CN1190491A - 带有氮化镓有源层的双异质结发光二极管 - Google Patents

带有氮化镓有源层的双异质结发光二极管 Download PDF

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CN1190491A
CN1190491A CN96193819A CN96193819A CN1190491A CN 1190491 A CN1190491 A CN 1190491A CN 96193819 A CN96193819 A CN 96193819A CN 96193819 A CN96193819 A CN 96193819A CN 1190491 A CN1190491 A CN 1190491A
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CN1156028C (zh
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约汉·亚当·埃德蒙德
康华双
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Wolfspeed Inc
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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
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    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Abstract

发光二极管的双异质结构,包括:具有第一导电类型的铝镓氮层;具有相反导电类型的铝镓氮层;和在铝镓氮层之间的氮化镓有源层,氮化镓层用Ⅱ族受主和Ⅳ族施主一起掺杂,其中一种掺杂剂的量足以使氮化镓层有明确导电类型,有源层与有相反导电类型的相邻铝镓氮层形成p－n结。

Description

带有氮化镓有源层的双异质结发光二极管
本发明涉及发光二极管，具体涉及由有足够宽的带隙的半导体材料形成以在可见光光谱的兰光部分发光的发光二极管。
发光二极管(LED)是光电子半导体器件。光电子半导体器件分为三类：将电能转换为光辐射的器件(LED和二极管激光器)，探测光信号的器件(光电探测器)，和将光能转换为电能的器件(光电器件或太阳能电池)。
尽管这三类器件都很有用，但由于LED可应用于例如科学仪器、医疗设备、或更普通的各种用户产品和应用，其中LED用作各种信号、指示器、量规、钟表等的光源以及许多其它类似应用，所以LED受到更普遍地认可。
如LED的半导体光源长寿命、低功耗和高可靠性，特别需要它作为光输出器件。
尽管有广泛用途，但LED的应用也受到某种程度的限制，因为能生产的LED的颜色从根本上受到形成LED的半导体材料特性的限制。本领域的普通技术人员都知道，LED产生的光称为“电致发光”，它代表在所加电场下电流通过材料时产生的光。任何给定的产生电致发光的材料在给定的条件下有相对窄的波长范围。因此电致发光和热辐射或白炽光不一样，不象它们那样有更宽的光谱宽度。
更基本地，LED的发光是由半导体材料中各能级间的基本量子力学跃迁所产生的。因为材料的带宽取决于材料本身及其掺杂，跃迁能量及由此产生的辐射的颜色由众所周知的跃迁能量(E)与所产生的光的频率(v)之间的关系(E＝hv)来决定(h为普朗克常数)。在可见光光谱中，兰光比其他颜色的光有更短的波长(或更高的频率)，由此必须由比产生绿、黄、橙或红光的跃迁能量更高的跃迁来产生。
更具体地，整个可见光光谱从约390纳米的紫光到约770纳米的红光。所以可见光的兰光部分可以认为(有点人为地)在约425到480纳米波长范围内。425到480纳米波长范围内代表约2.6eV到2.9eV的能量跃迁(同样有点人为地)。因此，即使在最佳条件下，也只有带隙至少约大于2.6eV的材料才能发兰光。
更为众人所认可的是，兰色是三原色之一，因此任何希望用LED产生的全色显示器件都多少需要兰色。由于缺少有效的兰色LED，在无兰色LED源的显示器中，必须用如过滤或遮闭等其他方法来产生兰光。
从另一角度，兰光的更短波长使它能在光存储器件(如CD ROM)上存储比红或黄光更多的信息。具体地，对于给定物理尺寸的CD ROM，用兰光能存储约八倍于红光所能存储的信息。因此，对于计算机和其他光存储器，使用兰光的益处更吸引人。
有足够带隙以产生兰光的合适材料包括碳化硅、氮化镓、其他III族元素的氮化物、硫化锌和硒化锌。更普通的半导体材料如硅、磷化镓、或砷化镓不适于用来产生兰光，这是因为它们的带隙在2.26eV量级或以下。
近十年来，兰光发光二极管的基础和商业发展取得了很大进步，其中包括很多本发明的受让人的贡献。这些包括美国专利4918497、4966862、5027168、和5338944。
兰光发光二极管的另一合适材料为氮化镓(GaN)，及其类似的III族(即元素周期表中III族)氮化物，如铝镓氮(AlGaN)、铟镓氮(InGaN)、铟铝氮(InAlN)、有时为铟铝镓氮(InAlGaN)。由于这些材料在室温下能有约3.4到6.2eV的直接能带跃迁，所以很有吸引力。对LED和电子跃迁较熟悉的人知道，当价带最高点和导带最低点有相同的K值时，半导体中发生直接(或垂直)跃迁，这意味着在跃迁过程中晶体的动量守恒，这样跃迁产生的能量基本转换为光子，即产生光而不是热。当导带和价带最低点有不同K值时，需要声子(即发射振动能)来使晶体动量保持守恒，此时的跃迁称为“间接”跃迁。声子的能量明显降低所得光子的能量，这样便降低了发射光的频率和强度。Sze在第二版“半导体器件物理”(1981)的第12章的681ff页中，详细讨论了LED的理论和实践。
从较外行的观点来看，在其他因素相同时，与如碳化硅等间接材料的发射相比，包括氮化镓的III族氮化物的直接跃迁特性有可能提供更亮、更有效的发射，由此提供更亮更有效的LED。
因此，最近十年来，人们的兴趣集中在生产氮化镓及相关的III族氮化物的发光二极管。
尽管氮化镓可以在宽带隙上直接跃迁，理论上可以更亮，但该材料在制造工作器件时有很多具体技术难题。主要问题是缺少氮化镓体单晶，这意味着氮化镓或其它的III族氮化物器件必须在其他材料上作为外延层形成。目前最通用的材料为兰宝石(氧化铝，Al2O3)。兰宝石与III族氮化物有可以接受的晶格匹配，而且热稳定性好、透明，这些对生产发光二极管很有用。但是兰宝石有缺点，如不适于导电掺杂。因此，这意味着必须流过LED以产生发射的电流不能直接流过兰宝石衬底。因此必须给LED制备其他类型的连接。通常，由于很多理由LED最好用“垂直”结构(即用导电衬底以便在器件的相对两端作欧姆接触)，包括比“非垂直”器件容易制备。
因此本发明的受让人研制了用碳化硅作氮化镓及其III族氮化物器件的衬底，以解决兰宝石衬底的导电问题。因为碳化硅可以进行导电掺杂，可以在其上形成“垂直”LED；即器件的一个接触可以作在器件的顶面，而另一个接触可以在器件的底面，这样的结构的LED比较容易制备，同时也容易将LED放入电路或与器件或结构结合。
不管这些理论上的优点如何，长期可靠和可预测的用氮化镓作有源层的兰光发射已经实现。例如，有人用硅和锌一起掺杂或补偿铟镓氮(InGaN)，它们的解释是：单独氮化镓以及单独的o不适合于LED，因为InGaN更适于发光二极管的带-带(“带间”)跃迁。
同样，另外一些人制备AlGaN和GaN异质结构，但没有进行或没有说明补偿掺杂，仅说明用本征n型氮化镓和p型AlGaN作结。确实，如果合适地理解一些已有技术的结构，用如锌等补偿受主进行掺杂将得到绝缘层，而不是补偿层。
因此，本发明的目的是提供一种发光二极管，它有氮化镓特性的优点，能产生连续的可预测的发射，并使用补偿有源层。
本发明用发光二极管的双异质结构来实现本发明的目的，所述异质结构包括：有第一导电类型的铝镓氮层；有相反导电类型的铝镓氮层；在所述铝镓氮层之间的氮化镓导电层，所述氮化镓层用II族受主和IV族施主一起掺杂，其中一种掺杂剂的量足以使所述氮化镓层有明确导电类型，用与之有相反导电类型的相邻铝镓氮层形成p-n结。
本发明的另一方案包括双异质结构发光二极管，它发射可见光谱的兰光部分并包括衬底；所述衬底上的缓冲层；及在缓冲层上的本发明的双异质结构。
在本发明的第三方案中，本发明包括制备有源层的方法，该有源层为能发射可见光谱的兰光部分的双异质结构发光二极管的补偿n型氮化镓层。
通过下面参照说明优选实施例的附图进行的详细说明会更明白本发明的其他目的、优点和特性以及实现它们的方法。
图1是本发明发光二极管(LED)的第一实施例的剖面图；
图2是本发明发光二极管(LED)的第二实施例的剖面图；
图3是本发明制备的LED的扫描电子显微镜照片；
图4是本发明LED的输出与电流的关系图；
图5是本发明LED的光谱输出和效率与正向电流的关系图；
图6是铝镓氮(AlxGa1-xN)的归一化光致发光强度与波长的关系图；
图7是在碳化硅上制备的n型氮化镓层的欧姆接触的电流与电压的关系图；
图8与图7相似，但欧姆接触制备在p型氮化镓上；
图9是本发明的LED的电流电压特性图：
图10是碳化硅上的掺镁p型氮化镓的室温光致发光图；
图11是霍尔效应图，它表示n型氮化镓的载流子浓度和电阻率与温度的关系；
图12表示在碳化硅上的掺硅n型氮化镓的迁移率数据；
图13是另一霍尔效应图，表示掺镁氮化镓的空穴浓度和电阻率与温度的关系；
图14表示在碳化硅上的掺镁p型氮化镓的迁移率数据的曲线图。
在最普通的方案中，本发明为双异质结构发光二极管，它包括：有第一导电类型的铝镓氮层；有相反导电类型的铝镓氮层；及在铝镓氮层之间的氮化镓有源层，其中氮化镓层用II族受主和IV族施主一起掺杂，其中一种掺杂剂的量足以使氮化镓层有明确的导电类型，有源层与有相反导电类型的相邻铝镓氮层形成p-n结。
在优选实施例中，本发明是双异质结构发光二极管，其中异质结构包括：p型铝镓氮层；n型铝镓氮层；及在铝镓氮层之间的氮化镓n型层。氮化镓层用锌和硅一起掺杂，以便与p型铝镓氮层形成p-n结。
双异质结构比同质结或单异质结构有很多优点。包括因为GaN和AlGaN之间的不同折射率所导致的增强的发射，更有效的载流子限制从而导致更有效的载流子复合和使LED的输出更亮。
在优选实施例中，如图1的20所示，发光二极管有双异质结构。如图1所示的双异质结构发光二极管20发射可见光谱的兰光部分，并包括：最好由碳化硅形成的衬底21，该碳化硅已充分掺杂以给图1所示的垂直结构LED20提供导电衬底。为了与衬底21上的缓冲层和铝镓氮层的晶体结构匹配，碳化硅衬底最好具有选自6H或4H碳化硅的多型。
熟悉这些材料的人知道，4H或6H为碳化硅的两种六方晶体形式，在其上形成的氮化镓(和其他III族氮化物)也为六方多型晶体。但是如果用立方(即3C)碳化硅作衬底，氮化镓也可形成立方结构。
LED 20还包括在衬底21上的缓冲层22。在美国专利5393993中说明了合适的缓冲层。该缓冲结构在碳化硅衬底和LED 20的双异质结构部分之间提供了合适的晶体和电子跃迁。
在一个实施例中，缓冲层包括：第一层氮化镓和氮化铝；与第一层邻近的第二层氮化镓和氮化铝。在所述第二层中氮化铝的摩尔百分比与第一层中的摩尔百分比很不同。
在另一个实施例中，缓冲层包括导电层，它选自：氮化镓；氮化铝；氮化铟；AxB1-xN形式的三元III族氮化物，其中A和B为III族元素，x为0、1、或0与1之间的小数；  AxByC1-x-yN形式的四元III族氮化物，其中A、B和C为III族元素，x和y为0、1、或0与1之间的小数，且(x+y)小于等于1；及碳化硅与这些三元、四元III族氮化物的合金。
在又一个实施例中，缓冲层包括在衬底上的第一层，它由渐变组分的碳化硅铝镓氮形成，其中邻近衬底的部分基本为纯碳化硅，而离衬底最远的部分基本为纯铝镓氮，在中间的是从碳化硅到铝镓氮的逐步渐变部分。第二层可以加到第一层上，该第二层可以由渐变组分的铝镓氮形成。
在优选实施例中，LED 20还包括在缓冲层22上的n型氮化镓外延层23，它提供额外的衬底、缓冲层和异质结构之间的晶格过渡。
LED 20还包括图1中括号24表示的双异质结构，双异质结构24包括n型铝镓氮层25，当n型氮化镓外延层23包括在结构中时，该异质结构在n型氮化镓外延层23上。n型铝镓氮层25有AlxGa1-xN的形式，其中x代表铝的摩尔份数，x小于1并大于0(1＞x＞0)。在优选实施例中，摩尔份数x在约0.05和2.0间，在最优选的实施例中，摩尔份数x约为0.1。铝镓氮层25还有约2E18的净掺杂浓度，在最优实施例中用硅掺杂。如同已有技术中一样，“E”为掺杂浓度的简写指数符号，所以2E18代表2×1018cm-3。
双异质结构24包括在n型铝镓氮层25上的氮化镓有源层26，和前面一样，它用II族受主和IV族施主补偿，其中优选的H族受主为锌或钙或镁，碳可以为IV族施主。优选的IV族施主为硅或锗。在最优选实施例中，II族受主为锌，IV族施主为硅，和对于许多其他附图说明的产生特征兰光发射的实施例一样。有源层26的净掺杂浓度为约1E18和4E18之间，最好为2E18。
用有AlxGa1-xN形式的p型铝镓氮层27来完成双异质结构，这里x小于1大于0(1＞x＞0)，优选摩尔份数x也在约0.05到2.0之间，最好约为0.1。
在优选实施例中，LED 20还可以包括异质结构的顶层p型层27上的p型氮化镓层30。p型层27有约1E19的净掺杂浓度，且最好掺铝。
如图1所示的LED 20还包括衬底的各欧姆接触层31和顶层的欧姆接触层32，在图1实施例中，顶层即p型氮化镓层30。但是应该明白，在不包括p型氮化镓层30的实施例中，欧姆接触层32直接制备在双异质结构的p型铝镓氮层27上。
图1还表明，在优选实施例中，接触32包括钛和金的键合焊盘。在最优选的实施例中，用一层金(Au)重叠在薄层钛(Ti)上形成接触。在一优选实施例中，用延伸穿过LED 20的顶表面较大部分的透明欧姆接触33来完成基本接触32，以帮助电流的分布并由此增加亮度。
对碳化硅衬底的优选欧姆接触包括镍，但也可以包括其他合适金属或如镍-矾的金属复合物。
