CN1152102C - pH值缓冲的浆液及其在抛光中的应用 - Google Patents
pH值缓冲的浆液及其在抛光中的应用 Download PDFInfo
- Publication number
- CN1152102C CN1152102C CNB981238483A CN98123848A CN1152102C CN 1152102 C CN1152102 C CN 1152102C CN B981238483 A CNB981238483 A CN B981238483A CN 98123848 A CN98123848 A CN 98123848A CN 1152102 C CN1152102 C CN 1152102C
- Authority
- CN
- China
- Prior art keywords
- slurries
- acid
- polishing
- salt
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002002 slurry Substances 0.000 title claims abstract description 84
- 238000005498 polishing Methods 0.000 title claims abstract description 59
- 239000002253 acid Substances 0.000 claims abstract description 25
- 150000003839 salts Chemical class 0.000 claims abstract description 23
- 230000003139 buffering effect Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 25
- 239000003513 alkali Substances 0.000 claims description 17
- 239000000872 buffer Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 16
- 239000006061 abrasive grain Substances 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000004408 titanium dioxide Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 239000003870 refractory metal Substances 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229960004418 trolamine Drugs 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004327 boric acid Substances 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 3
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical group CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 3
- 229940095064 tartrate Drugs 0.000 claims description 3
- 238000007517 polishing process Methods 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229960001866 silicon dioxide Drugs 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten dioxide Inorganic materials O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 5
- 238000004377 microelectronic Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 150000007516 brønsted-lowry acids Chemical class 0.000 description 3
- 150000007528 brønsted-lowry bases Chemical class 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 239000008139 complexing agent Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- -1 iron ion Chemical class 0.000 description 3
- 150000001457 metallic cations Chemical class 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 229910021538 borax Inorganic materials 0.000 description 2
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 2
- 239000000920 calcium hydroxide Substances 0.000 description 2
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 2
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 2
- 229910000397 disodium phosphate Inorganic materials 0.000 description 2
- 235000019800 disodium phosphate Nutrition 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 2
- 239000001230 potassium iodate Substances 0.000 description 2
- 235000006666 potassium iodate Nutrition 0.000 description 2
