製造方法
US5202777A (en) 1991-05-31 1993-04-13 Hughes Aircraft Company Liquid crystal light value in combination with cathode ray tube containing a far-red emitting phosphor
FR2677659B1 (fr) 1991-06-14 1994-09-30 Hoechst France Composition fluide luminescente polymerisable et son application.
JP2531500Y2 (ja) 1991-06-19 1997-04-02 花王株式会社 ディスクカートリッジ
MY110582A (en) * 1991-09-03 1998-08-29 Kasei Optonix Rare earth oxysulfide phosphor and hight resolution cathode ray tube employing it.
JPH0531007U (ja) * 1991-10-02 1993-04-23 シンロイヒ株式会社 インテリア照明装置
JP2666228B2 (ja) 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JPH05152609A (ja) * 1991-11-25 1993-06-18 Nichia Chem Ind Ltd 発光ダイオード
US5208462A (en) 1991-12-19 1993-05-04 Allied-Signal Inc. Wide bandwidth solid state optical source
DE69218387T2 (de) 1992-01-07 1997-09-18 Philips Electronics Nv Niederdruckquecksilberentladungslampe
JPH0563068U (ja) 1992-01-31 1993-08-20 シャープ株式会社 樹脂封止型発光体
DE4242842C2 (de) 1992-02-14 1999-11-04 Sharp Kk Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung
JPH05240959A (ja) 1992-02-28 1993-09-21 Toshiba Corp 核医学診断装置
JPH05251717A (ja) 1992-03-04 1993-09-28 Hitachi Ltd 半導体パッケージおよび半導体モジュール
JPH0574875U (ja) 1992-03-16 1993-10-12 凸版印刷株式会社 コードマークを有する印刷体
JPH05315652A (ja) 1992-04-02 1993-11-26 Nec Corp 光半導体装置
JPH05315653A (ja) 1992-05-08 1993-11-26 Denki Kagaku Kogyo Kk マトリックス表示板
JP3113391B2 (ja) 1992-05-12 2000-11-27 シチズン時計株式会社 半導体不揮発性記憶素子の製造方法
JPH05318276A (ja) 1992-05-20 1993-12-03 Mitsubishi Electric Corp 軸受機構冷却装置
JP3338473B2 (ja) 1992-05-26 2002-10-28 シャープ株式会社 光学装置の製造方法
JPH05335624A (ja) 1992-05-29 1993-12-17 Hitachi Ltd Ｓｉ発光装置およびその作製方法
JPH05347432A (ja) 1992-06-15 1993-12-27 Sharp Corp 半導体発光素子
JP2917742B2 (ja) 1992-07-07 1999-07-12 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子とその製造方法
JPH0637202A (ja) 1992-07-20 1994-02-10 Mitsubishi Electric Corp マイクロ波ｉｃ用パッケージ
JPH0653554A (ja) * 1992-07-28 1994-02-25 Rohm Co Ltd 光半導体デバイス
JPH0623195U (ja) * 1992-07-29 1994-03-25 シンロイヒ株式会社 Ｅｌ発光素子
WO1994003931A1 (fr) * 1992-08-07 1994-02-17 Asahi Kasei Kogyo Kabushiki Kaisha Dispositif semi-conducteur a base de nitrure et fabrication
JPH0669546A (ja) 1992-08-21 1994-03-11 Asahi Chem Ind Co Ltd 発光ダイオード
JPH0677540A (ja) * 1992-08-24 1994-03-18 Sanyo Electric Co Ltd 光半導体装置
JPH06104491A (ja) * 1992-09-17 1994-04-15 Rohm Co Ltd 発光ダイオードランプ
DE69322607T2 (de) 1992-09-23 1999-06-17 Koninkl Philips Electronics Nv Quecksilberniederdruckentladungslampe
CA2108749A1 (en) 1992-10-21 1994-04-22 Romano G. Pappalardo Fluorescent lamp with enhanced phosphor blend
JP2603877Y2 (ja) 1992-10-30 2000-03-27 日星電気株式会社 排紙ガイド
JPH083549Y2 (ja) 1992-11-02 1996-01-31 株式会社富士ピー・エス 充填材による非鉄線材固着具
JP3274907B2 (ja) 1992-11-20 2002-04-15 日亜化学工業株式会社 窒化インジウムガリウム化合物半導体の成長方法
US5578839A (en) 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
