CN1162901C - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN1162901C
CN1162901C CNB011329009A CN01132900A CN1162901C CN 1162901 C CN1162901 C CN 1162901C CN B011329009 A CNB011329009 A CN B011329009A CN 01132900 A CN01132900 A CN 01132900A CN 1162901 C CN1162901 C CN 1162901C
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China
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mentioned
hole
semiconductor device
manufacture method
electrode
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CN1338775A (zh
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仓岛羊平
成
梅津一成
树
伊东春树
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Samsung Electronics Co Ltd
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Seiko Epson Corp
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Abstract

本发明的课题是，提供能够容易地以高可靠性实现电连接的半导体装置及其制造方法、电路基板以及电子装置。半导体装置的制造方法包括：在具有电极14的半导体元件10上，在上述电极14的位置形成贯通的第1通孔18的第1工序；在包含上述第1通孔18内侧的区域，敷设绝缘材料22，使得备有贯通上述绝缘材料22的第2通孔24的第2工序；以及在上述第1通孔18内侧，设置导电构件28，使之通过贯通上述绝缘材料22的第2通孔24的第3工序。

Description

半导体装置的制造方法
技术领域
本发明涉及半导体装置的制造方法。
背景技术
近年来，正在开发具有将多片半导体芯片重叠起来的层叠结构的半导体装置。其中的多数将连线或引线键合到半导体芯片的电极以求得电连接，但为了设置连线等，要做到小型化是有限度的。
发明内容
本发明就是为解决这一问题而提出来的，其目的在于提供能够容易以高可靠性实现电连接的半导体装置的制造方法。
根据本发明，提供了一种半导体装置的制造方法，包括：在具有电极的半导体元件上，在上述电极的位置形成贯通的第1通孔的第1工序；在包含上述第1通孔内侧的区域，敷设绝缘材料，使得备有贯通上述绝缘材料的第2通孔的第2工序；以及在上述第1通孔内侧，至少贯通上述绝缘材料的第2通孔内设置导电构件的第3工序；将制造的多个半导体装置层叠起来、经上述导电构件将上下的上述半导体元件电连接的工序；其中，在上述第2工序中，敷设上述绝缘材料，使之覆盖住与上述半导体元件的上述电极形成面相背的面，并敷设上述绝缘材料，以之填埋上述第1通孔，在上述第1通孔的内侧，形成上述第2通孔，使得它以小于上述第1通孔的孔径贯通上述绝缘材料；上述绝缘材料由树脂构成，采用上述树脂作为粘结剂使多个上述半导体元件贴合在一起，将上述树脂加热，通过使上述树脂完成固化收缩，将上述导电构件与上述电极进行电连接。
在所述的半导体装置的制造方法，在使多个上述半导体元件贴合以前将上述树脂加热，使其粘结力显现出来。
其中在上述第2工序中涂布敷设上述树脂。
其中，上述导电构件是导电膏，在上述第3工序中，使上述导电膏充填到上述第2通孔内。
其中，形成上述第2通孔，使其附有越接近上述半导体元件的上述电极就变得越小的圆锥面。
其中，形成上述第2通孔，使其附有越远离上述半导体元件的上述电极就变得越小的圆锥面。
其中，上述第1通孔或上述第2通孔中至少某一方用激光光束形成。可以使上述激光光束照射与上述半导体元件的上述电极形成面相背的面。