- 229940093930 potassium iodate Drugs 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 235000017550 sodium carbonate Nutrition 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000004328 sodium tetraborate Substances 0.000 description 2
- 235000010339 sodium tetraborate Nutrition 0.000 description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 2
- WAQGCDLKIUXESA-UHFFFAOYSA-N [P].C1=CC=CC=C1 Chemical compound [P].C1=CC=CC=C1 WAQGCDLKIUXESA-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AXZAYXJCENRGIM-UHFFFAOYSA-J dipotassium;tetrabromoplatinum(2-) Chemical compound [K+].[K+].[Br-].[Br-].[Br-].[Br-].[Pt+2] AXZAYXJCENRGIM-UHFFFAOYSA-J 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229960004887 ferric hydroxide Drugs 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- IEECXTSVVFWGSE-UHFFFAOYSA-M iron(3+);oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Fe+3] IEECXTSVVFWGSE-UHFFFAOYSA-M 0.000 description 1
- 235000012204 lemonade/lime carbonate Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- BDRTVPCFKSUHCJ-UHFFFAOYSA-N molecular hydrogen;potassium Chemical compound [K].[H][H] BDRTVPCFKSUHCJ-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- 229910001487 potassium perchlorate Inorganic materials 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- BYGOPQKDHGXNCD-UHFFFAOYSA-N tripotassium;iron(3+);hexacyanide Chemical compound [K+].[K+].[K+].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] BYGOPQKDHGXNCD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Abstract
一种含有磨料颗粒和pH值缓冲组分的浆液特别适用于抛光表面，包括在微电子学中的应用，该浆液含有至少一种酸或其盐以及至少一种碱。
Description
本发明涉及特别适用于表面抛光的浆液组合物。本发明在微电子学中有特殊的用途。而且，本发明还可用于其他基材。本发明的浆液具有抗交叉污染的能力。
在微电子学工业中，在集成电路的制造过程中，为了使所涉及的表面抛平和/或除去不希望有的物质，通常将无划痕的表面抛光。所涉及的抛光为化学机械抛光。例如，将金属如铝、铜和钨抛平。这些金属的表面被氧化，以使抛光磨料不会产生划痕。而且，通常在铝、铜或钨等等要抛光的所述表面下面是难熔金属衬，它对底层绝缘体提供了良好的粘合以及对较低程度的金属化提供了良好的接触电阻。这些衬可为单独的铌、钽和钛，或与其氮化物的组合，或其他任何难熔金属。在实践中，为了达到所需要的抛光结果，常常需要采用多步法。例如，一次抛光用来除去大量的或主要量的毛坯材料，随后用二次抛光除去由一次抛光产生的划痕和/或除去不同的底层材料或衬材料。通常，在这两个抛光步骤在分开的抛光工作台上进行。但是，在每一台抛光机上常常有两个或两个以上抛光工作台，以致全部步骤可在一套机器上完成。每一抛光步骤的每一方面，例如抛光垫、操作的机械速度以及抛光浆液都按其特定的功能调制。因此，用于一次抛光步骤的浆液在其化学组成方面常常与用于二次抛光步骤的浆液很不相同。
当一种抛光浆液被污染时，例如带有一定数量的其他浆液、清洗材料或抛光步骤的副产物，常常遇到这样一个问题。例如，当很少量(例如几滴)一次扫光浆液留在晶片或晶片载体上，然后沉积在二次抛光步骤的抛光台板上，并在使用二次抛光浆液点与二次抛光浆液混合，通常会出现交叉污染。在这种情况下，一次浆液含有相对高浓度的化学品或离子，当与二次浆液混合时，甚至几滴就可使二次浆液的效率下降。当高度酸性的浆液用作一次浆液以及相对中性的浆液用作二次浆液时，这是常见的例子。在这样的情况下，甚至几滴酸性浆液就可使中性浆液变成酸性，从而使其效率下降。以前为克服这一问题所作的努力包括在各抛光步骤之间，在去离子水中充分清洗晶片和载体，以及在抛光步骤之间建隔板，以便防止一种浆液飞溅到另一种浆液中。但是，以前的这些解决办法是不能令人完全满意的，因为晶片必需从一个抛光台板到另一台板，而又不进行干燥，而且两个抛光工作台彼此紧靠着。因此，人们希望能解决这一污染问题。
本发明提供了一种浆液组合物，它能抵抗例如由交叉污染引起的浆液pH值的变化。因此，本发明提供了能克服现有技术存在的上述问题、适用于抛光的浆液组合物。具体地说，本发明提供了能抵抗pH值变化的浆液。
本发明涉及含有磨料颗粒和pH值缓冲组分的浆液组合物。pH值缓冲组分含有至少一种酸或其盐或其混合物以及至少一种碱或其盐或其混合物。酸或盐的浓度为约10-5至约102M。碱和/或其盐的浓度为约10-5至约102M。浆液的pH值为约3至小于11，特别是3-7。
本发明还涉及一种表面抛光的方法。本发明的方法包括在要抛光的表面上提供上述类型的浆液。然后通过其上有浆液的表面与抛光垫接触来抛光表面。