GB9224529D0 (en) 1992-11-24 1993-01-13 Tioxide Group Services Ltd Coated titanium dioxide
JP2875124B2 (ja) 1992-11-26 1999-03-24 シャープ株式会社 半導体発光素子およびその製造方法
US5382856A (en) 1992-12-09 1995-01-17 General Electric Co. Generator rotor collector terminal stud hydrogen seal
US5643674A (en) 1992-12-18 1997-07-01 E. I. Du Pont De Nemours And Company Luminescent materials prepared by coating luminescent compositions onto substrate particles
US5382452A (en) * 1992-12-18 1995-01-17 E. I. Du Pont De Nemours And Company Luminescent materials prepared by coating luminescent compositions onto substrate particles
JP2739803B2 (ja) * 1992-12-25 1998-04-15 富士ゼロックス株式会社 無機薄膜ｅｌ素子
US5625255A (en) 1992-12-25 1997-04-29 Fuji Xerox Co., Ltd. Inorganic thin film electroluminescence device
JP2711205B2 (ja) 1993-01-20 1998-02-10 鐘紡株式会社 複合発泡ポリエステルシート
KR100284328B1 (ko) 1993-02-11 2001-04-02 김순택 혼합 녹색발광 형광체 및 이를 사용한 음극선관
MY109224A (en) 1993-02-11 1996-12-31 Samsung Display Devices Co Ltd Mixed blue emitting phosphor.
JPH06314593A (ja) * 1993-03-05 1994-11-08 Japan Synthetic Rubber Co Ltd エレクトロルミネッセンス素子
JPH0669546U (ja) 1993-03-17 1994-09-30 株式会社イナックス 水栓ハンドルの取付構造
JPH06279568A (ja) 1993-03-29 1994-10-04 Hitachi Chem Co Ltd エポキシ樹脂組成物及びそれを用いた光半導体装置
DE4311197A1 (de) 1993-04-05 1994-10-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle
JP2512534Y2 (ja) 1993-04-15 1996-10-02 隆夫 津久井 自動改札用定期券入
JPH06306356A (ja) 1993-04-22 1994-11-01 Mitsubishi Cable Ind Ltd 被覆蛍光体の製造方法
JP2894921B2 (ja) 1993-04-30 1999-05-24 シャープ株式会社 半導体装置およびその製造方法
JPH073155U (ja) * 1993-06-15 1995-01-17 スタンレー電気株式会社 Ｌｅｄランプ
US5379186A (en) 1993-07-06 1995-01-03 Motorola, Inc. Encapsulated electronic component having a heat diffusing layer
JPH0742152A (ja) 1993-07-29 1995-02-10 Hitachi Constr Mach Co Ltd パイルハンマ
JPH07121123A (ja) * 1993-08-31 1995-05-12 Sanyo Electric Co Ltd 表示装置
JPH0799345A (ja) * 1993-09-28 1995-04-11 Nichia Chem Ind Ltd 発光ダイオード
JPH0831622B2 (ja) 1993-09-29 1996-03-27 ローム株式会社 発光表示器の製造方法
BE1007825A5 (fr) * 1993-12-15 1995-10-31 Niezen Michel Dispositif lumineux.
JPH07177302A (ja) 1993-12-17 1995-07-14 Matsushita Electric Ind Co Ltd イメージセンサ
JPH07176794A (ja) 1993-12-17 1995-07-14 Nichia Chem Ind Ltd 面状光源
JPH07193282A (ja) * 1993-12-27 1995-07-28 Mitsubishi Materials Corp 指向性の少ない赤外可視変換発光ダイオード
JPH07193281A (ja) * 1993-12-27 1995-07-28 Mitsubishi Materials Corp 指向性の少ない赤外可視変換発光ダイオード
CN2184257Y (zh) 1994-02-21 1994-11-30 中国科学院半导体研究所 半导体光发射与探测耦合组件
JP3425465B2 (ja) 1994-03-03 2003-07-14 化成オプトニクス株式会社 緑色発光蛍光体及びそれを用いた陰極線管
JPH07242869A (ja) 1994-03-04 1995-09-19 Mitsui Mining & Smelting Co Ltd 薄膜エレクトロルミネッセンス素子
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JPH07253348A (ja) 1994-03-14 1995-10-03 Kansei Corp 液面検知センサ
US5666031A (en) 1994-03-16 1997-09-09 Osram Sylvania Inc. Neon gas discharge lamp and method of pulsed operation
JPH0735158Y2 (ja) 1994-03-17 1995-08-09 株式会社大金製作所 トルクコンバータのロックアップダンパー装置