本发明还提供了一种半导体装置的制造方法，其特征在于，包括：在具有电极的第1和第2半导体元件上，在上述电极的位置形成贯通的第1通孔的第1工序；在包含上述第1通孔内侧的区域，敷设绝缘材料，使得备有贯通上述绝缘材料的第2通孔的第2工序；以及将导电构件设置在上述第1半导体元件的上述电极上并与之电连接，将上述导电构件嵌入上述第2半导体元件的上述第2通孔内，同时将上述第1和第2半导体元件层叠起来的第3工序；在上述第2工序中，敷设上述绝缘材料，以之填埋上述第1通孔，在上述第1通孔的内侧，形成上述第2通孔，使得它以小于上述第1通孔的孔径贯通上述绝缘材料。
其中，在上述第2工序中，敷设上述绝缘材料，使之覆盖住与上述半导体元件的上述电极形成面相背的面。
上述绝缘材料由树脂构成，采用上述树脂作为粘结剂使多个上述半导体元件贴合在一起，将上述树脂加热，通过使上述树脂完成固化收缩，将上述导电构件与上述电极进行电连接。
其中，在使多个上述半导体元件贴合以前将上述树脂加热，使其粘结力显现出来。
其中，在上述第2工序中涂布敷设上述树脂。
其中，上述导电构件是导电膏，在上述第3工序中，使上述导电膏充填到上述第2通孔内。
其中，上述导电构件是凸点，在上述第3工序中，将上述凸点的至少一部分嵌入上述第2半导体元件的上述第2通孔内。可以将上述凸点多个层叠起来。
其中，在上述第3工序以后使上述凸点熔融并使之充填到上述第2通孔内。
其中，形成上述第2通孔，使其附有越接近上述半导体元件的上述电极就变得越小的圆锥面。
其中，形成上述第2通孔，使其附有越远离上述半导体元件的上述电极就变得越小的圆锥面。
其中，上述第1通孔或上述第2通孔中至少某一方用激光光束形成。可以使上述激光光束照射与上述半导体元件的上述电极形成面相背的面。
按照本发明，由于导电构件设置在半导体元件的第2通孔内，可以期求半导体元件的一个面和另一个面实现电连接。由于导电构件设置在贯通绝缘材料的第2通孔内，可以很容易实现半导体元件与导电构件之间的绝缘。
按照本发明，借助于贯通半导体元件的导电构件，将多个半导体元件进行电连接。据此，可以用最小的体积很容易制造例如3叠以上的层叠结构的半导体装置。
按照本发明，可将多个半导体元件组装成叠层结构，同时可使各个半导体元件的两面实现电导通。因此，制造工序可期求得到简化。由于导电构件设置在贯通绝缘材料的第2通孔内，可以很容易实现半导体元件与导电构件之间的绝缘。
按照本发明，由于可敷设绝缘材料，使之覆盖住半导体元件的面，这样的敷设十分容易。另外，特别是半导体元件很薄时，在以后的工序中很容易对半导体元件进行处理。此外，譬如说因为使用了绝缘材料作为半导体元件的应力减缓层，可以提高制造过程中或成品的半导体装置的可靠性。
按照本发明，树脂不仅可作为粘结剂使用，还可利用树脂的固化收缩作用对上下的半导体元件进行电连接，从而可简化工序。
这样一来，通过形成绝缘材料，确实可使半导体元件与导电构件绝缘。即，可在不使半导体元件发生电短路的情况下，实现半导体元件两面之间的电连接。
按照本发明，由于敷设导电膏，使之充填第2通孔，故可在不降低半导体元件机械强度的情况下实现半导体元件两面之间的电连接。
按照本发明，由于第2通孔得到充填，可增高半导体元件的机械强度。
按照本发明，例如可很容易将固体的导电构件嵌入第2通孔内。
按照本发明，可期求防止在第2通孔内设置的导电构件松脱。
按照本发明，可以很容易在半导体元件内形成小孔。因此，即使半导体元件的电极外形很小，也能在电极位置处确实形成贯通半导体元件的通孔。
按照本发明，很难使因使用激光光束而生成的堆积物堆积在电极上。因此，可很容易形成通孔，形成可靠性高的半导体元件。
按照本发明，借助于设置在通孔内的导电构件，半导体元件的一个面与另一个面可实现电连接。在半导体元件内部，由于能实现两个面之间的导通，可提供小型的半导体装置。
按照本发明，不会使半导体元件的机械强度降低。
按照本发明，可期求防止设置在通孔内的导电构件松脱。
按照本发明，例如可减缓施加到半导体元件上的应力。因此，可提供可靠性高的半导体装置。
按照本发明，在层叠到另一半导体装置上时，很容易以突出的部分作为基准进行半导体装置的位置对准。
附图说明
图1A～1C是应用本发明的第1实施例的半导体装置的制造方法示意图。
图2A～2C是应用本发明的第1实施例的半导体装置的制造方法示意图。
图3是应用本发明的第1实施例的变例的半导体装置的制造方法的说明图。
图4A和4B是应用本发明的第2实施例的半导体装置的制造方法示意图。
图5是应用本发明的第2实施例的变例的半导体装置一部分的示意图。
图6A和6B是应用本发明的第3实施例的半导体装置的制造方法示意图。
图7是应用本发明的实施例的半导体装置的制造方法示意图。
图8是安装了应用本发明的实施例的半导体装置的电路基板示意图。
图9是具有应用本发明的实施例的半导体装置的电子装置示意图。