当在p-n结上加典型LED电流(例如10到40毫安)时，该p-n结由异质结构的铝镓氮层27和异质结构24的氮化镓有源层26形成，图1所示的双异质结构发光二极管将持续产生发射，其峰值波长约为430纳米(nm)，半极大值带宽(bandwidth at half maximum)约为65nm。
图2表示本发明的LED 40的稍微不同的实施例，在图2中，衬底用41表示，缓冲层为42，但该实施例中包括绝缘缓冲层。正如前面提到的，缓冲层可以包括美国专利5393993中公开的结构。即缓冲层42可以包括AlGaN层，其接近衬底41的地方基本为氮化铝，然后随镓含量逐渐增加连续渐变，直到与图2中43和图1中的23所表示的n型氮化镓层的地方即渐变层的上表面基本为氮化镓为止。
图2和优选实施例中44所表示的双异质结构包括：n型铝镓氮层45，它对应图1中说明的层25；补偿的n型氮化镓有源层46，它对应图1中说明的氮化镓有源层26；和p型铝镓氮层47，它对应图1中说明的层27。对应图1中说明的层30的p型氮化镓层50在异质结构上，衬底的欧姆接触51和二极管顶层的欧姆接触52和53与图1中说明的31、32和33对应。
但是如图2所示，因为该实施例中的缓冲层42为绝缘层而不是导电层，必须在衬底上的欧姆接触51和二极管顶层上的欧姆接触52和53之间提供电流流动的其他通道。可以通过短路接触54和55来制备该接触，最好形成于铝或钛和铝上，并提供到n型氮化镓层43的欧姆接触。在最优选实施例中，这些短路接触还包括56和57所示的部分，它们直接与n型碳化硅衬底接触，并由钛和镍形成以便与碳化硅形成合适的欧姆接触。
在另一方案中，本发明包括给发射可见光谱的兰光部分的双异质结构发光二极管制备补偿氮化镓有源层的方法。在该方案中，本发明包括：把镓、氮、硅和锌的汽化源引入到化学汽相淀积系统中，该系统包括有适合在其上生长氮化镓的半导体衬底。维持足够高的温度以促进锌和硅补偿氮化镓的外延生长，但是低于氮化镓的分解温度。该领域的普通技术人员都知道，此温度必须足够高以给原子在外延生长表面移动提供所需的能量，在本发明的优选实施例中，该温度通常保持在约800℃到1050℃。
本领域普通技术人员还应该明白，气体流速和具体温度通常取决于所用系统，因此不同于这里所采用的特定温度也在本发明的方法方案之内，因为本领域的普通技术人员不经过实验就可以很容易地根据具体的化学汽相淀积(“CVD”)系统来决定温度。
关于另一个限制因素，最好将温度维持在低于外延层的表面形貌不适于在其上进行进一步的外延的温度。
在优选实施例中，引入镓的汽化源的步骤包括引入三甲基镓，(CH3)3Ga；引入氮的汽化源的步骤包括引入氨气，NH3；引入锌的汽化源的步骤包括引入二乙基锌，(C2H5)2Zn；引入硅的汽化源的步骤包括引入硅烷，SiH4。优选的铝源(对AlGaN层)为三甲基铝，(CH3)3Al；当引入镁时，优选源为双环戊二乙基镁，(C5H5)2Mg。
图3是本发明的LED的SEM照片。该器件有约14mil×14mil的芯片尺寸，有10mil×10mil的台阶部分。衬底约7或8mil厚，n-GaN层(即图1中的23或图2中的43)约3微米厚，异质结构中的层(n-AlGaN、CaN、和p-AlGaN)各约1000埃厚。顶层GaN(即图1中的30和图2中的50)约4000埃厚。
图4-14示出了组成本发明的异质结构和异质结二极管的各层的不同性能。图4表示根据本发明的形成在碳化硅衬底上的氮化镓双异质结构发光二极管的光谱响应与工作电流的关系。图4所示的测量在四个不同的电流下进行，从10到40毫安(mA)。峰值发射波长为430纳米(nm)，半极大值带宽约为60纳米，这是硅和锌补偿氮化镓有源层的特征。
图5表示本发明的发光二极管的功率输出和外量子效率与工作电流之间的关系。在例如LED正常工作电流下(即约20毫安)，输出约为850毫瓦，对应的外量子效率约1.5％。
图6表示在碳化硅衬底上的不同组分的铝镓氮的室温光致发光、为比较还包括了纯氮化镓层的光致发光。在室温下测量的清晰明确的峰表明这些层的晶体质量高。这些光致发光测量是用325纳米波长的10毫瓦的氦/镉激光器激发的。
图7表示根据本发明制备在碳化硅衬底上的n型氮化镓上的欧姆接触的电流电压特性。优选欧姆接触金属为铝，它对于约1018m-3施主浓度的n型氮化镓层有约10-5hm-cm2的接触电阻。
图8是类似的电流电压特性图，表示据本发明制备在碳化硅衬底上的p型氮化镓上的欧姆接触的电流电压特性。优选欧姆接触金属为钛和金的合金，它对于约6E17 p型受主浓度的氮化镓层有约10-2ohm-cm2的接触电阻。
图9是本发明的在碳化硅衬底上的氮化镓双异质结发光二极管的电流电压(I-V)曲线。在反偏时没有探测到漏电流。在正偏下，LED在约2.7伏特开始导通，在20毫安的典型电流下工作电压约为3.7伏。
图10表示碳化硅上掺镁p型氮化镓的室温光致发光。对净掺杂受主浓度为6E17的层，发光峰出现在约435纳米。
图11是霍尔效应数据的部分对数图，表示n型氮化镓的载流子浓度和电阻率与温度的关系，温度绘制成温度的倒数。图11中测量的层用硅掺杂到室温施主浓度约为1.4E18且电阻率为0.06ohm-cm。
图12对应图11中相同的层的数据，但表示该层的迁移率。室温下该层的迁移率约为300cm2/V.s，这样的掺杂水平仍有这样高的迁移率表明层的质量高。
图13是霍尔效应数据图，表示掺镁氮化镓的受主浓度和电阻率与温度(图中为倒数)的关系。室温下该层的净受主浓度约为6E17且电阻率约为1.3ohm-cm。
图14对应图13中相同的层的迁移率数据，表示出室温该层的迁移率约为8cm2/V.s，这是p型氮化镓的典型迁移率值。
在附图和说明书中，公开了本发明的典型优选实施例，尽管使用了一些具体术语，但它们仅仅是为了说明，并非为了进行限制，本发明的范围限制在下面的权利要求书中。

Claims (21)

1.发光二极管的双异质结构，所述异质结构包括：
具有第一导电类型的铝镓氮层；
具有相反导电类型的铝镓氮层；
在所述铝镓氮层之间的氮化镓有源层，所述氮化镓层用II族受主和IV族施主一起掺杂，其中一种掺杂剂的量足以使所述氮化镓有源层有明确导电类型，所述有源层与有相反导电类型的相邻铝镓氮层形成p-n结。
2.如权利要求1的双异质结构，其特征为：所述氮化镓层为n型，所述II族受主为锌，所述IV族施主为硅。
3.发光二极管的双异质结构，所述异质结构包括：
p型铝镓氮层；
n型铝镓氮层；
在所述铝镓氮层之间的n型氮化镓层，所述氮化镓层用锌和硅一起掺杂，并与所述p型铝镓氮层形成p-n结。
4.一种能发射可见光谱的兰光部分的双异质结构发光二极管，包括：
衬底；
在所述衬底上的缓冲层；及
在所述缓冲层上的双异质结构，所述双异质结构包括：
n型铝镓氮层；
在所述n型铝镓氮层上的补偿n型氮化镓有源层；及
在所述氮化镓层上的p型铝镓氮层，所述p型铝镓氮层和所述n型有源层形成p-n结。
5.如权利要求4的双异质结构发光二极管，还包括：与所述衬底和所述p型铝镓氮层各自的欧姆接触。
6.如权利要求4的双异质结构发光二极管，还包括：在所述缓冲层上的n型氮化镓外延层，其中所述异质结构中的所述n型铝镓氮层在所述n型氮化镓外延层上。
7.如权利要求4的双异质结构发光二极管，还包括：在所述异质结构中的所述p型铝镓氮层上的p型氮化镓层；及与所述p型氮化镓层的欧姆接触。
8.如权利要求4的双异质结构发光二极管，其特征为：所述衬底包括导电碳化硅。
9.如权利要求3或4的双异质结构，其特征为：所述n型铝镓氮层有AlxGa1-xN的形式，其中1＞x＞0；所述p型铝镓氮层有AlxGa1-xN的形式，其中1＞x＞0。
10.如权利要求9的双异质结构，其特征为：x约为0.1。
11.如权利要求4的双异质结构发光二极管，其特征为：所述氮化镓层用锌和硅同时掺杂。
12.如权利要求3或4的双异质结构发光二极管，其特征为：所述n型氮化镓层有约1E18到4E18的净掺杂浓度；p型氮化镓层有约1E19的净掺杂浓度；n型铝镓氮层有约2E18的净掺杂浓度。
13.如权利要求4的双异质结构发光二极管，其特征为：所述缓冲层包括：
第一氮化镓和氮化铝层；
邻近所述第一层的第二氮化镓和氮化铝层，其中所述第二层中氮化铝的摩尔百分比与所述第一层中氮化铝的摩尔百分比大不相同。
14.如权利要求4的双异质结构发光二极管，其特征为：所述缓冲层包括：铝镓氮渐变层，在衬底处基本全部为氮化铝，然后随镓含量增加连续渐变，直到在所述双异质结构处在其上表面基本全部为氮化镓为止。
15.如权利要求4的双异质结构发光二极管，其特征为：所述缓冲层包括导电层，它选自：氮化镓；氮化铝；氮化铟；AxB1-xN形式的三元III族氮化物，其中A和B为III族元素，x为0、1、或0与1之间的小数；AxByC1-x-yN形式的四元III族氮化物，其中A、B和C为III族元素，x和y为0、1、或0与1之间的小数，且(x+y)小于等于1；和碳化硅与这些三元、四元III族氮化物的合金。
16.如权利要求4的双异质结构发光二极管，其特征为：所述缓冲层包括在所述衬底上的第一层，它由渐变组分的碳化硅铝镓氮形成，其中邻近衬底的部分基本为纯碳化硅，而离衬底最远的部分基本为纯铝镓氮，在中间的是从碳化硅到铝镓氮的连续渐变部分；
在所述第一层上由渐变组分铝镓氮形成的第二层。
17.如权利要求3或4的双异质结构发光二极管，其特征为：所述氮化镓有源层是II族受主和IV族施主补偿的，II族受主选自锌、钙、镁，IV族施主选自硅、锗或碳。
18.如权利要求4的双异质结构发光二极管，其特征为：所述缓冲层绝缘，还包括在所述衬底与所述双异质结构之间的短路接触。
19.一种给发射可见光谱的兰光部分的发光二极管制备补偿n型氮化镓有源层的方法，包括：
把镓、氮、硅、锌的汽化源引入到化学汽相淀积系统中，该系统包括有适合在其上生长氮化镓的半导体衬底；及同时
维持足够高的温度以促进锌和硅补偿氮化镓的外延生长，但是该温度低于氮化镓的分解温度。
20.如权利要求19的方法，其特征为：温度必须保持低于外延层的表面形貌不容许在其上进行进一步的外延生长的温度。
21.如权利要求19的方法，其特征为：引入镓的汽化源的步骤包括引入三甲基镓；引入氮的汽化源的步骤包括引入氨气；引入锌的汽化源的步骤包括引入二乙基锌；引入硅的汽化源的步骤包括引入硅烷。
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105370B2 (en) 2000-08-31 2006-09-12 Osram Gmbh Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor
CN1305108C (zh) * 2001-07-23 2007-03-14 克里公司 具有成形衬底的发光二极管的结合以及用于结合具有成形衬底的发光二极管的夹头
CN101330123B (zh) * 2007-06-21 2010-06-09 住友电气工业株式会社 Ⅲ族氮化物系半导体发光元件
CN101425556B (zh) * 2004-08-26 2011-12-14 Lg伊诺特有限公司 氮化物半导体发光器件及其制造方法
CN101027784B (zh) * 2004-09-22 2013-08-07 克里公司 高输出第ⅲ族氮化物发光二极管
CN109786484A (zh) * 2018-12-19 2019-05-21 西安电子科技大学 一种双异质结和复合钝化层的impatt二极管及其制作方法

Families Citing this family (361)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267839B1 (ko) * 1995-11-06 2000-10-16 오가와 에이지 질화물 반도체 장치
DE19709861C2 (de) * 1997-03-11 1999-04-01 Vitcon Projektconsult Gmbh Einrichtung zur Ablation von Material mit Hilfe von Laserstrahlung
JPH1140891A (ja) * 1997-07-15 1999-02-12 Nec Corp 窒化ガリウム系半導体発光素子及びその製造方法
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JPH1168158A (ja) * 1997-08-20 1999-03-09 Sanyo Electric Co Ltd 窒化ガリウム系化合物半導体装置
US6825501B2 (en) 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
AU9295098A (en) * 1997-08-29 1999-03-16 Cree Research, Inc. Robust group iii light emitting diode for high reliability in standard packagingapplications
JPH11135834A (ja) * 1997-10-27 1999-05-21 Matsushita Electric Ind Co Ltd 発光ダイオード装置及びその製造方法
US6849862B2 (en) * 1997-11-18 2005-02-01 Technologies And Devices International, Inc. III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer
US6559038B2 (en) 1997-11-18 2003-05-06 Technologies And Devices International, Inc. Method for growing p-n heterojunction-based structures utilizing HVPE techniques
US6599133B2 (en) 1997-11-18 2003-07-29 Technologies And Devices International, Inc. Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques
US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
US20020047135A1 (en) * 1997-11-18 2002-04-25 Nikolaev Audrey E. P-N junction-based structures utilizing HVPE grown III-V compound layers
US6559467B2 (en) * 1997-11-18 2003-05-06 Technologies And Devices International, Inc. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers
US6555452B2 (en) 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
US6479839B2 (en) 1997-11-18 2002-11-12 Technologies & Devices International, Inc. III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
US6476420B2 (en) * 1997-11-18 2002-11-05 Technologies And Devices International, Inc. P-N homojunction-based structures utilizing HVPE growth III-V compound layers
US6890809B2 (en) * 1997-11-18 2005-05-10 Technologies And Deviles International, Inc. Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
JP4166885B2 (ja) * 1998-05-18 2008-10-15 富士通株式会社 光半導体装置およびその製造方法
TW398084B (en) * 1998-06-05 2000-07-11 Hewlett Packard Co Multilayered indium-containing nitride buffer layer for nitride epitaxy
DE59914269D1 (de) * 1998-09-02 2007-05-03 Siced Elect Dev Gmbh & Co Kg Halbleitervorrichtung mit ohmscher kontaktierung und verfahren zur ohmschen kontaktierung einer halbleitervorrichtung
DE19840248A1 (de) * 1998-09-03 2000-03-16 Fraunhofer Ges Forschung Schaltungschip mit spezifischer Anschlußflächenanordnung
TW386286B (en) * 1998-10-26 2000-04-01 Ind Tech Res Inst An ohmic contact of semiconductor and the manufacturing method
DE19904378B4 (de) 1999-02-03 2006-10-05 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Nitrid-Einkristallen
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) * 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
US6483130B1 (en) 1999-03-24 2002-11-19 Honeywell International Inc. Back-illuminated heterojunction photodiode
US6137123A (en) * 1999-08-17 2000-10-24 Honeywell International Inc. High gain GaN/AlGaN heterojunction phototransistor
EP1104031B1 (en) * 1999-11-15 2012-04-11 Panasonic Corporation Nitride semiconductor laser diode and method of fabricating the same
US8829546B2 (en) 1999-11-19 2014-09-09 Cree, Inc. Rare earth doped layer or substrate for light conversion
JP2001217456A (ja) * 2000-02-03 2001-08-10 Sharp Corp 窒化ガリウム系化合物半導体発光素子
TW497277B (en) * 2000-03-10 2002-08-01 Toshiba Corp Semiconductor light emitting device and method for manufacturing the same
JP3751791B2 (ja) * 2000-03-28 2006-03-01 日本電気株式会社 ヘテロ接合電界効果トランジスタ
US6407411B1 (en) 2000-04-13 2002-06-18 General Electric Company Led lead frame assembly
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
JP5523277B2 (ja) * 2000-04-26 2014-06-18 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光半導体素子並びに発光性半導体素子の製造方法
WO2001084640A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh LUMINESZENZDIODENCHIP AUF DER BASIS VON GaN UND VERFAHREN ZUM HERSTELLEN EINES LUMINESZENZDIODENBAUELEMENTS
US6878563B2 (en) * 2000-04-26 2005-04-12 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
JP2001308460A (ja) * 2000-04-27 2001-11-02 Sharp Corp 窒化物半導体レーザ素子とその光ピックアップ装置
US6510722B1 (en) 2000-05-10 2003-01-28 Advanced Cardiovascular Systems, Inc. Stent crimping tool for producing a grooved crimp
US6495894B2 (en) * 2000-05-22 2002-12-17 Ngk Insulators, Ltd. Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
EP2276059A1 (en) 2000-08-04 2011-01-19 The Regents of the University of California Method of controlling stress in gallium nitride films deposited on substrates
JP3556916B2 (ja) * 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
US6534797B1 (en) 2000-11-03 2003-03-18 Cree, Inc. Group III nitride light emitting devices with gallium-free layers
DE10056475B4 (de) 2000-11-15 2010-10-07 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis mit verbesserter p-Leitfähigkeit und Verfahren zu dessen Herstellung
US6649287B2 (en) 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
US6906352B2 (en) 2001-01-16 2005-06-14 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
USRE46589E1 (en) 2001-01-16 2017-10-24 Cree, Inc. Group III nitride LED with undoped cladding layer and multiple quantum well
US6800876B2 (en) 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
US6794684B2 (en) 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6956250B2 (en) * 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6576932B2 (en) 2001-03-01 2003-06-10 Lumileds Lighting, U.S., Llc Increasing the brightness of III-nitride light emitting devices
US6630689B2 (en) * 2001-05-09 2003-10-07 Lumileds Lighting, U.S. Llc Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
JP3795771B2 (ja) * 2001-06-13 2006-07-12 日本碍子株式会社 Ｅｌｏ用ｉｉｉ族窒化物半導体基板
US7211833B2 (en) * 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
JP4026339B2 (ja) * 2001-09-06 2007-12-26 豊田合成株式会社 ＳｉＣ用電極及びその製造方法
US7145165B2 (en) * 2001-09-12 2006-12-05 Honeywell International Inc. Tunable laser fluid sensor
US7015457B2 (en) * 2002-03-18 2006-03-21 Honeywell International Inc. Spectrally tunable detector
US20070133001A1 (en) * 2001-09-12 2007-06-14 Honeywell International Inc. Laser sensor having a block ring activity
EP1437776B1 (en) * 2001-10-12 2011-09-21 Nichia Corporation Light emitting device and method for manufacture thereof
US6903446B2 (en) * 2001-10-23 2005-06-07 Cree, Inc. Pattern for improved visual inspection of semiconductor devices
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US7858403B2 (en) 2001-10-31 2010-12-28 Cree, Inc. Methods and systems for fabricating broad spectrum light emitting devices
US6841406B2 (en) * 2001-11-06 2005-01-11 Edward Brittain Stokes Methods and apparatus for a semiconductor device
US20030090103A1 (en) * 2001-11-09 2003-05-15 Thomas Becker Direct mailing device
JP2003174194A (ja) * 2001-12-07 2003-06-20 Sharp Corp 窒化物系半導体発光素子とその製造方法
US7138291B2 (en) * 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
US7196790B2 (en) * 2002-03-18 2007-03-27 Honeywell International Inc. Multiple wavelength spectrometer
US7470894B2 (en) * 2002-03-18 2008-12-30 Honeywell International Inc. Multi-substrate package assembly
JP3968566B2 (ja) * 2002-03-26 2007-08-29 日立電線株式会社 窒化物半導体結晶の製造方法及び窒化物半導体ウエハ並びに窒化物半導体デバイス