JPH07263147A (ja) * 1994-03-24 1995-10-13 Fuji Electric Co Ltd 薄膜発光素子
US5432358A (en) 1994-03-24 1995-07-11 Motorola, Inc. Integrated electro-optical package
JPH07273366A (ja) 1994-03-28 1995-10-20 Pioneer Electron Corp Ｉｉｉ族窒化物発光素子の製造方法
JP3261853B2 (ja) 1994-03-29 2002-03-04 凸版印刷株式会社 反射型液晶表示装置
JPH07268320A (ja) 1994-03-31 1995-10-17 Tokyo Kagaku Kenkyusho:Kk アルミン酸塩系蛍光体
JP2596709B2 (ja) * 1994-04-06 1997-04-02 都築 省吾 半導体レーザ素子を用いた照明用光源装置
JPH07292354A (ja) 1994-04-28 1995-11-07 Futaba Corp 蛍光体及びその製造方法
NL9400766A (nl) 1994-05-09 1995-12-01 Euratec Bv Werkwijze voor het inkapselen van een geintegreerde halfgeleiderschakeling.
JPH07335153A (ja) * 1994-06-06 1995-12-22 Ise Electronics Corp 蛍光表示管
US5665793A (en) 1994-06-09 1997-09-09 Anders; Irving Phosphorescent highway paint composition
JP3116727B2 (ja) * 1994-06-17 2000-12-11 日亜化学工業株式会社 面状光源
DE69505381T2 (de) 1994-06-24 1999-04-08 Ici Plc Geschäumte formteile aus styrol - und acryl - polymer - zusammensetzung
EP0691798A3 (en) * 1994-07-05 1996-07-17 Ford Motor Co Fluorescent electroluminescent lamp
JPH0832112A (ja) * 1994-07-20 1996-02-02 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
KR100291911B1 (ko) * 1994-07-26 2001-09-17 김순택 반도체발광소자를이용한표시소자
JPH0863119A (ja) 1994-08-01 1996-03-08 Motorola Inc 単色ｌｅｄを用いた全色画像表示装置
JPH0864860A (ja) * 1994-08-17 1996-03-08 Mitsubishi Materials Corp 色純度の高い赤外可視変換青色発光ダイオード
JP2639356B2 (ja) * 1994-09-01 1997-08-13 日本電気株式会社 薄膜トランジスタの製造方法
DE4432035A1 (de) 1994-09-09 1996-03-14 Philips Patentverwaltung Beschichtungsverfahren für Lumineszenzpulver, Luminenzenzpulver und beschichteter Gegenstand
JPH0883686A (ja) 1994-09-09 1996-03-26 Nippon Hoso Kyokai <Nhk> 薄膜発光素子
JP2795194B2 (ja) 1994-09-22 1998-09-10 株式会社デンソー エレクトロルミネッセンス素子とその製造方法
JPH08100173A (ja) * 1994-09-30 1996-04-16 Idemitsu Kosan Co Ltd 白色蛍光変換膜及びそれを用いた白色発光素子
US5543657A (en) 1994-10-07 1996-08-06 International Business Machines Corporation Single layer leadframe design with groundplane capability
JPH08119631A (ja) * 1994-10-21 1996-05-14 Shin Etsu Chem Co Ltd 球状希土類元素酸化物およびその前駆体の製造方法
JPH08130329A (ja) * 1994-10-31 1996-05-21 Nichia Chem Ind Ltd Ｌｅｄ照明
JPH08170077A (ja) 1994-12-19 1996-07-02 Hitachi Ltd 蛍光体、その製造方法、発光スクリーン及びそれを用いた陰極線管
JP3260995B2 (ja) 1994-12-28 2002-02-25 ワイケイケイ株式会社 蓄光性合成樹脂材料及びその製造方法並びに成形品
DK171579B1 (da) 1995-01-18 1997-01-27 Rasmussen Kann Ind As Endestopmekanisme til en elektrisk drevet vinduesafskærmningsindretning
JPH08198585A (ja) 1995-01-20 1996-08-06 Super Tool:Kk クレーン
US5554600A (en) 1995-01-20 1996-09-10 Eli Lilly And Company Methods for inhibiting endometriosis
DE69603575T2 (de) * 1995-01-25 2000-02-17 Northern Engraving Corp Fluoreszierende tinte und fluoreszierende anzeigevorrichtung
JPH08231681A (ja) 1995-02-28 1996-09-10 Asahi Chem Ind Co Ltd 接着性付与剤
JP3573517B2 (ja) 1995-03-09 2004-10-06 三井化学株式会社 感圧記録用顕色剤組成物および感圧記録シート