在上述可供选择的方法中还包括首先通过所述表面与含有磨料颗粒、其pH值为约1至约5的第一次浆液接触，然后其上有所述浆液的表面与抛光垫接触使所述表面抛光；随后将含有磨料颗粒和pH值缓冲组分的浆加在所述表面上，该pH值缓冲组分含有至少一种酸或其盐或其混合物，其浓度为约10-5至约102M以及含有至少一种碱或其盐或其混合物，其浓度为约10-5至约102M；通过所述表面与抛光垫接触来抛光其上有所述的二次浆液的所述表面，所述的酸或其盐选自柠檬酸、硼酸、草酸、盐酸、硫酸、酒石酸、硝酸、苹果酸、甲酸、乳酸、苯甲酸、邻苯二甲酸氢钾、磷酸二氢钾、磷酸氢二钠及其混合物；以及所述的碱或其盐选自氢氧化钾、氢氧化钠、氢氧化钙、磷酸三钠、碳酸钠、碳酸氢钠、硼砂、氢氧化铵、三乙醇胺、三(羟甲基)氨基甲烷。
对于熟悉本专业的技术人员来说，本发明的其他目的和优点从以下的详述中将变得很清楚，其中它只说明和描述了本发明优选的实施方案，作为简单说明实施本发明的最好方式。正如已认识到的，在不违背本发明实质的条件下，本发明能有其他的和不同的实施方案，其一些细节可在许多方面作改变。因此，这一描述看作是对本发明的说明，而不是限制。
图1为加入含硝酸铁的浆液对未缓冲的氧化硅浆液和经缓冲的氧化硅浆液pH值的影响图。
图2为抛光速率随pH值变化图。
根据本发明，提供一种含有磨料颗粒和pH值缓冲组分的浆液。缓冲组分含有至少一种酸和/或其盐以及至少一种碱和/或其盐。通常，这种酸或其盐为一种相对弱的酸或盐，其pKa为约2至约7。同样，所用的碱或其盐通常是一种弱碱，其pKa为约7至约11。适用的酸或盐的例子包括有机酸或其盐和无机酸或其盐，例如乙酸、柠檬酸、硼酸、草酸、酒石酸、苹果酸、甲酸、乳酸、苯甲酸、硝酸、磷酸、盐酸、硫酸、磷苯二甲酸氢钾、磷酸二氢钾、乙二胺四乙酸(EDTA)和磷酸氢二钠。适用的碱及其盐的例子包括氢氧化钾、氢氧化钠、氢氧化钙、氢氧化铵、叔胺例如三乙醇胺、磷酸三钠、碳酸钠、碳酸氢钠、硼砂、碳酸钙和三(羟甲基)氨基甲烷。酸和碱的数量可在宽范围内变化，熟悉本专业的技术人员，一旦了解本发明的公开内容，在没有过多实验的情况下，就很容易确定这些数量。
通常，每种酸或其盐以及碱的浓度为约10-5至约102M、更通常为约10-3至约10-2M，它与酸和碱的浓度、要缓冲的浆液的原pH值以及对于特定抛光应用所需的pH值和缓冲剂能力有关。此外，经缓冲交浆液的最终pH值不需与浆液最初的pH值相同，但为了优化浆液对任何特定抛光操作的抛光速率，也可改变最终的pH值。
作为背景，因为当酸或碱已达到其溶解平衡时，酸或碱不总是完全溶解的，它们起缓冲作用。所以，酸或碱的溶解平衡可受加入的共同离子H+或OH-的影响。因此，当这些离子中的一种加到溶液(对应于酸或碱污染)中时，溶解平衡或多或少地缓冲酸或碱的溶解，它有助于保持浆液的pH值，正如在Petrucci，普通化学，原理和现代应用，第4版，McMillan，纽约，1985，第539页所述。
当缓冲基于氧化硅的浆液时，本发明使用的最优选的缓冲剂组合为乙酸和氢氧化铵的组合。具体地说，该组合在浆液中有高的溶解度，不会使磨料从溶液中沉淀出来，不会引起固化和/或凝胶。此外，这种缓冲剂组合的优点是不合金属阳离子。而且，使用本发明的缓冲剂不会降低抛光速率。
所用的磨料颗粒包括通常用于抛光浆液的那些磨料。适合的磨料颗粒的例子包括氧化铝、氧化硅、氧化铁、氧化锆、氧化铈、二氧化钛及其混合物。磨料颗粒的粒度一般为约10至约1000纳米、优选约50至约200纳米。磨料颗粒的数量一般为约0.2至约20％(重量)、优选约1至约5％(重量)。此外，浆液优选为含水浆液。适用的其他类型浆液包括有机溶剂例如碳酸亚丙酯和一元和多元醇例如甲醇、乙醇、乙二醇和甘油作为稀释剂的那些浆液。当然，当需要时，这些稀释剂的混合物以及与水的混合物也可使用。
此外，当抛光金属例如钨、铝或铜以及衬例如难熔金属及其氮化物(包括铌、钽、钛及其氮化物在内)时，该浆液组合物通常含有化学刻蚀剂，以便使抛光过程更容易。代表性的刻蚀剂为硝酸铁、碘酸钾、硝酸铵铈、铁氰化钾、硝酸银、次氯酸钠、高氯酸钾、高锰酸钾或过氧化氢。通常，刻蚀剂的用量为约0.1至约5mol、更通常为约0.2至约1mol。
用于本发明的典型两步法的一个例子涉及抛光金属连接(件)例如钨、铝或铜。在许多情况下使用的最初浆液的pH值为约1至约6、更通常约2，它可引起所用的二次浆液的pH值显著变化，后者的pH值通常为约2至约10，例如5。图1说明将少量含有5％(重量)硝酸铁、1％(重量)氧化铝和94％(重量)水的一次浆液加到通常用作二次抛光浆液组合物的含氧化硅的浆液中的影响。仅将几滴一次浆液加到二次浆液中就使浆液的pH明显变化，从而使钛的抛光速率下降约40％。参见图2，它说明钛抛光速率随pH值的变化。另一方面，图1也说明通过使用本发明的缓冲技术，在加入一次浆液时，二次浆液的pH值基本上不变(参见图1中的曲线2)。
此外，在二次浆液中所含的缓冲材料不会明显改变抛光速率。例如，典型的未缓冲的氧化硅浆液以730埃/分的速率抛光钛。当用2×10-3M乙酸和1×10-3M氢氧化钾缓冲时，氧化硅浆液以约745埃/分的速率抛光钛。
本发明的另一优点是抛光后提高晶片净化度的能力。大家都很清楚，从硅晶片表面净化或除去残留的磨料颗粒例如氧化铝、氧化硅、氧化铈、二氧化钛、氧化铁或氧化锆是十分困难的。例如，参见US 5320706和5525191。这一点部分是由小的磨料颗粒和硅晶片都存在由pH值决定的小的表面电荷所引起的。在晶片上的表面电荷与颗粒的相反的pH值下，两者之间存在强的静电吸引，从而在污染颗粒和晶片表面之间产生强的键联。
一旦它形成，要破坏这一相对强的键联，从而除去污染颗粒便很困难而且成为一个挑战性的问题。通过使用抵抗pH值变化的缓冲浆液，可防止颗粒粘附到晶片表面上。作为一个例子，在pH值6.2下，氧化硅晶片有负的表面电荷；而二氧化钛颗粒有中性的表面电荷，从而使二氧化钛对氧化硅表面的吸引相对较弱。(参见Parks，“固体氧化物、固体氢氧化物和含水的氢氧化物络合物体系的等电离点”，化学评述(1965)，第177-198页)。但是，由于污染的结果，pH值变化到约4，使二氧化钛颗粒产生正的表面电荷，而氧化硅晶片仍保持其负电荷。这样就使颗粒和氧化硅晶片之间产生强得多的吸引。
在这样的情况下，为了防止由于污染引起的pH值变化使二氧化钛磨料颗粒和硅晶片的表面电荷变化，将浆液的pH值在6.2进行缓冲是有利的。
根据本发明的某些方面，本发明的浆液组合物也可易于除去可能引起积成电路的电故障的残留金属阳离子污染物，例如Fe3+、Mg2+、Ca2+、K+和Na+。而且，这些污染物是极难除去的。例如，参见US 5230833，该专利说明，为了具体地解决这一问题，已进行了相当大的努力来生产低金属离子浓度的浆液。但是，在金属抛光中，常常需要常称为氧化剂的含有金属阳离子的刻蚀剂，例如硝酸铁和碘酸钾。本发明用作缓冲剂的某些酸和碱还可作为这些金属阳离子的络合剂。例如，柠檬酸、草酸和三乙醇胺可络合Fe3+，它是一种许多常用的金属抛光组合物中存在的阳离子。