图10是具有应用本发明的实施例的半导体装置的电子装置示意图。
具体实施方式
以下，参照附图对本发明的合适实施例加以说明。然而，本发明并不限于以下的实施例。再有，以下实施例中所示的内容也能够在可能的限度内应用于另外的实施例。
(第1实施例)
图1A～2C是应用本发明的第1实施例的半导体装置的制造方法示意图。图1A是本实施例中使用的半导体芯片10(半导体元件)的示意图。在本实施例所示的例子中，使用将半导体晶片逐边切割为多个的半导体芯片10。半导体芯片10一般为长方体(包含立方体)，但对其形状没有限制，也可以是球形。
半导体芯片10是对原先的半导体芯片12(或半导体晶片)的厚度磨薄而成。详细而言，半导体芯片10是它的与集成电路的形成面(有源面)相背的面被研磨。只要使形成集成电路的部分保留下来，半导体芯片10的厚度可尽量减薄。其厚度虽不加限定，但以50μm左右为宜。使用薄的半导体芯片10后，可以制造小型并且高密度的半导体装置。
半导体芯片10的研磨，可以在将半导体晶片切成小片前进行，也可以在切成小片后进行。另外，在半导体晶片内，预先形成一道其深度大于半导体芯片10的厚度的深槽，通过对半导体晶片12进行研磨，可用分割法分割成多片薄的半导体芯片10。
半导体芯片10在形成集成电路一侧的面上有多个电极14。电极14一般是铝，但也可由铜等形成。电极14的大小随设计而异，但以形成例如边长约为100μm的方形为宜。电极14在半导体芯片10的端部或中央部形成。电极14可在半导体芯片10的两边或四边一并形成。
在半导体芯片10上，多形成钝化膜(图中未示出)，它避开电极14的中央部而覆盖住端部。钝化膜可用诸如SiO2、SiN或聚酰亚胺树脂之类形成。
在电极14上也可形成镀层16。形成镀层16的工序可在研磨半导体芯片12之前或之后。镀层16可用无电解镀形成。通过在电极14上形成镀层16，电极14的氧化膜可被除去。此外，在后面工序中形成的焊锡等可借助于镀层16而易于浸润。镀层16由电极14的材料决定。当电极14为铝时，例如，镀层16可由含镍和含金的材料形成。
本实施例的半导体装置的制造方法可使用上述的半导体芯片10进行以下的工序。或者，该制造方法还可包含上述工序中的某一工序。
如图1B所示，在上述半导体芯片10上形成第1通孔18。第1通孔18在各自的电极14的位置处贯通半导体芯片10。第1通孔例如可使用激光器(例如YAG激光器或受激准分子激光器)形成。如使用激光器，例如即便是电极14的一边约为100μm的方形，在电极14的内侧区域也很容易形成孔径比电极小的第1通孔18。再有，第1通孔18在平面上看，可以是圆形或方形中的某一种，也可以是其它形状。
激光光束可以只从半导体芯片10的一个面照射，或者也可以从两面(轮流或同时)照射。在前者的场合，激光光束可从与半导体芯片10的电极14形成面相背的面照射。果若如此，则使用激光光束所产生的堆积物很难堆积在电极14(镀层16)上。还有，预先形成覆盖电极14(镀层16)的保护膜(图中未示出)，可使使用激光光束所产生的堆积物堆积在其保护膜上。据此，如以后揭开电极14(镀层16)上的保护膜，则在电极14(镀层16)上就没有堆积多余物。保护膜也可以是抗蚀剂或油墨等。再有，当照射激光光束时，预先形成凹坑(图中未示出)，能以此作为标记照射激光光束。
在第1通孔18的内表面，可形成圆锥面。例如，可形成第1通孔18，使其附有越接近半导体芯片10的电极14就变得越小的圆锥面20。此时，第1通孔18的大孔径可以是半导体芯片10的厚度的2倍以内的大小。据此，当采用激光光束时，就很容易形成圆锥形的第1通孔18。例如，当半导体芯片10的厚度约为50μm时，可形成第1通孔18的大孔径为60～80μm左右，小孔径为30～40μm左右。通过作成这样的圆锥面20，在后面的工序中，也可在第2通孔24内作成同样的圆锥面26(参照图2A)。或者，第1通孔18也可形成对半导体芯片10的面垂直的内壁表面。
这些工序也可照此进行：在研磨时使用的切割带上贴附有多个半导体芯片10。据此，可将多个半导体芯片10并列的切割线作为基准，在正确的位置照射激光光束。
如图1C所示，在包括第1通孔18内侧的区域敷设绝缘材料22。如图所示，可敷设绝缘材料22以填埋第1通孔18。据此，半导体芯片10确实可使第1通孔18内绝缘。或者，绝缘材料22也可只在第1通孔18的内壁表面形成。再有，绝缘材料22可用树脂、氧化膜或氮化膜等形成。