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
JPH08279627A (ja) 1995-04-07 1996-10-22 Showa Denko Kk 発光素子
US5685071A (en) 1995-06-05 1997-11-11 Hughes Electronics Method of constructing a sealed chip-on-board electronic module
US5601751A (en) 1995-06-08 1997-02-11 Micron Display Technology, Inc. Manufacturing process for high-purity phosphors having utility in field emission displays
JPH0927642A (ja) * 1995-07-13 1997-01-28 Clarion Co Ltd 照明装置
JPH0928642A (ja) 1995-07-24 1997-02-04 East Japan Railway Co 高所清掃装置
DE19528758C1 (de) 1995-08-04 1996-12-05 Siemens Ag Leuchtstoffkeramik, Verfahren zur Herstellung und Verwendung
WO1997008356A2 (en) 1995-08-18 1997-03-06 The Regents Of The University Of California Modified metalorganic chemical vapor deposition of group iii-v thin layers
US5798537A (en) 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
JP3931355B2 (ja) 1995-09-06 2007-06-13 日亜化学工業株式会社 面状光源
JPH0981010A (ja) 1995-09-14 1997-03-28 Canon Inc 画像複写装置及びファクシミリ装置
US6140040A (en) 1995-10-06 2000-10-31 Advanced Minerals Corporation Method of mechanically separating microparticles suspended in fluids using particulate media
US5635110A (en) 1995-10-25 1997-06-03 Micron Display Technology, Inc. Specialized phosphors prepared by a multi-stage grinding and firing sequence
US5788881A (en) 1995-10-25 1998-08-04 Micron Technology, Inc. Visible light-emitting phosphor composition having an enhanced luminescent efficiency over a broad range of voltages
JPH09125056A (ja) 1995-11-02 1997-05-13 Hitachi Chem Co Ltd 表面処理された蛍光体及びその製造法
JP3267250B2 (ja) 1995-12-06 2002-03-18 日亜化学工業株式会社 窒化物半導体発光素子
US6117294A (en) * 1996-01-19 2000-09-12 Micron Technology, Inc. Black matrix material and methods related thereto
JP2927229B2 (ja) 1996-01-23 1999-07-28 ヤマハ株式会社 メドレー演奏装置
DE29724381U1 (de) 1996-03-15 2001-02-22 Asahi Optical Co Ltd Datenaufbelichtungseinheit für eine Kamera
US6600175B1 (en) * 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
WO1997048138A2 (en) * 1996-06-11 1997-12-18 Philips Electronics N.V. Visible light emitting devices including uv-light emitting diode and uv-excitable, visible light emitting phosphor, and method of producing such devices
JPH1012925A (ja) * 1996-06-21 1998-01-16 Susumu Sato 蛍光体付き発光ダイオード
DE19625622A1 (de) 1996-06-26 1998-01-02 Siemens Ag Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
KR20040111701A (ko) * 1996-06-26 2004-12-31 지멘스 악티엔게젤샤프트 발광 변환 소자를 포함하는 발광 반도체 소자
US6608332B2 (en) 1996-07-29 2003-08-19 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device and display
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JP2927279B2 (ja) 1996-07-29 1999-07-28 日亜化学工業株式会社 発光ダイオード
JP3338616B2 (ja) 1996-09-05 2002-10-28 富士通株式会社 蛍光体層の形成方法及び蛍光体ペースト
US6613247B1 (en) 1996-09-20 2003-09-02 Osram Opto Semiconductors Gmbh Wavelength-converting casting composition and white light-emitting semiconductor component