此外，本发明含有也起络合剂作用的酸和/或碱的这些浆液组合物可防止不溶性金属氢氧化物沉淀，这些不溶性金属氢氧化物反过来可引起底层硅晶片划痕。作为例子，一种浆液含有铁离子而另一种的pH值大于6，当相互接触时例如可在抛光垫上产生氢氧化铁沉淀，反过来这种沉淀可产生划痕。在这种情况下，一种也可作为铁离子的络合剂的酸或碱优选含在较高pH值(约6)的浆液中。反过来它使铁离子络合，从而防止从溶液中沉淀出任何氢氧化物。
熟悉本专业的技术人员一旦了解了本发明的公开内容，在无需进行过多实验的条件下，就能决定抛光或抛平(planarizing)的参数。例如，扫光垫的旋转速度为约10至约150转/分，晶片载体的旋转速度为约10至约150转/分，向下力为约2至约10psi。抛光垫为通常用于微电子学抛光的那些抛光垫。
根据本发明，可抛光的表面包括：氧化硅、铝、铜、钨以及难熔金属。例如铌、钽、钛及其氮化物。
本发明的上述描述说明和描述了本发明。此外，公开内容仅说明和描述了本发明的优选实施方案，但正如上述，应当理解，本发明能用于各种其他组合、改进和环境，可在这里所述的本发明实质范围内作出与上述公开内容和/或相关技术的知识相匹配的改变或改进。上述实施方案还打算说明实施本发明已知的最好方式，以及打算使熟悉本专业的其他技术人员能以这些实施方案或其他实施方案使用本发明，以及特定应用所需的各种改进或本发明的应用。因此，不打算用这一描述把本发明限制到这里所公开的形式。此外，打算将附后的权利要求书看作包括替代的实施方案。
Claims (19)
1.一种表面抛光的方法，该法包括：包括首先通过所述表面与含有磨料颗粒且pH值为1至6的第一浆液接触，然后将上面有所述浆液的表面与抛光垫接触和抛光；随后将含有磨料颗粒和pH值缓冲组分的pH3-11的不同的第二浆液提供在所述表面上，该pH值缓冲组分含有至少一种酸或其盐或其混合物，其浓度为10-5至102M以及含有至少一种碱或其盐或其混合物，其浓度为10-5至102M；并且其中第二浆液的缓冲组分不含金属阳离子；以及通过所述表面与抛光垫接触来抛光其上有所述的二次浆液的所述表面。
2.权利要求1的方法，其中所述的酸或其盐选自乙酸、柠檬酸、硼酸、草酸、盐酸、硫酸、酒石酸、硝酸、苹果酸、甲酸、乳酸、苯甲酸及其混合物，以及所述的碱及其盐选自氢氧化铵、三(羟甲基)氨基甲烷和三乙醇胺。
3.根据权利要求2的方法，其中第一浆液的pH为2且第二浆液的pH为5。
4.根据权利要求1的方法，其中所述的磨料颗粒选自氧化铝、氧化硅、氧化锆、氧化铈、二氧化钛、氧化铁及其混合物。
5.根据权利要求1的方法，其中所述的磨料颗粒的粒度为10至1000纳米。
6.根据权利要求1的方法，其中所述的浆液为含水浆液。
7.根据权利要求6的方法，其中所述的浆液还含有一种有机稀释剂。
8.根据权利要求7的方法，其中所述的有机稀释剂选自碳酸亚丙酯、甲醇、乙醇、乙二醇、甘油及其混合物。
9.根据权利要求1的方法，其中所述的浆液含有一种有机稀释剂。
10.根据权利要求9的方法，其中所述的有机稀释剂选自碳酸亚丙酯、甲醇、乙醇、乙二醇、甘油及其混合物。
11.根据权利要求1的方法，其中所述的表面选自铝、铜、钨和二氧化硅。
12.根据权利要求1的方法，其中要抛光的所述表面下面是难熔的金属衬。
13.根据权利要求12的方法，其中所述的难熔金属衬选自铌、钽、钛及其氮化物以及它们的混合物。
14.根据权利要求1的方法，其中在所述的抛光过程中，所述垫的速度为10至150转/分，晶片载体的速度为10至150转/分。
15.根据权利要求1的方法，其中用第二浆液抛光除去因第一抛光浆液造成的擦痕。
16.根据权利要求1的方法，其中用第二浆液抛光除去的下面的物质与第一抛光浆液除去的不同。
17.根据权利要求1的方法，其中第一浆液的pH为2且第二浆液的pH为5。
18.根据权利要求1的方法，其中抛光表面主要包括先使表面与所述第一浆液接触并使所述表面与抛光垫接触，然后在所述表面上提供所述不同的第二浆液并通过使表面与抛光垫接触抛光表面。
19.根据权利要求1的方法，其中所述缓冲组分提供的缓冲浆液耐因所述第一浆液和第二浆液之间pH不同造成的pH改变，并且不显著改变所述第二浆液的抛光速率。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US965,218 | 1978-11-30 | ||
| US965218 | 1997-11-06 | ||
| US08/965,218 US6190237B1 (en) | 1997-11-06 | 1997-11-06 | pH-buffered slurry and use thereof for polishing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1218077A CN1218077A (zh) | 1999-06-02 |
| CN1152102C true CN1152102C (zh) | 2004-06-02 |
Family
ID=25509651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB981238483A Expired - Fee Related CN1152102C (zh) | 1997-11-06 | 1998-11-05 | pH值缓冲的浆液及其在抛光中的应用 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6190237B1 (zh) |
| KR (1) | KR100307342B1 (zh) |
| CN (1) | CN1152102C (zh) |
Families Citing this family (66)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040134873A1 (en) * | 1996-07-25 | 2004-07-15 | Li Yao | Abrasive-free chemical mechanical polishing composition and polishing process containing same |
| US6332835B1 (en) * | 1997-11-20 | 2001-12-25 | Canon Kabushiki Kaisha | Polishing apparatus with transfer arm for moving polished object without drying it |
| US6294105B1 (en) * | 1997-12-23 | 2001-09-25 | International Business Machines Corporation | Chemical mechanical polishing slurry and method for polishing metal/oxide layers |