如图所示，绝缘材料22可覆盖住与半导体芯片10的电极14形成面相背的面而敷设。在第1通孔的延长方向的全长上，还可敷设绝缘材料22。此时，在半导体芯片10上可以在整个面敷设绝缘材料。据此，由于绝缘材料可敷设在半导体芯片10的整个面上，所以很容易敷设在第1通孔18的内侧。还有，可使易产生细小裂痕的半导体芯片10防止裂痕的产生，在此后的工序中，可以很容易地处理半导体芯片10。此外，即使研磨时因发热使半导体芯片10膨胀而成为容易弯曲的状态，这种弯曲也会被绝缘材料22所吸收。即，施加于半导体芯片10上的应力可被绝缘材料减缓。
绝缘材料22可用涂布法敷设。此时，绝缘材料22也可以是树脂。例如可使用配置机涂布树脂。通过溶剂挥发使树脂干燥，可以很容易使树脂覆盖在半导体芯片10上。据此，因为涂布了树脂，半导体芯片10的处理变得很容易。在使用易产生细小裂痕的半导体芯片10时，涂布树脂后在不会弄裂半导体芯片10方面特别有效。
或者，绝缘材料22可使用丝网印刷或喷墨印刷方式敷设。特别是，如果采用喷墨印刷方式，则借助于应用在喷墨印刷方面已实用化的技术，即可进行高速并且不浪费油墨的经济式涂布。图中没有示出的喷墨头例如可以是在喷墨印刷方面已实用化的产品，可使用应用了压电元件的压电喷射型，或采用了电热转换体作为能量发生元件的气泡喷射型等，可任意设定喷射面积和喷射图形。
再有，绝缘材料22也可使用化学气相淀积(CVD)或以感光性树脂使用掩模形成，其形成方法不受限制。
如图2A所示，形成第2通孔24。在上述工序中，在将绝缘材料22填埋第1通孔18而敷设后，可形成第2通孔24。第2通孔24在第1通孔18的内侧，以其孔径比第1通孔18小而形成。第2通孔24贯通绝缘材料22。如图所示，在将绝缘材料22敷设达到半导体芯片10的面上时，第2通孔24还贯通在第1通孔18的延长线上所敷设的绝缘材料22的部分。
对第1通孔18的说明内容也能适用于第2通孔24的形成方法。即，第2通孔24可照射激光光束形成。据此，由于可形成细小的通孔，具有孔径比第1通孔18的孔径还小的第2通孔24就可很容易形成。
在第2通孔24的内表面可形成为圆锥形。例如，第2通孔24可形成为附有越接近半导体芯片10的电极14处就变得越小的圆锥面26。据此，在从与半导体芯片10的电极14形成面相背的一侧例如可很容易嵌入固体的导电构件。第2通孔24在其内侧用绝缘材料22覆盖住半导体芯片10，以贯通绝缘材料22为宜，在该范围内可决定孔径的大小。再有，对第2通孔24的平面形状不加限定。
或者，第2通孔24的内表面也可形成对半导体芯片10的面垂直的内壁表面。
如图2B所示，在第2通孔24的内侧设置导电构件28。导电构件28至少设置在第2通孔24内。导电构件28可设置成通过第2通孔24的中心轴。或者，如期求导电构件28经绝缘材料22与半导体芯片10绝缘，亦可偏离中心轴设置。如图所示，可使导电构件28充填到第2通孔24内。导电构件28可以是导电膏。作为导电膏，可使用导电树脂或焊锡等焊料。通过设置导电构件28以掩埋第2通孔24，不会使半导体芯片10的机械强度降低，同时可期求对半导体芯片10的两面进行电连接。
或者，在上述工序中，当绝缘材料22仅敷设在第1通孔18的内壁表面时，导电构件28可设置成通过在第1通孔18内侧用绝缘材料22围起来的孔(第2通孔)的中心轴。此时也可使导电膏充填到孔内。
采取以上工序后可得到图2B所示的半导体装置1。半导体装置1包括：有电极14并且在电极14的位置形成通孔(例如第2通孔24)的半导体芯片10，绝缘材料22以及导电构件28。
在图示的例子中，绝缘材料22被敷设在包含第2通孔24的内表面的区域内。换言之，第2通孔24用绝缘材料包围而成。另外，绝缘材料22可覆盖住与半导体芯片10的电极14形成面相背的面而敷设。据此，施加到半导体芯片10的应力得到减缓。
导电构件28被设置成通过第2通孔24的中心轴。导电构件28可掩埋第2通孔24而设置。据此，由于第2通孔24被掩埋，故不会降低半导体芯片10的机械强度。在与半导体芯片10的电极14形成面相背的一侧，导电构件28从绝缘材料22或半导体芯片10的面露出。而且，第2通孔24可如上所述形附有圆锥面26，与此相对应，在导电构件28的侧面也可形成圆锥形。再有，半导体装置的其它结构，则如制造方法中所述。
按照本实施例的半导体装置，借助于设置在通孔(例如第2通孔24)内的导电构件28，可使半导体芯片10的一个面和另一个面实现电连接。在半导体芯片10的内部，由于可期求两个面之间的导通，可以提供小型的半导体装置。