US5772916A (en) 1996-10-15 1998-06-30 Liberty Technologies, Inc. Phosphor screen, method of producing the same, and method for preparing a phosphor powder for producing a phosphor screen
DE19645035C1 (de) 1996-10-31 1998-04-30 Siemens Ag Mehrfarbiges Licht abstrahlende Bildanzeigevorrichtung
JP3522990B2 (ja) * 1996-11-13 2004-04-26 信越化学工業株式会社 イットリア球状微粒子の製造方法
WO1998037165A1 (en) 1997-02-24 1998-08-27 Superior Micropowders Llc Oxygen-containing phosphor powders, methods for making phosphor powders and devices incorporating same
JP3433038B2 (ja) 1997-02-24 2003-08-04 株式会社東芝 半導体発光装置
US5813753A (en) 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
US5813752A (en) 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters
US5847507A (en) 1997-07-14 1998-12-08 Hewlett-Packard Company Fluorescent dye added to epoxy of light emitting diode lens
US5875052A (en) 1997-09-05 1999-02-23 North Carolina State University Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6085971A (en) * 1998-07-10 2000-07-11 Walter Tews Luminescent meta-borate substances
US6058971A (en) * 1998-08-31 2000-05-09 Seychelle Environmental Technologies, Inc. Quick-connect diverter valve
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
JP4110236B2 (ja) 1998-12-28 2008-07-02 富士フイルム株式会社 Ｃｃｄ撮像デバイス及びその駆動方法、並びにフイルムスキャナー
US6614059B1 (en) 1999-01-07 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device with quantum well
US6295750B1 (en) 1999-07-06 2001-10-02 Beckett Publications, Inc. System for displaying cards
CN1108819C (zh) 1999-11-12 2003-05-21 清华大学 抗变异－表位疫苗的制备方法
US6455213B1 (en) 2000-01-04 2002-09-24 Lg Electronics, Inc. Method for manufacturing phosphor layer for image display apparatus
DE10036940A1 (de) 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
US6483234B1 (en) 2000-08-30 2002-11-19 Koninklijke Philips Electronics N.V. Single-component arctic bright calcium halophosphate phosphor
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
US6593055B2 (en) * 2001-09-05 2003-07-15 Kodak Polychrome Graphics Llc Multi-layer thermally imageable element
TWI226357B (en) * 2002-05-06 2005-01-11 Osram Opto Semiconductors Gmbh Wavelength-converting reaction-resin, its production method, light-radiating optical component and light-radiating semiconductor-body
US6692659B2 (en) * 2002-05-31 2004-02-17 General Electric Company Phosporescent polycarbonate, concentrate and molded articles
JP4128564B2 (ja) 2004-04-27 2008-07-30 松下電器産業株式会社 発光装置
KR100666265B1 (ko) 2004-10-18 2007-01-09 엘지이노텍 주식회사 형광체 및 이를 이용한 발광소자
US7501753B2 (en) 2005-08-31 2009-03-10 Lumination Llc Phosphor and blends thereof for use in LEDs
JP4142070B2 (ja) 2006-06-23 2008-08-27 信越ポリマー株式会社 キャリアテープの製造方法
JP2008064860A (ja) 2006-09-05 2008-03-21 Toppan Printing Co Ltd カラーフィルターの描画方法及び描画装置