US8294172B2 (en) 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US7276798B2 (en) * 2002-05-23 2007-10-02 Honeywell International Inc. Integral topside vacuum package
US6972516B2 (en) * 2002-06-14 2005-12-06 University Of Cincinnati Photopump-enhanced electroluminescent devices
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
US6875995B2 (en) * 2002-08-16 2005-04-05 Cree, Inc. Heterogeneous bandgap structures for semiconductor devices and manufacturing methods therefor
US7800121B2 (en) 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US10340424B2 (en) * 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
KR100622209B1 (ko) 2002-08-30 2006-09-19 젤코어 엘엘씨 개선된 효율을 갖는 코팅된 발광다이오드
KR100499129B1 (ko) * 2002-09-02 2005-07-04 삼성전기주식회사 발광 다이오드 및 그 제조방법
CA2495149A1 (en) * 2002-09-19 2004-04-01 Cree, Inc. Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
US6815241B2 (en) * 2002-09-25 2004-11-09 Cao Group, Inc. GaN structures having low dislocation density and methods of manufacture
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
KR101045160B1 (ko) * 2002-12-20 2011-06-30 크리 인코포레이티드 자기정렬 반도체 메사와 콘택층을 구비한 반도체 소자형성방법 및 그에 관련된 소자
US6917057B2 (en) * 2002-12-31 2005-07-12 Gelcore Llc Layered phosphor coatings for LED devices
TWI230978B (en) * 2003-01-17 2005-04-11 Sanken Electric Co Ltd Semiconductor device and the manufacturing method thereof
KR100504180B1 (ko) * 2003-01-29 2005-07-28 엘지전자 주식회사 질화물 화합물 반도체의 결정성장 방법
US7042020B2 (en) * 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US7898047B2 (en) * 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US6885033B2 (en) * 2003-03-10 2005-04-26 Cree, Inc. Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
US7714345B2 (en) * 2003-04-30 2010-05-11 Cree, Inc. Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same
US7087936B2 (en) * 2003-04-30 2006-08-08 Cree, Inc. Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
US7531380B2 (en) * 2003-04-30 2009-05-12 Cree, Inc. Methods of forming light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof
US6841806B1 (en) * 2003-06-24 2005-01-11 The University Of Connecticut Heterojunction thyristor-based amplifier
WO2005060007A1 (en) * 2003-08-05 2005-06-30 Nitronex Corporation Gallium nitride material transistors and methods associated with the same
US20050104072A1 (en) 2003-08-14 2005-05-19 Slater David B.Jr. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
US6995403B2 (en) * 2003-09-03 2006-02-07 United Epitaxy Company, Ltd. Light emitting device
EP1665358B1 (en) * 2003-09-09 2020-07-01 The Regents of The University of California Fabrication of single or multiple gate field plates
US7183587B2 (en) * 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7029935B2 (en) * 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
EP1690301B1 (en) * 2003-11-12 2012-08-15 Cree, Inc. Methods of processing semiconductor wafer backsides having light emitting diodes (leds) thereon
JP4525894B2 (ja) * 2003-11-21 2010-08-18 サンケン電気株式会社 半導体素子形成用板状基体及びこの製造方法及びこれを使用した半導体素子
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
US20050145851A1 (en) * 2003-12-17 2005-07-07 Nitronex Corporation Gallium nitride material structures including isolation regions and methods
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US7531363B2 (en) * 2003-12-30 2009-05-12 Honeywell International Inc. Particle detection using fluorescence
US7615689B2 (en) * 2004-02-12 2009-11-10 Seminis Vegatable Seeds, Inc. Methods for coupling resistance alleles in tomato
US7202181B2 (en) * 2004-03-26 2007-04-10 Cres, Inc. Etching of substrates of light emitting devices
US7355284B2 (en) * 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
US7439609B2 (en) * 2004-03-29 2008-10-21 Cree, Inc. Doping of gallium nitride by solid source diffusion and resulting gallium nitride structures
US7326583B2 (en) 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
US7419912B2 (en) * 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
US7550783B2 (en) 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US7361946B2 (en) * 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
WO2006005062A2 (en) * 2004-06-30 2006-01-12 Cree, Inc. Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
US7118262B2 (en) * 2004-07-23 2006-10-10 Cree, Inc. Reflective optical elements for semiconductor light emitting devices
US20060017060A1 (en) * 2004-07-26 2006-01-26 Nai-Chuan Chen Vertical conducting nitride diode using an electrically conductive substrate with a metal connection
US7557380B2 (en) * 2004-07-27 2009-07-07 Cree, Inc. Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
TWI374552B (en) * 2004-07-27 2012-10-11 Cree Inc Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming
US7217583B2 (en) * 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US7737459B2 (en) * 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US7372198B2 (en) * 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
US7902534B2 (en) * 2004-09-28 2011-03-08 Honeywell International Inc. Cavity ring down system having a common input/output port
US7586114B2 (en) * 2004-09-28 2009-09-08 Honeywell International Inc. Optical cavity system having an orthogonal input
EP2426743B1 (en) * 2004-10-22 2019-02-20 Seoul Viosys Co., Ltd GaN compound semiconductor light emitting element and method of manufacturing the same
US20060097385A1 (en) 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
US20060214289A1 (en) * 2004-10-28 2006-09-28 Nitronex Corporation Gallium nitride material-based monolithic microwave integrated circuits
WO2006050372A2 (en) * 2004-11-01 2006-05-11 The Regents Of The University Of California Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking
JP4514584B2 (ja) * 2004-11-16 2010-07-28 富士通株式会社 化合物半導体装置及びその製造方法
US7247889B2 (en) 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates
US7322732B2 (en) * 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
US8288942B2 (en) 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
US8125137B2 (en) 2005-01-10 2012-02-28 Cree, Inc. Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same