如图2C所示，可使采取上述方法形成的多个半导体芯片10(半导体装置1)层叠起来。详细而言，上下的半导体芯片10经导电构件28进行电连接。即，可制造层叠结构的半导体装置。如图所示，使与一片半导体芯片10的电极14形成面相背的面与另一片半导体芯片10的电极14形成面相向，可使上下的半导体芯片10层叠起来。或者，可使电极14两形成面之间相向，也可使与之相背的面之间相向，也可将这些方式组合起来，层叠三个以上的半导体芯片10。
上下的半导体芯片10可通过焊锡30进行电连接。焊锡30可预先设置在某一个或两个半导体芯片10上。焊锡30可装载成球形，或者可依赖熔融时的表面张力设置在上下的半导体芯片10之间。
焊锡30在半导体芯片10的电极14(镀层16)上，与另一半导体芯片10的导电构件28相键合。此处，焊锡30连接上下的半导体芯片10，同时在设置于电极14(镀层16)这一面的半导体芯片10上的电极14和用绝缘材料22绝缘的导电构件28电连接起来。即，在上下的半导体芯片10层叠的同时，在设置于电极14(镀层16)这一面的半导体芯片10上可期求在电极14和导电构件之间实现电连接。据此，可期求简化制造工序。或者，在层叠之前，在1片半导体芯片10上，预先也可将电极14和导电构件28电连接起来。此时，假如敷设图中没有示出的导电材料(例如导电膏)，使之覆盖电极14(镀层16)和导电构件28，则可期求实现两者之间的电连接。在图示的例子中，最上层的半导体芯片10通过上述没有在图中示出的导电材料使电极14和导电构件28电连接起来。
再有，上下的半导体芯片10的连接形态除焊锡30外，也可应用导电树脂膏(包含各向异性导电材料)，或借助于Au-Au或Au-Sn等的金属键合或借助于绝缘树脂的收缩力的键合等之中的某一形态。例如，在要进行金属键合时，可设置凸点连接到与半导体芯片10的电极14形成面相背的面上的导电构件28，再使之键合到另一半导体芯片10的电极14(镀层16)上。
在最下层的半导体芯片10上，也可将焊锡30设置在与朝向另一半导体芯片10的面相背的面上。焊锡30可设置成上述那样的球形。焊锡30也可如图所示，在与半导体芯片10的电极14形成面相背的面上形成，或在朝向电极14的面上形成。通过在最下层的半导体芯片10上设置焊锡30，很容易安装到电路基板(母板)或供安装到电路基板的基板(中介板)上。
或者，在最下层的半导体芯片10上不使焊锡30形成为球形，而是在安装到电路基板上时，在电路基板一侧的布线图形上涂布焊膏，可藉其熔融时的表面张力期求实现电连接。再有，在最下层的半导体芯片10，形成电极14的面既可朝向电路基板，也可朝向与之相背的面。再有，半导体装置与电路基板的电连接形态也可应用以上记述的形态。
根据本实施例，因为在半导体芯片10的第2通孔24内设置了导电构件28，可期求在半导体芯片10的一个面与另一个面之间实现电连接。如导电构件28设置成通过用绝缘材料22围起来的第2通孔24的中心轴，确实可期求实现与电极14的导通。还有，借助于贯通半导体芯片10的导电构件28，使多个半导体装置层叠起来，就最小的大小而言，例如很容易制造三叠以上叠层结构的半导体装置。
图3是本实施例的变例的半导体装置的制造方法的说明图。在本变例中，将绝缘材料22作为粘结剂使用，使上下的半导体芯片10贴合在一起。绝缘材料22可以是树脂。树脂最好是热固化性树脂。树脂设置在与半导体芯片10的电极14形成面相背的面上。
首先，在将多个半导体芯片10层叠以前，将树脂加热，使其粘结力显现出来。换言之，将树脂加热到成为固化未曾终结的状态(半固化状态)的程度。据此，将敷设在半导体芯片10的面上的树脂作为粘结剂使用，可使上下的半导体芯片10贴合在一起。
然后，使多个半导体芯片10层叠起来，同时借助于敷设在一片半导体芯片10上的树脂来粘结上下的半导体芯片10。即，树脂在上下的半导体芯片10之间紧密敷设在各自半导体芯片10的面上。据此，由于用树脂埋设在各自的半导体芯片10之间，可以减缓施加在半导体装置上的应力(热应力等)。
使上下的半导体芯片10贴合在一起后，将树脂加热使之固化。详细而言，使上下的半导体芯片10贴合时处于半固化状态的树脂加热到树脂的固化成为终结状态的程度。此时，可使树脂固化收缩，即，通过使与各自半导体芯片10的面粘结的树脂固化收缩，使上下的半导体芯片10紧贴。据此，一片半导体芯片10的导电构件28(焊锡30)与另一片半导体芯片10的电极14(镀层16)依靠树脂的收缩力可进行机械的连接，即，无须另行将半导体芯片10朝向另一半导体芯片10挤压。因此，可期求制造工序的简化。
再有，作为粘结剂使用的树脂，可采用不同于上述绝缘构件22的工序设置。即，不同于在第1通孔18内侧设置的绝缘构件22，可在与半导体芯片10的电极14形成面相背的面上设置树脂。