| JP4113282B2 (ja) * | 1998-05-07 | 2008-07-09 | スピードファム株式会社 | 研磨組成物及びそれを用いたエッジポリッシング方法 |
| US6177026B1 (en) * | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
| US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
| US6533832B2 (en) * | 1998-06-26 | 2003-03-18 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry and method for using same |
| TW512170B (en) * | 1998-07-24 | 2002-12-01 | Ibm | Aqueous slurry composition and method for polishing a surface using the same |
| US6428715B1 (en) * | 1998-12-22 | 2002-08-06 | International Business Machines Corporation | Method for producing sliders |
| JP3941284B2 (ja) * | 1999-04-13 | 2007-07-04 | 株式会社日立製作所 | 研磨方法 |
| US6592433B2 (en) * | 1999-12-31 | 2003-07-15 | Intel Corporation | Method for defect reduction |
| US6976905B1 (en) * | 2000-06-16 | 2005-12-20 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system |
| US6896776B2 (en) * | 2000-12-18 | 2005-05-24 | Applied Materials Inc. | Method and apparatus for electro-chemical processing |
| US20030017785A1 (en) * | 2001-03-02 | 2003-01-23 | Kazumasa Ueda | Metal polish composition and polishing method |
| US7582564B2 (en) * | 2001-03-14 | 2009-09-01 | Applied Materials, Inc. | Process and composition for conductive material removal by electrochemical mechanical polishing |
| US6811680B2 (en) * | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
| US7323416B2 (en) * | 2001-03-14 | 2008-01-29 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US6899804B2 (en) * | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
| US7160432B2 (en) * | 2001-03-14 | 2007-01-09 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7232514B2 (en) * | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7128825B2 (en) * | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US20060169597A1 (en) * | 2001-03-14 | 2006-08-03 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| KR100557600B1 (ko) * | 2001-06-29 | 2006-03-10 | 주식회사 하이닉스반도체 | 나이트라이드 cmp용 슬러리 |
| US6638145B2 (en) | 2001-08-31 | 2003-10-28 | Koninklijke Philips Electronics N.V. | Constant pH polish and scrub |
| US6585567B1 (en) | 2001-08-31 | 2003-07-01 | Koninklijke Philips Electronics N.V. | Short CMP polish method |
| US6705926B2 (en) * | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
| US6554909B1 (en) * | 2001-11-08 | 2003-04-29 | Saint-Gobain Ceramics & Plastics, Inc. | Process for cleaning components using cleaning media |
| US20070295611A1 (en) * | 2001-12-21 | 2007-12-27 | Liu Feng Q | Method and composition for polishing a substrate |
| JP2003218084A (ja) * | 2002-01-24 | 2003-07-31 | Nec Electronics Corp | 除去液、半導体基板の洗浄方法および半導体装置の製造方法 |
| US6682575B2 (en) * | 2002-03-05 | 2004-01-27 | Cabot Microelectronics Corporation | Methanol-containing silica-based CMP compositions |
| KR100499403B1 (ko) * | 2002-03-06 | 2005-07-07 | 주식회사 하이닉스반도체 | 슬러리 제조 방법 |