US7304694B2 (en) * 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7939842B2 (en) * 2005-01-27 2011-05-10 Cree, Inc. Light emitting device packages, light emitting diode (LED) packages and related methods
US7365374B2 (en) 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
KR20080027355A (ko) * 2005-06-30 2008-03-26 마츠시다 덴코 가부시키가이샤 발광 장치
TWI422044B (zh) * 2005-06-30 2014-01-01 Cree Inc 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
KR100667506B1 (ko) * 2005-08-02 2007-01-10 엘지전자 주식회사 금속 질화막을 갖는 발광 다이오드 및 그 제조방법
US8835952B2 (en) 2005-08-04 2014-09-16 Cree, Inc. Submounts for semiconductor light emitting devices and methods of forming packaged light emitting devices including dispensed encapsulants
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
EP1938385B1 (en) 2005-09-07 2014-12-03 Cree, Inc. Transistors with fluorine treatment
JP2007095858A (ja) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス
KR20080072833A (ko) * 2005-10-04 2008-08-07 니트로넥스 코오포레이션 광대역 애플리케이션을 위한 갈륨 나이트라이드 물질트랜지스터 및 방법
US9608102B2 (en) * 2005-12-02 2017-03-28 Infineon Technologies Americas Corp. Gallium nitride material devices and associated methods
US7566913B2 (en) 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
EP1963743B1 (en) * 2005-12-21 2016-09-07 Cree, Inc. Lighting device
EP1969633B1 (en) 2005-12-22 2018-08-29 Cree, Inc. Lighting device
US7772604B2 (en) 2006-01-05 2010-08-10 Illumitex Separate optical device for directing light from an LED
US7442564B2 (en) * 2006-01-19 2008-10-28 Cree, Inc. Dispensed electrical interconnections
KR101408622B1 (ko) * 2006-01-20 2014-06-17 크리, 인코포레이티드 루미포르 필름의 공간적 분리에 의한 고체 상태 발광기의 스펙트럼 컨텐츠 시프팅
US7521728B2 (en) * 2006-01-20 2009-04-21 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
KR101210090B1 (ko) * 2006-03-03 2012-12-07 엘지이노텍 주식회사 금속 코어 인쇄회로기판 및 이를 이용한 발광 다이오드패키징 방법
US8969908B2 (en) * 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
JP5560519B2 (ja) * 2006-04-11 2014-07-30 日産自動車株式会社 半導体装置及びその製造方法
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
US7656532B2 (en) * 2006-04-18 2010-02-02 Honeywell International Inc. Cavity ring-down spectrometer having mirror isolation
JP2009538531A (ja) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド 照明装置、および、製造方法
KR20090031370A (ko) 2006-05-23 2009-03-25 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치
US8008676B2 (en) 2006-05-26 2011-08-30 Cree, Inc. Solid state light emitting device and method of making same
KR20140116536A (ko) * 2006-05-31 2014-10-02 크리, 인코포레이티드 조명 장치 및 조명 방법
US8698184B2 (en) 2011-01-21 2014-04-15 Cree, Inc. Light emitting diodes with low junction temperature and solid state backlight components including light emitting diodes with low junction temperature
US7943952B2 (en) * 2006-07-31 2011-05-17 Cree, Inc. Method of uniform phosphor chip coating and LED package fabricated using method
WO2008021451A2 (en) * 2006-08-14 2008-02-21 Aktiv-Dry Llc Human-powered dry powder inhaler and dry powder inhaler compositions
US7646024B2 (en) * 2006-08-18 2010-01-12 Cree, Inc. Structure and method for reducing forward voltage across a silicon carbide-group III nitride interface
US7763478B2 (en) 2006-08-21 2010-07-27 Cree, Inc. Methods of forming semiconductor light emitting device packages by liquid injection molding
CN101554089A (zh) 2006-08-23 2009-10-07 科锐Led照明科技公司 照明装置和照明方法
US7842960B2 (en) 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
US8087960B2 (en) 2006-10-02 2012-01-03 Illumitex, Inc. LED system and method
US7808013B2 (en) * 2006-10-31 2010-10-05 Cree, Inc. Integrated heat spreaders for light emitting devices (LEDs) and related assemblies
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US10295147B2 (en) * 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
JP5105160B2 (ja) 2006-11-13 2012-12-19 クリー インコーポレイテッド トランジスタ
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US9318327B2 (en) 2006-11-28 2016-04-19 Cree, Inc. Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
US7649189B2 (en) * 2006-12-04 2010-01-19 Honeywell International Inc. CRDS mirror for normal incidence fiber optic coupling
US8232564B2 (en) * 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US7709853B2 (en) * 2007-02-12 2010-05-04 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements
US9061450B2 (en) * 2007-02-12 2015-06-23 Cree, Inc. Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding
US20080198572A1 (en) * 2007-02-21 2008-08-21 Medendorp Nicholas W LED lighting systems including luminescent layers on remote reflectors
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
US7910944B2 (en) 2007-05-04 2011-03-22 Cree, Inc. Side mountable semiconductor light emitting device packages and panels
US20090002979A1 (en) * 2007-06-27 2009-01-01 Cree, Inc. Light emitting device (led) lighting systems for emitting light in multiple directions and related methods
US8042971B2 (en) * 2007-06-27 2011-10-25 Cree, Inc. Light emitting device (LED) lighting systems for emitting light in multiple directions and related methods
US10505083B2 (en) * 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
WO2009012287A1 (en) * 2007-07-17 2009-01-22 Cree Led Lighting Solutions, Inc. Optical elements with internal optical features and methods of fabricating same
US7863635B2 (en) * 2007-08-07 2011-01-04 Cree, Inc. Semiconductor light emitting devices with applied wavelength conversion materials
US20090039375A1 (en) * 2007-08-07 2009-02-12 Cree, Inc. Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the same
US7745848B1 (en) 2007-08-15 2010-06-29 Nitronex Corporation Gallium nitride material devices and thermal designs thereof
TWI396298B (zh) * 2007-08-29 2013-05-11 Everlight Electronics Co Ltd 發光半導體元件塗佈螢光粉的方法及其應用
KR101525274B1 (ko) * 2007-10-26 2015-06-02 크리, 인코포레이티드 하나 이상의 루미퍼를 갖는 조명 장치, 및 이의 제조 방법
US9660153B2 (en) 2007-11-14 2017-05-23 Cree, Inc. Gap engineering for flip-chip mounted horizontal LEDs
US8119028B2 (en) 2007-11-14 2012-02-21 Cree, Inc. Cerium and europium doped single crystal phosphors