在本变例中，示出了采用作为粘结剂使用的树脂埋置于上下的半导体芯片10之间的例子，但也可在上下的半导体芯片10层叠以后，应用将树脂注入到两者之间的方法。此时，也可使树脂充填到上下的半导体芯片10之间，减缓施加到半导体装置的应力(热应力等)。
本变例的半导体装置4包括多片半导体芯片10和在各自的半导体芯片10之间埋置的树脂(绝缘材料22)，其形态如前所述。
(第2实施例)
图4A和图4B是应用本发明的第2实施例的半导体装置的制造方法示意图。在本实施例中，导电构件28的形成方法与上述不同。
如图4A所示，在本实施例中，备有第1和第2半导体芯片11、13。第1和第2半导体芯片11、13可借助于上述工序在各自的半导体芯片的电极14的位置形成贯通的第2通孔24。在本实施例中，导电构件为固态，设置于第2半导体芯片13的第2通孔24的内侧。导电构件也可以是凸点32。凸点32可由焊锡或金等形成。
设置凸点32并将其连接到第1半导体芯片11的电极14(镀层16)上。详细而言，当将第1和第2半导体芯片11、13层叠起来配置时，预先在成为下侧的第1半导体芯片11的电极14(镀层16)上形成凸点32。在图示的例子中，第1半导体芯片11是借助于上述实施例中的制造方法在第2通孔24内充填了导电膏的半导体芯片10。凸点32在第1半导体芯片11各自的电极14上形成。如图所示，凸点32也可使多个凸点层叠起来形成。此时，可使不同种类的金属凸点之间层叠起来。例如，可从电极14起层叠金凸点，再在其上层叠焊锡凸点。如图所示，凸点32能以超过第2通孔24深度的高度形成。凸点32的直径，至少其尖端部(仅为尖端部或全部)以穿入第2通孔24的大小形成。
凸点32的形成方法有镀覆法、蒸发法或球凸点法等，可应用某一方法。特别是，由于采取将键合导线熔融形成为球形的球凸点法，很容易使多个凸点层叠起来，故很容易形成具有设定以上高度(例如为超过第2通孔24深度的高度)的层叠凸点32。
借助于凸点32，在第1半导体芯片11上，可期求实现电极14和导电构件28(导电膏)之间的电连接。据此，由于供设置在第2半导体芯片13上之用的凸点32的配置，与第1半导体芯片11上的电极14和导电构件28的电连接同时进行，可期求制造工序的简化。在凸点32形成以后，将设置在第1半导体芯片11上的凸点32嵌入第2半导体芯片13的第2通孔24内。凸点32可贯通第2通孔24，或不使第2通孔24贯通，而将尖端部位于通孔24的内侧。还有，凸点32的基部可位于第2通孔24的外侧，使得它从第2半导体芯片13的绝缘材料22的面突出。再有，如图所示，在第2通孔24内附有上述圆锥面26的情形中，可很容易使凸点32进入第2通孔24内。
将凸点32嵌入第2通孔24以后，可使凸点32熔融。在这种情形，凸点32以用焊锡形成为宜。通过使凸点32熔融，可将导电构件充填到第2通孔24内。即，通过填埋第2半导体芯片13的第2通孔24的间隙，可增强第2半导体芯片13的机械强度。
或者，假若是由诸如金之类构成的凸点32，如图所示，插入时的形态则一如既往，可将凸点32在第2通孔24的内侧形成。总之，确实可使导电构件在第2通孔24的中心轴上形成。
如图4B所示，在将第1和第2半导体芯片11、13层叠起来以后，同样，为了又层叠半导体芯片，可将凸点32在最上层的第2半导体芯片13上形成。由此，在第2半导体芯片13内，可期求实现电极14和第2通孔24内的导电构件(凸点32)之间的电连接。
按照以上工序，在用凸点32使第1和第2半导体芯片11、13的两面导通的同时，也可使第1和第2半导体芯片11、13层叠起来。因此，可期求制造工序的简化。
作为本实施例的第1变例，在另外的构件(例如基板之类)上预先按上述结构设置凸点32，将半导体芯片10重叠在上述另外的构件上，以此将凸点32嵌入半导体芯片10的第2通孔24以后，将凸点32从上述另外的构件剥离，即可在半导体芯片10上设置导电构件。即，采用转移法可将凸点32嵌入半导体芯片10的第2通孔24内，假若它突出于例如与电极14形成面相背一侧的外侧，则层叠到另一半导体芯片10上时，以突出的部分作为基准可使半导体芯片10的位置对准变得很容易。再有，本变例的半导体装置的结构及其效果，则如已经说明的那样。
图5是本实施例的第2变例的半导体装置一部分的示意图。在本变例中，多片半导体芯片60、62、64、66层叠起来，在上下的半导体芯片的连接中，某一半导体芯片的导电构件(例如凸点32)电连接到下侧半导体芯片的电极14上避开第2通孔68的部分。换言之，在一个电极14的平面视图中，设置成连接导电构件的部分和第2通孔68的开口部分在平面上并不重叠。