| US6803323B2 (en) * | 2002-05-30 | 2004-10-12 | Freescale Semiconductor, Inc. | Method of forming a component overlying a semiconductor substrate |
| US6604987B1 (en) | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
| US20100009540A1 (en) * | 2002-09-25 | 2010-01-14 | Asahi Glass Company Limited | Polishing compound, its production process and polishing method |
| AU2003266619A1 (en) * | 2002-09-25 | 2004-04-19 | Asahi Glass Company, Limited | Polishing compound composition, method for producing same and polishing method |
| US7300601B2 (en) * | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| WO2004101222A2 (en) * | 2003-05-12 | 2004-11-25 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same |
| US7736405B2 (en) * | 2003-05-12 | 2010-06-15 | Advanced Technology Materials, Inc. | Chemical mechanical polishing compositions for copper and associated materials and method of using same |
| US7390429B2 (en) * | 2003-06-06 | 2008-06-24 | Applied Materials, Inc. | Method and composition for electrochemical mechanical polishing processing |
| US20050092620A1 (en) * | 2003-10-01 | 2005-05-05 | Applied Materials, Inc. | Methods and apparatus for polishing a substrate |
| JP4974447B2 (ja) * | 2003-11-26 | 2012-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| US7390744B2 (en) * | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US7084064B2 (en) * | 2004-09-14 | 2006-08-01 | Applied Materials, Inc. | Full sequence metal and barrier layer electrochemical mechanical processing |
| US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
| KR100497413B1 (ko) * | 2004-11-26 | 2005-06-23 | 에이스하이텍 주식회사 | 텅스텐-화학적 기계적 연마에 유용한 슬러리 및 그 제조방법 |
| US20060169674A1 (en) * | 2005-01-28 | 2006-08-03 | Daxin Mao | Method and composition for polishing a substrate |
| WO2006081589A2 (en) * | 2005-01-28 | 2006-08-03 | Applied Materials, Inc. | Tungsten electroprocessing |
| US20060219663A1 (en) * | 2005-03-31 | 2006-10-05 | Applied Materials, Inc. | Metal CMP process on one or more polishing stations using slurries with oxidizers |
| US20060249395A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Material, Inc. | Process and composition for electrochemical mechanical polishing |
| US20060249394A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Materials, Inc. | Process and composition for electrochemical mechanical polishing |
| CN100472729C (zh) * | 2005-05-06 | 2009-03-25 | 旭硝子株式会社 | 铜配线研磨用组合物及半导体集成电路表面的研磨方法 |
| US7678702B2 (en) * | 2005-08-31 | 2010-03-16 | Air Products And Chemicals, Inc. | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use |
| US20070075042A1 (en) * | 2005-10-05 | 2007-04-05 | Siddiqui Junaid A | Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method |
| US20070228011A1 (en) * | 2006-03-31 | 2007-10-04 | Buehler Mark F | Novel chemical composition to reduce defects |
| US20070254485A1 (en) * | 2006-04-28 | 2007-11-01 | Daxin Mao | Abrasive composition for electrochemical mechanical polishing |