US9754926B2 (en) 2011-01-31 2017-09-05 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8167674B2 (en) * 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8058088B2 (en) 2008-01-15 2011-11-15 Cree, Inc. Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
US8940561B2 (en) * 2008-01-15 2015-01-27 Cree, Inc. Systems and methods for application of optical materials to optical elements
US10008637B2 (en) 2011-12-06 2018-06-26 Cree, Inc. Light emitter devices and methods with reduced dimensions and improved light output
US8178888B2 (en) * 2008-02-01 2012-05-15 Cree, Inc. Semiconductor light emitting devices with high color rendering
US8026581B2 (en) * 2008-02-05 2011-09-27 International Rectifier Corporation Gallium nitride material devices including diamond regions and methods associated with the same
JP2011512037A (ja) 2008-02-08 2011-04-14 イルミテックス， インコーポレイテッド エミッタ層成形のためのシステムおよび方法
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
US8343824B2 (en) * 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
TWI362769B (en) * 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US9147812B2 (en) * 2008-06-24 2015-09-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package
US8240875B2 (en) * 2008-06-25 2012-08-14 Cree, Inc. Solid state linear array modules for general illumination
US7663756B2 (en) * 2008-07-21 2010-02-16 Honeywell International Inc Cavity enhanced photo acoustic gas sensor
US8148732B2 (en) * 2008-08-29 2012-04-03 Taiwan Semiconductor Manufacturing, Co., Ltd. Carbon-containing semiconductor substrate
US7955875B2 (en) * 2008-09-26 2011-06-07 Cree, Inc. Forming light emitting devices including custom wavelength conversion structures
US8198590B2 (en) * 2008-10-30 2012-06-12 Honeywell International Inc. High reflectance terahertz mirror and related method
US7864326B2 (en) 2008-10-30 2011-01-04 Honeywell International Inc. Compact gas sensor using high reflectance terahertz mirror and related system and method
CN101752477A (zh) * 2008-11-28 2010-06-23 清华大学 发光二极管
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
TWI407596B (zh) * 2009-03-06 2013-09-01 Advanced Optoelectronic Tech 側邊散熱型發光二極體及其製程
JP5330880B2 (ja) * 2009-03-27 2013-10-30 学校法人 名城大学 発光ダイオード素子及びその製造方法
WO2010111854A1 (zh) * 2009-03-31 2010-10-07 西安电子科技大学 紫外发光二极管器件及其制造方法
US8921876B2 (en) * 2009-06-02 2014-12-30 Cree, Inc. Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements
US20110012141A1 (en) 2009-07-15 2011-01-20 Le Toquin Ronan P Single-color wavelength-converted light emitting devices
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
RU2452061C2 (ru) * 2009-10-16 2012-05-27 Общество с ограниченной ответственностью "Нитридные кристаллы" Полупроводниковый элемент, излучающий свет в ультрафиолетовом диапазоне
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
KR100999800B1 (ko) * 2010-02-04 2010-12-08 엘지이노텍 주식회사 발광 소자 패키지 및 그 제조방법
JP5678629B2 (ja) * 2010-02-09 2015-03-04 ソニー株式会社 発光装置の製造方法
US9275979B2 (en) 2010-03-03 2016-03-01 Cree, Inc. Enhanced color rendering index emitter through phosphor separation
US8829999B2 (en) 2010-05-20 2014-09-09 Cree, Inc. Low noise amplifiers including group III nitride based high electron mobility transistors
US8437000B2 (en) 2010-06-29 2013-05-07 Honeywell International Inc. Multiple wavelength cavity ring down gas sensor
US8269972B2 (en) 2010-06-29 2012-09-18 Honeywell International Inc. Beam intensity detection in a cavity ring down sensor
US8322191B2 (en) 2010-06-30 2012-12-04 Honeywell International Inc. Enhanced cavity for a photoacoustic gas sensor
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US9515229B2 (en) 2010-09-21 2016-12-06 Cree, Inc. Semiconductor light emitting devices with optical coatings and methods of making same
US8410679B2 (en) 2010-09-21 2013-04-02 Cree, Inc. Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface
RU2456711C1 (ru) * 2010-11-11 2012-07-20 Общество с ограниченной ответственностью "Галлий-Н" Полупроводниковый светоизлучающий элемент
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
US8589120B2 (en) 2011-01-28 2013-11-19 Cree, Inc. Methods, systems, and apparatus for determining optical properties of elements of lighting components having similar color points
US9673363B2 (en) 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
US9508904B2 (en) 2011-01-31 2016-11-29 Cree, Inc. Structures and substrates for mounting optical elements and methods and devices for providing the same background
US9831220B2 (en) 2011-01-31 2017-11-28 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US9053958B2 (en) 2011-01-31 2015-06-09 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9401103B2 (en) 2011-02-04 2016-07-26 Cree, Inc. LED-array light source with aspect ratio greater than 1
US10098197B2 (en) 2011-06-03 2018-10-09 Cree, Inc. Lighting devices with individually compensating multi-color clusters
US11251164B2 (en) 2011-02-16 2022-02-15 Creeled, Inc. Multi-layer conversion material for down conversion in solid state lighting
US8921875B2 (en) 2011-05-10 2014-12-30 Cree, Inc. Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods
US8814621B2 (en) 2011-06-03 2014-08-26 Cree, Inc. Methods of determining and making red nitride compositions
US8729790B2 (en) 2011-06-03 2014-05-20 Cree, Inc. Coated phosphors and light emitting devices including the same
US8906263B2 (en) 2011-06-03 2014-12-09 Cree, Inc. Red nitride phosphors
US8747697B2 (en) 2011-06-07 2014-06-10 Cree, Inc. Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same
US8684569B2 (en) 2011-07-06 2014-04-01 Cree, Inc. Lens and trim attachment structure for solid state downlights
US10686107B2 (en) 2011-07-21 2020-06-16 Cree, Inc. Light emitter devices and components with improved chemical resistance and related methods
US10211380B2 (en) 2011-07-21 2019-02-19 Cree, Inc. Light emitting devices and components having improved chemical resistance and related methods
TW201312807A (zh) 2011-07-21 2013-03-16 Cree Inc 光發射器元件封裝與部件及改良化學抵抗性的方法與相關方法
TW201314924A (zh) * 2011-09-22 2013-04-01 Pinecone En Inc 太陽能電池的製造方法及結構
US9496466B2 (en) 2011-12-06 2016-11-15 Cree, Inc. Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction
US9318669B2 (en) 2012-01-30 2016-04-19 Cree, Inc. Methods of determining and making red nitride compositions