据此，在将多片半导体芯片60～66层叠起来以前，可预先将供电极14电连接而设置的凸点32设置在电极14(镀层16)的面上。即，由于凸点32并不设置在下侧半导体芯片的第2通孔68上，可期求与电极14的大致平坦的面在较稳定的状态下实现电连接。
此外，凸点32无须与下侧半导体芯片的电极14和设置在下侧半导体芯片的第2通孔68内的另一凸点32两者同时进行电连接。即，凸点32与下侧半导体芯片的电极14的电连接工序和下侧半导体芯片的电极14与下侧半导体芯片的第2通孔68内的凸点32的电连接工序可分别进行。由此，可减少电连接不良情形，提高制造成品率。
再有，电极14和为贯通形成了该电极14的半导体芯片而设置的导电构件(例如凸点32)可借助于导电膏等导电材料70进行电连接。详细而言，可将导电材料70设置成覆盖住电极14(镀层16)和导电构件(例如凸点32)，以实现两者的电连接。
本变例中的其它形态是将多片半导体芯片60～66中的上下层叠的任意2片芯片作为第1和第2半导体芯片，可应用上述内容。还有，本变例的半导体装置的制造方法，则如已经说明的那样。
(第3实施例)
图6A和6B是应用本发明的第3实施例的半导体装置的制造方法示意图。在本实施例中，第2通孔25的形态与上述不同。
如图6A所示，在本实施例中，第2通孔25附有圆锥面而形成。详细而言，第2通孔25可形成为附有越远离半导体芯片10的电极14就变得越小的圆锥面27。第2通孔25可从例如半导体芯片10的电极14一侧照射激光光束而形成，或者从与电极14相背的一侧照射激光光束而形成。再有，第2通孔25的其它形态和形成方法则如上所述。
图6B具有形成上述第2通孔25的半导体芯片10，是一种层叠结构的半导体装置5的示意图。第2通孔25内设置通过其中心轴的导电构件34。在图示的例子中，在第2通孔25内埋置导电构件34。例如，导电构件34可用这样的方法形成：在第2通孔25内嵌入固态凸点，使该凸点熔融，充填到第2通孔25内，再使之固化即成。该情形下凸点可以是焊锡凸点。固化了的导电构件34的一部分可从第2通孔25内孔径小的一侧的开口部突出。据此，凭借第2通孔25的内表面所附的圆锥面27，可期求制止导电构件34松脱。详细而言，如图所示，在整体地将导电构件34设置在第2通孔25的内侧和从第2通孔25的小孔径开口部向外侧突出的部分时，导电构件34会难以从第2通孔25松脱。再有，其它结构和效果也与上述相同。
上述半导体装置的制造方法是对半导体芯片10进行的，然而如图7所示，这也可对半导体晶片40(半导体元件)进行。磨薄半导体晶片原先的厚度，可使用磨薄后的半导体晶片进行上述工序。在应用上述制造方法使多个半导体晶片40上下层叠以后，可再切割成一个一个的半导体芯片10。详细而言，层叠以后的多个半导体晶片40按上下方向切断，可分割成层叠结构的半导体芯片10。或者，直至上下层叠工序以前，对半导体晶片40进行上述工序，其后，则可使切割后的各个半导体芯片10层叠起来，制造层叠结构的半导体装置。这样一来，通过对半导体晶片40进行上述工序，可以高效率地制造半导体装置。再有，关于半导体晶片，可将本发明应用于一种称为晶片CSP的对半导体晶片进行了再配置布线处理的工序和设置了应力减缓结构的工序。
图8示出了在应用了本发明的实施例中安装了半导体装置7的电路基板50。电路基板50一般使用诸如玻璃环氧树脂基板之类的有机类基板。在电路基板50上形成例如由铜等构成的布线图形52，使之成为所要的电路，依靠在这些布线图形52和半导体装置7的焊锡30之间的机械式连接以期求实现它们的电导通。
或者，应用第2实施例的半导体装置的制造方法，在例如电路基板50的布线图形52上预先形成球凸点之类的凸点32，通过将半导体芯片10(1个或形成叠层结构的多个半导体芯片10)装载在其上，可将凸点32嵌入第2通孔24内。
或者，为了将半导体装置7安装到电路基板50上，可将其先安装到图中没有示出的基板(中介板)上，借助于该基板上形成的外部端点可期求实现与电路基板50之间的电连接。
而且，作为在应用本发明的实施例中具有半导体装置的电子装置，在图9上示出了笔记本型个人计算机100，在图10上示出了移动电话200。
再有，将上述实施例中的「半导体芯片」置换成「电子元件」，可以制造电子部件。作为使用这样的电子元件制成的电子部件有诸如光元件、电阻器、电容器、线圈、振荡器、滤波器、温度传感器、热敏电阻、变阻器、音量器或熔断器等。

Claims (21)

1.一种半导体装置的制造方法，包括：
在具有电极的半导体元件上，在上述电极的位置形成贯通的第1通孔的第1工序；