| US7510974B2 (en) * | 2006-05-05 | 2009-03-31 | United Microelectronics Corp. | CMP process |
| US20080283502A1 (en) * | 2006-05-26 | 2008-11-20 | Kevin Moeggenborg | Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates |
| US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
| US20080242106A1 (en) * | 2007-03-29 | 2008-10-02 | Anuj Sarveshwar Narain | CHEMICAL MECHANICAL POLISHING METHOD AND APPARATUS FOR REDUCING MATERIAL RE-DEPOSITION DUE TO pH TRANSITIONS |
| US8252076B2 (en) * | 2007-12-05 | 2012-08-28 | 3M Innovative Properties Company | Buffing composition and method of finishing a surface of a material |
| US8436052B2 (en) * | 2010-01-07 | 2013-05-07 | Jack L. Collins | Formulation and method for preparing gels comprising hydrous cerium oxide |
| CN102554783B (zh) * | 2010-12-23 | 2014-12-03 | 中芯国际集成电路制造(上海)有限公司 | 研磨垫清洗方法 |
| CN102634284A (zh) * | 2012-03-27 | 2012-08-15 | 蓝思旺科技(深圳)有限公司 | 抛光液及其制造方法 |
| JP7306608B2 (ja) * | 2016-03-11 | 2023-07-11 | フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド | 高度な流体処理方法およびシステム |
| CN106883768A (zh) * | 2017-04-20 | 2017-06-23 | 宁波日晟新材料有限公司 | 微酸性条件下的碱性玻璃抛光液以及应用 |
| CN115573180A (zh) * | 2022-11-04 | 2023-01-06 | 绍兴丰禾科技有限公司 | 一种ph值稳定剂pa-45及制备工艺 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4680893A (en) | 1985-09-23 | 1987-07-21 | Motorola, Inc. | Apparatus for polishing semiconductor wafers |
| US4895675A (en) * | 1988-12-21 | 1990-01-23 | Pro-Max Performance, Inc. | Neutral pH wheel cleaner |
| US5084071A (en) * | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
| US5230833A (en) | 1989-06-09 | 1993-07-27 | Nalco Chemical Company | Low sodium, low metals silica polishing slurries |
| US5212910A (en) | 1991-07-09 | 1993-05-25 | Intel Corporation | Composite polishing pad for semiconductor process |
| US5197999A (en) | 1991-09-30 | 1993-03-30 | National Semiconductor Corporation | Polishing pad for planarization |
| US5320706A (en) | 1991-10-15 | 1994-06-14 | Texas Instruments Incorporated | Removing slurry residue from semiconductor wafer planarization |
| US5244534A (en) * | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
| US5209816A (en) | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
| US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| US5498199A (en) | 1992-06-15 | 1996-03-12 | Speedfam Corporation | Wafer polishing method and apparatus |
| US5554064A (en) * | 1993-08-06 | 1996-09-10 | Intel Corporation | Orbital motion chemical-mechanical polishing apparatus and method of fabrication |
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| JP2719113B2 (ja) * | 1994-05-24 | 1998-02-25 | 信越半導体株式会社 | 単結晶シリコンウェーハの歪付け方法 |
| US5525191A (en) | 1994-07-25 | 1996-06-11 | Motorola, Inc. | Process for polishing a semiconductor substrate |
| KR960041316A (ko) * | 1995-05-22 | 1996-12-19 | 고사이 아키오 | 연마용 입상체, 이의 제조방법 및 이의 용도 |