US9343441B2 (en) 2012-02-13 2016-05-17 Cree, Inc. Light emitter devices having improved light output and related methods
US9240530B2 (en) 2012-02-13 2016-01-19 Cree, Inc. Light emitter devices having improved chemical and physical resistance and related methods
US9735198B2 (en) 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
TWI482276B (zh) * 2012-10-12 2015-04-21 Ind Tech Res Inst 氮化物半導體結構
US9316382B2 (en) 2013-01-31 2016-04-19 Cree, Inc. Connector devices, systems, and related methods for connecting light emitting diode (LED) modules
US9030103B2 (en) 2013-02-08 2015-05-12 Cree, Inc. Solid state light emitting devices including adjustable scotopic / photopic ratio
US9039746B2 (en) 2013-02-08 2015-05-26 Cree, Inc. Solid state light emitting devices including adjustable melatonin suppression effects
US9565782B2 (en) 2013-02-15 2017-02-07 Ecosense Lighting Inc. Field replaceable power supply cartridge
US9055643B2 (en) 2013-03-13 2015-06-09 Cree, Inc. Solid state lighting apparatus and methods of forming
CN104134729B (zh) * 2013-05-03 2017-04-26 展晶科技(深圳)有限公司 发光芯片及其制造方法
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9240528B2 (en) 2013-10-03 2016-01-19 Cree, Inc. Solid state lighting apparatus with high scotopic/photopic (S/P) ratio
US10477636B1 (en) 2014-10-28 2019-11-12 Ecosense Lighting Inc. Lighting systems having multiple light sources
CN107210337B (zh) 2014-11-06 2021-06-29 亮锐控股有限公司 具有顶部接触件下方的沟槽的发光器件
US10431568B2 (en) 2014-12-18 2019-10-01 Cree, Inc. Light emitting diodes, components and related methods
US11306897B2 (en) 2015-02-09 2022-04-19 Ecosense Lighting Inc. Lighting systems generating partially-collimated light emissions
US9869450B2 (en) 2015-02-09 2018-01-16 Ecosense Lighting Inc. Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector
US9746159B1 (en) 2015-03-03 2017-08-29 Ecosense Lighting Inc. Lighting system having a sealing system
US9651227B2 (en) 2015-03-03 2017-05-16 Ecosense Lighting Inc. Low-profile lighting system having pivotable lighting enclosure
US9568665B2 (en) 2015-03-03 2017-02-14 Ecosense Lighting Inc. Lighting systems including lens modules for selectable light distribution
US9651216B2 (en) 2015-03-03 2017-05-16 Ecosense Lighting Inc. Lighting systems including asymmetric lens modules for selectable light distribution
CN113130725A (zh) 2015-03-31 2021-07-16 科锐Led公司 具有包封的发光二极管和方法
WO2016176625A1 (en) 2015-04-30 2016-11-03 Cree, Inc. Solid state lighting components
USD785218S1 (en) 2015-07-06 2017-04-25 Ecosense Lighting Inc. LED luminaire having a mounting system
US10074635B2 (en) 2015-07-17 2018-09-11 Cree, Inc. Solid state light emitter devices and methods
USD782094S1 (en) 2015-07-20 2017-03-21 Ecosense Lighting Inc. LED luminaire having a mounting system
USD782093S1 (en) 2015-07-20 2017-03-21 Ecosense Lighting Inc. LED luminaire having a mounting system
US9651232B1 (en) 2015-08-03 2017-05-16 Ecosense Lighting Inc. Lighting system having a mounting device
US9806182B2 (en) 2015-09-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using elemental diboride diffusion barrier regions
US9773898B2 (en) 2015-09-08 2017-09-26 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising spatially patterned implanted species
US9704705B2 (en) 2015-09-08 2017-07-11 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via reaction with active species
US9673281B2 (en) 2015-09-08 2017-06-06 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions
US9627473B2 (en) 2015-09-08 2017-04-18 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation in III-nitride material semiconductor structures
US10211294B2 (en) 2015-09-08 2019-02-19 Macom Technology Solutions Holdings, Inc. III-nitride semiconductor structures comprising low atomic mass species
US9799520B2 (en) 2015-09-08 2017-10-24 Macom Technology Solutions Holdings, Inc. Parasitic channel mitigation via back side implantation
US20170069721A1 (en) 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Parasitic channel mitigation using silicon carbide diffusion barrier regions
CN113345988A (zh) 2015-10-01 2021-09-03 克利公司 包括倒装芯片发光二极管的发光设备
US9960127B2 (en) 2016-05-18 2018-05-01 Macom Technology Solutions Holdings, Inc. High-power amplifier package
WO2018022456A1 (en) 2016-07-26 2018-02-01 Cree, Inc. Light emitting diodes, components and related methods
US10134658B2 (en) 2016-08-10 2018-11-20 Macom Technology Solutions Holdings, Inc. High power transistors
WO2018052902A1 (en) 2016-09-13 2018-03-22 Cree, Inc. Light emitting diodes, components and related methods
US10804251B2 (en) 2016-11-22 2020-10-13 Cree, Inc. Light emitting diode (LED) devices, components and methods
US10439114B2 (en) 2017-03-08 2019-10-08 Cree, Inc. Substrates for light emitting diodes and related methods
US10410997B2 (en) 2017-05-11 2019-09-10 Cree, Inc. Tunable integrated optics LED components and methods
EP3428975A1 (en) 2017-07-14 2019-01-16 AGC Glass Europe Light-emitting devices having an antireflective silicon carbide or sapphire substrate and methods of forming the same
US10672957B2 (en) 2017-07-19 2020-06-02 Cree, Inc. LED apparatuses and methods for high lumen output density
US11107857B2 (en) 2017-08-18 2021-08-31 Creeled, Inc. Light emitting diodes, components and related methods
US11101248B2 (en) 2017-08-18 2021-08-24 Creeled, Inc. Light emitting diodes, components and related methods
US10361349B2 (en) 2017-09-01 2019-07-23 Cree, Inc. Light emitting diodes, components and related methods
US10541353B2 (en) 2017-11-10 2020-01-21 Cree, Inc. Light emitting devices including narrowband converters for outdoor lighting applications
US10734560B2 (en) 2017-11-29 2020-08-04 Cree, Inc. Configurable circuit layout for LEDs
US11387389B2 (en) 2018-01-29 2022-07-12 Creeled, Inc. Reflective layers for light-emitting diodes
US11031527B2 (en) 2018-01-29 2021-06-08 Creeled, Inc. Reflective layers for light-emitting diodes
US11923481B2 (en) 2018-01-29 2024-03-05 Creeled, Inc. Reflective layers for light-emitting diodes
US10573543B2 (en) 2018-04-30 2020-02-25 Cree, Inc. Apparatus and methods for mass transfer of electronic die