在包含上述第1通孔内侧的区域，敷设绝缘材料，使得备有贯通上述绝缘材料的第2通孔的第2工序；以及
在上述第1通孔内侧，至少贯通上述绝缘材料的第2通孔内设置导电构件的第3工序；
将制造的多个上述半导体元件层叠起来、经上述导电构件将上下的上述半导体元件电连接的工序；
其中，在上述第2工序中，敷设上述绝缘材料，使之覆盖住与上述半导体元件的上述电极形成面相背的面，并敷设上述绝缘材料，以之填埋上述第1通孔，在上述第1通孔的内侧，形成上述第2通孔，使得它以小于上述第1通孔的孔径贯通上述绝缘材料；
上述绝缘材料由树脂构成，
采用上述树脂作为粘结剂使多个上述半导体元件贴合在一起，
将上述树脂加热，通过使上述树脂完成固化收缩，将上述导电构件与上述电极进行电连接。
2.如权利要求1所述的半导体装置的制造方法，其特征在于：
在使多个上述半导体元件贴合以前将上述树脂加热，使其粘结力显现出来。
3.如权利要求1所述的半导体装置的制造方法，其特征在于：
在上述第2工序中涂布敷设上述树脂。
4.如权利要求1至3中任何一项所述的半导体装置的制造方法，其特征在于：
上述导电构件是导电膏，
在上述第3工序中，使上述导电膏充填到上述第2通孔内。
5.如权利要求1至3中任何一项所述的半导体装置的制造方法，其特征在于：
形成上述第2通孔，使其附有越接近上述半导体元件的上述电极就变得越小的圆锥面。
6.如权利要求1至3中任何一项所述的半导体装置的制造方法，其特征在于：
形成上述第2通孔，使其附有越远离上述半导体元件的上述电极就变得越小的圆锥面。
7.如权利要求1至3中任何一项所述的半导体装置的制造方法，其特征在于：
上述第1通孔或上述第2通孔中至少某一方用激光光束形成。
8.如权利要求7所述的半导体装置的制造方法，其特征在于：
使上述激光光束照射与上述半导体元件的上述电极形成面相背的面。
9.一种半导体装置的制造方法，其特征在于，包括：
在具有电极的第1和第2半导体元件上，在上述电极的位置形成贯通的第1通孔的第1工序；
在包含上述第1通孔内侧的区域，敷设绝缘材料，使得备有贯通上述绝缘材料的第2通孔的第2工序；以及
将导电构件设置在上述第1半导体元件的上述电极上并与之电连接，将上述导电构件嵌入上述第2半导体元件的上述第2通孔内，同时将上述第1和第2半导体元件层叠起来的第3工序；
在上述第2工序中，敷设上述绝缘材料，以之填埋上述第1通孔，在上述第1通孔的内侧，形成上述第2通孔，使得它以小于上述第1通孔的孔径贯通上述绝缘材料。
10.如权利要求9所述的半导体装置的制造方法，其特征在于：
在上述第2工序中，敷设上述绝缘材料，使之覆盖住与上述半导体元件的上述电极形成面相背的面。
11.如权利要求10所述的半导体装置的制造方法，其特征在于：
上述绝缘材料由树脂构成，
采用上述树脂作为粘结剂使多个上述半导体元件贴合在一起，
将上述树脂加热，通过使上述树脂完成固化收缩，将上述导电构件与上述电极进行电连接。
12.如权利要求11所述的半导体装置的制造方法，其特征在于：
在使多个上述半导体元件贴合以前将上述树脂加热，使其粘结力显现出来。
13.如权利要求9所述的半导体装置的制造方法，其特征在于：
上述绝缘材料由树脂构成，
在上述第2工序中涂布敷设上述树脂。
14.如权利要求9至13中任何一项所述的半导体装置的制造方法，其特征在于：
上述导电构件是导电膏，
在上述第3工序中，使上述导电膏充填到上述第2通孔内。
15.如权利要求9所述的半导体装置的制造方法，其特征在于：
上述导电构件是凸点，
在上述第3工序中，将上述凸点的至少一部分嵌入上述第2半导体元件的上述第2通孔内。
16.如权利要求15所述的半导体装置的制造方法，其特征在于：
上述凸点多个层叠起来。
17.如权利要求15所述的半导体装置的制造方法，其特征在于：
在上述第3工序以后使上述凸点熔融并使之充填到上述第2通孔内。
18.如权利要求9至13中任何一项所述的半导体装置的制造方法，其特征在于：
形成上述第2通孔，使其附有越接近上述半导体元件的上述电极就变得越小的圆锥面。
19.如权利要求9至13中任何一项所述的半导体装置的制造方法，其特征在于：
形成上述第2通孔，使其附有越远离上述半导体元件的上述电极就变得越小的圆锥面。
20.如权利要求9至13中任何一项所述的半导体装置的制造方法，其特征在于：
上述第1通孔或上述第2通孔中至少某一方用激光光束形成。
21.如权利要求20所述的半导体装置的制造方法，其特征在于：
使上述激光光束照射与上述半导体元件的上述电极形成面相背的面。
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