| US5816891A (en) * | 1995-06-06 | 1998-10-06 | Advanced Micro Devices, Inc. | Performing chemical mechanical polishing of oxides and metals using sequential removal on multiple polish platens to increase equipment throughput |
| US5645736A (en) * | 1995-12-29 | 1997-07-08 | Symbios Logic Inc. | Method for polishing a wafer |
| EP0786504A3 (en) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
| US5769689A (en) * | 1996-02-28 | 1998-06-23 | Rodel, Inc. | Compositions and methods for polishing silica, silicates, and silicon nitride |
| US5993686A (en) * | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
| US5866031A (en) * | 1996-06-19 | 1999-02-02 | Sematech, Inc. | Slurry formulation for chemical mechanical polishing of metals |
| US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
| US5916855A (en) * | 1997-03-26 | 1999-06-29 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films |
| US5934980A (en) * | 1997-06-09 | 1999-08-10 | Micron Technology, Inc. | Method of chemical mechanical polishing |
| US6028006A (en) * | 1997-08-01 | 2000-02-22 | Texas Instruments Incorporated | Method for maintaining the buffer capacity of siliceous chemical-mechanical silicon polishing slurries |
-
1997
- 1997-11-06 US US08/965,218 patent/US6190237B1/en not_active Expired - Fee Related
-
1998
- 1998-10-14 KR KR1019980042992A patent/KR100307342B1/ko not_active IP Right Cessation
- 1998-11-05 CN CNB981238483A patent/CN1152102C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990044857A (ko) | 1999-06-25 |
| KR100307342B1 (ko) | 2001-10-19 |
| CN1218077A (zh) | 1999-06-02 |
| US6190237B1 (en) | 2001-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1152102C (zh) | pH值缓冲的浆液及其在抛光中的应用 | |
| CN1157450C (zh) | 用于铜基材的化学机械抛光浆料 | |
| KR101245276B1 (ko) | 산화세륨 연마재의 재생 방법 | |
| CN1131125C (zh) | 用于金属cmp的组合物和浆料 | |
| CN1966594B (zh) | 包括钨侵蚀抑制剂的抛光组合物 | |
| CN1042550C (zh) | 活性抛光组合物及其制备方法 | |
| EP1369906A4 (en) | POLISHING PASTE AND METHOD OF POLISHING A SUBSTRATE | |
| CA2508332C (en) | Composition and method for copper chemical mechanical planarization | |
| WO2001004226A2 (en) | Cmp composition containing silane modified abrasive particles | |
| CN1809620A (zh) | 用于cmp的涂覆金属氧化物颗粒 | |
| CN1315989A (zh) | 化学机械抛光浆料和其使用方法 | |
| CN1696235A (zh) | 阻挡层抛光溶液 | |
| CN1735671A (zh) | 用于铜膜平面化的钝化化学机械抛光组合物 | |
| KR101022982B1 (ko) | 폴리싱 슬러리 및 그 사용 방법 | |
| US6294105B1 (en) | Chemical mechanical polishing slurry and method for polishing metal/oxide layers | |
| JP2002028850A (ja) | 研磨用組成物及び方法 | |
| EP1136534A1 (en) | Hybrid polishing slurry | |
| JPWO2007119775A1 (ja) | ガラス基板の加工方法及びガラス基板加工用リンス剤組成物 | |
| CN1211448C (zh) | 在二氧化硅化学机械抛光过程中减少/消除划痕和缺陷的组合物和方法 | |
| US5855633A (en) | Lapping slurry | |
| CN101675138B (zh) | 含有可溶性金属过氧酸盐络合物的化学机械抛光组合物及其使用方法 | |
| JPH06330025A (ja) | ガラス研磨用研磨材 | |
| CN1680508A (zh) | 半导体芯片化学机械研磨剂及其配制方法 | |
| CN113122141A (zh) | 一种化学机械抛光液 | |
| CN100509980C (zh) | 用于铜化学机械平整化加工的组合物及方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040602 Termination date: 20101105 |