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098588B2 (en) 1999-12-30 2006-08-29 Osram Opto Semiconductors Gmbh Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source
US7534634B2 (en) 1999-12-30 2009-05-19 Osram Gmbh Surface-mountable light-emitting diode light source and method of producing a light-emitting diode light source
CN100375299C (zh) * 1999-12-30 2008-03-12 奥斯兰姆奥普托半导体有限责任公司 可表面装配的发光二极管光源和制造发光二极管光源的方法
US6936852B2 (en) 2000-07-31 2005-08-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
CN100336233C (zh) * 2001-10-31 2007-09-05 奥斯兰姆奥普托半导体有限责任公司 光电元件
CN100405620C (zh) * 2002-06-13 2008-07-23 美商克立股份有限公司 饱和型磷光体固态发射器
CN100389502C (zh) * 2002-07-12 2008-05-21 斯坦雷电气株式会社 发光二极管
CN100416869C (zh) * 2002-09-30 2008-09-03 奥斯兰姆奥普托半导体有限责任公司 发射射线的半导体器件及其制造方法
CN1327579C (zh) * 2002-10-03 2007-07-18 夏普株式会社 发光装置
US7696690B2 (en) 2002-12-25 2010-04-13 Japan Science And Technolgoy Agency Short-wavelength light-emitting element arranged in a container with a window having a window board formed of a calcium fluoride crystals
CN100358164C (zh) * 2003-08-12 2007-12-26 斯坦雷电气株式会社 波长变换型发光二极管
CN100400961C (zh) * 2003-09-05 2008-07-09 日亚化学工业株式会社 用于交通工具的发光设备
CN100377370C (zh) * 2003-11-22 2008-03-26 鸿富锦精密工业（深圳）有限公司 发光二极管和面光源装置
CN100440555C (zh) * 2004-04-28 2008-12-03 松下电器产业株式会社 发光装置及其制造方法
CN1937270B (zh) * 2005-09-22 2010-08-25 三洋电机株式会社 发光装置
CN101300687B (zh) * 2005-10-28 2010-10-06 飞利浦拉米尔德斯照明设备有限责任公司 在led上层压包含磷光体的密封剂膜
CN101356656B (zh) * 2006-01-04 2011-01-26 罗姆股份有限公司 薄型发光二极管灯及其制造方法
CN100565000C (zh) * 2008-08-11 2009-12-02 山东华光光电子有限公司 利用yag透明陶瓷制备白光led的方法
CN102022643A (zh) * 2009-09-18 2011-04-20 松下电工株式会社 发光装置
CN103582689A (zh) * 2011-04-12 2014-02-12 皇家飞利浦有限公司 具有大于80的cri的发光转换器、磷光增强光源或灯具