US11121298B2 (en) 2018-05-25 2021-09-14 Creeled, Inc. Light-emitting diode packages with individually controllable light-emitting diode chips
US11101410B2 (en) 2018-05-30 2021-08-24 Creeled, Inc. LED systems, apparatuses, and methods
US10453827B1 (en) 2018-05-30 2019-10-22 Cree, Inc. LED apparatuses and methods
CN112236875A (zh) 2018-06-04 2021-01-15 科锐公司 Led设备以及方法
US11038023B2 (en) 2018-07-19 2021-06-15 Macom Technology Solutions Holdings, Inc. III-nitride material semiconductor structures on conductive silicon substrates
US10964866B2 (en) 2018-08-21 2021-03-30 Cree, Inc. LED device, system, and method with adaptive patterns
US11233183B2 (en) 2018-08-31 2022-01-25 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US11335833B2 (en) 2018-08-31 2022-05-17 Creeled, Inc. Light-emitting diodes, light-emitting diode arrays and related devices
US10879441B2 (en) 2018-12-17 2020-12-29 Cree, Inc. Interconnects for light emitting diode chips
US10985294B2 (en) 2019-03-19 2021-04-20 Creeled, Inc. Contact structures for light emitting diode chips
US11101411B2 (en) 2019-06-26 2021-08-24 Creeled, Inc. Solid-state light emitting devices including light emitting diodes in package structures
US11094848B2 (en) 2019-08-16 2021-08-17 Creeled, Inc. Light-emitting diode chip structures
US11075271B2 (en) 2019-10-14 2021-07-27 Cree, Inc. Stepped field plates with proximity to conduction channel and related fabrication methods
US11257940B2 (en) 2020-01-14 2022-02-22 Cree, Inc. Group III HEMT and capacitor that share structural features
US20230078017A1 (en) * 2021-09-16 2023-03-16 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740622A (en) * 1972-07-10 1973-06-19 Rca Corp Electroluminescent semiconductor device for generating ultra violet radiation
US3849707A (en) * 1973-03-07 1974-11-19 Ibm PLANAR GaN ELECTROLUMINESCENT DEVICE
US3819974A (en) * 1973-03-12 1974-06-25 D Stevenson Gallium nitride metal-semiconductor junction light emitting diode
US3864592A (en) * 1973-03-22 1975-02-04 Rca Corp Electroluminescent semiconductor display
JPS5137915B2 (zh) * 1973-10-19 1976-10-19
SU773795A1 (ru) * 1977-04-01 1980-10-23 Предприятие П/Я А-1172 Светоизлучающий прибор
US4476620A (en) * 1979-10-19 1984-10-16 Matsushita Electric Industrial Co., Ltd. Method of making a gallium nitride light-emitting diode
US4396929A (en) * 1979-10-19 1983-08-02 Matsushita Electric Industrial Company, Ltd. Gallium nitride light-emitting element and method of manufacturing the same
JPS6055996B2 (ja) * 1979-12-05 1985-12-07 松下電器産業株式会社 電場発光半導体装置
JPS62119196A (ja) * 1985-11-18 1987-05-30 Univ Nagoya 化合物半導体の成長方法
US5218216A (en) * 1987-01-31 1993-06-08 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
EP0277597B1 (en) * 1987-01-31 1994-07-13 Toyoda Gosei Co., Ltd. Gallium nitride group semiconductor light emitting diode and the process of producing the same
US4911102A (en) * 1987-01-31 1990-03-27 Toyoda Gosei Co., Ltd. Process of vapor growth of gallium nitride and its apparatus
NL8701497A (nl) * 1987-06-26 1989-01-16 Philips Nv Halfgeleiderinrichting voor het opwekken van electromagnetische straling.
US4862471A (en) * 1988-04-22 1989-08-29 University Of Colorado Foundation, Inc. Semiconductor light emitting device
JP2650744B2 (ja) * 1988-12-28 1997-09-03 シャープ株式会社 発光ダイオード
JP3026087B2 (ja) * 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
US4985742A (en) * 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
JP2730245B2 (ja) * 1990-01-29 1998-03-25 日産自動車株式会社 炭化珪素・窒化珪素質複合焼結体の製造方法
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US5281830A (en) * 1990-10-27 1994-01-25 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
JP3160914B2 (ja) * 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
US5290393A (en) * 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
JP2786952B2 (ja) * 1991-02-27 1998-08-13 株式会社豊田中央研究所 窒化ガリウム系化合物半導体発光素子およびその製造方法
US5273933A (en) * 1991-07-23 1993-12-28 Kabushiki Kaisha Toshiba Vapor phase growth method of forming film in process of manufacturing semiconductor device
JP2666228B2 (ja) * 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
JP3352712B2 (ja) * 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
EP1313153A3 (en) * 1992-07-23 2005-05-04 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
KR100286699B1 (ko) * 1993-01-28 2001-04-16 오가와 에이지 질화갈륨계 3-5족 화합물 반도체 발광디바이스 및 그 제조방법
JP2918139B2 (ja) * 1993-06-17 1999-07-12 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
US5393993A (en) * 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
DE69534387T2 (de) * 1994-03-22 2006-06-14 Toyoda Gosei Kk Lichtemittierende Halbleitervorrichtung, die eine Stickstoff enthaltende Verbindung der Gruppe III verwendet
EP1473781A3 (en) * 1994-07-21 2007-02-21 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
JP2743901B2 (ja) * 1996-01-12 1998-04-28 日本電気株式会社 窒化ガリウムの結晶成長方法
JP3090057B2 (ja) * 1996-08-07 2000-09-18 昭和電工株式会社 短波長発光素子
US5838707A (en) * 1996-12-27 1998-11-17 Motorola, Inc. Ultraviolet/visible light emitting vertical cavity surface emitting laser and method of fabrication

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7105370B2 (en) 2000-08-31 2006-09-12 Osram Gmbh Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor
CN1471735B (zh) * 2000-08-31 2010-05-26 奥斯兰姆奥普托半导体有限责任公司 一种led芯片及其制造方法
CN1305108C (zh) * 2001-07-23 2007-03-14 克里公司 具有成形衬底的发光二极管的结合以及用于结合具有成形衬底的发光二极管的夹头
CN101425556B (zh) * 2004-08-26 2011-12-14 Lg伊诺特有限公司 氮化物半导体发光器件及其制造方法
CN101027784B (zh) * 2004-09-22 2013-08-07 克里公司 高输出第ⅲ族氮化物发光二极管
CN101330123B (zh) * 2007-06-21 2010-06-09 住友电气工业株式会社 Ⅲ族氮化物系半导体发光元件
CN109786484A (zh) * 2018-12-19 2019-05-21 西安电子科技大学 一种双异质结和复合钝化层的impatt二极管及其制作方法

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CN1156028C (zh) 2004-06-30
CA2220031A1 (en) 1996-11-14
HK1015549A1 (en) 1999-10-15
WO1996036080A1 (en) 1996-11-14
CA2220031C (en) 2004-01-06
EP0826246A1 (en) 1998-03-04
US5739554A (en) 1998-04-14
KR19990008420A (ko) 1999-01-25
JPH11504764A (ja) 1999-04-27
TW362291B (en) 1999-06-21
AU5545296A (en) 1996-11-29

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