Also Published As

Publication number Publication date
DE29724543U1 (de) 2002-02-28
US20050161694A1 (en) 2005-07-28
EP1439586B1 (de) 2014-03-12
DE29724848U1 (de) 2004-09-30
EP2270876A1 (de) 2011-01-05
KR100662955B1 (ko) 2006-12-28
JP4388940B2 (ja) 2009-12-24
EP0907969B1 (de) 2004-05-26
JP2005252293A (ja) 2005-09-15
US20010030326A1 (en) 2001-10-18
US20080149958A1 (en) 2008-06-26
CN1534802B (zh) 2010-05-26
JP2005286342A (ja) 2005-10-13
EP1441396A3 (de) 2005-07-06
US7345317B2 (en) 2008-03-18
EP1441396B1 (de) 2011-06-01
EP0907969A1 (de) 1999-04-14
JP2009065194A (ja) 2009-03-26
JP2008060595A (ja) 2008-03-13
US20010002049A1 (en) 2001-05-31
US6576930B2 (en) 2003-06-10
EP1441395B1 (de) 2011-10-12
JP2000512806A (ja) 2000-09-26
KR20040111700A (ko) 2004-12-31
EP2270877B1 (de) 2013-09-11
JP4334497B2 (ja) 2009-09-30
US7151283B2 (en) 2006-12-19
KR100629544B1 (ko) 2006-09-27
KR20050053798A (ko) 2005-06-08
KR20060079262A (ko) 2006-07-05
EP1439586A2 (de) 2004-07-21
JP4278479B2 (ja) 2009-06-17
JP4308620B2 (ja) 2009-08-05
KR20050053797A (ko) 2005-06-08
US20010000622A1 (en) 2001-05-03
JP2004031989A (ja) 2004-01-29
US6812500B2 (en) 2004-11-02
KR20040111696A (ko) 2004-12-31
EP1441395A3 (de) 2005-07-06
EP2282354A1 (de) 2011-02-09
EP2282354B1 (de) 2013-09-11
US7126162B2 (en) 2006-10-24
DE59713024D1 (de) 2010-01-28
KR100751692B1 (ko) 2007-08-23
KR100662956B1 (ko) 2006-12-28
KR20040111699A (ko) 2004-12-31
US20050127385A1 (en) 2005-06-16
EP1441396A2 (de) 2004-07-28
JP5260018B2 (ja) 2013-08-14
US7629621B2 (en) 2009-12-08
EP1441397B1 (de) 2016-08-10
EP1439586A3 (de) 2005-07-06
KR20040111701A (ko) 2004-12-31
WO1997050132A1 (de) 1997-12-31
JP2005260256A (ja) 2005-09-22
JP2007081413A (ja) 2007-03-29
EP1434279A3 (de) 2005-07-06
CN1534802A (zh) 2004-10-06
EP1441397A2 (de) 2004-07-28
DE29724582U1 (de) 2002-07-04
JP2004048069A (ja) 2004-02-12
JP4286104B2 (ja) 2009-06-24
US20100044739A1 (en) 2010-02-25
EP1441395B9 (de) 2012-08-15
CN1264228C (zh) 2006-07-12
EP1993152B1 (de) 2014-05-21
EP2267801B1 (de) 2015-05-27
EP2284912A1 (de) 2011-02-16
KR100702740B1 (ko) 2007-04-03
EP2284912B1 (de) 2013-09-04
JP4001893B2 (ja) 2007-10-31
US9196800B2 (en) 2015-11-24
HK1022564A1 (en) 2000-08-11
EP1441397A3 (de) 2005-07-06
EP1434279A2 (de) 2004-06-30
EP1441395A2 (de) 2004-07-28
KR100643442B1 (ko) 2006-11-10
DE29724847U1 (de) 2004-09-30
JP3773541B2 (ja) 2006-05-10
KR20000022539A (ko) 2000-04-25
JP5630952B2 (ja) 2014-11-26
US20050231953A1 (en) 2005-10-20
KR100734122B1 (ko) 2007-06-29
BR9709998A (pt) 1999-08-10
EP2270877A1 (de) 2011-01-05
KR100537349B1 (ko) 2006-02-28
US20120241779A1 (en) 2012-09-27
EP2270876B1 (de) 2013-09-11
KR20040111697A (ko) 2004-12-31
KR100808749B1 (ko) 2008-02-29
JP4280598B2 (ja) 2009-06-17
EP1993152A2 (de) 2008-11-19
JP2004031988A (ja) 2004-01-29
KR20040111698A (ko) 2004-12-31
CN1534803A (zh) 2004-10-06
EP1993152A3 (de) 2008-12-10
CN1534803B (zh) 2010-05-26
DE59711671D1 (de) 2004-07-01
JP2004111981A (ja) 2004-04-08
BRPI9715293B1 (pt) 2016-11-01
KR20060079263A (ko) 2006-07-05
EP2267801A1 (de) 2010-12-29
BR9709998B1 (pt) 2010-04-20
EP1434279B1 (de) 2009-12-16
JP4001892B2 (ja) 2007-10-31
US7078732B1 (en) 2006-07-18

Similar Documents

Publication Publication Date Title
CN1264228C (zh) 发光半导体器件、全色发光二极管显示装置及其应用
CN100435369C (zh) 具有发光变换元件的发光半导体器件
EP1802728B1 (en) Phosphor and light emitting device using the same
CN101184824A (zh) 发光装置及其所使用的碱土金属硫化物的磷光体
JP5630952B6 (ja) 半導体発光素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: OSRAM OPTO SEMICONDUCTOR COMPANY LIMITED PARTENER

Free format text: FORMER OWNER: AO SI LAN MU PU TUO SEMICONDUCTOR CO., LTD.

Effective date: 20021212

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20021212

Address after: Regensburg, Germany

Applicant after: Siemens AG

Address before: Regensburg, Germany

Applicant before: Oswald, Aupu, semiconductor, Limited by Share Ltd

C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH + CO. OHG

Free format text: FORMER NAME: SIEMENS AG

CP01 Change in the name or title of a patent holder

Address after: Regensburg, Germany

Patentee after: Osram Opto Semiconductors GmbH & Co. OHG

Address before: Regensburg, Germany

Patentee before: Siemens AG

ASS Succession or assignment of patent right

Owner name: OSRAM AG

Free format text: FORMER OWNER: OSRAM OPTO SEMICONDUCTORS GMBH + CO. OHG

Effective date: 20111230

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20111230

Address after: Munich, Germany

Patentee after: Patra Patent Treuhand

Address before: Regensburg, Germany

Patentee before: Osram Opto Semiconductors GmbH & Co. OHG

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20060712